CN115911795A - Substrate integrated artificial surface plasmon multi-passband filter - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 230000005540 biological transmission Effects 0.000 claims abstract description 22
- 238000001465 metallisation Methods 0.000 claims description 6
- 238000003780 insertion Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract description 2
- 230000005764 inhibitory process Effects 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses a substrate integrated artificial surface plasmon multi-passband filter, which comprises a substrate and a substrate integrated waveguide above the substrate, wherein the substrate integrated waveguide comprises metal layers arranged at two sides of the substrate, at least one metal layer at one side is provided with an interdigital metal slotted structure array, the interdigital metal slotted structure array comprises an interdigital metal slotted structure in the middle and a plurality of interdigital metal slotted structures which are symmetrically arranged at intervals at two sides of the interdigital metal slotted structure, metalized through holes are arranged at the edges of two sides of the metal layer, the interdigital metal slotted structure is arranged in the middle of two rows of the metalized through holes, the arrangement direction of the interdigital metal slotted structure is parallel to the arrangement direction of the metalized through holes, the interdigital metal slotted structure comprises a trunk and branches, and the branches are symmetrically arranged at intervals at two sides of the trunk. The invention has simple design, small size, good transmission and filtering functions of the artificial surface plasmon electromagnetic wave, low transmission insertion loss in a pass band and strong inhibition performance in a stop band, and has important application prospect in microwave millimeter wave and terahertz circuits, devices and systems.
Description
Technical Field
The invention relates to the technical field of waveguide and transmission lines, in particular to a substrate integrated artificial surface plasmon multi-passband filter.
Background
With the rapid development of high-speed wireless communication such as fifth generation (5G) mobile communication, microwave frequency resources are becoming more and more scarce, how to improve the spectrum utilization and eliminate external signal interference is one of the problems to be solved, and in various wireless communication systems, high requirements are put forward on a band-pass filter (BPF) having low band transmission loss and high band rejection. The traditional microstrip line structure has the advantages of small volume, compact structure, light weight, low manufacturing cost and the like, but the microstrip line has serious electromagnetic wave leakage and radiation in higher frequency, especially millimeter wave frequency band, and the transmission loss of the circuit is large. The metal waveguide has the advantages of low insertion loss, low radiation, high quality factor and the like in a high-frequency band, but has overlarge volume, difficult processing and high manufacturing cost. Substrate Integrated Waveguide (SIW) is a dielectric-filled "composite" planar Waveguide formed by arranging two rows of metal vias connecting upper and lower metal plates, has the advantages of low insertion loss, small volume, easy integration, etc., and has been widely used in various microwave and millimeter wave devices and components. The main mode of electromagnetic wave propagation is TE10 mode, the field distribution is similar to rectangular waveguide, but flexibility and integration are greatly improved, and at the same time, the planar characteristic of the substrate integrated waveguide makes it possible to transfer with planar transmission line such as microstrip line or strip line, which is beneficial to miniaturization and integration of equipment.
