CN115932525A - Dynamic parameter and reliability test system and test method for power device - Google Patents
Dynamic parameter and reliability test system and test method for power device Download PDFInfo
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- CN115932525A CN115932525A CN202211603504.3A CN202211603504A CN115932525A CN 115932525 A CN115932525 A CN 115932525A CN 202211603504 A CN202211603504 A CN 202211603504A CN 115932525 A CN115932525 A CN 115932525A
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Abstract
The invention discloses a power device dynamic parameter and reliability test system and a test method, wherein the system can flexibly simulate the working process under an inductive load and is used for testing the dynamic parameter and reliability of an IGBT module in a circuit with the load as the inductive load; the inductive load module is connected with the IGBT module in series to form a loop when the first switch or the second switch is switched on, the driving module is used for generating a pulse signal to be loaded on the IGBT module to control the on-off of the IGBT module, and the control module is used for generating a control signal to control the working states of the first switch, the second switch and the driving module; the current acquisition module is used for sensing the current of the IGBT module in a test state, and the dynamic performance and static performance test of the IGBT is realized.
Description
Technical Field
The invention relates to a system and a method for testing dynamic parameters and reliability of a power device.
Background
With the high-speed development of science, technology and economy of China, more and more attention is paid to sustainable development, and the development cannot be at the cost of damaging the environment; the state has gone out of a series of sustainable development strategies, reduces the dependence on fossil energy, and vigorously develops clean energy for converting solar energy and wind energy into electric energy. With the rapid development of the fields of photovoltaic inversion, energy storage, new energy vehicles, high-speed rails and the like, a brand-new device IGBT (insulated gate bipolar transistor) module enters the visual field of people, and the application of the IGBT module can be seen in the fields; with the wider application of the IGBT, the domestic IGBT industry develops rapidly; these fields have extremely high requirements on the performance and reliability of IGBTs.
Taking a new energy automobile system as an example, the IGBT module is applied to a power system (electric drive system) of an automobile, the electric drive system comprises a motor and an inverter, and the IGBT module is applied to the inverter; the inverter has two functions, namely, the inverter supplies power to the automobile in the running process of the automobile and recovers electric energy in the braking process of the automobile;
the inverter has the practical function of processing electricity, the load is inductive load, and the performance of the IGBT needs to be tested for ensuring the performance and reliability of the IGBT in the inductive load.
Disclosure of Invention
The invention aims to provide a power device dynamic parameter and reliability testing system which can accurately test the performance of an IGBT module in an inductive load circuit to a certain extent.
Therefore, the dynamic parameter and reliability testing system for the power device can flexibly simulate the working process under the inductive load and is used for testing the dynamic parameter and reliability of the IGBT module in the circuit with the inductive load as the load; the inductive load module is connected with the IGBT module in series to form a loop when the first switch or the second switch is switched on, the driving module is used for generating a pulse signal to be loaded on the IGBT module to control the on-off of the IGBT module, and the control module is used for generating a control signal to control the working states of the first switch, the second switch and the driving module; the current acquisition module is used for sensing the current of the IGBT module in a test state, and the oscilloscope is used for displaying the parameters of the IGBT module in the test state and testing the dynamic parameters and the reliability.
