CN106328805A - Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction - Google Patents
Magnetic tunnel junction with quantum effect, and spin diode and spin transistor comprising magnetic tunnel junction Download PDFInfo
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- CN106328805A CN106328805A CN201510382329.3A CN201510382329A CN106328805A CN 106328805 A CN106328805 A CN 106328805A CN 201510382329 A CN201510382329 A CN 201510382329A CN 106328805 A CN106328805 A CN 106328805A
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Abstract
The invention relates to a magnetic tunnel junction with a quantum effect, and a spin diode and a spin transistor comprising the magnetic tunnel junction. The magnetic tunnel junction comprises a first reference layer, a first barrier layer, a free layer, and a second barrier layer, wherein the first reference layer is formed by a magnetic conductive material and has a fixed magnetizing direction; the first barrier layer is arranged on the first reference layer and formed by an insulating material; the free layer is arranged on the first barrier layer, and formed by a magnetic conductive material, and the magnetizing direction of the free layer can respond to an outer magnetic field to be freely changed; and the second barrier layer is arranged on the free layer and formed by an insulating material, wherein the insulating materials of the first barrier layer and the second barrier layer both comprise a spinel-like crystal structure.
Description
Technical field
Present invention relates in general to MTJ, more specifically it relates to one has notable quantum effect
MTJ and include the spin electric device of described MTJ, such as spin transistor,
Spin diode, magneto-dependent sensor and agitator etc..
Background technology
In Fe/Ge/Co multilayer film, tunneling magnetic resistance (TMR) effect and 1988 is found from 1975
Since year finds giant magnetoresistance effect (GMR) in magnetoresistance effect, the physics in spintronics and material
Research and the application of material science have made great progress, especially spin correlation electron in MTJ
Tunneling transmission character and Tunneling Magnetoresistance have become one of important research field in Condensed Matter Physics.
Nineteen ninety-five Miyazaki et al. and Moderola et al. are respectively in feeromagnetic metal/Al-O insulative barriers/ferromagnetic
Metal is found that high room temperature Tunneling Magnetoresistance, has again started the research tide of magneto-resistance effect.
2000, Butler et al. was found, for monocrystalline MgO (001) potential barrier by first principle research
MTJ, during tunnelling, the how sub-electronics of s band (Δ 1 symmetry, spin up) plays a leading role, can
To obtain huge tunneling magnetic resistance.This theory in 2004 by Yuasa et al. of Japan and the U.S.
Parkin et al. confirm experimentally.At present, people are at magnetic tunnel based on MgO (001) potential barrier
Road knot has obtained the room temperature TMR value more than 600%.At device application aspect, Johnson in 1993
Propose a kind of nonmagnetic metal base stage being less than spin diffusion length by ferromagnetic metal emitter stage, thickness
" ferromagnetic metal/nonmagnetic metal/ferromagnetic metal " sandwich with ferromagnetic metal colelctor electrode composition
All-metal spinning crystals tubular construction (sees the article Science 260 (1993) 320 of M.Johnson).This
The speed of kind of all-metal transistor can be compared with quasiconductor Si device, but energy consumption is low 10-20 times, density height
About 50 times, and radiation hardness, have memory function, can apply to following the various of quantum computer and patrols
Collect circuit, processor etc.；1994, IBM developed the read head utilizing giant magnetoresistance effect, made hard
Disk storage density improves 17 times, reaches 3Gbits/in2；2009, Seagate Technology used MgO magnetic
Magnetic head made by tunnel knot material, makes hard disc player disk storage density reach 800Gbits/in2。
At present, people achieve notable achievement in terms of the research of single barrier magnetic tunnel junction, but unipotential
Tunnel junction barrier material also faces many problems in actual applications, as TMR value will increase with applied voltage
Add and drastically decline.Zhang in 1997 et al. has foretold have quantizing resonance tunneling effect theoretically
The TMR value of bibarrier tunnel junction be 2 times of unipotential tunnel junction barrier, and TMR value is with bias
Increase and decline relatively slowly (joining the article Phys.Rev.B56 (1997) 5484 of Zhang et al.).And then
An important research topic is had become as based on the issuable quantum effect of MTJ.2005
Utilize the prediction of result of the first-principles calculations magnetic tunnel of Fe/MgO/Fe/Cr structure year Lu et al.
Spin correlation resonance tunneling effect (the ginseng that in the ferromagnetic metal layer Fe of knot, s having electronic quantum well states is caused
See the article Phys.Rev.Lett.94 (2005) 207210 of Zhong-Yi Lu et al.).2006, Wang
Et al. utilize first-principles calculations find this dual-potential magnetic tunnel based on MgO (001) potential barrier
Knot changes produced SQW distribution along with the thickness of intermediate layer ferrum.In the same year, Nozaki et al. is at this
Plant the tunnelling electricity finding to be caused by the quantum well states of electronics in middle iron layer in dual-potential magnetic tunnel
Lead the oscillation effect with bias.
But, the quantizing resonance tunneling effect of dual-potential magnetic tunnel based on MgO (001) potential barrier
Experimentally and inconspicuous, this also counteracts that spin electric device based on this quantum effect such as spins crystalline substance
The actual application of body pipe, spin diode, magneto-dependent sensor and agitator etc..Accordingly, it would be desirable to explore new
Barrier material, improve quantum effect thus detect easily by experiment, and realize it at novel device
Actual application in part.
Summary of the invention
Many problems of it is an object of the invention to overcome existing barrier material to face in actual applications and
Defect, it is provided that a kind of based on spinel-like structural barrier layer, there is the magnetic tunnel of notable quantum effect
Knot.This barrier layer is less with magnetospheric lattice mismatch, can have than relatively low bias-dependent,
The SQW resonance tunneling effect of high TMR value, high-breakdown-voltage and enhancing, such that it is able to extensively should
In spin transistor, spin diode, magneto-dependent sensor and agitator isospin electronics device.
According to the present invention one one exemplary embodiment, it is provided that a kind of MTJ, it comprises the steps that the first ginseng
Examine layer, magnetic conductive material formed and there is the fixing direction of magnetization；First barrier layer, is arranged on
Formed on described first reference layer and by insulant；Free layer, is arranged on described first barrier layer,
Formed by magnetic conductive material and its direction of magnetization freely can change in response to external magnetic field；And the
Two barrier layers, are arranged on described free layer and are formed by insulant, wherein, and described first potential barrier
Layer and described second barrier layer are respectively provided with spinel-like crystal structure.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: MgxAlyOzAnd ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: SixMgyOzAnd SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
In one example, in the range of described first barrier layer and described second barrier layer have 0.5-5nm
Thickness.
In one example, the thickness of described free layer can equal to or less than the average free of electronics therein
Journey.
In one example, described MTJ may also include that the second reference layer, is arranged on described second
On barrier layer, magnetic material formed and there is the fixing direction of magnetization.The magnetic of described second reference layer
Change direction and can be parallel to the direction of magnetization of described first reference layer.
In one example, described MTJ may also include that the 3rd barrier layer, is arranged on described second
On reference layer, insulant formed, and there is spinel-like crystal structure.
