CN115951192B - Junction temperature detection device, method and medium of power device - Google Patents

Junction temperature detection device, method and medium of power device Download PDF

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CN115951192B
CN115951192B CN202310219095.5A CN202310219095A CN115951192B CN 115951192 B CN115951192 B CN 115951192B CN 202310219095 A CN202310219095 A CN 202310219095A CN 115951192 B CN115951192 B CN 115951192B
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power
power device
junction temperature
voltage
capacitor
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CN115951192A (en
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王俊
胡波
柯子鹏
贺敏敏
张在平
刘朝发
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Changsha Danfenrui Electrical Technology Co ltd
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Changsha Danfenrui Electrical Technology Co ltd
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Abstract

The invention discloses a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium for a power device, and relates to the field of junction temperature detection. The method has the advantages of high response speed, small error, no damage to the power device and the outer package thereof, and capability of detecting the junction temperature of the current power device in real time, namely detecting the degradation trend of the power device in real time, improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.

Description

Junction temperature detection device, method and medium of power device
Technical Field
The present invention relates to the field of junction temperature detection, and in particular, to a junction temperature detection device, a junction temperature detection method, and a junction temperature detection medium for a power device.
Background
Power devices, such as MOS transistors, are at the heart of modern power electronic converters, which play a very important role in the reliability, cost and performance of the device. However, the power device can be degraded in continuous operation, if the degradation trend of the power device cannot be accurately detected, the failure fault condition of the power device cannot be accurately judged, so that a reliable method is needed to detect the degradation trend of the power device in real time.
In the prior art, because junction temperature is an important parameter of a power device, the degradation trend and failure fault condition of the power device during service are closely related to junction temperature fluctuation and junction temperature amplitude in the power device in the running process, and the degradation trend of the power device is mainly reflected by adopting a mode of detecting the junction temperature of the power device in the prior art. In the prior art, three methods for measuring junction temperature of a power device are mainly adopted: the first is a physical contact method, which directly measures the temperature by using a thermistor or other heat-sensitive sensor placed inside the power device, but the junction temperature error obtained by the method is larger because the response speed of the heat-sensitive sensor is slower, and the damage of the power device can be directly caused by the purpose of realizing on-line monitoring; the second is an optical method, the method can image the temperature field on the surface of the object through the thermal infrared sensitive charged coupling device, but the method needs to open the shell of the power device and mount the thermal infrared sensitive charged coupling device in, on one hand, the pressure resistance, the current resistance and other characteristics of the power device are possibly influenced, on the other hand, the outer package of the power device needs to be destroyed, and the method is difficult to be practically applied; the third is a thermal model method, which uses the thermal parameters such as the thermal resistance which are known at present to input into a thermal resistance network model to calculate the internal junction temperature change through fitting calculation, however, the thermal parameters such as the thermal resistance can also change along with the degradation of the device in the actual application of the device, and the calculated junction temperature error is larger and larger.
Disclosure of Invention
The invention aims to provide a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium for a power device, wherein the junction temperature of the power device can influence the delay on time of the power device, the delay on time of the power device can influence the charging time of a capacitor, and the charging time of the capacitor can influence a voltage peak value in the capacitor charging process, so the junction temperature detection device for the power device indirectly obtains the junction temperature of the power device through determining the voltage peak value in the capacitor charging process and the voltage peak value. The method has the advantages of high response speed, small error, no damage to the power device and the outer package thereof, and capability of detecting the junction temperature of the current power device in real time, namely detecting the degradation trend of the power device in real time, improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.
In order to solve the technical problems, the present invention provides a junction temperature detection device of a power device, including: the device comprises a first voltage acquisition module, a charging module, a discharging module and a capacitor;
the first input end of the first voltage acquisition module is connected with the first end of the power device, the second input end of the first voltage acquisition module is connected with the second end of the power device and is used for measuring the voltage between the first end and the second end of the power device, and the control end of the power device is connected with a PWM signal; the power device is completely turned on after a delay on time when the PWM signal is at a first level, and turned off when the PWM signal is at a second level, wherein the first level is opposite to the second level;
the first end of the charging module is connected with the first end of the capacitor, the second end of the charging module is connected with a first power supply, and the control end of the charging module is connected with the PWM signal and is used for controlling the first power supply to charge the capacitor in the time delay conduction time when the PWM signal is of a first level;
the second end of the capacitor is grounded;
the control end of the discharging module is connected with the output end of the voltage acquisition module, and the discharging end is connected with the first end of the capacitor and used for controlling the capacitor to discharge when the voltage when the power device is completely conducted is received.
