CN115915846A

CN115915846A - Display panel and display device

Info

Publication number: CN115915846A
Application number: CN202211409799.0A
Authority: CN
Inventors: 刘晓莉
Original assignee: Shanghai Tianma Microelectronics Co Ltd
Current assignee: Shanghai Tianma Microelectronics Co Ltd
Priority date: 2022-11-10
Filing date: 2022-11-10
Publication date: 2023-04-04

Abstract

The invention discloses a display panel and a display device, wherein the display panel comprises a substrate, a driving circuit layer and a shading layer, wherein the driving circuit layer and the shading layer are sequentially positioned on one side of the substrate; the driving circuit layer comprises a plurality of insulating layers, and part of the insulating layers comprise openings; the insulating layer includes a first insulating layer; the first insulating layer covers the side wall of the opening; the shading layer covers the first insulating layer at the side wall of the opening. By adopting the technical scheme, the insulating layer in the driving circuit layer extends to the opening side wall covering the driving circuit layer, the first insulating layer at the opening side wall is covered by the light shielding layer, the adhesion of the light shielding layer and the substrate is increased, the thin film transistor in the driving circuit layer is wrapped, the influence of light on the thin film transistor in the driving circuit layer is favorably reduced, the problem of light leakage of the Thin Film Transistor (TFT) in the driving circuit layer is solved, and the display effect of the display panel is improved.

Description

Display panel and display device

Technical Field

The embodiment of the invention relates to the technical field of display, in particular to a display panel and a display device.

Background

In a display panel, a Thin Film Transistor (TFT) in a driving circuit layer is sensitive to light, and is prone to a problem of light leakage, which affects normal display of the display panel.

Disclosure of Invention

The invention provides a display panel and a display device.A light shielding layer covers an insulating layer at the side wall of an opening of a driving circuit layer by extending at least one insulating layer in the driving circuit layer, so that the adhesion between the light shielding layer and a substrate is favorably increased, a thin film transistor in the driving circuit layer is wrapped, the influence of light on the thin film transistor in the driving circuit layer is reduced, and the problem of light leakage of the Thin Film Transistor (TFT) in the driving circuit layer is solved.

In a first aspect, an embodiment of the present invention provides a display panel, including a substrate, and a driving circuit layer and a light shielding layer sequentially located on one side of the substrate;

the driving circuit layer comprises a plurality of insulating layers, and part of the insulating layers comprise openings; the insulating layer comprises a first insulating layer; the first insulating layer covers the side wall of the opening; the shading layer covers the first insulating layer on the side wall of the opening.

In a second aspect, an embodiment of the present invention further provides a display device, which includes the display panel provided in the first aspect.

To sum up, the display panel provided by the embodiment of the invention comprises a substrate, and a driving circuit layer and a light shielding layer which are sequentially arranged on one side of the substrate; the drive circuit layer comprises a plurality of insulating layers, and part of the insulating layers comprise openings; the insulating layer includes a first insulating layer; the first insulating layer covers the side wall of the opening; the light shielding layer covers the first insulating layer at the side wall of the opening. By adopting the technical scheme, the insulating layer in the driving circuit layer extends to the opening side wall covering the driving circuit layer, the first insulating layer at the opening side wall is covered by the light shielding layer, the adhesion of the light shielding layer and the substrate is favorably increased, the thin film transistor in the driving circuit layer is wrapped, the influence of light on the thin film transistor in the driving circuit layer is reduced, the problem of light leakage of the Thin Film Transistor (TFT) in the driving circuit layer is solved, and the display effect of the display panel is improved.

Drawings

Fig. 1 is a schematic structural diagram of a display panel provided in the related art;

fig. 2 is a schematic surface view of a display panel according to an embodiment of the present invention;

FIG. 3 is a schematic cross-sectional view of a display panel along direction AA' in FIG. 2;

FIG. 4 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 5 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 6 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 7 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 8 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 9 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 10 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 11 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

FIG. 12 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2;

fig. 13 is a schematic structural diagram of another display device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings, not all of them.

