CN115951192A - Junction temperature detection device, method and medium of power device - Google Patents
Junction temperature detection device, method and medium of power device Download PDFInfo
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Abstract
The invention discloses a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium of a power device, and relates to the field of junction temperature detection. The method has the advantages of high response speed, small error, no damage to the power device and the external package thereof, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process, and guarantee of the safety of the power device in the use process.
Description
Technical Field
The invention relates to the field of junction temperature detection, in particular to a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium of a power device.
Background
Power devices such as MOS transistors are at the core of modern power electronic converters, and play a very important role in reliability, cost and performance of the devices. However, the power device may degrade during continuous operation, and if the degradation trend of the power device cannot be accurately detected, the failure fault condition of the power device cannot be accurately determined, so a reliable method is needed to detect the degradation trend of the power device in real time.
In the prior art, because the junction temperature is an important parameter of the power device, and the degradation trend and the failure fault condition of the power device during service are closely related to the junction temperature fluctuation and the junction temperature amplitude value inside the power device in the operation process, the degradation trend of the power device is reflected mainly by adopting a mode of detecting the junction temperature of the power device in the prior art. However, in the prior art, there are three methods for measuring the junction temperature of a power device: the first method is a physical contact method, which uses a thermistor or other thermal sensor placed inside the power device to directly measure the temperature, but because the response speed of the thermal sensor itself is slow, the junction temperature error obtained by the method is large, and the online monitoring is intended to be realized, which may directly cause the damage of the power device; the second is an optical method, which can image the temperature field on the object surface through the thermal infrared sensitive charged coupling device, but the method needs to open the housing of the power device and install the thermal infrared sensitive charged coupling device, which may affect the characteristics of the power device such as voltage resistance, current resistance, etc., on the one hand, and on the other hand, needs to destroy the external package of the power device, and is difficult to be applied in practice; the third method is a thermal model method, which is to calculate the change of the internal junction temperature by using the currently known thermal parameters such as thermal resistance and the like put into a thermal resistance network model through fitting calculation, however, the thermal parameters such as thermal resistance and the like can also change along with the degradation of the device in the actual application of the device, and the calculated junction temperature error is larger and larger.
Disclosure of Invention
The invention aims to provide a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium of a power device. The method has the advantages of high response speed, small error, no damage to the power device and the external package thereof, real-time detection of the junction temperature of the current power device, namely the degradation trend of the power device, improvement of the reliability of the power device in the use process, and guarantee of the safety of the power device in the use process.
In order to solve the above technical problem, the present invention provides a junction temperature detection apparatus for a power device, including: the device comprises a first voltage acquisition module, a charging module, a discharging module and a capacitor;
a first input end of the first voltage acquisition module is connected with a first end of a power device, a second input end of the first voltage acquisition module is connected with a second end of the power device, the first input end and the second input end of the first voltage acquisition module are used for measuring voltage between the first end and the second end of the power device, and a control end of the power device is accessed to a PWM signal; the power device is completely switched on after time delay on-time when the PWM signal is at a first level, and is switched off when the PWM signal is at a second level, and the first level is opposite to the second level;
the first end of the charging module is connected with the first end of the capacitor, the second end of the charging module is connected with a first power supply, and the control end is connected to the PWM signal and is used for controlling the first power supply to charge the capacitor when the PWM signal is at a first level and within the delay conduction time;
the second end of the capacitor is grounded;
the control end of the discharging module is connected with the output end of the voltage collecting module, and the discharging end is connected with the first end of the capacitor and used for controlling the capacitor to discharge when the voltage when the power device is completely switched on is received.
Preferably, the power device is an N-type MOS transistor, a gate of the N-type MOS transistor is used as a control end of the power device, a drain of the N-type MOS transistor is used as a first end of the power device, and a source of the N-type MOS transistor is used as a second end of the power device.
Preferably, the discharge module includes: the power supply comprises a comparator, a first power electronic device and a first resistor;
the positive phase input end of the comparator is connected with a second power supply, the negative phase input end of the comparator is connected with the output end of the voltage acquisition module, and the output end of the comparator is connected with the control end of the first power electronic device, so that when the negative phase input end receives the voltage when the power device is completely conducted, the first power electronic device is controlled to be conducted, and the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device during delayed conduction is not less than the voltage of the second power supply;
the first end of the first power electronic device is connected with the capacitor, and the second end of the first power electronic device is connected with the first end of the first resistor;
the second end of the first resistor is connected with the ground.
