CN115954325A - Method for manufacturing device chip - Google Patents

Method for manufacturing device chip Download PDF

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Publication number
CN115954325A
CN115954325A CN202211189890.6A CN202211189890A CN115954325A CN 115954325 A CN115954325 A CN 115954325A CN 202211189890 A CN202211189890 A CN 202211189890A CN 115954325 A CN115954325 A CN 115954325A
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CN
China
Prior art keywords
workpiece
resin layer
device chip
manufacturing
dividing
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Pending
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CN202211189890.6A
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Chinese (zh)
Inventor
小川雄辉
渡部晃司
桥本一辉
青柳元
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Disco Corp
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Disco Corp
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Publication of CN115954325A publication Critical patent/CN115954325A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Abstract

The invention provides a method for manufacturing a device chip, which can appropriately divide a processed object. The method for manufacturing a device chip divides a workpiece having a laminated body constituting devices provided in a plurality of regions defined by a plurality of intersecting planned dividing lines on a front surface side, and manufactures the device chip, the method comprising the steps of: a processing groove forming step of irradiating a laser beam having a wavelength that is absorptive for the stacked body along the planned dividing lines from the front surface side of the object to be processed, and forming processing grooves for cutting the stacked body along the planned dividing lines; a resin layer forming step of forming a resin layer on the front side of the workpiece after the processing groove forming step; and a dividing step of dividing the object to be processed and the resin layer along the lines to be divided, after the resin layer forming step.

Description

Method for manufacturing device chip
Technical Field
The present invention relates to a method for manufacturing a device chip by dividing a workpiece to be processed into device chips.
Background
In a manufacturing process of a device chip, a wafer is used in which devices are formed in a plurality of regions defined by a plurality of planned dividing lines (streets) intersecting each other. The wafer is divided along the lines to be divided, thereby obtaining a plurality of device chips each having a device. The device chip is incorporated in various electronic apparatuses such as a mobile phone, a personal computer, and the like.
In the dicing of the wafer, a cutting apparatus is used. The cutting device includes a chuck table for holding a workpiece and a cutting unit for cutting the workpiece. The cutting unit incorporates a spindle, and an annular cutting tool is attached to a tip portion of the spindle. The wafer is held by the chuck table, and the wafer is cut along the planned dividing lines by cutting the wafer into the wafer while rotating the cutting tool.
In recent years, a process of dividing a wafer by laser processing has been developed. For example, a laser beam having a wavelength that is transparent to the wafer is focused inside the wafer, and the laser beam is scanned along the lines to be divided, thereby forming a modified layer inside the wafer along the lines to be divided. The region of the wafer where the modified layer is formed is more fragile than the other regions. Therefore, when an external force is applied to the wafer on which the modified layer is formed, the modified layer functions as a division start point, and the wafer is divided along the lines to be divided.
The device chips obtained by dividing the wafer are mounted by various mounting methods such as wire bonding and flip chip mounting. For example, the device chip is bonded to a mounting substrate or another device chip via a film-like resin layer (adhesive film) for sealing the device (see patent document 1).
Patent document 1: japanese patent laid-open publication No. 2016-92188
A laminate in which various thin films such as a conductive film functioning as an electrode and an insulating film functioning as an interlayer insulating film (for example, a Low-dielectric-constant insulating film) are laminated is formed on the front surface side of a workpiece (a wafer or the like) used for manufacturing a device chip. The laminate constitutes a device, a Test Element Group (TEG) for inspecting the device, or the like. Then, the work is divided after a resin layer for sealing the device is formed on the work, thereby obtaining a device chip with a bonding material made of resin.
In addition, the stacked body is also formed on the division scheduled line outside the device. When the object is divided into a plurality of device chips, the laminate remaining on the lines to be divided may interfere with the appropriate division of the object. For example, when a workpiece is cut by a cutting tool, there is a concern that a thin film included in a laminate on a planned dividing line may be peeled off due to rotation of the cutting tool, and a device may be damaged or a resin layer may be peeled off. When an external force is applied to the workpiece on which the modified layer is formed to divide the workpiece, the functional layer remaining on the dividing lines may not be appropriately cut together with the workpiece, and peeling of the laminate may occur.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to provide a method for manufacturing a device chip, which can appropriately divide a workpiece.
According to one aspect of the present invention, there is provided a method of manufacturing a device chip by dividing a workpiece having a stacked body constituting a device on a front surface side, the device being provided in a plurality of regions defined by a plurality of intersecting planned dividing lines, the method comprising the steps of: a processing groove forming step of irradiating a laser beam having a wavelength that is absorptive for the laminate along the planned dividing lines from the front surface side of the object to be processed, and forming processing grooves that divide the laminate along the planned dividing lines; a resin layer forming step of forming a resin layer on the front side of the workpiece after the processing groove forming step; and a dividing step of dividing the object to be processed and the resin layer along the dividing lines after the resin layer forming step.
In addition, according to another aspect of the present invention, there is provided a method of manufacturing a device chip by dividing a workpiece having a laminated body constituting a device provided in a plurality of regions defined by a plurality of intersecting planned dividing lines on a front surface side, the method comprising the steps of: a processing groove forming step of irradiating a laser beam having a wavelength that is absorptive for the stacked body along the planned dividing lines from the front surface side of the object to be processed, and forming processing grooves for cutting the stacked body along the planned dividing lines; a support member fixing step of fixing a support member to the front surface side of the workpiece after the machining groove forming step; a back grinding step of grinding the back side of the workpiece after the support member fixing step; a support member removing step of removing the support member from the front surface side of the object to be processed after the back surface grinding step; a resin layer forming step of forming a resin layer on the front side of the workpiece after the support member removing step; and a dividing step of dividing the object to be processed and the resin layer along the dividing lines after the resin layer forming step.
Preferably, the method for manufacturing a device chip further includes a back surface pattern forming step of: after the back grinding step, a pattern is formed on the back side of the workpiece. Preferably, the method for manufacturing a device chip further includes the step of forming a protective film as follows: before the processing groove forming step, a protective film is formed on the front side of the object to be processed. Preferably, the method for manufacturing a device chip further includes the following plasma etching step: after the step of forming the processing groove, an etching gas in a plasma state is supplied from the front side of the object to be processed to remove the processing strain or foreign matter remaining in the object to be processed or the laminate.
In the dividing step, it is preferable that the cutting tool is rotated while being in contact with the work and the resin layer, and the work and the resin layer are cut along the planned dividing lines. Preferably, the method for manufacturing a device chip further includes the step of attaching an expansion sheet as follows: before the dividing step, attaching an extensible extension sheet to the workpiece, the dividing step including the steps of: a modified layer forming step of positioning a converging point of a laser beam having a wavelength that is transparent to the workpiece inside the workpiece and irradiating the laser beam, thereby forming a modified layer along the planned dividing line in the workpiece; and an expanding step of expanding the expanded sheet after the modified layer forming step.
In the method for manufacturing a device chip according to one aspect of the present invention, before dividing the object, the processing grooves for cutting the laminated body are formed along the lines to divide the object. This can avoid peeling of the laminate when the workpiece is divided, and can prevent damage to the device and peeling of the resin layer.
Drawings
Fig. 1 (a) is a perspective view showing a workpiece, and fig. 1 (B) is a cross-sectional view showing a part of the workpiece.
Fig. 2 is a perspective view showing a workpiece supported by an annular frame.
Fig. 3 (a) is a cross-sectional view showing the workpiece in the protective film forming step, and fig. 3 (B) is a cross-sectional view showing a part of the workpiece after the protective film forming step.
Fig. 4 (a) is a cross-sectional view showing the workpiece in the machined groove forming step, and fig. 4 (B) is a cross-sectional view showing a part of the workpiece after the machined groove forming step.
Fig. 5 is a cross-sectional view showing the workpiece in the plasma etching step.
Fig. 6 (a) is a perspective view showing the workpiece in the support member fixing step, and fig. 6 (B) is a cross-sectional view showing a part of the workpiece after the support member fixing step.
Fig. 7 (a) is a perspective view showing the workpiece in the back grinding step, and fig. 7 (B) is a cross-sectional view showing a part of the workpiece after the back grinding step.
Fig. 8 is a cross-sectional view showing a part of a workpiece on which a pattern layer is formed.
Fig. 9 is a perspective view showing the workpiece in the support member removing step.
Fig. 10 is a perspective view showing the workpiece in the resin layer forming step.
