CN115974382A - Method for improving surface defects of photomask quartz glass substrate - Google Patents
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- CN115974382A CN115974382A CN202211672273.1A CN202211672273A CN115974382A CN 115974382 A CN115974382 A CN 115974382A CN 202211672273 A CN202211672273 A CN 202211672273A CN 115974382 A CN115974382 A CN 115974382A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 230000007547 defect Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005498 polishing Methods 0.000 claims abstract description 57
- 238000002425 crystallisation Methods 0.000 claims abstract description 16
- 230000008025 crystallization Effects 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000000227 grinding Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 238000011282 treatment Methods 0.000 claims description 8
- 238000013532 laser treatment Methods 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 238000004031 devitrification Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000006061 abrasive grain Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 9
- 238000004064 recycling Methods 0.000 abstract description 9
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- 239000012071 phase Substances 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Abstract
The invention relates to the technical field of quartz surface processing, in particular to a method for improving surface defects of a photomask quartz glass substrate, which comprises the steps of annealing a surface defect area of the photomask quartz glass substrate by utilizing laser to melt a thin layer on the surface of the photomask quartz glass substrate, enabling the surface of the quartz glass substrate to be flattened by flowing molten quartz glass, forming a phase structure layer on the surface of the photomask quartz glass substrate by controlling the surface temperature of the photomask quartz glass substrate to crystallization temperature, enabling the defects on the surface of the quartz glass substrate to be more flattened, polishing the surface of the photomask quartz glass substrate if the flatness requirement is not met, and achieving the required flatness requirement only by polishing and grinding the thin layer, thereby increasing the times of regeneration and reutilization, and improving the reutilization rate and the recycling value of the quartz glass substrate.
Description
Technical Field
The invention relates to the technical field of quartz surface processing, in particular to a method for improving surface defects of a photomask quartz glass substrate.
Background
A photo mask (PhotoMask) is a structure for making various functional patterns on a film, plastic or glass base material and precisely positioning them for selective exposure of a photoresist coating, and is a pattern master used in a photolithography process in microelectronics manufacturing, and thus has extremely high requirements on flatness and thickness of a quartz glass substrate.
In the process of semiconductor industrial production, the used photomask or blank mask generally has recycling value, the bottom plate of the recycled photomask is a quartz substrate, and a metal film layer and a photoresist layer are usually attached to the quartz substrate. At this time, in order to obtain a clean quartz substrate, the photoresist and the metal film must be removed. In this case, for selectively removing the photoresist and the metal film, a method of immersing the photoresist and the metal film in a stripping solution (Stripper solution) and an etching solution (Etchant) is generally used. For example, when the metal film is a chromium or chromium oxide film, the removal of the chromium or chromium oxide metal film is performed by a wet etching process, and a quartz substrate can be recovered from a waste reticle and mask substrate using a chromium etching solution (Cr Etchant). Similarly, the quartz substrate production also needs to deal with the surface defects, and the similar problems as described above are also faced.
In such a case, various defects such as etching pits and scratches are present on the surface of the quartz substrate, and the surface roughness and flatness are not satisfactory for use, and further processing is required. The common treatment mode is CMP, but CMP usually increases the roughness and the flatness of the quartz glass substrate and thins the quartz glass substrate more, which leads to excessive thickness loss of the quartz glass substrate in the polishing process, which is equivalent to increasing the thickness requirement of the recovery plate, and reducing the reusability times of the photomask quartz glass substrate.
Disclosure of Invention
The invention provides a method for improving surface defects of a photomask quartz glass substrate, which aims to solve the problem of overlarge thickness loss in the surface defect treatment of the photomask quartz glass substrate in the prior art.
The invention provides a method for improving surface defects of a photomask quartz glass substrate, which comprises the following steps:
carrying out laser treatment on the defect area on the surface of the photomask quartz glass substrate so as to melt the surface of the corresponding area of the photomask quartz glass substrate;
and annealing the surface-fused photomask quartz glass substrate, and in the annealing treatment, controlling the surface temperature of the photomask quartz glass substrate to a crystallization temperature so as to reconstruct the surface of the photomask quartz glass substrate to form a phase structure layer, thereby obtaining the quartz glass substrate with the smoothed surface defects.
