CN115942860B - Magnetic sensitive film transfer method and magnetic sensitive device - Google Patents
Magnetic sensitive film transfer method and magnetic sensitive device Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000012546 transfer Methods 0.000 title claims abstract description 48
- 239000010410 layer Substances 0.000 claims abstract description 452
- 239000000758 substrate Substances 0.000 claims abstract description 281
- 239000011241 protective layer Substances 0.000 claims abstract description 159
- 239000002346 layers by function Substances 0.000 claims abstract description 87
- 239000010408 film Substances 0.000 claims description 118
- 239000010409 thin film Substances 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 230000005293 ferrimagnetic effect Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 21
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 20
- 239000000395 magnesium oxide Substances 0.000 claims description 20
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 230000005641 tunneling Effects 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- -1 magnesium aluminate Chemical class 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 238000004590 computer program Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 14
- 238000003860 storage Methods 0.000 abstract description 12
- 229910003266 NiCo Inorganic materials 0.000 description 19
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000005355 Hall effect Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 229910003321 CoFe Inorganic materials 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010023 transfer printing Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052596 spinel Inorganic materials 0.000 description 5
- 239000011029 spinel Substances 0.000 description 5
- 229910020068 MgAl Inorganic materials 0.000 description 4
- 230000002547 anomalous effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003264 NiFe2O4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NQNBVCBUOCNRFZ-UHFFFAOYSA-N nickel ferrite Chemical compound [Ni]=O.O=[Fe]O[Fe]=O NQNBVCBUOCNRFZ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- Thin Magnetic Films (AREA)
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Abstract
The present application relates to a magnetically sensitive film transfer method, apparatus, computer device, storage medium, computer program product and magnetically sensitive device. The method comprises the following steps: growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer; bonding the second substrate layer with the second protective layer; the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. The whole magnetic sensitive film transfer process is based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, the sacrificial layer is damaged through laser irradiation, a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer can be realized by adopting the method.
Description
Technical Field
The present application relates to the field of magnetically sensitive film transfer technology, and in particular, to a magnetically sensitive film transfer method, apparatus, computer device, storage medium, and computer program product.
Background
The magnetic material is a material with important functions and has wide application in the fields of driving, energy conversion, information sensing, information processing, information storage and the like. The magnetic materials are various, and oxide magnetic sensitive films, especially ferrimagnetic semi-metal oxide films such as Fe3O4 and NiFe2O4, are expected to be used as materials of a new generation of ultra-fast magnetic sensitive sensors because of the spin polarization rate and the subpicosecond magnetic turnover rate which are close to 100% in theory.
With the development of internet of things technology, wearable and implantable technology, flexible magnetically sensitive films are beginning to receive more and more attention. In recent years, the preparation method of the flexible magnetic sensitive film has made a major breakthrough, but the preparation of the high-quality flexible oxide functional film still faces some challenges: first, the preparation of high quality oxides often requires high temperature conditions, and most organic flexible substrates cannot withstand high temperatures above 300 ℃; second, the oxide film has brittleness and is difficult to withstand large deformation. Therefore, it is necessary to use a rigid material such as glass, sapphire, silicon wafer, etc. as a mounting substrate in the early stage of manufacturing, and then complete the transfer of the device to the flexible substrate by a later peeling process.
The traditional magnetic sensitive film transfer method, such as a chemical etching method, is easy to damage the structure of the film, so that the magnetic sensitivity is changed after the film is transferred, and the defect that the magnetic sensitive film transfer is unreliable exists.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a reliable magnetically sensitive thin film transfer method, apparatus, computer device, computer readable storage medium and computer program product.
In a first aspect, the present application provides a method of magnetically sensitive film transfer. The method comprises the following steps:
growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer;
Bonding the second substrate layer with the second protective layer;
The sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
In one embodiment, the forbidden band width of the sacrificial layer is smaller than the strippable forbidden band width provided by the excimer laser correspondingly, and the forbidden band widths of the first substrate layer and the second substrate layer are respectively larger than the strippable forbidden band width, and the strippable forbidden band width is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film, a tunneling magneto-resistance type multilayer film structure or a giant magneto-resistance type multilayer film structure with strong abnormal Hall effect; the tunneling magneto-resistance type multilayer thin film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
In one embodiment, growing an oxide epitaxial magnetically sensitive thin film layer on a first substrate layer comprises:
An oxide epitaxial magnetically sensitive thin film layer is grown on the first substrate layer by magnetron sputtering or pulsed laser deposition.
In one embodiment, the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
In one embodiment, the first structure is sequentially a first protective layer, a magnetically sensitive functional layer, a second protective layer and a second substrate layer from bottom to top; the magnetic sensitive film transferring method further comprises the following steps:
combining the first protective layer in the first structure with the third substrate layer to obtain a second structure;
Pressing the second structure based on the second substrate layer and the third substrate layer;
and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
In one embodiment, the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
In one embodiment, the sacrificial layer has a thickness of 200nm to 1 μm.
In one embodiment, the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the energy density of the laser is 100-300 mJ/cm 2.
