CN115821383A - Single crystal furnace device - Google Patents
Single crystal furnace device Download PDFInfo
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- CN115821383A CN115821383A CN202211562119.9A CN202211562119A CN115821383A CN 115821383 A CN115821383 A CN 115821383A CN 202211562119 A CN202211562119 A CN 202211562119A CN 115821383 A CN115821383 A CN 115821383A
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Abstract
The invention provides a single crystal furnace device, and belongs to the technical field of semiconductor manufacturing. Wherein, single crystal growing furnace device includes: a crystal pulling furnace; a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible; an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace; and the filtering and recycling structure is communicated with the exhaust pipeline and is used for recycling the inert gas in the tail gas and introducing the recycled inert gas into the crystal pulling furnace. The technical scheme of the invention can improve the uniformity of the oxygen content in the silicon single crystal rod.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a single crystal furnace device.
Background
Single crystal silicon is a semiconductor material generally used for manufacturing integrated circuits and other electronic components, and currently, there are two growth techniques for single crystal silicon: the float zone process and the czochralski process, with the czochralski process being the process currently in common use. During the production of single crystal silicon by the Czochralski method, a polycrystalline material is placed in a quartz crucible, heated at a high temperature to melt the polycrystalline material, a seed crystal is lowered from the top into the molten polycrystalline silicon, and the molten polycrystalline silicon is recrystallized around the seed crystal by controlling the temperature of the liquid surface to produce an orderly arranged single crystal silicon rod.
In the related technology, because the pressure in the monocrystalline silicon crystal pulling furnace is unstable in the growth process of the monocrystalline silicon, the oxygen content of the manufactured monocrystalline silicon rod is uneven, and the quality of the monocrystalline silicon rod is influenced.
Disclosure of Invention
In order to solve the above-described problems, the present invention provides a single crystal furnace apparatus capable of improving uniformity of oxygen content in a silicon single crystal rod.
In order to achieve the purpose, the embodiment of the invention adopts the technical scheme that:
a single crystal furnace apparatus comprising:
a crystal pulling furnace;
a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible;
an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace;
and the filtering and recycling structure is communicated with the exhaust pipeline and is used for recycling the inert gas in the tail gas and introducing the recycled inert gas into the crystal pulling furnace.
In some embodiments, the filtration recovery structure comprises:
and the first filtering structure is communicated with the exhaust pipeline and is used for filtering the tail gas and separating silicon oxide solid particles and inert gas in the tail gas.
In some embodiments, the first filter structure comprises:
the inlet of the filtration and deposition tank is communicated with the exhaust pipeline, and the filtration and deposition tank is used for containing the tail gas transmitted by the exhaust pipeline;
the filter screen that sets up the exit of filtering the sedimentation tank is used for filtering out the silica solid particle in the tail gas, silica solid particle is silica gas in the tail gas meets the condensation and forms.
In some embodiments, the diameter of the filter pores of the filter screen is gradually smaller in the flow direction of the exhaust gas.
In some embodiments, the filtration recovery structure comprises:
a weight sensor provided in the filter deposition tank for detecting a weight of the silica solid particles contained in the filter deposition tank and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the filtering and depositing tank to vibrate at a preset frequency when the weight data is greater than a set value.
In some embodiments, the single crystal furnace apparatus further comprises:
the one-way valve is arranged on the filtering and depositing tank;
the control unit is also used for controlling the one-way valve to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the filtering and depositing tank.
In some embodiments, the control unit is configured to control a valve opening degree of the check valve according to the weight data, and the valve opening degree of the check valve is proportional to the weight data.
In some embodiments, the outlet is disposed vertically above the inlet, and the one-way valve is disposed vertically below the inlet.
In some embodiments, the filtration recovery structure further comprises:
the first end of the vacuum pump is communicated with the outlet of the filtering and depositing tank and is used for extracting the inert gas exhausted from the outlet of the filtering and depositing tank;
and the inert gas recovery structure is communicated with the second end of the vacuum pump and is used for storing the inert gas extracted by the vacuum pump.
In some embodiments, the filtration recovery structure further comprises:
the gas transmission pipeline is arranged between the inert gas recovery structure and the inert gas supply system;
and the inert gas recovery and filtration device is arranged in the gas transmission pipeline and is used for filtering impurity particles and silicon oxide gas in the inert gas.
The invention has the beneficial effects that:
in the embodiment, the exhaust pipeline can exhaust tail gas generated by growth of monocrystalline silicon in the crystal pulling furnace, so that the pressure and temperature in the monocrystalline silicon crystal pulling furnace can be maintained, and the influence of the tail gas on growth of the monocrystalline silicon is avoided; in addition, the filtering and recycling structure recycles the inert gas in the tail gas, and the utilization rate of the inert gas can be improved.
