CN115945372A - Semiconductor aluminum plate processing technology - Google Patents
Semiconductor aluminum plate processing technology Download PDFInfo
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- CN115945372A CN115945372A CN202211605526.3A CN202211605526A CN115945372A CN 115945372 A CN115945372 A CN 115945372A CN 202211605526 A CN202211605526 A CN 202211605526A CN 115945372 A CN115945372 A CN 115945372A
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- semiconductor substrate
- semiconductor
- processing technology
- polyimide
- aluminum plate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductor aluminum, which is characterized in that after a semiconductor substrate is fixed on a workbench, the bottom of the semiconductor substrate is blown to be flat, the semiconductor substrate is added into cleaning solution to be cleaned, after the cleaning is finished, the semiconductor substrate is placed in an oven to be heated and dried, and after the drying, the semiconductor aluminum plate processing technology is disclosed, the semiconductor substrate is blown to be flat through uniformly distributed inert airflow, then the semiconductor substrate is cleaned through the cleaning solution, then the semiconductor substrate is placed in the oven to be heated and blown for thirty minutes to be dried, then polyimide is coated on the top of the semiconductor substrate, stress adjustment is carried out on the semiconductor substrate, the semiconductor substrate is prevented from being warped again, the polyimide is removed through oxygen plasma, finally the polyimide and a carrier plate are placed in a high-temperature furnace at the pressure of 5000N and the temperature of 200 ℃, and are permanently carried out, so that the effect of strong bonding force is achieved, and the stability of the semiconductor aluminum plate is enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductor aluminum plates, in particular to a semiconductor aluminum plate processing technology.
Background
The semiconductor is a substance with conductivity between insulator and conductor, which is easy to control, and can be used as a component material for information processing, and is very important from the viewpoint of technology or economic development, the core units of many electronic products, such as computers, mobile phones, and digital recorders, utilize the conductivity change of the semiconductor to process information, the common semiconductor materials are silicon, germanium, gallium arsenide, etc., and silicon is the most influential one of various semiconductor materials in commercial applications, and the silicon-based semiconductor spin qubit has long quantum decoherence time and high manipulation fidelity, and high scalability compatible with modern semiconductor process technology, and is one of the core directions of quantum computing research.
The existing semiconductor method may cause the problem that the chemical stability is reduced due to insufficient adhesive force of the adhesive during the production, the adhesive effect is not good, and the semiconductor component may be damaged after the production is finished.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a semiconductor aluminum plate processing technology which has the advantages of strong stability, difficult falling and the like and solves the problem that the chemical stability of the existing semiconductor is reduced due to the insufficient adhesive acting force of an adhesive.
(II) technical scheme
2. In order to achieve the purposes of strong stability and difficult falling, the invention provides the following technical scheme: a semiconductor aluminum plate processing technology is characterized by comprising the following steps:
1) After the semiconductor substrate is fixed on the workbench, the semiconductor substrate is blown flat by blowing air to the bottom of the semiconductor substrate;
2) Cleaning by adding the semiconductor substrate into a cleaning solution;
3) After cleaning, putting the semiconductor substrate in an oven for heating and drying;
4) After drying, gluing the semiconductor substrate, curing the semiconductor substrate, and bonding the carrier plate and the semiconductor substrate into a whole under the condition of certain pressure and temperature;
5) After the film is solidified, removing the film on the glue;
6) The semiconductor substrate and the carrier plate are placed in a high-temperature furnace to be heated to form a permanent body.
Preferably, in the step 1), the bottom of the semiconductor substrate is blown flat by inert gas, and the semiconductor substrate is made of aluminum.
Preferably, the cleaning solution in step 2) is DIW.
Preferably, the oven in the step 3) is set to 80 ℃, and the heating and drying time is 30min.
Preferably, the glue in the step 4) is polyimide, and the curing temperature of the polyimide is 350 ℃.
Preferably, the polyimide is dissolved and removed in the step 5) by oxygen plasma or a highly polar solvent.