Fig. 11 (a) is a cross-sectional view showing the workpiece in the dividing step, fig. 11 (B) is a cross-sectional view showing a part of the workpiece in which a cut is formed inside the machining grooves, and fig. 11 (C) is a cross-sectional view showing a part of the workpiece in which a cut is formed between the pair of machining grooves.
Fig. 12 (a) is a cross-sectional view showing the workpiece in the modified layer forming step, and fig. 12 (B) is a cross-sectional view showing a part of the workpiece after the modified layer forming step.
Fig. 13 (a) is a cross-sectional view showing the workpiece in the expanding step, and fig. 13 (B) is a cross-sectional view showing a part of the workpiece after the expanding step.
Description of the reference symbols
11: a workpiece; 11a: front side (1 st side); 11b: a back surface (2 nd surface); 13: a laminate; 15: dividing a predetermined line (street); 17: a device; 19: a connection electrode (bump); 21: electrodes (embedded electrodes, through electrodes); 23: a frame; 23a: an opening; 25: a belt; 27: a protective film; 29: processing a tank; 31: a support member; 33: an adhesive layer; 35: a pattern layer; 37: a frame; 37a: an opening; 39: a belt; 41: a resin layer; 43: a cut mark (notch); 45: a device chip; 47: modified layer (altered layer); 49: cracks (crazing); 2: a spin coater; 4: a rotary table (chuck table); 4a: a holding surface; 6: a clamp; 8: a protective film material supply unit; 10: a protective film material; 20: a laser processing device; 22: a chuck table (holding table); 22a: a holding surface; 24: a clamp; 26: a laser irradiation unit; 28: a laser processing head; 30: a laser beam; 40: a plasma processing apparatus; 42: a chamber; 42a: a side wall; 42b: an opening; 42c: a bottom wall; 42d: an upper wall; 44: a door; 46: an opening/closing unit; 48: piping; 50: a pressure reducing unit; 52: a table base; 52a: an aspiration path; 52b: a flow path; 54: a holding section; 56: a support portion; 58: a chuck table (holding table); 60: a main body portion; 60a: an aspiration path; 62: an electrode; 64: a DC power supply; 66: a suction pump; 68: a circulation unit; 70: a gas supply unit; 72: providing a tube; 72a: providing a port; 74a, 74b, 74c: a valve; 76a, 76b, 76c: a flow controller; 78a, 78b, 78c: a valve; 80a, 80b, 80c: a gas supply source; 82: an electrode; 84: a high frequency power supply; 86: a dispersing member; 88: piping; 100: a grinding device; 102: a chuck table (holding table); 102a: a holding surface; 104: a grinding unit; 106: a main shaft; 108: a mounting base; 110: grinding the grinding wheel; 112: a base station; 114: grinding the grinding tool; 120: a cutting device; 122: a chuck table (holding table); 122a: a holding surface; 124: a clamp; 126: a cutting unit; 128: a housing; 130: a main shaft; 132: a cutting tool; 140: a laser processing device; 142: a chuck table (holding table); 142a: a holding surface; 144: a clamp; 146: a laser irradiation unit; 148: a laser processing head; 150: a laser beam; 160: an expansion device; 162: a drum; 164: a roller; 166: a support member; 168: a work table; 170: and (4) clamping.
Detailed Description
Hereinafter, an embodiment of one embodiment of the present invention will be described with reference to the drawings. First, a configuration example of a workpiece that can be used in the method for manufacturing a device chip according to the present embodiment will be described. Fig. 1 (a) is a perspective view showing the workpiece 11.
The workpiece 11 is a disk-shaped wafer (substrate) made of a semiconductor such as silicon, and has a front surface (1 st surface) 11a and a back surface (2 nd surface) 11b which are substantially parallel to each other. However, the material, shape, structure, size, and the like of the workpiece 11 are not limited. For example, the workpiece 11 may be a substrate made of a semiconductor other than silicon (GaAs, siC, inP, gaN, or the like), sapphire, glass, ceramics, resin, metal, or the like.
A laminate 13 including a plurality of laminated thin films is provided on the front surface 11a side of the workpiece 11. The laminate 13 includes various thin films such as a conductive film functioning as an electrode, a wiring, a terminal, and the like, and an insulating film (for example, a Low dielectric constant insulating film (Low-k film)) functioning as an interlayer insulating film, and is formed on the entire front surface 11a side of the workpiece 11.
The workpiece 11 is divided into a plurality of rectangular regions by a plurality of planned dividing lines (streets) 15 arranged in a grid pattern so as to intersect each other. Further, devices 17 such as an IC (Integrated Circuit), an LSI (Large Scale Integration), an LED (Light Emitting Diode), and an MEMS (Micro Electro Mechanical Systems) device are formed in each of a plurality of regions divided by the planned dividing line 15. However, there is no limitation on the kind, number, shape, configuration, size, arrangement, and the like of the devices 17.
A plurality of connection electrodes (bumps) 19 are provided on the device 17 so as to protrude from the front surface of the device 17. For example, the connection electrode 19 is a spherical electrode formed of a metal material such as solder, and is connected to another electrode included in the device 17.
Fig. 1 (B) is a cross-sectional view showing a part of the workpiece 11. The plurality of regions surrounded by the lines to divide 15 in the stacked body 13 constitute devices 17, respectively. For example, the semiconductor element is constituted by the front surface 11a side of the workpiece 11 and the thin film included in the stacked body 13. In addition, a part of the thin film (Low-k film or the like) included in the stacked body 13 is also formed on the lines to divide 15. The portion of the stacked body 13 formed on the lines to divide 15 may constitute a TEG (test element group) or the like used for the inspection of the device 17.
A plurality of electrodes (embedded electrodes, through electrodes) 21 are embedded in each of a plurality of regions of the workpiece 11 defined by the planned dividing lines 15. The electrode 21 is formed in a columnar shape along the thickness direction of the workpiece 11, and is connected to the device 17. The material of the electrode 21 is not limited, and for example, a metal such as copper, tungsten, or aluminum is used.
The electrodes 21 are formed from the device 17 toward the rear surface 11b side of the workpiece 11, and the length (height) of the electrodes 21 is smaller than the thickness of the workpiece 11. Therefore, the electrode 21 is not exposed on the rear surface 11b side of the workpiece 11, and is buried in the workpiece 11. An insulating layer (not shown) for insulating the workpiece 11 and the electrode 21 is provided between the workpiece 11 and the electrode 21.
The object 11 is divided along the lines to divide 15 by performing various kinds of processing such as cutting processing and laser processing on the object 11, thereby manufacturing a plurality of device chips each having a device 17. In machining the workpiece 11, the workpiece 11 is supported by an annular frame in order to facilitate handling of the workpiece 11.
Fig. 2 is a perspective view showing the workpiece 11 supported by the annular frame 23. The frame 23 is an annular member formed of a metal such as SUS (stainless steel), and a circular opening 23a penetrating the frame 23 in the thickness direction is provided in the center of the frame 23. The diameter of the opening 23a is larger than the diameter of the workpiece 11.
A circular tape 25 having a diameter larger than that of the workpiece 11 is attached to the rear surface 11b side of the workpiece 11. For example, the belt 25 comprises: a film-shaped substrate formed in a circular shape; and an adhesive layer (paste layer) provided on the substrate. The base material is formed of a resin such as polyolefin, polyvinyl chloride, or polyethylene terephthalate. The adhesive layer is made of an epoxy, acrylic, or rubber adhesive. The adhesive layer may be an ultraviolet-curable resin that is cured by irradiation with ultraviolet light.
In a state where the workpiece 11 is disposed inside the opening 23a of the frame 23, the central portion of the tape 25 is attached to the rear surface 11b side of the workpiece 11, and the outer peripheral portion of the tape 25 is attached to the frame 23. Thereby, the workpiece 11 is supported by the frame 23 via the belt 25.
Next, a specific example of a device chip manufacturing method for manufacturing device chips by dividing the workpiece 11 will be described. In the present embodiment, the device chip is manufactured by forming a processing groove for cutting the laminate 13 along the lines to divide 15, forming a resin layer on the front surface 11a side of the workpiece 11, and then dividing the workpiece 11 and the resin layer along the lines to divide 15.
First, a protective film is formed on the front surface 11a side (the stacked body 13 side) of the workpiece 11 (protective film forming step). Fig. 3 (a) is a cross-sectional view showing the workpiece 11 in the protective film forming step. For example, in the protective film forming step, a protective film is formed on the workpiece 11 by the spin coater 2.