Preferably, the power device is an N-type MOS transistor, a gate of the N-type MOS transistor is used as a control end of the power device, a drain of the N-type MOS transistor is used as a first end of the power device, and a source of the N-type MOS transistor is used as a second end of the power device.
Preferably, the discharging module includes: a comparator, a first power electronics and a first resistor;
the positive phase input end of the comparator is connected with a second power supply, the negative phase input end of the comparator is connected with the output end of the voltage acquisition module, the output end of the comparator is connected with the control end of the first power electronic device and is used for controlling the first power electronic device to be conducted when the negative phase input end receives the voltage when the power device is completely conducted, and the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device when in delayed conduction is not less than the voltage of the second power supply;
the first end of the first power electronic device is connected with the capacitor, and the second end of the first power electronic device is connected with the first end of the first resistor;
the second end of the first resistor is connected with ground.
Preferably, the first power electronic device is a first triode, a base electrode of the first triode is used as a control end of the first power electronic device, an emitter electrode of the first triode is used as a first end of the first power electronic device, and a collector electrode of the first triode is used as a second end of the first power electronic device.
Preferably, the charging module includes: a second power electronic device and a second resistor;
the first end of the second power electronic device is connected with the first end of the second resistor, the second end of the second power electronic device is connected with the first power supply, and the control end is connected with a PWM signal which is used for controlling the first power supply to charge the capacitor in the time delay conduction time and is of a first level;
the second end of the second resistor is connected with the capacitor.
Preferably, the second power electronic device is a second triode, the base electrode of the second triode is used as the control end of the second power electronic device, the collector electrode of the second triode is used as the first end of the second power electronic device, and the emitter electrode of the second triode is used as the second end of the second power electronic device.
Preferably, the discharging module further comprises:
and the first end of the third resistor is connected with the output end of the comparator, and the second end of the third resistor is connected with the control end of the first power electronic device.
Preferably, the method further comprises:
the input end of the second voltage acquisition module is connected with the first end of the capacitor and is used for acquiring the voltage of the capacitor in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the capacitor charging process and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value of the capacitor and the junction temperature of the power device.
In order to solve the technical problem, the invention also provides a junction temperature detection method of the power device, which is based on the junction temperature detection device of the power device, and comprises the following steps:
determining a voltage peak value in the capacitor charging process;
and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
In order to solve the technical problem, the invention also provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program realizes the steps of the junction temperature detection method of the power device when being executed by a processor.
The invention aims to provide a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium for a power device, wherein the junction temperature of the power device can influence the delay on time of the power device, the delay on time of the power device can influence the charging time of a capacitor, and the charging time of the capacitor can influence a voltage peak value in the capacitor charging process, so the junction temperature detection device for the power device indirectly obtains the junction temperature of the power device through determining the voltage peak value in the capacitor charging process and the voltage peak value. The method has the advantages of high response speed, small error, no damage to the power device and the outer package thereof, and capability of detecting the junction temperature of the current power device in real time, namely detecting the degradation trend of the power device in real time, improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the prior art and the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a junction temperature detecting device of a power device according to the present invention;
FIG. 2 is a graph showing the relationship among PWM signals, the starting voltage of a power device, the voltage of a first voltage acquisition module, the voltage received by a discharge module and the capacitance voltage;
FIG. 3 is a graph of voltage versus time for a first voltage acquisition module according to the present invention;
fig. 4 is a schematic structural diagram of another junction temperature detecting device of a power device according to the present invention;
FIG. 5a is a graph showing the relationship between capacitance voltage and time at different temperatures according to the present invention;
FIG. 5b is a graph showing the peak capacitance voltage versus temperature provided by the present invention;
fig. 6 is a process flow chart of a junction temperature detection method of a power device provided by the invention.
