CN115940827A - Low Noise Amplifier Circuit and Wireless Communication System - Google Patents
Low Noise Amplifier Circuit and Wireless Communication System Download PDFInfo
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- CN115940827A CN115940827A CN202211650881.2A CN202211650881A CN115940827A CN 115940827 A CN115940827 A CN 115940827A CN 202211650881 A CN202211650881 A CN 202211650881A CN 115940827 A CN115940827 A CN 115940827A
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- Y02D30/00—Reducing energy consumption in communication networks
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Abstract
The invention relates to a low-noise amplifier circuit and a wireless communication system, wherein the amplifier circuit comprises a radio frequency amplification module, the radio frequency amplification module comprises an input node, a radio frequency amplification transistor, a feedback circuit and an impedance transformation circuit, the impedance transformation circuit comprises at least one transmission line impedance transformer and an output node, a first grid electrode of the radio frequency amplification transistor is coupled with the input node, a drain electrode of the radio frequency amplification transistor is coupled with the transmission line impedance transformer, the transmission line impedance transformer is coupled to the output node, and the output node is coupled to the first grid electrode of the radio frequency amplification transistor through a feedback loop. The invention has the characteristics of high bandwidth, high gain and extremely low noise, and overcomes the technical defects that the existing amplifier can not simultaneously solve the noise coefficient, the working bandwidth and the gain.
Description
Technical Field
The present invention relates to the field of radio frequency communication technologies, and in particular, to a low noise amplifier circuit and a wireless communication system.
Background
The radio frequency low noise amplifier is widely applied to the field of wireless communication, and is used for amplifying the power of a modulation signal of transmission information loaded on a carrier signal or amplifying the power of a radio frequency signal received by an antenna to form a radio frequency signal with a certain bandwidth. Such as navigation communications and cell phone communications. The noise figure and the frequency bandwidth of the radio frequency low noise amplifier directly influence the signal integrity and the bit error rate of wireless communication.
A conventional radio frequency low noise amplifier, such as the low noise amplifier circuit proposed in US10608590B2, uses passive devices such as inductors and capacitors for input and output impedance matching design. However, passive elements such as inductors and capacitors and parasitic resistances thereof limit the noise figure and the operating bandwidth of the low noise amplifier, and simultaneously increase the area of the low noise amplifier. The main bandwidth increasing method is feedback technology, such as the low noise amplifier circuit proposed in patent CN109474243A, which feeds back the output signal of the low noise amplifier to the input terminal, increases the operating bandwidth, and improves the input/output impedance matching. However, the feedback loop may decrease the gain of the low noise amplifier, and may also shift the input impedance from the optimal noise impedance point, thereby increasing the noise figure of the low noise amplifier, and thus it is difficult to achieve a noise figure of less than 1 dB.
Therefore, it is desirable to provide a low noise amplifier circuit that can simultaneously achieve noise figure, operating bandwidth, and gain.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the technical defect that the prior art amplifier cannot simultaneously solve the noise factor, the working bandwidth and the gain.
To solve the above technical problem, the present invention provides a low noise amplifier circuit, including:
a radio frequency amplification module comprising an input node, a radio frequency amplification transistor, a feedback circuit, and an impedance transformation circuit, the impedance transformation circuit comprising at least one transmission line impedance transformer and an output node, a first gate of the radio frequency amplification transistor coupled with the input node, a drain of the radio frequency amplification transistor coupled with the transmission line impedance transformer, the transmission line impedance transformer coupled to the output node, the output node coupled to the first gate of the radio frequency amplification transistor through the feedback loop;
a bias module comprising a sampling transistor, a control circuit, and a bias node, a drain of the sampling transistor coupled to an input of the control circuit, an output of the control circuit coupled to a first gate of the sampling transistor, the first gate of the sampling transistor coupled to a first gate of the radio frequency amplification transistor through the bias node.
In one embodiment of the present invention, the feedback circuit includes at least one capacitor and/or resistor, and the at least one capacitor and/or resistor feeds back the drain rf signal of the rf amplifying transistor to the first gate of the rf amplifying transistor.
In one embodiment of the present invention, when the number of the impedance transformers is plural, the impedance transformers are connected in series and/or in parallel to form the impedance transformation circuit.
In one embodiment of the invention, a plurality of different transmission line impedance transformers are used for mutual switching for achieving band switching and/or impedance ratio switching.