Drawings
FIG. 1 is a schematic view showing a structure of a single crystal growing furnace apparatus according to an embodiment of the present invention.
Reference numerals
1 Crystal pulling furnace
2 Quartz crucible
3 graphite crucible
4 crucible tray
5 crucible shaft
6 exhaust pipe
7 filtering and depositing tank
8 one-way valve
9 Filter screen
10 vacuum pump
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The invention provides a single crystal furnace device which can improve the uniformity of the oxygen content in a single crystal silicon rod.
An embodiment of the present invention provides a single crystal furnace apparatus, as shown in fig. 1, including:
a crystal pulling furnace 1;
a crucible shaft 5 is arranged in the crystal pulling furnace 1, a crucible tray 4 is arranged at the upper end of the crucible shaft 5, the lower end of the crucible shaft 5 penetrates out of the bottom of the crystal pulling furnace 1, a graphite crucible 3 is arranged in the crucible tray 4, a quartz crucible 2 is arranged in the graphite crucible 3, and polycrystalline silicon materials are placed in the quartz crucible 2;
an exhaust pipeline 6 is arranged at the lower part of the crystal pulling furnace 1 and used for exhausting tail gas generated by growth of monocrystalline silicon in the crystal pulling furnace 1;
and the filtering and recycling structure is communicated with the exhaust pipeline 1 and is used for recycling the inert gas in the tail gas and introducing the recycled inert gas into the crystal pulling furnace 1.
In the embodiment, the exhaust pipeline can exhaust tail gas generated by growth of monocrystalline silicon in the crystal pulling furnace, so that the pressure and temperature in the monocrystalline silicon crystal pulling furnace can be maintained, and the influence of the tail gas on growth of the monocrystalline silicon is avoided; in addition, the filtering and recycling structure recycles the inert gas in the tail gas, so that the utilization rate of the inert gas can be improved.
In the embodiment, in the crystal pulling process, a silicon solution is contained in a quartz crucible 2 in a crystal pulling furnace 1, a graphite crucible 3 is arranged outside the quartz crucible 2, and the graphite crucible 3 plays a role in supporting and wrapping the quartz crucible 3, because the quartz crucible 2 can be locally softened at high temperature, and the crucible made of graphite has high strength and structural stability at high temperature, the crucible is beneficial to supporting the quartz crucible 2; meanwhile, because graphite has high heat conductivity coefficient at high temperature, the heat of a heater can be well and uniformly transmitted to a quartz crucible 2, the quartz crucible 2 transfers heat to silicon solution, the liquid level temperature is kept constant, the stable proceeding of the crystal pulling solidification process is facilitated, a crucible tray 4 is arranged below a graphite crucible 3, a crucible shaft 5 is arranged below the crucible tray 4, in order to obtain uniform radial oxygen content in the crystal pulling process, the crucible shaft 5 holds the whole crucible device (comprising the crucible tray, the graphite crucible and the quartz crucible) and the silicon solution to rotate, meanwhile, a crystal bar pulling device drives the crystal bar to rotate at the same rotating speed in the same rotating direction, and the whole crucible device and the crystal bar are kept relatively static, so that the disturbance of the crystal bar to a melt can be well reduced, the generation of turbulence in the melt is reduced, and the uniform soaking of oxygen into the crystal bar is facilitated.
Oxygen in the crystal bar is mainly silicon solution and reacts with the inner layer of the quartz crucible to generate silicon oxide, most of solid particles of the silicon oxide can be volatilized, only a small part of the silicon oxide is immersed into the surface of the crystal bar, and in order to well control the oxygen content in the crystal bar, the pressure in the crystal pulling furnace needs to be accurately controlled; on the other hand, the exhaust gas discharged by the exhaust pipeline can maintain the constant pressure in the furnace, thereby being beneficial to improving the uniformity of the oxygen content in the silicon single crystal rod.
In some embodiments, the filtration recovery structure comprises:
and the first filtering structure is communicated with the exhaust pipeline and is used for filtering the tail gas and separating silicon oxide solid particles and inert gas in the tail gas.
The first filter structure can separate the silica solid particles and the inert gas by designing the filter pores of the first filter structure. As shown in fig. 1, the first filter structure includes:
a filter deposition tank 7, wherein the inlet of the filter deposition tank 7 is communicated with the exhaust pipeline 6, and the filter deposition tank 7 is used for containing the tail gas transmitted by the exhaust pipeline 6;
the filter screen 9 is arranged at the outlet of the filtering and depositing tank 7 and used for filtering out silicon oxide solid particles in the tail gas, and the silicon oxide solid particles are formed by condensation of silicon oxide gas in the tail gas.
