CN115915883A - Preparation method of perovskite solar cell - Google Patents
Preparation method of perovskite solar cell Download PDFInfo
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- CN115915883A CN115915883A CN202310211250.9A CN202310211250A CN115915883A CN 115915883 A CN115915883 A CN 115915883A CN 202310211250 A CN202310211250 A CN 202310211250A CN 115915883 A CN115915883 A CN 115915883A
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Abstract
The invention provides a preparation method of a perovskite solar cell, belonging to the technical field of perovskite cells and comprising the following steps: preparing a perovskite light absorption layer; the perovskite light absorption layer is formed by perovskite light absorption layer precursor liquid; the perovskite light absorption layer precursor liquid comprises: a solvent and a solute; the solvent comprises: a first solvent and a second solvent; the first solvent is selected from one or more polar solvents with high saturated vapor pressure, such as N, N-dimethylformamide, N-methyl-2-pyrrolidone, 2-methoxyethanol, acetonitrile and the like; the second solvent is 1-methylimidazole. The invention takes 1-methylimidazole with low saturated vapor pressure as a solvent to form a stable intermediate phase, obtains a high-quality perovskite light absorption layer, and has better performance when being used for preparing a perovskite solar cell.
Description
Technical Field
The invention belongs to the technical field of perovskite cells, and particularly relates to a preparation method of a perovskite solar cell.
Background
The method is characterized in that the improvement of the crystallization quality of the perovskite light absorption layer is a key for obtaining a college perovskite solar cell, in the preparation process of the perovskite light absorption layer, a solvent system can obviously influence the nucleation growth process, common solvents comprise N, N-dimethylformamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone, 2-methoxyethanol, acetonitrile and the like, and as the saturated vapor pressure and DN value of the solvents cannot meet the requirements, the volatilization rate of the solvents is slow or unstable coordination is formed, so that the uneven appearance and crystallization of the light absorption layer are caused.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing a perovskite solar cell, and the perovskite solar cell manufactured by the method provided by the present invention has a high quality perovskite light absorption layer.
The invention provides a preparation method of a perovskite solar cell, which comprises the following steps:
preparing a perovskite light absorption layer;
the perovskite light-absorbing layer is formed by perovskite light-absorbing layer precursor liquid;
the perovskite light-absorbing layer precursor liquid comprises: a solvent and a solute;
the solvent comprises: a first solvent and a second solvent;
the first solvent is selected from one or more polar solvents with high saturated vapor pressure, such as N, N-dimethylformamide, N-methyl-2-pyrrolidone, 2-methoxyethanol, acetonitrile and the like;
the second solvent is 1-methylimidazole.
Preferably, the solute is selected from one or more of methylamine halide, formamidine halide, cesium halide and lead halide.
Preferably, the solute is PbI 2 One or more of (lead iodide), FAI (iodoformamidine) and CsBr (cesium bromide).
Preferably, the ratio of the number of moles of solute in the perovskite light absorption layer precursor solution to the volume of the first solvent is 0.5 to 1.5mol/L;
the molar ratio of the second solvent to the solute is (0.2 to 0.8): 1.
preferably, the perovskite light absorption layer comprises the following components:
MA x FA y Cs (1-x-y) PbI z Br (3-z) ；
wherein x is 0 to 3;
y is 0 to 3;
z is 0 to 3.
Preferably, the thickness of the perovskite light absorption layer is 450 to 550nm.
Preferably, the preparation method of the perovskite solar cell specifically comprises the following steps:
preparing a first charge transport layer on the surface of a substrate;
preparing a perovskite light absorption layer on the surface of the first charge transport layer;
preparing a second charge transport layer on the surface of the perovskite light absorption layer;
and preparing an electrode on the surface of the second charge transport layer.
Preferably, the preparation method of the perovskite light absorption layer comprises the following steps:
and performing wet film coating, solvent removal and annealing on the perovskite light absorption layer precursor liquid.
Preferably, the method of wet film coating is selected from spin coating, knife coating, slit coating, spray coating;
the solvent removing method is selected from one or two of high-pressure gas purging and negative pressure method;
the annealing method is selected from the group consisting of atmosphere annealing, hot plate annealing, and infrared annealing.
Preferably, the annealing temperature is 100 to 150 ℃.
