CN115932420B - Electric field sensor - Google Patents
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Abstract
The present application relates to an electric field sensor, comprising: a base frame; the fixed electrode is connected with the base frame; a piezoelectric drive beam connected to the base frame, the piezoelectric drive beam comprising a plurality of excitation regions; a driving circuit that applies a driving voltage to each of the excitation regions, wherein the driving voltage applied to each of the excitation regions drives each of the excitation regions to move in the same direction in the vertical direction; and the movable electrode is arranged on the piezoelectric driving beam, and is positioned on the same plane with the fixed electrode when the electric field sensor is in a non-working state. The electric field sensor with higher sensitivity is realized.
Description
Technical Field
The present application relates to the field of electric field sensors, and in particular, to an electric field sensor.
Background
MEMS (Micro-Electro-Mechanical System, micro-electromechanical system) electric field sensors have wide application in space electric field measurement and are also the main research direction of miniature electric field sensors because of the advantages of miniaturization, low power consumption, integration, easy mass production and the like.
In the prior art, a piezoelectric cantilever beam type MEMS electric field sensor and a double-end fixedly supported piezoelectric beam type MEMS electric field sensor are arranged, wherein the piezoelectric cantilever beam type MEMS electric field sensor adopts a cantilever beam type structure, one end of a piezoelectric beam of the piezoelectric cantilever beam type MEMS electric field sensor is supported, and the other end of the piezoelectric beam is suspended; the double-end supporting piezoelectric beam type MEMS electric field sensor adopts a double-end supporting structure, and both ends of a piezoelectric beam are supported.
However, the amplitude of the piezoelectric beam is positively correlated with the beam length, and the beam length of the piezoelectric cantilever beam type MEMS electric field sensor is limited because the piezoelectric cantilever beam type MEMS electric field sensor is supported at only one end, while the piezoelectric cantilever beam type MEMS electric field sensor with two ends fixedly supported can manufacture longer beams, but the amplitude of the piezoelectric beam is far smaller than that of the piezoelectric beam of the piezoelectric cantilever beam type MEMS electric field sensor with the same length. Therefore, the displacement of the piezoelectric beam of the MEMS electric field sensor in the conventional technology is limited, and thus there is a problem of low sensitivity.
Disclosure of Invention
In view of the above, it is necessary to provide an electric field sensor having high sensitivity.
The application provides an electric field sensor, the electric field sensor includes: a base frame; the fixed electrode is connected with the base frame; the piezoelectric driving beam is connected with the base frame and comprises a plurality of excitation areas; a driving circuit for applying a driving voltage to each of the excitation areas, wherein the driving voltage applied to each of the excitation areas drives each of the excitation areas to move in the same direction in the vertical direction; and the movable electrode is arranged on the piezoelectric driving beam, and is positioned on the same plane with the fixed electrode when the electric field sensor is in a non-working state.
In one embodiment, the piezoelectric drive beam is a comb structure.
In one embodiment, the piezoelectric driving beam comprises a main beam and a plurality of comb beams connected with the main beam; the piezoelectric driving beam comprises a first excitation area, a second excitation area and a third excitation area; the first excitation areas are positioned at two ends of the main beam; the second excitation area is positioned at the middle section of the main beam; the third excitation area is located on the comb beam.
In one embodiment, the driving circuit is configured to apply alternating currents having the same amplitude and opposite phases to the first excitation region and the second excitation region, and to apply alternating currents having the same phase to the first excitation region and the third excitation region.
In one embodiment, the fixed electrode is a comb-tooth structure or a bar-shaped structure.
In one embodiment, the fixed electrodes are interleaved with the movable electrodes.
In one embodiment, the piezoelectric driving beam comprises an upper insulating layer, an upper driving electrode, a piezoelectric layer, a lower driving electrode, a lower insulating layer and an elastic beam which are arranged in a laminated manner; wherein, the lower insulating layer is located on the elastic beam, the lower driving electrode is located on the lower insulating layer, the piezoelectric layer is located on the lower driving electrode, the upper driving electrode is located on the piezoelectric layer, and the upper insulating layer is located on the upper driving electrode.