The second purpose of the invention provides a method for testing dynamic parameters and reliability of an IGBT, which is carried out by utilizing the testing system provided by the invention and comprises the following steps:
1) One end of the inductive load module is connected with the output end of the IGBT module, the other end of the inductive load module is divided into two paths, one path is connected with a power supply + HP through the first switch, and the other path is connected with the source electrode of the IGBT module through the second switch; the drain electrode and the source electrode of the IGBT module are respectively connected with a high power supply and a low power supply;
2) The driving module is connected with a gate pole of the IGBT module;
3) The control module is respectively connected with the driving module, the first switch and the second switch;
4) A source electrode of the input IGBT module of the oscilloscope;
the IGBT module is applied to the inverter;
after the construction is finished, carrying out dynamic parameter test and reliability test, wherein the dynamic parameter test comprises the following operations:
the control module controls the first switch to be closed and the second switch to be opened, and enables the driving module to perform the following control:
1) Controlling the IGBT of the upper bridge to be in a closed state;
2) Generating a pulse signal to act on a gate pole of the IGBT of the lower bridge so as to test the diode characteristic of the IGBT of the upper bridge and the over-current capability of the IGBT of the lower bridge;
the control module controls the first switch to be switched off and the second switch to be switched on, and enables the driving module to perform the following control:
1) Controlling the IGBT of the lower bridge to be in a closed state;
2) Generating a pulse signal to act on a gate pole of the IGBT of the upper bridge so as to test the diode characteristic of the IGBT of the lower bridge and the over-current capability of the IGBT of the upper bridge;
the oscilloscope is used for displaying dynamic parameters in the test process, analyzing the dynamic parameters, and calculating other dynamic parameters according to the displayed dynamic parameters to realize the dynamic parameter test of the IGBT module;
and the reliability test respectively loads pulse signals to the gate poles of the IGBT modules through the driving modules so as to age the IGBT, and the oscilloscope displays the parameter conditions in the aging process.
The system provided by the invention is configured with the inductive load, so that the simulation of the applied inductive load circuit of the IGBT is realized, and the on-off control of the IGBT can be realized by matching with the functional modules such as the driving module, the control module and the like, and the dynamic performance and the static performance test of the IGBT are carried out; dynamic and static parameters of the IGBT can be intuitively analyzed through the oscilloscope, and performance analysis is facilitated.
When the system provided by the invention is used for carrying out performance test on the IGBT, the IGBT loss is no work, the whole system does no work, the power consumption is less, and the system is more energy-saving and environment-friendly.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic block diagram of a system provided by the present invention;
FIG. 2 is a test schematic diagram of the system and the IGBT module under test set up provided by the invention;
FIG. 3 is a schematic circuit diagram of a driving module according to the present invention;
FIG. 4 is a schematic circuit diagram of the positive and negative voltage isolated power supply module according to the present invention;
fig. 5 is a low voltage power module according to the present invention.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.
The motor control system in the new energy automobile system comprises a power supply, an electric control main control system, an inverter system and a load system; in a motor control system, a power supply part can only provide active power and cannot provide reactive power, so that a direct-current power supply cannot directly drive a motor load and must be inverted into three-phase power through a main control system and an inversion system to drive a motor; in the electric control system, only the motor does work; IGBT losses are no work. The IGBT module is applied to a power system (electric drive system) of an automobile, the electric drive system comprises a motor and an inverter, and the IGBT module is applied to the inverter; the inverter has two functions, namely, the inverter supplies power to the automobile in the running process of the automobile and recovers electric energy in the braking process of the automobile. In order to ensure that the IGBT has stable dynamic performance and dynamic performance after the IGBT is applied to construct an inverter, the performance of the IGBT needs to be tested, the IGBT module test in the current market is an application double-pulse test system, the reliability is the reliability of the IGBT module tested by an application system in practice, and the prior scheme has the following problems:
1. the test flow is multiple, and the time consumption is long and the efficiency is not high;
2. the performance parameters in the bridge circuit cannot be well evaluated by the double-pulse test system;
3. in the practical application system, the test needs to do work, energy is not saved, the environment is protected, and the service life of a test device is possibly influenced
The performance of the power device can be divided into static and dynamic new energy; the static performance parameters can be tested by a static testing machine, or the IGBT is aged by the system, and each parameter in the aging process is displayed so as to analyze the static performance of the IGBT; the dynamic performance can be tested according to the double pulse test principle.
Referring to fig. 1, the system of the present disclosure includes a low voltage power module, a control module, a driving module, a positive and negative voltage isolation power module, a driving module, a high voltage power module, a current collection module and an oscilloscope. The inductive load module is connected with the IGBT module in series to form a loop when the first switch or the second switch is switched on, the driving module is used for generating a pulse signal to be loaded on the IGBT module to control the on-off of the IGBT module, and the control module is used for generating a control signal to control the working states of the first switch, the second switch and the driving module; the current acquisition module is used for sensing the current of the IGBT module in the test state, and the oscilloscope is used for displaying the lower parameters of the IGBT module in the test state and testing the dynamic parameters and reliability.