In one example, described 3rd barrier layer is formed by the material selected from following group: MgxAlyOz、
ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and
And x:y:z ≠ 1:2:4；SixMgyOz、SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
According to another one exemplary embodiment of the present invention, it is provided that a kind of MTJ, comprising: the first ginseng
Examine layer, magnetic conductive material formed and there is the fixing direction of magnetization；First barrier layer, is arranged on
Formed on described first reference layer and by insulant；Free layer, is arranged on described first barrier layer,
Formed by magnetic conductive material and its direction of magnetization freely can change in response to external magnetic field；And the
Two barrier layers, are arranged on described free layer and are formed by insulant, wherein, and described first potential barrier
Layer is mutually matched with the lattice paprmeter of described first reference layer and described free layer, and wherein, described second
Barrier layer is mutually matched with the lattice paprmeter of described free layer.
According to another one exemplary embodiment of the present invention, it is provided that a kind of spin electric device, it can include above-mentioned
Any one in MTJ.
According to yet another exemplary embodiment of the present invention, it is provided that a kind of spin diode, it comprises the steps that first
Reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；First barrier layer, is arranged
Formed on described first reference layer and by insulant；Free layer, is arranged on described first barrier layer
On, magnetic conductive material formed and its direction of magnetization freely can change in response to external magnetic field；The
Two barrier layers, are arranged on described free layer and are formed by insulant；First electrode, functionally connects
Receive described first reference layer；And second electrode, it is functionally connected to described free layer, wherein, institute
State the first barrier layer and described second barrier layer is respectively provided with spinel-like crystal structure.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: MgxAlyOzAnd ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: SixMgyOzAnd SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
In one example, described spin diode may also include that the second reference layer, is arranged on described second
On barrier layer, magnetic material form and have the fixing direction of magnetization, wherein, described second reference
The direction of magnetization of layer is parallel to the direction of magnetization of described first reference layer, and wherein, described second electrode merit
Described second reference layer it is connected on can.
In one example, described spin diode may also include that the 3rd barrier layer, is arranged on described second
On reference layer, insulant formed, and there is spinel-like crystal structure, wherein, the described 3rd
Barrier layer is formed by the material selected from following group: MgxAlyOz、ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,
0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4；SixMgyOz、SixZnyOz,
Wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
According to the another one exemplary embodiment of the present invention, it is provided that a kind of spin transistor, it comprises the steps that first
Reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；First barrier layer, is arranged
Formed on described first reference layer and by insulant；Free layer, is arranged on described first barrier layer
On, magnetic conductive material formed and its direction of magnetization freely can change in response to external magnetic field；The
Two barrier layers, are arranged on described free layer and are formed by insulant；Second reference layer, is arranged on
On described second barrier layer, magnetic conductive material formed, and there is the fixing direction of magnetization, described
The direction of magnetization of the second reference layer is parallel to each other with the direction of magnetization of described first reference layer；Emitter stage, merit
Described first reference layer it is connected on can；Base stage, is functionally connected to described free layer；And colelctor electrode,
Being functionally connected to described second reference layer, wherein, described first barrier layer and described second barrier layer are equal
There is spinel-like crystal structure.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: MgxAlyOzAnd ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
In one example, described first barrier layer and described second barrier layer are by selected from the material shape of following group
Become: SixMgyOzAnd SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
In one example, described spin transistor may also include that the 3rd barrier layer, is arranged on described second
On reference layer, insulant formed, and there is spinel-like crystal structure.
In one example, described 3rd barrier layer is formed by the material selected from following group: MgxAlyOz、
ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and
And x:y:z ≠ 1:2:4；SixMgyOz、SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
The MTJ based on the insulative barriers layer with spinel-like crystal structure that the present invention provides
There is plurality of advantages, such as: the lattice mismatch between barrier layer and magnetosphere is little, bias-dependent ratio
Relatively low, breakdown voltage is higher；Greatly reduce the interface in original MgO barrier magnetic tunnel junction
And defect electron state, enhance quantum effect, be greatly improved logical at certain additional threshold values bias
Crossing electric current and the tunneling magnetic resistance ratio (TMR) of MTJ, threshold values bias is main by magnetosphere
Material and choosing of thickness determine.This special current effect can also be by potential barrier centre
The externally-applied magnetic field direction of free layer and bias are controlled so that the MTJ of this potential barrier is permissible
Be applied to novel spin electric device design, as spin transistor, spin diode, magneto-dependent sensor and
Agitator etc., and the performance contributing to magnetic RAM (MRAM) isospin electronic device carries
Rise.Using the spin resonance tunneling transistor that this structure designs, base current is modulated signal, passes through
It makes the direction of magnetization of colelctor electrode change, so that the modulating mode phase of the signal of colelctor electrode and base current
Seemingly, i.e. there is resonance tunneling effect, under suitable conditions, the signal amplified can be obtained.Due to this common
The bandwidth of the current amplifier that tunnelling of shaking spin transistor makes depends on the direction of magnetization of colelctor electrode
Speed reversal, thus such current amplifier can change with the frequency of GHzs up to a hundred.
Accompanying drawing explanation
Fig. 1 illustrates the multiple structure of typical dual-potential magnetic tunnel；
Fig. 2 A and Fig. 2 B schematically shows the energy band diagram of structure shown in Fig. 1；
Fig. 3 illustrates the quantum effect observed result of dual-potential magnetic tunnel according to an embodiment of the invention；
Fig. 4 schematically shows the diode that spins according to an embodiment of the invention；
Fig. 5 schematically shows the diode that spins according to another embodiment of the present invention；
Fig. 6 schematically shows the spin diode according to further embodiment of this invention；
Fig. 7 schematically shows spin diode according to yet another embodiment of the invention；
Fig. 8 schematically shows the spin diode according to another embodiment of the present invention；
Fig. 9 A and Fig. 9 B illustrates the energy band diagram of the spin diode shown in Fig. 8；
Figure 10 schematically shows spin transistor according to an embodiment of the invention；
Figure 11 schematically shows spin transistor according to another embodiment of the present invention；And
Figure 12 schematically shows the spin transistor according to further embodiment of this invention.
Detailed description of the invention
Fig. 1 illustrates that the multiple structure of typical dual-potential magnetic tunnel 100, Fig. 2 A and Fig. 2 B show
Meaning property illustrates the energy band diagram of the dual-potential magnetic tunnel 100 shown in Fig. 1.It should be noted that to make Fig. 2 A
Corresponding with the multiple structure shown in Fig. 1 with the energy band diagram shown in Fig. 2 B, in order to the energy shown in understanding
Band figure, Fig. 1 illustrates that dual-potential magnetic tunnel 100 is wrapped in the way of being laterally stacked rather than being stacked up and down
The multiple layers included.
