CN115942860A - Magnetic sensitive thin film transfer method and magnetic sensitive device - Google Patents
Magnetic sensitive thin film transfer method and magnetic sensitive device Download PDFInfo
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Abstract
The present application relates to a method, an apparatus, a computer device, a storage medium, a computer program product and a magnetically sensitive device for transferring a magnetically sensitive thin film. The method comprises the following steps: growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding a second substrate layer to the second protective layer; and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer. In the whole magnetic sensitive film transfer process, based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
Description
Technical Field
The present application relates to the field of magnetic sensitive thin film transfer technologies, and in particular, to a magnetic sensitive thin film transfer method, apparatus, computer device, storage medium, and computer program product.
Background
Magnetic materials are a class of materials with important functions, and have wide applications in the fields of driving, energy conversion, information sensing, information processing, information storage and the like. The variety of magnetic materials is wide, and oxide magnetic sensitive films, especially ferrimagnetic semimetal oxide films such as Fe3O4 and NiFe2O4 are expected to be selected as materials of a new generation of ultra-fast magnetic sensitive sensors due to the fact that the spin polarizability of the oxide magnetic sensitive films is close to 100% theoretically and the sub-picosecond magnetic switching rate is close to 100%.
With the development of internet of things technology, wearable technology and implantable technology, flexible magnetic sensitive films are receiving more and more attention. In recent years, the preparation method of the flexible magnetic sensitive film makes a major breakthrough, but the preparation of the high-quality flexible oxide functional film still faces some challenges: firstly, the preparation of high-quality oxide often requires high temperature conditions, and most organic flexible substrates cannot bear the high temperature of more than 300 ℃; secondly, oxide films are brittle and are difficult to withstand large deformations. Therefore, it is necessary to use a rigid material such as glass, sapphire, or silicon wafer as a mounting substrate in the early stage of the manufacturing process and then to complete the transfer of the device to a flexible substrate by a peeling process in the later stage.
The traditional magnetic sensitive film transfer method, such as a chemical etching method, is easy to damage the structure of the film, so that the magnetic sensitivity of the transferred film is changed, and the defect that the transfer of the magnetic sensitive film is not reliable enough exists.
Disclosure of Invention
In view of the foregoing, there is a need to provide a reliable magnetic sensitive thin film transfer method, apparatus, computer device, computer readable storage medium and computer program product for solving the above technical problems.
In a first aspect, the present application provides a method of magnetically sensitive thin film transfer. The method comprises the following steps:
growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
bonding a second substrate layer to the second protective layer;
and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
In one embodiment, the forbidden bandwidth of the sacrificial layer is smaller than the forbidden bandwidth which can be stripped and is correspondingly provided by the excimer laser, the respective forbidden bandwidths of the first substrate layer and the second substrate layer are both larger than the forbidden bandwidth which can be stripped, and the forbidden bandwidth which can be stripped is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film with a strong abnormal Hall effect, a tunneling magnetic resistance type multilayer film structure or a giant magnetic resistance type multilayer film structure; the tunneling magnetic resistance type multilayer film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure includes a ferrimagnetic free layer, a non-magnetic conductive layer, or a ferrimagnetic pinned layer.
In one embodiment, growing an oxide epitaxial magnetically susceptible thin film layer on a first substrate layer includes:
and growing an oxide epitaxial magnetic sensitive film layer on the first substrate layer by magnetron sputtering or pulsed laser deposition.
In one embodiment, the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
In one embodiment, the first structure comprises a first protective layer, a magnetically sensitive functional layer, a second protective layer and a second substrate layer from bottom to top in sequence; the magnetic sensitive film transfer method further comprises the following steps:
combining the first protective layer in the first structure with the third substrate layer to obtain a second structure;
pressing the second structure based on the second substrate layer and the third substrate layer;
and removing the second substrate layer in the second structure to obtain the final magnetic sensitive multilayer film structure.
In one embodiment, the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
In one embodiment, the sacrificial layer has a thickness of 200nm to 1 μm.
In one embodiment, the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 。
In one embodiment, the first substrate layer and the second substrate layer are MgO or MgAl 2 O 4 The sacrificial layer is CoFe 2 O 4 。
In a second aspect, the present application also provides a magnetically sensitive device. The magnetic sensitive device is prepared by the magnetic sensitive film transfer method.
In a third aspect, the present application also provides a magnetically susceptible thin film transfer device. The device comprises:
the thin film layer growing module is used for growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, and the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
the substrate layer combining module is used for combining the second substrate layer with the second protective layer;
and the substrate layer separation module is used for damaging the sacrificial layer through excimer laser irradiation so as to separate a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer from the first substrate layer.