The system is used for performance testing of IGBT modules, and the IGBT modules are used for constructing functional circuits, such as three-phase circuits (inverter circuits). When the system is used for testing dynamic parameters and reliability of the IGBT applied to the three-phase circuit, please refer to FIG. 2 to build the following:
1) The inductive load module comprises a first inductor L1, a second inductor L2 and a third inductor L3, one end of the first inductor L1, one end of the second inductor L2 and one end of the third inductor L3 are respectively connected with the three-phase output end of the IGBT of the three-phase circuit, the other end of the first inductor L1, the other end of the second inductor L2 and the other end of the third inductor L3 are divided into two paths, one path is connected with the upper bridge IGBT drain electrode through a first switch, and the other path is connected with the lower bridge IGBT source electrode through a second switch; the drain electrode and the source electrode of the IGBT are respectively connected with a high power supply and a low power supply;
2) The driving module is connected with a gate pole of the IGBT;
3) The control module is respectively connected with the driving module, the first switch and the second switch;
4) And the input of the oscilloscope is connected with the lower bridge IGBT source electrode to complete the test construction.
After the construction is finished, carrying out dynamic parameter test and reliability test, wherein the dynamic parameter test comprises the following operations:
1) The control module controls the first switch to be closed and the second switch to be opened, and enables the driving module to perform the following control: and controlling the IGBT of the upper bridge to be in a closed state, and generating a pulse signal to act on a gate pole of the IGBT of the lower bridge so as to test the diode characteristic of the IGBT of the upper bridge and the overcurrent capacity of the IGBT of the lower bridge. In the closing process of the first switch, the inductor is connected in parallel in the upper bridge IGBTs (Q1, Q3 and Q5), a control signal is sent to gate poles of the lower bridge IGBTs (Q2, Q4 and Q6) to control the current on the inductors L1, L2 and L3 (the current is controlled through the opening time), and in the closing process, due to the non-abrupt change characteristic of the inductive current, the inductive current forms a current loop through diodes of the upper bridge IGBTs (Q1, Q3 and Q5).
2) The control module controls the first switch to be switched off and the second switch to be switched on, and enables the driving module to perform the following control: controlling the lower bridge IGBT to be in a closed state; and generating a pulse signal to act on a gate electrode of the upper bridge IGBT to test the diode characteristic of the lower bridge IGBT and the overcurrent capacity of the upper bridge IGBT.
When the on-off state of the first switch, the second switch and the IGBT module is kept, the current collecting module collects current in a loop, dynamic parameters are displayed in a testing process through an oscilloscope and are used for analysis, other dynamic parameters are calculated according to the displayed dynamic parameters, and dynamic parameter testing of the IGBT in the inverter is achieved.
The system outputs double-pulse signals through the control module and the driving module to control the on and off of the IGBT, and controls the current by controlling different on-time; in the process, the conduction voltage drop of the IGBT, the conduction voltage drop of the FRD, the current change rate and the voltage change rate of the IGBT and the reverse recovery current of the FRD are measured by an oscilloscope; the dynamic working characteristics of the IGBT and the FRD are analyzed and calculated according to the time parameters of the turn-on (turn-off) delay and the turn-on (turn-off) process and the like.
The oscilloscope configured by the system can conduct voltage drop on the IGBT, conduct voltage drop on the FRD, current change rate and voltage change rate of the IGBT and reverse recovery current of the FRD; displaying some time parameters and the like of the turn-on (turn-off) delay and the turn-on (turn-off) process, and obtaining the turn-on loss and the turn-off loss of related devices through the conversion of an oscilloscope; the stray inductance of the bus can be obtained by obtaining a related calculation formula:
in the formula, U-voltage drop, di/dt-current change rate.