Preferably, the first power electronic device is a first triode, a base of the first triode is used as a control terminal of the first power electronic device, an emitter of the first triode is used as a first terminal of the first power electronic device, and a collector of the first triode is used as a second terminal of the first power electronic device.
Preferably, the charging module includes: a second power electronic device and a second resistor;
a first end of the second power electronic device is connected with a first end of the second resistor, a second end of the second power electronic device is connected with the first power supply, and a control end of the second power electronic device is connected with a PWM (pulse-width modulation) signal and is used for controlling the first power supply to charge the capacitor within the delay on-time when the PWM signal is at a first level;
and the second end of the second resistor is connected with the capacitor.
Preferably, the second power electronic device is a second triode, a base of the second triode is used as a control terminal of the second power electronic device, a collector of the second triode is used as a first terminal of the second power electronic device, and an emitter of the second triode is used as a second terminal of the second power electronic device.
Preferably, the discharge module further includes:
and a first end of the third resistor is connected with the output end of the comparator, and a second end of the third resistor is connected with the control end of the first power electronic device.
Preferably, the method further comprises the following steps:
the input end of the second voltage acquisition module is connected with the first end of the capacitor and used for acquiring the voltage of the capacitor in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the capacitor charging process and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value of the capacitor and the junction temperature of the power device.
In order to solve the above technical problem, the present invention further provides a junction temperature detection method for a power device, where the junction temperature detection method is based on the junction temperature detection device for a power device, and the method includes:
determining a voltage peak value in the capacitor charging process;
and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
In order to solve the above technical problem, the present invention further provides a computer-readable storage medium, where a computer program is stored, and the computer program, when executed by a processor, implements the steps of the junction temperature detection method for a power device described above.
The invention aims to provide a junction temperature detection device, a junction temperature detection method and a junction temperature detection medium of a power device. The method has the advantages of high response speed, small error, no damage to the power device and the external package thereof, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process, and guarantee of the safety of the power device in the use process.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required in the prior art and the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a junction temperature detection apparatus for a power device according to the present invention;
FIG. 2 is a relationship diagram of the PWM signal, the turn-on voltage of the power device, the voltage of the first voltage acquisition module, the voltage received by the discharge module, and the capacitor voltage provided by the present invention;
FIG. 3 is a graph of voltage versus time for a first voltage acquisition module according to the present invention;
fig. 4 is a schematic structural diagram of a junction temperature detection apparatus of another power device provided by the present invention;
FIG. 5a is a graph of capacitance voltage versus time at different temperatures according to the present invention;
FIG. 5b is a graph of the peak voltage of the capacitor versus temperature provided by the present invention;
fig. 6 is a process flow chart of a junction temperature detection method for a power device according to the present invention.
Detailed Description
The core of the invention is to provide a device, a method and a medium for detecting the junction temperature of a power device, because the junction temperature of the power device can influence the delay conduction time of the power device, the delay conduction time of the power device can influence the charging time of a capacitor, and the charging time of the capacitor can influence the voltage peak value in the charging process of the capacitor, the junction temperature detection device of the power device indirectly obtains the junction temperature of the power device by determining the voltage peak value in the charging process of the capacitor and by the voltage peak value. The method has the advantages of high response speed, small error, no damage to the power device and the external package thereof, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process, and guarantee of the safety of the power device in the use process.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a junction temperature detection apparatus for a power device according to the present invention. The device comprises: the device comprises a first voltage acquisition module 1, a charging module 2, a discharging module 3 and a capacitor 4;
a first input end of the first voltage acquisition module 1 is connected with a first end of the power device, a second input end of the first voltage acquisition module is connected with a second end of the power device and is used for measuring the voltage between the first end and the second end of the power device, and a control end of the power device is connected with the PWM signal; the power device is completely switched on after the time delay on-time when the PWM signal is at a first level and is switched off when the PWM signal is at a second level, and the first level and the second level are opposite;
the first end of the charging module 2 is connected with the first end of the capacitor 4, the second end of the charging module is connected with a first power supply, and the control end is connected with the PWM signal and is used for controlling the first power supply to charge the capacitor 4 when the PWM signal is at a first level and within a delay conduction time;
the second end of the capacitor 4 is grounded;
the control end of the discharging module 3 is connected with the output end of the voltage collecting module, and the discharging end is connected with the first end of the capacitor 4 and used for controlling the capacitor 4 to discharge when the voltage when the power device is completely switched on is received.
