CN115974547A - SrTiO for grain boundary layer capacitor 3 Method for preparing base ceramic substrate - Google Patents
SrTiO for grain boundary layer capacitor 3 Method for preparing base ceramic substrate Download PDFInfo
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- CN115974547A CN115974547A CN202310064867.2A CN202310064867A CN115974547A CN 115974547 A CN115974547 A CN 115974547A CN 202310064867 A CN202310064867 A CN 202310064867A CN 115974547 A CN115974547 A CN 115974547A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 95
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 229910002367 SrTiO Inorganic materials 0.000 title claims abstract description 28
- 239000003990 capacitor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 12
- 238000004321 preservation Methods 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000011812 mixed powder Substances 0.000 claims description 8
- 238000001694 spray drying Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000011268 mixed slurry Substances 0.000 claims description 4
- 239000004570 mortar (masonry) Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000001125 extrusion Methods 0.000 claims description 2
- 238000010345 tape casting Methods 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000011230 binding agent Substances 0.000 abstract description 2
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 abstract 1
- 238000012797 qualification Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000013589 supplement Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 13
- 238000009413 insulation Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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Abstract
The invention relates to the technical field of ceramic materials, and particularly discloses SrTiO for a grain boundary layer capacitor 3 Method for preparing base ceramic substrate with SrCO 3 、TiO 2 、Ta 2 O 5 And CaCO 3 Is used as a main raw material and is calcined to obtain SrTiO 3 Preparing a ceramic blank by dry pressing and forming, carrying out binder removal treatment, sintering in an air atmosphere by a high-temperature box type electric furnace to obtain a ceramic block, cutting the ceramic block into ceramic substrates with required dimensions by a multi-wire cutting machine, sintering the ceramic substrates in a nitrogen or reducing atmosphere to obtain a semiconductive ceramic substrate, coating an oxidant coating on the semiconductive ceramic substrate, and forming the semiconductive ceramic substrate by sinteringThen heating the ceramic substrate in air or oxygen at a certain temperature to supplement oxygen to obtain SrTiO 3 The ceramic substrate with the basal crystal boundary layer improves the consistency of the dielectric performance of the ceramic substrate and obviously improves the qualification rate of the ceramic substrate product.
Description
Technical Field
The invention relates to the technical field of ceramic materials, in particular to SrTiO for a grain boundary layer capacitor 3 A method for manufacturing a base ceramic substrate.
Background
With the development of miniaturization and high frequency of electronic devices, companies such as AVX, ATC, DLI, TECDIA, and compax have invested huge capital for the development of grain boundary layer capacitors. Compared with the traditional MLCC and SLCC, the grain boundary layer capacitor has large capacity, small volume, low dielectric loss and small parasitic effect, is widely applied to microwave communication lines, oscillating circuits, timing or delay circuits, coupling circuits such as amplifiers, oscillators, mixers and the like, can be developed and produced only in a few countries such as the United states, japan and the like, and has already formed monopoly on the market.
BaTiO successfully developed by S.WaKu et al, DLI and MDI company in 1967 3 Base ceramic substrate, srTiO 1972 3 The substrate ceramic substrate material is published and retains BaTiO 3 The high dielectric constant of the base ceramic material is beneficial to the miniaturization of elements and overcomes the defects of BaTiO 3 The base ceramic material has the defects of high dielectric loss and low dispersion frequency, the electrical property of the base ceramic material is rapidly and generally accepted, and the mass production is realized.