In a fourth aspect, the present application further provides a computer device. The computer device comprises a memory storing a computer program and a processor implementing the following steps when executing the computer program:
growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
bonding a second substrate layer to the second protective layer;
and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
In a fifth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium, on which a computer program is stored which, when executed by a processor, carries out the steps of:
growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
bonding a second substrate layer to the second protective layer;
and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
In a sixth aspect, the present application further provides a computer program product. The computer program product comprising a computer program which when executed by a processor performs the steps of:
growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
bonding a second substrate layer to the second protective layer;
and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
According to the magnetic sensitive film transfer method, the magnetic sensitive film transfer device, the computer equipment, the storage medium, the computer program product and the magnetic sensitive device, the oxide epitaxial magnetic sensitive film layer grows on the first substrate layer and sequentially comprises the sacrificial layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer; bonding a second substrate layer to the second protective layer; and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer. In the whole magnetic sensitive film transfer process, based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
Drawings
FIG. 1 is a diagram of an exemplary environment in which a method for transferring a magnetically sensitive thin film can be used;
FIG. 2 is a schematic flow chart of a method for transferring a magnetically sensitive thin film in one embodiment;
FIG. 3 is a schematic diagram of a structure for growing a magnetically sensitive thin film on a first substrate layer in one embodiment;
FIG. 4 is a schematic diagram of the structure of the second protective layer bonded to the second substrate layer in one embodiment;
FIG. 5 is a schematic structural view of separating a magnetically susceptible thin film layer and a first substrate layer in one embodiment;
FIG. 6 is a schematic diagram of a structure in which a magnetically susceptible thin film is bonded to a third substrate layer in one embodiment;
FIG. 7 is a schematic diagram of a structure for peeling off a second substrate layer to realize film transfer in one embodiment;
FIG. 8 is a diagram of an anomalous Hall magnetic sensitive device structure transferred to a second substrate layer in one embodiment;
FIG. 9 is a diagram of an embodiment of an anomalous Hall magnetic sensitive device transferred to a third substrate layer;
FIG. 10 is a block diagram of a tunneling magneto-resistive magnetic sensitive device transferred to a third substrate layer in another embodiment;
FIG. 11 is a comparison graph of abnormal Hall effect tests in one embodiment;
FIG. 12 is a block diagram of the structure of a magnetically sensitive thin film transfer apparatus according to one embodiment;
FIG. 13 is a diagram illustrating an internal structure of a computer device according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
The method for transferring the magnetic sensitive film provided by the embodiment of the application can be applied to the application environment shown in fig. 1. In which the terminal 100 communicates with the server 200 through a network. The data storage system may store data that the server 200 needs to process. The data storage system may be integrated on the server 200, or may be placed on the cloud or other network server. The user operates at the terminal 100 side, and the terminal 100 responds to the user operation, thereby realizing reliable magnetic sensitive thin film transfer.
Specifically, the terminal 100 responds to a user operation, and grows an oxide epitaxial magnetically sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetically sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetically sensitive functional layer and a second protective layer; bonding a second substrate layer to the second protective layer; and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer. Among them, the terminal 100 may be, but is not limited to, various personal computers, notebook computers, and tablet computers. The server 200 may be implemented as a stand-alone server or as a server cluster comprising a plurality of servers.
In one embodiment, as shown in fig. 2, a method for transferring a magnetically sensitive thin film is provided, which is illustrated as being applied to the terminal 100 in fig. 1, and comprises the following steps:
s100: and growing an oxide epitaxial magnetic sensitive film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer.
Wherein the first substrate layer is made of single crystal substrate material with forbidden band width larger than that of the first substrate layer, and can be magnesium aluminate (MgAl) with 001 crystal face orientation 2 O 4 ) Or magnesium oxide (MgO) having a 001 plane orientation. The magnetically sensitive functional layer may be an oxide semi-metal film with perpendicular magnetic anisotropy and abnormal Hall effect, and specifically may be nickel cobaltate (NiCo) 2 O 4 ) Ferroferric oxide (Fe) 3 O 4 ) Or strontium tantalum lanthanum aluminate ((La, sr) (Mn, ru) O 3 ) And the like.
Referring to fig. 3, a magnetic sensitive epitaxial thin film layer 102 is first deposited on a first substrate layer 101. Specifically, an oxide epitaxial magnetic sensitive thin film layer 102 is grown on the first substrate layer 101, and the oxide epitaxial magnetic sensitive thin film layer 102 sequentially includes, from bottom to top, a sacrificial layer 103, a first protection layer 104, a magnetic sensitive functional layer 105, and a second protection layer 106.
S200: the second substrate layer is bonded to the second protective layer.
The second substrate is made of an organic flexible material with an adhesive coating or a certain adhesive force, and specifically can be polyimide or polydimethylsiloxane.
Referring to fig. 4, after the magnetically sensitive epitaxial thin film layer 102 is deposited on the first substrate layer 101, the second substrate layer 102 is combined with the second protection layer 106 by using methods such as adsorption, adhesion or bonding, so as to prevent the second protection layer 106 from being damaged in the subsequent pressing process.
S300: and damaging the sacrificial layer through excimer laser irradiation so as to separate a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer from the first substrate layer.
Wherein an excimer laser may be used to release the laser radiation to destroy the sacrificial layer.
Referring to fig. 5, the sacrificial layer 103 is damaged by excimer laser irradiation, so that the first structure formed by the second substrate layer 107, the second protective layer 106, the magnetically sensitive functional layer 105, and the first protective layer 104 is separated from the first substrate layer 101.
According to the magnetic sensitive film transfer method, an oxide epitaxial magnetic sensitive film layer grows on a first substrate layer, and the oxide epitaxial magnetic sensitive film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding a second substrate layer to the second protective layer; and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer. In the whole magnetic sensitive film transfer process, based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the forbidden bandwidth of the sacrificial layer is smaller than the forbidden bandwidth which can be stripped and is correspondingly provided by the excimer laser, the forbidden bandwidths of the first substrate layer and the second substrate layer are both larger than the forbidden bandwidth which can be stripped, and the forbidden bandwidth which can be stripped is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film with a strong abnormal Hall effect, a tunneling magneto-resistance type multilayer film structure or a giant magneto-resistance type multilayer film structure; the tunneling magnetic resistance type multilayer film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure includes a ferrimagnetic free layer, a non-magnetic conductive layer, or a ferrimagnetic pinned layer.