In one embodiment of the present invention, the control circuit includes at least one FET and a resistor divider, a gate of the FET is coupled to the drain of the sampling transistor through the resistor divider, and a source of the FET is coupled to the first gate of the sampling transistor.
In one embodiment of the invention, the resistor divider comprises at least two resistors connected in series, and the voltage of at least two resistor coupling positions is the output voltage of the resistor divider, and the output voltage of the resistor divider is coupled to the gate of the FET.
In one embodiment of the invention, the radio frequency amplifying transistor and the sampling transistor are cascode transistors.
In one embodiment of the present invention, the first power supply input terminal is further included, and the second gate of the radio frequency amplifying transistor and the second gate of the sampling transistor are both coupled to the first power supply input terminal.
In an embodiment of the invention, further comprising a second power supply input, the drain of the sampling transistor being coupled to the second power supply input.
In addition, the present invention provides a wireless communication system, characterized in that: comprising a low noise amplifier circuit as described above.
Compared with the prior art, the technical scheme of the invention has the following advantages:
1. the low-noise amplifier circuit and the wireless communication system have the characteristics of high bandwidth, high gain and extremely low noise, and overcome the technical defects that the existing amplifier cannot simultaneously solve the noise coefficient, the working bandwidth and the gain;
2. according to the low-noise amplifier circuit and the wireless communication system, the current change of the radio frequency amplifying transistor is fed back to the first grid electrode of the radio frequency amplifying transistor through the sampling transistor, so that the quiescent current stability far superior to that of a traditional amplifier and a bias circuit is realized, the structure of the existing amplifier bias circuit is simplified, the circuit area is saved, the design difficulty is reduced, and the problems of the stability and the difference of the quiescent bias current can be solved at the same time.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference will now be made in detail to the present disclosure, examples of which are illustrated in the accompanying drawings.
Fig. 1 is a schematic circuit diagram of a low noise amplifier circuit according to an embodiment of the present invention.
Fig. 2 is a schematic circuit diagram of a low noise amplifier circuit according to a second embodiment of the present invention.
Fig. 3 is a schematic circuit diagram of a low noise amplifier circuit according to a second embodiment of the present invention.
FIG. 4 is a graph of S-scattering parameter distribution according to the present invention.
Fig. 5 is a noise figure distribution diagram according to the present invention.
Wherein the reference numerals are as follows: 1. a first FET tube; 2. a first resistor; 3. a second resistor; 4. a first capacitor; 5. a second FET tube; 6. a third resistor; 7. a second capacitor; 8. a fourth resistor; 9. a fifth resistor; 10. a sixth resistor; 11. a first power supply input terminal; 12. a second power supply input terminal; 13. a seventh resistor, 14, a second cascode transistor; 15. a third capacitor; 16. a first cascode transistor; 17. a first coupled transmission line impedance transformer; 18. a third power supply input terminal; 19. a fourth capacitor; 20. an input node; 21. an output node; 22. a first radio frequency switch; 23. a second radio frequency switch 24, a second coupled transmission line impedance transformer; 25. a third coupled transmission line impedance transformer; 26. a fourth coupled transmission line impedance transformer.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Example one
Referring to fig. 1, a low noise amplifier circuit with a structure according to an embodiment of the present invention includes a radio frequency amplification module, a bias module, a first power input terminal 11, and a second power input terminal 12, where the radio frequency amplification module includes an input node 20, a radio frequency amplification transistor, a feedback circuit, and an impedance transformation circuit, where the impedance transformation circuit includes at least one transmission line impedance transformer and an output node 21; the bias module comprises a sampling transistor, a control circuit and a bias node; the radio-frequency amplification transistor and the sampling transistor are cascode transistors which are realized by adopting double-gate FET tubes, four circuit ports of the cascode transistors are respectively a drain electrode, a source electrode, a first grid electrode and a second grid electrode, a cascode tube external interface of the cascode transistors comprises the source electrode and the first grid electrode, and a common-gate tube external interface comprises the drain electrode and the second grid electrode. To distinguish between the two cascode transistors, hereinafter the radio frequency amplifying transistor is referred to as the first cascode transistor 16 and the sampling transistor is referred to as the second cascode transistor 14, a first gate of the first cascode transistor 16 being coupled to the input node 20, a drain of the first cascode transistor 16 being coupled to the transmission line impedance transformer, the transmission line impedance transformer being coupled to the output node 21, the output node 21 being coupled to the first gate of the radio frequency amplifying transistor through the feedback loop; the drain of the second cascode transistor 14 is coupled to the input of the control circuit, the output of the control circuit is coupled to the first gate of the second cascode transistor 14, and the first gate of the second cascode transistor 14 is coupled to the first gate of the first cascode transistor 16 via the bias node.