According to an embodiment of the present invention, further comprising: and after finishing the annealing treatment, continuously polishing the surface of the photomask quartz glass substrate to improve the surface flatness or roughness.
According to one embodiment of the present invention, the step of laser-treating the surface of the photomask quartz glass substrate to melt the surface of the photomask quartz glass substrate comprises:
has a power density of
The laser of magnitude uniformly radiates the defect part on the front surface of the quartz glass substrate, and the instantaneous high temperature is formed on the surface of the photomask quartz glass substrate to be higher than 1730 ℃, so that the thin layer on the surface of the photomask quartz glass substrate is fused.
According to one embodiment of the invention, the crystallization temperature is 1100-1200 ℃.
According to an embodiment of the present invention, the step of performing polishing treatment on the surface of the photomask quartz glass substrate includes:
and grinding the phase structure layer by CMP chemical mechanical polishing.
According to one embodiment of the invention, the CMP chemical mechanical polishing step comprises:
fixing a photomask quartz glass substrate below a polishing head, placing a polishing pad on a polishing disc, adding polishing liquid on the polishing pad to enable the polishing liquid to form a slurry film between the surface of the photomask quartz glass substrate and the polishing pad in the polishing process, reacting the polishing liquid with residues on the surface of the photomask quartz glass substrate and softening the phase structure layer, and polishing and grinding the phase structure layer through the polishing liquid.
According to one embodiment of the invention, the polishing solution at least contains nano-silica abrasive particles.
The method for improving the surface defect of the photomask quartz glass substrate provided by the invention has the advantages that the surface thin layer of the photomask quartz glass substrate is fused by carrying out laser treatment on the surface defect area of the photomask quartz glass substrate, the fused quartz has certain fluidity, so that the defect on the quartz glass substrate is leveled (usually, the height difference of the defect such as a dent or a scratch is obviously reduced), the surface of the quartz glass substrate is leveled, then, the surface temperature of the photomask quartz glass substrate is controlled to be the crystallization temperature, a phase structure layer is formed on the surface of the photomask quartz glass substrate, the internal crystallization in the crystallization process is controlled to be rearranged, the defect on the surface of the phase structure layer quartz glass substrate can be leveled, and if the measured flatness or roughness of the surface of the quartz glass substrate meets the use requirement, the procedure for improving the surface defect of the quartz glass substrate is completed, and the high-flatness quartz glass substrate is obtained.
Further, if the flatness or roughness of the surface of the quartz glass substrate is measured and does not meet the use requirements, the phase structure layer of the surface of the photomask quartz glass substrate can be polished, but the required flatness requirement can be met only by polishing and grinding a thinner layer, so that the recycling frequency can be increased, and the recycling rate and the recycling value of the quartz glass substrate are improved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a flowchart of the steps of a method for improving surface defects of a quartz glass substrate for a photomask according to an embodiment of the present invention;
FIG. 2 is a process flow diagram of a method for improving surface defects of a quartz glass substrate for a photomask according to an embodiment of the present invention;
FIG. 3 is a quartz glass substrate for a photomask having a surface with partial defects according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a quartz glass substrate after laser melting and during annealing and crystallization according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a quartz glass substrate after a laser melting and annealing devitrification step is provided in accordance with an embodiment of the present invention.
Reference numerals:
1. a quartz glass substrate; 2. a phase structure layer; 3. and (4) laser.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the embodiments of the present invention, it should be noted that the terms "central", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection, unless explicitly stated or limited otherwise; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. Specific meanings of the above terms in the embodiments of the present invention can be understood in specific cases by those of ordinary skill in the art.
In embodiments of the invention, unless expressly stated or limited otherwise, a first feature may be "on" or "under" a second feature such that the first and second features are in direct contact, or the first and second features are in indirect contact via an intermediary. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Embodiments of the present invention are described below in conjunction with fig. 1-3.
As shown in fig. 1 and 2, an embodiment of the present invention provides a method for improving surface defects of a quartz glass substrate for a photomask, the method comprising the steps of:
step 1: and removing the photoresist on the surface of the quartz glass substrate of the photomask.