Surface plasmons (SPPs) are optical surface waves excited by the interaction of photons and electrons at the metal/dielectric interface, with the advantage of sub-wavelength local near-field enhancement. However, since the plasmon frequency of the noble metal is generally located in the optical frequency band, the surface plasmon cannot be directly excited in a low frequency band such as microwave and terahertz. In 2004, the article by Pendry et al in Science, "mixing Surface plasmons with structured surfaces" proposed the concept of artificial Surface plasmons (SSPPs). It was first demonstrated that structured metal surfaces can be SSPPs, which have similar behavior as SPP. The Conformal artificial surface plasmon waveguide structure of the periodic comb-shaped ultrathin metal layer is researched by Procedents of the National Academy of Sciences of the United States of America, conformal surface plasmon polariton on ultra-thin and flexible waveguides in 2013, and the transformation of the artificial surface plasmon waveguide from a three-dimensional structure to a planar structure is realized. Compatibility with planar circuits and systems is achieved. In recent years, planar artificial surface plasmon filters have attracted much attention because of their important applications in microwave and terahertz integrated circuits and systems. Although a single-pass band filter with good filter response can be designed by combining the high-pass filter characteristics of SIW and the low-pass filter characteristics of SSPPs, developing a high-performance multi-pass band SIW-SSPPs filter with low insertion loss and high level of band rejection remains a significant challenge currently facing.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a substrate integrated artificial surface plasmon multi-passband filter which has excellent multi-passband transmission characteristics, good stopband suppression level and strong constraint performance in microwave and terahertz wave bands to solve the problems.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the utility model provides a substrate integrated artificial surface plasmon multi-passband filter, including the substrate and the integrated waveguide of substrate above it, the integrated waveguide of substrate is including the metal level of locating the base plate both sides, at least one of them side metal level is equipped with interdigital metal fluting structure array, interdigital metal fluting structure array includes interdigital metal fluting structure in the middle of and a plurality of interdigital metal fluting structures of both sides interval symmetry arrangement, the both sides edge of metal level is equipped with the metallization through-hole, interdigital metal fluting structure establishes in the middle of two rows of metallization through-holes, and its direction of arrangement is parallel with the direction of arrangement of metallization through-hole, interdigital metal fluting structure includes trunk and minor matters, the minor matters is symmetrical interval arrangement in trunk both sides, from the interdigital metal fluting structure of most lateral side to the interdigital metal fluting structure distribution in the middle, the length of its minor matters is the gradient and increases.
Preferably, the trunk is perpendicular to the arrangement direction of the metalized through holes, and the extension direction of the branch is parallel to the arrangement direction of the metalized through holes.
Preferably, the length of the branches ranges from 0.1mm to 2.3mm, the distance between two adjacent branches ranges from 0.1mm to 0.3mm, the distance between the centers of two rows of the metalized through holes is an effective width, and the range of the effective width is 9mm to 14.55mm.
Preferably, microstrip transmission lines are arranged at two ends of the substrate integrated waveguide, each microstrip transmission line comprises a rectangular structure and a conical structure, the length direction of each rectangular structure is parallel to the arrangement direction of the corresponding metallized through holes, each conical structure is arranged between each rectangular structure and the corresponding substrate integrated waveguide, the width of the connection position of each conical structure and each rectangular structure is the same, and the width of the connection position of each conical structure and each conical structure is smaller than the width of the connection side of the corresponding substrate integrated waveguide.
Preferably, the length of the tapered structure is 5.79mm, and the width W of the connection side of the tapered structure and the substrate integrated waveguide t 3.27mm, width W of the side where the tapered structure is connected with the rectangular structure 1 Is 1.5mm.
Preferably, the substrate integrated waveguide further comprises a plurality of first resonance rings having openings and a second resonance ring disposed antisymmetrically with the first resonance rings, and the first resonance rings and the second resonance rings are disposed in a slotted form on both sides of the metal layer, respectively.
Preferably, the shapes of the first resonance ring and the second resonance ring include a C-shape, a circular shape, an elliptical shape, or a spiral shape.
Preferably, the first resonance ring and the second resonance ring are C-shaped open resonance rings, the length and width of the first resonance ring and the second resonance ring range from 2mm to 3mm, and the opening size ranges from 0.1mm to 1 mm.
Preferably, the opening sizes of the C-shaped opening resonance rings are the same, the length of the side of the C-shaped opening resonance ring is 2.6mm, the width of the side is 0.2mm, and the opening size C is 0.5mm.
Preferably, the resonant ring has a C-shaped openingThe openings have different sizes, wherein the opening size C of one C-shaped opening resonant ring 1 Is 1mm, and the opening size C of another C-shaped opening resonance ring 2 Is 0.3mm.
Compared with the prior art, the invention has the beneficial effects that:
(1) The substrate integrated artificial surface plasmon multi-pass band filter provided by the invention transmits artificial surface plasmon electromagnetic waves through the interdigital metal slotted structure which is periodically arranged on the substrate integrated waveguide, and the asymptotic frequency of a dispersion curve is lower and the constraint performance to an electromagnetic field is stronger.