Fig. 1 is a schematic structural diagram of a display panel provided in the related art. As shown in fig. 1, a display panel 100 in the related art includes a display area A1 and a transparent area A2, when the display panel 100 performs transparent display, there is a large area of transparent area, light emitted from a light emitting element 11 in the display area A1 downwards and external environment light incident from the transparent area A2 reach an active layer 10 of a Thin Film Transistor (TFT), the light is totally reflected on a glass surface of a substrate 110, and the reflected light irradiates the TFT device from the lower glass substrate.

In view of the above technical problems, an embodiment of the present invention provides a display panel, which includes a substrate, and a driving circuit layer and a light shielding layer sequentially disposed on one side of the substrate; the driving circuit layer comprises a plurality of insulating layers, and part of the insulating layers comprise openings; the insulating layer includes a first insulating layer; the first insulating layer covers the side wall of the opening; the light shielding layer covers the first insulating layer at the side wall of the opening. By adopting the technical scheme, the insulating layer in the driving circuit layer extends to the opening side wall covering the driving circuit layer, the first insulating layer at the opening side wall is covered by the light shielding layer, the adhesion of the light shielding layer and the substrate is increased, the thin film transistor in the driving circuit layer is wrapped, the influence of light on the thin film transistor in the driving circuit layer can be reduced, the problem of light leakage of the Thin Film Transistor (TFT) in the driving circuit layer is solved, and the display effect of the display panel is improved.

The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.

Fig. 2 is a schematic surface view of a display panel according to an embodiment of the present invention; FIG. 3 is a schematic cross-sectional view of a display panel along direction AA' of FIG. 2; FIG. 4 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2; fig. 5 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. Referring to fig. 2 to 5, a display panel 200 according to an embodiment of the present invention includes a substrate 210, and a driving circuit layer 220 and a light shielding layer 40 sequentially disposed on one side of the substrate 210; the driving circuit layer 220 includes a plurality of insulating layers, and a portion of the insulating layers includes an opening V; the insulating layer includes a first insulating layer 30; the first insulating layer 30 covers the sidewall of the opening V; the light shielding layer 40 covers the first insulating layer 30 at the sidewalls of the opening V.

Specifically, the Display panel 200 includes an Organic Light Emitting Display panel (OLED), a Light Emitting Diode Display panel (LED), a Micro Light Emitting Diode Display panel (Micro LED), and the like, and the embodiment of the invention does not specifically limit the type of the Display panel 200. The substrate 210 of the display panel may be a rigid material such as glass or silicon wafer, or may be a flexible material such as ultra-thin glass, metal foil, or polymer plastic material, and the flexible or rigid substrate 210 may block oxygen and moisture, and prevent moisture or impurities from diffusing into the display panel through the substrate 210.

The structure of the driving circuit layer 30 will be described below by taking a top gate type thin film transistor of the display panel 200 as an example, and the driving circuit layer 220 includes a thin film transistor TFT, a capacitor C, a line L, and the like. The film layers of the driving circuit layer 220 may include a buffer layer 221, an active layer 222, a gate insulating layer 223, a gate electrode 224, an intermediate dielectric layer 225, an interlayer dielectric layer 226, a source electrode 227s, a drain electrode 227d, a passivation layer 228, a connection electrode 229, and a planarization layer 230.

Among them, the buffer layer 221 may prevent impurities such as oxygen, moisture, and the like from penetrating from the substrate 210, and may planarize the substrate 210. In addition, the buffer layer 221 may control a heat transfer rate in an annealing process for formation of the active layer 222. The buffer layer 221 may include a stacked structure of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

The active layer 222 may be disposed on the buffer layer 221, and the active layer 222 may include a channel region 222c and source and

drain regions

222s and 222d located at opposite ends of the channel region 222 c. Taking the example in which the active layer 222 includes a polycrystalline silicon semiconductor, the channel region 222c includes an undoped polycrystalline silicon semiconductor, and the source and

drain regions

222s and 222d may include polycrystalline silicon semiconductors doped with impurities. The active layer 222 may be an n-type semiconductor or a p-type semiconductor. As an example, the impurity doped in the source and

drain regions

222s and 222d may be an n-type impurity, for example, a material such as phosphorus (P) ions may be used as the n-type impurity. As an example, the impurity doped in the source and