The bound electrons must obtain enough energy to transit from the valence band to the conduction band for becoming free electrons or holes, the minimum value of the energy is the forbidden bandwidth, and the forbidden bandwidth which can be stripped and correspondingly provided by the excimer laser in the embodiment can be set to be 4.02eV or 5.0eV. The forbidden bandwidth of the sacrificial layer is smaller than the forbidden bandwidth which can be stripped and is correspondingly provided by the excimer laser, so that the excimer laser can be ensured to damage the sacrificial layer, and a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer; the respective forbidden band widths of the first substrate layer and the second substrate layer are larger than the forbidden band width which can be stripped, so that the first substrate layer and the second substrate layer can not be damaged when the sacrificial layer is damaged by the excimer laser.
When a current passes through a conductor perpendicular to an external magnetic field, a potential difference occurs between two end faces of the conductor perpendicular to the magnetic field and the direction of the current, which is the hall effect. The abnormal Hall effect, namely the Hall effect which can be observed without adding an external magnetic field, can further get rid of the constraint of a strong magnetic field by utilizing the abnormal Hall effect, and realizes the miniaturization of a high-performance electronic device.
In this embodiment, the forbidden bandwidth of the sacrificial layer is smaller than the forbidden bandwidth that can be stripped and provided by the excimer laser, and the forbidden bandwidths of the first substrate layer and the second substrate layer are both larger than the forbidden bandwidth that can be stripped and provided by the excimer laser, so that the structures of the first substrate layer and the second substrate layer are not damaged when the sacrificial layer is damaged by using the laser stripping technology, and reliable magnetic sensitive film transfer is realized.
In one embodiment, growing an oxide epitaxial magnetically susceptible thin film layer on a first substrate layer includes: and growing an oxide epitaxial magnetic sensitive film layer on the first substrate layer by magnetron sputtering or pulsed laser deposition.
Referring to fig. 3, the oxide epitaxial magnetic sensitive thin film layer grown on the first substrate includes a sacrificial layer 103, a first protective layer 104, a magnetic sensitive functional layer 105, and a second protective layer 106, and the first substrate layer 101, the sacrificial layer 103, the first protective layer 104, the magnetic sensitive functional layer 105, and the second protective layer 106 all satisfy a good lattice matching and epitaxial relationship between layers. The growth method of the oxide film 102 is magnetron sputtering or pulsed laser deposition. The magnetron sputtering method has the advantages of high speed, low temperature and low damage, and the pulsed laser deposition has the advantage of good component preservation.
In the embodiment, through good lattice matching and epitaxial relationship among the first substrate layer, the sacrificial layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer, the magnetic oxide film with high crystallization quality is grown on the first substrate layer; by magnetron sputtering and pulse laser precipitation methods, the quality of the high-crystallization multilayer film material is ensured again, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
The complex oxide has rich performance, the magnetic, electric, force, heat and coupling effect among various properties provide a new opportunity for realizing a flexible multifunctional electromagnetic device, in the process of preparing the flexible magnetic sensitive film, a terminal substrate material is difficult to bear high-temperature process links such as deposition, evaporation and the like, and is extremely easy to damage and deform, which is a common problem in the flexible magnetic sensitive film manufacturing technology all the time, rigid materials such as glass, sapphire, silicon chips and the like are required to be used as carrying substrates in the early stage of manufacturing, and then the device is transferred to the flexible substrate through the later-stage stripping process. In the embodiment, the second substrate layer is used as a transition layer for intermediate transfer, the oxide epitaxial magnetic sensitive thin film layer grown on the first substrate layer is transferred to the second substrate layer, and then the second substrate layer is torn off after the first protective layer and the third substrate layer are well laminated, so that the second protective layer is prevented from being damaged.
In the embodiment, the organic flexible substrate layer comprising polyimide or polydimethylsiloxane is used as the second substrate layer, the oxide epitaxial magnetic sensitive film layer growing on the first substrate layer is transferred to the second substrate layer, and then the second substrate layer is torn off after the first protective layer and the third substrate layer are well laminated, so that the second protective layer is prevented from being damaged, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the first structure comprises a first protective layer, a magnetically sensitive functional layer, a second protective layer and a second substrate layer from bottom to top in sequence; the method further comprises the following steps: combining the first protective layer in the first structure with the third substrate layer to obtain a second structure; pressing the second structure based on the second substrate layer and the third substrate layer; and removing the second substrate layer in the second structure to obtain the final magnetic sensitive multilayer film structure.
To achieve silicon integration of oxide magnetically sensitive thin films or placement on any substrate, the thin films need to be transferred from the second substrate to a third substrate. Specifically, a nano transfer printing method can be adopted, one side of the first protective layer is pressed on the upper surface of the third substrate, pressing is carried out for 10 minutes under the pressure of 1MPa, the pressure is removed, then the second substrate is torn off, and the magnetically sensitive multilayer film structure transferred to the third substrate can be obtained. The structure is as follows from bottom to top: the magnetic sensor comprises a third substrate, a first protective layer, a magnetic sensitive functional layer and a second protective layer.