The low-noise amplifier circuit has the characteristics of high bandwidth, high gain and extremely low noise, the working bandwidth exceeds 4 octaves, the gain exceeds 20dB in the working frequency band, the low-noise amplifier circuit has an extremely low noise coefficient, and the noise coefficient is less than 0.5dB in the working frequency band, so that the technical defect that the existing amplifier cannot simultaneously solve the noise coefficient, the working bandwidth and the gain is overcome.
The feedback circuit and the impedance transformation circuit are used in combination, and the broadband low-noise amplifier is realized by improving load impedance and negative feedback. Meanwhile, the combination of the feedback circuit and the impedance transformation circuit realizes the input matching and the output matching of the low-noise amplifier circuit, and the input standing wave ratio and the output standing wave ratio are smaller than 2. The dual gate FET is used to improve the gain of the low noise amplifier. The double-gate FET tube, the feedback circuit and the impedance transformation circuit are combined to realize high gain and low noise coefficient of the low noise amplifier, and the noise coefficient of the low noise amplifier reaches the minimum noise coefficient of the radio frequency amplifying transistor.
The impedance transformation circuit comprises a first coupled transmission line impedance transformer 17, a third power input terminal 18 and an output node 21, wherein three ports of the first coupled transmission line impedance transformer 17 are coupled with the drain of the first cascode transistor 16, the third power input terminal 18 and the output node 21 respectively. The first coupling transmission line impedance transformer 17 is composed of a first transmission line and a second transmission line which are coupled with each other, two ports of the first transmission line are respectively a coupling line first port and a coupling line second port, two ports of the second transmission line are respectively a coupling line third port and a coupling line fourth port, the coupling line first port and the coupling line third port are coupling ports, and the coupling line second port and the coupling line fourth port are coupling ports. The second port of the first coupled transmission line impedance transformer 17 is coupled to the third port thereof, the drain of said first cascode transistor 16 is coupled to the first port of the first coupled transmission line impedance transformer 17, the fourth port of the first coupled transmission line impedance transformer 17 is coupled to a third power supply input 18, the third power supply input 18 functions as an ac ground, and the second port of the first coupled transmission line impedance transformer 17 is coupled to the output node 21. The first coupling transmission line impedance transformer 17 transforms the load impedance to form a high load impedance, thereby realizing high gain and an operating bandwidth exceeding 4 octaves, and simultaneously increasing the load impedance can reduce the operating current. Wherein the first port of the first coupled transmission line impedance transformer 17 is a high impedance end and the second port of the first coupled transmission line impedance transformer 17 is a high impedance end, and the impedance transformation from 50 Ω to 200 Ω is realized by one coupled transmission line impedance transformer.
The working frequency band of the amplifier is determined by the impedance converter, and the working frequency band conversion of the low-noise amplifier is realized by switching the transmission line impedance converters of a plurality of different working frequency bands, namely, the working frequency band switching of the low-noise amplifier circuit is realized by switching the coupling transmission line impedance converters of different frequency bands, so that the Beidou frequency band, the GPS frequency band and other wireless communication frequency bands are compatible.
Further, the feedback circuit includes at least one capacitor and/or resistor, and the at least one capacitor and/or resistor feeds back the drain rf signal of the first cascode transistor 16 to the first gate of the first cascode transistor 16. The feedback circuit comprises a capacitor, a resistor and an inductor or the combination of the capacitor, the resistor and the inductor to form a feedback closed loop, so that the input impedance matching can be improved, and the inductance required by a source electrode can be reduced. As an example, the feedback circuit includes a third capacitor 15 and a sixth resistor 10, and the drain rf signal of the first cascode transistor 16 is fed back to the first gate thereof through the third capacitor 15 and the sixth resistor 10 to form negative feedback, so that the bandwidth is significantly increased, the input and output impedances are improved, an input inductor and a power supply series inductor are not required in the circuit, and the circuit area of the low noise amplifier is greatly reduced.
The radio frequency amplification module further comprises a second capacitor 7 and a fourth capacitor 19, a first gate of the first cascode transistor 16 is coupled to the input node 20 through the second capacitor 7, and a second port of the coupled transmission line impedance transformer 17 is coupled to the output node 21 through the fourth capacitor 19.