Detailed Description
The invention provides a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium for a power device, wherein the junction temperature of the power device can influence the delay on time of the power device, the delay on time of the power device can influence the charging time of a capacitor, and the charging time of the capacitor can influence a voltage peak value in the capacitor charging process, so the junction temperature detection device for the power device indirectly obtains the junction temperature of the power device through determining the voltage peak value in the capacitor charging process and the voltage peak value. The method has the advantages of high response speed, small error, no damage to the power device and the outer package thereof, and capability of detecting the junction temperature of the current power device in real time, namely detecting the degradation trend of the power device in real time, improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a junction temperature detecting device of a power device according to the present invention. The device comprises: the device comprises a first voltage acquisition module 1, a charging module 2, a discharging module 3 and a capacitor 4;
the first input end of the first voltage acquisition module 1 is connected with the first end of the power device, the second input end of the first voltage acquisition module is connected with the second end of the power device and is used for measuring the voltage between the first end and the second end of the power device, and the control end of the power device is connected with a PWM signal; the power device is completely turned on after a delay on time when the PWM signal is at a first level, and turned off when the PWM signal is at a second level, wherein the first level is opposite to the second level;
the first end of the charging module 2 is connected with the first end of the capacitor 4, the second end of the charging module is connected with a first power supply, and the control end of the charging module is connected with a PWM signal, and is used for controlling the first power supply to charge the capacitor 4 when the PWM signal is of a first level and in a delayed conduction time;
the second end of the capacitor 4 is grounded;
the control end of the discharging module 3 is connected with the output end of the voltage acquisition module, and the discharging end is connected with the first end of the capacitor 4 and used for controlling the capacitor 4 to discharge when receiving the voltage when the power device is completely conducted.
In the invention, the first voltage acquisition module 1 is mainly used for measuring the voltage at two ends of the power device. The control end of the power device is connected to the PWM signal and is turned on and off under the control of the PWM signal, when the level of the PWM signal is changed from the second level to the first level, the power device starts to be turned on, as shown in fig. 2, but since a certain on time is required for the complete conduction of the power device, the voltage measured by the first voltage acquisition module 1 is a high level during the period from the start of the conduction of the power device to the complete conduction.
Because the PWM signal is at the first level during the period from when the power device starts to turn on to when the power device turns on, and the control terminal of the charging module 2 is connected to the PWM signal, the charging module 2 is turned on and controls the first power supply to charge the capacitor 4 during the period from when the power device starts to turn on to when the power device turns on. Since the power device is not fully turned on during the period from the start of the power device to the full conduction, the discharge module 3 is turned off at this time. When the power device is completely conducted, the charging module 2 is closed, the discharging module 3 is opened, and the discharging module 3 discharges the capacitor 4. Therefore, the junction temperature detection device of the whole power device can obtain a voltage peak value formed after the voltage of the capacitor 4 is charged and discharged, and the junction temperature of the current power device can be determined by determining the voltage peak value in the charging process of the capacitor 4 and the corresponding relation between the voltage peak value and the junction temperature of the power device because the junction temperature of the power device can influence the delay on time of the power device and the charging time of the electric charge and the charging time of the capacitor 4 can be influenced by the delay on time of the power device and the charging time of the capacitor 4. The method has the advantages of high response speed, small error and easy application in practice, and can detect the junction temperature of the current power device in real time, namely detect the degradation trend of the power device in real time, improve the reliability of the power device in the use process and ensure the safety of the power device in the use process.
In practical application, the power device may be an N-type MOS transistor or other power devices.
It should be noted that if the power device is an N-type MOS transistor, the second level is a negative level, and the first level is a positive level.
It should be noted that, the turn-on delay time of the power device is related to the junction temperature of the power device, and the higher the junction temperature is, the shorter the turn-on process of the power device is. As shown in fig. 3, the junction temperature mainly includes: the conduction delay time of the power device is shortest when the junction temperature is 150 ℃ at 150 ℃, 125 ℃, 100 ℃, 75 ℃, 50 ℃ and 25 ℃; when the junction temperature is 25 ℃, the conduction delay time of the power device is longest.
The invention provides a junction temperature detection device of a power device, which is characterized in that the junction temperature of the power device can influence the time delay on time of the power device, the time delay on time of the power device can influence the charging time of a capacitor 4, and the charging time of the capacitor 4 can influence a voltage peak value in the charging process of the capacitor 4, so that the junction temperature detection device of the power device indirectly obtains the junction temperature of the power device through determining the voltage peak value in the charging process of the capacitor 4 and through the voltage peak value. The method has the advantages of high response speed, small error, no damage to the power device and the outer package thereof, and capability of detecting the junction temperature of the current power device in real time, namely detecting the degradation trend of the power device in real time, improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.