In one embodiment, the first and second substrate layers are MgO or MgAl 2O4 and the sacrificial layer is CoFe 2O4.
In a second aspect, the present application also provides a magnetically sensitive device. The magnetic sensitive device is prepared by the magnetic sensitive film transfer method.
In a third aspect, the application also provides a magnetically sensitive film transfer device. The device comprises:
the film layer growth module is used for growing an oxide epitaxial magnetic sensitive film layer on the first substrate layer, and the oxide epitaxial magnetic sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
A substrate layer bonding module for bonding the second substrate layer with the second protective layer;
And the substrate layer separation module is used for damaging the sacrificial layer through excimer laser irradiation so as to separate a first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer from the first substrate layer.
In a fourth aspect, the present application also provides a computer device. The computer device comprises a memory storing a computer program and a processor which when executing the computer program performs the steps of:
growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer;
Bonding the second substrate layer with the second protective layer;
The sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
In a fifth aspect, the present application also provides a computer-readable storage medium. The computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of:
growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer;
Bonding the second substrate layer with the second protective layer;
The sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
In a sixth aspect, the application also provides a computer program product. The computer program product comprises a computer program which, when executed by a processor, implements the steps of:
growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer;
Bonding the second substrate layer with the second protective layer;
The sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
The magnetic sensitive film transfer method, the device, the computer equipment, the storage medium, the computer program product and the magnetic sensitive device are characterized in that an oxide epitaxial magnetic sensitive film layer is grown on a first substrate layer, and the oxide epitaxial magnetic sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding the second substrate layer with the second protective layer; the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. The whole magnetic sensitive film transfer process is based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
Drawings
FIG. 1 is a diagram of an application environment for a magnetically sensitive film transfer method in one embodiment;
FIG. 2 is a flow chart of a method of transferring magnetically sensitive films in one embodiment;
FIG. 3 is a schematic diagram of a structure for growing a magnetically susceptible thin film on a first substrate layer in one embodiment;
FIG. 4 is a schematic diagram of a structure of combining a second passivation layer with a second substrate layer according to one embodiment;
FIG. 5 is a schematic diagram of a structure for separating a magnetically susceptible thin film layer and a first substrate layer in one embodiment;
FIG. 6 is a schematic diagram of a structure in which a magnetically susceptible film is bonded to a third substrate layer in one embodiment;
FIG. 7 is a schematic diagram of a structure for peeling a second substrate layer to effect film transfer in one embodiment;
FIG. 8 is a block diagram of an anomalous Hall magnetic sensor transferred to a second substrate layer in one embodiment;
FIG. 9 is a block diagram of an anomalous Hall magnetic sensor transferred to a third substrate layer in one embodiment;
FIG. 10 is a block diagram of a tunneling magneto-resistive magnetic sensing device transferred to a third substrate layer in another embodiment;
FIG. 11 is a graph of abnormal Hall effect test comparison in one embodiment;
FIG. 12 is a block diagram of a magnetically susceptible film transfer apparatus in one embodiment;
fig. 13 is an internal structural view of a computer device in one embodiment.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The magnetic sensitive film transfer method provided by the embodiment of the application can be applied to an application environment shown in figure 1. Wherein the terminal 100 communicates with the server 200 through a network. The data storage system may store data that the server 200 needs to process. The data storage system may be integrated on the server 200 or may be located on a cloud or other network server. The user operates on the terminal 100 side, and the terminal 100 responds to the user operation, thereby realizing reliable magnetic sensitive film transfer.
Specifically, the terminal 100 grows an oxide epitaxial magnetically sensitive thin film layer on the first substrate layer in response to a user operation, the oxide epitaxial magnetically sensitive thin film layer including a sacrificial layer, a first protective layer, a magnetically sensitive functional layer, and a second protective layer in this order; bonding the second substrate layer with the second protective layer; the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. Among them, the terminal 100 may be, but is not limited to, various personal computers, notebook computers, and tablet computers. The server 200 may be implemented as a stand-alone server or as a server cluster composed of a plurality of servers.
In one embodiment, as shown in fig. 2, a method for transferring a magnetically sensitive film is provided, which is illustrated by taking the terminal 100 in fig. 1 as an example, and includes the following steps:
S100: and growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer.
The first substrate layer is made of a single crystal substrate material with a forbidden bandwidth larger than the first forbidden bandwidth, and specifically can be magnesium aluminate (MgAl 2O4) with a 001 crystal face orientation or magnesium oxide (MgO) with a 001 crystal face orientation. The magnetically sensitive functional layer may be an oxide semi-metallic film with perpendicular magnetic anisotropy and anomalous hall effect, and specifically may be nickel cobaltate (NiCo 2O4), ferroferric oxide (Fe 3O4) or strontium tantalum lanthanum aluminate ((La, sr) (Mn, ru) O 3), etc.
Referring to fig. 3, a magnetically sensitive epitaxial thin film layer 102 is first deposited on a first substrate layer 101. Specifically, an oxide-epitaxial magnetically sensitive thin film layer 102 is grown on the first substrate layer 101, and the oxide-epitaxial magnetically sensitive thin film layer 102 includes, in order from bottom to top, a sacrificial layer 103, a first protective layer 104, a magnetically sensitive functional layer 105, and a second protective layer 106.