Other circuits in the low noise amplifier circuit constitute a bias module, a first gate of a cascode transistor of a second cascode transistor 14 of the bias module is coupled to a first gate of a first cascode transistor 16, a second gate of a cascode transistor of the second cascode transistor, a drain of the cascode transistor of the second cascode transistor 14, and a source of the cascode transistor are coupled to the first power input terminal 11, the second power input terminal 12, and the ground, respectively. When the drain current of the first cascode transistor 16 changes, the first gate of the first cascode transistor 16 is fed back to the first gate of the second cascode transistor 14, so that the current of the second cascode transistor 14 changes, that is, the bias module feeds back the current change to the first gate of the second cascode transistor 14 and the first gate of the first cascode transistor 16, thereby realizing the current control of the first cascode transistor 16 and stabilizing the low noise amplifier quiescent operating point current.
Specifically, the control circuit includes a first FET tube 1, a second FET tube 5, a first resistor 2, a second resistor 3, a first capacitor 4, a third resistor 6, a fourth resistor 8, a fifth resistor 9, and a seventh resistor 13, a gate of the first FET tube 1 is coupled to a drain of a second cascode transistor 14, a source of the first FET tube 1 is coupled to the gate of the second FET tube 5 through the first resistor 2, a gate of the second FET tube 5 is grounded through the second resistor 3, sources of the second FET tube 5 are grounded through the third resistor 6 and the first capacitor 4, respectively, a source of the second FET tube 5 is coupled to a first gate of a first cascode transistor 16 through the fifth resistor 9, a drain of the second cascode transistor 14 is coupled to a second power input terminal 12 through the seventh resistor 13, a first gate of the second cascode transistor 14 is coupled to a first gate of the first cascode transistor 16 through the fourth resistor 8, and a source of the second cascode transistor 14 is grounded. That is, when the drain current of the first cascode transistor 16 changes, the first gate of the first cascode transistor is fed back to the first gate of the second cascode transistor 14, so that the current of the second cascode transistor 14 changes, and is fed back to the first FET tube 1, and then the change is fed back to the first gate of the second cascode transistor 14 and the first gate of the first cascode transistor 16 through the second FET tube 5, so as to control the current of the first cascode transistor 16, thereby reducing the static current along with the process deviation and the temperature fluctuation, greatly reducing the difference of the static bias current among a plurality of amplifier products, and achieving the static current stability far superior to that of the conventional low noise amplifier.
Preferably, the second cascode transistor 14 and the first cascode transistor 16 have the same parameters except for different gate widths, the gate width of the second cascode transistor 14 is smaller than the gate width of the first cascode transistor 16, and the ratio of static currents of the second cascode transistor 14 and the first cascode transistor 16 is the same as the ratio of the gate widths of the second cascode transistor 14 and the first cascode transistor 16.
The low-noise amplifier circuit provided by the invention realizes the low-noise amplifier circuit without an input inductor, a power supply series inductor and an input-output matching circuit by applying a double-gate FET tube technology, a feedback technology, a broadband transmission line impedance matching technology and a sampling technology, simplifies the structure of the existing low-noise amplifier circuit, saves the circuit area, reduces the design difficulty, can simultaneously give consideration to the noise coefficient, the working bandwidth and the gain, solves the problems of stability and difference of static bias current, and is easy to popularize and use.
The low-noise amplifier circuit is insensitive to the source inductance of the first cascode transistor, and the source of the first cascode transistor is directly grounded or grounded through a minimum inductance, so that the area of the low-noise amplifier circuit is greatly reduced, and the cost is saved.
The advantageous effects of the present invention will be described in detail below by taking the structure shown in fig. 1 as an example.
Referring to fig. 1, the voltage of the third power input terminal 18 is set to 1.8V, the voltage of the first power input terminal 11 is set to 0.8V, and the voltage of the second power input terminal 12 is set to 2.5V. The first resistor 2 is set to 2000 Ω, the second resistor 3 is set to 5000 Ω, the third resistor 6 is set to 1000 Ω, the fourth resistor 8 is set to 10000 Ω, the fifth resistor 9 is set to 5000 Ω, the sixth resistor 10 is set to 2000 Ω, and the seventh resistor 13 is set to 700 Ω. Setting a first electric capacitor 4 as 3pF, a second electric capacitor 7 as 1000pF, a third electric capacitor 15 as 5pF and a fourth electric capacitor 19 as 1000pF, and setting a first FET tube 1, a second FET tube 5, a second cascode transistor 14 and a first cascode transistor 16 as stable 2503525 μm E-mode FET tubes; the gate width of the first FET tube 1 and the second FET tube 5 is 50 μm; the gate width of the second cascode transistor 14 is 60 μm; the gate width of the first cascode transistor 16 is 300 μm; the first coupled transmission line impedance transformer 17 is provided as a coupled two-wire impedance transformer having an even mode impedance of 500, an odd mode impedance of 50 and an electrical length of 18 degrees at a frequency of 1 GHz.