SrTiO 3 The base ceramic substrate is used as a core functional material of a grain boundary layer capacitor, and is the bottleneck of the development of large capacity and miniaturization of a capacitor product. At present, the two-step method is mainly adopted by the manufacturers of the grain boundary layer capacitors at home and abroad, and SrTiO is used as the first step 3 Sintering the ceramic blank in nitrogen or reducing atmosphere, and sintering the SrTiO 3 Heating and oxygenating the ceramic in air or oxygen at a certain temperature to finally prepare SrTiO 3 A base ceramic substrate. The main disadvantages include: (1) Different areas of the same substrateThe fluctuation range of the electric constant is large (+/-15% to +/-20%); (2) The fluctuation range of the dielectric constant is large (+/-20% to +/-30%) among different substrates or different semi-conductive sintering batches; (3) Due to the high semi-conducting sintering temperature (about 1400 ℃), the thin thickness of the ceramic green body (generally less than 0.3 mm) and the like, the substrate is easy to warp, so that the yield is low (less than or equal to 50%); (4) It is impossible to produce an ultrathin (the thickness is less than or equal to 127 mu m) large-size (more than or equal to 50.8mm multiplied by 50.8 mm) ceramic substrate.
Disclosure of Invention
To solve the problems mentioned in the background art, the present invention is directed to providing SrTiO for an interlayer seed crystal capacitor 3 The preparation method of the base ceramic substrate aims to solve the problems of poor temperature uniformity and low yield under high-temperature atmosphere sintering.
In order to achieve the above object, the technical solution of the present invention is:
SrTiO for grain boundary layer capacitor 3 The preparation method of the base ceramic substrate comprises the following steps:
(1) Mixing SrCO 3 、TiO 2 、Ta 2 O 5 And CaCO 3 Mixing the powders to obtain a mixed powder, wherein SrCO 3 57.4-61.9 wt% of TiO 2 31.2 to 33.5 weight percent of Ta 2 O 5 0.4 to 1.7 weight percent of CaCO 3 The mass fraction is 4.2wt% -9.7 wt%;
(2) Sanding and spray drying the mixed powder obtained in the step (1), placing the mixture in a high-temperature box type electric furnace, and calcining the mixture for 4 to 5 hours at 1200 +/-10 ℃ to obtain SrTiO 3 The base ceramic powder is made into a ceramic green body through the working procedures of sanding, gluing, spray drying and dry pressing;
(3) Placing the ceramic blank obtained in the step (2) in a glue discharging furnace for glue discharging treatment, wherein the glue discharging parameters are 150 ℃/120min → 260 ℃/480min → 400 ℃/360min → 600 ℃/300min → 600 ℃/240min → 950 ℃/300min → furnace cooling;
(4) Sintering the ceramic blank after the binder removal in the step (3) in a high-temperature box-type electric furnace under the air atmosphere condition, wherein the sintering temperature is 1400-1450 ℃, and the heat preservation time is 2-4 h, so as to prepare a ceramic block;
(5) Cutting the ceramic block obtained in the step (4) to obtain a ceramic substrate;
(6) Sintering the ceramic substrate obtained in the step (5) in an atmosphere sintering furnace at 1360 +/-20 ℃ under the reducing atmosphere condition, wherein the heat preservation time is 30-240 min, the reducing gas is nitrogen and hydrogen, and the proportion of the nitrogen to the hydrogen is 85-100;
(7) Uniformly coating the mixed slurry of bismuth oxide and copper oxide on the surface of the ceramic substrate sintered in a reducing atmosphere by adopting a spin coating mode, and carrying out heat treatment in a high-temperature box type furnace under the air atmosphere condition, wherein the temperature is 1100 +/-30 ℃, and the heat preservation time is 150-300 min, so as to prepare SrTiO 3 A basal crystal boundary layer ceramic substrate.
Furthermore, in the step (2), a ceramic blank is prepared by tape casting.
Further, in the step (2), a ceramic blank is manufactured by adopting extrusion molding.
Furthermore, in the step (5), the ceramic block is cut by using multi-wire cutting equipment, and the cutting medium is mortar.