The present invention uses 1-methylimidazole having a low saturated vapor pressure and a high DN value (Donor Number, a measure of the ability of a solvent to dissolve cations and lewis acids) as a solvent to form a stable mesophase, resulting in a high-quality perovskite light-absorbing layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of a perovskite solar cell, which comprises the following steps:
preparing a perovskite light absorption layer;
the perovskite light absorption layer is formed by perovskite light absorption layer precursor liquid;
the perovskite light absorption layer precursor liquid comprises: a solvent and a solute;
the solvent comprises: a first solvent and a second solvent;
the first solvent is selected from one or more polar solvents with high saturated vapor pressure, such as N, N-dimethylformamide, N-methyl-2-pyrrolidone, 2-methoxyethanol, acetonitrile and the like;
the second solvent is 1-methylimidazole.
In the present invention, the first solvent is preferably N, N-dimethylformamide.
In the present invention, the solute is preferably one or more selected from methylamine halide, formamidine halide, cesium halide and lead halide, and more preferably PbI 2 One or more of FAI and CsBr.
In the invention, the concentration of the perovskite light absorption layer precursor liquid (the mol number of solute: the volume of the first solvent) is preferably 0.5 to 1.5mol/L, more preferably 0.8 to 1.2mol/L, and most preferably 1.0mol/L; the molar ratio of the second solvent to the solute is preferably (0.2 to 0.8): 1, more preferably (0.3 to 0.6): 1, most preferably 0.5:1.
in the present invention, the method for preparing the perovskite light-absorbing layer precursor solution preferably includes:
dissolving lead iodide and iodoformamidine into N, N-dimethylformamide, and then adding 1-methylimidazole to dissolve into the solution to obtain perovskite light-absorbing layer precursor solution.
In the present invention, the molar ratio of the lead iodide to the iodoformamidine is preferably (0.8 to 1.2): 1, more preferably 1:1; the concentration of the lead iodide in the N, N-dimethylformamide is preferably 0.5 to 1.5mol/L, more preferably 0.8 to 1.2mol/L, and most preferably 1.0mol/L; the concentration of the 1-methylimidazole in the N, N-dimethylformamide is preferably 0.4 to 0.6mol/L, and more preferably 0.5mol/L.
In the present invention, the composition of the perovskite light absorbing layer is preferably:
MA x FA y Cs (1-x-y) PbI z Br (3-z) ；
wherein MA is an abbreviation for methylamine, and FA is an abbreviation for formamidine;
x is 0 to 3;
y is 0 to 3;
z is 0 to 3.
In the invention, the x is preferably 0.5 to 2.5, more preferably 1 to 2, and most preferably 1.5; the y is preferably 0.5 to 2.5, more preferably 1 to 2, and most preferably 1.5; the z is preferably 0.5 to 2.5, more preferably 1 to 2, and most preferably 1.5.
In the present invention, the component of the perovskite light absorption layer is preferably Cs 0.18 FA 0.82 PbI 2.75 Br 0.25 。
In the invention, the thickness of the perovskite light absorption layer is preferably 400 to 550nm, more preferably 480 to 520nm, and most preferably 500nm.
In the present invention, the method for manufacturing a perovskite solar cell preferably includes:
preparing a first charge transport layer on the surface of a substrate;
preparing a perovskite light absorption layer on the surface of the first charge transport layer;
preparing a second charge transport layer on the surface of the perovskite light absorption layer;
and preparing an electrode on the surface of the second charge transport layer.
In the present invention, the substrate is preferably transparent conductive glass and flexible transparent conductive substrates such as FTO, ITO, AZO, preferably rigid conductive glass.
In the present invention, the substrate is preferably cleaned; preferably, water, acetone, ethanol and isopropanol are adopted for cleaning in sequence, and the water is preferably distilled water; the cleaning is preferably ultrasonic cleaning.
In the present invention, the first charge transport layer is preferably selected from TiO 2 、Al 2 O 3 、SnO 2 Fullerene and its derivative, 2', 7' -tetrakis [ N, N-di (4-methoxyphenyl) amino]-9,9' -spirobifluorene, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine]Isoconjugated polymer, poly 3, 4-ethylenedioxythiophene/polystyrene sulfonate, niO x One or more of CuSCN and the like, and SnO is more preferable 2 (ii) a The thickness of the first charge transport layer is preferably 20 to 200nm, more preferably 50 to 150nm, even more preferably 80 to 120nm, and most preferably 100nm.