After the exhaust pipe 6 discharges, hold in filtering deposition jar 7, from exhaust pipe 6 (set up under the room temperature environment, therefore the temperature is low) enter into filtering deposition jar 7's in-process, the silica gas in the exhaust gas converts the silica solid particle into under the effect of temperature reduction, through the filtration pore of design filter screen 9, can make the filtration pore of filter screen 9 be less than the particle size of silica solid particle, be greater than inert gas's molecular diameter, filter screen 9 can only allow inert gas to pass through like this, thereby filter out silica solid particle in the exhaust gas, inert gas after the filtration gets into the vacuum pump, silica solid particle is hindered by filter screen 9, or imbeds filter screen 9, or drops to filtering deposition jar 7 bottom.
In some embodiments, the diameter of the filtering pores of the filtering net 9 is gradually reduced in the flowing direction of the exhaust gas, so that the solid particles of the silicon oxide can be effectively blocked outside the filtering net 9.
In some embodiments, as shown in fig. 1, the filtration recovery structure comprises:
a weight sensor provided in the filter-deposition tank 7 for detecting the weight of the silica solid particles contained in the filter-deposition tank 7 and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the filtering and depositing tank to vibrate at a preset frequency when the weight data is greater than a set value, wherein the preset frequency can be 700-800 times per minute, so that the silicon oxide solid particles adsorbed on the filter screen 9 can be ensured to fall to the bottom of the filtering and depositing tank 7. Specifically, a vibration motor may be provided on the filter settling tank, and the filter settling tank may be driven to vibrate by the vibration motor.
After receiving certain weight's silica solid particle in filtering sedimentation tank 7 like this, the control unit can control and filter sedimentation tank and vibrate with preset frequency, under the effect of shaking, can make the last adsorbed silica solid particle of filter screen 9 drop to filtering sedimentation tank 7 bottoms to avoid filter screen 9 to block, can not exert the filtering action.
In some embodiments, as shown in fig. 1, the single crystal furnace apparatus further comprises:
a check valve 8 disposed on the filtering and depositing tank 7;
the control unit is also used for controlling the one-way valve to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the filtering and depositing tank.
Thus, oxygen-containing air enters the filtering and depositing tank 7 and can react with tail gas in the filtering and depositing tank 7 to generate stable silicon oxide solid particles, so that unstable silicon oxide gas is converted into stable solid particles.
In some embodiments, the control unit is configured to control a valve opening degree of the check valve according to the weight data, and the valve opening degree of the check valve is proportional to the weight data. Therefore, the more tail gas contained in the filtering and depositing tank 7, the larger the opening degree of the valve of the one-way valve is, and more oxygen-containing air can be introduced to react with the silicon oxide gas; if the tail gas contained in the filtering and depositing tank 7 is less and does not need too much oxygen-containing air, the opening degree of the valve of the one-way valve does not need to be too large, and a small amount of oxygen-containing air is introduced to slowly oxidize the silicon oxide.
In some embodiments, as shown in fig. 1, the outlet of the filtering and depositing tank 7 is disposed above the inlet of the filtering and depositing tank 7 in the vertical direction, and the check valve 8 is disposed below the inlet in the vertical direction, so that when the weight of the silica solid particles contained in the filtering and depositing tank 7 is greater than a predetermined value, the filtering and depositing tank 7 vibrates at a predetermined frequency, and the silica solid particles fall from the filtering net to the bottom of the filtering and depositing tank 7 under the action of the vibration, and at the same time, the check valve 8 is opened, and oxygen-containing air enters the bottom of the filtering and depositing tank 7 to react with the silica gas, so that stable silica solid particles are generated.
In some embodiments, as shown in fig. 1, the filtration recovery structure further comprises:
a vacuum pump 10, a first end of the vacuum pump 10 is communicated with the outlet of the filtering and depositing tank 7, and is used for extracting the inert gas discharged from the outlet of the filtering and depositing tank 7;
and an inert gas recovery structure (not shown) communicating with the second end of the vacuum pump 10 for storing the inert gas extracted by the vacuum pump.
The vacuum pump 10 can extract the inert gas discharged from the outlet of the filtering and depositing tank 7, and since the first filtering structure filters the silicon oxide gas, the vacuum pump 10 can be protected from the corrosion of silicon oxide, and the service life of the vacuum pump 10 can be prolonged.
In some embodiments, the filtration recovery structure may further comprise:
the gas transmission pipeline is arranged between the inert gas recovery structure and the inert gas supply system;
and the inert gas recovery and filtration device is arranged in the gas transmission pipeline and is used for filtering impurity particles in the inert gas.