Preferably, in the step 6), the bonding pressure of the semiconductor substrate and the carrier plate is 5000N, and the temperature is 200 ℃.
(III) advantageous effects
Compared with the prior art, the invention provides a semiconductor aluminum plate processing technology, which has the following beneficial effects:
this semiconductor aluminum plate processing technology blows the semiconductor substrate through the even inert gas flow of distribution and flattens, then the semiconductor substrate is washd to the washing liquid, then the semiconductor substrate is placed and is dried in the inside heating of oven blowing thirty minutes, then with semiconductor substrate top coating polyimide, carry out stress adjustment to the semiconductor substrate, prevent that the semiconductor substrate from taking place the warpage once more, say and remove polyimide through oxygen plasma, place polyimide and support plate in the high temperature furnace pressure at last and be 5000N, temperature 200 degrees, it is permanent, thereby reach the stronger effect of adhesion, make its steadiness grow stronger.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows: a semiconductor aluminum plate processing technology is characterized by comprising the following steps:
1) After the semiconductor substrate is fixed on the workbench, the semiconductor substrate is blown flat by blowing air to the bottom of the semiconductor substrate;
2) Cleaning by adding the semiconductor substrate into a cleaning solution;
3) After cleaning, putting the semiconductor substrate in an oven for heating and drying;
4) After drying, gluing the semiconductor substrate, curing the semiconductor substrate, and bonding the carrier plate and the semiconductor substrate into a whole under the condition of certain pressure and temperature;
5) After the film is solidified, removing the film on the glue;
6) The semiconductor substrate and the carrier plate are placed in a high temperature furnace to be heated to form a permanent body.
Blowing gas to the bottom of the semiconductor substrate through inert gas in the step 1) to blow the bottom of the semiconductor substrate flat, wherein the semiconductor substrate is made of aluminum.
The cleaning liquid in the step 2) is DIW.
The temperature of the oven in the step 3) is set to 80 ℃, and the heating and drying time is 30min.
The glue in the step 4) is polyimide, and the curing temperature of the polyimide is 350 ℃.
In the step 5), the polyimide is dissolved and removed by oxygen plasma or a high-polarity solvent.
And 6) bonding the semiconductor substrate and the carrier plate at the same time under the pressure of 5000N and at the temperature of 200 ℃.
The second embodiment: a semiconductor aluminum plate processing technology is characterized by comprising the following steps:
a semiconductor aluminum plate processing technology is characterized by comprising the following steps:
1) After the semiconductor substrate is fixed on the workbench, the semiconductor substrate is blown flat by blowing air to the bottom of the semiconductor substrate;
2) Cleaning by adding the semiconductor substrate into a cleaning solution;
3) After cleaning, putting the semiconductor substrate in an oven for heating and drying;
4) After drying, gluing the semiconductor substrate, curing the semiconductor substrate, and bonding the carrier plate and the semiconductor substrate into a whole under the condition of certain pressure and temperature;
5) After the film is solidified, removing the film on the glue;
6) The semiconductor substrate and the carrier plate are placed in a high-temperature furnace to be heated to form a permanent body.
Blowing gas to the bottom of the semiconductor substrate through inert gas in the step 1) to blow the bottom of the semiconductor substrate flat, wherein the semiconductor substrate is made of aluminum.
The cleaning liquid in the step 2) is DIW.
The temperature of the oven in the step 3) is set to be 90 ℃, and the heating and drying time is 30min.
The glue in the step 4) is polyimide, and the curing temperature of the polyimide is 400 ℃.
In the step 5), the polyimide is dissolved and removed by oxygen plasma or a high-polarity solvent.
And 6) bonding the semiconductor substrate and the carrier plate at the same time under the pressure of 5500N and the temperature of 250 ℃.