The system is designed according to the practical use of the IGBT module in the three-phase inverter, and the reliability of the IGBT in the three-phase inverter is considered; the main function of the three-phase inverter is electric treatment; for example, in an electric drive system of a new energy automobile, the electric drive system comprises three parts, namely a motor, an electric control part and a speed reducer; the IGBT module is arranged in an electric control part and has two main functions, namely, when the motor runs, the direct current is converted into alternating current to provide power for the motor, and the alternating current is DC-AC; secondly, during the deceleration of the motor, three-phase alternating current generated by the motor is converted into direct current to recycle the power supply to charge the battery, and the alternating current is AC-DC; in the process of converting DC-AC and AC into DC, the power is divided into two parts, one part is reactive power, and the other part is active power; the reactive power is not applied, and is mainly reflected on the inverter.
After testing the dynamic performance parameters of the IGBT module, the system can also be used for testing the reliability of the IGBT module, namely static performance; pulses are loaded on IGBT gate poles forming the three-phase circuit through the driving module respectively, the three-phase circuit is aged in a working state mode, the conditions of all parameters in the aging process are displayed through an oscilloscope, the static performance of the IGBT module is obtained through parameter analysis, and if the oscilloscope displays normal current and voltage parameters and continues the whole aging process in the aging process, the IGBT module is proved to have better reliability.
The dynamic performance parameters are tested firstly, and then the reliability test is carried out, products with potential defects are screened out by testing the dynamic performance parameters through double pulses, if the dynamic performance parameters do not pass the test, the reliability test is not needed, and the test link is saved.
The reliability test of the present disclosure may employ a triangular plate using a required test switching frequency as a carrier wave, and a positive ripple wave to be tested as a fundamental wave to design a switching logic for controlling the IGBT module. The method comprises the steps that by means of a modulation technology, when the IGBT is switched on and switched off, actually, triangular waves are adopted, and the PWM pulse width of IGBT control logic is determined through the intersection point of the triangular waves and sine waves to modulate sine waves; the reliability of the IGBT in practical application is tested by using a pulse width modulation method to obtain positive sine waves with the parameter phase difference of 120 degrees on three load inductors.
The triangular wave in the disclosure is a carrier wave, and the sine wave is that in a motor control system, the A, B, C three-phase current waveform is a sine wave, so that the reliability of the IGBT in actual operation can be simulated.
The control module in the disclosure comprises an integrated chip, wherein a computer software program is stored in the integrated chip, and a control signal is generated under the action of a trigger signal (formed by electrifying, timing and the like) to enable a driving module to generate a pulse signal to load on an IGBT gate pole, so that the on-off control of the IGBT is realized.
Referring to fig. 2, the first switch of the present disclosure includes a relay K1 and a field effect transistor Q7, a normally closed contact of the relay K1 is connected to a drain of the upper bridge IGBT, and a normally open contact is connected to a first inductor L1, a second inductor L2, and a third inductor L3; the coil of the relay K1 is connected in series between the drain electrode of the field effect transistor Q7 and a +12V power supply, the source electrode of the field effect transistor Q7 is connected with the-12V power supply, and the gate electrode is used for controlling signal access and is connected with the control module.
The second switch comprises a relay K2 and a field effect transistor Q8, wherein a normally closed contact of the relay K2 is connected with a first inductor L1, a second inductor L2 and a third inductor L3, and a normally open contact is connected with a source electrode of an IGBT of a lower bridge; the coil of the relay K2 is connected in series between the drain electrode of the field effect transistor Q8 and a +12V power supply, the source electrode of the field effect transistor Q8 is connected with the-12V power supply, and the gate electrode is used for controlling signal access and is connected with the control module.
The field effect transistor Q7 and the field effect transistor Q8 are switched on and off under the output control of the control module, when the field effect transistor is switched on, the coil of the relay is electrified, the contact of the relay is switched on, and the IGBT and the inductor are connected in series to form a loop.