In step 1, the conventional wet photoresist removing step may be used to remove the residual photoresist on the surface of the quartz glass substrate of the photomask.
The wet photoresist removing step specifically comprises the following steps:
after the etching or ion implantation of the photomask quartz glass substrate is completed, the quartz glass substrate with the photoresist on the surface is placed in a container with cleaning liquid, so that the photoresist is dissolved or decomposed, and the residual photoresist is taken out.
In the wet photoresist removing step, the cleaning solution can be organic or inorganic cleaning solution, the commonly used organic cleaning solution is acetone and aromatic organic solvent, and the commonly used inorganic cleaning solution is sulfuric acid and hydrogen peroxide.
Of course, the photoresist stripping step is not limited to wet photoresist stripping, and a dry photoresist stripping step may be used.
The dry method photoresist removing step comprises the following steps:
the photomask quartz glass substrate with the photoresist on the surface is placed between electrodes of a plasma reaction chamber, oxygen is introduced, the air pressure of the reaction chamber is controlled, and the photoresist is removed through the chemical reaction between oxygen ions and the photoresist.
The photoresist removing method is plasma photoresist removing, wherein a quartz glass substrate with photoresist on the surface is inserted into a quartz boat and is parallel to the direction of air flow, the quartz glass substrate is pushed into a reaction chamber between two electrodes, the reaction chamber is vacuumized to 1.3Pa, a proper amount of oxygen is introduced, and the reaction is performed in a reverse mannerThe pressure of the reaction chamber is 1.3-13Pa, high frequency power is added, light purple glow discharge is generated between the electrodes, and the photoresist generates gaseous CO and CO through chemical reaction in oxygen plasma 2 And H 2 And O, gas generated after the reaction can be pumped out by a vacuum system, so that the residual photoresist on the surface of the quartz glass substrate of the photomask is removed.
As shown in fig. 3, the surface of the quartz glass substrate after the photoresist is removed by the wet or dry process has partial or total unevenness.
In a preferred embodiment, the quartz glass substrate having a partially or completely uneven surface as shown in fig. 3 may also be produced in a normal production stage of the quartz glass substrate.
Step 2: laser melting, namely performing laser processing on a defect area on the surface of the photomask quartz glass substrate through laser to melt the surface of the corresponding area of the photomask quartz glass substrate, so that the quartz glass with the melted surface has certain fluidity, thereby filling the defect on the quartz glass substrate and flattening the surface of the quartz glass substrate;
and step 3: and annealing and crystallizing, and annealing the photomask quartz glass substrate with the surface fused, and controlling the surface temperature of the photomask quartz glass substrate to a crystallization temperature so as to reconstruct a defect area on the surface of the photomask quartz glass substrate to form a phase structure layer, thereby further flattening the surface of the photomask quartz glass substrate.
The specific operations of laser melting and annealing crystallization are as follows:
drying the removed quartz glass substrate, placing the dried quartz glass substrate in a reaction chamber, and exhausting air in the reaction chamber with power density as
The front side of the quartz glass substrate is uniformly radiated by the magnitude laser, and instant high temperature is formed in a defect area on the surface of the photomask quartz glass substrate to heat the defect area to be higher than about 1730 ℃, so that a thin layer on the surface of the quartz glass substrate is fused; then the temperature is kept near the crystallization temperature of the quartz glass, and the formed phase can be solidified againAnd (5) a structural layer.
In one embodiment, the laser melts the surface of the quartz glass substrate for 100ns.
In one embodiment, in the step of controlling the crystallization temperature of the silica glass, the crystallization temperature of the thin layer on the surface of the silica glass may be controlled to be about 1100 to 1200 ℃ so as to form the phase structure layer. The thickness of the thin layer on the surface of the quartz glass substrate is about 5-10 μm.