The spin coater 2 includes a spin table (chuck table) 4 for holding a workpiece 11. The upper surface of the rotary table 4 constitutes a flat holding surface 4a for holding the workpiece 11. The holding surface 4a is connected to a suction source (not shown) such as an ejector via a flow path (not shown) formed inside the rotary table 4, a valve, and the like.
A rotation driving source (not shown) such as a motor for rotating the rotary table 4 about a rotation axis substantially parallel to the vertical direction (height direction, vertical direction) is connected to the rotary table 4. Further, a plurality of jigs 6 for holding and fixing the frame 23 are provided around the rotary table 4.
A protective film material supply unit 8 that supplies a protective film material 10 as a raw material of a protective film is provided above the rotary table 4. For example, the protective film material supply unit 8 has a nozzle for dropping the protective film material 10 toward the workpiece 11 held by the rotary table 4.
In the protective film forming step, first, the workpiece 11 is held by the rotary table 4. Specifically, the workpiece 11 is disposed on the rotary table 4 such that the front surface 11a side (the stacked body 13 side) faces upward and the rear surface 11b side (the belt 25 side) faces the holding surface 4a. In addition, the frame 23 is fixed by a plurality of clamps 6. When a suction force (negative pressure) from a suction source is applied to the holding surface 4a in this state, the workpiece 11 is sucked and held by the rotary table 4 via the belt 25.
Next, the protective film material 10 is supplied from the nozzle of the protective film material supply unit 8 toward the workpiece 11 while rotating the rotary table 4. Thereby, the front surface 11a side of the workpiece 11 is covered with the protective film material 10. Then, the protective film material 10 applied to the workpiece 11 is dried and hardened, thereby forming a protective film on the front surface 11a side of the workpiece 11.
Fig. 3 (B) is a cross-sectional view showing a part of the workpiece 11 after the protective film forming step. A protective film 27 is formed on the front surface 11a side of the workpiece 11 so as to cover the stacked body 13 and the connection electrode 19.
In addition, the material of the protective film 27 is not limited. For example, as the protective film material 10 (see fig. 3 a), a water-soluble resin such as PVA (polyvinyl alcohol), PEG (polyethylene glycol), PEO (polyethylene oxide), and PVP (polyvinyl pyrrolidone) is used. In this case, the protective film 27 made of a water-soluble resin is formed. A resin tape may be attached as the protective film 27 to the front surface 11a side of the workpiece 11.
Next, a laser beam having a wavelength that is absorptive for the stacked body 13 is irradiated from the front face 11a side of the object 11 along the lines to divide 15, and processing grooves for cutting the stacked body 13 are formed along the lines to divide 15 (processing groove forming step). Fig. 4 (a) is a cross-sectional view showing the workpiece 11 in the machining groove forming step.
In the machining groove forming step, the workpiece 11 is subjected to laser machining by the laser machining device 20. The X-axis direction (the machining feed direction, the 1 st horizontal direction) and the Y-axis direction (the indexing feed direction, the 2 nd horizontal direction) are perpendicular to each other. The Z-axis direction (vertical direction, and height direction) is a direction perpendicular to the X-axis direction and the Y-axis direction.
The laser processing apparatus 20 includes a chuck table (holding table) 22 that holds the workpiece 11. The upper surface of the chuck table 22 is a circular flat surface substantially parallel to the horizontal direction (XY plane direction), and constitutes a holding surface 22a for holding the workpiece 11. The holding surface 22a is connected to a suction source (not shown) such as an injector via a flow path (not shown) formed inside the chuck table 22, a valve (not shown), and the like.
A ball screw type moving mechanism (not shown) for moving the chuck table 22 in the X-axis direction and the Y-axis direction is coupled to the chuck table 22. A rotation driving source (not shown) such as a motor for rotating the chuck table 22 about a rotation axis substantially perpendicular to the holding surface 22a is connected to the chuck table 22. Further, a plurality of jigs 24 for holding and fixing the frame 23 are provided around the chuck table 22.
The laser processing apparatus 20 includes a laser irradiation unit 26. The laser irradiation unit 26 has: YAG laser and YVO 4 LaserLaser oscillators (not shown) such as a laser oscillator and a YLF laser; and a laser processing head 28 disposed above the chuck table 22. The laser processing head 28 incorporates an optical system for guiding a laser beam emitted from a laser oscillator to the workpiece 11, and the optical system includes an optical element such as a condenser lens for condensing the laser beam. The laminated body 13 is processed by the laser beam 30 irradiated from the laser irradiation unit 26.
In the machining groove forming step, the workpiece 11 is first held by the chuck table 22. Specifically, the workpiece 11 is disposed on the chuck table 22 such that the front surface 11a side (the laminated body 13 side) faces upward and the rear surface 11b side (the belt 25 side) faces the holding surface 22a. The frame 23 is fixed by a plurality of clamps 24. In this state, when a suction force (negative pressure) of a suction source acts on the holding surface 22a, the workpiece 11 is sucked and held by the chuck table 22 via the belt 25.
Next, the chuck table 22 is rotated to align the longitudinal direction of the predetermined line to divide 15 with the machining feed direction (X-axis direction). The position of the chuck table 22 in the indexing direction (Y axis direction) is adjusted so that the region to which the laser beam 30 is applied matches the positions of the regions inside both ends of the line to divide 15 in the width direction (for example, the center of the line to divide 15 in the width direction) in the Y axis direction. The position of the laser processing head 28 and the arrangement of the optical system are adjusted so that the focal point of the laser beam 30 is positioned at the same height position (position in the Z-axis direction) as the front surface or the inside of the laminated body 13.
Then, the chuck table 22 is moved in the machining feed direction (X-axis direction) while the laser beam 30 is irradiated from the laser machining head 28. Thereby, the chuck table 22 and the laser beam 30 are relatively moved in the machining feed direction (X-axis direction) at a predetermined speed (machining feed speed). As a result, the laser beam 30 is irradiated from the front surface 11a side (the laminated body 13 side) of the workpiece 11 along the lines to divide 15.
The irradiation conditions of the laser beam 30 are set so that ablation processing is performed on the laminate 13. Specifically, the wavelength of the laser beam 30 is set so that at least a part of the laser beam 30 is absorbed by the stacked body 13. That is, the laser beam 30 is a laser beam having a wavelength that is absorptive for the laminated body 13. In addition, other irradiation conditions of the laser beam 30 are also set as appropriate to appropriately perform ablation processing on the laminate 13. For example, the irradiation condition of the laser beam 30 may be set as follows.
Figure BDA0003868849610000091
When the laminated body 13 is irradiated with the laser beam 30 along the planned dividing lines 15, the areas of the laminated body 13 irradiated with the laser beam 30 are removed by ablation processing. As a result, a linear machining groove 29 is formed along the line to divide 15 on the front surface 11a side of the workpiece 11.
The depth of the processing tank 29 is set to be equal to or greater than the thickness of the stacked body 13. Therefore, when the processing tank 29 is formed, the laminate 13 is cut along the planned dividing line 15, and the front surface 11a side of the object 11 is exposed inside the processing tank 29. Depending on the irradiation conditions of the laser beam 30, a part of the workpiece 11 on the front surface 11a side is also slightly removed, and a processing groove 29 having a depth exceeding the thickness of the laminate 13 is formed.
In the groove forming step, the laser beam 30 may be irradiated to the same region on each planned dividing line 15 a plurality of times to form the groove 29 having a desired depth. In this case, the deep machined groove 29 can be formed while suppressing the average output of the laser beam 30.
The laser beam 30 may be shaped such that the region (irradiation region) of the laminated body 13 to which the laser beam 30 is irradiated is linear or rectangular. In this case, the laminated body 13 is irradiated with the laser beam 30 so that the longitudinal direction of the irradiated region is along the width direction of the planned dividing line 15, thereby forming the wide processed groove 29.
Further, a plurality of processing grooves 29 may be formed inside each planned dividing line 15. For example, a pair of processing grooves 29 substantially parallel to each other are formed on one end side and the other end side in the width direction of the planned dividing line 15 (see fig. 11C). In this case, one end side of the planned dividing line 15 is irradiated with the laser beam 30 to form one machined groove 29, and then the other end side of the planned dividing line 15 is irradiated with the laser beam 30 to form the other machined groove 29. The pair of processing grooves 29 may be formed simultaneously by scanning along the lines to divide 15 while branching the laser beam 30 so as to converge at two points.