(2) The substrate integrated artificial surface plasmon multi-passband filter provided by the invention adopts the flexible substrate, and can be used for conformally transmitting microwave and terahertz artificial surface plasmon electromagnetic waves through bending deformation.
(3) The substrate integrated artificial surface plasmon multi-passband filter provided by the invention has bandpass characteristics, has multi-passband capability and has steeper rising edge and falling edge, the passband range can be adjusted by controlling the lengths of the branches of the interdigital metal slotted structure and the effective width of the substrate integrated waveguide, and the number and the positions of the passbands are controlled by controlling the length, the width and the opening size of the antisymmetric resonant ring, so that the filter with single passband, double passbands and three passbands is realized.
(4) The substrate integrated artificial surface plasmon multi-passband filter provided by the invention has excellent performance, wherein S11 is lower than-10dB, S21 is higher than-1 dB in a passband, and S21 is lower than-15 dB in a stopband, and the performance requirements of a modern communication system are met. .
(5) The transmission characteristic of the substrate integrated artificial surface plasmon multi-pass band filter provided by the invention mainly depends on the length of the branch of the interdigital metal slotted structure, the effective width of the substrate integrated waveguide and the corresponding sensitive parameters of the resonance ring, the artificial design is convenient and flexible, the unit and the branch structure size are amplified and reduced through scale transformation, and the filter can be used for the transmission of the artificial surface plasmon electromagnetic wave of microwave, millimeter wave or terahertz wave band.
(6) The substrate integrated artificial surface plasmon multi-pass band filter belongs to a flat structure, and can be used for designing various microwave millimeter wave even terahertz power dividers, couplers, antennas, amplifiers, mixers and other passive and active circuits, devices, even components or systems due to the perfect matching of the substrate integrated waveguide and the microstrip transmission line.
Drawings
The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and together with the description serve to explain the principles of the invention. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description.
Fig. 1 is a schematic structural diagram of a substrate-integrated artificial surface plasmon multi-passband filter according to a first embodiment of the present application;
fig. 2 is a schematic diagram of a cell structure of a substrate-integrated artificial surface plasmon multi-passband filter according to a first embodiment of the present application;
fig. 3 is a dispersion curve diagram of a unit structure of a substrate-integrated artificial surface plasmon multi-passband filter according to a first embodiment of the present application;
fig. 4 is a graph of S-parameter curve of a substrate integrated artificial surface plasmon multi-passband filter according to a first embodiment of the present application;
fig. 5 is a schematic structural diagram of a substrate-integrated artificial surface plasmon multi-passband filter according to a second embodiment of the present application;
fig. 6 is a S-parameter graph of a substrate-integrated artificial surface plasmon multi-passband filter according to a second embodiment of the present application;
fig. 7 is a schematic structural diagram of a substrate-integrated artificial surface plasmon multi-passband filter according to a third embodiment of the present application;
fig. 8 is a graph of S-parameter of a substrate-integrated artificial surface plasmon multi-passband filter according to a third embodiment of the present application;
reference numerals: 1. a substrate; 2. a substrate integrated waveguide; 21. an interdigital metal slotted structure; 22. metallizing the through-hole; 23. a C-shaped open resonant ring; 3. a microstrip transmission line.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the related invention are shown in the drawings.