With reference to Fig. 1, dual-potential magnetic tunnel 100 include first reference layer the 102, first barrier layer 104,
Free layer the 106, second barrier layer 108 and the second reference layer 110.First reference layer 102, free layer
106 and second reference layer 110 can be formed by magnetic material, such as ferrimagnet, semimetal magnetic material
Material and dilute magnetic semiconductor material etc..Can be used for forming the first reference layer 102, free layer 106 and the second ginseng
The example of the ferrimagnet examining layer 110 includes but not limited to Fe, Co, Ni or these feeromagnetic metals
Alloy, the rare earth metal of such as Sm, Gd, Nd etc, such as CoFe, CoFeB, NiFeCr,
CoFeSiB, GdY and NiFe are (such as Ni81Fe19Deng) etc ferromagnetic alloy.Can be used for forming
The example of the semimetal magnetic material of one reference layer 102, free layer 106 and the second reference layer 110 includes
But it is not limited to Fe3O4、CrO2、CoMnSi、CoFeAl、CoFeSi、CoMnAl、CoFeMnAl、
CoFeAlSi、CoMnGe、CoMnGa、CoMnGeGa、LaSrMnO、LaGaMnO、NiMnSb、
CoMnSb etc..Can be used for forming the first reference layer 102, free layer 106 and the second reference layer 110
The example of dilute magnetic semiconductor material includes but not limited to GaAs, InAs, GaN and ZnTe that Mn adulterates,
ZnO, TiO of Fe, Co, Ni, V, Mn doping2、HfO2And SnO2Deng.First reference layer 102
The thickness each with the second reference layer 110 can be 1-50nm, wherein the thickness of the first reference layer 102
Can be mutually the same with the thickness of the second reference layer 110, it is also possible to different from each other.The thickness of free layer 106
Degree can be 0.5-25nm, it is preferable that the thickness of free layer 106 is set to and is formed in its material
Electron mean free path is suitable.
Each in first reference layer 102 and the second reference layer 110 has the fixing direction of magnetization, and
And the direction of magnetization of the two is parallel to each other, such as shown in the arrow in Fig. 1 straight up.Certainly,
The direction of magnetization of one reference layer 102 and the second reference layer 110 can also (not shown) straight down.Can
To take multiple means to fix first reference layer 102 and the direction of magnetization of the second reference layer 110.Such as,
The first pinning layer can be formed (not in the side contrary with the first barrier layer 104 of the first reference layer 102
Illustrate) carry out pinning and live the direction of magnetization of the first reference layer 102, and at the second reference layer 110 with
The side that two barrier layers 108 are contrary forms the second pinning layer (not shown) and carrys out pinning and live the second reference layer 110
The direction of magnetization.First pinning layer and the second pinning layer is each can be formed by antiferromagnet, antiferromagnetic material
The example of material include but not limited to the alloy of Ir, Fe, Rh, Pt, Pd and Mn or CoO, NiO,
PtCr etc..First pinning layer and each thickness of the second pinning layer can be 1-50nm.Or, permissible
Make the first reference layer 102 and the second reference layer 110 have bigger coercivity, such as, select coercivity relatively
High material forms the first reference layer 102 and the second reference layer 110, makes the first reference layer 102 and
Two reference layers 110 are formed as having bigger thickness, etc..
The direction of magnetization of free layer 106 can be freely, can change with external magnetic field, thus with
First reference layer 102 is parallel with the direction of magnetization of the second reference layer 110 or antiparallel state, is formed double
Two kinds of magneto-resistor states of the high-impedance state (antiparallel) of barrier magnetic tunnel junction and low resistance state (parallel).From
Preferably formed by the soft magnetic materials that coercivity is less by layer 106, and there is preferable crystal structure, with
Ensure the experimental observation ability of quantum effect.
First barrier layer 104 and the second barrier layer 108 are formed by insulant, thus form potential barrier.
The inventors discovered that, the material of the first barrier layer 104 and the second barrier layer 108 selects and crystal structure pair
Significant impact is had in quantizing resonance tunneling effect.Dual-potential magnetic tunnel 100 can be at the first barrier layer
104 and second free layers 106 between barrier layer 108 form s having electronic quantum well states, thus produces
Raw quantizing resonance tunneling effect.As applying bias V=0, most spin directions s of free layer 106
Having electronic (how son) can be by the density of states (density of states, DOS) of two dimension Brillouin zone point
First-principles calculations is given, and there is several spike in DOS it can be seen that near fermi level,
The quantum well states of the how sub-electronics that they have distinguished corresponding in free layer 106.From the amount that fermi level is nearest
The bias threshold values that the level of energy E (unit: electron-volt) of sub-trap state correspond to produce quantum effect is big
Little (unit: volt).The amount that dual-potential magnetic tunnel resonance tunnel-through is caused by these quantum well states
Sub-effect can be at electric current with the I-V curve of bias relation and tunnel knot tunneling magnetic resistance (TMR) value
Find out with the relation of bias.
Free layer 106 between the first barrier layer 104 and the second barrier layer 108 and the first reference layer
102 and second the direction of magnetization of reference layer 110 parallel to each other time, the many sons of s band in free layer 106
Quantum well states will affect the transport property of dual-potential magnetic tunnel 100.As applying bias V=0, the
The fermi level E of the electronics in one reference layer 102FEnergy away from the how sub-electronics of s band in free layer 106
, the most there is not resonance tunnel-through, as shown in fig. 2 in level position E.When applying bias V is gradually increased
During to a threshold values biased position so that fermi level EFThe level of energy E of neighbouring how sub-quantum well states
Within entering into bias range, as shown in Figure 2 B.Now, the first reference layer 102 transports electronics
Resonating with the electron energy level in trap, in trap, the how sub-electronic state of s band participates in transporting by quantum Interference
Journey, increases in a leap by a relatively large margin by making to have now by the electric current of bibarrier tunnel junction.Due in free layer 106
The quantum well states of electronics be spin correlation (how sub-quantum well states), so only issuing at parallel condition
Raw this quantum effect.When making free layer 106 and the first and second references by changing externally-applied magnetic field
Layer 102,110 the direction of magnetization antiparallel time, there is not this quantum effect.Therefore free layer 106
This quantizing resonance tunneling effect produced can control the magnetization side of free layer 106 by externally-applied magnetic field
To and carry out ON/OFF control.
And, quantum well states E of free layer 106 is relative to fermi level EFPosition depend primarily on
The material of the first and second reference layers 102,110 of both sides and the thickness of free layer 106.Therefore,
If have selected the material of the first and second reference layers 102,110, Fermi's energy of the most whole MTJ
Level is fixing, then can control to produce the threshold values of this quantum effect by changing the thickness of free layer 106
Bias value.
Although having foretold the existence of quantizing resonance tunneling effect, but do not see the most always
Measure significant quantizing resonance tunneling effect.As it was previously stated, the inventors discovered that, in order to realize experimentally
Observable quantum effect, in addition to free layer 106 should have good crystal structure, with free layer
The material of 106 the first adjacent barrier layers 104 and the second barrier layer 108 selects with crystal structure the most very
Important.In an exemplary embodiment of the invention, the first barrier layer 104 and material of the second barrier layer 108
Material is selected from MgxAlyOzAnd ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.First barrier layer 104 and the second barrier layer 108
Material is further selected from SixMgyOzAnd SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.Preferably, the first barrier layer 104 and the second potential barrier
Layer 108 all has spinel-like crystal structure.