In the present invention, the method for preparing the first charge transport layer is preferably selected from spin coating, doctor blade coating, physical vapor deposition or chemical vapor deposition, and more preferably is a thermal evaporation method; the evaporation rate of the thermal evaporation method is preferably 0.1 to 0.3A/s, more preferably 0.2A/s.
In the present invention, the method for preparing the perovskite light absorption layer preferably includes:
wet film coating, solvent removal, and annealing.
In the present invention, the method of wet film coating is preferably selected from spin coating, blade coating, slit coating, spray coating, more preferably spin coating; the rotation speed of the spin coating is preferably 2500 to 3500rpm, more preferably 2800 to 3200rpm and most preferably 3000rpm; the time for the spin coating is preferably 10 to 20s, and more preferably 15s.
In the present invention, the method for removing the solvent is preferably one or more selected from the group consisting of a high-pressure gas purge and a negative-pressure method, and more preferably a high-pressure gas purge.
In the present invention, the annealing method is preferably selected from the group consisting of atmosphere annealing, hot plate annealing or infrared annealing, more preferably hot plate annealing; the annealing temperature is preferably 100 to 150 ℃, more preferably 110 to 140 ℃, and most preferably 120 to 130 ℃; the annealing time is preferably 10 to 30 minutes, more preferably 15 to 25 minutes, and most preferably 20 minutes.
In the present invention, the second charge transport layer is preferably selected from TiO 2 、Al 2 O 3 、SnO 2 Fullerene and its derivative, 2', 7' -tetrakis [ N, N-di (4-methoxyphenyl) amino]-9,9' -spirobifluorene, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine]Isoconjugated polymer, poly 3, 4-ethylenedioxythiophene/polystyrene sulfonate, niO x One or more of CuSCN and the like, and preferably spiro-OMeTAD; the thickness of the second charge transport layer is preferably 10 to 200nm, more preferably 50 to 150nm, more preferably 80 to 120nm, and most preferably 100nm.
In the present invention, the method for producing the second charge transport layer preferably includes:
and coating the second charge transport layer slurry on the surface of the perovskite light absorption layer in a rotating mode to obtain a second charge transport layer.
In the present invention, the second charge transport layer paste includes:
2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorenechlorobenzene solution, lithium salt solution and tributyl phosphate.
In the present invention, the ratio of the 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene to chlorobenzene is preferably (70 to 80) mg:1mL, more preferably 72.3mg:1mL.
In the invention, the lithium salt solution is a bis (trifluoromethanesulfonyl) imide lithium acetonitrile solution.
In the present invention, the ratio of the lithium bistrifluoromethanesulfonimide to the acetonitrile is preferably (50 to 60) mg:100 μ L, more preferably 52mg:100 muL.
In the present invention, the ratio of the mass of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9 '-spirobifluorene in the 2,2',7 '-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene chlorobenzene solution, the volume of the lithium salt solution, and the volume of tributyl phosphate is preferably (70 to 80) mg: (15 to 20) μ L: (25 to 30) μ L, more preferably 72.3mg:17.5 Mu L:28.8 And mu L.
In the present invention, the speed of the spin coating is preferably 3500 to 4500rpm, more preferably 3800 to 4200rpm, and most preferably 4000rpm.
In the present invention, the electrode is preferably selected from copper, silver, gold and alloys thereof, and carbon materials, more preferably gold or Ag; the thickness of the electrode is preferably 100nm to 100 μm.
In the present invention, the preparation method of the electrode is preferably selected from physical vapor deposition, chemical deposition or printing, more preferably physical vapor deposition, most preferably evaporation; the deposition rate is preferably 0.1 to 0.3A/s, more preferably 0.2A/s.
The invention takes 1-methylimidazole with low saturated vapor pressure as a solvent, and a mixed solvent system is constructed by the 1-methylimidazole with high saturated vapor pressure, and the 1-methylimidazole has a high DN value, so that the 1-methylimidazole is favorable for forming a stable intermediate phase in the volatilization process of the solvent component with high saturated vapor pressure, and a high-quality perovskite light absorption layer is obtained by annealing.