In one embodiment, the movable electrode is connected to the upper insulating layer.
In one embodiment, the shape of the movable electrode matches the shape of the piezoelectric drive beam.
In one embodiment, the fixed electrode, the movable electrode, the upper driving electrode and the lower driving electrode are all made of at least one of aluminum, copper, titanium, silver, platinum, gold, tin and indium; the upper insulating layer and the lower insulating layer are made of at least one of silicon oxide, aluminum oxide, zirconium oxide, hafnium oxide, yttrium oxide, cerium oxide and silicon nitride; the piezoelectric layer is made of at least one of aluminum nitride, zinc oxide, lead titanate, lead zirconate titanate, barium titanate, bismuth ferrite, potassium sodium niobate, lead magnesium niobate-lead titanate and piezoelectric polymer.
The electric field sensor comprises a base frame, a fixed electrode, a piezoelectric driving beam, a driving circuit and a movable electrode; the fixed electrode is connected with the base frame, the piezoelectric driving beam is connected with the base frame, the movable electrode is arranged on the piezoelectric driving beam, and the movable electrode and the fixed electrode are positioned on the same plane when the electric field sensor is in a non-working state; the piezoelectric driving beam includes a plurality of excitation areas, and the driving circuit applies a driving voltage to each of the excitation areas, and the driving voltage applied to each of the excitation areas drives each of the excitation areas to move in the same direction in the vertical direction. According to the method, the superposition of the displacement of each excitation area in the piezoelectric driving beam is realized through distributed excitation, so that the piezoelectric driving beam obtains larger vertical displacement, the movable electrode on the piezoelectric driving beam also obtains larger vertical displacement, and the larger the vertical displacement of the movable electrode is, the better the sensitivity of the electric field sensor is. Therefore, the electric field sensor with higher sensitivity is realized.
Drawings
FIG. 1 is a block diagram of an electric field sensor in one embodiment;
FIG. 2 is a block diagram of a piezoelectric actuator beam in one embodiment;
FIG. 3 is a block diagram of an electric field sensor in one operating state in one embodiment;
FIG. 4 is a block diagram of a fixed electrode and a movable electrode according to one embodiment;
FIG. 5 is a block diagram of another fixed electrode and movable electrode in one embodiment;
fig. 6 is a block diagram of another piezoelectric actuator beam in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In this application, unless specifically stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, for example, two, three, etc., unless explicitly defined otherwise.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
The MEMS electric field sensor based on the charge induction principle is widely applied to space electric field measurement, and is generally composed of a shielding electrode, an induction electrode and a driving structure, wherein the shielding electrode periodically shields the induction electrode under the driving of the driving structure, so that an electric field falling onto the induction electrode is modulated, and the induction charge on the induction electrode is periodically changed, so that the electric field intensity of a space can be detected by detecting the magnitude of current on the induction electrode. The common driving modes of the MEMS electric field sensor comprise thermal driving, electrostatic driving, electromagnetic driving, piezoelectric driving and the like, and compared with other driving modes, the piezoelectric driving mode has the advantages of low power consumption, high response speed, magnetic field interference resistance and the like. In the prior art, two MEMS electric field sensors adopting a piezoelectric driving mode are adopted, one is a piezoelectric cantilever beam type MEMS electric field sensor, the other is a double-end fixedly supported piezoelectric beam type MEMS electric field sensor, wherein the piezoelectric cantilever beam type MEMS electric field sensor adopts a cantilever beam type structure, one end of a piezoelectric beam of the piezoelectric cantilever beam type MEMS electric field sensor is supported, and the other end of the piezoelectric beam is suspended; the double-end supporting piezoelectric beam type MEMS electric field sensor adopts a double-end supporting structure, and both ends of a piezoelectric beam are supported. However, the amplitude of the piezoelectric beam is positively correlated with the beam length, and the amplitude of the piezoelectric beam determines the sensitivity of the MEMS electric field sensor, the larger the amplitude of the piezoelectric beam, the higher the sensitivity of the MEMS electric field sensor. However, the piezoelectric cantilever beam type MEMS electric field sensor is only supported at one end, so that the beam length is limited, and the double-end fixedly supported piezoelectric beam type MEMS electric field sensor can manufacture longer beams, but the amplitude of the piezoelectric beam is far smaller than that of the piezoelectric beam of the piezoelectric cantilever beam type MEMS electric field sensor with the same length. Therefore, the displacement of the piezoelectric beam of the MEMS electric field sensor in the conventional art is limited, resulting in low sensitivity, and based on this, it is necessary to propose an electric field sensor having high sensitivity.