drain regions

222s and 222d may be a p-type impurity. For example, a material such as boron (B) ions may be used as the p-type impurity. The active layer 222 may include a silicon semiconductor or an oxide semiconductor. The silicon semiconductor may include one or more of amorphous silicon, single crystal silicon, and polycrystalline silicon, and the active layer 222 may include low temperature polycrystalline silicon, as an example. The gate insulating layer 223 covers the active layer 222, and the gate insulating layer 223 may be disposed on the buffer layer 221. The gate insulating layer 223 may include a stacked structure of one or more of inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. The gate electrode 224 may be disposed on the gate insulating layer 223 and may overlap the channel region 222c of the active layer 222, and the gate electrode 224 and the active layer 222 may form a thin film transistor TFT. The gate electrode 224 may include a metal such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., an alloy thereof, a nitride thereof, a conductive metal oxide, a transparent conductive material, etc. As an example, the gate electrode 224 may include molybdenum (Mo).

An intermediate dielectric layer 225 covers the gate electrode 224 and may be disposed on the gate insulating layer 223. The intermediate dielectric layer 225 may include a stacked structure of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the intermediate dielectric layer 225 may include silicon nitride. An interlayer dielectric layer 226 may be disposed on the interlayer dielectric layer 225, and the interlayer dielectric layer 226 may include a stacked structure of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

The source 227s may contact the source region 222s of the active layer 222, and the drain 227d may contact the drain region 222d of the active layer 222, and the source 227s and the drain 227d may be formed in the same process and located in the same layer. As an example, a first contact hole CH1 exposing a portion of the source region 222s and a second contact hole CH2 exposing a portion of the drain region 222d may be each formed through the gate insulating layer 223, the intermediate dielectric layer 225, and the interlayer dielectric layer 226. The source electrode 227s may contact the upper surface of the source region 222s through the first contact hole CH1, and the drain electrode 227d may contact the upper surface of the drain region 222d through the second contact hole CH 2. The source electrode 227s and the drain electrode 227d may include a metal such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., an alloy thereof, a nitride thereof, a conductive metal oxide, a transparent conductive material, etc. As an example, the source 227s and the drain 227d may include a Ti/Ai/Ti metal stack structure.

A passivation layer 228 covers the source electrode 227s and the drain electrode 227d, and the passivation layer 228 may be disposed on the interlayer dielectric layer 226. The passivation layer 228 may include a stacked structure of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the passivation layer 228 may include silicon nitride.

The capacitor C may include first and second opposing plates CP1 and CP2, and may be used to maintain a node potential in the driving circuit. The first plate CP1 may be located between the gate insulating layer 223 and the interlayer dielectric layer 225, and may be located at the same layer as the gate electrode 224, and may be formed of the same material as the gate electrode 224. The second plate CP2 may be positioned between the intermediate dielectric layer 225 and the interlayer dielectric layer 226, and the second plate CP2 may include a metal such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), etc., an alloy thereof, a nitride thereof, a conductive metal oxide, a transparent conductive material, etc. As an example, the second plate CP2 may include molybdenum (Mo).

The trace L may be used to provide various signals, and for example, the trace L is located between the interlayer dielectric layer 226 and the passivation layer 228, and the trace L may be located on the same layer as the source 227s and the drain 227d and may be made of the same material as the source 227s and the drain 227 d. According to the type and requirement of the signal transmitted by the trace L, the trace L may be located on another film layer or a plurality of film layers, for example, the trace L and the gate 224 are located on the same film layer, or the trace L and the second electrode CP2 are located on the same film layer, and so on.

The planarizing layer 230 has a planarizing effect, and the drain electrode 227 of the thin film transistor TFT is electrically connected to the first electrode 51 of the light emitting element 50 through the connection electrode 229a, and the connection electrode 229b is electrically connected to the second electrode 52 of the light emitting element 50. The driving circuit layer 220 includes a driving circuit for driving the light emitting element 50 to emit light. As an example, the Light Emitting element 50 may be a Micro Light Emitting Diode (Micro LED), and the TFT is used for driving the Light Emitting element 50 to emit Light for Display.