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Example one
Referring to fig. 1, an embodiment of the present invention provides a substrate integrated artificial surface plasmon multi-passband filter, including a substrate 1 and a substrate integrated waveguide 2 thereon, where a material of the substrate 1 is Rogers RT5880, a dielectric constant is 2.2, a thickness is 0.508mm, and a transmission loss angle is 0.0009. The substrate integrated waveguide 2 comprises metal layers arranged on two sides of the substrate 1, wherein at least one metal layer is provided with an interdigital metal slotted structure array, and the interdigital metal slotted structure array comprises an interdigital metal slotted structure 21 in the middle and a plurality of interdigital metal slotted structures 21 which are symmetrically arranged at intervals on two sides of the interdigital metal slotted structure 21. The interdigital metal slotted structure 21 is a branched structure formed by slotting on the surface of the metal layer of the substrate integrated waveguide 2 in an interdigital shape. By way of example, the substrate integrated waveguide 2 of the embodiment of the present application has 7 interdigital metal slotted structures 21, and with the interdigital metal slotted structure 21 in the middle as a symmetry axis, a plurality of interdigital metal slotted structures 21 on two sides are symmetrically distributed, and each interdigital metal slotted structure 21 has 5 branches which are symmetrically distributed. In other embodiments, the interdigital shape may be a symmetrical distribution or a staggered distribution of branches, the number of branches of the interdigital is not fixed, and may be more or less and may be distributed on a single side of the substrate integrated waveguide 2 or distributed on two sides of the substrate integrated waveguide 2 in a symmetrical, anti-symmetrical, offset-symmetrical manner, or the like. The substrate integrated artificial surface plasmon multi-passband filter provided by the embodiment of the application is composed of a substrate integrated waveguide 2, an artificially designed periodic interdigital metal slotted structure 21 on the substrate integrated waveguide and an antisymmetric resonant ring introduced in a defect topographic form, and is used for realizing multi-passband filtering of microwave and terahertz artificial surface plasmon electromagnetic waves.
The embodiment of the present application is described by taking an example in which a single surface of the substrate integrated waveguide 2 is provided with an array of interdigital metal slotted structures. Specifically, the edges of the two sides of the metal layer are provided with metalized through holes 22, and the material of the metal layer and the metalized through holes 22 is copper. The interdigital metal slotted structure 21 is arranged in the middle of the two rows of the metalized through holes 22, the arrangement direction of the interdigital metal slotted structure is parallel to the arrangement direction of the metalized through holes 22, the interdigital metal slotted structure 21 comprises a trunk and branch sections, the branch sections are symmetrically arranged at intervals on two sides of the trunk, the branch sections are distributed from the interdigital metal slotted structure 21 on the most lateral side to the interdigital metal slotted structure 21 in the middle, the length of the branch sections is increased in a gradient mode, and the distance between every two adjacent interdigital metal slotted structures 21 is gradually reduced. Specifically, the trunk is perpendicular to the arrangement direction of the metalized through holes 22, and the extending direction of the branches is parallel to the arrangement direction of the metalized through holes 22. The length range of the branches is 0.1-2.3 mm, the distance between two adjacent branches is 0.1-0.3 mm, the distance between the centers of two rows of the metalized through holes 22 is effective width, and the range of the effective width is 9-14.55 mm.
In one embodiment, referring to fig. 2, the unit cell size of the interdigital metal slotted structure 21 is as follows: the diameter d of each metalized through hole 22 is 0.6mm, the distance x between the middles of two adjacent metalized through holes 22 is 1mm, the width s of branches is 0.2mm, the width g of a trunk is 0.1mm, the period width p of a unit structure on the substrate integrated waveguide 2 is 5mm, the width W of a filter is 18mm, h is increased from 0mm to 2.3mm, the effective width a of the substrate integrated waveguide 2 is increased from 9mm to 14.55mm, and a dispersion curve obtained through simulation analysis is shown in fig. 3. The substrate integrated waveguide 2 has a high-pass characteristic, the artificial surface plasmon waveguide has a low-pass characteristic, the lower limit cut-off frequency and the upper limit cut-off frequency of the artificial surface plasmon waveguide are respectively determined by the effective width a of the substrate integrated waveguide 2 and the length h of the branch of the interdigital metal slotted structure 21, and a band-pass filter meeting the specific bandwidth requirement can be designed by adjusting the sizes of a and h, namely, the bandwidth of the filter is adjusted by changing the effective width a of the substrate integrated waveguide 2 and the length h of the branch of the interdigital metal slotted structure 21.