S200: the second substrate layer is bonded to the second protective layer.
The second substrate is made of an organic flexible material with an adhesive coating or a certain adhesive force, and can be polyimide or polydimethylsiloxane.
Referring to fig. 4, after the magnetically sensitive epitaxial thin film layer 102 is deposited on the first substrate layer 101, the second substrate layer 102 is combined with the second protective layer 106 by using methods such as adsorption, adhesion or bonding, so as to prevent the second protective layer 106 from being damaged in the subsequent lamination process.
S300: the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
Wherein an excimer laser may be used to release the laser radiation to destroy the sacrificial layer.
Referring to fig. 5, the sacrificial layer 103 is broken by excimer laser irradiation so that the first structure formed by the second substrate layer 107, the second protective layer 106, the magnetically susceptible functional layer 105, and the first protective layer 104 is separated from the first substrate layer 101.
According to the magnetic sensitive film transfer method, an oxide epitaxial magnetic sensitive film layer is grown on a first substrate layer and sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding the second substrate layer with the second protective layer; the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. The whole magnetic sensitive film transfer process is based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the forbidden band width of the sacrificial layer is smaller than the strippable forbidden band width provided by the excimer laser correspondingly, and the forbidden band widths of the first substrate layer and the second substrate layer are respectively larger than the strippable forbidden band width, and the strippable forbidden band width is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film, a tunneling magneto-resistance type multilayer film structure or a giant magneto-resistance type multilayer film structure with strong abnormal Hall effect; the tunneling magneto-resistance type multilayer thin film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
To make the bound electrons free electrons or holes, enough energy must be obtained to transition from the valence band to the conduction band, the minimum value of this energy is the forbidden band width, and the strippable forbidden band width provided by the excimer laser in this embodiment can be set to be 4.02eV or 5.0eV. The forbidden bandwidth of the sacrificial layer is smaller than the strippable forbidden bandwidth provided by the excimer laser correspondingly, so that the excimer laser can be ensured to be separated from the first substrate layer by destroying the sacrificial layer, so that a first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer is separated from the first substrate layer; the forbidden band widths of the first substrate layer and the second substrate layer are larger than the forbidden band width which can be stripped, so that the excimer laser can damage the sacrificial layer and the first substrate layer and the second substrate layer at the same time.
When a current is passed through the conductor perpendicular to the external magnetic field, a potential difference occurs between the two end faces of the conductor perpendicular to the magnetic field and the direction of the current, a phenomenon known as the hall effect. The abnormal Hall effect, namely the Hall effect which can be observed without an external magnetic field, can be further free from the constraint of a strong magnetic field by utilizing the abnormal Hall effect, and realizes the miniaturization of high-performance electronic devices.
In this embodiment, by making the forbidden band width of the sacrificial layer smaller than the strippable forbidden band width provided by the excimer laser, and making the forbidden band widths of the first substrate layer and the second substrate layer larger than the strippable forbidden band width provided by the excimer laser, the structures of the first substrate layer and the second substrate layer are not damaged when the sacrificial layer is damaged by the laser stripping technology, and reliable magnetic sensitive film transfer is realized.
In one embodiment, growing an oxide epitaxial magnetically sensitive thin film layer on a first substrate layer comprises: an oxide epitaxial magnetically sensitive thin film layer is grown on the first substrate layer by magnetron sputtering or pulsed laser deposition.
Referring to fig. 3, the oxide epitaxial magnetically sensitive thin film layer grown on the first substrate includes a sacrificial layer 103, a first protective layer 104, a magnetically sensitive functional layer 105 and a second protective layer 106, and the first substrate layer 101, the sacrificial layer 103, the first protective layer 104, the magnetically sensitive functional layer 105 and the second protective layer 106 all satisfy good lattice matching and epitaxial relationship. The oxide film 102 is grown by magnetron sputtering or pulsed laser deposition. The magnetron sputtering method has the advantages of high speed, low temperature and low damage, and the pulse laser deposition has the advantage of good component retention.
In the embodiment, a magnetic oxide film with high crystallization quality is grown on the first substrate layer through good lattice matching and epitaxial relation among the first substrate layer, the sacrificial layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer; the quality of the high-crystallization multilayer film material is ensured again by the magnetron sputtering and the pulse laser precipitation method, and the reliable magnetic sensitive film transfer is realized.
In one embodiment, the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
The complex oxide has rich performances, the coupling effect among magnetism, electricity, force, heat and various properties provides a new opportunity for realizing the flexible multifunctional electromagnetic device, in the process of preparing the flexible magnetic sensitive film, the terminal substrate material is difficult to bear high-temperature process links such as deposition, evaporation and the like, and extremely easy damage and deformation are always common problems in the manufacturing technology of the flexible magnetic sensitive film, rigid materials such as glass, sapphire, silicon chips and the like are required to be taken as carrying substrates in the early stage of manufacturing, and the device is transferred to the flexible substrate through the later stage of stripping process. In the embodiment, the second substrate layer is used as a transition layer for intermediate transfer, firstly, the oxide epitaxial magnetically sensitive film layer grown on the first substrate layer is transferred to the second substrate layer, and then the second substrate layer is torn off after the first protective layer and the third substrate layer are pressed together, so that the second protective layer is ensured not to be damaged.
