JPS5983950A - Preparation of glass substrate - Google Patents
Preparation of glass substrateInfo
- Publication number
- JPS5983950A JPS5983950A JP57193200A JP19320082A JPS5983950A JP S5983950 A JPS5983950 A JP S5983950A JP 57193200 A JP57193200 A JP 57193200A JP 19320082 A JP19320082 A JP 19320082A JP S5983950 A JPS5983950 A JP S5983950A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- glass substrate
- plate
- glass plate
- energy beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、集積回路の製造工程で被処理媒体、例えばシ
リコン・ウェハー上のフォト・レジスト膜を選択露光す
るために用いられるフォト・マスクの製造方法に関し、
特にフォト・マスク用ガラス基板の製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a photomask used for selectively exposing a photoresist film on a processing medium, such as a silicon wafer, in an integrated circuit manufacturing process.
In particular, the present invention relates to a method of manufacturing a glass substrate for a photomask.
フォト・マスクは、ガラス等の透明基板の一生平面上に
、写真乳剤おるいは金属膜を用いて＃４．積回路製造用
パターンを描いであるもので、通常、集積回路を製造す
るためには、このフォト・マスクが数種類−組として使
用される。フォト・マスク用として使用するガラス板社
、集積回路の要求精度が低い時には、ソーダー・ライム
・ガラスが用いられていた。最近、超ＬＳＩ等、高精度
集積回路が要求されるに及んで、フォト・マスク用ガラ
ス板もアルミナ・ホウケイ酸系の低＃張ガラスや、合成
石英ガラスが用いられる様になって来た。A photo mask is made using a photographic emulsion or a metal film on a flat surface of a transparent substrate such as glass. This photo mask depicts a pattern for manufacturing integrated circuits, and usually, several types of photo masks are used in sets to manufacture integrated circuits. Soda-lime glass was used by glass companies for photo masks and when the precision required for integrated circuits was low. Recently, with the demand for high-precision integrated circuits such as VLSIs, alumina-borosilicate-based low-strength glass and synthetic quartz glass have come to be used for photomask glass plates.
これは、膨張係数が小さいこと、機械的強度が大きいこ
と、光学的特性にすぐれていること等の理由によるもの
でおる。しかしながら、この合成石英ガラス板は、従来
のソーダー・ライム・ガラス板に比べ、価格が数倍から
数十倍高い欠点がある。This is due to its small expansion coefficient, high mechanical strength, and excellent optical properties. However, this synthetic quartz glass plate has the disadvantage that it is several to several tens of times more expensive than the conventional soda-lime glass plate.
従って、コスト・ダウンの為シリコン・ウェハー
（露光に使用して、キズが付いたシして使用不可能にな
った使用済７オト・マスクｆＫ：ｎ生する試みがなされ
ている。つまシ、使用済フォト・マスクのパターンを薬
液によって剥離し、キズが付いたガラス板を研磨剤を用
いて定盤による両面研磨、再生するのである。しかしな
がら使用済７．！ト・マスクの、ガラス板のキズは、５
０ミクロン程度の深さを有するものもおり、研磨剤を用
いた両面イ１）［磨を行う場合、最低５０ミクロンは、
ガラス板を研磨することになる。一般に、ガラス板の板
厚規格は％ある板厚に対して、１００ミクロン程度の公
差でろるから、」二連の再生研磨を行うとすると、２回
の再生研磨でガラス板は使用不可能になる。Therefore, silicon wafers are used to reduce costs.
(Attempts are being made to recover used photo masks that have become unusable due to scratches that were used for exposure.) The peeled and scratched glass plate is regenerated by polishing both sides with an abrasive using a surface plate.However, the scratches on the glass plate of the used mask are 5.
Some have a depth of about 0 microns, and when polishing both sides with an abrasive agent, the depth is at least 50 microns.
The glass plate will be polished. In general, the thickness standard for glass plates is within a tolerance of about 100 microns for a certain plate thickness, so if two rounds of recycled polishing are performed, the glass plate will become unusable after two rounds of recycled polishing. Become.
本発明の目的は、以上の様な不都合に鑑み、前記、使用
済フォト・マスクのガラス板の板厚を減することなく、
ガラス板を再生する方法を提供するものである。SUMMARY OF THE INVENTION In view of the above-mentioned disadvantages, an object of the present invention is to provide the above-mentioned used photo mask without reducing its thickness.
The present invention provides a method for recycling glass plates.
