CN115939177A - Silicon carbide power device and switch element - Google Patents
Silicon carbide power device and switch element Download PDFInfo
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- CN115939177A CN115939177A CN202310224791.5A CN202310224791A CN115939177A CN 115939177 A CN115939177 A CN 115939177A CN 202310224791 A CN202310224791 A CN 202310224791A CN 115939177 A CN115939177 A CN 115939177A
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a silicon carbide power device and a switching element. The silicon carbide power device at least comprises a unit cell, wherein the unit cell comprises a substrate, and the substrate comprises a first surface and a second surface which are oppositely arranged; the epitaxial layer is positioned on the first surface of the substrate and comprises a drift region, body regions positioned on two sides of the unit cell and in the surface of the drift region, a source region positioned in the surface of the body region and a junction field effect transistor region arranged around the body region; the Schottky region is positioned between the adjacent unit cells and comprises a Schottky metal layer positioned on one side, far away from the substrate, of the epitaxial layer, and the Schottky metal layer and the drift region form Schottky contact; the epitaxial layer further includes an insulating layer including a first insulating section at least partially covering a bottom surface of the body region on a side thereof adjacent to the substrate. The insulating layer is arranged in the silicon carbide power device, so that the voltage drop at two ends of the PN diode can be effectively reduced, and the current capability of the Schottky diode is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a silicon carbide power device and a switching element.
Background
Silicon carbide (SiC) is a novel wide bandgap semiconductor material, has excellent physical, chemical and electrical properties, has wide bandgap width, high breakdown electric field, high thermal conductivity, high electronic saturation rate and higher radiation resistance, and has great attraction and application prospect in high-power and high-temperature application environments.
In addition to the MOS structure, a conventional silicon carbide MOSFET has an internal PN diode parasitic in its cell structure. In order to inhibit the turn-on of a PN diode in a silicon carbide MOSFET, a Schottky diode (SBD) and the MOSFET are used in an anti-parallel mode to serve as a freewheeling diode of the MOSFET; however, due to the voltage drop across the PN diode, the current capability of the schottky diode is limited, which in turn affects the overall performance of the silicon carbide MOSFET.
Disclosure of Invention
The invention provides a silicon carbide power device and a switch element, which can effectively reduce the voltage drop at two ends of a PN diode and improve the current capability of a Schottky diode.
According to an aspect of the present invention, there is provided a silicon carbide power device comprising at least one cell, characterized in that,
the unit cell comprises a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged;
the epitaxial layer is positioned on the first surface of the substrate and comprises a drift region, body regions positioned on two sides of the unit cell and in the surface of the drift region, source regions positioned in the surface of the body regions and junction field effect transistor regions arranged around the body regions;
the silicon carbide power device further comprises a Schottky region, the Schottky region is positioned between adjacent cells, the Schottky region comprises a Schottky metal layer positioned on one side of the epitaxial layer far away from the substrate, and the Schottky metal layer and the drift region form Schottky contact;
the epitaxial layer further comprises an insulating layer, wherein the insulating layer comprises a first insulating subsection, and the first insulating subsection at least partially covers the bottom surface of one side, close to the substrate, of the body region.
Optionally, the body region includes a first sidewall away from the junction field effect transistor region, and the insulating layer includes a second insulating portion at least partially covering the first sidewall.
Optionally, the first insulating sub-section comprises a plurality of first insulating sub-sections, and the first insulating sub-sections are arranged at intervals adjacent to the first insulating sub-sections;
and/or the second insulation subsection comprises a plurality of second insulator subsections, and the second insulator subsections are arranged adjacent to each other at intervals.
Optionally, the first insulating subsection and the second insulating subsection are of a one-piece construction.
Optionally, the schottky metal layer and the second insulating subsection at least partially overlap in a thickness direction of the silicon carbide power device.
Optionally, the schottky metal layer is at least partially in contact with the second insulating section.
Optionally, the constituent material of the insulating layer includes at least one of silicon dioxide, silicon nitride, and aluminum oxide.
Optionally, the silicon carbide power device further comprises a drain electrode covering the second surface of the substrate.
Optionally, the silicon carbide power device further includes a gate dielectric layer and a gate electrode, the gate dielectric layer is located on the surface of the epitaxial layer on the side far from the substrate, and the gate electrode is located on the surface of the gate dielectric layer on the side far from the substrate;
the gate dielectric layer covers the body region, the source region and the junction field effect transistor region.
According to another aspect of the present invention there is provided a switching device comprising a silicon carbide power device as described in any one of the above embodiments.