The invention has the beneficial effects that: with conventional SrTiO 3 Compared with the preparation method of the basal crystal boundary layer ceramic substrate, the technical innovation of the invention is mainly embodied in the following aspects: firstly, sintering a ceramic blank in an air atmosphere to enable SrTiO 3 The crystal grains grow fully, and then the semiconductor ceramic substrate is obtained by sintering the crystal grains in the reducing atmosphere, so that the problem of poor temperature uniformity under high-temperature atmosphere sintering is solved, the abnormal growth of the crystal grains is effectively inhibited, and the consistency of dielectric properties is greatly improved; secondly, after the sintered ceramic block is cut into the ceramic substrate with the specified size requirement, the ceramic substrate is placed in a reducing atmosphere for sintering, so that the technical bottleneck of sintering and warping of the large-size ultrathin substrate is solved, the reaction of the ceramic blank and a sintering bearing plate at high temperature is avoided, and the qualified rate of ceramic substrate products is remarkably improved.
Drawings
FIG. 1 is a graph showing the variation of dielectric constant and dielectric loss with temperature of a ceramic substrate according to a first embodiment of the present invention;
FIG. 2 is a schematic view of a microstructure of a grain boundary layer ceramic substrate prepared by a conventional method;
fig. 3 is a schematic microstructure diagram of a grain boundary layer ceramic substrate according to a first embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments disclosed herein are intended to be within the scope of the present invention.
The first embodiment is as follows:
SrTiO for grain boundary layer capacitor 3 The preparation method of the base ceramic substrate comprises the following steps:
(1) 14760 grams of SrCO 3 7974 g TiO 2 440 g of Ta 2 O 5 And 2500 g CaCO 3 Mixing the powder to obtain mixed powder;
(2) Sanding and spray drying the mixed powder obtained in the step (1), placing the powder in a high-temperature box type electric furnace, and calcining the powder at 1200 ℃ for 5 hours to obtain SrTiO 3 The ceramic powder is subjected to sanding, gluing, spray drying and dry pressing to prepare a ceramic blank of 60mm (L) multiplied by 60mm (W) multiplied by 25mm (T);
(3) Placing the ceramic blank obtained in the step (2) in a glue discharging furnace for glue discharging treatment, wherein the glue discharging parameters are 150 ℃/120min → 260 ℃/480min → 400 ℃/360min → 600 ℃/300min → 600 ℃/240min → 950 ℃/300min → furnace cooling;
(4) Sintering the ceramic blank after the glue is removed in the step (3) in a high-temperature box type electric furnace under the air atmosphere condition, wherein the sintering temperature is 1400 ℃, and the heat preservation time is 3 hours, so as to prepare a ceramic block body, and the external dimension of the ceramic block body is (50.8 +/-0.3) mmX (20 +/-1) mm;
(5) Selecting mortar as a cutting medium, and cutting the ceramic block obtained in the step (4) into ceramic substrates with the thickness of (0.110 +/-0.010) mm and the length and width of (50.8 +/-0.3) mmX (50.8 +/-0.3) mm by utilizing multi-wire cutting equipment;
(6) Sintering the ceramic substrate obtained in the step (5) in an atmosphere sintering furnace at 1360 ℃ under the condition of reducing atmosphere, wherein the heat preservation time is 4h, the reducing gas is nitrogen and hydrogen, and the proportion of the nitrogen to the hydrogen is 90;
(7) Uniformly coating the mixed slurry of bismuth oxide and copper oxide on the surface of the ceramic substrate sintered in a reducing atmosphere by adopting a spin coating mode, carrying out heat treatment in a high-temperature box type furnace under the air atmosphere condition, wherein the temperature is 1100 ℃, and the heat preservation time is 4h, thus preparing 2-inch large-size ultrathin SrTiO with the thickness of 0.110mm 3 A basal crystal boundary layer ceramic substrate.