Based on the above embodiments:
referring to fig. 4, fig. 4 is a schematic structural diagram of another junction temperature detecting device of a power device according to the present invention.
As a preferred embodiment, the power device is an N-type MOS tube, the grid electrode of the N-type MOS tube is used as the control end of the power device, the drain electrode of the N-type MOS tube is used as the first end of the power device, and the source electrode of the N-type MOS tube is used as the second end of the power device.
In the invention, the detected power device is an N-type MOS tube, so the first voltage acquisition module 1 is mainly used for measuring the voltages at two ends of the drain electrode and the source electrode of the N-type MOS tube. The control end of the N-type MOS tube is connected with a PWM signal, when the level of the PWM signal is a first level, the N-type MOS tube starts to be conducted and is completely conducted after a period of time, of course, the first level is larger than the starting voltage (gate source voltage) of the N-type MOS tube, and the advantage of adopting the N-type MOS tube is mainly that the response speed is high, and the time required by complete conduction is obviously influenced by junction temperature.
As a preferred embodiment, the discharge module 3 comprises: a comparator 5, a first power electronics 6 and a first resistor 7;
the positive phase input end of the comparator 5 is connected with the second power supply, the negative phase input end is connected with the output end of the voltage acquisition module, the output end is connected with the control end of the first power electronic device 6, and the negative phase input end is used for controlling the first power electronic device 6 to be conducted when the negative phase input end receives the voltage when the power device is completely conducted, and the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device in the delayed conduction is not smaller than the voltage of the second power supply;
the first power electronic device 6 has a first end connected to the capacitor 4 and a second end connected to a first end of the first resistor 7;
the second terminal of the first resistor 7 is connected to ground.
In the present invention, the discharge module 3 includes: a comparator 5, a first power electronics 6 and a first resistor 7; the working principle of the comparator 5 is that a high level is output when the voltage at the positive input of the comparator 5 is greater than the voltage at the negative input of the comparator 5, and a low level is output when the voltage at the positive input of the comparator 5 is lower than the voltage at the negative input of the comparator 5. So when the voltage received by the negative phase input end is the voltage when the power device starts to be conducted to the full conduction period, the voltage of the positive input end of the comparator 5 (the voltage of the second power supply) is lower than the voltage of the negative input end of the comparator 5, the output end of the comparator 5 outputs a low level, and the first power electronic device 6 is controlled to be turned off, and the capacitor 4 is not discharged at the moment; when the voltage received by the negative phase input terminal is the voltage when the power device is fully turned on, the voltage of the positive input terminal of the comparator 5 (the voltage of the second power supply) is higher than the voltage of the negative input terminal of the comparator 5, the output terminal of the comparator 5 outputs a high level, and controls the first power electronic device 6 to be turned on, and the capacitor 4 is discharged at this time. The capacitor 4 can be rapidly discharged, and the detection efficiency is improved.
In practical applications, the first power electronic device 6 may be a first triode or other power electronic device.
As a preferred embodiment, the first power electronic device 6 is a first triode, the base of the first triode being the control terminal of the first power electronic device 6, the emitter of the first triode being the first terminal of the first power electronic device 6, and the collector of the first triode being the second terminal of the first power electronic device 6.
In the invention, the adopted first power electronic device 6 is a first triode, so that the price is low and the cost is reduced.
As a preferred embodiment, the charging module 2 includes: a second power electronic device 8 and a second resistor 9;
the first end of the second power electronic device 8 is connected with the first end of the second resistor 9, the second end of the second power electronic device 8 is connected with the first power supply, the control end is connected with a PWM signal, and the PWM signal is used for controlling the first power supply to charge the capacitor 4 within the time delay conduction time;
a second terminal of the second resistor 9 is connected to the capacitor 4.
In the present invention, the charging module 2 includes: a second power electronic device 8 and a second resistor 9; the control terminal of the second power electronic device 8 is connected to the PWM signal, so when the PWM signal is at the first level and the power device is in a period from start to complete conduction, the second power electronic device 8 is turned on, and at this time, the second power electronic device 8 controls the first power supply to charge the capacitor 4; when the power device is fully on the second power electronics 8 is turned off and the first power supply no longer charges the capacitor 4. The capacitor 4 can be rapidly discharged, and the detection efficiency is improved.