According to the technical scheme, the insulating layer is arranged in the epitaxial layer of the silicon carbide power device and comprises the first insulating part, and the first insulating part at least partially covers the bottom surface of the body region close to one side of the substrate. Simultaneously be provided with the schottky region in the carborundum power device, be located the schottky metal layer that the substrate one side was kept away from to the epitaxial layer in the schottky region, schottky metal layer and drift region form the schottky contact, and then form the schottky diode, utilize the conduction path of parasitic PN diode among the insulating layer separation carborundum power device for the current capacity who guarantees the schottky diode, make under normal operating condition, can effectively reduce the pressure drop at PN diode both ends, the conduction path of partial separation PN diode simultaneously, improve the current capacity of schottky diode, guarantee the wholeness ability of carborundum power device.
It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a silicon carbide power device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another silicon carbide power device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another silicon carbide power device provided by an embodiment of the invention;
fig. 4 is a schematic structural diagram of another silicon carbide power device provided by an embodiment of the invention;
fig. 5 is a schematic structural diagram of another silicon carbide power device provided by an embodiment of the invention;
fig. 6 is a schematic structural diagram of another silicon carbide power device according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in other sequences than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic structural diagram of a silicon carbide power device according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of another silicon carbide power device according to an embodiment of the present invention, as shown in fig. 1 and fig. 2, a silicon carbide power device 100 includes at least one cell 101, the cell 101 includes a substrate 102, and the substrate 102 includes a first surface 1021 and a second surface 1022 that are oppositely disposed; an epitaxial layer 103, wherein the epitaxial layer 103 is located on the first surface 1021 of the substrate 102, the epitaxial layer 103 comprises a drift region 104, a body region 105 located on two sides of the unit cell 101 and in the surface of the drift region 104, a source region 106 located in the surface of the body region 105, and a junction field effect transistor region 107 arranged around the body region 105; the silicon carbide power device 100 further comprises schottky regions 108, the schottky regions 108 being located between adjacent cells 101, the schottky regions 108 comprising a schottky metal layer 109 located on a side of the epitaxial layer 103 remote from the substrate 102, the schottky metal layer 109 forming a schottky contact with the drift region 104; the epitaxial layer 103 further comprises an insulating layer 110, the insulating layer 110 comprising a first insulating subsection 111, the first insulating subsection 111 at least partially covering a bottom surface 1051 of the body region 105 at a side close to the substrate 102.
The silicon carbide power device 100 at least comprises one cell 101, for example, the silicon carbide power device 100 shown in fig. 1 includes two cells 101 as an example, the silicon carbide power device 100 includes a substrate 102 and an epitaxial layer 103, the substrate 102 includes a first surface 1021 and a second surface 1022 which are oppositely disposed, the epitaxial layer 103 is located on the first surface 1021 of the substrate 102, the epitaxial layer 103 includes a drift region 104, body regions 105 located on both sides of the cells 101 and in the surface of the drift region 104, source regions 106 located in the surfaces of the body regions 105, and junction field effect transistor regions 107 disposed around the body regions 105; an exemplary substrate 102 may be a silicon carbide substrate 102 of a first conductivity type semiconductor, the drift region 104 may be a drift region 104 of the first conductivity type semiconductor, the body region 105 may be a body region 105 of a second conductivity type semiconductor, and the source region 106 is a source region 106 of the first conductivity type semiconductor, when the first conductivity type semiconductor is an N-shaped semiconductor and the second conductivity type semiconductor is a P-shaped semiconductor. The junction field effect transistor region 107 surrounding the body region 105 is a part of the epitaxial layer 103 or is formed by ion implantation of the epitaxial layer 103. Since a reverse parasitic PN diode is generally present in the silicon carbide power device 100 of the prior art, the turn-on of the parasitic PN diode is liable to cause bipolar degradation of the silicon carbide power device 100, which affects the reliability of the device, and a schottky diode is generally connected in reverse in parallel in the silicon carbide power device 100 to prevent the turn-on of the parasitic PN diode, the silicon carbide power device 100 further includes a schottky region 108, the schottky region 108 is located between adjacent cells 101, the schottky region 108 includes a schottky metal layer 109 located on a side of the epitaxial layer 103 away from the substrate 102, the schottky metal layer 109 forms a schottky contact with the drift region 104, which forms a schottky diode, which is connected in parallel with the parasitic PN diode, the current capacity of the schottky diode depends on the total area of the schottky contact and the voltage drop across the parasitic PN diode connected in parallel, and when the voltage drop of the schottky diode current in the path in parallel with the parasitic PN diode is greater than the turn-on voltage across the parasitic PN diode, which is influenced