When ablation processing is performed on the workpiece 11 or the laminate 13, a melt (debris) of the workpiece 11 or the laminate 13 is generated and scattered. However, when the protective film 27 is formed on the front surface 11a side of the workpiece 11, the debris is less likely to adhere to the workpiece 11 or the laminate 13, and contamination of the workpiece 11 and the device 17 can be prevented.
Then, the same process is repeated to irradiate the laser beam 30 along the other planned dividing lines 15. As a result, the processing grooves 29 are formed in a lattice shape along all the lines to divide 15.
Fig. 4 (B) is a cross-sectional view showing a part of the workpiece 11 after the machined groove forming step. By performing the processing groove forming step, the processing groove 29 that cuts the laminated body 13 to reach the front face 11a side of the workpiece 11 is formed along the planned dividing line 15.
When the processing groove forming step is completed, the protective film 27 is removed. This removes foreign matter such as debris adhering to the protective film 27 together with the protective film 27. When the protective film 27 is formed of a water-soluble resin, the protective film 27 can be easily removed only by supplying a cleaning liquid such as pure water to the workpiece 11, and the process of removing the protective film 27 is simplified.
In addition, the protective film forming step may be omitted in the case where the amount of the chips generated in the working groove forming step is small, the case where scattering of the chips does not become a problem, or the like. In this case, the step of removing the protective film 27 after the processing groove forming step can be omitted.
Next, an etching gas in a plasma state is supplied from the front surface 11a side of the workpiece 11, and the processing strain and foreign matter remaining in the workpiece 11 or the laminated body 13 are removed (plasma etching step). Fig. 5 is a cross-sectional view showing the workpiece 11 in the plasma etching step. In the plasma etching step, the workpiece 11 and the laminated body 13 are subjected to plasma etching by the plasma processing apparatus 40. In the plasma etching step, the workpiece 11 may not be supported by the frame 23.
The plasma processing apparatus 40 has a chamber 42. The chamber 42 corresponds to a processing space for performing plasma processing. The side wall 42a of the chamber 42 is provided with an opening 42b through which the workpiece 11 passes when the workpiece 11 is carried in and out.
A door 44 that opens and closes the opening 42b is provided on the outer side of the side wall 42 a. Further, an opening/closing means 46 such as an air cylinder is connected to the door 44. The opening/closing means 46 moves the door 44 downward to expose the opening 42b, thereby allowing the workpiece 11 to be carried into and out of the processing space. The opening/closing unit 46 moves the door 44 upward to close the opening 42b, thereby sealing the processing space.
A pipe 48 such as a pipe is connected to the bottom wall 42c of the chamber 42, and a decompression means 50 such as an exhaust pump is connected to the pipe 48. When the decompression unit 50 is operated in a state where the opening 42b is closed by the door 44, the interior of the chamber 42 is exhausted and decompressed.
A table base 52 is provided inside the chamber 42. The table base 52 includes: a cylindrical holding portion 54; and a cylindrical support portion 56 coupled to the holding portion 54. The diameter of the support portion 56 is smaller than the diameter of the holding portion 54, and the support portion 56 is formed downward from the center of the lower surface of the holding portion 54.
A chuck table (holding table) 58 for holding the workpiece 11 is provided on the upper surface of the holding portion 54. The chuck table 58 has a disk-shaped main body 60 made of an insulator, and a plurality of electrodes 62 are embedded in the main body 60. Each of the plurality of electrodes 62 is connected to a DC power supply 64 capable of applying a predetermined voltage (e.g., a high voltage of about 5 kV) to the electrode 62.
Further, the body portion 60 of the chuck table 58 is provided with a plurality of suction passages 60a opening on the upper surface of the body portion 60. The suction passage 60a is connected to a suction pump 66 via a suction passage 52a formed inside the table base 52.
When the workpiece 11 is held by the chuck table 58, the workpiece 11 is first placed on the chuck table 58, and the suction pump 66 is operated. Thereby, the workpiece 11 is sucked by the suction force of the suction pump 66 to the upper surface of the chuck table 58. In this state, when a voltage is applied to the plurality of electrodes 62 by the DC power supply 64 to generate a potential difference between the electrodes 62, the workpiece 11 is held by attraction by electrostatic force. Thus, even in a state where the interior of the chamber 42 is depressurized, the workpiece 11 can be held on the chuck table 58.
Further, a flow path 52b is formed inside the table base 52. Both ends of the flow path 52b are connected to a circulation unit 68 for circulating a refrigerant. When the circulation unit 68 is operated, the refrigerant flows from one end of the flow path 52b toward the other end, and cools the table base 52.
A gas supply unit 70 for supplying an etching gas is connected to an upper portion of the chamber 42. The gas supply unit 70 plasmatizes the etching gas outside the chamber 42 and supplies the etching gas in a plasma state to the inside of the chamber 42.
Specifically, the gas supply unit 70 includes a metal supply pipe 72 through which the etching gas supplied to the chamber 42 flows. One end side (downstream side) of the supply pipe 72 is connected to the inside of the chamber 42 via the upper wall 42d of the chamber 42. The other end (upstream side) of the supply pipe 72 is connected to a gas supply source 80a via a valve 74a, a flow rate controller 76a, and a valve 78a, connected to a gas supply source 80b via a valve 74b, a flow rate controller 76b, and a valve 78b, and connected to a gas supply source 80c via a valve 74c, a flow rate controller 76c, and a valve 78 c.
When a predetermined gas is supplied from each of the gas supply sources 80a, 80b, and 80c at a predetermined flow rate, a mixed gas is generated in the supply pipe 72. The mixed gas is used as an etching gas for etching the workpiece 11. For example, the gas supply source 80a supplies SF 6 An isofluorine-based gas, a gas supply source 80b for supplying oxygen (O) 2 ) The gas supply source 80c supplies an inert gas such as He. However, gas is supplied from gas supply sources 80a, 80b, 80cThe composition, flow rate ratio, and the like of the body may be arbitrarily changed depending on the material of the object to be processed and the processing conditions.
The gas supply unit 70 has an electrode 82 for applying a high-frequency voltage to the etching gas generated in the supply pipe 72. The electrode 82 is disposed so as to surround the supply tube 72 at the midstream portion of the supply tube 72, and a high-frequency power supply 84 is connected to the electrode 82. The high-frequency power supply 84 applies a high-frequency voltage having a voltage value of 0.5kV or more and 5kV or less and a frequency of 450kHz or more and 2.45GHz or less to the electrode 82, for example.
When a high-frequency voltage is applied to the etching gas flowing in the supply pipe 72 using the electrode 82 and the high-frequency power supply 84, the etching gas changes into a plasma state containing ions and radicals. Also, an etching gas in a plasma state is supplied from a supply port 72a opened at the downstream end of the supply pipe 72 to the inside of the chamber 42. Thus, the etching gas plasmatized outside the chamber 42 is supplied to the inside of the chamber 42.
A dispersion member 86 is attached to the inside of the upper wall 42d of the chamber 42 so as to cover the supply port 72 a. The etching gas in a plasma state flowing from the supply pipe 72 into the interior of the chamber 42 is dispersed above the chuck table 58 by the dispersing member 86.
A pipe 88 such as a pipe is connected to the side wall 42a of the chamber 42, and an inert gas supply source (not shown) for supplying an inert gas is connected to the pipe 88. When the inert gas is supplied from the inert gas supply source to the chamber 42 through the pipe 88, the inside of the chamber 42 is filled with the inert gas (internal gas). The pipe 88 may be connected to the gas supply source 80c via a valve (not shown), a flow rate controller (not shown), or the like. In this case, an inert gas is supplied from the gas supply source 80c to the inside of the chamber 42 through the pipe 88.
The etching gas supplied from the gas supply unit 70 is dispersed by the dispersing member 86 provided below the supply port 72a and supplied to the entire workpiece 11 held by the chuck table 58. The etching gas thus converted into plasma acts on the workpiece 11 and the laminated body 13 (see fig. 4B), and plasma etching is performed on the workpiece 11 and the laminated body 13.
When the gas in a plasma state is supplied to the workpiece 11 and the laminated body 13 after the machining groove forming step, the machining strain (machining mark) formed inside the machining groove 29 or in the periphery of the machining groove 29 by the laser machining is removed. In addition, foreign matter such as debris adhering to the workpiece 11 or the laminated body 13 is removed. This can suppress a decrease in the bending strength and a decrease in the quality of the device chip obtained by dividing the workpiece 11.