Referring to fig. 4 and 5, the input and output return loss of the low noise amplifier circuit provided by the invention is less than-10 dB, the gain is greater than 20dB, and the noise coefficient is less than 0.36dB in the frequency band of 600MHz to 4.7GHz exceeding 7 octaves.
Referring to table 1, the comparison result of the noise and the gain of the amplifier of the present invention and the amplifier of the prior art (US 10608590B 2) is compared with the case that the number of FET transistors of the amplifier of the present invention is one, wherein the relative bandwidth of the prior art 1 is 0.7, which is much smaller than 1.5 of the amplifier of the present invention, the gain of the prior art 1 is 14.46, which is smaller than 20dB of the gain of the amplifier of the present invention, and the noise figure of the prior art 1 is 0.67dB, which is larger than 0.36dB of the noise figure of the amplifier of the present invention. Referring to fig. 4, the same measurement frequency of 5-6 GHz as that of prior art 1 is selected, and the gain and noise factor of the low noise amplifier of the present invention are 16.6dB and 0.42dB, respectively, and the result is still better than that of prior art 1.
With continued reference to table 1, prior art 2 (CN 109474243A) proposes a low noise amplifier with a relative bandwidth of 2, which is 1.3 times that of the low noise amplifier of the present invention; but the noise figure of prior art 2 is greater than 2.5dB, which is much greater than the noise figure of the inventive low noise amplifier of 0.36dB and the noise figure of prior art 1 of 0.67dB; meanwhile, in order to increase the gain, the prior art 2 uses two FET transistors of the rf amplifier, which have a gain of 17.5dB, which is 20dB smaller than the gain of the low noise amplifier of the present invention.
TABLE 1
In addition, the invention does not need to adopt a matching inductance structure used in the circuits of the prior art 1 and the prior art 2, thereby greatly reducing the circuit area of the low-noise amplifier.
In summary, the low noise amplifier circuit structure provided by the invention is simpler and more concise than the existing low noise amplifier circuit, simultaneously, the noise performance is superior to the existing low noise amplifier circuit, and the low noise amplifier circuit structure can simultaneously give consideration to the noise coefficient, the working bandwidth and the gain, solve the problems of stability and difference of the static bias current, and is easy to popularize and use.
Example two
A second embodiment of the present invention provides a low noise amplifier circuit with another structure, which includes the components in the first embodiment, and the same components are denoted by the same reference numerals, and the details of this embodiment are not repeated herein. However, referring to fig. 2, the impedance transformation circuit in this embodiment includes a first coupled transmission line impedance transformer 17, a second coupled transmission line impedance transformer 24, a third power input terminal 18 and an output node 21, wherein a first port of the first coupled transmission line impedance transformer 17 and a second port of the second coupled transmission line impedance transformer 24 are respectively coupled to the drain of the first cascode transistor 16 and the output node 21, and the third power input terminal 18 is respectively coupled to a third port of the first coupled transmission line impedance transformer 17 and a third port of the second coupled transmission line impedance transformer 24. In this embodiment, two coupling transmission line impedance transformers are used in combination, the 50 Ω load impedance is transformed to 200 Ω impedance through the first coupling transmission line impedance transformer 17, and then the 200 Ω impedance is raised to 800 Ω impedance through the second coupling transmission line impedance transformer 24, so as to realize the whole 50 Ω -800 Ω load impedance transformation, that is, the invention can couple a plurality of coupling transmission line impedance transformers step by using the combination of the coupling transmission line impedance transformers, so as to realize higher impedance transformation ratio, further raise the load resistance of the radio frequency amplifying transistor, reduce the working current of the radio frequency amplifying transistor, and improve the circuit efficiency of the low noise amplifier.