Specifically, the first structure including the second substrate layer 107, the second protective layer 106, the magnetically sensitive functional layer 105, and the first protective layer 104 is obtained from top to bottom based on a laser lift-off technique. As shown in fig. 6, the first structure described above is first bonded to third substrate layer 108. And then, adopting a nano transfer printing method, further pressing the first structure and the third substrate layer 108 for 10 minutes under the pressure of 1MPa, and removing the pressure to obtain a second structure which comprises the third substrate layer 108, the first protective layer 104, the magnetic sensitive functional layer 105, the second protective layer 106 and the second substrate layer 107 from bottom to top. As shown in fig. 7, since the second substrate layer is combined with the second protective layer 106 in advance based on methods such as adsorption, adhesion, or bonding, the second substrate layer 107 is finally torn off, and the multilayer magnetosensitive film structure including the first protective layer 104, the magnetosensitive functional layer 105, and the second protective layer 106, which is transferred to the third substrate layer 108, can be obtained.
In this embodiment, based on a nano transfer printing method, a first structure composed of a second substrate layer, a second protective layer, a magnetically sensitive functional layer, and a first protective layer is laminated with a third substrate layer to obtain a second structure including the third substrate layer, the first protective layer, the magnetically sensitive functional layer, the second protective layer, and the second substrate layer from bottom to top, and then the second substrate layer is torn off from the second protective layer to obtain a magnetically sensitive multilayer film structure including the first protective layer, the magnetically sensitive functional layer, and the second protective layer, which is transferred to the third substrate layer, thereby realizing reliable transfer of a magnetically sensitive film.
In one embodiment, the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
Because the nano transfer method is adopted for transferring the oxide film from the second substrate layer to the third substrate layer, the third substrate layer adopts a flexible or rigid substrate layer with a smooth surface at an atomic level, so that the lower surface of the first protective layer can be more tightly pressed with the upper surface of the third substrate layer.
Specifically, a first structure composed of a second substrate layer, a second protective layer, a magnetic sensitive functional layer and a first protective layer and a third substrate layer with an atomic-level flat surface are continuously pressed for 10 minutes under the pressure of 1MPa by adopting a nano transfer printing method, and the pressure is removed, so that a second structure composed of the third substrate layer, the first protective layer, the magnetic sensitive functional layer, the second protective layer and the second substrate layer from bottom to top is obtained.
In the embodiment, the flexible or rigid substrate layer with the atomic-level smooth surface is used as the third substrate layer, so that the first structure formed by the second substrate layer, the second protective layer, the magnetic sensitive functional layer and the first protective layer is more tightly pressed with the third substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the sacrificial layer has a thickness of 200nm to 1 μm.
The thickness of the sacrificial layer is usually 200nm to 1 μm, because the sacrificial layer is required to ensure that the laser does not damage the magnetically sensitive functional layer and also to meet the epitaxial characteristics of the superlattice multilayer heterostructure. Under the condition that the thickness of the sacrificial layer is 200 nm-1 mu m, the excimer laser can be ensured to damage the sacrificial layer, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and the excimer laser can be ensured not to damage the magnetic sensitive functional layer.
In the embodiment, by controlling the growth thickness of the sacrificial layer to be 200nm to 1 μm, it is ensured that the sacrificial layer can be damaged by laser, so that the first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and meanwhile, the magnetic sensitive functional layer is not damaged by laser, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 。
In the application, the sacrificial layer is destroyed by excimer laser, so that the first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer and the second protective layer is separated from the first substrate layer. The band gap which can be stripped and correspondingly provided by the excimer laser can be set to be 4.02eV or 5.0eV, so that the uniformity of the excimer laser needs to be higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 . In particular. The uniformity of the excimer laser can be measured by the process window.
In this embodiment, in order to ensure that the sacrificial layer can be damaged by the excimer laser, and thus to separate the first structure formed by the second substrate layer, the first protective layer, the magnetically sensitive functional layer, and the second protective layer from the first substrate layer, the excimer laser needs to be setThe uniformity is higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 Reliable magnetic sensitive thin film transfer is achieved.
In one embodiment, the first substrate layer and the second substrate layer are MgO or MgAl 2 O 4 The sacrificial layer is CoFe 2 O 4 。
Referring to fig. 5, in the process of transferring the magnetic sensitive film by using the laser lift-off technology, the first substrate layer 101 and the second substrate layer 107 may be selected from oxides having magnetic, electrical, mechanical, thermal and coupling effects between various properties, such as magnesium oxide (MgO) or magnesium aluminate (MgAl) 2 O 4 ) (ii) a The sacrificial layer can be cobalt ferrite (CoFe) capable of being damaged by excimer laser irradiation 2 O 4 ). The protective layer may be selected to be the same insulating material as the substrate to reduce strain damage during laser lift-off.
Specifically, there are three combinations of material choices between layers. One combination is that the first substrate layer and the second substrate layer are both made of magnesium oxide (MgO) and the sacrificial layer is made of cobalt ferrite (CoFe) 2 O 4 ) The first protective layer is made of magnesium oxide (MgO), and the magnetic sensitive functional layer is made of ferroferric oxide (Fe) 3 O 4 ) And a second protective layer of magnesium oxide (MgO), wherein all materials are oriented with 001 crystal planes.