mainly by the junction field effect transistor region 107, the drift region 104 and the resistance of the drift region 105. However, to increase the current capability of the schottky diode, it is necessary to increase the schottky area, the width or doping concentration of the jfet region 107, and the doping concentrations of the drift region 104 and the body region 105. However, increasing the schottky area requires sacrificing the area of the silicon carbide power device 100, and increasing the on-resistance of the silicon carbide power device 100; increasing the doping concentration or width of the jfet region 107 and increasing the doping concentration of the drift region 104 and the body region 105 is limited by the field strength and breakdown voltage, and the voltage drop across the parasitic PN diode cannot be reduced too low. In order to effectively reduce the voltage drop at two ends of the parasitic PN diode, the insulating layer 110 is arranged in the epitaxial layer 103, the insulating layer 110 can play a certain blocking role and can effectively block a conduction path of the parasitic PN diode, the insulating layer can be set into a single layer or multiple layers, and is specifically selected according to actual design requirements, meanwhile, the constituent material of the insulating layer can be any material or multiple materials which can be applied to a silicon carbide power device, and is specifically selected according to the actual design requirements, and the embodiment of the invention is not specifically limited. Illustratively, as shown in fig. 1, the insulating layer 110 includes a first insulating subsection 111, the first insulating subsection 111 completely covers a bottom surface 1051 of the body region 105 on a side close to the substrate 102 to block a conduction path of a parasitic PN diode on the bottom surface 1051, or as shown in fig. 2, the insulating layer 110 includes a plurality of first insulating subsections 111 arranged at intervals, the first insulating subsection 111 partially covers the bottom surface 1051 of the body region 105 on a side close to the substrate 102, so that only a part of the parasitic PN diode exists on the bottom surface 1051, so that the conduction of the parasitic PN diode can play a role in resisting surge current when the silicon carbide power device 100 generates large current or surge current. Meanwhile, the insulating layer 110 can effectively reduce the voltage drop at two ends of the parasitic PN diode, and obstruct the conduction path of the Schottky diode and the parasitic PN diode, so that the current capability of the Schottky diode is improved, the performance of the silicon carbide power device 100 is ensured, and the area and the preparation cost of the silicon carbide power device 100 can be saved.
Alternatively, fig. 3 is a schematic structural diagram of another sic power device provided in the embodiment of the present invention, and fig. 4 is a schematic structural diagram of another sic power device provided in the embodiment of the present invention, as shown in fig. 3 and fig. 4, the body region 105 includes a first sidewall 1052 far from the jfet region 107, the insulating layer 110 includes a second insulating subsection 112, and the second insulating subsection 112 at least partially covers the first sidewall 1052.
Wherein, exemplarily, the second insulating subsection 112 is covered on the first sidewall 1052 of the body region 105 far from the junction field effect transistor region 107, as shown in fig. 3, the second insulating subsection 112 may completely cover the first sidewall 1052, or as shown in fig. 4, the insulating layer 110 includes a plurality of second insulating subsections 112 arranged at intervals, the second insulating subsection 112 partially covers the first sidewall 1052, and at the same time, the conduction path of the parasitic PN diode generated on the bottom and the first sidewall 1052 can be effectively reduced, and the performance of the silicon carbide power device 100 can be further ensured.
Alternatively, fig. 5 is a schematic structural diagram of another sic power device according to an embodiment of the present invention, and as shown in fig. 5, the first insulation subsection 111 includes a plurality of first insulation subsections 1111, and the adjacent first insulation subsections 1111 are disposed at intervals; and/or the second insulation portion 112 includes a plurality of second insulator portions 1121, and adjacent second insulator portions 1121 are spaced apart.
Illustratively, as shown in fig. 4, the first insulation subsection 111 includes a plurality of first insulation subsections 1111, adjacent first insulation subsections 1111 are spaced apart from each other at the bottom surface 1051, the second insulation subsection 112 includes a plurality of second insulation subsections 1121, adjacent second insulation subsections 1121 are spaced apart from each other at the first side wall 1052; as shown in fig. 3, the first insulation portion 111 includes a plurality of first insulation subsections 1111, adjacent first insulation subsections 1111 are disposed at intervals on the bottom surface 1051, the second insulation subsections 112 include a second insulation subsection 1121, and the second insulation subsection 1121 is disposed at the first side wall 1052 in a whole layer; as shown in fig. 5, the first insulation subsection 111 includes a first insulation subsection 1111, the first insulation subsection 1111 is disposed on the bottom surface 1051 in a full layer, the second insulation subsection 112 includes a plurality of second insulation subsections 1121, the second insulation subsections 1121 are disposed at intervals on the first side wall 1052; the current path of the Schottky diode and the current path of the PN junction diode can be effectively isolated, the voltage drop at two ends of the parasitic PN diode is reduced, the conduction path of the PN is blocked, and therefore the current capacity of the Schottky diode is improved.