Experimentally have been found that MgO monocrystalline is as the quantum in the dual-potential magnetic tunnel of barrier layer
Resonance tunneling effect is the most inconspicuous, has the Mg of perfect spinel crystal structurexAlyOz、ZnxAlyOz、
SixMgyOzAnd SixZnyOzWhen (wherein x:y:z=1:2:4) is as barrier layer, quantizing resonance tunneling effect
The most inconspicuous.But the inventors discovered that, when using the insulated by oxide with spinel-like crystal structure
When body is as abarrier layer material, it is possible to achieve significantly quantum effect.Term " spinel-like " refers to
Such a crystal structure, it is close with spinel crystal structure, but due to the ratio between element with
And occupy-place is different from elemental ratio 1:2:4 in perfect spinel structure, so not being the most that perfect point is brilliant
Stone crystal structure.In spinel-like crystal structure, due to the change of component ratio, each element is at lattice
In position unlike in perfect spinel crystal structure so in order and fixing, but may show certain
Unordered and the randomness of degree, the position that such as should be occupied by elements A in some structure cell Central Plains is the most first
Element B occupies.Being additionally, since the difference of component ratio, some position, such as but not limited to oxygen element
Position, it is possible that room.Therefore, although spinel-like structural refers to tie with spinelle generally
Structure is similar, but presents again the crystal structure of certain random difference in detail.Experiment finds, for
Typical material MgxAlyOz、ZnxAlyOz、SixMgyOzAnd SixZnyOzFor, work as component ratio
During x:y:z=1:2:4, it forms perfect spinel crystal structure, but quantum effect when being used as barrier layer
And it is inconspicuous；And when x:y:z is not equal to 1:2:4, it forms " spinel-like " being similar to spinelle
Crystal structure, now quantum effect will become obvious.Analyzing further and show, this is Lattice Matching institute
The effect brought.The lattice paprmeter of MgO monocrystalline and spinel structure typically greater than forms adjacent ginseng
Examining the lattice paprmeter of the magnetic material of layer or free layer, therefore its interface lattice mismatch is relatively big, exists more
Interfacial state and defect electron state.Now, even if meeting resonance tunnel-through condition, owing to resonance tunnel-through is main
Participated in by the how sub-electronics of s band, and the how sub-electronics of s band is easy to be scattered in interface, so tunnelling is electric
Flowing little, quantum effect is the most notable.And " spinel-like " crystal structure is provided that and adjacent first and
The lattice paprmeter that two reference layers 102,110 and free layer 106 more mate, thus greatly reduce boundary
The face density of states and defect electron state so that resonant tunnel current is less scattered in interface, thus realizes
The quantizing resonance tunneling effect that more significantly, experimentally can easily observe.The most also find, γ
The Al of phase2O3Monocrystalline, it also has spinel-like crystal structure, also can realize notable when it is as potential barrier
Quantum effect.
Therefore, in an embodiment of the present invention, the first barrier layer 104 and the second barrier layer 108 are formed
Material is selected from: MgxAlyOzAnd ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4；SixMgyOzAnd SixZnyOz, wherein
0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
In above-mentioned chemical formula, x+y+1 can be equal to 1.And preferably, the first barrier layer 104 and second
Barrier layer 108 is all formed as spinel-like crystal structure, to realize having more significant quantizing resonance tunnel
Wear the dual-potential magnetic tunnel 100 of effect.First barrier layer 104 and the second barrier layer 108 are each
Thickness can be 0.5-5nm, preferably 1-4nm.First barrier layer 104 and the material of the second barrier layer 108
Material can be mutually the same, it is also possible to different from each other.And, the first barrier layer 104 and the second barrier layer 108
Thickness can be mutually the same, it is also possible to different from each other.
Table 1 below illustrates some concrete example and comparative examples of dual-potential magnetic tunnel 100, and
The experimentally observed result of quantum effect.Although it is not shown, these examples are formed on SiO2On substrate,
But it is not limited to this, such as, can also be formed in other dielectric substrate.Wherein, for simplicity,
First reference layer 102 is formed from the same material as identical thickness, the first gesture with the second reference layer 110
Barrier layer 104 is formed from the same material as identical thickness with the second barrier layer 108.It should be understood that
It is that the material of the first reference layer 102 and/or thickness can be differently configured from the second reference layer, the first barrier layer
The material of 104 and/or thickness can be differently configured from the second barrier layer 108.
Table 1
Should be understood that in superincumbent comparative example 2 and 3, the first and second barrier layers 104,108 are formed
For perfect spinel crystal structure, its quantum effect is inconspicuous.Although in the reality listed by table 1 above
Executing in example, the first barrier layer 104 and the second barrier layer 108 are manufactured from the same material, but the first potential barrier
Layer 104 and the second barrier layer 108 can also be made from a variety of materials, reality as shown in Table 2 below
Execute example.
Table 2
Fig. 3 illustrates the quantum effect experimental observations of the present invention one example.As it is shown on figure 3, suitably
Bias voltage V in the range of, the second dervative of I/V, i.e. d2I/dV2, occur in that significantly fluctuation, often
Individual crest is corresponding to a quantum well states in free layer 106.This shows, sees in a structure of the in-vention
Observe quantizing resonance tunneling effect clearly.
Although described above is the MTJ that barrier layer based on spinel-like structural makes can obtain
Observable quantum effect must be tested, but the invention is not limited in this.As it was previously stated, work as barrier layer
And when the interface between adjacent magnetic layer has good Lattice Matching, interfacial state can be reduced, it is to avoid spin
The scattering of electronics, thus realize significant quantum effect.Therefore, the barrier layer of the present invention is not limited to
Spinel-like structural, if but the magnetosphere (such as reference layer and free layer) that is adjacent of its lattice paprmeter
Lattice paprmeter match.
Described above is the typical structure of dual-potential magnetic tunnel 100.But those skilled in the art will
Understand, it is also possible to this structure is carried out many changes.Such as, the second reference layer 110 can be omitted.
Now, current path is through the first barrier layer 104 to free layer 106 from the first reference layer 102, subsequently
It is brought out.Even if it should be noted that omission the second reference layer 110, the second barrier layer 108 also should be retained,
Because it is used for forming SQW in free layer 106 together with the first barrier layer 104.Or, permissible
Omit the first reference layer 102, current path be from the second reference layer 110 through the second barrier layer 108 to from
By layer 106, then it is brought out.Although further, it should be appreciated that above with " first ", " second "
Describe each layer etc. ordinal number, but these ordinal numbers be only used for distinguishing a layer and another layer,
And do not limit their any order.In other words, " first " layer described above can also be described as
" second " layer, without departing from the scope of the present invention.
Describe below with reference to accompanying drawings and include above-mentioned class MTJ (double potential barrier as described above
MTJ 100) the embodiment of various spin electric devices.
Fig. 4 illustrates the spin diode 200 including dual-potential magnetic tunnel.As shown in Figure 4, spin
Diode 200 is double potential barrier pinning type MTJ resonance tunnel-through diode, and it includes being formed at substrate
Laminated construction on 202.Substrate 202 can be insulator substrates, such as, include the material selected from following group
Material: Si/SiO2、MgO、GaAs、SrTiO3、LaAlO3And MgAl2O4Deng.At substrate 202
On sequentially form cushion the 204, first pinning layer the 206, first reference layer the 102, first barrier layer 104,
Free layer the 106, second barrier layer the 108, second reference layer the 110, second pinning layer 208 and cap rock 210.