In this embodiment, an organic flexible substrate layer including polyimide or polydimethylsiloxane is used as the second substrate layer, an oxide epitaxial magnetically sensitive film layer grown on the first substrate layer is transferred onto the second substrate layer, and then the second substrate layer is torn off after the first protective layer and the third substrate layer are laminated, so that the second protective layer is ensured not to be damaged, and reliable magnetically sensitive film transfer is realized.
In one embodiment, the first structure is sequentially a first protective layer, a magnetically sensitive functional layer, a second protective layer and a second substrate layer from bottom to top; the method further comprises the steps of: combining the first protective layer in the first structure with the third substrate layer to obtain a second structure; pressing the second structure based on the second substrate layer and the third substrate layer; and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
In order to achieve silicon integration of oxide magnetically sensitive films or placement on any substrate, it is necessary to transfer the film from the second substrate to the third substrate. Specifically, a nano transfer printing method can be adopted, one surface of the first protective layer is pressed with the upper surface of the third substrate, the pressing is continued for 10 minutes under the pressure of 1MPa, the pressure is removed, and then the second substrate is torn off, so that the magnetic sensitive multilayer film structure transferred onto the third substrate can be obtained. The structure is from bottom to top: the magnetic sensor comprises a third substrate, a first protective layer, a magnetically sensitive functional layer and a second protective layer.
Specifically, a first structure of the second substrate layer 107, the second protective layer 106, the magnetically sensitive functional layer 105, and the first protective layer 104 from top to bottom is obtained based on the laser lift-off technique. As shown in fig. 6, the first structure is first bonded to the third substrate layer 108. And then, continuously pressing the first structure and the third substrate layer 108 for 10 minutes under the pressure of 1MPa by adopting a nano transfer printing method, and removing the pressure to obtain a second structure of the third substrate layer 108, the first protective layer 104, the magnetically sensitive functional layer 105, the second protective layer 106 and the second substrate layer 107 from bottom to top. As shown in fig. 7, since the second substrate layer is bonded to the second protective layer 106 in advance based on adsorption, adhesion or bonding, the second substrate layer 107 is finally torn off, so that the magnetically sensitive multilayer film structure including the first protective layer 104, the magnetically sensitive functional layer 105, and the second protective layer 106 transferred onto the third substrate layer 108 can be obtained.
In this embodiment, based on the nano transfer printing method, the first structure composed of the second substrate layer, the second protection layer, the magnetic sensitive functional layer and the first protection layer is pressed with the third substrate layer to obtain the second structure of the third substrate layer, the first protection layer, the magnetic sensitive functional layer, the second protection layer and the second substrate layer from bottom to top, and then the second substrate layer is torn off from the second protection layer, so that the magnetic sensitive multilayer film structure transferred onto the third substrate layer and comprising the first protection layer, the magnetic sensitive functional layer and the second protection layer can be obtained, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
The oxide film is transferred from the second substrate layer to the third substrate layer by adopting a nano transfer printing method, so that the third substrate layer adopts a flexible or rigid substrate layer with an atomically flat surface, and the lower surface of the first protective layer can be pressed with the upper surface of the third substrate layer more tightly.
Specifically, a first structure consisting of a second substrate layer, a second protective layer, a magnetic sensitive functional layer and a first protective layer and a third substrate layer with a flat atomic-level surface are continuously pressed for 10 minutes under the pressure of 1MPa by adopting a nano transfer printing method, and the pressure is removed to obtain a second structure of the third substrate layer, the first protective layer, the magnetic sensitive functional layer, the second protective layer and the second substrate layer from bottom to top.
In this embodiment, the flexible or rigid substrate layer with a flat atomic-level surface is used as the third substrate layer, so that the first structure formed by the second substrate layer, the second protection layer, the magnetic sensitive functional layer and the first protection layer is pressed more tightly with the third substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the sacrificial layer has a thickness of 200nm to 1 μm.
The thickness of the sacrificial layer is generally 200 nm-1 μm because the sacrificial layer needs to ensure that the laser does not damage the magnetically sensitive functional layer and accords with the epitaxial characteristic of the superlattice multilayer heterostructure. Under the condition that the thickness of the sacrificial layer is 200 nm-1 mu m, the excimer laser can be ensured to break the sacrificial layer, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and meanwhile, the excimer laser can be ensured not to damage the magnetic sensitive functional layer.
In this embodiment, by controlling the growth thickness of the sacrificial layer to be 200nm to 1 μm, it is ensured that the laser can damage the sacrificial layer, so that the first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer is separated from the first substrate layer, and meanwhile, it is ensured that the laser does not damage the magnetically sensitive functional layer, thereby realizing reliable magnetically sensitive film transfer.