The inert gas recovery structure can be communicated with the inert gas supply system through a gas transmission pipeline, so that the inert gas is recycled. Before the inert gas enters the inert gas supply system, the inert gas is subjected to secondary filtration by using the inert gas recovery and filtration device, so that the influence of impurity particles on the quality of the inert gas is avoided.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A single crystal furnace apparatus, comprising:
a crystal pulling furnace;
a crucible shaft is arranged in the crystal pulling furnace, a crucible tray is arranged at the upper end of the crucible shaft, the lower end of the crucible shaft penetrates out of the bottom of the crystal pulling furnace, a graphite crucible is arranged in the crucible tray, a quartz crucible is arranged in the graphite crucible, and polycrystalline silicon materials are placed in the quartz crucible;
an exhaust pipeline is arranged at the lower part of the crystal pulling furnace and used for exhausting tail gas generated by the growth of monocrystalline silicon in the crystal pulling furnace;
and the filtering and recycling structure is communicated with the exhaust pipeline and is used for recycling the inert gas in the tail gas and introducing the recycled inert gas into the crystal pulling furnace.
2. The single crystal furnace apparatus of claim 1, wherein the filter recovery structure comprises:
and the first filtering structure is communicated with the exhaust pipeline and is used for filtering the tail gas and separating silicon oxide solid particles and inert gas in the tail gas.
3. The single crystal furnace apparatus of claim 2, wherein the first filtering structure comprises:
the inlet of the filtering and depositing tank is communicated with the exhaust pipeline, and the filtering and depositing tank is used for containing the tail gas transmitted by the exhaust pipeline;
the filter screen that sets up the exit of filtering the sedimentation tank is used for filtering out the silica solid particle in the tail gas, silica solid particle is silica gas in the tail gas meets the condensation and forms.
4. The single crystal furnace device according to claim 3, wherein the diameter of the filter pores of the filter screen is gradually reduced in the flow direction of the off-gas.
5. The single crystal furnace apparatus of claim 3, wherein the filter recovery structure comprises:
a weight sensor provided in the filter deposition tank for detecting a weight of the silica solid particles contained in the filter deposition tank and generating weight data;
and the control unit is connected with the weight sensor and used for receiving the weight data and controlling the filtering and depositing tank to vibrate at a preset frequency when the weight data is greater than a set value.
6. The single crystal furnace apparatus of claim 5, further comprising:
the one-way valve is arranged on the filtering and depositing tank;
the control unit is also used for controlling the one-way valve to be opened when the weight data is larger than a set value, so that oxygen-containing air enters the filtering and depositing tank.
7. The single crystal furnace apparatus according to claim 6,
the control unit is used for controlling the opening and closing degree of the valve of the one-way valve according to the weight data, and the opening and closing degree of the valve of the one-way valve is in direct proportion to the weight data.
8. The single crystal furnace apparatus according to claim 6,
the outlet is arranged above the inlet in the vertical direction, and the one-way valve is arranged below the inlet in the vertical direction.
9. The single crystal furnace apparatus of claim 2, wherein the filter recovery structure further comprises:
the first end of the vacuum pump is communicated with the outlet of the filtering and depositing tank and is used for extracting the inert gas exhausted from the outlet of the filtering and depositing tank;
and the inert gas recovery structure is communicated with the second end of the vacuum pump and is used for storing the inert gas extracted by the vacuum pump.
10. The single crystal furnace apparatus of claim 9, wherein the filter recovery structure further comprises:
the gas transmission pipeline is arranged between the inert gas recovery structure and the inert gas supply system;
and the inert gas recovery and filtration device is arranged in the gas transmission pipeline and is used for filtering impurity particles in the inert gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211562119.9A CN115821383A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
| TW112105791A TW202332498A (en) | 2022-12-07 | 2023-02-17 | Single crystal furnace device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211562119.9A CN115821383A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115821383A true CN115821383A (en) | 2023-03-21 |
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ID=85545354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211562119.9A Pending CN115821383A (en) | 2022-12-07 | 2022-12-07 | Single crystal furnace device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115821383A (en) |
| TW (1) | TW202332498A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117717845A (en) * | 2023-12-19 | 2024-03-19 | 江苏宏基高新材料股份有限公司 | Graphite processing dust pelletizing system |
| CN117717845B (en) * | 2023-12-19 | 2024-06-04 | 江苏宏基高新材料股份有限公司 | Graphite processing dust pelletizing system |
-
2022
- 2022-12-07 CN CN202211562119.9A patent/CN115821383A/en active Pending
-
2023
- 2023-02-17 TW TW112105791A patent/TW202332498A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117717845A (en) * | 2023-12-19 | 2024-03-19 | 江苏宏基高新材料股份有限公司 | Graphite processing dust pelletizing system |
| CN117717845B (en) * | 2023-12-19 | 2024-06-04 | 江苏宏基高新材料股份有限公司 | Graphite processing dust pelletizing system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202332498A (en) | 2023-08-16 |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |