CN115948792A - Single crystal furnace device - Google Patents
Single crystal furnace device Download PDFInfo
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- CN115948792A CN115948792A CN202211562146.6A CN202211562146A CN115948792A CN 115948792 A CN115948792 A CN 115948792A CN 202211562146 A CN202211562146 A CN 202211562146A CN 115948792 A CN115948792 A CN 115948792A
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- tail gas
- reaction chamber
- crucible
- single crystal
- phosphide
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- 239000013078 crystal Substances 0.000 title claims abstract description 81
- 238000006243 chemical reaction Methods 0.000 claims abstract description 64
- 239000010453 quartz Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010439 graphite Substances 0.000 claims abstract description 15
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 73
- 239000011261 inert gas Substances 0.000 claims description 41
- 238000001914 filtration Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 11
- 238000002485 combustion reaction Methods 0.000 claims description 11
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 7
- 238000011084 recovery Methods 0.000 claims description 7
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 239000008187 granular material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 4
- 230000002588 toxic effect Effects 0.000 description 4
- 238000002231 Czochralski process Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a single crystal furnace device, and belongs to the technical field of semiconductor manufacturing. Wherein, single crystal growing furnace device includes: a crystal pulling furnace; a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible; an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace; and the tail gas reaction chamber is communicated with the exhaust pipeline and is used for accommodating the tail gas transmitted by the exhaust pipeline and treating the tail gas to remove phosphide in the tail gas. The technical scheme of the invention can treat the tail gas discharged by the crystal pulling furnace.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a single crystal furnace device.
Background
Single crystal silicon is a semiconductor material generally used for manufacturing integrated circuits and other electronic components, and currently, there are two growth techniques for single crystal silicon: the float zone process and the czochralski process, with the czochralski process being the process currently in common use. During the production of single crystal silicon by the Czochralski method, a polycrystalline material is placed in a quartz crucible, heated at a high temperature to melt the polycrystalline material, a seed crystal is lowered from the top into the molten polycrystalline silicon, and the molten polycrystalline silicon is recrystallized around the seed crystal by controlling the temperature of the liquid surface to produce an orderly arranged single crystal silicon rod.
In the related art, in the preparation of N + When the crystal bar is crystallized, high-purity red phosphorus is required to be doped, and N is drawn + Crystal bar timeSince red phosphorus is highly volatile, about 50% of the incorporated red phosphorus is usually volatilized as an oxide, and phosphorus compounds (usually phosphorus oxide and phosphine) are discharged out of the crystal pulling furnace through the exhaust pipe under the purging of an inert gas, the exhaust gas is highly toxic and unstable in chemical properties, and the exhaust gas needs to be treated correspondingly to be discharged.
Disclosure of Invention
In order to solve the technical problem, the invention provides a single crystal furnace device which can treat tail gas discharged by a crystal pulling furnace.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that:
a single crystal furnace apparatus comprising:
a crystal pulling furnace;
a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible;
an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace;
and the tail gas reaction chamber is communicated with the exhaust pipeline and is used for accommodating the tail gas transmitted by the exhaust pipeline and treating the tail gas to remove phosphide in the tail gas.
In some embodiments, the off-gas reaction chamber comprises:
the filter chamber is used for filtering the tail gas, separating phosphide and inert gas in the tail gas and accommodating the filtered inert gas;
and the reaction chamber is positioned below the filtering chamber and is used for introducing oxygen-containing air to perform combustion reaction with the phosphide.
In some embodiments, the filter chamber comprises:
a first container for containing the filtered inert gas;
and the filter screen is arranged at the inlet of the first container and is used for filtering out phosphide in the tail gas.
In some embodiments, the diameter of the filter pores of the filter screen is gradually smaller in the flow direction of the exhaust gas.
In some embodiments, the single crystal furnace apparatus further comprises:
the weight sensor is arranged in the tail gas reaction chamber and used for detecting the weight of phosphide contained in the tail gas reaction chamber and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the tail gas reaction chamber to vibrate at a preset frequency when the weight data is greater than a set value.