Cushion 204 can be made up of metal or alloy, such as Cr, CoFe, Ta, Ru etc., can have
There is the thickness between 5-100nm.Cushion 204 is used for improving the first pinning layer 206 and substrate thereon
Between 202 and cohesive, it is provided that the good surface for deposition the first pinning layer 206.Real at some
Executing in example, cushion 204 can omit.First pinning layer the 206, first reference layer the 102, first potential barrier
Layer 104, free layer the 106, second barrier layer the 108, second reference layer 110 and the second pinning layer 208
Having been described above being discussed in detail with reference to Fig. 1, here is omitted.Cap rock 210 can be by corrosion resistant
Losing and have the metal formation of satisfactory electrical conductivity, such as Ta, Au etc., to protect following multiple structure.
First reference layer 102 may be coupled to the first electrode 101, and cap rock 210 may be coupled to the second electrode 201.
Should be understood that the first electrode 101 can also be connected to cushion 204 or the first pinning layer 206, the second electricity
Pole 201 can also be connected to the second pinning layer 208 or the second reference layer 110.Here it is possible to say first
Electrode 101 is functionally connected to the first reference layer 102, and the second electrode 201 is functionally connected to the second ginseng
Examine layer 110." functionally connect " and refer to realize circuit function and electrode must be connected (directly
Or indirectly) to a certain layer, such as the first reference layer 102 and the second reference layer 110.In some embodiments
In, owing to the second pinning layer 208 itself has good corrosion resistance and electric conductivity, so cap rock 210
Also can be omitted.
The method of the spin diode 200 of explanation preparation below.Magnetron sputtering apparatus can be utilized to deposit figure
Spin diode 200 shown in 4.During deposition, add the plane induced magnetic field of 1000Oe, therefore the first ginseng
Examine the direction of magnetization of layer 102 and the second reference layer 110 respectively by the first pinning layer 206 and the second pinning layer
208 are fixed into same direction, and the direction of magnetization of free layer 106 is freely.The such as thickness is selected to be
MgO (001) substrate of 0.5mm is as substrate, and is better than 5 × 10 with vacuum on magnetron sputtering apparatus-7
Handkerchief, sedimentation rate is 0.1nm/s, and during deposition, Ar Pressure is 0.07 handkerchief, deposits on the substrate 202
The cushion 204 of Cr (40nm)/CoFe (5nm), can carry out thermal anneal process and be formed more preferably after deposition
Crystal orientation and flatness；Then on cushion 204, it is sequentially depositing the IrMn that thickness is 15nm make
Being the first pinning layer 206, deposit thickness is first reference layer 102 of the Fe of 5nm, and deposit thickness is
The Mg of 2nm0.29Al0.23O0.48(001) as the first barrier layer 104, the Fe of deposition 5nm is as freedom
Layer 106, deposit thickness is the Mg of 2nm0.29Al0.23O0.48(001) as the second barrier layer 108, deposition
The Fe of 5nm is as the second reference layer 110, and deposit thickness is that the IrMn of 15nm is as the second pinning layer
208, finally deposit Ta (5nm)/Ru (5nm) as cap rock 210.The growth conditions of above-mentioned multilayer film is such as
Under: standby end vacuum: 5 × 10-7Handkerchief；Sputtering high purity argon air pressure: 0.07 handkerchief；Sputtering power: 120
Watt；Growth temperature: room temperature；Growth rate: 0.3～1.1 angstroms per second；Growth time: film thickness/life
Long speed.
Then utilize micro fabrication, prepare the tunnel knot diode of micron-scale, and on interface
Build the electrode for measuring.(1) on the magnetic multiplayer membrane sample deposited, positive photoresist is coated
(S1813), 4000 turns/min of spin coating, 1 minute time, glue thickness about 1 micron, under 95 degrees Celsius before
Dry 1 minute, then utilize the mask plate of hearth electrode, carry out contact uv-exposure, generally 15-20
Second；Developer solution MF319 is utilized to carry out developing 30 seconds, in ultra-pure water fixing 30 seconds, after bake 1 point
Clock；Sample is put in Ar ion etching machine, carries out Ar ion etching, obtain the shape of hearth electrode,
Etch period is determined by the thickness of the etch rate demarcated in advance and multilayer film；Sample is put into acetone
The middle photoresist removing residual.(2) photoresist is coated, in order to drop at the sample surfaces forming hearth electrode again
The difficulty of low follow-up lift-off (lift-off) technique, selects negative photoresist (N440), spin coating 4000 turns
/ min, 1 minute time, glue thickness about 4 microns, 90 degrees Celsius of lower front bakings 5 minutes.Recycling interface
Mask plate, is exposed 200 seconds, develops about 2 minutes in developer solution D332, until sample table
The decorative pattern of face glue disperses, fixing 30 seconds；Finally carry out Ar ion etching, carve the first barrier layer 104
, obtain the shape in interface.(3) SiO that magnetron sputtering deposition thickness is about 100nm is utilized2,
For making interface mutually insulated, and hearth electrode 101 with will top electrode 201 mutual insulating of deposition；Again
Carrying out lift-off method (lift-off), put into by sample in acetone or glue-dispenser, ultrasonic depolymerization, covering at knot
Photoresist in district and SiO2Together peel off, make interface expose.(4) on sample, about 80nm is deposited
Au thick for thick Cu and 20nm, as top electrode layer, coats positive photoresist at sample surfaces again
(S1813), the mask plate of top electrode is utilized to be exposed, developing fixing (front baking and the time of exposure same end
Electrode)；Carry out Ar ion etching again, thus obtain the top electrode 201 of MTJ 200, by sample
Product are put in acetone, remove cull.Have at the bottom of MTJ and additional measurement with regard to what this obtained preparing
Electrode 101 and the unit of top electrode 201.I.e. obtain the double potential barrier pinning type MTJ of the present invention certainly
Rotation resonance tunnel-through diode 200.
Should be understood that and employ many details above when describing manufacturing process, including material and parameter etc.,
This is merely to make those skilled in the art present invention convenient to carry out, and the invention is not limited in that these are special
Determine details.Conversely, for these details, such as material and parameter etc., those skilled in the art are at this
Various change can be carried out, without departing from the scope of the present invention under bright teaching.
When externally-applied magnetic field makes the direction of magnetization of free layer 106 and the first and second reference layers 102,110 put down
During row, the quantum well states of the many sons of s band in the Fe of free layer 106 will affect the defeated of bibarrier tunnel junction
Fortune character.When applying bias V increases to threshold values biased position (about 0.1～0.3 volt), transport tunnel
Wear electronics and the electron energy level resonance in SQW, have making relatively now by the electric current of bibarrier tunnel junction
Significantly increase in a leap.
Fig. 5 illustrates double potential barrier non-pinning type MTJ resonance tunnel-through two according to an embodiment of the invention
Pole pipe 300.As it is shown in figure 5, double potential barrier non-pinning type MTJ resonance tunnel-through diode 300 with
Double potential barrier pinning type MTJ resonance tunnel-through diode 200 shown in Fig. 4 has essentially identical knot
Structure, in addition to omitting the first pinning layer 206 and the second pinning layer 208.In order to make the first reference layer 102
Fix with the direction of magnetization of the second reference layer 110, can use and there is bigger coercitive magnetic material carry out shape
Become them, or form it into there is bigger thickness.Additionally, deposition the first reference layer 102 He
During the second reference layer 110, the plane induced magnetic field of such as 100Oe can be applied, make their magnetization side
To being induced in said direction.Other aspects of MTJ resonance tunnel-through diode 300 and magnetic
Tunnel junction resonance tunneling diode 200 is identical, and here is omitted.