When the etching gas that has been plasmatized outside the chamber 42 passes through the supply pipe 72 made of metal, ions contained in the etching gas are adsorbed by the inner wall of the supply pipe 72 and hardly reach the inside of the chamber 42. As a result, the etching gas having a high proportion of radicals is introduced into the chamber 42 and supplied to the workpiece 11 and the stacked body 13. Since the etching gas having a high proportion of radicals is likely to enter the narrow region inside the workpiece 11 and the stacked body 13, the inside of the processing tank 29 (see fig. 4B) is likely to be etched by the etching gas.
In the plasma etching, a mask layer may be formed on the stacked body 13. For example, the mask layer is patterned so as to expose the regions of the object 11 or the stacked body 13 that overlap the lines to divide 15. By supplying an etching gas in a plasma state through the mask layer, the region of the workpiece 11 and the stacked body 13 where the laser processing is performed is partially etched.
There is no limitation on the material or formation method of the mask layer. For example, the mask layer may be formed of a resist made of a photosensitive resin. Further, the protective film 27 (see fig. 4B) may be used as a mask layer without removing the protective film 27 after the processing groove forming step. In this case, the protective film 27 is removed after the plasma etching step.
In addition, the plasma etching step may be omitted in the case where the processing is performed under processing conditions under which the processing strain or chipping does not easily occur in the processed object 11 or the laminated body 13 in the processing groove forming step, in the case where the chipping can be reliably removed by cleaning after the processing groove forming step, in the case where there is no problem even if the processing strain or chipping remains in the processed object 11 or the laminated body 13, or in the case where there is no problem in the operation or quality of the device chip.
Next, a support member is fixed to the front surface 11a side of the workpiece 11 (support member fixing step). Fig. 6 (a) is a perspective view showing the workpiece 11 in the support member fixing step.
The support member 31 is a member that supports the workpiece 11 in a back grinding step (see fig. 7 a) described later. For example, a disk-shaped substrate (support substrate) made of glass, silicon, resin, ceramic, or the like is used as the support member 31. The support member 31 is bonded to the front surface 11a side (the laminated body 13 side) of the workpiece 11 via the adhesive layer 33. As the adhesive layer 33, an epoxy-based, acrylic-based or rubber-based adhesive, an ultraviolet-curable resin, or the like can be used.
Fig. 6 (B) is a cross-sectional view showing a part of the workpiece 11 after the support member fixing step. When the support member 31 is fixed to the workpiece 11, the workpiece 11 is supported by the support member 31. In addition, a flexible sheet-like member may be used as the support member 31. For example, a support tape having the same material and structure as the tape 25 (see fig. 2) may be attached to the workpiece 11 as the support member 31.
Next, the back surface 11b side of the workpiece 11 is ground (back surface grinding step). Fig. 7 (a) is a perspective view showing the workpiece 11 in the back grinding step. In the back grinding step, the workpiece 11 is ground by the grinding apparatus 100.
The grinding apparatus 100 includes a chuck table (holding table) 102 that holds the workpiece 11. The upper surface of the chuck table 102 is a circular flat surface substantially parallel to the horizontal direction, and constitutes a holding surface 102a for holding the workpiece 11. The holding surface 102a is connected to a suction source (not shown) such as an injector via a flow path (not shown) formed inside the chuck table 102, a valve (not shown), and the like.
A moving mechanism (not shown) for moving the chuck table 102 in the horizontal direction is connected to the chuck table 102. A rotation drive source such as a motor for rotating the chuck table 102 about a rotation axis substantially parallel to the vertical direction is connected to the chuck table 102.
A grinding unit 104 is provided above the chuck table 102. The grinding unit 104 has a columnar main shaft 106 disposed along the vertical direction. A disk-shaped mount 108 made of metal or the like is fixed to a tip end (lower end) of the spindle 106. A rotation drive source (not shown) such as a motor for rotating the main shaft 106 is connected to a base end portion (upper end portion) of the main shaft 106.
An annular grinding wheel 110 is attached to the mounting seat 108. The grinding wheel 110 is a tool for grinding the workpiece 11, and is fixed to the lower surface of the mounting base 108 by a fixing member such as a bolt. The grinding wheel 110 is rotated about a rotation axis substantially parallel to the vertical direction by power transmitted from a rotary drive source through the spindle 106 and the mount 108.
The grinding wheel 110 has an annular base 112. The base 112 is formed of metal such as aluminum or stainless steel and has substantially the same diameter as the mount 108. Further, a plurality of grindstones 114 are fixed to the lower surface side of the base 112. For example, the plurality of grinders 114 are formed in a rectangular parallelepiped shape and arranged in a ring shape at substantially equal intervals along the circumferential direction of the base 112.
The grinding tool 114 includes: abrasive grains formed of diamond, cBN (cubic Boron Nitride), or the like; and a bonding material fixing the abrasive grains. As the bonding material, a metal bonding agent, a resin bonding agent, a ceramic bonding agent, or the like is used. However, the material, shape, structure, size, and the like of the grinding stone 114 are not limited. In addition, the number of the grinding stones 114 may be set arbitrarily.
In the back grinding step, the workpiece 11 is first held by the chuck table 102. Specifically, the workpiece 11 is disposed on the chuck table 102 such that the front surface 11a side (the stacked body 13 side, the supporting member 31 side) faces the holding surface 102a and the rear surface 11b side is exposed upward. When a suction force (negative pressure) from a suction source is applied to the holding surface 102a in this state, the workpiece 11 is sucked and held by the chuck table 102 via the support member 31.
Next, the chuck table 102 is moved to dispose the workpiece 11 below the grinding unit 104. At this time, the positional relationship between the chuck table 102 and the grinding unit 104 is adjusted so that the rotation axis of the chuck table 102 (the center of the workpiece 11) overlaps the orbit (the rotation path) of the grinding wheel 114.
While the chuck table 102 and the grinding wheel 110 are rotated, the grinding wheel 110 is lowered, and the plurality of rotating grinding stones 114 are brought into contact with the back surface 11b side of the workpiece 11. Thereby, the back surface 11b side of the workpiece 11 is ground, and the workpiece 11 is thinned.
Fig. 7 (B) is a cross-sectional view showing a part of the workpiece 11 after the back grinding step. Grinding of the workpiece 11 is continued until the electrode 21 embedded in the workpiece 11 is exposed on the back surface 11b of the workpiece 11. Thereby, a through electrode penetrating the workpiece 11 in the thickness direction is formed.
Alternatively, the electrode 21 may be exposed on the rear surface 11b of the workpiece 11 by performing another process after grinding the workpiece 11. For example, the workpiece 11 may be ground in a back grinding step until the electrode 21 is exposed on the back surface 11b of the workpiece 11, and then the back surface 11b of the workpiece 11 may be subjected to a treatment such as dry etching, wet etching, or grinding, thereby exposing the electrode 21 on the back surface 11b of the workpiece 11. In this case, the grinding wheel 114 can be prevented from contacting the electrode 21 and scattering the metal contained in the electrode 21.
Next, a pattern is formed on the back surface 11b side of the object 11 (back surface pattern forming step). Fig. 8 is a cross-sectional view showing a part of the workpiece 11 on which the pattern layer 35 is formed.
The pattern layer 35 is a functional layer having a predetermined function as in the laminate 13, and includes a pattern of an insulating film, a conductive film, or a laminate thereof. For example, the pattern layer 35 includes connection electrodes connected to the electrodes 21, an insulating layer for insulating the connection electrodes from each other, and wirings, terminals, elements, and the like connected to the connection electrodes.
The pattern layer 35 is appropriately designed according to the structure and function of the device chip obtained by dividing the workpiece 11, the structure and function of the mounting target of the device chip, and the like. In addition, in the case where the pattern layer 35 does not need to be formed, the back surface pattern forming step may be omitted.
Next, the support member 31 is removed from the front surface 11a side of the workpiece 11 (support member removing step). Fig. 9 is a perspective view showing the workpiece 11 in the support member removing step.
In the support member removing step, first, the tape 39 is attached to the back surface 11b side of the workpiece 11. Specifically, in a state where the workpiece 11 is disposed inside the opening 37a of the annular frame 37, the central portion of the tape 39 is attached to the rear surface 11b side of the workpiece 11, and the outer peripheral portion of the tape 39 is attached to the frame 37. Thereby, the workpiece 11 is supported by the frame 37 via the belt 39.
The frame 37 and the belt 39 have the same structure, material, and the like as those of the frame 23 and the belt 25 (see fig. 2), respectively. As the tape 39, a sheet having extensibility (an expansion sheet) may be used as described later.