As shown in fig. 4, the power of the laser 3 is controlled, the laser 3 irradiates the defect area on the front surface of the quartz glass substrate 1, the defect area on the surface of the quartz glass substrate 1 forms an instant high temperature and melts a surface thin layer, and then the surface of the quartz glass substrate 1 is controlled at a crystallization temperature; laser annealing can irradiate high-energy-density laser in a small area of a quartz glass substrate 1 sample within an ultrashort time (tens of nanoseconds to hundreds of nanoseconds), the front surface of the quartz glass substrate 1 is melted, and then the temperature is kept near the crystallization temperature (1100-1200 ℃) of quartz glass, so that a solid phase structure can be solidified again to form a phase structure layer 2. The phase structure layer 2 makes the surface of the quartz glass substrate 1 further flat.
As shown in fig. 5, after laser melting and annealing for devitrification to form the phase structure layer 2, unevenness on the surface of the quartz glass substrate is significantly improved.
If the measured surface flatness or roughness of the quartz glass substrate meets the use requirement, finishing the procedure of improving the surface defects of the quartz glass substrate to obtain the high-flatness quartz glass substrate; if the flatness or roughness of the surface of the quartz glass substrate is measured to satisfy the operating requirements, step 4 is performed.
And 4, step 4: when the surface of the photomask quartz glass substrate is polished, the defects on the surface of the quartz glass substrate tend to be further smooth due to laser melting and a phase structure layer, so that the required flatness can be achieved by only polishing a thin layer.
In this embodiment, CMP chemical mechanical polishing is used as a polishing method.
CMP chemical mechanical polishing belongs to a polishing technology combining chemical action and mechanical action, firstly, the surface material of a workpiece and an oxidant, a catalyst and the like in polishing solution generate chemical reaction to generate a soft layer which is relatively easy to remove, then the soft layer is removed under the mechanical action of an abrasive in the polishing solution and a polishing pad to expose the surface of the workpiece again, and then the chemical reaction is carried out, thus finishing the polishing of the surface of the workpiece in the alternative process of the chemical action process and the mechanical action process.
The CMP chemical mechanical polishing comprises the following specific steps:
the quartz glass substrate is fixed below a polishing head, a polishing pad is placed on a polishing disc, a certain load is applied to the polishing pad by the polishing head in the polishing process, polishing liquid containing nano silicon dioxide abrasive particles is distributed on the polishing pad under the action of rotating centrifugation, and a slurry film is formed between the surface of a workpiece and the polishing pad.
The residual photoresist, the chromium film and the like on the surface of the quartz glass substrate react with the polishing solution to convert insoluble substances into soluble substances and soften high-hardness substances, and then the nano silicon dioxide abrasive particles in the polishing solution grind reactants and a phase structure layer on the surface of the quartz glass substrate through the micro-mechanical action, namely, the surface of the quartz glass substrate is flattened during the chemical-mechanical circulation interaction period.
Furthermore, when the laser melting is performed on the quartz glass substrate by using the laser, the quartz glass is melted due to high temperature, and the melted quartz glass has certain fluidity, so that the defects on the quartz glass substrate are filled, the surface of the quartz glass substrate is flattened, and then a phase structure layer appears in the defect area on the surface of the quartz glass by controlling time and temperature, and the phase structure layer can enable the defects on the surface of the quartz glass substrate to be more smooth.
The phase structure formed by laser melting and laser annealing in the prior art enables the defects on the surface of the quartz glass substrate to tend to be smooth, so that the required flatness can be achieved by only grinding a very thin layer during polishing, excessive polishing and grinding are avoided, the thickness of the quartz glass substrate is effectively ensured, the number of times of recycling the quartz glass substrate is increased, and the recycling rate of the quartz glass substrate is improved.
In a preferred embodiment, the defect region of the surface of the quartz glass substrate is the entire surface of the quartz glass substrate.
In a preferred embodiment, when the surface of the quartz glass substrate is laser-melted, the laser is not irradiated only on the defect region of the surface of the quartz glass substrate, but is irradiated on the entire surface of the quartz glass substrate, so that the entire surface of the quartz glass substrate is melted, the fluidity of the fused quartz is enhanced, and the defects can be further smoothed.