In one embodiment, as shown in FIG. 1, there is provided a block diagram of an electric field sensor comprising: a base frame 100; a fixed electrode 200, the fixed electrode 200 being connected to the base frame 100; a piezoelectric drive beam 300, the piezoelectric drive beam 300 being connected to the base frame 100, the piezoelectric drive beam 300 comprising a plurality of excitation areas; a driving circuit 500 for applying a driving voltage to each of the excitation areas, wherein the driving voltage applied to each of the excitation areas drives each of the excitation areas to move in the same direction in the vertical direction; the movable electrode 400 is disposed on the piezoelectric driving beam 300, and the movable electrode 400 and the fixed electrode 200 are located on the same plane when the electric field sensor is in a non-operating state. The driving circuit 500 may be disposed inside the piezoelectric driving beam 300 or may be disposed outside the piezoelectric driving beam 300, and thus the driving circuit 500 is not shown in fig. 1.
Alternatively, the base frame 100 is used for fixing the electrode 200 and the piezoelectric driving beam 300, the base frame 100 is an insulator, and is made of at least one of silicon oxide, aluminum oxide, zirconium oxide, hafnium oxide, yttrium oxide, cerium oxide, and silicon nitride, and the shape of the base frame 100 is a rectangular structure. The fixed electrode 200 and the movable electrode 400 are both induction electrodes, and can generate induction charges under the action of an electric field, wherein the fixed electrode 200 can be one or more groups, and the movable electrode 400 can be one or more groups, which is not limited herein. The piezoelectric driving beam 300 and the movable electrode 400 may be connected together by adhesion, and thus the piezoelectric driving beam 300 may drive the movable electrode 400 to move. The piezoelectric driving beam 300 includes a plurality of excitation regions, which are obtained by dividing the piezoelectric driving beam 300, and the specific positions of the respective excitation regions on the piezoelectric driving beam 300 and how many excitation regions are provided may be set as needed, and are not limited thereto. The driving circuit 500 may supply alternating currents with different phases, different amplitudes and the same frequency to each excitation area, and the driving circuit 500 may be one or more, and when the driving circuit 500 is one, a plurality of circuit units and a plurality of output interfaces are provided in the driving circuit 50, the plurality of circuit units are connected with the plurality of output interfaces in a one-to-one correspondence manner, and the plurality of circuit units may generate set alternating current driving voltages with different phases, different amplitudes and the same frequency and output the alternating current driving voltages to the plurality of excitation areas through the plurality of output interfaces; when the driving circuits 500 are plural, the plural driving circuits 500 are in one-to-one correspondence with the plural excitation areas, and each driving circuit 500 individually supplies an ac driving voltage of set phase, amplitude and frequency to one excitation area. The respective excitation areas can move in the same direction in the vertical direction under the action of a set ac driving voltage, wherein the vertical direction refers to the direction perpendicular to the plane of the piezoelectric driving beam 300. In addition, in the design stage of the electric field sensor, the respective target ac drive voltages capable of generating the maximum displacement in the vertical direction of the respective excitation regions may be obtained by continuously adjusting the phase and the amplitude of the ac drive voltages applied to the respective excitation regions, and the respective target ac drive voltages may be applied to the respective corresponding excitation regions so as to move the respective excitation regions in the vertical direction in the same direction.