In some embodiments, the single crystal furnace apparatus further comprises:
a one-way valve disposed in the reaction chamber;
and the control unit is also used for controlling the one-way valve to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the reaction chamber and carries out combustion reaction with the phosphide.
In some embodiments, the control unit is configured to control a valve opening degree of the check valve according to the weight data, and the valve opening degree of the check valve is proportional to the weight data.
In some embodiments, the base of the reaction chamber is a porous structure, and the single crystal furnace apparatus further comprises:
a water tank disposed below the reaction chamber in a vertical direction;
the control unit is also used for controlling the base of the reaction chamber to be immersed into the water tank after the combustion is finished.
In some embodiments, the single crystal furnace apparatus further comprises:
a first end of the vacuum pump is communicated with the outlet of the filtering chamber and is used for pumping the inert gas discharged from the outlet of the filtering chamber;
and the inert gas recovery structure is communicated with the second end of the vacuum pump and is used for storing the inert gas extracted by the vacuum pump.
In some embodiments, the inert gas recovery structure comprises:
and the second end of the vacuum pump extends into the sodium hypochlorite solution contained in the sodium hypochlorite solution containing tank and is used for reacting with the residual phosphide in the inert gas to generate phosphate.
The invention has the beneficial effects that:
in the embodiment, the lower part of the crystal pulling furnace is provided with the exhaust pipeline for exhausting tail gas generated by the growth of the monocrystalline silicon, so that the tail gas is prevented from influencing the growth of the monocrystalline silicon; in addition, the tail gas reaction chamber is communicated with the exhaust pipeline, so that tail gas can be treated, phosphide in the tail gas is removed, and the harm of toxic phosphide to the environment is avoided.
Drawings
FIG. 1 is a schematic view showing a structure of a single crystal growing furnace apparatus according to an embodiment of the present invention.
Reference numerals
1. Crystal pulling furnace
2. Crucible device
3. Exhaust pipe
4. Reaction chamber
5 base of reaction chamber
6. Water tank
7. Filter screen
8. One-way valve
9. Inert gas recovery structure
10 sodium hypochlorite solution
11. Second end of vacuum pump
12. Sodium hypochlorite solution holding tank
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the description of the embodiments of the invention given above, are within the scope of protection of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
There are two main types of crystal rods drawn by crystal pulling furnaces: n-ingot and N + The resistance of the N-crystal bar is 8-30 omega/cm 2 The doping of the crystal bar is usually doped in a master alloy mode, similar to the drawing of a P-type crystal bar, when in doping, a master alloy sheet and a silicon material are directly put into a crucible together for heating and melting, and the doping mode is simpler; but for N + The crystal rod is doped after the silicon material is melted because the crystal rod needs to be doped with high-purity red phosphorus which has strong volatility. N is a radical of + The resistivity of the crystal bar is 0.001-0.002 omega/cm 2 The weight of the doped red phosphorus is 900-1900-g, and the silicon dosage is 400-450kg. During the drawing of the heavily doped ingots, since red phosphorus is highly volatile, typically about 50% of the doped red phosphorus is volatilized as an oxide, and the phosphide (typically phosphorus oxide and phosphine) is discharged out of the crystal pulling furnace through the exhaust pipe under the purging of the inert gas, and since the exhaust gas is highly toxic and chemically unstable, the exhaust gas needs to be treated accordingly to be discharged.
The invention provides a single crystal furnace device for preparing the N + The crystal bar can treat tail gas discharged by the crystal pulling furnace.