In practical applications, the second power electronic device 8 may be a second triode or other power electronic device.
As a preferred embodiment, the second power electronic device 8 is a second triode, the base of the second triode being the control terminal of the second power electronic device 8, the collector of the second triode being the first terminal of the second power electronic device 8, the emitter of the second triode being the second terminal of the second power electronic device 8.
In the invention, the adopted second power electronic device 8 is a second triode, so that the price is low and the cost is reduced.
As a preferred embodiment, the discharge module further comprises:
and a first end of the third resistor 10 is connected with the output end of the comparator 5, and a second end of the third resistor 10 is connected with the control end of the first power electronic device 6.
In the invention, the discharging module further comprises a third resistor 10, and the third resistor 10 is arranged between the output end of the comparator 5 and the control end of the first power electronic device 6, thereby playing a role in current limiting and improving the reliability of the junction temperature detection device.
As a preferred embodiment, further comprising:
the input end of the second voltage acquisition module is connected with the first end of the capacitor 4 and is used for acquiring the voltage of the capacitor 4 in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the charging process of the capacitor 4 and determining the junction temperature of the power device according to the corresponding relation between the voltage peak value of the capacitor 4 and the junction temperature of the power device.
In the invention, the junction temperature detection device further comprises a second voltage acquisition module and a processor, wherein the second voltage acquisition module is used for acquiring the voltage of the capacitor 4 in the charging and discharging processes, and the processor is used for analyzing the voltage acquired by the second voltage acquisition module to obtain a voltage peak value of the capacitor 4 in the charging process, because the junction temperature of the power device can influence the delay conduction time of the power device, the delay conduction time of the power device can influence the charging time of the capacitor 4, and the charging time of the capacitor 4 can influence the voltage peak value of the capacitor 4 in the charging process. Therefore, after the voltage peak value in the charging process of the capacitor 4 is determined, the processor can determine the junction temperature of the current power device through the corresponding relation between the voltage peak value and the junction temperature of the power device. The method has the advantages of high response speed and small error, is easy to apply in practice, and can detect the junction temperature of the current power device in real time, namely detect the degradation trend of the power device in real time, thereby improving the reliability of the power device in the use process and ensuring the safety of the power device in the use process.
It should be noted that, the relationship between the voltage and time of the capacitor 4 in the charging and discharging processes is shown in fig. 5a and 5b, wherein fig. 5a is a graph of the relationship between the voltage and time of the capacitor at different temperatures provided by the present invention; FIG. 5b is a graph showing the relationship between the peak voltage and the temperature of the capacitor according to the present invention.
Referring to fig. 6, fig. 6 is a process flow chart of a junction temperature detection method of a power device according to the present invention. The junction temperature detection device based on the power device comprises the following steps:
s11, determining a voltage peak value in the capacitor charging process;
and S12, determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
In the invention, because the junction temperature of the power device can influence the time delay on time of the power device, the time delay on time of the power device can influence the charging time of the capacitor 4, and the charging time of the capacitor 4 can influence the voltage peak value in the charging process of the capacitor 4. Therefore, the junction temperature detection method of the power device can determine the junction temperature of the current power device by determining the voltage peak value in the charging process of the capacitor 4 and the corresponding relation between the voltage peak value and the junction temperature of the power device. The method has the advantages of high response speed, small error and easy application in practice, and can detect the junction temperature of the current power device in real time, namely detect the degradation trend of the power device in real time, improve the reliability of the power device in the use process and ensure the safety of the power device in the use process.
The junction temperature detection method of the power device provided in this embodiment corresponds to the above device, and therefore has the same beneficial effects as the above device, so the embodiments of the junction temperature detection method portion of the power device are described in the embodiments of the device portion, and are not repeated here.
The invention also provides a corresponding embodiment of a computer readable storage medium, wherein the computer readable storage medium is stored with a computer program, and the steps of the junction temperature detection method of the power device are realized when the computer program is executed by a processor.
The computer readable storage medium provided in this embodiment corresponds to the above device, and therefore has the same beneficial effects as the above device, so the embodiments of the computer readable storage medium portion are referred to the description of the embodiments of the device portion, and are not repeated herein.