Example 1
Cutting a rigid conductive glass with the thickness of 32mm as a substrate into a cell substrate with the thickness of 4cm multiplied by 4cm, and ultrasonically washing the substrate by distilled water, acetone, ethanol and isopropanol in sequence for later use.
Preparation of NiO on substrate surface by thermal evaporation method x (x is 0.95) Charge transport layer 1, niO x The layer had an evaporation rate of 0.2A/s and a thickness of 50nm.
And preparing the perovskite thin film on the surface of the charge transport layer 1. Preparing a perovskite precursor solution with the concentration of 1.0mol/L (concentration of lead iodide), wherein the molar ratio of lead iodide to iodoformamidine is 1:1, the solvent is N, N-dimethylformamide; and adding 1-methylimidazole and dissolving in the perovskite precursor solution, wherein the concentration is 0.5mol/L, spin-coating the obtained solution on the surface of the charge transport layer 1 (the rotating speed is 3000rpm and is 15s), and annealing at 130 ℃ for 20 minutes to obtain the perovskite thin film with the thickness of 400 nm.
Preparing a charge transport layer 2 on the surface of the passivated perovskite thin film, weighing 72.3mg of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, dissolving in 1mL of chlorobenzene, respectively adding 17.5 muL of lithium salt solution (weighing 52mg of lithium bistrifluoromethylsulfonylimide, dissolving in 100 muL of acetonitrile) and 28.8 muL of tributyl phosphate, stirring overnight to obtain a clear solution, and spin-coating on the surface of the perovskite layer at 4000rpm to obtain the charge transport layer 2 with the thickness of 10 nm.
Preparing a metal Ag electrode layer on the surface of the charge transport layer 2, and performing high vacuum (C and D)<5×10 -4 Pa), evaporating metal Ag to the surface of the charge transport layer 2 at the evaporation rate of 0.2A/s and the thickness of 100nm to obtain the perovskite solar cell.
Example 2
Cutting a rigid conductive glass with the thickness of 32mm as a substrate into a cell substrate with the thickness of 4cm multiplied by 4cm, and ultrasonically washing the substrate by distilled water, acetone, ethanol and isopropanol in sequence for later use.
Preparing NiO on the surface of the substrate by adopting a magnetron sputtering method x (x is 0.95) Charge transport layer 1, niO x The evaporation rate of the layer was 0.2 a/s and the thickness was 50nm.
And preparing the perovskite thin film on the surface of the charge transport layer 1. Preparing a perovskite precursor solution with the concentration of 1.0mol/L (concentration of lead iodide), wherein the molar ratio of lead iodide to iodoformamidine is 1:1, the solvent is N, N-dimethylformamide; and adding 1-methylimidazole to dissolve in the perovskite precursor solution, wherein the concentration is 0.4mol/L, spin-coating the obtained solution on the surface of the charge transport layer 1 (the rotating speed is 3000rpm and the rotating speed is 15s), and annealing at 130 ℃ for 20 minutes to obtain the perovskite thin film with the thickness of 400 nm.
Preparing a charge transport layer 2 on the surface of the passivated perovskite thin film, weighing 72.3mg of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, dissolving in 1mL of chlorobenzene, respectively adding 17.5 muL of lithium salt solution (weighing 52mg of lithium bistrifluoromethylsulfonylimide, dissolving in 100 muL of acetonitrile) and 28.8 muL of tributyl phosphate, stirring overnight to obtain a clear solution, and spin-coating on the surface of the perovskite layer at 4000rpm to obtain the charge transport layer 2 with the thickness of 10 nm.
Preparing a metal Ag electrode layer on the surface of the charge transport layer 2, and performing high vacuum (C and D)<5×10 -4 Pa), evaporating metal Ag to the surface of the charge transport layer 2 at the evaporation rate of 0.2A/s and the thickness of 100nm to obtain the perovskite solar cell.
Example 3
Cutting a rigid conductive glass with the thickness of 32mm as a substrate into a cell substrate with the thickness of 4cm multiplied by 4cm, and ultrasonically washing the substrate by distilled water, acetone, ethanol and isopropanol in sequence for later use.
Preparing NiO on the surface of the substrate by adopting a magnetron sputtering method x (x is 0.95) Charge transport layer 1, niO x The layer had an evaporation rate of 0.2A/s and a thickness of 50nm.