Preferably, the plurality of impedance transformers, not limited to two coupled transmission lines, are combined together to realize a higher impedance transformation ratio, so as to increase the drain load impedance of the first cascode transistor 16, reduce the operating current of the first cascode transistor 16, and increase the efficiency of the low noise amplifier.
EXAMPLE III
A third embodiment of the present invention provides a low noise amplifier circuit with another structure, which includes the components in the first embodiment, and the same components are denoted by the same reference numerals, and the details of this embodiment are not repeated herein. However, referring to fig. 3, in the present embodiment, the impedance transforming circuit includes a first rf switch 22, a second rf switch 23, a first coupled transmission line impedance transformer 17, a third coupled transmission line impedance transformer 25, a fourth coupled transmission line impedance transformer 26, a third power input 18 and an output node 21, a drain of the first cascode transistor 16 is coupled to first ports of the first coupled transmission line impedance transformer 17, the third coupled transmission line impedance transformer 25 and the fourth coupled transmission line impedance transformer 26 through the first rf switch 22, the output node 21 is coupled to second ports of the first coupled transmission line impedance transformer 17, the third coupled transmission line impedance transformer 25 and the fourth coupled transmission line impedance transformer 26 through the second rf switch 23, and the third power input 18 is coupled to third ports of the first coupled transmission line impedance transformer 17, the third coupled transmission line impedance transformer 25 and the fourth coupled transmission line impedance transformer 26. The invention realizes the impedance change from 50 omega load impedance to 2400 omega by the combined use of three coupling transmission line impedance transformers, namely realizes higher impedance transformation ratio by a plurality of coupling transmission line impedance transformers.
Example four
A fourth embodiment of the present invention further provides a wireless communication system, which includes the low noise amplifier circuit according to the three embodiments, and the wireless communication system has all the advantages of the low noise amplifier circuit, which are not described in detail herein.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. A low noise amplifier circuit, characterized by: the method comprises the following steps:
a radio frequency amplification module comprising an input node, a radio frequency amplification transistor, a feedback circuit, and an impedance transformation circuit, the impedance transformation circuit comprising at least one transmission line impedance transformer and an output node, a first gate of the radio frequency amplification transistor coupled with the input node, a drain of the radio frequency amplification transistor coupled with the transmission line impedance transformer, the transmission line impedance transformer coupled to the output node, the output node coupled to the first gate of the radio frequency amplification transistor through the feedback loop;
a bias module comprising a sampling transistor, a control circuit, and a bias node, a drain of the sampling transistor coupled to an input of the control circuit, an output of the control circuit coupled to a first gate of the sampling transistor, the first gate of the sampling transistor coupled to a first gate of the radio frequency amplification transistor through the bias node.
2. A low noise amplifier circuit as defined in claim 1, wherein: the feedback circuit comprises at least one capacitor and/or resistor, and the at least one capacitor and/or resistor feeds back a drain radio frequency signal of the radio frequency amplification transistor to the first grid electrode of the radio frequency amplification transistor.
3. A low noise amplifier circuit according to claim 1 or 2, wherein: when the number of the impedance transformers is multiple, the impedance transformers are connected in series and/or in parallel to form the impedance transformation circuit.
4. A low noise amplifier circuit as defined in claim 3, wherein: a plurality of different transmission line impedance transformers are used for mutual switching for achieving band switching and/or impedance ratio switching.
5. A low noise amplifier circuit as defined in claim 1, wherein: the control circuit comprises at least one FET tube and a resistor voltage divider, wherein the grid electrode of the FET tube is coupled to the drain electrode of the sampling transistor through the resistor voltage divider, and the source electrode of the FET tube is coupled to the first grid electrode of the sampling transistor.
6. The amplifier biasing circuit of claim 5, wherein: the resistance voltage divider comprises at least two resistors connected in series, the voltage of the coupling position of the at least two resistors is the output voltage of the resistance voltage divider, and the output voltage of the resistance voltage divider is coupled to the grid electrode of the FET tube.
7. The amplifier biasing circuit of claim 1, wherein: the radio frequency amplifying transistor and the sampling transistor are cascode transistors.
8. The amplifier biasing circuit of claim 1, wherein: the second grid electrode of the radio frequency amplification transistor and the second grid electrode of the sampling transistor are both coupled to the first power supply input end.
9. The amplifier biasing circuit of claim 4, wherein: a second power supply input is also included, the drain of the sampling transistor being coupled to the second power supply input.
10. A wireless communication system, characterized by: comprising a low noise amplifier circuit as claimed in any of the claims 1-9.
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