The working principle of the electric field sensor is as follows: when the driving circuit 500 applies a driving voltage to each excitation area on the piezoelectric driving beam 300 to move the excitation areas in the same direction in the vertical direction, the piezoelectric driving beam 300 vibrates to drive the movable electrode 400 to vibrate, that is, to move up and down in the vertical direction. In the vibration process, the fixed electrode 200 and the movable electrode 400 are mutually shielding electrodes, when the movable electrode 400 is lower than the plane of the fixed electrode 200, the fixed electrode 200 is used as the shielding electrode of the movable electrode 400, so that the area of the movable electrode 400 contacted with an electric field to be measured is reduced, and the induction charge on the surface of the movable electrode 400 is reduced; when the movable electrode 400 is higher than the plane of the fixed electrode 200, the movable electrode 400 acts as a shielding electrode of the fixed electrode 200, so that the area of the fixed electrode 200 contacting the electric field to be measured is reduced, and the induced charges on the surface of the fixed electrode 200 are reduced. Therefore, the induction charge amounts on the surfaces of the fixed electrode 200 and the movable electrode 400 periodically change along with the vibration of the piezoelectric driving beam 300, and then the induction currents on the surfaces of the fixed electrode 200 and the movable electrode 400 are output in a differential mode, and the electric field strength of the electric field to be detected can be detected by detecting the output induction currents.
In summary, the electric field sensor includes a base frame 100, a fixed electrode 200, a piezoelectric driving beam 300, a driving circuit 500, and a movable electrode 400; wherein the fixed electrode 200 is connected with the base frame 100, the piezoelectric driving beam 300 is connected with the base frame 100, the movable electrode 400 is arranged on the piezoelectric driving beam 300, and the movable electrode 400 and the fixed electrode 200 are positioned on the same plane when the electric field sensor is in a non-working state; the piezoelectric driving beam 300 includes a plurality of excitation regions, and the driving circuit 500 applies a driving voltage to each of the excitation regions, and the driving voltage applied to each of the excitation regions drives each of the excitation regions to move in the same direction in the vertical direction. The application realizes the superposition of the displacement of each excitation area in the piezoelectric driving beam 300 through distributed excitation, so that the piezoelectric driving beam 300 obtains larger vertical displacement, the movable electrode 400 positioned on the piezoelectric driving beam 300 also obtains larger vertical displacement, and the larger the vertical displacement of the movable electrode 400 is, the better the sensitivity of the electric field sensor is. Therefore, the electric field sensor with higher sensitivity is realized.
In one embodiment, as shown in fig. 2, a structural diagram of a piezoelectric driving beam is provided, and the piezoelectric driving beam 300 has a comb structure.
In one embodiment, the piezoelectric driving beam 300 includes a main beam and a plurality of comb beams connected to the main beam; the piezoelectric driving beam 300 includes a first excitation region 301, a second excitation region 302, and a third excitation region 303; wherein the first excitation areas 301 are located at two ends of the main beam; the second excitation area 302 is located in the middle section of the main beam; the third excitation area 303 is located on the comb beam.
In one embodiment, the driving circuit 500 is configured to apply alternating currents having the same amplitude and opposite phases to the first excitation area 301 and the second excitation area 302, and to apply alternating currents having the same phase to the first excitation area 301 and the third excitation area 303.
Alternatively, as shown in fig. 3, there is provided a structural diagram of an electric field sensor in an operation state, which is a change in the electric field sensor that occurs between the piezoelectric driving beam 300 and the movable electrode 400 when the driving circuit 500 applies alternating current to each excitation area in the above-described manner. Wherein the alternating currents applied by the driving circuit 500 to the first excitation area 301, the second excitation area 302, and the third excitation area 303 are the same frequency alternating currents; the amplitude of the alternating current applied to the first excitation region 301 and the third excitation region 303 may be the same or different, and is not limited herein.