Next, the support member 31 is moved in a direction away from the workpiece 11 while holding the workpiece 11, thereby peeling the support member 31 from the workpiece 11. Thereby, the support member 31 is removed from the workpiece 11.
In addition, when the support member 31 is peeled off, the adhesive layer 33 may be subjected to a predetermined treatment in advance to reduce the adhesive force of the adhesive layer 33. This makes it easy to separate the support member 31 from the workpiece 11. For example, in the case where the adhesive layer 33 is an ultraviolet-curable resin, the support member 31 is removed after the adhesive layer 33 is irradiated with ultraviolet light. In addition, when the adhesive layer 33 remains on the workpiece 11 after the removal of the support member 31, the workpiece 11 may be subjected to a cleaning process.
Next, a resin layer is formed on the front surface 11a side of the workpiece 11 (resin layer forming step). Fig. 10 is a perspective view showing the workpiece 11 in the resin layer forming step.
The resin layer 41 corresponds to an underfill material when mounting device chips obtained by dividing the workpiece 11. For example, NCF (Non Conductive Film) is used as the resin layer 41. NCF is a film obtained by molding a resin into a sheet shape, and has adhesiveness and insulation properties.
The resin layer 41 (NCF) is formed to have substantially the same diameter as the workpiece 11, and is attached to the front surface 11a side of the workpiece 11 so as to cover the entire laminate 13. Thereby, the resin layer 41 is formed on the front surface 11a side of the workpiece 11, and the device 17 and the connection electrode 19 are sealed by the resin layer 41.
However, the kind of the resin layer 41 is not limited. For example, the resin layer 41 may be formed by applying NCP (Non Conductive Paste) to the front surface 11a side of the workpiece 11. In addition, the material of the resin layer 41 is also not limited. For example, the resin layer 41 mainly composed of an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, a polyimide resin, or the like is used. The resin layer 41 may contain various additives such as an oxidizing agent and a filler.
Through the above steps, a wafer (wafer with grooves) having the object 11, the laminate 13, and the resin layer 41 and provided with the processing grooves 29 for cutting the laminate 13 along the lines to divide 15 is obtained. That is, the above-described steps correspond to a method for manufacturing a grooved wafer.
Next, the workpiece 11 and the resin layer 41 are divided along the lines to divide 15 (dividing step). Fig. 11 (a) is a cross-sectional view showing the workpiece 11 in the dividing step. For example, in the dividing step, the workpiece 11 and the resin layer 41 are cut by the cutting device 120.
The cutting device 120 includes a chuck table (holding table) 122 for holding the workpiece 11. The upper surface of the chuck table 122 is a circular flat surface substantially parallel to the horizontal direction (XY plane direction), and constitutes a holding surface 122a for holding the workpiece 11. The holding surface 122a is connected to a suction source (not shown) such as an injector via a flow path (not shown) formed inside the chuck table 122, a valve (not shown), and the like.
A ball screw type moving mechanism (not shown) for moving the chuck table 122 in the X-axis direction is connected to the chuck table 122. A rotation driving source (not shown) such as a motor for rotating the chuck table 122 about a rotation axis substantially perpendicular to the holding surface 122a is connected to the chuck table 122. Further, a plurality of jigs 124 fixed by holding the frame 37 are provided around the chuck table 122.
A cutting unit 126 is disposed above the chuck table 122. The cutter unit 126 has a cylindrical housing 128. A cylindrical main shaft 130 arranged along the Y-axis direction is housed in the housing 128. A tip end portion (one end portion) of the main shaft 130 is exposed outside the housing 128, and a rotation drive source such as a motor is connected to a base end portion (the other end portion) of the main shaft 130.
An annular cutting tool 132 is attached to the tip of the spindle 130. The cutting tool 132 is rotated about a rotation axis substantially parallel to the Y-axis direction by power transmitted from a rotary drive source via the spindle.
As the cutting tool 132, for example, a hub type cutting tool (hub tool) is used. The hub cutter is configured by integrating an annular base formed of metal or the like and an annular cutting blade formed along the outer peripheral edge of the base. The cutting edge of the hub cutter is constituted by an electroformed grindstone including abrasive grains made of diamond or the like and a bonding material such as a nickel plating layer for fixing the abrasive grains. However, a washer-type cutting tool (washer tool) may also be used as the cutting tool 132. The gasketed cutter is constituted only by an annular cutting edge including a bonding material of abrasive grains and fixed abrasive grains made of metal, ceramic, resin, or the like.
A ball screw type moving mechanism (not shown) is coupled to the cutting unit 126. The moving mechanism moves the cutting unit 126 in the Y-axis direction and moves up and down in the Z-axis direction.
In the dividing step, the workpiece 11 is first held by the chuck table 122. Specifically, the workpiece 11 is disposed on the chuck table 122 such that the front surface 11a side (the laminate 13 side and the resin layer 41 side) faces upward and the rear surface 11b side (the belt 25 side) faces the holding surface 122a. The frame 37 is fixed by a plurality of clamps 124. When a suction force (negative pressure) of a suction source is applied to the holding surface 122a in this state, the workpiece 11 is held by the chuck table 122 via the belt 39.
Next, the chuck table 122 is rotated to align the longitudinal direction of the predetermined line to divide 15 with the machining feed direction (X-axis direction). The position of the cutting unit 126 in the indexing direction (Y-axis direction) is adjusted so that the cutting tool 132 is disposed on the extension of the predetermined line 15. The height of the cutting unit 126 is adjusted so that the lower end of the cutting blade 132 is disposed below the upper surface of the belt 39. The difference in height between the upper surface of the resin layer 41 and the lower end of the cutting blade 132 at this time corresponds to the cutting depth of the cutting blade 132.
Then, the chuck table 122 is moved in the X-axis direction while rotating the cutting tool 132. Thereby, the chuck table 122 and the cutting tool 132 are relatively moved (machining feed) in the X-axis direction, and the cutting tool 132 cuts into the object 11, the pattern layer 35, and the resin layer 41 along the line to divide 15. As a result, the object 11, the pattern layer 35, and the resin layer 41 are divided along the lines to divide 15. Then, the same procedure is repeated to cut the workpiece 11, the pattern layer 35, and the resin layer 41 along all the planned dividing lines 15.
Fig. 11 (B) is a cross-sectional view showing a part of the workpiece 11 in which a cut (notch) 43 is formed inside the machining tank 29. Cuts 43 from the upper surface of the resin layer 41 to the lower surface of the pattern layer 35 are formed in a lattice shape along the lines to divide 15 in the cut workpiece 11, the pattern layer 35, and the resin layer 41. As a result, a plurality of device chips 45 each having the device 17 and the pattern layer 35 and the resin layer 41 are manufactured.
In the dividing step, the positional relationship between the chuck table 122 and the cutting blade 132 is adjusted so that the cutting blade 132 cuts into the inside of the machining groove 29 (between both ends in the width direction of the machining groove 29) corresponding to the region where the laminated body 13 is removed. Therefore, the cutting tool 132 cuts the workpiece 11 and the like without contacting the stacked body 13. This can prevent the film from peeling off from the laminate 13 due to the contact of the rotating cutter with the laminate 13, and can prevent damage to the device 17, peeling off of the resin layer 41, and the like.
Fig. 11 (C) is a cross-sectional view showing a part of the workpiece 11 in which the cut 43 is formed between the pair of processing grooves 29. When the pair of machining grooves 29 are formed in the workpiece 11 and the stacked body 13, the positional relationship between the chuck table 122 and the cutting tool 132 is adjusted so that the cutting tool 132 cuts into between the pair of machining grooves 29. This can prevent the film peeling of the laminate 13 from propagating to the region corresponding to the device 17.
A single piece of the resin layer 41 is attached to the device chip 45 obtained by dividing the workpiece 11 or the like. The device chip 45 is mounted on a mounting board or another device chip by the individual pieces of the resin layer 41. That is, a single piece of the resin layer 41 functions as an underfill material.
The workpiece 11, the pattern layer 35, and the resin layer 41 may be cut simultaneously with or separately from other layers. For example, the resin layer 41 may be cut by a 1 st cutting tool, and then the work 11 and the pattern layer 35 may be cut by a 2 nd cutting tool. In this case, the 1 st cutting tool and the 2 nd cutting tool may be the same cutting tool or different cutting tools.