As described above, in conjunction with fig. 3 and 5, each of the gate insulating layer 223, the intermediate dielectric layer 225, the interlayer dielectric layer 226 and the passivation layer 228 may be an insulating layer in the driving circuit layer 220 of the display panel 200, and since a portion of the insulating layer includes the opening V, and a corresponding region thereof is a light-transmitting region or a transparent region that may include the display panel 200, there is light leakage in a sidewall region of the opening V. The present embodiment covers the surface of the planarization layer 310 on the side away from the substrate 210 and the passivation layer 228b at the side wall of the opening V by extending any one of the gate insulating layer 223, the intermediate dielectric layer 225, the interlayer dielectric layer 226 and the passivation layer 228 to cover the side wall of the opening V, such as the passivation layer 228 to cover the surface of the interlayer dielectric layer 226 on the side away from the substrate 210 and the side wall of the gate insulating layer 223, the intermediate dielectric layer 225 and the interlayer dielectric layer 226 at the opening V in fig. 3; as shown in fig. 5, the interlayer dielectric layer 226 covers the surface of the intermediate dielectric layer 225 away from the substrate 210 and the sidewalls of the gate insulating layer 223 and the intermediate dielectric layer 225 extending to cover the opening V, the light shielding layer 40 covers the surface of the planarization layer 310 away from the substrate 210 and the interlayer dielectric layer 226b extending to cover the sidewall of the opening V, the light shielding layer 40 extends to the sterilization layer covering the sidewall of the opening V by increasing the coverage area of one insulating layer in the driving circuit layer 220, the insulating layer on the sidewall of the opening V can increase the adhesion between the light shielding layer 40 and the sidewall V, prevent the light shielding layer 40 from falling off, and ensure the stability of the structure of the light shielding layer 40.

The light shielding layer 40 includes a light absorbing material, and may be used for shielding light, for example, the light shielding layer 40 includes a black pigment. As an example, the light shielding layer 40 may be a black photoresist. On one hand, the light shielding layer 40 can greatly reduce the reflectivity of the metal components in the driving circuit layer 220 to the light inside the display panel; on the other hand, the light-shielding layer 40 can also reduce the influence of the external transmission light from the opening V on the performance of the thin film transistor TFT in the driving circuit layer 220, thereby reducing the problem of light leakage; on the other hand, the light-shielding layer 40 can absorb the light emitted downward from the light-emitting element 50, and prevent the light from being reflected to affect the display effect.

It should be noted that the display panel further includes other film layers, such as an encapsulation layer, etc., which cooperate to realize normal display of the display panel, and are not listed here.

To sum up, according to the display panel provided by the embodiment of the present invention, the first insulating layer of the plurality of insulating layers in the driving circuit layer of the display panel covers the opening sidewall, the light shielding layer extends to the opening sidewall and covers the first insulating layer at the opening sidewall, and the adhesion between the light shielding layer and the driving circuit layer is increased by the first insulating layer at the opening sidewall, so that the light shielding layer is prevented from falling off, the light shielding property of the light shielding layer is ensured, the problem of light leakage of the thin film transistor TFT of the driving circuit layer is solved, the flash when the display panel is turned on is avoided, and the display effect of the display panel is improved.

In a possible implementation manner, as shown in fig. 3 to fig. 5, the display panel 200 according to the embodiment of the invention includes a display area AA and a non-display area NA, wherein the display area AA surrounds at least a portion of the non-display area NA; the non-display area NA includes an opening V; the display area AA includes an active layer 222, a first insulating layer 30, and a plurality of light emitting elements 50 sequentially positioned at one side of the substrate base 210; the first insulating layer 30 includes a first sub-insulating portion 30a and a second sub-insulating portion 30b, and a plane of the first sub-insulating portion 30a is parallel to a first plane (XOY plane); the second sub-insulating part 30b covers at least a part of the sidewall of a portion of the film layer between the first sub-insulating part 30a and the substrate base plate 210; the light-shielding layer 40 includes a first light-shielding portion 40a and a second light-shielding portion 40b; the first light shielding portion 40a is located between the active layer 222 and the light emitting element 50; along a first direction (shown as a Z direction in the figure), the first light shielding portion 40a projects the cover active layer 222; the second light-shielding portion 40b covers the second sub-insulating portion 30b; the first plane (XOY plane) is parallel to the plane of the substrate 210, and the first direction (shown as Z direction in the figure) is the thickness direction of the display panel.