In one embodiment, the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the energy density of the laser is 100-300 mJ/cm 2.
In order for the bound electrons to become free electrons or holes, sufficient energy must be obtained to transition from the valence band to the conduction band, the minimum of this energy being the forbidden band width, and in the present application the sacrificial layer is destroyed by the excimer laser such that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. Since the strippable forbidden band width provided by the excimer laser correspondingly can be set to be 4.02eV or 5.0eV, the uniformity of the excimer laser is required to be higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2. Specifically, the present application relates to a method for manufacturing a semiconductor device. The uniformity of the excimer laser can be measured by processing a window.
In this embodiment, in order to ensure that the sacrificial layer can be damaged by the excimer laser, so as to separate the first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer from the first substrate layer, the uniformity of the excimer laser needs to be higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2, thereby realizing reliable magnetically sensitive film transfer.
In one embodiment, the first and second substrate layers are MgO or MgAl 2O4 and the sacrificial layer is CoFe 2O4.
Referring to fig. 5, in the process of implementing the transfer of the magnetically sensitive thin film using the laser lift-off technique, the first and second substrate layers 101 and 107 may be selected from oxides having magnetic, electric, force, heat, and coupling effects between various properties, such as magnesium oxide (MgO) or magnesium aluminate (MgAl 2O4); the sacrificial layer may be cobalt ferrite (CoFe 2O4) which can be destroyed by excimer laser irradiation. The protective layer may be selected from the same insulating material as the substrate to reduce strain damage during laser lift-off.
Specifically, there are three combinations of choice of materials between the layers. One of the combinations is that the first substrate layer and the second substrate layer are both made of magnesium oxide (MgO), the sacrificial layer is made of cobalt ferrite (CoFe 2O4), the first protective layer is made of magnesium oxide (MgO), the magnetically sensitive functional layer is made of ferroferric oxide (Fe 3O4), and the second protective layer is made of magnesium oxide (MgO), wherein all materials are in 001 crystal plane orientation.
The second combination is that the first substrate layer and the second substrate layer are both made of magnesium aluminate (MgAl 2O4), the sacrificial layer is made of nickel cobaltate (NiCo 2O4) with Ruddlesden-Popper structure, the first protective layer is made of magnesium aluminate (MgAl 2O4), the magnetically sensitive functional layer is made of nickel cobaltate (NiCo 2O4) with spinel structure, the second protective layer is made of magnesium aluminate (MgAl 2O4), and all materials are in 001 crystal plane orientation. The growth temperature of the sacrificial layer Ruddlesden-Popper structure NiCo 2O4 is more than 450 ℃, and the growth temperature of the magnetically sensitive functional layer spinel structure NiCo 2O4 is 350 ℃, so that the insulativity of the sacrificial layer and the conductive magnetically sensitive property of the functional layer are ensured. The thickness of the spinel structure NiCo 2O4 of the magnetically sensitive functional layer is not more than 20nm so as to ensure the linear sensitive response of the spinel structure NiCo 2O4 to a magnetic field.
The third combination is that the first substrate layer and the second substrate layer are both made of magnesium aluminate (MgAl 2O4), the sacrificial layer is made of nickel cobaltate (NiCo 2O4) with Ruddlesden-Popper structure, the first protective layer is made of magnesium aluminate (MgAl 2O4), the magnetically sensitive functional layer is made of nickel cobaltate (NiCo 2O4) or magnesium aluminate (MgAl 2O4) with tunnel junction sandwich structure, the second protective layer is made of magnesium aluminate (MgAl 2O4), and all materials are oriented in a 001 crystal face. The tunnel junction sandwich structure is composed of a ferrimagnetic free layer NiCo 2O4 with the thickness of not more than 20nm, an insulating tunneling layer MgAl 2O4 with the thickness of 5-20 nm and a ferrimagnetic pinning layer with the thickness of more than 25 nm.
In another embodiment, as shown in fig. 8, if the flexible thin film device on the second substrate layer 107 needs to be put into use for the magnetic sensitivity test, before the thin film device is transferred from the first substrate layer 101 to the second substrate layer 107, the electrode lead 110 needs to be made on the surface of the second substrate layer 107 by sputtering or brushing a conductive coating, so that the reserved electrode layer 109 and the electrode lead 110 are together, and then the performance test of the magnetic sensor can be performed by leading out the electrode.
In another embodiment, as shown in fig. 8, if the flexible thin film device is required to be transferred to the third substrate layer and then subjected to the magnetic sensitivity test, after the thin film device is transferred from the second substrate layer 107 to the third substrate layer, a conductive coating or surface sputtering is brushed on the surface of the reserved electrode layer 109 to draw out the electrode, and then the magnetic test is performed.
In another embodiment, as shown in FIG. 9, the applied magnetic field is perpendicular to the surface of the substrate, and the applied magnetic field is calculated by applying a current in the x-direction of the graph and measuring the Hall voltage in the y-direction. In the linear interval of the magnetic sensitive film device, the Hall voltage of the sensor is proportional to the magnetic field.