In the invention, the first voltage acquisition module 1 is mainly used for measuring the voltage at two ends of the power device. The control end of the power device is connected with the PWM signal and is controlled by the PWM signal to be turned on and off, when the level of the PWM signal is changed from the second level to the first level, the power device starts to be conducted, as shown in fig. 2, but as the complete conduction of the power device requires a certain conduction time, the voltage measured by the first voltage acquisition module 1 is at a high level during the period from the time when the power device starts to be conducted to the time when the power device is completely conducted.
Because the PWM signal is at the first level during the period from the power device being turned on to the full-on state, and the control terminal of the charging module 2 is connected to the PWM signal, the charging module 2 is turned on and controls the first power supply to charge the capacitor 4 during the period from the power device being turned on to the full-on state. The discharge module 3 is turned off at this time during the period from when the power device starts to be turned on to when it is turned on completely because the power device is not turned on completely. When the power device is completely turned on, the charging module 2 is turned off, the discharging module 3 is turned on, and the discharging module 3 discharges the capacitor 4. Therefore, the junction temperature detection device of the whole power device can acquire a voltage peak value formed after the voltage of the capacitor 4 is charged and discharged, and the junction temperature of the power device can affect the delay conduction time of the power device, the delay conduction time of the power device can affect the charging time of the charging, and the charging time of the capacitor 4 can affect the voltage peak value in the charging process of the capacitor 4, so that the junction temperature detection device of the power device can determine the junction temperature of the current power device by determining the voltage peak value in the charging process of the capacitor 4 and the corresponding relation between the voltage peak value and the junction temperature of the power device. The method has the advantages of high response speed, small error, easy practical application, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process and guarantee of the safety of the power device in the use process.
In practical applications, the power device may be an N-type MOS transistor or other power devices.
It should be noted that, if the power device is an N-type MOS transistor, the second level is a negative level, and the first level is a positive level.
It should be further noted that the conduction delay time of the power device is related to the junction temperature of the power device, and the higher the junction temperature is, the shorter the conduction process of the power device is. As shown in fig. 3, the junction temperature mainly includes: the conduction delay time of the power device is shortest when the junction temperature is 150 ℃, 125 ℃, 100 ℃, 75 ℃, 50 ℃ and 25 ℃; when the junction temperature is 25 ℃, the turn-on delay time of the power device is longest.
The invention provides a junction temperature detection device of a power device, which can indirectly obtain the junction temperature of the power device by determining the voltage peak value in the charging process of a capacitor 4 and by the voltage peak value because the junction temperature of the power device can influence the delay conduction time of the power device, the delay conduction time of the power device can influence the charging time of the capacitor 4, and the charging time of the capacitor 4 can influence the voltage peak value in the charging process of the capacitor 4. The method has the advantages of high response speed, small error, no damage to the power device and the external package thereof, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process, and guarantee of the safety of the power device in the use process.
On the basis of the above-described embodiment:
referring to fig. 4, fig. 4 is a schematic structural diagram of another junction temperature detection apparatus for a power device according to the present invention.
In a preferred embodiment, the power device is an N-type MOS transistor, a gate of the N-type MOS transistor serves as a control terminal of the power device, a drain of the N-type MOS transistor serves as a first terminal of the power device, and a source of the N-type MOS transistor serves as a second terminal of the power device.
In the invention, the detected power device is an N-type MOS tube, so the first voltage acquisition module 1 is mainly used for measuring the voltage at two ends of the drain electrode and the source electrode of the N-type MOS tube. The control end of the N-type MOS tube is connected with a PWM signal, when the level of the PWM signal is a first level, the N-type MOS tube starts to be conducted and is completely conducted after a period of time, and certainly, the first level is larger than the starting voltage (grid source voltage) of the N-type MOS tube.