As shown in fig. 1, microstrip transmission lines are disposed at two ends of the substrate integrated waveguide 2, each microstrip transmission line includes a rectangular structure and a tapered structure, the length direction of the rectangular structure is parallel to the arrangement direction of the metalized through holes 22, the tapered structure is disposed between the rectangular structure and the substrate integrated waveguide 2, the width of the connection between the tapered structure and the rectangular structure is the same, and the width is smaller than the width of the connection side with the substrate integrated waveguide 2. That is, the filter can be divided into three parts, the left and right ends are microstrip transmission lines, and the middle is the substrate integrated waveguide 2 with the interdigital metal slotted structure 21. The filter has a symmetrical structure, the two ends of the filter are feed ends, and the width W of the connection side of the conical structure and the rectangular structure 1 Is 1.5mm, and port impedance of 50 omega is ensured. The electromagnetic wave is converted into the substrate integrated waveguide 2 from a microstrip line by adopting a conical structure, and the width W of the connecting side of the conical structure and the substrate integrated waveguide 2 t Is 3.27mm, and has a rectangular structure length L 1 Is 10mm, length L of the conical structure t Is 5.79mm, the impedance matching with the substrate integrated waveguide 2 is achieved. In order to realize wave vector matching, the lengths of the branches of the interdigital metal slotted structure 21 are distributed in a gradient and gradual increasing manner. As can be seen from the simulation and actual measurement results of FIG. 4, the band-pass range of the filter is 7.4GHz to 12.2GHz, S11 in the band-pass is lower than-12dB, and S21 is higher than-1 dB and has steeper rising edges and falling edges.
Example two
The second embodiment of the present application is different from the first embodiment in that the substrate integrated waveguide 2 further includes a plurality of first resonance rings having openings and a second resonance ring disposed opposite to the first resonance ring, and the first resonance ring and the second resonance ring are disposed on both sides of the metal layer in a slotted form, respectively. Specifically, the metal layer on one side of the substrate 1 is provided with an interdigital metal slotted structure array and a plurality of first resonant rings, and the metal layer on the other side of the substrate 1 is provided with a second resonant ring which is antisymmetric to the first resonant rings. The number of pass bands and the positions of the pass bands can be adjusted by changing the length and width of the C-shaped split resonant ring 23 or the size of the split, and the shape of the resonant ring is not limited to the C-shape mentioned in the embodiments of the present application, and may also be circular, elliptical, spiral, etc. Specifically, the length and width of the resonant ring range from 2mm to 3mm, and the size of the opening ranges from 0.1mm to 1 mm. The embodiment of the present application takes an antisymmetric C-shaped open resonator ring 23 as an example, and the upper and lower antisymmetric C-shaped open resonator rings 23 are formed by forming a defective-topography-type opening on the upper and lower metal layer surfaces of the substrate integrated waveguide 2.
As shown in fig. 5, an antisymmetric C-shaped split ring resonator 23 is introduced based on the first embodiment, so that an additional stop band is introduced into the original pass band to form a double pass band. The openings of the C-shaped open resonator rings 23 are the same size. Specifically, the lengths i and j of the sides of the C-shaped split ring 23 are both 2.6mm, the width k of the sides is 0.2mm, and the opening size C is 0.5mm. As can be seen from the simulation and actual measurement results of FIG. 6, the filter has two pass bands, the first pass band ranges from 7.4GHz to 9.05GHz, and the second pass band ranges from 10.01GHz to 12.5GHz. S11 in a pass band is lower than-12dB, and S21 is higher than-1 dB, so that the transmission performance is excellent.
EXAMPLE III
Referring to fig. 7, the third embodiment of the present application is different from the second embodiment in that the C-shaped split resonant ring 23 has a different split size. The design goal of multiple pass bands is achieved by varying the opening size of the two C-shaped split resonating rings 23, thereby introducing different stop bands. Opening size C of one of the C-shaped opening resonance rings 23 1 1mm, opening size C of another C-shaped opening resonance ring 23 2 Is 0.3mm. As can be seen from the simulation and actual measurement results of FIG. 8, the filter has three pass bands, the first pass band ranges from 7.4GHz to 8.8GHz, the second pass band ranges from 9.01GHz to 9.72GHz, and the third pass band ranges from 10.01GHz to 12.5GHz. S11 in a pass band is lower than-10dB, S21 in the pass band is higher than-1 dB, and the transmission performance is excellent.