In another embodiment, as shown in FIG. 10, the magnetically susceptible functional layer multilayer film structure needs to be patterned to perform the magnetic sensing function prior to the laser lift-off process. Specifically, it is necessary to prepare a nickel cobaltate (NiCo 2O4) layer as a magnetically sensitive functional layer into a step structure by photolithography, and reserve a bottom electrode layer 111 and a top electrode layer 113 when a thin film is grown, and then grow a second protective layer 106 over the device. In this embodiment, the flexible thin film device needs to be transferred to the third substrate layer and then subjected to a magnetic sensitivity test, and at this time, the magnetic resistance change under the applied magnetic field can be measured after the electrode layer 111 and the electrode layer 113 are led out.
In another embodiment, as shown in fig. 11, the hall voltage change plot of the nickel cobaltate (NiCo 2O4) serving as the magnetically sensitive functional layer transferred onto the third substrate layer and the film before stripping are compared, so that no obvious difference can be seen between the two, and the fact that the transfer method of the magnetically sensitive film can basically maintain the original magnetically sensitive property of the device is proved.
In order to describe the technical scheme of the magnetic sensitive film transfer method of the present application in detail, a specific application example will be adopted in the following, and the whole processing procedure will be described with reference to fig. 3 to 9, which specifically includes the following steps:
1. Referring to fig. 3, an oxide epitaxial magnetically sensitive thin film layer 102 is grown on a first substrate layer 101 by magnetron sputtering or pulsed laser deposition. The oxide epitaxial magnetically sensitive thin film layer 102 includes a sacrificial layer 103, a first protective layer 104, a magnetically sensitive functional layer 105, and a second protective layer 106 in this order from bottom to top. Wherein:
a) The first substrate layer 101, the sacrificial layer 103, the first protective layer 104, the magnetically sensitive functional layer 105 and the second protective layer 106 all meet good lattice matching and epitaxial relationship.
B) The thickness of the sacrificial layer is controlled between 200nm and 1 mu m.
C) The magneto-sensitive functional layer 105 is a ferrimagnetic oxide single-layer film, a tunneling magneto-resistive multilayer film structure, or a giant magneto-resistive multilayer film structure having a strong anomalous hall effect. The tunneling magneto-resistance type multilayer thin film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
2. Referring to fig. 4, the second substrate layer 107 is bonded to the second protective layer 106 by adsorption, adhesion, bonding, or the like. The second substrate layer is selected from organic flexible substrate layers including polyimide or polydimethylsiloxane.
3. Referring to fig. 5, the sacrificial layer 103 is broken by excimer laser irradiation which can be set to a band gap of 4.02eV or 5.0eV so that the first structure formed by the second substrate layer 107, the first protective layer 104, the magnetically susceptible functional layer 105, and the second protective layer 106 is separated from the first substrate layer 101. The forbidden band width of the sacrificial layer 103 is smaller than the strippable forbidden band width provided by the excimer laser, and the forbidden band widths of the first substrate layer 101 and the second substrate layer 107 are respectively larger than the strippable forbidden band width. The uniformity of the excimer laser is higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the energy density of the laser is 100-300 mJ/cm 2. The materials of the layers of the first structure are selected from three combinations, and the three combinations specifically comprise:
a) One of the combination is that the first substrate layer and the second substrate layer are both made of magnesium oxide (MgO), the sacrificial layer is made of cobalt ferrite (CoFe 2O4), the first protective layer is made of magnesium oxide (MgO), the magnetically sensitive functional layer is made of ferroferric oxide (Fe 3O4), and the second protective layer is made of magnesium oxide (MgO), wherein all the materials are in 001 crystal plane orientation.
B) The second combination is that the first substrate layer and the second substrate layer are both made of magnesium aluminate (MgAl 2O4), the sacrificial layer is made of nickel cobaltate (NiCo 2O4) with Ruddlesden-Popper structure, the first protective layer is made of magnesium aluminate (MgAl 2O4), the magnetically sensitive functional layer is made of nickel cobaltate (NiCo 2O4) with spinel structure, the second protective layer is made of magnesium aluminate (MgAl 2O4), and all materials are oriented with 001 crystal faces.
C) The third combination is that the first substrate layer and the second substrate layer are both made of magnesium aluminate (MgAl 2O4), the sacrificial layer is made of nickel cobaltate (NiCo 2O4) with Ruddlesden-Popper structure, the first protective layer is made of magnesium aluminate (MgAl 2O4), the magnetically sensitive functional layer is made of nickel cobaltate (NiCo 2O4) or magnesium aluminate (MgAl 2O4) with tunnel junction sandwich structure, the second protective layer is made of magnesium aluminate (MgAl 2O4), and all materials are oriented in a 001 crystal face.
4. Referring to fig. 6 and 7, the first protective layer 104 in the first structure is combined with the third substrate layer 108 to obtain a second structure; laminating the second structure based on the second substrate layer 107 and the third substrate layer 108; the second substrate layer 107 in the second structure is removed to obtain the final magnetically susceptible multilayer film structure. Wherein the third substrate layer 108 is a flexible or rigid substrate layer with a flat atomic level surface, the steps specifically include:
a) First, a first structure composed of the second substrate layer 107, the second protective layer 106, the magnetically sensitive functional layer 105, and the first protective layer 104 is bonded to the third substrate layer 108.