And preparing the perovskite thin film on the surface of the charge transport layer 1. Preparing a perovskite precursor solution with the concentration of 1.0mol/L (concentration of lead iodide), wherein the molar ratio of lead iodide to iodoformamidine is 1:1, the solvent is N, N-dimethylformamide; and adding 1-methylimidazole to dissolve in the perovskite precursor solution, wherein the concentration is 0.6mol/L, spin-coating the obtained solution on the surface of the charge transport layer 1 (the rotating speed is 3000rpm and the rotating speed is 15s), and annealing at 130 ℃ for 20 minutes to obtain the perovskite thin film with the thickness of 400 nm.
Preparing a charge transport layer 2 on the surface of the passivated perovskite thin film, weighing 72.3mg of 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, dissolving in 1mL of chlorobenzene, respectively adding 17.5 muL of lithium salt solution (weighing 52mg of lithium bistrifluoromethanesulfonylimide, dissolving in 100 muL of acetonitrile) and 28.8 muL of tributyl phosphate, stirring overnight to obtain a clear solution, and spin-coating on the surface of the perovskite thin film at 4000rpm to obtain the charge transport layer 2 with the thickness of 10 nm.
Preparing a metal Ag electrode layer on the surface of the charge transport layer 2, and performing high vacuum (C), (B) and (C)<5×10 -4 Pa), evaporating metal Ag to the surface of the charge transport layer 2 at the evaporation rate of 0.2A/s and the thickness of 100nm to obtain the perovskite solar cell.
Comparative example 1
Cutting a rigid conductive glass with the thickness of 32mm as a substrate into a cell substrate with the thickness of 4cm multiplied by 4cm, and ultrasonically washing the substrate by distilled water, acetone, ethanol and isopropanol in sequence for later use.
Preparing NiO on the surface of the substrate by adopting a magnetron sputtering method x (x is 0.95) Charge transport layer 1, niO x The evaporation rate of the layer was 0.2 a/s and the thickness was 50nm.
And preparing the perovskite thin film on the surface of the charge transport layer 1. Preparing a perovskite precursor solution with the concentration of 1.0mol/L (concentration of lead iodide), wherein the molar ratio of lead iodide to iodoformamidine is 1:1, the solvent is N, N-dimethylformamide; the obtained solution was spin-coated on the surface of the charge transport layer 1 (rotation speed 3000rpm, 15s), and annealed at 130 ℃ for 20 minutes to obtain a perovskite thin film having a thickness of 400 nm.
Preparing a charge transport layer 2 on the surface of the passivated perovskite thin film, weighing 72.3mg of 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, dissolving in 1mL of chlorobenzene, respectively adding 17.5 muL of lithium salt solution (weighing 52mg of lithium bistrifluoromethylsulfonylimide, dissolving in 100 muL of acetonitrile) and 28.8 muL of tributyl phosphate, stirring overnight to obtain a clear solution, and spin-coating on the surface of the perovskite layer at 4000rpm to obtain the charge transport layer 2 with the thickness of 10 nm.
Preparing a metal Ag electrode layer on the surface of the charge transport layer 2, and performing high vacuum (C and D)<5×10 -4 Pa), evaporating metal Ag to the surface of the charge transport layer 2 at the evaporation rate of 0.2A/s and the thickness of 100nm to obtain the perovskite solar cell.
Performance detection
The perovskite solar cells prepared in examples 1 to 3 and comparative example 1 were subjected to performance tests: after the light source density of the Si cell corrected by NREL was adjusted to 1 sunlight, the cell was irradiated with a 450W xenon lamp as a light source through an AM 1.5 filter, and the maximum power of the cell was recorded, and the test results are shown in table 1:
table 1 results of performance test of perovskite solar cells prepared in examples and comparative examples
The results show that the maximum power is improved in examples 1 to 3 compared to the comparative examples without 1-methylimidazole additive, wherein the effect is best when the concentration of the 1-methylimidazole additive is 0.5mol/L.
The invention takes 1-methylimidazole with low saturated vapor pressure as a solvent, and a mixed solvent system is constructed by the 1-methylimidazole with high saturated vapor pressure, and the 1-methylimidazole has a high DN value, so that the 1-methylimidazole is favorable for forming a stable intermediate phase in the volatilization process of the solvent component with high saturated vapor pressure, and a high-quality perovskite light absorption layer is obtained by annealing.