The present invention provides a single crystal furnace apparatus, as shown in fig. 1, comprising:
a crystal pulling furnace 1;
a crucible shaft is arranged in the crystal pulling furnace 1, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace 1, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible, wherein the quartz crucible, the graphite crucible and the crucible tray form a crucible device 2;
an exhaust pipeline 3 is arranged at the lower part of the crystal pulling furnace 1 and used for exhausting tail gas generated by growth of monocrystalline silicon in the crystal pulling furnace 1;
and the tail gas reaction chamber is communicated with the exhaust pipeline 3 and is used for accommodating the tail gas transmitted by the exhaust pipeline 3 and treating the tail gas to remove phosphide in the tail gas.
In the embodiment, the lower part of the crystal pulling furnace is provided with the exhaust pipeline for exhausting tail gas generated by the growth of monocrystalline silicon, so that the tail gas is prevented from influencing the growth of the monocrystalline silicon; in addition, the tail gas reaction chamber is communicated with the exhaust pipeline, so that tail gas can be treated, phosphide in the tail gas is removed, and the harm of toxic phosphide to the environment is avoided.
In the embodiment, in the crystal pulling process, a silicon solution is contained in a quartz crucible in the crystal pulling furnace 1, a graphite crucible is arranged outside the quartz crucible, the graphite crucible plays a role of supporting and wrapping the quartz crucible, and the crucible made of graphite has high strength and structural stability at high temperature and provides favorable support for the quartz crucible because the quartz crucible can be locally softened at high temperature; meanwhile, because graphite has high heat conductivity coefficient at high temperature, the heat of the heater can be well and uniformly transmitted to the quartz crucible, the quartz crucible transfers the heat to the silicon solution, the liquid level temperature is kept constant, the stable proceeding of the crystal pulling solidification process is facilitated, a crucible tray is arranged below the graphite crucible, a crucible shaft is arranged below the crucible tray, in order to obtain uniform radial oxygen content in the crystal pulling process, the crucible shaft supports the whole crucible device (comprising the crucible tray, the graphite crucible and the quartz crucible) and the silicon solution to do rotary motion, meanwhile, the crystal bar pulling device drives the crystal bar to do rotary motion at the same rotating speed with the same rotating direction, and the whole crucible device and the crystal bar are kept relatively static, so that the disturbance of the crystal bar to the melt can be well reduced, the generation of turbulent flow in the melt is reduced, and the uniform soaking of oxygen into the crystal bar is facilitated.
In some embodiments, as shown in fig. 1, the off-gas reaction chamber comprises:
the filter chamber is used for filtering the tail gas, separating phosphide and inert gas in the tail gas and accommodating the filtered inert gas;
and the reaction chamber 4 is positioned below the filtering chamber and is used for introducing oxygen-containing air to perform combustion reaction with the phosphide.
In this embodiment, exhaust pipe 3 one end links to each other with the interior exhaust pipe of crystal pulling furnace 1, and one end is connected with the tail gas reaction chamber, and tail gas gets into the tail gas reaction chamber along exhaust pipe 3 under inert gas's sweeping, and this tail gas reaction chamber divide into two parts: the upper part is a filter chamber, the lower part is a reaction chamber 4, and the filter chamber can separate phosphide and inert gas, so that the inert gas can be recycled; the reaction chamber 4 can be filled with oxygen-containing air, so that the phosphide and the oxygen-containing air are subjected to combustion reaction to generate solid particles.
In some embodiments, as shown in fig. 1, the filtering chamber comprises:
a first container for containing the filtered inert gas;
and the filter screen 7 is arranged at the inlet of the first container and is used for filtering out phosphide in the tail gas.
The tail gas is held in first container after being discharged by exhaust duct, enters into the in-process of first container from exhaust duct (set up under room temperature environment, therefore the temperature is low), and phosphide gas in the tail gas converts into phosphide granule under the effect that the temperature reduces, and phosphide granule can be filtered to filter screen 7 on, is blockked by filter screen 7, and can not get into first container. Through designing the filtration pore of filter screen 7, can make the filtration pore of filter screen 7 be less than the particle diameter of phosphide granule, be greater than inert gas's molecular diameter, this can make filter screen 7 filter out the phosphide to make the phosphide deposit on filter screen 7, the inert gas after the filtration gets into in the vacuum pump.