B) And continuously pressing the first structure and the third substrate layer 108 for 10 minutes under the pressure of 1MPa by adopting a nano transfer printing method, and removing the pressure to obtain a second structure of the third substrate layer 108, the first protective layer 104, the magnetically sensitive functional layer 105, the second protective layer 106 and the second substrate layer 107 from bottom to top.
C) And finally tearing off the second substrate layer 107, thereby obtaining the magnetic sensitive multilayer film structure comprising the first protective layer 104, the magnetic sensitive functional layer 105 and the second protective layer 106, which is transferred onto the third substrate layer 108.
5. Referring to fig. 8, if the flexible thin film device on the second substrate needs to be put into use for performing the magnetic sensitivity test, before the thin film device is transferred from the first substrate 101 to the second substrate 107, the electrode lead-out terminal 110 is made on the surface of the second substrate 107 by sputtering or brushing a conductive coating, so that 109 and 110 are combined together, and then the performance test of the magnetic sensor can be performed by leading out the electrode; if the flexible thin film device is required to be transferred to the third substrate and then subjected to a magnetic sensitivity test, the surface of the electrode 109 is required to be brushed with a conductive coating or surface sputtering to draw out the electrode after the thin film device is transferred from the second substrate 107 to the third substrate, and then subjected to the magnetic test.
6. Referring to fig. 9, when the magnetic test is performed, the applied magnetic field is perpendicular to the surface of the substrate layer, and the applied magnetic field is calculated by applying a current to the x direction in the figure and measuring the hall voltage in the y direction. In the linear interval of the magnetic sensitive film device, the Hall voltage of the sensor is proportional to the magnetic field.
It should be understood that, although the steps in the flowcharts related to the embodiments described above are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.
Based on the above-mentioned magnetic sensitive film transfer method, the application also prepares a magnetic sensitive device. The overall process will be described below in connection with specific application examples and with reference to fig. 10 to 11, which specifically include the following steps:
1. Referring to fig. 10, before the laser lift-off process, the magnetic sensing function layer multilayer film structure needs to be patterned to realize the magnetic sensing function. Specifically, a step structure is prepared by using nickel cobaltate (NiCo 2O4) which is a magnetically sensitive functional layer through photoetching, a bottom electrode layer 111 and a top electrode layer 113 are reserved during film growth, and then growth of a second protection layer 106 is performed above the device. In this embodiment, the flexible thin film device needs to be transferred to the third substrate layer and then subjected to a magnetic sensitivity test, and at this time, the magnetic resistance change under the applied magnetic field can be measured after the electrode layer 111 and the electrode layer 113 are led out.
2. Referring to fig. 11, the change of the hall voltage of the nickel cobaltate (NiCo 2O4) serving as the magnetically sensitive functional layer transferred onto the third substrate layer and the change of the hall voltage are compared, so that no obvious difference exists between the nickel cobaltate (NiCo 2O4) and the magnetically sensitive functional layer, and the fact that the transfer method of the magnetically sensitive film can basically maintain the original magnetically sensitive property of the device is proved.
The embodiment of the application also provides a magnetic sensitive film transfer device for realizing the magnetic sensitive film transfer method according to the application based on the magnetic sensitive film transfer method, as shown in fig. 12. The device comprises:
a film layer growth module 201, configured to grow an oxide epitaxial magnetically sensitive film layer on the first substrate layer, where the oxide epitaxial magnetically sensitive film layer sequentially includes a sacrificial layer, a first protection layer, a magnetically sensitive functional layer, and a second protection layer;
a substrate layer bonding module 202 for bonding the second substrate layer with the second protective layer;
The substrate layer separation module 203 is configured to destroy the sacrificial layer by excimer laser irradiation, so that a first structure formed by the second substrate layer, the first protection layer, the magnetically sensitive functional layer, and the second protection layer is separated from the first substrate layer.
According to the magnetic sensitive film transfer method, an oxide epitaxial magnetic sensitive film layer is grown on a first substrate layer and sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding the second substrate layer with the second protective layer; the sacrificial layer is broken by excimer laser irradiation so that the first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer. The whole magnetic sensitive film transfer process is based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the film layer growth module 201 is further configured to grow an oxide epitaxial magnetically sensitive film layer, where a forbidden band width of the sacrificial layer is smaller than a strippable forbidden band width provided by the excimer laser, and each forbidden band width of the first substrate layer and the second substrate layer is larger than the strippable forbidden band width, and the strippable forbidden band width is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film, a tunneling magneto-resistance type multilayer film structure or a giant magneto-resistance type multilayer film structure with strong abnormal Hall effect; the tunneling magneto-resistance type multilayer thin film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
In one embodiment, the thin film layer growth module 201 is further configured to grow an oxide epitaxial magnetically sensitive thin film layer on the first substrate layer by magnetron sputtering or pulsed laser deposition.