As a preferred embodiment, the discharge module 3 includes: a comparator 5, a first power electronics device 6 and a first resistor 7;
the positive phase input end of the comparator 5 is connected with the second power supply, the negative phase input end is connected with the output end of the voltage acquisition module, and the output end is connected with the control end of the first power electronic device 6, so that when the negative phase input end receives the voltage when the power device is completely conducted, the first power electronic device 6 is controlled to be conducted, and the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device during delayed conduction is not less than the voltage of the second power supply;
a first end of the first power electronic device 6 is connected with the capacitor 4, and a second end is connected with a first end of the first resistor 7;
the second terminal of the first resistor 7 is connected to ground.
In the present invention, the discharge module 3 includes: a comparator 5, a first power electronics device 6 and a first resistor 7; the operating principle of the comparator 5 is that when the voltage at the positive input terminal of the comparator 5 is higher than the voltage at the negative input terminal of the comparator 5, a high level is output, and when the voltage at the positive input terminal of the comparator 5 is lower than the voltage at the negative input terminal of the comparator 5, a low level is output. Therefore, when the voltage received by the negative phase input end is the voltage during the period from the time when the power device starts to be turned on to the time when the power device is completely turned on, the voltage of the positive input end of the comparator 5 (the voltage of the second power supply) is lower than the voltage of the negative input end of the comparator 5, the output end of the comparator 5 outputs a low level, and controls the first power electronic device 6 to be turned off, and the capacitor 4 is not discharged at this time; when the voltage received by the negative phase input terminal is the voltage when the power device is completely turned on, the voltage of the positive input terminal of the comparator 5 (the voltage of the second power supply) is higher than the voltage of the negative input terminal of the comparator 5, the output terminal of the comparator 5 outputs a high level, and controls the first power electronic device 6 to be turned on, and at this time, the capacitor 4 is discharged. Simple structure, with low costs, the consumption is little, can discharge electric capacity 4 rapidly, has improved the efficiency that detects.
In practical applications, the first power electronic device 6 may be a first triode or other power electronic devices.
As a preferred embodiment, the first power electronic device 6 is a first transistor, a base of the first transistor is used as a control terminal of the first power electronic device 6, an emitter of the first transistor is used as a first terminal of the first power electronic device 6, and a collector of the first transistor is used as a second terminal of the first power electronic device 6.
In the invention, the first power electronic device 6 is the first triode, so that the price is low and the cost is reduced.
As a preferred embodiment, the charging module 2 includes: a second power electronic device 8 and a second resistor 9;
a first end of the second power electronic device 8 is connected with a first end of the second resistor 9, a second end of the second power electronic device 8 is connected with the first power supply, and a control end of the second power electronic device 8 is connected with the PWM signal and is used for controlling the first power supply to charge the capacitor 4 when the PWM signal is at a first level and in the delay conduction time;
a second terminal of the second resistor 9 is connected to the capacitor 4.
In the present invention, the charging module 2 includes: a second power electronic device 8 and a second resistor 9; the control end of the second power electronic device 8 is connected to the PWM signal, so that when the PWM signal is at the first level and the power device is turned on during a period from the time when the power device starts to be turned on to the time when the power device is turned on completely, the second power electronic device 8 controls the first power supply to charge the capacitor 4; when the power device is fully on the second power electronic device 8 is switched off and the first power supply no longer charges the capacitor 4. Simple structure, with low costs, the consumption is little, can discharge electric capacity 4 rapidly, has improved the efficiency that detects.
In practical applications, the second power electronic device 8 may be a second transistor or other power electronic device.
In a preferred embodiment, the second power electronic device 8 is a second transistor, a base of the second transistor is used as a control terminal of the second power electronic device 8, a collector of the second transistor is used as a first terminal of the second power electronic device 8, and an emitter of the second transistor is used as a second terminal of the second power electronic device 8.
In the invention, the second power electronic device 8 is the second triode, so that the price is low and the cost is reduced.
As a preferred embodiment, the discharging module further includes:
and a first end of the third resistor 10 is connected with the output end of the comparator 5, and a second end of the third resistor 10 is connected with the control end of the first power electronic device 6.