Specifically, for example, the Micro LED display panel is taken as an example, the display panel 200 includes a display area AA and a non-display area NA, the display area AA is used for normally displaying images, the thin film transistor TFT and the light emitting element 50 are both located in the display area AA, as shown in fig. 2, the display area AA can surround the non-display area NA, the non-display area NA is a transparent area V, and if the display area AA is multiplexed as a light sensing element setting area, devices such as an image sensor and a fingerprint sensor can be set, external ambient light penetrates through the transparent area V and enters the inside of the display panel 200, so as to achieve light reception of the devices such as the image sensor and the fingerprint sensor.

In order to prevent a part of the display light emitted from the light emitting element 50 or the ambient light from reaching the active layer 222 of the thin film transistor TFT to cause light leakage of the thin film transistor TFT, the first insulating layer 30 is prepared by evaporation or physical vapor deposition, the first insulating layer 30 is one of the multiple insulating layers in the driving circuit layer 220, and the passivation layer 228 is taken as the first insulating layer 30 for example. By extending the passivation layer 228 to cover the sidewalls of the non-display area NA, the first sub insulating portion 30a covers the interlayer dielectric layer 226, the source electrode 227s, and the drain electrode 227d, and the second sub insulating portion 30b covers the sidewalls of the gate insulating layer 223, the interlayer dielectric layer 225, and the interlayer dielectric layer 226; a light shielding layer 40 is arranged between the driving circuit layer 220 and the plurality of light-emitting elements 50 and on the side wall of the non-display area NA by adopting a patterning process, and the projection of the first light shielding portion 40a on the plane of the substrate 210 covers each thin film transistor TFT so as to prevent part of display light emitted by the light-emitting elements 50 from passing through the display panel 200 to reach the active area 222 of the thin film transistor TFT; the second light shielding part 40b is arranged to cover the side wall of the non-display area NA and is in contact with the second sub-insulating part 30b, and the second sub-insulating part 30b is of a stacked structure formed by one or more of inorganic materials such as silicon oxide, silicon nitride and silicon oxynitride, so that the adhesion between the second light shielding part 40b and the second sub-insulating part 30b is improved, the structural stability and the light shielding effect of the light shielding layer 40 are ensured, the light effect of the thin film transistor TFT is avoided, and the visual imaging effect of the display panel is improved. The light shielding layer 40 may be prepared in the same layer by using an existing film process, or may be prepared by adding a film process, which is not limited herein.

It should be noted that "patterning" herein refers to an incomplete structure, i.e., a structure formed by first forming an entire layer of material and then etching a specific shape during a manufacturing process.

Fig. 6 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. In a possible implementation manner, referring to fig. 2 and fig. 6, another display panel provided by the embodiment of the invention further includes an adhesion layer 222e, where the adhesion layer 222e is in the same layer as the active layer 222 and extends from the display area AA to a part of the non-display area NA; the second sub-insulating part 30b covers a sidewall of the film layer between the first sub-insulating part 30a and the adhesive layer 222 e; the second light-shielding portion 40b is in contact with the surface of the adhesion layer 222e on the side away from the base substrate 210.

Specifically, since the surface of the underlying substrate 210 is generally smooth, if the light shielding layer 40 directly contacts the underlying substrate 210, the contact surface is easily peeled off. And a patterning preparation process is also adopted, and when the active layer 222 is prepared, the adhesion layer 222e is prepared on the same layer, so that the structure arrangement does not need to increase a film layer preparation process. The adhesion layer 222e is disposed at the boundary between the display area AA and the non-display area NA, and extends from the display area AA to a part of the non-display area NA, that is, the projection of the adhesion layer 222e overlaps with the substrate 210 of the non-display area NA along the direction Z in the figure. Taking the passivation layer 228 as the first insulating layer 30 as an example, the second sub-insulating portion 30b is disposed to cover the sidewall of the film layer between the first sub-insulating portion 30a and the adhesion layer 222e, and the second light-shielding portion 40b extends along the Z direction in the figure to cover the surface of the second light-shielding portion 40b to the surface of the adhesion layer 222e on the side away from the substrate 210. The adhesion of the surfaces of the second light shielding part 40b and the adhesion layer 222e is improved by adding the adhesion layer 222e in the non-display area NA, so that the structural stability of the light shielding layer 40 is ensured; meanwhile, the adhesion layer 222e and the active layer 222 are on the same layer, and the light shielding layer 40 is in contact with the adhesion layer 222e, so that the thin film transistor TFT of the driving circuit layer 220 can be effectively wrapped, external ambient light incident along the non-display area NA is blocked, light leakage current of the thin film transistor TFT is reduced, the problem of flash-out when the display panel is lighted is avoided, and the display effect of the display panel is improved.