Although it will also be appreciated that and described above is pinning design and the design of non-pinning, but above two
Design can mix setting neatly.Such as, a reference layer can use pinning to design, and another
Reference layer can use non-pinning to design, and also referred to as designs from pinning.These can be by those skilled in the art
Select flexibly with technique convenience according to actual needs.
Fig. 6 illustrates double potential barrier pinning type MTJ resonance tunnel-through two pole according to an embodiment of the invention
Pipe 400.As shown in Figure 6, double potential barrier pinning type MTJ resonance tunnel-through diode 400 have with
The structure that double potential barrier pinning type MTJ resonance tunnel-through diode 200 shown in Fig. 4 is identical, except
Outside hearth electrode 401 is arranged on free layer 106.Correspondingly, the interface described above in relation to Fig. 4
In etching step (2), it is only necessary to etched second barrier layer 108, without as diode 200
The most etched first barrier layer 104.Other aspects of diode 400 are similar with diode 200, this
Place repeats no more.
It should be understood that in the diode 400 shown in Fig. 6, the first barrier layer 104 is for second
Barrier layer 108 forms SQW together in free layer 106, and the first barrier layer 104 is not joined itself
With in electron transport.Will also be appreciated that the first reference layer 102 below the first barrier layer 104,
First pinning layer 206 and cushion 204 all can be omitted.
Fig. 7 illustrates double potential barrier non-pinning type MTJ resonance tunnel-through two according to an embodiment of the invention
Pole pipe 500.As it is shown in fig. 7, double potential barrier non-pinning type MTJ resonance tunnel-through diode 500 has
There is the structure that pinning type MTJ resonance tunnel-through diode 300 non-with the double potential barrier shown in Fig. 5 is identical,
In addition to hearth electrode 501 is arranged on free layer 106.Correspondingly, above in relation to Fig. 5 (or
Say, Fig. 4) in the interface etching step (2) that describes, it is only necessary to etched second barrier layer 108,
Without the first barrier layer 104 etched as diode 300.Other aspects of diode 500 with
Diode 300 is similar to, and here is omitted.
It should be understood that in the diode 500 shown in Fig. 7, the first barrier layer 104 is for second
Barrier layer 108 forms SQW together in free layer 106, and the first barrier layer 104 is not joined itself
With in electron transport.Will also be appreciated that the first reference layer 102 below the first barrier layer 104
All can be omitted with cushion 204.
Fig. 8 illustrates three potential barriers non-pinning type MTJ resonance tunnel-through two according to an embodiment of the invention
Pole pipe 600.As shown in Figure 8, three potential barriers non-pinning type MTJ resonance tunnel-through diode 600 has
There is the structure that pinning type MTJ resonance tunnel-through diode 300 non-with the double potential barrier shown in Fig. 5 is identical,
In addition to the 3rd barrier layer 602 is formed between the first reference layer 102 and substrate 202.Preferably,
Form the material of the 3rd barrier layer 602 to be also selected from above-mentioned can be used for and form the first barrier layer 104 and the second gesture
Those materials of barrier layer 108, in order to together with the first barrier layer 104 in the first reference layer 102 shape
Become good SQW.Due to the 3rd barrier layer 602 and be not involved in electron transport, so its thickness is general
The most do not limit, such as, can be formed thicker.Preferably, the thickness of the 3rd barrier layer 602 can be
More than 0.5nm.Additionally, the 3rd barrier layer 602 can also play the effect of cushion, for thereon first
Reference layer 102 provides good deposition surface.The formation process of diode 600 can be with diode 300
Similar, here is omitted.
Fig. 9 A and 9B illustrates the energy band diagram of schematic diode 600, and wherein Fig. 9 A illustrates bias voltage
V is situation when zero, and Fig. 9 B illustrates when bias voltage V reaches threshold voltage and resonance tunnel-through occurs
Situation.As shown in Figure 9 A, as applying bias V=0, the quantum of the electronics in the first reference layer 102
The level of energy E of trap state1Level of energy E away from the how sub-electronics of s band in free layer 1062, now
There is not resonance tunnel-through.When applying bias V progressively increases to threshold values bias E2-E1Level time so that
Level of energy (V+E in first reference layer 1021) enter near the energy level in free layer 106,
The now electronics in the SQW in the first reference layer 102 and the electronic energy in the SQW of free layer 106
Level resonance, participates in transport process by quantum Interference, will make the electric current now by tunnel knot
Have and increase in a leap by a relatively large margin.
Figure 10 illustrates that double potential barrier pinning type MTJ resonance tunnel-through is brilliant according to an embodiment of the invention
Body pipe 700.As it is shown in fig. 7, MTJ resonant tunneling thin film 700 have with shown in Fig. 4
The structure that MTJ resonance tunnel-through diode 200 is identical, except being also connected to the 3rd electrode 701
Outside free layer 106.In MTJ resonant tunneling thin film 700, the first electrode 101 can be used
Making emitter stage, the second electrode 201 can be used as colelctor electrode, and the 3rd electrode 701 can be used as base stage.
When free layer the 106, first reference layer 102 residing for base stage, emitter and collector and the second ginseng
Examine the direction of magnetization of layer 110 when being in parastate, the quantum well states of the many sons of s band in free layer 106
The transport property of bibarrier tunnel junction will be affected.Between emitter and collector, it is biased V increase to
During threshold values biased position (the most about 0.1～0.3 volt), transport tunelling electrons and the electricity in SQW
Sub-energy level resonates, and increases in a leap making to have now by the collector current of bibarrier tunnel junction by a relatively large margin.And
When the direction of magnetization of base stage and the direction of magnetization of colelctor electrode are contrary, although most spin subbands in emitter stage
Electronics owing to can not mate by band on the contrary, by strong scattering process, only mutually with the direction of magnetization of base stage
There is little tunelling electrons owing to being entered colelctor electrode by impurity scattering or other effects, now colelctor electrode
Electric current is the least.Further, when free layer the 106, first reference residing for base stage, emitter and collector
When the direction of magnetization of layer 102 and the second reference layer 110 is in parastate, can be by changing base stage
The method of voltage/current modulates the height of SQW energy level in base stage, so that tunelling electrons is at emitter stage
With inter-collector generation resonance tunnel-through, make the electric current that colelctor electrode is amplified.