In some embodiments, in the flow direction of the exhaust gas, the diameters of the filter pores of the filter net 7 are gradually reduced, and the diameters of the filter pores of the filter net 7 are gradually reduced, so that the phosphide can be effectively blocked outside the filter net 7.
In some embodiments, the single crystal furnace apparatus further comprises:
the weight sensor is arranged in the tail gas reaction chamber and used for detecting the weight of phosphide contained in the tail gas reaction chamber and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the tail gas reaction chamber to vibrate at a preset frequency when the weight data is greater than a set value.
After holding the phosphide of certain weight in the tail gas reaction chamber like this, the control unit can control the tail gas reaction chamber and vibrate with preset frequency, under the effect of shaking, can make absorbent phosphide drop to the reaction chamber 4 of below on the filter screen 7 to avoid filter screen 7 to block, can not exert the filtering action. The predetermined frequency may be 700-800 times per minute, which ensures that the phosphide adsorbed on the filter screen 7 falls down to the reaction chamber 4. Specifically, a vibration motor may be disposed on the exhaust reaction chamber, and the exhaust reaction chamber may be driven to vibrate by the vibration motor. Wherein, an opening and closing door can be arranged above the reaction chamber 4, when the tail gas reaction chamber vibrates, the opening and closing door is opened, and phosphide adsorbed on the filter screen 7 can fall to the reaction chamber 4 below; when the tail gas reaction chamber stops vibrating, the switch door is closed, and the phosphide adsorbed on the filter screen 7 cannot fall to the reaction chamber 4 below.
In some embodiments, as shown in fig. 1, the single crystal furnace apparatus further comprises:
a check valve 8 disposed in the reaction chamber;
and the control unit is also used for controlling the one-way valve 8 to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the reaction chamber and carries out combustion reaction with the phosphide.
Thus, oxygen-containing air enters the reaction chamber 4 through the one-way valve 8 and can react with the phosphide 5 at the bottom of the reaction chamber 4 to generate solid reactant particles.
In some embodiments, the control unit is configured to control the valve opening/closing degree of the check valve 8 according to the weight data, and the valve opening/closing degree of the check valve 8 is proportional to the weight data. Therefore, the more phosphide is contained in the tail gas reaction chamber, the larger the opening degree of the one-way valve 8 is, and more oxygen-containing air can be introduced
The gas reacts with phosphide; if the tail gas reaction chamber contains less phosphide and does not need too much air containing 0 oxygen, the opening degree of the one-way valve 8 does not need to be too large, and a small amount of air containing oxygen is introduced to slowly combust the phosphide.
In some embodiments, as shown in fig. 1, the base 5 of the reaction chamber is a porous structure having a pore size smaller than the diameter of the solid reactant particles, and the single crystal furnace apparatus further includes:
a water tank 6 disposed vertically below the reaction chamber 4, the water tank 6 containing water therein; 5 the control unit is further configured to control the base 5 of the reaction chamber to be immersed in the water tank 6 after the combustion is completed, the base 5 of the reaction chamber can move up and down, the base 5 of the reaction chamber carries the generated solid reactant particles after the combustion is completed, and since the base 5 of the reaction chamber has a porous structure, water can contact the solid reactant particles through the base 5 of the reaction chamber after the base 5 of the reaction chamber is immersed in the water tank 6,
make solid reactant granule dissolve in aqueous, in order to guarantee that solid reactant granule fully dissolves in aqueous, 0 basin 6 can hold warm water, and the temperature of warm water can be 50-70 degrees centigrade, and under this kind of temperature, solid reactant granule can fully dissolve in aqueous.