Fig. 7 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. In a possible implementation manner, as shown in fig. 2 and fig. 7, in another display panel according to an embodiment of the present invention, the second sub-insulating portion 30b of the display panel covers a sidewall of the film layer between the first sub-insulating portion 30a and the substrate 210, and extends to the surface of the substrate 210 in the non-display area NA; along the first direction (shown as the Z direction in the figure), the second sub-insulating part 30b projects a region overlapping with the substrate base plate 210 as a third sub-insulating part 30c; the second light shielding portion 40b is in contact with the surface of the third sub-insulating portion 30c on the side away from the base substrate 210.

Specifically, as shown in fig. 7, in order to avoid the light-shielding layer 40 directly contacting the substrate 210, the second sub-insulating portion 30b may also extend to a surface of the substrate 210 in the non-display area NA for a distance, the second sub-insulating portion 30b covers a film sidewall between the first sub-insulating portion 30a and the substrate 210 and a partial surface of the substrate 210 in the non-display area NA, and the second light-shielding portion 40b extends to cover a sidewall of the second sub-insulating portion 30b along the Z direction in the drawing to stop a surface of the third sub-insulating portion 30c away from the substrate 210. By adding the third sub-insulating portion 30c, the second light-shielding portion 40b can be prevented from directly contacting the substrate 210, which is beneficial to improving the adhesion of the second light-shielding portion 40b and preventing the light-shielding layer 40 from falling off; by extending the area of the second sub-insulating portion 30b to the substrate 210, the second light-shielding portion 40b can sink to the film layer where the active layer 222 is located, so as to wrap the thin film transistor TFT of the driving circuit layer 220, and block the external ambient light incident along the non-display area NA, thereby reducing the light leakage current of the thin film transistor TFT, avoiding the flash problem when the display panel is lit, and improving the display effect of the display panel.

Fig. 8 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. In a possible implementation manner, referring to fig. 2 and fig. 8, on the basis of the above embodiment, an embodiment of the present invention further provides another display panel, in which the substrate 210 of the display panel 200 includes a first groove V1, the first groove V1 is located on a side surface of the substrate 210 of the non-display area NA, which is close to the light-shielding layer 40; the third sub-insulating part 30c is located within the first groove V1.

Specifically, in order to further improve the wrapping of the light shielding layer 40 on the active layer 222 and the adhesion of the light shielding layer 40 to the substrate 210, a groove may be dug on the surface of the substrate 210 in the non-display area NA, the surface being close to the light shielding layer 40. The substrate 210 on which the first groove V1 is disposed in the non-display area NA is disposed on a side surface close to the light-shielding layer 40, and the depth of the first groove V1 may be several micrometers, for example. The first groove V1 of the surface of the substrate 210 where the second sub insulating portion 30b extends to the non-display area NA in the Z direction in the drawing is cut off, and the second light shielding portion 40b extends to cover the sidewall of the second light shielding portion 40b in the Z direction in the drawing to cut off the surface of the side of the third sub insulating portion 30c away from the substrate 210. The grooves are dug on the surface of the substrate base plate 210, and the third sub-insulating part 30c is cut off in the first groove V1, so that the adhesive force between the third sub-insulating part 30c and the substrate base plate 210 is improved, the second shading part 40b is prevented from falling off, and the stable structure of the shading layer 40 is ensured; meanwhile, due to the grooving, the second shading part 40b can be further sunk to the position below the film layer where the active layer 222 is located, the shading layer can completely wrap the thin film transistor TFT of the driving circuit layer 220, and the effects of blocking external environment light incident along the non-display area NA and reducing light leakage of the thin film transistor TFT are achieved.