Here, if resin layer 41 is formed before forming process groove 29, when laser beam 30 (see fig. 4 a) for forming process groove 29 is irradiated to laminate 13 through resin layer 41, resin layer 41 may be altered and cured by heat and debris generated by irradiation with laser beam 30, and flexibility of resin layer 41 may be lost. In this case, there is a fear that the individual pieces of the resin layer 41 are not easily deformed when the device chip 45 is mounted, and the connection electrode 19 of the device chip 45 and the electrode of the mounting target cannot be connected or the connection becomes incomplete.
However, in the present embodiment, after the step of forming the processed groove 29 by irradiation of the laser beam 30 (see fig. 4 a), the step of forming the resin layer 41 (see fig. 10) is performed. This can avoid the resin layer 41 from being altered by the irradiation of the laser beam, and can prevent the bonding failure of the device chip 45.
In the above, the mode of cutting and dividing the workpiece 11 and the like by the cutting tool 132 has been described, but the dividing method is not limited to the cutting process. For example, when the pattern layer 35 is not formed on the back surface 11b side of the workpiece 11, the workpiece 11 and the like may be divided by cutting or grinding.
Specifically, first, instead of forming the cut line 43, the workpiece 11 and the resin layer 41 are cut by the cutting tool 132 to form a cut groove along the line to divide 15. At this time, the depth of cut of the cutting tool 132 is adjusted so that the lower end of the cutting tool 132 is positioned below the front surface 11a and above the back surface 11b of the workpiece 11. As a result, a cut groove is formed along each planned dividing line 15 to cut the resin layer 41 and reach the inside of the workpiece 11.
Next, the back surface 11b side of the workpiece 11 is ground and thinned. For grinding the workpiece 11, for example, the grinding apparatus 100 (see fig. 7 a) is used. When the workpiece 11 is ground until the cut groove is exposed on the back surface 11b side of the workpiece 11, the workpiece 11 is divided into a plurality of device chips 45. As a result, the individual device chips 45 to which the resin layer 41 is attached are manufactured.
The formation of the cut groove may be performed before the formation of the resin layer 41. Specifically, the cutting process is first performed on the workpiece 11 (see fig. 4B) on which the processing groove 29 is formed, and a cutting groove reaching the inside of the workpiece 11 is formed along each planned dividing line 15. Next, the resin layer 41 is formed on the front surface 11a side of the workpiece 11 (see fig. 10). Then, the workpiece 11 is ground until the cut grooves are exposed on the back surface 11b side of the workpiece 11, and the workpiece 11 is divided into a plurality of device chips 45.
Next, the resin layer 41 is divided along the lines 15. In addition, there is no limitation on the method of dividing the resin layer 41, and the resin layer 41 is divided by, for example, cutting processing by a cutting tool or ablation processing by irradiation of a laser beam. As described later, the resin layer 41 may be divided by application of an external force due to expansion of the expansion sheet. As a result, the individual device chips 45 to which the resin layer 41 is attached are manufactured.
For example, in the dividing step, the workpiece 11 or the like may be divided by forming a division start point (start point of division) in the workpiece 11 and then applying an external force to the workpiece 11. A specific example of a method of dividing the workpiece 11 and the like by forming the division starting point and applying an external force will be described below.
First, after the dividing step, a sheet having extensibility (expansion sheet) is attached to the workpiece 11 (expansion sheet attaching step). For example, as the tape 39 (see fig. 9), an expansion sheet that can be expanded by application of an external force is used. In this case, the workpiece 11 is supported by the frame 37 via the expansion sheet. As the base material of the stretch sheet, a resin having high extensibility such as polyolefin or polyvinyl chloride is preferably used.
However, the expansion sheet may be a sheet different from the tape 39. For example, the tape 39 may be peeled off from the workpiece 11 before the dividing step, and the expansion sheet may be attached to the workpiece 11.
Next, a segmentation step is performed. In the dividing step, first, a laser beam is irradiated to the object 11, thereby forming a modified layer on the object 11 along the lines to divide 15 (modified layer forming step). Fig. 12 (a) is a cross-sectional view showing the workpiece 11 in the modified layer forming step.
In the modified layer forming step, the workpiece 11 is subjected to laser processing by the laser processing apparatus 140. The laser processing apparatus 140 has the same configuration as the laser processing apparatus 20 (see fig. 4 a). Specifically, the laser processing apparatus 140 includes a chuck table (holding table) 142, a plurality of jigs 144, and a laser irradiation unit 146. The chuck table 142 has a holding surface 142a for holding the workpiece 11, and the laser irradiation unit 146 has a laser oscillator (not shown) and a laser processing head 148. In the modified layer forming step, the laser processing apparatus 20 (see fig. 4 a) may be used.
In the modified layer forming step, the workpiece 11 is first held by the chuck table 142. Specifically, the workpiece 11 is disposed on the chuck table 142 such that the front surface 11a side (the laminate 13 side, the resin layer 41 side) faces the holding surface 142a and the rear surface 11b side (the belt 39 side) faces upward. The frame 37 is fixed by a plurality of clamps 144. When the suction force (negative pressure) of the suction source acts on the holding surface 142a in this state, the workpiece 11 is sucked and held by the chuck table 142 via the resin layer 41.
Further, a protective member for protecting the front surface of the resin layer 41 may be provided on the resin layer 41. In this case, the workpiece 11 is held by the chuck table 142 via the resin layer 41 and the protective member. This can avoid contact between the resin layer 41 and the holding surface 142a of the chuck table 142. The material of the protective member is the same as that of the support member 31 (see fig. 9).
Next, the chuck table 142 is rotated to align the longitudinal direction of the predetermined line to divide 15 with the machining feed direction (X-axis direction). The position of the chuck table 142 in the indexing direction (Y axis direction) is adjusted so that the region irradiated with the laser beam 150 coincides with the position of the Y axis direction of the inner region of the widthwise both ends of the planned dividing line 15 (for example, the center in the width direction of the machining groove 29). The position of the laser processing head 148 and the arrangement of the optical system are adjusted so that the focal point of the laser beam 150 is positioned at the same height position as the inside of the workpiece 11.
The chuck table 142 is moved in the machining feed direction (X-axis direction) while the laser beam 150 is irradiated from the laser machining head 148. Thereby, the chuck table 142 and the laser beam 150 are relatively moved in the machining feed direction (X-axis direction) at a predetermined speed (machining feed speed). As a result, the laser beam 150 is irradiated from the back surface 11b side of the workpiece 11 along the line to divide 15 with the focal point positioned inside the workpiece 11.
The irradiation conditions of the laser beam 150 are set so that the region of the workpiece 11 irradiated with the laser beam 150 is modified by multiphoton absorption to change its quality. Specifically, the wavelength of the laser beam 150 is set so that at least a part of the laser beam 150 transmits through the workpiece 11. That is, the laser beam 150 is a laser beam having a wavelength that is transparent to the workpiece 11. The irradiation conditions of the other laser beams 150 are also set so as to appropriately modify the workpiece 11. For example, when the workpiece 11 is a silicon wafer, the irradiation conditions of the laser beam 150 are set as follows.
Wavelength: 1064nm
Average output: 1W
Repetition frequency: 100kHz
Processing feed speed: 800mm/s
When the laser beam 150 is irradiated to the workpiece 11, the inside of the workpiece 11 is modified and altered by multiphoton absorption, and a modified layer (altered layer) 47 is formed inside the workpiece 11 along the lines to divide 15 and the processing groove 29. Then, by repeating the same process, the laser beam 150 is irradiated along the other planned dividing lines 15 and the machining grooves 29. As a result, the modified layer 47 is formed in a lattice shape inside the workpiece 11.
The modified layer 47 may be formed in a plurality of layers in the thickness direction of the workpiece 11. For example, when the workpiece 11 is a silicon wafer or the like having a thickness of 200 μm or more, the workpiece 11 can be easily divided appropriately by forming 2 or more modified layers 47. When forming the plurality of modified layers 47, the laser beam 150 is irradiated along each line to divide 15 a plurality of times while changing the converging point of the laser beam 150 in the thickness direction of the workpiece 11.
Fig. 12 (B) is a cross-sectional view showing a part of the workpiece 11 after the modified layer forming step. The modified layer 47 is formed along the lines to divide 15 and the processing groove 29 in a region where the laser beam 150 (see fig. 12 a) is converged in the workpiece 11 or in the vicinity thereof. When the modified layer 47 is formed, a crack 49 is generated in the modified layer 47, and the crack 49 progresses from the modified layer 47 to the front surface 11a and the back surface 11b of the workpiece 11.