The method of available magnetron sputtering prepares MTJ resonant tunneling thin film 700.During deposition,
Add the plane induced magnetic field of 1000Oe, therefore the first reference layer 102 and magnetization of the second reference layer 110
Direction is fixed into same direction, free layer 106 by the first pinning layer 206 and the second pinning layer 208 respectively
The direction of magnetization be freely.Select thickness be MgO (001) substrate of 0.5mm as substrate,
And it is better than 5 × 10 with vacuum on magnetron sputtering apparatus-7Handkerchief, sedimentation rate is 0.1nm/s, argon during deposition
Air pressure is 0.07 handkerchief, deposits the cushion 204 of Cr (40nm)/CoFe (5nm) over the substrate, deposition
After can carry out thermal anneal process to form more preferable crystal orientation and flatness；Then on cushion 204
Being sequentially depositing IrMn that thickness is 15nm as the first pinning layer 206, deposit thickness is the Fe of 5nm
The first reference layer 102, deposit thickness is the Mg of 2nm0.29Al0.23O0.48(001) as the first barrier layer
104, the Fe of deposition 5nm is as free layer 106, and deposit thickness is the Mg of 2nm0.29Al0.23O0.48(001)
As the second barrier layer 108, the Fe of deposition 5nm is as the second reference layer 110, and deposit thickness is 15nm
IrMn as the second pinning layer 208, finally deposit Ta (5nm)/Ru (5nm) as cap rock 210.On
State the growth conditions of multilayer film: for end vacuum: 5 × 10-7Handkerchief；Sputtering high purity argon air pressure: 0.07
Handkerchief；Sputtering power: 120 watts；Growth temperature: room temperature；Growth rate: 0.3～1.1 angstroms per second；Growth
Time: film thickness/growth rate.
Then utilize micro fabrication, prepare the tunnel junction transistor of micron-scale, and on interface
Build emitter stage, base stage and the colelctor electrode for measuring.(1) on the magnetic multiplayer membrane sample deposited
Coat positive photoresist (S1813), 4000 turns/min of spin coating, 1 minute time, glue thickness about 1 micron,
95 degrees Celsius of front bakings 1 minute, then utilize the mask plate of hearth electrode, carry out contact uv-exposure, and one
As be the 15-20 second；Developer solution MF319 is utilized to carry out developing 30 seconds, then with ultra-pure water fixing 30 seconds,
After bake 1 minute；Sample is put in Ar ion etching machine, carry out Ar ion etching, obtain hearth electrode
The shape of (emitter stage), etch period is by the thickness of the etch rate demarcated in advance and multilayer film certainly
Fixed；Sample is put in acetone the photoresist removing residual.(2) again at the sample surfaces forming hearth electrode
Coat photoresist, in order to reduce the difficulty of follow-up lift-off (lift-off) technique, select negative photoresist
(N440), 4000 turns/min of spin coating, 1 minute time, glue thickness about 4 microns, 90 degrees Celsius of front bakings 5
Minute.The mask plate in recycling interface, is exposed 200 seconds, develops 2 minutes in developer solution D332
Left and right, until the decorative pattern of sample surfaces glue disperses, fixing 30 seconds；Finally carry out Ar ion etching, carve
Cross the first barrier layer 104, obtain the shape in interface.(3) utilizing magnetron sputtering deposition thickness is 100
The SiO of about nm2, it is used for making interface mutually insulated, and hearth electrode is mutual with the top electrode that will deposit
Insulation；Carry out Metal liftoff method (lift-off) again, sample is put in acetone or glue-dispenser, ultrasonic depolymerization,
The photoresist covered on interface and SiO2Together peel off, make interface expose.(4) further weigh
Multiple above gluing, expose, develop, etch, the micro-nano processing technique such as lift-off and deposition, prepare base
Pole and colelctor electrode.I.e. obtain double potential barrier pinning type MTJ spin resonance tunnelling crystalline substance pole pipe 700.
Figure 11 illustrates double potential barrier non-pinning type MTJ resonance tunnel-through according to an embodiment of the invention
Brilliant pole pipe 800.As shown in figure 11, double potential barrier non-pinning type MTJ resonance tunnel-through crystalline substance pole pipe 800
There is the multiple structure identical with double potential barrier pinning type MTJ spin resonance tunnelling crystalline substance pole pipe 700,
In addition to not including the first pinning layer 206 and the second pinning layer 208.In order to make the first reference layer 102
Fix with the direction of magnetization of the second reference layer 110, can use and there is bigger coercitive magnetic material carry out shape
Become them, or form it into there is bigger thickness.Additionally, deposition the first reference layer 102 He
During the second reference layer 110, the plane induced magnetic field of such as 1000Oe can be applied, make their magnetization
Direction is induced in said direction.Double potential barrier non-pinning type MTJ resonance tunnel-through crystalline substance pole pipe 800
Other aspects can be identical with double potential barrier pinning type MTJ spin resonance tunnelling crystalline substance pole pipe 700,
Here is omitted.
Figure 12 illustrates three potential barriers non-pinning type MTJ resonance tunnel-through according to an embodiment of the invention
Brilliant pole pipe 900.As shown in figure 12, three potential barriers non-pinning type MTJ resonant tunneling thin film 900
There is pinning type MTJ resonant tunneling thin film 800 non-with the double potential barrier shown in Figure 11 identical
Structure, in addition to the 3rd barrier layer 902 is formed between the first reference layer 102 and substrate 202.Excellent
Selection of land, can be selected from above-mentioned for forming the first barrier layer for forming the material of the 3rd barrier layer 902
104 and second those material of barrier layer 108.Owing to the 3rd barrier layer 902 actually and is not involved in electricity
Son transports, so the typically no restriction of its thickness, such as, can be formed thicker.Preferably, the 3rd gesture
The thickness of barrier layer 902 can be more than 0.5nm.Additionally, the 3rd barrier layer 902 can also play cushion
Effect, provide good deposition surface for the first reference layer 102 thereon.The formation of transistor 900
Technique can be similar with transistor 800, and here is omitted.
The MTJ based on the insulative barriers layer with spinel-like crystal structure that the present invention provides
There is plurality of advantages, such as: the lattice mismatch between barrier layer and magnetosphere is little, bias-dependent ratio
Relatively low, breakdown voltage is higher；Greatly reduce the interface in original MgO barrier magnetic tunnel junction
And defect electron state, enhance quantum effect, be greatly improved logical at certain additional threshold values bias
Crossing electric current and the tunneling magnetic resistance ratio (TMR) of MTJ, threshold values bias is main by magnetosphere
Material and choosing of thickness determine.This special current effect can also be by potential barrier centre
The externally-applied magnetic field direction of free layer and bias are controlled so that the MTJ of this potential barrier is permissible
Be applied to novel spin electric device design, as spin transistor, spin diode, magneto-dependent sensor and
Agitator etc., and the performance contributing to magnetic RAM (MRAM) isospin electronic device carries
Rise.Using the spin resonance tunneling transistor that this structure designs, base current is modulated signal, passes through
The direction of magnetization making base stage changes, so that the signal of colelctor electrode is similar to the modulating mode of base current,
I.e. there is resonance tunneling effect, under suitable conditions, the signal amplified can be obtained.Due to this resonance
The bandwidth of the current amplifier that tunnelling spin transistor makes depends on that the direction of magnetization of colelctor electrode is anti-
Rotary speed, thus such current amplifier can change with the frequency of GHzs up to a hundred.
Although describing the present invention above with reference to one exemplary embodiment, but the invention is not restricted to this.Ability
Field technique personnel it is readily apparent that in the case of without departing from the scope of the present invention and thought, Ke Yijin
Variations and modifications in row form and details.The scope of the present invention only by claims and etc.
Valency thing defines.