Optionally, with continued reference to fig. 8, the surface of the first groove V1 is a rough surface. So as to improve the adhesion between the third sub-insulating portion 30c and the substrate base plate 210 and prevent the film layer from being separated.

FIG. 9 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2; fig. 10 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. In a possible implementation manner, with reference to fig. 6 to fig. 10, on the basis of the foregoing embodiments, the substrate base plate 210 of the display panel further provided in the embodiment of the present invention includes a plurality of second grooves V2; the second grooves V2 are located on a surface of the substrate 210 away from the active layer 222; along the first direction (shown as the Z direction in the figure), a projection of the area where the plurality of second grooves V2 are located covers the active layer 222.

Specifically, the roughening treatment is performed on the position of the TFT device on the lower glass surface of the substrate 210, for example, a plurality of second grooves V2 with the same shape and different size are formed, the shape of the second grooves V2 may be hemispherical, saw-toothed, square wave, etc., and there is no limitation here, and by providing a plurality of grooves below the TFT active layer 22 of the driving circuit layer 220, it is beneficial to improve the emission of light from the light emitting element 50 to the lower surface of the substrate 220, and it is avoided that light is totally reflected to the channel of the TFT on the surface of the substrate 210, thereby reducing light leakage.

On the basis of the above embodiments, as shown in fig. 3 to fig. 10, the display panel 200 further includes a protective layer 41, and the protective layer 41 covers the light shielding layer 40.

Specifically, the protective layer 41 is provided so as to cover the light-shielding layer 40 and to contact the light-shielding layer 40. The protective layer 41 may be a stacked structure of one or more of a material resistant to the stripping chemical, an inorganic layer, and an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride. And is used for protecting the light shielding layer 40 to avoid the problems of fading failure, film layer separation and the like of the light shielding layer 40.

It should be noted that, in fig. 6-10, the passivation layer 228 is taken as an example of the first insulating layer 30, and in other embodiments, other insulating layers in the driving circuit layer 220 may also cover a sidewall between the driving circuit layer and the substrate 210 to achieve the purpose of increasing the adhesion of the light shielding layer 40, which is not shown here.

Wherein, due to over-etching of the connection electrode 229, the protection layer 41, etc., the light shielding layer 40 material between the two electrodes of the light emitting device 50 sinks as a whole, the lower film interface thereof is between 230, and the upper film interface is lower than the upper surface of the periphery 41 of the light emitting device 50, as shown in fig. 3, 5-10; alternatively, the light-shielding layer 40 between the two electrodes of the light-emitting element 50 is removed and only the protective layer 41 is covered, as shown in fig. 4.

FIG. 11 is a schematic cross-sectional view of another display panel along direction AA' of FIG. 2; fig. 12 is a schematic cross-sectional view of another display panel along direction AA' in fig. 2. Based on the above embodiment, with reference to fig. 2, 11 and 12, taking the display panel 200 as an OLED display panel as an example, the light shielding layer 40 of the display panel 200 includes a pixel defining layer, the pixel defining layer includes a plurality of pixel openings, and the light emitting elements 50 are located in the pixel openings; along a first direction (shown as the Z direction in the figure), the light shielding layer 40 projects around the light emitting element 50.

Specifically, in fig. 11 and 12, taking the passivation layer 228 as the first insulating layer 30 as an example, when a pixel defining layer of the OLED display panel is prepared, a black light absorbing material is used or a light absorbing material is doped in the pixel defining layer, so that the black light absorbing material surrounds the light emitting element 50, extends along the Z direction in the figure, covers the sidewall between the pixel defining layer and the substrate 210, and covers the second sub-insulating layer 30b, so as to wrap the thin film transistor TFT in the driving circuit layer 220, thereby preventing light from entering the display area AA and reducing light leakage current of the thin film transistor TFT.