The second combination is that the first substrate layer and the second substrate layer both adopt magnesium aluminate (MgAl) 2 O 4 ) Nickel cobaltate (NiCo) of Ruddlesden-Popper structure of sacrificial layer 2 O 4 ) The first protective layer is magnesium aluminate (MgAl) 2 O 4 ) The magnetic sensitive functional layer is made of spinel structure nickel cobaltate (NiCo) 2 O 4 ) The second protective layer is magnesium aluminate (MgAl) 2 O 4 ) All materials are oriented with 001 crystal planes. Wherein the sacrificial layer Ruddlesden-Popper structure NiCo 2 O 4 The growth temperature of the magnetic sensitive functional layer is more than 450 ℃, and the spinel structure NiCo of the magnetic sensitive functional layer 2 O 4 The growth temperature of the sacrificial layer is 350 ℃, so that the insulativity of the sacrificial layer and the conductive magnetic sensitivity of the functional layer are ensured. Spinel structure NiCo with magnetic sensitive functional layer 2 O 4 Is not more than 20nm to ensure its linear sensitive response to magnetic fields.
The third combination is that the first substrate layer and the second substrate layer both adopt magnesium aluminate (MgAl) 2 O 4 ) Nickel cobaltate (NiCo) of Ruddlesden-Popper structure of sacrificial layer 2 O 4 ) The first protective layer is magnesium aluminate (MgAl) 2 O 4 ) The magnetic sensitive functional layer is made of nickel cobaltate (NiCo) with a tunnel junction sandwich structure 2 O 4 ) Or magnesium aluminate (MgAl) 2 O 4 ) The second protective layer is magnesium aluminate (MgAl) 2 O 4 ) All materials are oriented with 001 crystal planes. Wherein the tunnel junction sandwich structure is a ferrimagnetic free layer NiCo with the thickness not more than 20nm from the bottom 2 O 4 MgAl as insulating tunneling layer with thickness of 5-20 nm 2 O 4 And a ferrimagnetic pinning layer having a thickness greater than 25 nm.
In another embodiment, as shown in fig. 8, if the flexible thin film device on the second substrate layer 107 needs to be put into use for performing a magnetic sensitivity test, before the thin film device is transferred from the first substrate layer 101 to the second substrate layer 107, an electrode leading-out terminal 110 needs to be formed on the surface of the second substrate layer 107 by sputtering or brushing a conductive coating, so that the reserved electrode layer 109 and the electrode leading-out terminal 110 are connected together, and then the electrode is led out to perform a performance test on the magnetic sensor.
In another embodiment, as shown in fig. 8, if the flexible thin film device is required to be transferred to the third substrate layer and then subjected to the magnetic sensitivity test, after the thin film device is transferred from the second substrate layer 107 to the third substrate layer, the surface of the reserved electrode layer 109 is brushed with a conductive coating or sputtered to extract electrodes, and the magnetic test is performed.
In another embodiment, shown in FIG. 9, the applied magnetic field is perpendicular to the surface of the substrate and is calculated by measuring the Hall voltage in the y-direction by passing a current in the x-direction of the figure. In the linear interval of the magnetic sensitive thin film device, the Hall voltage of the sensor is in direct proportion to the magnitude of the magnetic field.
In another embodiment, as shown in FIG. 10, during excitationBefore the light stripping process, the multilayer film structure of the magnetic sensitive functional layer needs to be patterned to realize the magnetic sensing function. In particular, it is necessary to incorporate a magnetically susceptible functional layer of nickel cobaltate (NiCo) 2 O 4 ) A step structure is prepared by photolithography, and the bottom electrode layer 111 and the top electrode layer 113 are reserved when a thin film is grown, after which the growth of the second protective layer 106 is performed over the device. In this embodiment, the flexible thin film device needs to be transferred to the third substrate layer and then subjected to a magnetic sensitivity test, and then the electrode layer 111 and the electrode layer 113 are led out to measure the magnetoresistance change under the external magnetic field.
In another embodiment, as shown in FIG. 11, the pre-strip film is compared to a magnetically susceptible functional layer of nickel cobaltate (NiCo) transferred onto a third substrate layer 2 O 4 ) The Hall voltage and the change graph of the external magnetic field are not obviously different, and the fact that the original magnetic sensitivity property of the device can be basically maintained by the magnetic sensitive film transfer method is proved.
To explain the technical solution of the magnetic sensitive thin film transfer method in detail, the following will use specific application examples and refer to fig. 3 to 9 to describe the whole process, which specifically includes the following steps:
1. referring to fig. 3, an oxide epitaxial magnetic sensitive thin film layer 102 is grown on a first substrate layer 101 by magnetron sputtering or pulsed laser deposition. The oxide epitaxial magnetic sensitive thin film layer 102 sequentially comprises a sacrificial layer 103, a first protective layer 104, a magnetic sensitive functional layer 105 and a second protective layer 106 from bottom to top. Wherein:
a) The first substrate layer 101, the sacrificial layer 103, the first protection layer 104, the magnetic sensitive function layer 105 and the second protection layer 106 all satisfy good lattice matching and epitaxial relationship among the layers.
b) The thickness of the sacrificial layer is controlled between 200nm and 1 μm.
c) The magnetic sensitive functional layer 105 is a ferrimagnetic oxide single-layer thin film with a strong abnormal hall effect, a tunneling magnetoresistance type multilayer thin film structure or a giant magnetoresistance type multilayer thin film structure. The tunneling magneto-resistance type multilayer film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure includes a ferrimagnetic free layer, a non-magnetic conductive layer, or a ferrimagnetic pinned layer.