In one embodiment, the substrate layer separation module 203 is further configured to bond a second substrate layer to the second protective layer, wherein the second substrate layer is an organic flexible substrate layer, and the organic flexible substrate layer comprises polyimide or polydimethylsiloxane. In one embodiment, the substrate layer bonding module 202 is further configured to bond the first protective layer in the first structure with the third substrate layer to obtain the second structure; pressing the second structure based on the second substrate layer and the third substrate layer; and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
In one embodiment, the substrate layer bonding module 202 is further configured to bond a first structure composed of a second substrate layer, a second protective layer, a magnetically sensitive functional layer, and a first protective layer to a third substrate layer, where the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
In one embodiment, the thin film layer growth module 201 is further used to grow an oxide epitaxial magnetically sensitive thin film layer, wherein the sacrificial layer has a thickness of 200nm to 1 μm.
In one embodiment, the substrate layer separation module 203 is further configured to radiate an excimer laser, wherein the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the energy density of the laser is 100-300 mJ/cm 2.
In one embodiment, the substrate layer bonding module 202 is further configured to bond a second substrate layer to a second protective layer, wherein the first substrate layer and the second substrate layer are MgO or MgAl 2O4 and the sacrificial layer is CoFe 2O4.
The modules in the magnetically sensitive film transfer device may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure thereof may be as shown in fig. 13. The computer device includes a processor, a memory, an input/output interface, a communication interface, a display unit, and an input means. The processor, the memory and the input/output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input/output interface. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input/output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a magnetically sensitive film transfer method. The display unit of the computer device is used for forming a visual picture, and can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be a key, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the structure shown in FIG. 13 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In an embodiment, there is also provided a computer device comprising a memory and a processor, the memory having stored therein a computer program, the processor implementing the steps of the method embodiments described above when the computer program is executed.
In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored which, when executed by a processor, carries out the steps of the method embodiments described above.
In an embodiment, a computer program product is provided, comprising a computer program which, when executed by a processor, implements the steps of the method embodiments described above.
It should be noted that, the user information (including but not limited to user equipment information, user personal information, etc.) and the data (including but not limited to data for analysis, stored data, presented data, etc.) related to the present application are information and data authorized by the user or sufficiently authorized by each party, and the collection, use and processing of the related data need to comply with the related laws and regulations and standards of the related country and region.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magneto-resistive random access Memory (Magnetoresistive Random Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (PHASE CHANGE Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in various forms such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), etc. The databases referred to in the embodiments provided herein may include at least one of a relational database and a non-relational database. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processor referred to in the embodiments provided in the present application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, or the like, but is not limited thereto.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (10)
1. A method of magnetically sensitive film transfer, the method comprising:
growing an oxide epitaxial magnetically sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer; wherein the magnetic sensitive functional layer has conductive magnetic sensitive characteristics; the magnetic sensitive functional layer is of a tunneling magnetic resistance type multilayer film structure or a giant magnetic resistance type multilayer film structure; the first protective layer and the second protective layer are used for protecting the magnetic sensitive functional layer; wherein the material of the first protective layer and the second protective layer is the same as the material of the first substrate layer; the material of the sacrificial layer comprises nickel cobaltate or cobalt ferrite; the material of the first protective layer comprises magnesium aluminate or magnesium oxide; the materials of the first substrate layer, the sacrificial layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer are all 001 crystal plane orientation;
Bonding a second substrate layer to the second protective layer;
the sacrificial layer is destroyed by excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetically susceptible functional layer and the second protective layer is separated from the first substrate layer.
2. The method of claim 1, wherein a forbidden band width of the sacrificial layer is smaller than a strippable forbidden band width provided by the excimer laser, and each forbidden band width of the first substrate layer and the second substrate layer is larger than the strippable forbidden band width, and the strippable forbidden band width is 4.02eV or 5.0eV.
3. The method of claim 1, wherein the tunneling magneto-resistive multilayer thin film structure comprises a ferrimagnetic free layer, an insulating layer, or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
4. The method of claim 1, wherein growing an oxide epitaxial magnetically susceptible thin film layer on the first substrate layer comprises:
An oxide epitaxial magnetically sensitive thin film layer is grown on the first substrate layer by magnetron sputtering or pulsed laser deposition.
5. The method of claim 1, wherein the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
6. The method of any one of claims 1 to 4, wherein the first structure is the first protective layer, the magnetically susceptible functional layer, the second protective layer, and the second substrate layer in that order from bottom to top; the method further comprises the steps of:
Combining the first protective layer in the first structure with a third substrate layer to obtain a second structure;
Pressing the second structure based on the second substrate layer and the third substrate layer;
and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
7. The method of claim 6, wherein the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
8. The method according to any one of claims 1 to 4, wherein the thickness of the sacrificial layer is 200nm to 1 μm.
9. The method of any one of claims 1 to 4, wherein the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2.
10. A magnetically susceptible device, characterized in that it is obtainable by a method as provided in any one of claims 1 to 9.
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