As shown in fig. 3 to 12, the display panel 200 further includes an encapsulation layer 60, the encapsulation layer 60 may include an encapsulation adhesive 61 and a cover plate 62, the encapsulation adhesive 61 covers the substrate 210 and the driving circuit layer 220 for encapsulating the light emitting device 300, and the encapsulation adhesive 61 covers a side surface of the light emitting device 50, or covers an upper surface of the light emitting device 50. The encapsulation layer 60 of the display panel further includes an adhesive layer 63, and the adhesive layer 63 is located between the encapsulation adhesive 61 and the cover plate 62.

Based on the same inventive concept, the embodiment of the invention also provides a display device. Fig. 13 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 13, the display device includes any one of the display panels provided in the foregoing embodiments. Illustratively, as shown in fig. 13, the display device 300 includes a display panel 200. Therefore, the display device also has the advantages of the display panel in the above embodiments, and the same points can be understood by referring to the above explanation of the display panel, which is not repeated herein.

The display device 300 provided in the embodiment of the present invention may be a mobile phone shown in fig. 13, and may also be any electronic product with a display function, including but not limited to the following categories: the display device includes a television, a notebook computer, a desktop display, a tablet computer, a digital camera, an intelligent bracelet, intelligent glasses, a vehicle-mounted display, industrial control equipment, a medical display screen, a touch interaction terminal and the like, and the embodiment of the invention is not limited to this.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel is characterized by comprising a substrate, a driving circuit layer and a light shielding layer, wherein the driving circuit layer and the light shielding layer are sequentially positioned on one side of the substrate;

2. The display panel according to claim 1, comprising a display area and a non-display area, the display area surrounding at least a part of the non-display area; the non-display area includes the opening;

the display area comprises an active layer, a first insulating layer and a plurality of light emitting elements which are sequentially positioned on one side of the substrate base plate; the first insulating layer comprises a first sub-insulating part and a second sub-insulating part, and the plane of the first sub-insulating part is parallel to a first plane; the second sub-insulating part covers at least part of the side wall of part of the film layer between the first sub-insulating part and the substrate base plate;

the light shielding layer comprises a first light shielding part and a second light shielding part; the film layer where the first shading part is located between the active layer and the light-emitting element; along a first direction, the first shading part projects and covers the active layer; the second light shielding part covers the second sub-insulating part;

the first plane is parallel to the plane where the substrate base plate is located, and the first direction is the thickness direction of the display panel.

3. The display panel according to claim 1, wherein the area corresponding to the opening is a transparent area or a light-transmitting area of the display panel.

4. The display panel according to claim 2, wherein the display panel further comprises an adhesive layer, the adhesive layer is in the same layer as the active layer and extends from the display region to a part of the non-display region;

the second sub-insulating part covers a sidewall of the film layer between the first sub-insulating part and the adhesive layer; the second light shielding part is in contact with the surface of the adhesion layer on the side far away from the substrate base plate.

5. The display panel according to claim 2, wherein the second sub-insulating portion covers a sidewall of the film layer between the first sub-insulating portion and the substrate base plate and extends to a substrate base plate surface of the non-display region;

along the first direction, a region where the projection of the second sub-insulation part overlaps with the substrate base plate is a third sub-insulation part; the second light shielding part is in contact with the surface of one side, away from the substrate, of the third sub-insulating part.

6. The display panel according to claim 5, wherein the substrate base plate comprises a first groove on a side surface of the substrate base plate of the non-display region adjacent to the light-shielding layer; the third sub-insulating part is located in the first groove.

7. The display panel according to claim 6, wherein a surface of the first groove is a rough surface.

8. The display panel according to claim 2, wherein the substrate base plate includes a plurality of second grooves; the second grooves are positioned on the surface of one side, away from the active layer, of the substrate base plate;

along the first direction, the projection of the area where the second grooves are located covers the active layer.

9. The display panel according to claim 2, wherein the light shielding layer comprises a pixel defining layer including a plurality of pixel openings in which the light emitting elements are located;

along the first direction, the light shielding layer projection surrounds the light emitting element projection.

10. The display panel of claim 9, wherein the pixel defining layer comprises a black light absorbing material.

11. The display panel according to claim 1, further comprising a protective layer covering the light-shielding layer.

12. A display device comprising the display panel according to any one of claims 1 to 11.