The disclosure only shows an exemplary structure of the first switch and the second switch, and the first switch and the second switch can also adopt controllable devices such as a triode, a silicon controlled rectifier and the like, and are conducted under the control of the control module to enable the IGBT to be connected with the inductor in series.
The on-off of the first switch and the second switch is controlled by the control module, and the first switch and the second switch are controlled to be conducted according to the conduction trigger output. The conduction trigger described herein may be implemented by a computer software program, for example, when the control module starts counting after being powered on, a conduction trigger signal is generated after reaching a target count, and the control module outputs a signal for turning on the first switch and the second switch. The turn-off of the first switch and the second switch is controlled by turn-off triggering, and can also be realized by a computer software program, for example, counting is carried out when the turn-on triggering signal is generated, the turn-off triggering signal is generated after the target counting is reached, and the control module outputs the turn-off of the first switch and the second switch. The continuous realization of changing the turn-off trigger signal and the turn-on trigger signal can realize the control of the on-off time of the first switch and the second switch.
In addition, the on-trigger signal and the off-trigger signal can be formed manually, and the on-trigger signal and the off-trigger signal are formed by switching on and off the switch.
Referring to fig. 3, an exemplary circuit structure of the driving module of the present disclosure is shown. The power supply circuit comprises a chip U1, a capacitor C8, a capacitor C11, a diode D4 and resistors R7 and R10, wherein the chip U1 is used for generating pulse signals under the control of a control module, and the capacitor C8 and the capacitor C11 form a filter circuit which respectively carries out filter processing on a high power supply and a low power supply which are connected to the chip U1, so that power supply interference is reduced; the anode of the diode D4 is connected with one output of the chip U1, and the cathode of the diode D4 is respectively connected with one end of the resistor R7/R8; the other circuit output of the chip U1 is connected with one end of the resistor R9/R10, and the other end of the resistor R7-R10 is connected with the output end of the driving module and is used for being connected with the gate electrode of the IGBT.
One path of the chip U1 outputs high level, the other path outputs low level to form pulse output, and the configuration of the diode D4 ensures that only one path of the two paths of output is output, so that the driving module can effectively output pulse signals. The number of the drive modules is equal to that of the IGBTs, or two drive modules are arranged, wherein one drive module is used for driving the upper bridge IGBT, and the other drive module is used for driving the lower bridge IGBT.
In the disclosure, the current acquisition module is used for enabling the branch where the current acquisition module is located to form current, and the current is accessed by the oscilloscope and is processed by the oscilloscope to display relevant dynamic parameters of the IGBT. The current collection module is configured as a current sensor for sensing a current condition in an operating state of the IGBT.
The control module of the present disclosure includes a chip capable of storing a computer program that is executed upon power-up to implement the control described in the present disclosure. The circuit also comprises a trigger switch, a reset switch, a crystal oscillator circuit, a filter circuit, a current limiting circuit and the like which are connected with the chip.
Referring to fig. 4, the low voltage power module configured in the present system is used for providing 3.3V voltage, and includes a 3.3V regulator chip U2 and a capacitor C12 — a capacitor C15 for filtering the power of the input/output regulator chip U2. The high voltage power supply module is configured to provide 12V or 24V,
the positive and negative voltage isolation power supply module configured by the system mainly has the following functions: 1. the control end power supply is isolated from the drive end power supply, so that the drive end is prevented from being burnt due to high-voltage crosstalk to the control end; 2. the 8V power-off is to prevent the IGBT from being turned on by mistake in the turn-off process, and the +15V power-on makes the IGBT in the full-on state. Referring to fig. 5, the module includes a power transformer T1, a diode D1, capacitors C1-C7, a diode D2, a resistor R1 and a resistor R2, one end of the primary side of the power transformer T1 is connected to a power VCC, the other end is connected to a power VSS, one end of the secondary side is connected to the anode of the diode D1, and the other end is connected to a-8V power supply; the capacitors C1 to C3 are connected between the cathode of the diode D1 and a-8V power supply in parallel; the cathode of the diode D1 forms a 12V power supply, the diode D2 is reversely connected with a circuit ground PGND, and the capacitor C6 and the capacitor C7 are respectively connected between the cathode of the diode D2 and the circuit ground PGND in series; the resistor R1, the resistor R2, the capacitor C4 and the capacitor C5 are respectively connected between a-8V power supply and a circuit ground PGND.