The region of the workpiece 11 where the modified layer 47 and the cracks 49 are formed is more fragile than the other regions of the workpiece 11. Therefore, when an external force is applied to the workpiece 11, the workpiece 11 is divided along the lines to divide 15 and the processing grooves 29, starting from the modified layer 47 and the cracks 49. That is, the modified layer 47 and the crack 49 function as a division start point.
However, depending on the irradiation conditions of the laser beam 150, the thickness of the workpiece 11, and the like, the crack 49 may reach the front surface 11a and the back surface 11b of the workpiece 11. In this case, the object 11 is divided along the lines to divide 15 in the modified layer forming step.
Next, the tape 39 (extension sheet) is extended (extension step). Fig. 13 (a) is a cross-sectional view showing the workpiece 11 in the expanding step.
In the expanding step, the tape 39 is expanded by pulling the tape 39 radially outward. Thereby, an external force is applied to the workpiece 11, the pattern layer 35, and the resin layer 41, and the workpiece 11, the pattern layer 35, and the resin layer 41 are cut along the lines to divide 15.
The expansion of the tape 39 may be performed manually by an operator or automatically using a dedicated expansion device. Fig. 13 (a) shows an example in which the belt 39 is expanded by the expanding device 160.
The expanding device 160 has a drum 162 formed in a hollow cylindrical shape. A plurality of rollers 164 are arranged along the circumferential direction of the drum 162 at the upper end portion of the drum 162. Further, a plurality of columnar support members 166 are disposed outside the drum 162. An air cylinder (not shown) for vertically moving (raising and lowering) the support member 166 is connected to the lower end of the support member 166.
An annular table 168 is fixed to the upper end portions of the plurality of support members 166. A circular opening penetrating the table 168 in the thickness direction is provided in the center of the table 168. In addition, the diameter of the opening of the table 168 is larger than the diameter of the drum 162, and the upper end portion of the drum 162 can be inserted into the opening of the table 168. Further, a plurality of jigs 170 that hold and fix the frame 37 are disposed on the outer peripheral portion of the table 168.
When dividing the workpiece 11, the support member 166 is first moved by an air cylinder (not shown) to place the upper end of the roller 164 at substantially the same height as the upper surface of the table 168. Further, a frame 37 is disposed on the table 168, and the frame 37 is fixed by a plurality of jigs 170. At this time, the workpiece 11 is disposed so as to overlap an area inside the drum 162.
Subsequently, the support member 166 is lowered by an air cylinder (not shown) to pull down the table 168. Thereby, the belt 39 is pulled radially outward while being supported by the roller 164. As a result, the band 39 is radially expanded.
Fig. 13 (B) is a cross-sectional view showing a part of the workpiece 11 after the expanding step. When the tape 39 is spread, an external force is applied to the workpiece 11 to which the tape 39 is attached. As a result, the modified layer 47 or the crack 49 (see fig. 12B) functions as a division start point, and the workpiece 11 is divided along the line to divide 15. The pattern layer 35 and the resin layer 41 formed on the workpiece 11 are also divided along the lines to divide 15 together with the workpiece 11.
In addition, the region of the laminate 13 that overlaps the modified layer 47 is removed in the groove forming step (see fig. 4a and 4B). Therefore, when the workpiece 11 is divided, the thin films included in the laminate 13 are less likely to be peeled off due to the fracture of the laminate 13, and damage to the device 17 can be prevented.
When the object to be processed 11 or the like is divided along the lines to divide 15, a plurality of device chips 45 in which the devices 17 are individually sealed by the resin layer 41 are manufactured. Further, a gap is formed between the device chips 45 by the expansion of the tape 39. Then, the device chip 45 is peeled off from the tape 39 and picked up, and mounted on a mounting board or another device chip.
When the crack 49 (see fig. 12B) reaches the front surface 11a and the back surface 11B of the workpiece 11 during the formation of the modified layer 47, the workpiece 11 is already divided along the lines to divide 15 before the propagation step is performed. In this case, the resin layer 41 is broken along the lines to divide 15 by the expansion of the tape 39, and a gap is formed between the device chips 45.
As described above, in the method for manufacturing a device chip according to the present embodiment, the processing grooves 29 for cutting the stacked body 13 are formed along the lines to divide 15 before the object 11 is divided. This can avoid peeling of the laminate 13 when the workpiece 11 is divided, and prevent damage to the device 17 and peeling of the resin layer 41.
In the method for manufacturing a device chip according to the present embodiment, after the processing grooves 29 for cutting the laminated body 13 are formed along the lines to divide 15 by irradiation with the laser beam 30, the resin layer 41 is formed on the front surface 11a side of the workpiece 11. This can prevent the resin layer 41 from being altered by the laser beam 30 for forming the processed groove 29 being irradiated to the resin layer 41, and can prevent a bonding failure when the device chip 45 is mounted by singulating the resin layer 41.
In the method for manufacturing a device chip according to the present embodiment, machining groove 29 is formed by irradiation with laser beam 30 before workpiece 11 is reduced in rigidity by grinding and thinning workpiece 11. Thus, when laser processing for forming the processing groove 29 is performed, deformation (bending) and breakage of the workpiece 11 are not easily generated, and the workpiece 11 can be easily handled.
The structure, method, and the like of the above embodiments may be modified and implemented as appropriate without departing from the scope of the object of the present invention.

Claims (7)

1. A method of manufacturing a device chip by dividing a workpiece having a multilayer body constituting a device provided in a plurality of regions defined by a plurality of intersecting planned dividing lines on a front surface side thereof to manufacture the device chip,
the manufacturing method of the device chip comprises the following steps:
a processing groove forming step of irradiating a laser beam having a wavelength that is absorptive for the laminate along the planned dividing lines from the front surface side of the object to be processed, and forming processing grooves that divide the laminate along the planned dividing lines;
a resin layer forming step of forming a resin layer on the front side of the workpiece after the machining groove forming step; and
and a dividing step of dividing the object and the resin layer along the lines to be divided after the resin layer forming step.
2. A method of manufacturing a device chip by dividing a workpiece having a multilayer body constituting a device provided in a plurality of regions defined by a plurality of intersecting planned dividing lines on a front surface side thereof to manufacture the device chip,
the manufacturing method of the device chip comprises the following steps:
a processing groove forming step of irradiating a laser beam having a wavelength that is absorptive for the laminate along the planned dividing lines from the front surface side of the object to be processed, and forming processing grooves that divide the laminate along the planned dividing lines;
a support member fixing step of fixing a support member on the front surface side of the workpiece after the machining groove forming step;
a back grinding step of grinding the back side of the workpiece after the support member fixing step;
a support member removing step of removing the support member from the front surface side of the workpiece after the back surface grinding step;
a resin layer forming step of forming a resin layer on the front side of the workpiece after the support member removing step; and
and a dividing step of dividing the object and the resin layer along the dividing lines after the resin layer forming step.
3. The method of manufacturing a device chip as claimed in claim 2,
the manufacturing method of the device chip further comprises the following back pattern forming step: after the back grinding step, a pattern is formed on the back side of the workpiece.
4. The method of manufacturing a device chip according to any one of claims 1 to 3,
the manufacturing method of the device chip further comprises the following protective film forming steps: before the processing groove forming step, a protective film is formed on the front side of the object to be processed.
5. The method of manufacturing a device chip according to any one of claims 1 to 4,
the manufacturing method of the device chip also comprises the following plasma etching steps: after the step of forming the processing groove, an etching gas in a plasma state is supplied from the front side of the object to be processed to remove processing strain or foreign matter remaining in the object to be processed or the stacked body.
6. The method of manufacturing a device chip according to any one of claims 1 to 5,
in the dividing step, the object and the resin layer are cut along the planned dividing lines by a cutting tool.
7. The method of manufacturing a device chip according to any one of claims 1 to 5,
the manufacturing method of the device chip also comprises the following steps of adhering the expansion sheet: before the dividing step, an extensible extension sheet is attached to the workpiece,
the dividing step comprises the following steps:
a modified layer forming step of positioning a converging point of a laser beam having a wavelength that is transparent to the workpiece inside the workpiece and irradiating the laser beam, thereby forming a modified layer along the planned dividing line in the workpiece; and
an expanding step of expanding the expanded sheet after the modified layer forming step.
CN202211189890.6A 2021-10-07 2022-09-28 Method for manufacturing device chip Pending CN115954325A (en)

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