Alternatively, fig. 6 is a schematic structural diagram of another silicon carbide power device according to an embodiment of the present invention, and as shown in fig. 6, the first insulating subsection 111 and the second insulating subsection 112 are an integral structure. The bottom of the body region 105 and the first sidewall 1052 completely cover the insulating layer 110, so that the first insulating subsection 111 and the second insulating subsection 112 are connected, the voltage drop across the parasitic PN diode can be further reduced, the conduction path of the parasitic PN diode can be completely blocked, the performance of the silicon carbide power device 100 can be ensured, and the difficulty in manufacturing the insulating layer 110 can be reduced.
Optionally, with continued reference to fig. 3, 4 and 5, there is at least partial overlap of the schottky metal layer 109 with the second insulating subsection 112 along the thickness direction of the silicon carbide power device 100.
The schottky metal layer 109 may include metal materials such as titanium, nickel, molybdenum, gold, and platinum, and the specific material may be selected according to actual design requirements, which is not specifically limited in the embodiments of the present invention. Schottky contact exists between the schottky metal layer 109 and the drift region 104 in the epitaxial layer 103 to form a schottky diode, and the schottky metal layer 109 extends into the body regions 105 in the adjacent unit cells 101 respectively, so that the contact area between the schottky metal layer 109 and the drift region 104 is ensured, the conduction effect of the schottky diode is further ensured, and the turn-off speed of the device is increased. When the body region 105 is covered with the second insulating layer 110 portion away from the first sidewall 1052 of the jfet region 107, since at least a portion of the schottky metal layer 109 extends into the body region 105 of the adjacent cell 101, there is at least a partial overlap between the schottky metal layer 109 and the second insulating portion 112 along the thickness direction of the sic power device 100, and the schottky metal layer 109 may or may not contact the second insulating portion 112, which may be selected according to the actual coverage of the second insulating portion 112.
Optionally, with continued reference to fig. 3 and 6, there is at least partial contact of the schottky metal layer 109 with the second insulating subsection 112.
When the second insulating layer 110 partially completely covers the body region 105 away from the first sidewall 1052 of the jfet region 107, a portion of the schottky metal layer 109 makes schottky contact with the drift region 104, and a portion of the schottky metal layer 109 extends to the body region 105, and the second insulating segment 112 on the first sidewall 1052 makes contact with the schottky metal layer 109, so as to isolate the parallel path between the schottky diode and the parasitic PN diode, and simultaneously block the conduction path of the parasitic PN diode on the first sidewall 1052, thereby ensuring the current capability of the schottky diode and further ensuring the performance of the sic power device 100.
Alternatively, with continued reference to fig. 1, the constituent material of the insulating layer 110 may illustratively comprise silicon dioxide, silicon nitride, or aluminum oxide. The composition material of the insulating layer 110 may also be other insulating materials applied in a silicon carbide power device, and the specific composition material of the insulating layer 110 may be selected according to actual design requirements, which is not specifically limited in the embodiment of the present invention. The insulating layer 110 plays a certain role in blocking, so that a conduction path of the parasitic PN diode can be effectively blocked, and the influence of the conduction of the parasitic PN diode on the normal use effect of the silicon carbide power device 100 in the normal working process is avoided. Optionally, with continued reference to fig. 1, the silicon carbide power device 100 further includes a drain electrode 113, the drain electrode 113 overlying the second surface 1022 of the substrate 102. The drain 113 may be made of metal such as copper, aluminum, nickel, titanium, and the like, and the specific type may be selected according to actual requirements.
Optionally, with continued reference to fig. 1, the silicon carbide power device 100 further includes a gate dielectric layer 114 and a gate electrode 115, where the gate dielectric layer 114 is located on a surface of the epitaxial layer 103 on a side away from the substrate 102, and the gate electrode 115 is located on a surface of the gate dielectric layer 114 on a side away from the substrate 102; the gate dielectric layer 114 covers a portion of the body region 105, a portion of the source region 106, and the jfet region 107.