In the invention, the discharge module further comprises a third resistor 10, and the third resistor 10 is arranged between the output end of the comparator 5 and the control end of the first power electronic device 6, so that the current limiting effect is achieved, and the reliability of the junction temperature detection device is improved.
As a preferred embodiment, further comprising:
the input end of the second voltage acquisition module is connected with the first end of the capacitor 4 and is used for acquiring the voltage of the capacitor 4 in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the charging process of the capacitor 4 and determining the junction temperature of the power device according to the voltage peak value, the voltage peak value of the capacitor 4 and the junction temperature of the power device.
In the invention, the junction temperature detection device further comprises a second voltage acquisition module and a processor, the second voltage acquisition module is used for acquiring the voltage of the capacitor 4 in the charging and discharging processes, and the processor is used for analyzing the voltage acquired by the second voltage acquisition module to obtain the voltage peak value of the capacitor 4 in the charging process, because the junction temperature of the power device can influence the delay conduction time of the power device, the delay conduction time of the power device can influence the charging time of the capacitor 4, and the charging time of the capacitor 4 can influence the voltage peak value of the capacitor 4 in the charging process. Therefore, after the voltage peak value in the charging process of the capacitor 4 is determined, the processor can determine the junction temperature of the current power device according to the corresponding relation between the voltage peak value and the junction temperature of the power device. The junction temperature detection device has the advantages that the response speed is high, the error is small, the junction temperature detection device is easy to be applied in practice, the junction temperature of the current power device can be detected in real time, namely the degradation trend of the power device is detected in real time, the reliability of the power device in the using process is improved, and the safety of the power device in the using process is ensured.
It should be noted that, the relationship between the voltage and the time of the capacitor 4 in the charging and discharging processes is shown in fig. 5a and fig. 5b, wherein fig. 5a is a graph of the relationship between the voltage and the time of the capacitor at different temperatures provided by the present invention; FIG. 5b is a graph showing the relationship between the peak voltage value of the capacitor and the temperature according to the present invention.
Referring to fig. 6, fig. 6 is a process flow chart of a method for detecting junction temperature of a power device according to the present invention. The junction temperature detection device based on the power device comprises:
s11, determining a voltage peak value in the capacitor charging process;
and S12, determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
In the invention, because the junction temperature of the power device can influence the delay conduction time of the power device, and the delay conduction time of the power device can influence the charging time of the capacitor 4, the charging time of the capacitor 4 can influence the voltage peak value in the charging process of the capacitor 4. Therefore, the junction temperature detection method of the power device can determine the junction temperature of the current power device by determining the voltage peak value in the charging process of the capacitor 4 and the corresponding relation between the voltage peak value and the junction temperature of the power device. The method has the advantages of high response speed, small error, easy practical application, real-time detection of the junction temperature of the current power device, namely the real-time detection of the degradation trend of the power device, improvement of the reliability of the power device in the use process and guarantee of the safety of the power device in the use process.
The junction temperature detection method of the power device provided in this embodiment corresponds to the above-mentioned apparatus, and therefore has the same beneficial effects as the above-mentioned apparatus, and for the embodiment of the junction temperature detection method of the power device, reference is made to the description of the embodiment of the apparatus section, and details are not repeated here.
The invention further provides a corresponding embodiment of a computer-readable storage medium, where a computer program is stored, and when the computer program is executed by a processor, the steps of the junction temperature detection method for a power device are implemented.
The computer-readable storage medium provided in this embodiment corresponds to the above-mentioned apparatus, and therefore, has the same advantages as the above-mentioned apparatus, and for the embodiments of the computer-readable storage medium portion, reference is made to the description of the embodiments of the apparatus portion, which is not repeated herein.
The present invention also provides an embodiment corresponding to a computer-readable storage medium, where a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method for detecting the junction temperature of the power device are implemented.