2. Referring to fig. 4, the second substrate layer 107 is bonded to the second protective layer 106 by adsorption, adhesion, or bonding. The second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
3. Referring to fig. 5, the sacrificial layer 103 is damaged by excimer laser irradiation which can be set to 4.02eV or 5.0eV in the strip gap width, so that the first structure formed by the second substrate layer 107, the first protective layer 104, the magnetically sensitive functional layer 105, and the second protective layer 106 is separated from the first substrate layer 101. The energy gap of the sacrificial layer 103 is smaller than the energy gap which can be stripped and is correspondingly provided by the excimer laser, and the energy gaps of the first substrate layer 101 and the second substrate layer 107 are both larger than the energy gap which can be stripped. The uniformity of the excimer laser is higher than 92%, the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 . The selection of materials among the layers of the first structure has three combinations, and specifically comprises the following steps:
a) One combination of the first substrate layer and the second substrate layer is magnesium oxide (MgO) and the sacrificial layer is cobalt ferrite (CoFe) 2 O 4 ) The first protective layer is made of magnesium oxide (MgO), and the magnetic sensitive functional layer is made of ferroferric oxide (Fe) 3 O 4 ) And a second protective layer of magnesium oxide (MgO), wherein all materials are oriented with 001 crystal planes.
b) The second combination is that magnesium aluminate (MgAl) is selected for the first substrate layer and the second substrate layer 2 O 4 ) Nickel cobaltate (NiCo) of Ruddlesden-Popper structure of sacrificial layer 2 O 4 ) The first protective layer is magnesium aluminate (MgAl) 2 O 4 ) The magnetic sensitive functional layer is made of spinel structure nickel cobaltate (NiCo) 2 O 4 ) The second protective layer is magnesium aluminate (MgAl) 2 O 4 ) All materials are oriented with the 001 plane.
c) And the third combination is that the first substrate layer and the second substrate layer both adopt magnesium aluminate (MgAl) 2 O 4 ) Nickel cobaltate (NiCo) of Ruddlesden-Popper structure of sacrificial layer 2 O 4 ) The first protective layer is magnesium aluminate (MgAl) 2 O 4 ) The magnetic sensitive functional layer adopts a tunnel junction sandwich structure nickel cobaltate (NiCo) 2 O 4 ) Or magnesium aluminate (MgAl) 2 O 4 ) The second protective layer is magnesium aluminate (MgAl) 2 O 4 ) All materials are oriented with 001 crystal planes.
4. Referring to fig. 6 and 7, a second structure is obtained by combining the first protective layer 104 in the first structure with the third substrate layer 108; pressing the second structure based on the second substrate layer 107 and the third substrate layer 108; the second substrate layer 107 in the second structure is removed to obtain the final magnetically sensitive multilayer film structure. Wherein, third substrate layer 108 adopts an atomically flat flexible or rigid substrate layer, and the steps specifically include:
a) First, a first structure composed of the second substrate layer 107, the second protective layer 106, the magnetically sensitive functional layer 105, and the first protective layer 104 is bonded to the third substrate layer 108.
b) And further pressing the first structure and the third substrate layer 108 under the pressure of 1MPa for 10 minutes by adopting a nano transfer printing method, and removing the pressure to obtain a second structure comprising the third substrate layer 108, the first protective layer 104, the magnetic sensitive functional layer 105, the second protective layer 106 and the second substrate layer 107 from bottom to top.
c) And finally, tearing off the second substrate layer 107 to obtain the magnetically sensitive multilayer film structure which is transferred to the third substrate layer 108 and comprises the first protective layer 104, the magnetically sensitive functional layer 105 and the second protective layer 106.
5. Referring to fig. 8, if the flexible thin film device on the second substrate needs to be put into use for performing a magnetic sensitivity test, before the thin film device is transferred from the first substrate 101 to the second substrate 107, the electrode leading-out terminal 110 is formed on the surface of the second substrate 107 by methods such as sputtering or brushing a conductive coating, so that the electrodes 109 and 110 are connected, and then the electrodes are led out to perform a performance test on the magnetic sensor; if the flexible thin film device needs to be transferred to the third substrate and then the magnetic sensitivity test is performed, after the thin film device is transferred from the second substrate 107 to the third substrate, the surface of the electrode 109 needs to be brushed with a conductive coating or sputtered to extract the electrode, and then the magnetic test is performed.
6. Referring to fig. 9, when performing the magnetic test, the applied magnetic field is perpendicular to the surface of the substrate layer, and the applied magnetic field is calculated by applying a current to the x direction in the figure and measuring the hall voltage in the y direction. In the linear interval of the magnetic sensitive thin film device, the Hall voltage of the sensor is in direct proportion to the magnitude of the magnetic field.
It should be understood that, although the steps in the flowcharts related to the embodiments as described above are sequentially displayed as indicated by arrows, the steps are not necessarily performed sequentially as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a part of the steps in the flowcharts related to the embodiments described above may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the execution order of the steps or stages is not necessarily sequential, but may be rotated or alternated with other steps or at least a part of the steps or stages in other steps.