The substrate integrated artificial surface plasmon multi-passband filter provided by the embodiment of the application can adjust the number of the passband of the filter and the position of the passband by changing the length and the width of the C-shaped opening resonant ring or the opening size, so as to realize the filter with single passband, double passband and three passbands; the sizes of the unit and the branch structure are amplified and reduced through scale conversion, and the device can be used for transmission of artificial surface plasmon electromagnetic waves in microwave, millimeter wave or terahertz wave bands.
While the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. The utility model provides an integrated artifical surface plasmon multi-passband filter of substrate, its characterized in that, the integrated waveguide of substrate including base plate and top, the integrated waveguide of substrate is including locating the metal layer of base plate both sides, at least one of them side metal layer is equipped with interdigital metal fluting structure array, interdigital metal fluting structure array includes a plurality of interdigital metal fluting structures of interdigital metal fluting structure and both sides interval symmetry range in the middle of middle, the both sides edge of metal layer is equipped with the metallization through-hole, interdigital metal fluting structure establishes two rows the centre of metallization through-hole to its arrangement direction with the arrangement direction of metallization through-hole is parallel, interdigital metal fluting structure includes trunk and minor matters, the minor matters is in the symmetrical interval arrangement in trunk both sides, from most side interdigital metal fluting structure to the centre interdigital metal fluting structure distributes, and the length of its minor matters is the gradient and increases.
2. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 1, wherein the trunk is perpendicular to the arrangement direction of the metalized through holes, and the extension direction of the branches is parallel to the arrangement direction of the metalized through holes.
3. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 1, wherein the length of the branches ranges from 0.1mm to 2.3mm, the distance between two adjacent branches ranges from 0.1mm to 0.3mm, the distance between the centers of two rows of the metalized through holes is an effective width, and the range of the effective width is from 9mm to 14.55mm.
4. The substrate integrated artificial surface plasmon multi-band-pass filter according to claim 1, wherein microstrip transmission lines are arranged at two ends of the substrate integrated waveguide, each microstrip transmission line comprises a rectangular structure and a tapered structure, the length direction of the rectangular structure is parallel to the arrangement direction of the metalized through holes, the tapered structure is arranged between the rectangular structure and the substrate integrated waveguide, the width of the connection part of the tapered structure and the rectangular structure is the same, and the width of the connection part of the tapered structure and the rectangular structure is smaller than the width of the connection part of the tapered structure and the substrate integrated waveguide.
5. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 4, wherein the length of the tapered structure is 5.79mm, and the width W of the connection side of the tapered structure and the substrate-integrated waveguide is t Is 3.27mm, and the width W of the connecting side of the conical structure and the rectangular structure 1 Is 1.5mm.
6. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 1, wherein the substrate-integrated waveguide further comprises a plurality of first resonance rings having openings and a second resonance ring arranged in anti-symmetry with the first resonance rings, and the first resonance rings and the second resonance rings are respectively arranged on both sides of the metal layer in a slotted form.
7. The substrate-integrated artificial surface plasmon multi-band pass filter of claim 6 wherein the shape of said first and second resonant rings comprises a C-shape, a circular shape, an elliptical shape, or a spiral shape.
8. The substrate-integrated artificial surface plasmon multi-band-pass filter according to claim 7, wherein the first and second resonance rings are C-shaped open resonance rings, the length and width ranges of the first and second resonance rings are between 2mm and 3mm, and the opening size ranges between 0.1mm and 1 mm.
9. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 8, wherein the opening sizes of the C-shaped open resonance rings are the same, the length of the side of the C-shaped open resonance ring is 2.6mm, the width of the side is 0.2mm, and the opening size C is 0.5mm.
10. The substrate-integrated artificial surface plasmon multi-passband filter according to claim 8, wherein the C-shaped open resonance rings have different opening sizes, wherein one of the C-shaped open resonance rings has an opening size C 1 1mm, opening size C of another C-shaped opening resonance ring 2 Is 0.3mm.
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