The gate 115 is located on a side of the gate dielectric layer 114 away from the substrate 102, a width of the gate 115 may be smaller than or equal to a width of the gate dielectric layer, and the gate 115 may be N-type or P-type doped polysilicon, or may be metal such as nickel, tungsten, or may be a compound such as titanium nitride. In the exemplary diagram, the width of the gate electrode 115 is the same as the width of the gate dielectric layer 114, which may be specifically selected according to actual design requirements.
The embodiment of the present invention further provides a switching device, which includes any of the silicon carbide power devices described in the above technical solutions, and therefore, the switching device has the beneficial effects of the silicon carbide power device, which are not described herein again.
The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A silicon carbide power device comprising at least one cell, characterized in that,
the unit cell comprises a substrate, wherein the substrate comprises a first surface and a second surface which are oppositely arranged;
the epitaxial layer is positioned on the first surface of the substrate and comprises a drift region, body regions positioned on two sides of the unit cell and in the surface of the drift region, a source region positioned in the surface of the body region and a junction field effect transistor region arranged around the body region;
the silicon carbide power device further comprises a Schottky region, the Schottky region is positioned between the adjacent unit cells, the Schottky region comprises a Schottky metal layer positioned on one side of the epitaxial layer far away from the substrate, and the Schottky metal layer and the drift region form Schottky contact;
the epitaxial layer further comprises an insulating layer comprising a first insulating subsection at least partially covering a bottom surface of the body region on a side close to the substrate.
2. The silicon carbide power device of claim 1, wherein the body region comprises a first sidewall distal from the junction field effect transistor region, and wherein the insulating layer comprises a second insulating segment at least partially covering the first sidewall.
3. The silicon carbide power device of claim 2, wherein the first insulating segment comprises a plurality of first insulating subsections spaced adjacent the first insulating subsections;
and/or the second insulation subsection comprises a plurality of second insulator subsections, and the second insulator subsections are arranged adjacent to each other at intervals.
4. The silicon carbide power device of claim 2, wherein the first and second insulating sections are a unitary structure.
5. The silicon carbide power device of claim 2, wherein the schottky metal layer at least partially overlaps the second insulating segment in a thickness direction of the silicon carbide power device.
6. The silicon carbide power device of claim 5, wherein the Schottky metal layer is in at least partial contact with the second insulating segment.
7. The silicon carbide power device of claim 1, wherein the insulating layer comprises a constituent material comprising at least one of silicon dioxide, silicon nitride, and aluminum oxide.
8. The silicon carbide power device of claim 1, further comprising a drain overlying the second surface of the substrate.
9. The silicon carbide power device of claim 1, further comprising a gate dielectric layer on a surface of the epitaxial layer on a side away from the substrate, and a gate electrode on a surface of the gate dielectric layer on a side away from the substrate;
the gate dielectric layer covers the body region, the source region and the junction field effect transistor region.
10. A switching device comprising the silicon carbide power device of any one of claims 1-9.
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| CN102201439A (en) * | 2011-05-10 | 2011-09-28 | 电子科技大学 | Trench-type insulated gate bipolar transistor (Trench IGBT) with enhanced internal conductivity modulation |
| US20160005883A1 (en) * | 2014-07-02 | 2016-01-07 | Hestia Power Inc. | Silicon carbide semiconductor device |
| CN111640790A (en) * | 2019-03-01 | 2020-09-08 | 株式会社东芝 | Semiconductor device with a plurality of semiconductor chips |
| CN112786680A (en) * | 2019-11-08 | 2021-05-11 | 株洲中车时代电气股份有限公司 | Cell structure of silicon carbide MOSFET device and power semiconductor device |
| CN113035955A (en) * | 2021-02-25 | 2021-06-25 | 厦门市三安集成电路有限公司 | Silicon carbide MOSFET device integrated with Schottky diode and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201439A (en) * | 2011-05-10 | 2011-09-28 | 电子科技大学 | Trench-type insulated gate bipolar transistor (Trench IGBT) with enhanced internal conductivity modulation |
| US20160005883A1 (en) * | 2014-07-02 | 2016-01-07 | Hestia Power Inc. | Silicon carbide semiconductor device |
| CN111640790A (en) * | 2019-03-01 | 2020-09-08 | 株式会社东芝 | Semiconductor device with a plurality of semiconductor chips |
| CN112786680A (en) * | 2019-11-08 | 2021-05-11 | 株洲中车时代电气股份有限公司 | Cell structure of silicon carbide MOSFET device and power semiconductor device |
| CN113035955A (en) * | 2021-02-25 | 2021-06-25 | 厦门市三安集成电路有限公司 | Silicon carbide MOSFET device integrated with Schottky diode and preparation method thereof |
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