By designing the piezoelectric driving beam 300 into a comb structure, applying alternating currents with the same amplitude and opposite phases to the two ends and the middle section of the main beam of the piezoelectric driving beam 300, and applying alternating currents with the same phases to the alternating currents applied to the two ends of the main beam to the comb beam of the piezoelectric driving beam 300, distributed excitation is realized, so that the piezoelectric driving beam 300 obtains larger vertical displacement in the vertical direction, the movable electrode 400 positioned on the piezoelectric driving beam 300 also obtains larger vertical displacement, and an electric field sensor with higher sensitivity is realized.
In one embodiment, the fixed electrode 200 is a comb-tooth structure or a bar-shaped structure.
In one embodiment, the fixed electrodes 200 are interleaved with the movable electrodes 400.
In one embodiment, the shape of the movable electrode 400 matches the shape of the piezoelectric drive beam 300.
Alternatively, as shown in fig. 4, a structure diagram of fixed electrodes and movable electrodes is provided, wherein the fixed electrodes 200 are two groups, the shape is a comb structure, and the movable electrodes 400 are comb structures. As shown in fig. 5, another structure of fixed electrodes and movable electrodes is provided, wherein the fixed electrodes 200 are a group, the shape is a bar structure, and the movable electrodes 400 are comb structures. In addition, the fixed electrode 200 and the movable electrode 400 are sensing electrodes and shielding electrodes as sensing structures of the electric field sensor.
By staggering the fixed electrode 200 and the movable electrode 400, when the movable electrode 400 moves vertically under the action of the driving circuit 500, the ratio of the effective sensing area to the device area is increased, and the output signal of the electric field sensor is further enhanced.
In one embodiment, as shown in fig. 6, there is provided a structural diagram of another piezoelectric driving beam, the piezoelectric driving beam 300 including an upper insulating layer 310, an upper driving electrode 320, a piezoelectric layer 330, a lower driving electrode 340, a lower insulating layer 350, and an elastic beam 360, which are stacked; wherein the lower insulating layer 350 is disposed on the elastic beam 360, the lower driving electrode 340 is disposed on the lower insulating layer 350, the piezoelectric layer 330 is disposed on the lower driving electrode 340, the upper driving electrode 320 is disposed on the piezoelectric layer 330, and the upper insulating layer 310 is disposed on the upper driving electrode 320.
In one embodiment, the movable electrode 400 is connected to the upper insulating layer 310.
In one embodiment, the fixed electrode 200, the movable electrode 400, the upper driving electrode 320, and the lower driving electrode 340 are all made of at least one of aluminum, copper, titanium, silver, platinum, gold, tin, and indium; the upper insulating layer 310 and the lower insulating layer 350 are each made of at least one of silicon oxide, aluminum oxide, zirconium oxide, hafnium oxide, yttrium oxide, cerium oxide, and silicon nitride; the piezoelectric layer 330 is made of at least one of aluminum nitride, zinc oxide, lead titanate, lead zirconate titanate, barium titanate, bismuth ferrite, potassium sodium niobate, lead magnesium niobate-lead titanate, and piezoelectric polymer.
The thickness of the base frame 100 may be set according to practical needs, and the thicknesses of the fixed electrode 200, the movable electrode 400, the upper insulating layer 310, the upper driving electrode 320, the piezoelectric layer 330, the lower driving electrode 340, the lower insulating layer 350, and the elastic beam 360 may be 1 nm to 1 mm. The upper and lower insulating layers 310 and 350 protect the upper and lower driving electrodes 320, 330, 340 from interference and also protect the fixed and movable electrodes 200 and 400 from interference of the piezoelectric driving beams 300.
Alternatively, the electric field sensor applies an ac driving voltage to the piezoelectric layer 330 via the upper driving electrode 320 and the lower driving electrode 340 in an operating state to make the piezoelectric layer 330 have a d 31 The mode performs bending vibration in the vertical direction, driving the piezoelectric driving beam 300 and the movable electrode 400 to perform bending vibration in the vertical direction. Wherein d 31 The mode indicates that the piezoelectric layer 330 is subjected to stress in direction 1 with its mechanical deformation along direction 1, but its polarization direction is direction 3.