Randomly extracting 10 prepared crystal boundary layer ceramic substrate products, preparing a crystal boundary layer capacitor sample with the size of 1mm multiplied by 1mm through sputtering and cutting procedures, wherein the capacitance test result is shown in a table 1, the insulation resistance test result is shown in a table 2, and the detection is carried out by adopting a 9-point method, wherein the dielectric constant and the dielectric loss test conditions are as follows: 25 +/-2 ℃, the humidity is 55-65%, the test frequency is 1KHz +/-50 Hz, and the test bias is 1.0VAC RMC; the insulation resistance test voltage is 50V +/-1V, and the measurement time is 30s; the temperature characteristic curve of the dielectric constant and the dielectric loss is shown in figure 1, and accords with the X7S standard, and the testing temperature range is-55 ℃ to 125 ℃.
TABLE 1 (preparation of sample capacitance test results)
TABLE 2 (insulation resistance test results of samples prepared)
As can be seen from the results of the tests in Table 1 in combination with the plate capacitor theory, the dielectric constant K of the sample prepared is 30000, and the fluctuation range of the dielectric constant is increased from + -20% to + -15% compared with the conventional method for preparing the grain boundary layer ceramic substrate (see FIG. 2), mainly because the sample is emptyThe high-temperature sintering is carried out under the condition of gas atmosphere to promote the growth of crystal grains, so that the uniformity of the temperature in the sintering process can be effectively ensured, the abnormal influence of atmosphere fluctuation on the growth of the crystal grains is solved, the abnormal growth of the crystal grains is avoided, the uniformity of the size of the crystal grains is improved, the problem of large dielectric constant fluctuation of the ceramic material of a grain boundary layer is further improved, and the test result of the insulation resistance in the table 2 shows that the core index of the insulation resistance reaches 10 7 Omega magnitude order, even distribution and good batch consistency, meets the use requirement and is beneficial to replacing imported products.
Example two:
(1) 14760 grams SrCO 3 7974 g TiO 2 440 g of Ta 2 O 5 And 2500 g CaCO 3 Mixing the powder to obtain mixed powder;
(2) Sanding and spray drying the mixed powder obtained in the step (1), placing the powder in a high-temperature box type electric furnace, and calcining the powder at 1200 ℃ for 5 hours to obtain SrTiO 3 The ceramic powder is subjected to sanding, gluing, spray drying and dry pressing to prepare a ceramic blank of 60mm (L) multiplied by 60mm (W) multiplied by 25mm (T);
(3) Placing the ceramic blank obtained in the step (2) in a glue discharging furnace for glue discharging treatment, wherein the glue discharging parameters are 150 ℃/120min → 260 ℃/480min → 400 ℃/360min → 600 ℃/300min → 600 ℃/240min → 950 ℃/300min → furnace cooling;
(4) Sintering the ceramic blank after the glue removal in the step (3) in a high-temperature box type electric furnace under the air atmosphere condition, wherein the sintering temperature is 1450 ℃, and the heat preservation time is 3 hours, so as to prepare a ceramic block body, and the external dimension of the ceramic block body is (50.8 +/-0.3) mmX (20 +/-1) mm;
(5) Selecting mortar as a cutting medium, and cutting the ceramic block obtained in the step (4) into ceramic substrates with the thickness of (0.110 +/-0.010) mm and the length and width of (50.8 +/-0.3) mmX (50.8 +/-0.3) mm by utilizing multi-wire cutting equipment;
(6) Sintering the ceramic substrate obtained in the step (5) in a 1380 ℃ atmosphere sintering furnace under a reducing atmosphere condition, wherein the heat preservation time is 4h, the reducing gas is nitrogen and hydrogen, and the ratio of the nitrogen to the hydrogen is 85;
(7) Uniformly coating the mixed slurry of bismuth oxide and copper oxide on the surface of a ceramic substrate sintered in a reducing atmosphere by adopting a spin coating mode, carrying out heat treatment in a high-temperature box type furnace under the air atmosphere condition, wherein the temperature is 1080 ℃, the heat preservation time is 4 hours, and preparing 2-inch large-size ultrathin SrTiO with the thickness of 0.110mm 3 A basal crystal boundary layer ceramic substrate.