The invention also provides a corresponding embodiment of a computer readable storage medium, wherein the computer readable storage medium is stored with a computer program, and the steps of the junction temperature detection method of the power device are realized when the computer program is executed by a processor.
The computer readable storage medium provided in this embodiment corresponds to the above device, and therefore has the same beneficial effects as the above device, so the embodiments of the computer readable storage medium portion are referred to the description of the embodiments of the device portion, and are not repeated herein.
It should be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A junction temperature detection apparatus for a power device, comprising: the device comprises a first voltage acquisition module, a charging module, a discharging module and a capacitor;
the first input end of the first voltage acquisition module is connected with the first end of the power device, the second input end of the first voltage acquisition module is connected with the second end of the power device and is used for measuring the voltage between the first end and the second end of the power device, and the control end of the power device is connected with a PWM signal; the power device is completely turned on after a delay on time when the PWM signal is at a first level, and turned off when the PWM signal is at a second level, wherein the first level is opposite to the second level;
the first end of the charging module is connected with the first end of the capacitor, the second end of the charging module is connected with a first power supply, and the control end of the charging module is connected with the PWM signal and is used for controlling the first power supply to charge the capacitor in the time delay conduction time when the PWM signal is of a first level;
the second end of the capacitor is grounded;
the control end of the discharging module is connected with the output end of the voltage acquisition module, and the discharging end is connected with the first end of the capacitor and used for controlling the capacitor to discharge when the voltage when the power device is completely conducted is received.
2. The junction temperature detection device for a power device according to claim 1, wherein the power device is an N-type MOS transistor, a gate of the N-type MOS transistor is used as a control terminal of the power device, a drain of the N-type MOS transistor is used as a first terminal of the power device, and a source of the N-type MOS transistor is used as a second terminal of the power device.
3. The junction temperature detection apparatus of a power device according to claim 1, wherein the discharging module includes: a comparator, a first power electronics and a first resistor;
the positive phase input end of the comparator is connected with a second power supply, the negative phase input end of the comparator is connected with the output end of the voltage acquisition module, the output end of the comparator is connected with the control end of the first power electronic device and is used for controlling the first power electronic device to be conducted when the negative phase input end receives the voltage when the power device is completely conducted, and the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device when in delayed conduction is not less than the voltage of the second power supply;
the first end of the first power electronic device is connected with the capacitor, and the second end of the first power electronic device is connected with the first end of the first resistor;
the second end of the first resistor is connected with ground.
4. The junction temperature detection apparatus of claim 3, wherein said first power electronic device is a first triode, a base of said first triode is a control terminal of said first power electronic device, an emitter of said first triode is a first terminal of said first power electronic device, and a collector of said first triode is a second terminal of said first power electronic device.
5. The junction temperature detection apparatus of a power device according to claim 3, wherein the charging module includes: a second power electronic device and a second resistor;
the first end of the second power electronic device is connected with the first end of the second resistor, the second end of the second power electronic device is connected with the first power supply, and the control end is connected with a PWM signal which is used for controlling the first power supply to charge the capacitor in the time delay conduction time and is of a first level;
the second end of the second resistor is connected with the capacitor.
6. The junction temperature detection apparatus of claim 5, wherein said second power electronic device is a second triode, a base of said second triode is a control terminal of said second power electronic device, a collector of said second triode is a first terminal of said second power electronic device, and an emitter of said second triode is a second terminal of said second power electronic device.
7. The junction temperature detection apparatus of a power device according to claim 3, wherein the discharge module further comprises:
and the first end of the third resistor is connected with the output end of the comparator, and the second end of the third resistor is connected with the control end of the first power electronic device.
8. The junction temperature detection apparatus for a power device according to any one of claims 1 to 7, further comprising:
the input end of the second voltage acquisition module is connected with the first end of the capacitor and is used for acquiring the voltage of the capacitor in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the capacitor charging process and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value of the capacitor and the junction temperature of the power device.
9. A junction temperature detection method of a power device, characterized in that the method comprises:
determining a voltage peak value in the capacitor charging process;
and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
10. A computer readable storage medium, characterized in that the computer readable storage medium has stored thereon a computer program which, when executed by a processor, implements the steps of the junction temperature detection method of a power device according to claim 9.