The actual role of the inverter is to process electricity, and the load is mostly inductive load. The system can simulate the inductive load test and effectively test the performance and reliability of the IGBT module in the inductive load. The system simulates the characteristic construction of the inverter in actual work, and can flexibly simulate the working process under inductive load; the system is designed in combination with the inverter without doing work; in the actual work of the inverter-controlled motor, a direct-current power supply can only provide active power, and the inverter provides reactive power, which is commonly referred to as apparent power (the motor control system comprises a power supply, an electric control main control system, an inverter system and a load system, in the motor control system, the power supply part can only provide active power and can not provide reactive power, so that the direct-current power supply can not directly drive a motor load and needs to be inverted into three-phase power through the main control system and the inverter system to drive the motor, in the electric control system, only the motor works, IGBT loss does not work, therefore, performance parameters of an IGBT module in the electric control system can be evaluated through a reactive rack, and product aging can also be carried out through the system).
The system has the advantages of simple test flow, energy conservation, environmental protection and high efficiency, and can accurately evaluate the new energy and the reliability of the inverter formed by the IGBT module. It should be understood that although the present disclosure describes the system testing IGBT modules in an inverter, it is not intended that the system can only be used to test IGBT modules in an inverter, and IGBT modules applied to other inductive loads may also be tested, such as testing individual IGBTs, or pushing off IGBTs in a configuration.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the invention can be made, and equivalents and modifications of some features of the invention can be made without departing from the spirit and scope of the invention.
Claims (8)
1. A power device dynamic parameter and reliability test system is characterized in that the system can flexibly simulate the working process under an inductive load and is used for carrying out dynamic parameter and reliability test on an IGBT module in a circuit with the load as the inductive load; the inductive load module is connected with the IGBT module in series to form a loop when the first switch or the second switch is switched on, the driving module is used for generating a pulse signal to be loaded on the IGBT module to control the on-off of the IGBT module, and the control module is used for generating a control signal to control the working states of the first switch, the second switch and the driving module; the current acquisition module is used for sensing the current of the IGBT module in the test state, and the oscilloscope is used for displaying the lower parameters of the IGBT module in the test state and testing the dynamic parameters and reliability.
2. The power device dynamic parameter and reliability testing system according to claim 1, further comprising a positive and negative voltage isolation power supply module, comprising a power transformer T1, a diode D1, capacitors C1 to C7, a diode D2, a resistor R1 and a resistor R2, wherein one end of a primary side of the power transformer T1 is connected to a power VCC, the other end is connected to a power VSS, one end of a secondary side is connected to an anode of the diode D1, and the other end is connected to a-8V power supply; the capacitors C1-C3 are connected in parallel between the cathode of the diode D1 and a-8V power supply; the cathode of the diode D1 forms a 12V power supply, the diode D2 is reversely connected to a circuit ground PGND, and the capacitor C6 and the capacitor C7 are respectively connected in series between the cathode of the diode D2 and the circuit ground PGND; the resistor R1, the resistor R2, the capacitor C4 and the capacitor C5 are respectively connected between a-8V power supply and a circuit ground PGND.
3. The power device dynamic parameter and reliability testing system of claim 1, further comprising a low power module for generating 3.3V.
4. The power device dynamic parameter and reliability testing system according to claim 1, wherein the first switch comprises a relay K1 and a field effect transistor Q7, a normally closed contact of the relay K1 is connected with a drain of an IGBT constituting an upper bridge of a three-phase circuit, and a normally open contact is connected with the first inductor L1, the second inductor L2 and the third inductor L3; the coil of the relay K1 is connected in series between the drain electrode of the field effect transistor Q7 and a +12V power supply, the source electrode of the field effect transistor Q7 is connected with the-12V power supply, and the gate electrode is used for controlling signal access and is connected with the control module.