すなわち、本発明は透明ガラス基板表面に有する欠陥が
光学的に平坦になるまで、エネルギー・ビームを照射す
る事を％徴とするガラス基板興造方法に関するものでお
る。That is, the present invention relates to a method for manufacturing a glass substrate, which includes irradiating an energy beam until defects on the surface of a transparent glass substrate become optically flat.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
シリコン・ウェハーとのｆａ着露光等でキズが付き、使
用不可能となった使用済フォト・マスクのパターン像を
薬液によシ剥離し、次に、酸等の薬液で洗浄しガラス板
表面を清浄にする。続いて、ガラス板のキズを有する部
分に、そのキズが光学的に影響のない程度になるまで、
エネルギー・ビームを照射する。エネルギー・ビームと
しては、炭酸ガスレーザーが適当であるが、）ガラス板
に吸収され、ガラス板のキズの部分を溶融し、ガラス板
のキズを光学的に平坦にするものであれば、どんなエネ
ルギー・ビームでも良い。又、エネルギー・ビームの照
射条件はガラス質が蒸発せず、溶融する条件であれば良
い。炭酸ガス・レーザーで、ガラス板のキズを修正する
場合、ビーム径１０〜１００ミクロンで数〜ｐｉ、１０
０ワツトのエネルギーになる様な条件が良い。The pattern image of the used photomask, which has become unusable due to scratches due to FA exposure with silicon wafers, is peeled off using a chemical solution.Then, the surface of the glass plate is cleaned by cleaning with a chemical solution such as acid. Clean. Next, rub the scratched part of the glass plate until the scratch has no optical effect.
Fires an energy beam. A carbon dioxide laser is suitable as an energy beam, but any energy beam can be used as long as it is absorbed by the glass plate, melts the scratched part of the glass plate, and optically flattens the scratched part of the glass plate. - Beam is also fine. Further, the energy beam irradiation conditions may be such that the vitreous material is not evaporated but melted. When repairing scratches on a glass plate with a carbon dioxide laser, the beam diameter is 10 to 100 microns and the laser beam diameter is several to pi, 10
Conditions that result in 0 watts of energy are good.
ガラス板のキズの修正Ｌ１原理的には、熱溶融と考えら
れるから、部分的に発熱を伴う。従って、ガラス板の熱
分配によるひずみの発生を防ぐために、ガラス板を３０
０〜４００℃に加占しておくと良い。以上によυ、本発
明は完成される。Correction of scratches on glass plate L1 In principle, it is considered to be thermal melting, so heat is generated partially. Therefore, in order to prevent the generation of distortion due to heat distribution on the glass plate, the glass plate should be
It is preferable to keep the temperature between 0 and 400°C. With the above, the present invention is completed.
上述の様に、本発明によれば、簡単に、しかも、ガラス
板の板厚を損うことなく、ガラス板のキズの修正が出来
、ガラス板杜朽生されるのである。As described above, according to the present invention, scratches on the glass plate can be repaired easily and without damaging the thickness of the glass plate, and the glass plate can be restored.
しかも、本発明の方法によれば、何回でもガラス板の再
生が可能となり、コスト的効果はｎ（シ知れない。Moreover, according to the method of the present invention, it is possible to recycle the glass plate any number of times, and the cost effect is n (n).
Claims (1)
まで、エネルギー・ビームを照射する事を特徴とするガ
ラス基板の製造方法。A method for manufacturing a glass substrate, comprising irradiating an energy beam until defects on the surface of the transparent glass substrate become optically flat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193200A JPS5983950A (en) | 1982-11-02 | 1982-11-02 | Preparation of glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57193200A JPS5983950A (en) | 1982-11-02 | 1982-11-02 | Preparation of glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5983950A true JPS5983950A (en) | 1984-05-15 |
Family
ID=16303964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57193200A Pending JPS5983950A (en) | 1982-11-02 | 1982-11-02 | Preparation of glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5983950A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360118A (en) * | 1985-04-03 | 1988-03-16 | ハイネケン テクニカル サービシーズ ビー ブイ | Mechanical or chemical damage repairing process for recycling bottle surface and equipment therefor |
| JPH0616440A (en) * | 1992-06-30 | 1994-01-25 | Sharp Corp | Method for correcting defect on surface of transparent plate |
| US7473151B2 (en) | 2002-08-26 | 2009-01-06 | Hitachi, Ltd. | Method for manufacturing a substrate for a flat panel display including forming grooves in a surface |
| US7712333B2 (en) * | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
-
1982
- 1982-11-02 JP JP57193200A patent/JPS5983950A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360118A (en) * | 1985-04-03 | 1988-03-16 | ハイネケン テクニカル サービシーズ ビー ブイ | Mechanical or chemical damage repairing process for recycling bottle surface and equipment therefor |
| JPH0616440A (en) * | 1992-06-30 | 1994-01-25 | Sharp Corp | Method for correcting defect on surface of transparent plate |
| US7473151B2 (en) | 2002-08-26 | 2009-01-06 | Hitachi, Ltd. | Method for manufacturing a substrate for a flat panel display including forming grooves in a surface |
| US7712333B2 (en) * | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
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