Example three: a semiconductor aluminum plate processing technology is characterized by comprising the following steps:
1) After the semiconductor substrate is fixed on the workbench, the semiconductor substrate is blown flat by blowing air to the bottom of the semiconductor substrate;
2) Cleaning by adding the semiconductor substrate into a cleaning solution;
3) After cleaning, putting the semiconductor substrate in an oven for heating and drying;
4) After drying, gluing the semiconductor substrate, curing the semiconductor substrate, and bonding the carrier plate and the semiconductor substrate into a whole under the condition of certain pressure and temperature;
5) After the film is solidified, removing the film on the glue;
6) The semiconductor substrate and the carrier plate are placed in a high-temperature furnace to be heated to form a permanent body.
Blowing gas to the bottom of the semiconductor substrate through inert gas in the step 1) to blow the bottom of the semiconductor substrate flat, wherein the semiconductor substrate is made of aluminum.
The cleaning liquid in the step 2) is DIW.
The temperature of the oven in the step 3) is set to be 100 ℃, and the heating and drying time is 30min.
The glue in the step 4) is polyimide, and the curing temperature of the polyimide is 450 ℃.
In the step 5), the polyimide is dissolved and removed by oxygen plasma or a high-polarity solvent.
And 6) bonding the semiconductor substrate and the carrier plate at the same time under 6000N and 300 ℃.
The invention has the beneficial effects that: blow the semiconductor substrate through the even inert gas flow of distribution and tie, then the semiconductor substrate is washd to the washing liquid, then the semiconductor substrate is placed in the inside heating of oven and is blown thirty minutes and dry, then with the polyimide of semiconductor substrate top coating, carry out stress adjustment to the semiconductor substrate, prevent that the semiconductor substrate from taking place the warpage once more, say and remove the polyimide through oxygen plasma, place polyimide and support plate in the high temperature furnace pressure at 5000N at last, the temperature 200 degrees, carry out permanent bonding, thereby reach the stronger effect of bonding force, make its steadiness grow stronger.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A semiconductor aluminum plate processing technology is characterized by comprising the following steps:
1) After the semiconductor substrate is fixed on the workbench, the semiconductor substrate is blown flat by blowing air to the bottom of the semiconductor substrate;
2) Cleaning by adding the semiconductor substrate into a cleaning solution;
3) After cleaning, putting the semiconductor substrate in an oven for heating and drying;
4) After drying, gluing the semiconductor substrate, curing the semiconductor substrate, and bonding the carrier plate and the semiconductor substrate into a whole under the condition of certain pressure and temperature;
5) After the film is solidified, removing the film on the glue;
6) The semiconductor substrate and the carrier plate are placed in a high-temperature furnace to be heated to form a permanent body.
2. The processing technology of claim 1, wherein in 1), the bottom of the semiconductor substrate is blown flat by inert gas, and the semiconductor substrate is made of aluminum.
3. The aluminum semiconductor plate processing technology of claim 1, wherein the cleaning solution of step 2) is DIW.
4. The semiconductor aluminum plate processing technology of claim 1, wherein the step 3) oven is set at 80 degrees, and the heating and drying time is 30min.
5. The processing technology of claim 1, wherein the glue in step 4) is polyimide, and the curing temperature of the polyimide is 350 ℃.
6. The process for manufacturing a semiconductor aluminum plate as recited in claim 1, wherein in the step 5), the polyimide is removed by oxygen plasma or high-polarity solvent dissolution.
7. The processing technology of a semiconductor aluminum plate as recited in claim 1, wherein the bonding pressure of the semiconductor substrate and the carrier plate in step 6) is 5000N and the temperature is 200 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211605526.3A CN115945372A (en) | 2022-12-14 | 2022-12-14 | Semiconductor aluminum plate processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211605526.3A CN115945372A (en) | 2022-12-14 | 2022-12-14 | Semiconductor aluminum plate processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115945372A true CN115945372A (en) | 2023-04-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211605526.3A Pending CN115945372A (en) | 2022-12-14 | 2022-12-14 | Semiconductor aluminum plate processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115945372A (en) |
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2022
- 2022-12-14 CN CN202211605526.3A patent/CN115945372A/en active Pending
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