In addition, a finite element simulation model was built for the electric field sensor in the present application, and it was found that the maximum displacement of the movable electrode 400 was 25.9 μm under the above-described distributed excitation. And the maximum displacement of the movable electrode 400 calculated using the model of the electric field sensor not using distributed excitation with the same structural size, the same excitation voltage amplitude is 17.7 μm. The result shows that the displacement of the movable electrode can be effectively increased by adopting distributed excitation, and then the change amount of the induced charges on the induction electrode can be increased, so that the sensitivity and the resolution of the electric field sensor are improved.
In summary, the electric field sensor includes a base frame 100, a fixed electrode 200, a piezoelectric driving beam 300, a driving circuit 500, and a movable electrode 400; the fixed electrode 200 is in a comb structure or a bar structure, the piezoelectric driving beam 300 is in a comb structure, the shape of the movable electrode 400 is matched with that of the piezoelectric driving beam 300, and the fixed electrode 200 and the movable electrode 400 are staggered. The fixed electrode 200 is connected to the base frame 100, the piezoelectric driving beam 300 is connected to the base frame 100, the movable electrode 400 is disposed on the piezoelectric driving beam 300, and the movable electrode 400 and the fixed electrode 200 are located on the same plane when the electric field sensor is in a non-operating state. The piezoelectric driving beam 300 includes an upper insulating layer 310, an upper driving electrode 320, a piezoelectric layer 330, a lower driving electrode 340, a lower insulating layer 350, and an elastic beam 360, which are stacked; wherein, the lower insulating layer 350 is located on the elastic beam 360, the lower driving electrode 340 is located on the lower insulating layer 350, the piezoelectric layer 330 is located on the lower driving electrode 340, the upper driving electrode 320 is located on the piezoelectric layer 330, the upper insulating layer 310 is located on the upper driving electrode 320, and the movable electrode 400 is disposed on the upper insulating layer 310. Wherein, the fixed electrode 200, the movable electrode 400, the upper driving electrode 320 and the lower driving electrode 340 are all made of at least one of aluminum, copper, titanium, silver, platinum, gold, tin and indium; the upper insulating layer 310 and the lower insulating layer 350 are each made of at least one of silicon oxide, aluminum oxide, zirconium oxide, hafnium oxide, yttrium oxide, cerium oxide, and silicon nitride; the piezoelectric layer 330 is made of at least one of aluminum nitride, zinc oxide, lead titanate, lead zirconate titanate, barium titanate, bismuth ferrite, potassium sodium niobate, lead magnesium niobate-lead titanate, and piezoelectric polymer. The piezoelectric driving beam 300 comprises a main beam and a plurality of comb-tooth beams connected with the main beam, wherein the piezoelectric driving beam 300 comprises a first excitation area 301, a second excitation area 302 and a third excitation area 303, the first excitation area 301 is positioned at two ends of the main beam, the second excitation area 302 is positioned at the middle section of the main beam, and the third excitation area 303 is positioned on the comb-tooth beams. The driving circuit 500 is configured to apply alternating currents having the same amplitude and opposite phases to the first excitation region 301 and the second excitation region 302, and to apply alternating currents having the same phase to the first excitation region 301 and the third excitation region 303. The respective excitation regions are driven to move in the same direction in the vertical direction by applying a driving voltage to the respective excitation regions. The superposition of the displacement of each excitation area in the piezoelectric driving beam 300 is realized through distributed excitation, so that the piezoelectric driving beam 300 obtains larger vertical displacement, the movable electrode 400 positioned on the piezoelectric driving beam 300 also obtains larger vertical displacement, and the larger the vertical displacement of the movable electrode 400 is, the larger the variation of the induced charges on the surfaces of the movable electrode 400 and the fixed electrode 200 is, so that the sensitivity and the resolution of the electric field sensor are improved. And the electric field sensor of this application low in power consumption, miniaturization and simple structure, easily batch production.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application shall be subject to the appended claims.