In some embodiments, as shown in fig. 1, the single crystal furnace apparatus further comprises:
a first end of the vacuum pump is communicated with the outlet of the filtering chamber and is used for pumping the inert gas exhausted from the outlet of the filtering chamber;
and 5, an inert gas recovery structure 9 communicated with the second end of the vacuum pump and used for storing the inert gas extracted by the vacuum pump.
The vacuum pump can extract the inert gas discharged from the outlet of the filter chamber, and the filter screen 7 filters the phosphide, so that the vacuum pump can be protected from being corroded by the phosphide, and the service life of the vacuum pump is prolonged.
In some embodiments, the inert gas recycling structure 9 may be in communication with the inert gas supply system through a gas transmission pipeline, so as to recycle the inert gas.
In some embodiments, as shown in fig. 1, in order to ensure safe discharge of the inert gas, the inert gas recovery structure includes:
and a sodium hypochlorite solution accommodating tank 12, wherein the second end 11 of the vacuum pump extends into the sodium hypochlorite solution 10 accommodated in the sodium hypochlorite solution accommodating tank 12 and is used for reacting with the residual phosphide in the inert gas to generate phosphate.
Gas exhausted from the vacuum pump enters a sodium hypochlorite solution, reacts with phosphide remained in inert gas to generate phosphate, a small amount of oxide remained in the inert gas can be removed, stable phosphate generated by the reaction is deposited to the bottom of the solution, and the inert gas overflows from the sodium hypochlorite solution and can enter an inert gas supply system through a gas transmission pipeline; thus, the tail gas can enter the crystal pulling furnace for reuse after being purified, and the cost can be saved.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and reference may be made to the partial description of the product embodiments for relevant points.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (10)
1. A single crystal furnace apparatus, comprising:
a crystal pulling furnace;
a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible;
an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace;
and the tail gas reaction chamber is communicated with the exhaust pipeline and is used for accommodating the tail gas transmitted by the exhaust pipeline and treating the tail gas to remove phosphide in the tail gas.
2. The single crystal furnace apparatus of claim 1, wherein the off-gas reaction chamber comprises:
the filter chamber is used for filtering the tail gas, separating phosphide and inert gas in the tail gas and accommodating the filtered inert gas;
and the reaction chamber is positioned below the filtering chamber and is used for introducing oxygen-containing air to perform combustion reaction with the phosphide.
3. The single crystal furnace apparatus as claimed in claim 2, wherein the filtering chamber comprises:
a first container for containing the filtered inert gas;
and the filter screen is arranged at the inlet of the first container and is used for filtering out phosphide in the tail gas.
4. The single crystal furnace device according to claim 3, wherein the diameter of the filter pores of the filter screen is gradually reduced in the flow direction of the off-gas.
5. The single crystal furnace apparatus of claim 2, further comprising:
the weight sensor is arranged in the tail gas reaction chamber and used for detecting the weight of phosphide contained in the tail gas reaction chamber and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the tail gas reaction chamber to vibrate at a preset frequency when the weight data is greater than a set value.
6. The single crystal furnace apparatus of claim 5, further comprising:
a one-way valve disposed in the reaction chamber;
and the control unit is also used for controlling the one-way valve to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the reaction chamber and carries out combustion reaction with the phosphide.
7. The single crystal furnace apparatus according to claim 6,
the control unit is used for controlling the opening and closing degree of the valve of the one-way valve according to the weight data, and the opening and closing degree of the valve of the one-way valve is in direct proportion to the weight data.
8. The single crystal furnace apparatus of claim 6, wherein the base of the reaction chamber is a porous structure, the single crystal furnace apparatus further comprising:
a water tank disposed below the reaction chamber in a vertical direction;
the control unit is also used for controlling the base of the reaction chamber to be immersed into the water tank after the combustion is finished.
9. The single crystal furnace apparatus of claim 2, further comprising:
a first end of the vacuum pump is communicated with the outlet of the filtering chamber and is used for pumping the inert gas discharged from the outlet of the filtering chamber;
and the inert gas recovery structure is communicated with the second end of the vacuum pump and is used for storing the inert gas extracted by the vacuum pump.