Based on the above related magnetic sensitive film transfer method, the application also prepares a magnetic sensitive device. The whole processing procedure will be described with reference to the specific application example and fig. 10 to 11, which specifically includes the following steps:
1. referring to fig. 10, before the laser lift-off process, the multilayer film structure of the magnetic sensitive functional layer needs to be patterned to realize the magnetic sensing function. The magnetically sensitive functional layer nickel cobaltate (NiCo) is particularly required to be added 2 O 4 ) A step structure is prepared by photolithography, and the bottom electrode layer 111 and the top electrode layer 113 are reserved when a thin film is grown, after which the growth of the second protective layer 106 is performed over the device. In this embodiment, the flexible thin film device needs to be transferred to the third substrate layer and then subjected to a magnetic sensitivity test, and then the electrode layer 111 and the electrode layer 113 are led out to measure the magnetoresistance change under the external magnetic field.
2. Please refer toFIG. 11 is a graph comparing a film before peeling and a magnetically susceptible functional layer of nickel cobaltate (NiCo) transferred to a third substrate layer 2 O 4 ) The Hall voltage changes along with the change of the external magnetic field, and the difference between the Hall voltage and the external magnetic field is not obvious, so that the method for transferring the magnetic sensitive film can basically keep the original magnetic sensitive property of the device.
Based on the inventive concept of the magnetic sensitive thin film transfer method, as shown in fig. 12, the embodiment of the present application further provides a magnetic sensitive thin film transfer apparatus for implementing the above-mentioned magnetic sensitive thin film transfer method. The device comprises:
the thin film layer growing module 201 is used for growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
a substrate layer bonding module 202 for bonding a second substrate layer with a second protective layer;
and the substrate layer separation module 203 is used for damaging the sacrificial layer through excimer laser irradiation so as to separate a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer from the first substrate layer.
According to the magnetic sensitive film transfer method, an oxide epitaxial magnetic sensitive film layer grows on a first substrate layer, and sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer; bonding a second substrate layer to the second protective layer; and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer. In the whole magnetic sensitive film transfer process, based on the first substrate layer, an oxide epitaxial magnetic sensitive film layer containing a sacrificial layer grows, and the sacrificial layer is damaged through laser irradiation, so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer, and reliable magnetic sensitive film transfer is realized.
In one embodiment, the thin film layer growth module 201 is further configured to grow an oxide epitaxial magnetic sensitive thin film layer, where a forbidden bandwidth of the sacrificial layer is smaller than a forbidden bandwidth that can be stripped and correspondingly provided by the excimer laser, and the respective forbidden bandwidths of the first substrate layer and the second substrate layer are both larger than the forbidden bandwidth that can be stripped, and the forbidden bandwidth that can be stripped is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film with a strong abnormal Hall effect, a tunneling magneto-resistance type multilayer film structure or a giant magneto-resistance type multilayer film structure; the tunneling magnetic resistance type multilayer film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure includes a ferrimagnetic free layer, a non-magnetic conductive layer, or a ferrimagnetic pinned layer.
In one embodiment, the thin film layer growing module 201 is further configured to grow an oxide epitaxial magnetically sensitive thin film layer on the first substrate layer by magnetron sputtering or pulsed laser deposition.
In one embodiment, the substrate layer separation module 203 is further configured to combine a second substrate layer with a second protective layer, wherein the second substrate layer is an organic flexible substrate layer, and the organic flexible substrate layer comprises polyimide or polydimethylsiloxane. In one embodiment, the substrate layer bonding module 202 is further configured to bond the first protective layer in the first structure with a third substrate layer to obtain a second structure; pressing the second structure based on the second substrate layer and the third substrate layer; and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
In one embodiment, the substrate layer bonding module 202 is further configured to bond the first structure composed of the second substrate layer, the second protective layer, the magnetically sensitive functional layer, and the first protective layer with a third substrate layer, where the third substrate layer is a flexible or rigid substrate layer with a flat surface at an atomic level.
In one embodiment, the thin film layer growing module 201 is further used for growing an oxide epitaxial magnetic sensitive thin film layer, wherein the thickness of the sacrificial layer is 200nm to 1 μm.
In one embodiment, the substrate layer separation module 203 is further configured to irradiate an excimer laser, wherein the uniformity of the excimer laser is higher than 92%; excimer moleculesThe wavelength of the laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 。
In one embodiment, the substrate layer bonding module 202 is further configured to bond a second substrate layer and a second protective layer, wherein the first substrate layer and the second substrate layer are MgO or MgAl 2 O 4 The sacrificial layer is CoFe 2 O 4 。
The modules in the magnetic sensitive thin film transfer device can be wholly or partially realized by software, hardware and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 13. The computer apparatus includes a processor, a memory, an input/output interface, a communication interface, a display unit, and an input device. The processor, the memory and the input/output interface are connected by a system bus, and the communication interface, the display unit and the input device are connected by the input/output interface to the system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program to run on the non-volatile storage medium. The input/output interface of the computer device is used for exchanging information between the processor and an external device. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless communication can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a magnetically sensitive thin film transfer method. The display unit of the computer device is used for forming a visual picture and can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on the shell of the computer equipment, an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the configuration shown in fig. 13 is a block diagram of only a portion of the configuration associated with the present application, and is not intended to limit the computing device to which the present application may be applied, and that a particular computing device may include more or fewer components than shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is further provided, which includes a memory and a processor, the memory stores a computer program, and the processor implements the steps of the above method embodiments when executing the computer program.