In summary, in the method for improving the surface defect of the photomask quartz glass substrate according to the embodiment of the present invention, after the photoresist remaining on the surface of the quartz glass substrate is removed, an instantaneous high temperature is formed on the surface of the photomask quartz glass substrate by using a laser technology to melt a thin layer on the surface of the photomask quartz glass substrate, the melted quartz glass flows to flatten the surface of the quartz glass substrate, annealing is performed to keep the temperature near the crystallization temperature of the quartz glass, so that a phase structure layer can be re-solidified to further flatten the surface defect by the phase structure layer; the surface of the quartz glass substrate tends to be flat through the two steps of operation, so that if the measured surface flatness or roughness meets the use requirement, the procedure of improving the surface defects of the quartz glass substrate is completed, and the high-flatness quartz glass substrate is obtained; if the requirement of surface flatness or roughness is not met, further polishing is carried out, but the required flatness can be achieved only by grinding off a very thin layer, excessive polishing and grinding are avoided, the thickness of the quartz glass substrate is effectively ensured, the number of times of recycling can be increased, and the recycling rate of the quartz glass substrate is improved.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that various changes in the form and details may be made therein without departing from the spirit and scope of the invention; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A method for improving surface defects of a quartz glass substrate of a photomask is characterized by comprising the following steps:
carrying out laser treatment on the defect area on the surface of the photomask quartz glass substrate so as to melt the surface of the corresponding area of the photomask quartz glass substrate;
and annealing the surface-fused photomask quartz glass substrate, and in the annealing treatment, controlling the surface temperature of the photomask quartz glass substrate to a crystallization temperature so as to reconstruct the surface of the photomask quartz glass substrate to form a phase structure layer, thereby obtaining the quartz glass substrate with the smoothed surface defects.
2. The method for improving surface defects of a photomask quartz glass substrate according to claim 1, further comprising: and after finishing the annealing treatment, continuously polishing the surface of the photomask quartz glass substrate to improve the surface flatness or roughness.
3. The method for improving surface defects of a photomask quartz glass substrate according to claim 1, wherein the step of performing laser treatment on the surface of the photomask quartz glass substrate to melt the surface of the photomask quartz glass substrate comprises:
has a power density of
The laser of magnitude evenly radiates the defect part on the front surface of the quartz glass substrate, and the instantaneous high temperature is formed on the surface of the photomask quartz glass substrate to be higher than 1730 ℃, so that the surface thin layer of the photomask quartz glass substrate is fused.
4. The method for improving surface defects of a quartz glass substrate for a photomask of claim 1, wherein the devitrification temperature is 1100 to 1200 ℃.
5. The method for improving surface defects of a photomask quartz glass substrate according to claim 2, wherein the step of subjecting the surface of the photomask quartz glass substrate to polishing treatment comprises:
and grinding the phase structure layer by CMP chemical mechanical polishing.
6. The method for improving surface defects of a photomask quartz glass substrate according to claim 5, wherein the CMP chemical mechanical polishing step comprises:
fixing a photomask quartz glass substrate below a polishing head, placing a polishing pad on a polishing disc, adding polishing liquid on the polishing pad to enable the polishing liquid to form a slurry film between the surface of the photomask quartz glass substrate and the polishing pad in the polishing process, reacting the polishing liquid with residues on the surface of the photomask quartz glass substrate and softening the phase structure layer, and polishing and grinding the phase structure layer through the polishing liquid.
7. The method for improving surface defects of a photomask quartz glass substrate according to claim 6, wherein the polishing solution contains at least nano-silica abrasive grains.
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| JP2008027992A (en) * | 2006-07-18 | 2008-02-07 | Lasertec Corp | Manufacturing method of substrate for euvl mask, and of euvl mask using the substrate |
| CN101946208A (en) * | 2008-02-19 | 2011-01-12 | 旭硝子株式会社 | EUVL optics and smoothing method thereof |
| JP2009283684A (en) * | 2008-05-22 | 2009-12-03 | Asahi Glass Co Ltd | Euvl optical member, and method of smoothing the same |
| CN102150218A (en) * | 2008-09-12 | 2011-08-10 | 旭硝子株式会社 | Method for smoothing optical member for EUVL and optical member for EUVL having smoothed optical surface |
| US20170283298A1 (en) * | 2016-03-24 | 2017-10-05 | Corning Incorporated | Laser sintering system and method for forming high purity, low roughness, low warp silica glass |
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