Claims (20)
1. a MTJ, including:
First reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；
First barrier layer, is arranged on described first reference layer and is formed by insulant；
Free layer, is arranged on described first barrier layer, magnetic conductive material is formed and its magnetization side
To freely changing in response to external magnetic field；And
Second barrier layer, is arranged on described free layer and is formed by insulant,
Wherein, the insulant of described first barrier layer and described second barrier layer is respectively provided with spinel-like crystalline substance
Body structure.
2. MTJ as claimed in claim 1, wherein, described first barrier layer and described second
Barrier layer is formed by the material selected from following group: MgxAlyOzAnd ZnxAlyOz, wherein
0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
3. MTJ as claimed in claim 1, wherein, described first barrier layer and described second
Barrier layer is formed by the material selected from following group: SixMgyOzAnd SixZnyOz, wherein
0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
4. MTJ as claimed in claim 1, wherein, described first barrier layer and described second
Barrier layer is each has the thickness in the range of 0.5-5nm.
5. MTJ as claimed in claim 1, also includes:
Second reference layer, is arranged on described second barrier layer, magnetic material formed and have fixing
The direction of magnetization.
6. MTJ as claimed in claim 5, wherein, the direction of magnetization of described second reference layer
It is parallel to the direction of magnetization of described first reference layer.
7. MTJ as claimed in claim 5, also includes:
3rd barrier layer, is arranged on described second reference layer, insulant is formed, and have class
Spinel crystal structure.
8. MTJ as claimed in claim 7, wherein, described 3rd barrier layer is by selected from following
The material of group is formed:
MgxAlyOz、ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4；
SixMgyOz、SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
9. a MTJ, including:
First reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；
First barrier layer, is arranged on described first reference layer and is formed by insulant；
Free layer, is arranged on described first barrier layer, magnetic conductive material is formed and its magnetization side
To freely changing in response to external magnetic field；And
Second barrier layer, is arranged on described free layer and is formed by insulant,
Wherein, described first barrier layer is mutual with the lattice paprmeter of described first reference layer and described free layer
Coupling, and
Wherein, described second barrier layer is mutually matched with the lattice paprmeter of described free layer.
10. a spintronics devices, including the magnetic as described in any one in claim 1-9
Property tunnel knot.
11. 1 kinds of spin diodes, including:
First reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；
First barrier layer, is arranged on described first reference layer and is formed by insulant；
Free layer, is arranged on described first barrier layer, magnetic conductive material is formed and its magnetization side
To freely changing in response to external magnetic field；
Second barrier layer, is arranged on described free layer and is formed by insulant；
First electrode, is functionally connected to described first reference layer；And
Second electrode, is functionally connected to described free layer,
Wherein, described first barrier layer and described second barrier layer are respectively provided with spinel-like crystal structure.
12. spin diode, wherein, described first barrier layer and described as claimed in claim 11
Two barrier layers are formed by the material selected from following group: MgxAlyOzAnd ZnxAlyOz, wherein
0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
13. spin diode, wherein, described first barrier layer and described as claimed in claim 11
Two barrier layers are formed by the material selected from following group: SixMgyOzAnd SixZnyOz, wherein
0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
14. spin diode as claimed in claim 11, also include:
Second reference layer, is arranged on described second barrier layer, magnetic material formed and have fixing
The direction of magnetization,
Wherein, the direction of magnetization of described second reference layer is parallel to the direction of magnetization of described first reference layer,
And
Wherein, described second electrode function is connected to described second reference layer.
15. spin diode as claimed in claim 14, also include:
3rd barrier layer, is arranged on described second reference layer, insulant is formed, and have class
Spinel crystal structure,
Wherein, described 3rd barrier layer is formed by the material selected from following group:
MgxAlyOz、ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4；
SixMgyOz、SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
16. 1 kinds of spin transistors, including:
First reference layer, is formed by magnetic conductive material and has the fixing direction of magnetization；
First barrier layer, is arranged on described first reference layer and is formed by insulant；
Free layer, is arranged on described first barrier layer, magnetic conductive material is formed and its magnetization side
To freely changing in response to external magnetic field；
Second barrier layer, is arranged on described free layer and is formed by insulant；
Second reference layer, is arranged on described second barrier layer, magnetic conductive material is formed, and have
There is the magnetization side of the fixing direction of magnetization, the direction of magnetization of described second reference layer and described first reference layer
The most parallel；
Emitter stage, is functionally connected to described first reference layer；
Base stage, is functionally connected to described free layer；And
Colelctor electrode, is functionally connected to described second reference layer,
Wherein, described first barrier layer and described second barrier layer are respectively provided with spinel-like crystal structure.
17. spin transistors as claimed in claim 16, wherein, described first barrier layer and described
Two barrier layers are formed by the material selected from following group: MgxAlyOzAnd ZnxAlyOz, wherein
0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4.
18. spin transistors as claimed in claim 16, wherein, described first barrier layer and described
Two barrier layers are formed by the material selected from following group: SixMgyOzAnd SixZnyOz, wherein
0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
19. spin transistors as claimed in claim 16, also include:
3rd barrier layer, is arranged on described second reference layer, insulant is formed, and have class
Spinel crystal structure.
20. spin transistors as claimed in claim 19, wherein, described 3rd barrier layer by selected from
The material of lower group is formed:
MgxAlyOz、ZnxAlyOz, wherein 0≤x/ (x+y+z) < 0.5,0 < y/ (x+y+z)≤0.4,
0.3≤z/ (x+y+z)≤0.6, and x:y:z ≠ 1:2:4；
SixMgyOz、SixZnyOz, wherein 0 < x/ (x+y+z) < 0.33,0 < y/ (x+y+z) < 0.5,
0.4 < z/ (x+y+z) < 0.66, and x:y:z ≠ 1:2:4.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111293212A (en) * | 2018-12-07 | 2020-06-16 | 中国科学院上海微系统与信息技术研究所 | Magnetic tunneling junction device based on tunneling isolation layer and manufacturing method thereof |
| WO2021016837A1 (en) * | 2019-07-30 | 2021-02-04 | 北京航空航天大学 | Magnetic tunnel junction, manufacturing method, spin diode, and memory |
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| CN102403449A (en) * | 2010-09-09 | 2012-04-04 | 索尼公司 | Memory element and memory |
| CN103531707A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | Magnetic tunnel junction |
| CN104009151A (en) * | 2014-05-27 | 2014-08-27 | 中国科学院物理研究所 | Closed magnetic tunnel junction |
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| CN102403449A (en) * | 2010-09-09 | 2012-04-04 | 索尼公司 | Memory element and memory |
| CN103531707A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | Magnetic tunnel junction |
| CN104009151A (en) * | 2014-05-27 | 2014-08-27 | 中国科学院物理研究所 | Closed magnetic tunnel junction |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111293212A (en) * | 2018-12-07 | 2020-06-16 | 中国科学院上海微系统与信息技术研究所 | Magnetic tunneling junction device based on tunneling isolation layer and manufacturing method thereof |
| CN111293212B (en) * | 2018-12-07 | 2021-11-16 | 中国科学院上海微系统与信息技术研究所 | Magnetic tunneling junction device based on tunneling isolation layer and manufacturing method thereof |
| WO2021016837A1 (en) * | 2019-07-30 | 2021-02-04 | 北京航空航天大学 | Magnetic tunnel junction, manufacturing method, spin diode, and memory |
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