While the invention has been described and illustrated with reference to specific embodiments thereof, such description and illustration are not intended to limit the invention. It will be clearly understood by those skilled in the art that various changes in form and details may be made therein without departing from the true spirit and scope of the invention as defined by the appended claims, to adapt a particular situation, material, composition of matter, substance, method or process to the objective, spirit and scope of this application. All such modifications are intended to be within the scope of the claims appended hereto. Although the methods disclosed herein have been described with reference to particular operations performed in a particular order, it should be understood that these operations may be combined, sub-divided, or reordered to form equivalent methods without departing from the teachings of the present disclosure. Accordingly, unless specifically indicated herein, the order and grouping of the operations is not a limitation of the present application.
Claims (10)
1. A preparation method of a perovskite solar cell is characterized by comprising the following steps:
preparing a perovskite light absorption layer;
the perovskite light absorption layer is formed by perovskite light absorption layer precursor liquid;
the perovskite light-absorbing layer precursor liquid comprises: a solvent and a solute;
the solvent comprises: a first solvent and a second solvent;
the first solvent is one or more selected from N, N-dimethylformamide, N-methyl-2-pyrrolidone, 2-methoxyethanol and acetonitrile;
the second solvent is 1-methylimidazole.
2. The method of claim 1, wherein the solute is selected from one or more of methylamine halide, formamidine halide, cesium halide and lead halide.
3. The method according to claim 2, wherein the solute is one or more of lead iodide, formamidine iodide and cesium bromide.
4. The preparation method according to claim 1, wherein the ratio of the number of moles of solute in the perovskite light-absorbing layer precursor to the volume of the first solvent is (0.5 to 1.5) mol:1L;
the molar ratio of the second solvent to the solute is (0.2 to 0.8): 1.
5. the production method according to claim 1, wherein the thickness of the perovskite light absorption layer is 400 to 550nm.
6. The method according to claim 1, wherein the method for manufacturing a perovskite solar cell specifically comprises:
preparing a first charge transport layer on the surface of a substrate;
preparing a perovskite light absorption layer on the surface of the first charge transport layer;
preparing a second charge transport layer on the surface of the perovskite light absorption layer;
and preparing an electrode on the surface of the second charge transport layer.
7. The production method according to claim 6, wherein the production method of the perovskite light absorbing layer comprises:
and performing wet film coating, solvent removal and annealing on the perovskite light absorption layer precursor solution to obtain the perovskite light absorption layer.
8. The method for producing according to claim 7, wherein the wet film coating method is selected from spin coating, blade coating, slit coating, or spray coating;
the method for removing the solvent is selected from one or two of high-pressure gas purging and negative-pressure methods.
9. The method of claim 7, wherein the annealing is selected from the group consisting of atmospheric annealing, hot plate annealing, and infrared annealing.
10. The method according to claim 7, wherein the annealing temperature is 100 to 150 ℃.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124067A (en) * | 2013-04-28 | 2014-10-29 | 黑龙江中天恒基房地产开发集团有限公司 | Dye-sensitized solar cell ion electrolyte |
| WO2020248864A1 (en) * | 2019-06-12 | 2020-12-17 | 杭州纤纳光电科技有限公司 | Passivator, passivation method therefor and method for preparing semiconductor film |
| CN112397652A (en) * | 2020-11-26 | 2021-02-23 | 方金丹 | Preparation method of perovskite solar cell based on MAI @ ZIF-8 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124067A (en) * | 2013-04-28 | 2014-10-29 | 黑龙江中天恒基房地产开发集团有限公司 | Dye-sensitized solar cell ion electrolyte |
| WO2020248864A1 (en) * | 2019-06-12 | 2020-12-17 | 杭州纤纳光电科技有限公司 | Passivator, passivation method therefor and method for preparing semiconductor film |
| CN112397652A (en) * | 2020-11-26 | 2021-02-23 | 方金丹 | Preparation method of perovskite solar cell based on MAI @ ZIF-8 |
Non-Patent Citations (1)
| Title |
|---|
| JIAHAO HUANG等: "Sequential Introduction of Cations Deriving Large-Grain CsxFA1−xPbI3 Thin Film for Planar Hybrid Solar Cells: Insight into Phase-Segregation and Thermal-Healing Behavior" * |
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