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Publication number Priority date Publication date Assignee Title
CN117741388B (en) * 2024-02-19 2024-05-28 合肥安赛思半导体有限公司 SiC MOSFET junction temperature monitoring circuit and method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345512A (en) * 2008-07-08 2009-01-14 无锡友达电子有限公司 Method for over-temperature protection through monitoring power tube junction temperature by collecting anode penetration current
CN104634466A (en) * 2013-11-14 2015-05-20 北京华峰测控技术有限公司 Junction temperature simulation circuit for semiconductor power devices
DE102016215008A1 (en) * 2016-08-11 2018-02-15 Siemens Aktiengesellschaft Method for operating a converter and thereafter operating converter
CN111220891A (en) * 2020-03-04 2020-06-02 楚天龙股份有限公司 IGBT junction temperature measuring method and measuring device
CN111983415A (en) * 2020-08-20 2020-11-24 湖南大学 Power device junction temperature on-line measuring system
CN112953363A (en) * 2021-04-09 2021-06-11 南京理工大学 Active heat control method of light storage direct current micro-grid system
CN113589126A (en) * 2021-07-30 2021-11-02 奇舍电子科技(上海)有限公司 Transient time measuring device, junction temperature measuring system and method of power electronic device
CN114839499A (en) * 2022-03-02 2022-08-02 西安电子科技大学 Power device junction temperature on-line monitoring system based on dynamic threshold voltage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7839201B2 (en) * 2005-04-01 2010-11-23 Raytheon Company Integrated smart power switch
CN105556266B (en) * 2013-09-24 2017-10-24 Abb 技术有限公司 For the method and apparatus for the virtual junction temperature for determining IGBT device
CN104090224B (en) * 2014-07-18 2016-10-05 浙江大学 The on-line detecting system of a kind of power diode module working junction temperature and detection method
CN104635806B (en) * 2015-01-14 2017-04-12 重庆大学 Power device junction temperature control circuit and active thermal management method
EP3546964A1 (en) * 2018-03-30 2019-10-02 Mitsubishi Electric R & D Centre Europe B.V. A method for monitoring a multi-die power module
CN111767634B (en) * 2020-05-19 2022-09-27 中国人民解放军海军工程大学 Method for establishing IGBT switch transient model
CN113064042B (en) * 2021-02-01 2022-02-08 北京交通大学 Junction temperature extraction method of power semiconductor device
CN114217201B (en) * 2021-12-15 2022-10-18 中南大学 IGBT (insulated Gate Bipolar transistor) online junction temperature measuring circuit and measuring method thereof
CN115166601A (en) * 2022-06-21 2022-10-11 华北电力大学 MMC submodule state online monitoring method and system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345512A (en) * 2008-07-08 2009-01-14 无锡友达电子有限公司 Method for over-temperature protection through monitoring power tube junction temperature by collecting anode penetration current
CN104634466A (en) * 2013-11-14 2015-05-20 北京华峰测控技术有限公司 Junction temperature simulation circuit for semiconductor power devices
DE102016215008A1 (en) * 2016-08-11 2018-02-15 Siemens Aktiengesellschaft Method for operating a converter and thereafter operating converter
CN111220891A (en) * 2020-03-04 2020-06-02 楚天龙股份有限公司 IGBT junction temperature measuring method and measuring device
CN111983415A (en) * 2020-08-20 2020-11-24 湖南大学 Power device junction temperature on-line measuring system
CN112953363A (en) * 2021-04-09 2021-06-11 南京理工大学 Active heat control method of light storage direct current micro-grid system
CN113589126A (en) * 2021-07-30 2021-11-02 奇舍电子科技(上海)有限公司 Transient time measuring device, junction temperature measuring system and method of power electronic device
CN114839499A (en) * 2022-03-02 2022-08-02 西安电子科技大学 Power device junction temperature on-line monitoring system based on dynamic threshold voltage

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Mohamed Halick Mohamed Sathik *
Tseng King Jet ; Karthik Kandasamy ; Sundararajan Prasanth ; Rejeki Simanjorang ; .Online Electro-Thermal Model for Real Time Junction Temperature Estimation for Insulated Gate Bipolar Transistor (IGBT) .2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC).2017,全文. *
电力电子电路中功率晶体管结温在线测量技术研究现状;任磊;沈茜;龚春英;;电工技术学报;第33卷(第8期);第1750-1761页 *

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