5. The power device dynamic parameter and reliability testing system according to claim 1, wherein the second switch comprises a relay K2 and a field effect transistor Q8, a normally closed contact of the relay K2 is connected with the first inductor L1, the second inductor L2 and the third inductor L3, and a normally open contact is connected with a source electrode of an IGBT forming a three-phase circuit lower bridge; the coil of the relay K2 is connected between the drain electrode of the field effect transistor Q8 and a +12V power supply in series, the source electrode of the field effect transistor Q8 is connected with the-12V power supply, and the gate electrode is used for controlling signal access and is connected with the control module.
6. The power device dynamic parameter and reliability test system according to claim 1, wherein the driving module comprises a chip U1, a diode D4 and resistors R7-R10, the chip U1 is configured to generate a pulse signal under the control of the control module, an anode of the diode D4 is connected to one output of the chip U1, and a cathode of the diode D4 is connected to one end of the resistors R7 and R8, respectively; the other output circuit of the chip U1 is connected with one ends of the resistors R9 and R10, and the other ends of the resistors R7 and R10 are connected as the output end of the driving module and are used for being connected with the IGBT gate pole.
7. A method for testing dynamic parameters and reliability of an IGBT is characterized by being carried out by using the testing system of any one of claims 1-6 and firstly carrying out the following construction:
1) One end of the inductive load module is connected with the output end of the IGBT module, the other end of the inductive load module is divided into two paths, one path is connected with a power supply + HP through the first switch, and the other path is connected with the source electrode of the IGBT module through the second switch; the drain electrode and the source electrode of the IGBT module are respectively connected to a high power supply and a low power supply;
2) The driving module is connected with a gate pole of the IGBT module;
3) The control module is respectively connected with the driving module, the first switch and the second switch;
4) A source electrode of the input IGBT module of the oscilloscope;
the IGBT module is applied to the inverter;
after the construction is finished, carrying out dynamic parameter test and reliability test, wherein the dynamic parameter test comprises the following operations:
the control module controls the first switch to be closed and the second switch to be opened, and enables the driving module to perform the following control:
1) Controlling the IGBT of the upper bridge to be in a closed state;
2) Generating a pulse signal to act on a gate pole of the IGBT of the lower bridge so as to test the diode characteristic of the IGBT of the upper bridge and the over-current capability of the IGBT of the lower bridge;
the control module controls the first switch to be switched off and the second switch to be switched on, and enables the driving module to perform the following control:
1) Controlling the IGBT of the lower bridge to be in a closed state;
2) Generating a pulse signal to act on a gate pole of the IGBT of the upper bridge so as to test the diode characteristic of the IGBT of the lower bridge and the over-current capability of the IGBT of the upper bridge;
the oscilloscope is used for displaying dynamic parameters in the test process, analyzing the dynamic parameters, and calculating other dynamic parameters according to the displayed dynamic parameters to realize the dynamic parameter test of the IGBT module;
and the reliability test respectively loads pulse signals to gate poles of the IGBT modules through the driving modules so as to age the IGBTs, and the oscillograph displays the parameter conditions in the aging process.
8. The method for testing dynamic parameters and reliability of an IGBT according to claim 7, characterized in that the reliability test is performed after the dynamic parameter test is completed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117805539A (en) * | 2024-02-29 | 2024-04-02 | 佛山市联动科技股份有限公司 | Dynamic parameter testing device and sorting machine for power device |
| CN118381487A (en) * | 2024-06-24 | 2024-07-23 | 杭州飞仕得科技股份有限公司 | Pulse power supply, power testing system and control method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117805539A (en) * | 2024-02-29 | 2024-04-02 | 佛山市联动科技股份有限公司 | Dynamic parameter testing device and sorting machine for power device |
| CN118381487A (en) * | 2024-06-24 | 2024-07-23 | 杭州飞仕得科技股份有限公司 | Pulse power supply, power testing system and control method |
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