Claims (7)
1. An electric field sensor, the electric field sensor comprising:
a base frame;
the fixed electrode is connected with the base frame;
a piezoelectric drive beam connected to the base frame, the piezoelectric drive beam comprising a plurality of excitation regions;
a driving circuit that applies a driving voltage to each of the excitation regions, wherein the driving voltage applied to each of the excitation regions drives each of the excitation regions to move in the same direction in the vertical direction;
the movable electrode is arranged on the piezoelectric driving beam, and the movable electrode and the fixed electrode are positioned on the same plane when the electric field sensor is in a non-working state;
the piezoelectric driving beam is of a comb structure; the piezoelectric driving beam comprises a main beam and a plurality of comb-tooth beams connected with the main beam; the piezoelectric driving beam comprises a first excitation area, a second excitation area and a third excitation area; the first excitation areas are positioned at two ends of the main beam; the second excitation area is positioned at the middle section of the main beam; the third excitation area is positioned on the comb-tooth beam;
the driving circuit is used for applying alternating currents with the same amplitude and opposite phases to the first excitation area and the second excitation area, and is used for applying alternating currents with the same phases to the first excitation area and the third excitation area.
2. The electric field sensor of claim 1, wherein the fixed electrode is a comb-tooth structure or a bar-shaped structure.
3. The electric field sensor of claim 2, wherein the fixed electrode is interleaved with the movable electrode.
4. The electric field sensor of claim 1, wherein the piezoelectric drive beam comprises an upper insulating layer, an upper drive electrode, a piezoelectric layer, a lower drive electrode, a lower insulating layer, and an elastic beam, which are stacked;
the lower insulating layer is located on the elastic beam, the lower driving electrode is located on the lower insulating layer, the piezoelectric layer is located on the lower driving electrode, the upper driving electrode is located on the piezoelectric layer, and the upper insulating layer is located on the upper driving electrode.
5. The electric field sensor of claim 4, wherein the movable electrode is connected to the upper insulating layer.
6. The electric field sensor of claim 5, wherein the shape of the movable electrode matches the shape of the piezoelectric drive beam.
7. The electric field sensor of claim 4, wherein the fixed electrode, the movable electrode, the upper drive electrode, and the lower drive electrode are each made of at least one of aluminum, copper, titanium, silver, platinum, gold, tin, indium;
the upper insulating layer and the lower insulating layer are made of at least one of silicon oxide, aluminum oxide, zirconium oxide, hafnium oxide, yttrium oxide, cerium oxide and silicon nitride;
the piezoelectric layer is made of at least one of aluminum nitride, zinc oxide, lead titanate, lead zirconate titanate, barium titanate, bismuth ferrite, potassium sodium niobate, lead magnesium niobate-lead titanate and piezoelectric polymer.
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| CN108872063A (en) * | 2018-09-07 | 2018-11-23 | 吉林大学 | A kind of minimal feeding device and method based on parametric excitation and synchro-resonance |
| CN110412362A (en) * | 2019-06-26 | 2019-11-05 | 中国科学院电子学研究所 | The mutual bucking electrode micro field sensor of Piezoelectric Driving |
| CN114428189A (en) * | 2022-04-06 | 2022-05-03 | 南方电网数字电网研究院有限公司 | Electric field sensor |
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| CN100430740C (en) * | 2005-06-09 | 2008-11-05 | 中国科学院电子学研究所 | Interlacing vibration type electric-field sensor |
| CN101842916A (en) * | 2008-04-17 | 2010-09-22 | 株式会社村田制作所 | Stacked piezoelectric element and piezoelectric pump |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108872063A (en) * | 2018-09-07 | 2018-11-23 | 吉林大学 | A kind of minimal feeding device and method based on parametric excitation and synchro-resonance |
| CN110412362A (en) * | 2019-06-26 | 2019-11-05 | 中国科学院电子学研究所 | The mutual bucking electrode micro field sensor of Piezoelectric Driving |
| CN114428189A (en) * | 2022-04-06 | 2022-05-03 | 南方电网数字电网研究院有限公司 | Electric field sensor |
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