10. The single crystal furnace apparatus of claim 9, wherein the inert gas recovery structure comprises:
and the second end of the vacuum pump extends into the sodium hypochlorite solution contained in the sodium hypochlorite solution containing tank and is used for reacting with the residual phosphide in the inert gas to generate phosphate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211562146.6A CN115948792A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
| TW112105790A TW202331019A (en) | 2022-12-07 | 2023-02-17 | Single crystal furnace device including a crystal pulling furnace and a tail gas reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211562146.6A CN115948792A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
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| CN115948792A true CN115948792A (en) | 2023-04-11 |
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| CN202211562146.6A Pending CN115948792A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
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| CN115948792A (en) * | 2022-12-07 | 2023-04-11 | 西安奕斯伟材料科技有限公司 | Single crystal furnace device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201411508Y (en) * | 2009-06-20 | 2010-02-24 | 济宁晶祥电子有限公司 | Single crystal pulling furnace |
| CN201551929U (en) * | 2009-11-26 | 2010-08-18 | 北京有色金属研究总院 | Tail gas self-purifying filter device for straight-pulling silicon single-crystal furnace |
| KR20110096906A (en) * | 2010-02-24 | 2011-08-31 | 연세대학교 산학협력단 | Reduction refining method of phosphorus from mg-si by strongly reducing slags |
| JP2012148906A (en) * | 2011-01-17 | 2012-08-09 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Product combustion method of single crystal pulling apparatus |
| CN103103618A (en) * | 2013-01-17 | 2013-05-15 | 陈功 | Sealing water tank of phosphorus diffusion furnace exhaust tube |
| US20130149226A1 (en) * | 2011-12-07 | 2013-06-13 | Lingyan Song | Inert gas recovery and recycle for silicon crystal growth pulling process |
| CN211199470U (en) * | 2019-10-14 | 2020-08-07 | 湖北华昶能源科技有限公司 | Circulating cooling water device for polycrystalline silicon ingot furnace |
| TW202331019A (en) * | 2022-12-07 | 2023-08-01 | 大陸商西安奕斯偉材料科技股份有限公司 | Single crystal furnace device including a crystal pulling furnace and a tail gas reaction chamber |
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2022
- 2022-12-07 CN CN202211562146.6A patent/CN115948792A/en active Pending
-
2023
- 2023-02-17 TW TW112105790A patent/TW202331019A/en unknown
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| CN201411508Y (en) * | 2009-06-20 | 2010-02-24 | 济宁晶祥电子有限公司 | Single crystal pulling furnace |
| CN201551929U (en) * | 2009-11-26 | 2010-08-18 | 北京有色金属研究总院 | Tail gas self-purifying filter device for straight-pulling silicon single-crystal furnace |
| KR20110096906A (en) * | 2010-02-24 | 2011-08-31 | 연세대학교 산학협력단 | Reduction refining method of phosphorus from mg-si by strongly reducing slags |
| JP2012148906A (en) * | 2011-01-17 | 2012-08-09 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Product combustion method of single crystal pulling apparatus |
| US20130149226A1 (en) * | 2011-12-07 | 2013-06-13 | Lingyan Song | Inert gas recovery and recycle for silicon crystal growth pulling process |
| CN103103618A (en) * | 2013-01-17 | 2013-05-15 | 陈功 | Sealing water tank of phosphorus diffusion furnace exhaust tube |
| CN211199470U (en) * | 2019-10-14 | 2020-08-07 | 湖北华昶能源科技有限公司 | Circulating cooling water device for polycrystalline silicon ingot furnace |
| TW202331019A (en) * | 2022-12-07 | 2023-08-01 | 大陸商西安奕斯偉材料科技股份有限公司 | Single crystal furnace device including a crystal pulling furnace and a tail gas reaction chamber |
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|---|---|
| TW202331019A (en) | 2023-08-01 |
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