In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored which, when being executed by a processor, carries out the steps of the above-mentioned method embodiments.
In an embodiment, a computer program product is provided, comprising a computer program which, when being executed by a processor, carries out the steps of the above-mentioned method embodiments.
It should be noted that, the user information (including but not limited to user equipment information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) referred to in the present application are information and data authorized by the user or sufficiently authorized by each party, and the collection, use and processing of the related data need to comply with the relevant laws and regulations and standards of the relevant country and region.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above may be implemented by hardware instructions of a computer program, which may be stored in a non-volatile computer-readable storage medium, and when executed, may include the processes of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high-density embedded nonvolatile Memory, resistive Random Access Memory (ReRAM), magnetic Random Access Memory (MRAM), ferroelectric Random Access Memory (FRAM), phase Change Memory (PCM), graphene Memory, and the like. Volatile Memory can include Random Access Memory (RAM), external cache Memory, and the like. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others. The databases referred to in various embodiments provided herein may include at least one of relational and non-relational databases. The non-relational database may include, but is not limited to, a block chain based distributed database, and the like. The processors referred to in the various embodiments provided herein may be, without limitation, general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, or the like.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, and these are all within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (10)
1. A method of magnetically susceptible thin film transfer, the method comprising:
growing an oxide epitaxial magnetic sensitive thin film layer on the first substrate layer, wherein the oxide epitaxial magnetic sensitive thin film layer sequentially comprises a sacrificial layer, a first protective layer, a magnetic sensitive functional layer and a second protective layer;
bonding a second substrate layer to the second protective layer;
and damaging the sacrificial layer through excimer laser irradiation so that a first structure formed by the second substrate layer, the first protective layer, the magnetic sensitive functional layer and the second protective layer is separated from the first substrate layer.
2. The method of claim 1, wherein the energy gap of the sacrificial layer is smaller than the energy gap that can be stripped and provided by the excimer laser correspondingly, the energy gaps of the first substrate layer and the second substrate layer are both larger than the energy gap that can be stripped, and the energy gap that can be stripped and provided is 4.02eV or 5.0eV; the magnetic sensitive functional layer is a ferrimagnetic oxide single-layer film with a strong abnormal Hall effect, a tunneling magnetic resistance type multilayer film structure or a giant magnetic resistance type multilayer film structure; the tunneling magnetoresistance type multilayer film structure comprises a ferrimagnetic free layer, an insulating layer or a ferrimagnetic pinning layer; the giant magnetoresistance type multilayer thin film structure comprises a ferrimagnetic free layer, a non-magnetic conductive layer or a ferrimagnetic pinning layer.
3. The method of claim 1, wherein growing an oxide epitaxial magnetically susceptible thin film layer on the first substrate layer comprises:
and growing an oxide epitaxial magnetic sensitive film layer on the first substrate layer by magnetron sputtering or pulsed laser deposition.
4. The method of claim 1, wherein the second substrate layer is an organic flexible substrate layer comprising polyimide or polydimethylsiloxane.
5. The method according to any one of claims 1 to 4, wherein the first structure is, from bottom to top, the first protective layer, the magnetically susceptible functional layer, the second protective layer and the second substrate layer; the method further comprises the following steps:
combining the first protective layer in the first structure with a third substrate layer to obtain a second structure;
pressing the second structure based on the second substrate layer and the third substrate layer;
and removing the second substrate layer in the second structure to obtain the final magnetically sensitive multilayer film structure.
6. The method of claim 5, wherein the third substrate layer is a flexible or rigid substrate layer with an atomically flat surface.
7. The method according to any one of claims 1 to 6, wherein the thickness of the sacrificial layer is 200nm to 1 μm.
8. The method according to any one of claims 1 to 6, wherein the excimer laser has a uniformity of greater than 92%; the wavelength of the excimer laser is 308nm or 248nm, and the laser energy density is 100-300 mJ/cm 2 。
9. The method of any of claims 1-6, wherein the first substrate layer and the second substrate layer are MgO or MgAl 2 O 4 The sacrificial layer is CoFe 2 O 4 。
10. A magnetically susceptible device, prepared by a method as provided in any one of claims 1 to 9.
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| CN106920813A (en) * | 2015-12-28 | 2017-07-04 | 昆山工研院新型平板显示技术中心有限公司 | The preparation method of flexible display |
| CN111540826A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Flexible functional film based on composite transition layer and preparation method thereof |
| CN111620299A (en) * | 2020-05-29 | 2020-09-04 | 华中科技大学 | Double-sided flexible electronic device compatible with high-temperature processing and integrated preparation method thereof |
| CN112670432A (en) * | 2020-12-24 | 2021-04-16 | 深圳市华星光电半导体显示技术有限公司 | Flexible display substrate, manufacturing method thereof and display device |
| CN113810018A (en) * | 2021-08-30 | 2021-12-17 | 浙江大学杭州国际科创中心 | Method for preparing single crystal film bulk acoustic resonator in laser lift-off mode |
| CN114050216A (en) * | 2021-10-28 | 2022-02-15 | 华中科技大学 | Flexible electronic device and laser processing method thereof |
| CN114497362A (en) * | 2022-04-01 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Magnetic tunnel junction based on full-oxide single crystal thin film material and preparation method thereof |
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