Randomly drawing 3 crystal boundary layer ceramic substrates, preparing 1mm multiplied by 1mm size detection samples through sputtering and cutting procedures, wherein the capacitance test result is shown in table 3, and the insulation resistance reaches 10 5 Of the order of Ω.
TABLE 3
As can be seen from the capacitance test results in Table 3, the dielectric constant K of the prepared grain boundary layer ceramic substrate reaches 50000, the fluctuation range is about +/-18%, and good consistency is still shown, which indicates that the dielectric constant can be adjusted by increasing the sintering temperature and increasing the hydrogen content, and then the large-size ultrathin SrTiO can be prepared 3 A grain boundary layer ceramic substrate having a very high dielectric constant (K of 30000 to 50000).
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (4)
1. SrTiO for grain boundary layer capacitor 3 The preparation method of the base ceramic substrate is characterized by comprising the following steps:
(1) Mixing SrCO 3 、TiO 2 、Ta 2 O 5 And CaCO 3 Mixing the powders to obtain a mixed powder, wherein SrCO 3 57.4-61.9 wt% of TiO 2 31.2 to 33.5 weight percent of Ta 2 O 5 0.4 to 1.7 weight percent of CaCO 3 The mass fraction is 4.2wt% -9.7 wt%；
(2) Sanding and spray drying the mixed powder obtained in the step (1), placing the powder in a high-temperature box type electric furnace, and calcining the powder at 1200 +/-10 ℃ for 4-5 hours to obtain SrTiO 3 The base ceramic powder is made into a ceramic green body through the working procedures of sanding, gluing, spray drying and dry pressing;
(3) Placing the ceramic blank obtained in the step (2) in a glue discharging furnace for glue discharging treatment, wherein the glue discharging parameters are 150 ℃/120min → 260 ℃/480min → 400 ℃/360min → 600 ℃/300min → 600 ℃/240min → 950 ℃/300min → furnace cooling;
(4) Sintering the ceramic blank after the glue removal in the step (3) in a high-temperature box type electric furnace under the air atmosphere condition, wherein the sintering temperature is 1400-1450 ℃, and the heat preservation time is 2-4 h, so as to prepare a ceramic block;
(5) Cutting the ceramic block obtained in the step (4) to obtain a ceramic substrate;
(6) Sintering the ceramic substrate obtained in the step (5) in an atmosphere sintering furnace at 1360 +/-20 ℃ under the reducing atmosphere condition, wherein the heat preservation time is 30-240 min, the reducing gas is nitrogen and hydrogen, and the proportion of the nitrogen to the hydrogen is 85-100;
(7) Uniformly coating the mixed slurry of bismuth oxide and copper oxide on the surface of the ceramic substrate sintered in a reducing atmosphere by adopting a spin coating mode, and carrying out heat treatment in a high-temperature box type furnace under the air atmosphere condition, wherein the temperature is 1100 +/-30 ℃, and the heat preservation time is 150-300 min, so as to prepare SrTiO 3 A basal crystal boundary layer ceramic substrate.
2. The SrTiO for the grain boundary layer capacitor of claim 1 3 The preparation method of the base ceramic substrate is characterized in that the ceramic blank is prepared by tape casting in the step (2).
3. The SrTiO for the grain boundary layer capacitor of claim 1 3 The preparation method of the base ceramic substrate is characterized in that the ceramic blank is prepared by adopting extrusion molding in the step (2).
4. The SrTiO for the grain boundary layer capacitor of claim 1 3 The preparation method of the base ceramic substrate is characterized in that in the step (5), the ceramic block is cut by using multi-line cutting equipment, and the cutting medium is mortar.
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- 2023-02-01 CN CN202310064867.2A patent/CN115974547B/en active Active
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| Title |
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