The computer-readable storage medium provided in this embodiment corresponds to the above-mentioned apparatus, and therefore, has the same advantages as the above-mentioned apparatus, and for the embodiments of the computer-readable storage medium portion, reference is made to the description of the embodiments of the apparatus portion, which is not repeated herein.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. Junction temperature detection apparatus of a power device, characterized by comprising: the device comprises a first voltage acquisition module, a charging module, a discharging module and a capacitor;
the first input end of the first voltage acquisition module is connected with the first end of a power device, the second input end of the first voltage acquisition module is connected with the second end of the power device and used for measuring the voltage between the first end and the second end of the power device, and the control end of the power device is accessed to a PWM signal; the power device is completely switched on after the time delay on-time when the PWM signal is at a first level, and is switched off when the PWM signal is at a second level, wherein the first level is opposite to the second level;
the first end of the charging module is connected with the first end of the capacitor, the second end of the charging module is connected with a first power supply, and the control end is connected to the PWM signal and is used for controlling the first power supply to charge the capacitor when the PWM signal is at a first level and within the delay conduction time;
the second end of the capacitor is grounded;
the control end of the discharging module is connected with the output end of the voltage acquisition module, and the discharging end is connected with the first end of the capacitor and used for controlling the capacitor to discharge when the voltage when the power device is completely switched on is received.
2. The junction temperature detecting device of a power device according to claim 1, wherein the power device is an N-type MOS transistor, a gate of the N-type MOS transistor serves as a control terminal of the power device, a drain of the N-type MOS transistor serves as a first terminal of the power device, and a source of the N-type MOS transistor serves as a second terminal of the power device.
3. The junction temperature detection apparatus of a power device according to claim 1, wherein the discharging module includes: the circuit comprises a comparator, a first power electronic device and a first resistor;
the positive phase input end of the comparator is connected with a second power supply, the negative phase input end of the comparator is connected with the output end of the voltage acquisition module, and the output end of the comparator is connected with the control end of the first power electronic device and used for controlling the first power electronic device to be conducted when the negative phase input end receives the voltage when the power device is completely conducted, wherein the voltage when the power device is completely conducted is smaller than the voltage of the second power supply; the voltage of the power device during delayed conduction is not less than the voltage of the second power supply;
the first end of the first power electronic device is connected with the capacitor, and the second end of the first power electronic device is connected with the first end of the first resistor;
the second end of the first resistor is connected with the ground.
4. The junction temperature detecting apparatus of a power device as claimed in claim 3, wherein the first power electronic device is a first transistor, a base of the first transistor is used as a control terminal of the first power electronic device, an emitter of the first transistor is used as a first terminal of the first power electronic device, and a collector of the first transistor is used as a second terminal of the first power electronic device.
5. The junction temperature detection apparatus of a power device according to claim 3, wherein the charging module comprises: a second power electronic device and a second resistor;
a first end of the second power electronic device is connected with a first end of the second resistor, a second end of the second power electronic device is connected with the first power supply, and a control end of the second power electronic device is connected with a PWM (pulse-width modulation) signal and is used for controlling the first power supply to charge the capacitor within the delay on-time when the PWM signal is at a first level;
and the second end of the second resistor is connected with the capacitor.
6. The junction temperature detecting apparatus of a power device as claimed in claim 5, wherein the second power electronic device is a second transistor, a base of the second transistor is used as a control terminal of the second power electronic device, a collector of the second transistor is used as a first terminal of the second power electronic device, and an emitter of the second transistor is used as a second terminal of the second power electronic device.
7. The junction temperature detection apparatus of a power device according to claim 3, wherein the discharging module further comprises:
and a first end of the third resistor is connected with the output end of the comparator, and a second end of the third resistor is connected with the control end of the first power electronic device.
8. The junction temperature detection apparatus for a power device according to any one of claims 1 to 7, further comprising:
the input end of the second voltage acquisition module is connected with the first end of the capacitor and used for acquiring the voltage of the capacitor in the charging and discharging processes;
and the processor is connected with the output end of the second voltage acquisition module and is used for determining a voltage peak value in the capacitor charging process and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value of the capacitor and the junction temperature of the power device.
9. A junction temperature detection method of a power device, characterized in that based on the junction temperature detection device of the power device according to any one of claims 1 to 8, the method comprises:
determining a voltage peak value in the capacitor charging process;
and determining the junction temperature of the power device according to the voltage peak value and the corresponding relation between the voltage peak value and the junction temperature of the power device.
10. A computer-readable storage medium, having stored thereon a computer program which, when being executed by a processor, carries out the steps of the method for detecting junction temperature of a power device according to claim 9.
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