CN115911141A - Perovskite copper indium gallium selenide laminated battery tunneling composite layer and preparation method thereof - Google Patents

Perovskite copper indium gallium selenide laminated battery tunneling composite layer and preparation method thereof Download PDF

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CN115911141A
CN115911141A CN202211535447.XA CN202211535447A CN115911141A CN 115911141 A CN115911141 A CN 115911141A CN 202211535447 A CN202211535447 A CN 202211535447A CN 115911141 A CN115911141 A CN 115911141A
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perovskite
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王奇
李仁龙
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Taizhou Jinneng Photoelectric Co ltd
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Taizhou Jinneng Photoelectric Co ltd
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Abstract

The invention discloses a perovskite copper indium gallium selenide laminated cell tunneling composite layer and a preparation method thereof, wherein the tunneling composite layer comprises a tunneling composite layer body, and the tunneling composite layer body is arranged between a CIGS cell and a perovskite cell of the perovskite copper indium gallium selenide laminated cell; the tunneling composite layer body comprises an n-type layer, a first high-resistance layer, an n + type layer, a low-resistance layer, a p-type layer and an interface passivation layer which are sequentially arranged, wherein the n-type layer is connected with the CIGS battery to form a PN junction, the n + type layer forms a PN junction in gradient distribution, and the p-type layer is connected with the perovskite battery through the interface passivation layer to form a hole transmission layer of the perovskite battery. According to the invention, the low-resistance layer is arranged between the n + type layer and the p-type layer, so that the n + type layer and the p-type layer are prevented from forming an inverted junction; an interface passivation layer is arranged on the p-type layer; carrying out surface treatment on the surface of the n + -type layer to remove surface pollutants; the open-circuit voltage Voc and the fill factor FF of the laminated battery are integrally improved, the integral performance of the laminated battery is improved, and the conversion efficiency is improved.

Description

Perovskite copper indium gallium selenide laminated cell tunneling composite layer and preparation method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a perovskite copper indium gallium selenide laminated cell tunneling composite layer and a preparation method thereof.
Background
Solar energy is a clean, sustainable energy source. Solar cells can be further classified into: silicon solar cells, multi-component thin film solar cells, polymer multilayer modified electrode type solar cells, nanocrystal solar cells, organic solar cells and plastic solar cells.
Due to the wide energy distribution in the spectrum of sunlight, any existing material can only absorb photons with energy higher than the energy gap value of the material. And the single-section solar cell cannot break through 29.4% of the ultimate Shockley-Queisser (Shockley-Queisser) efficiency. In order to break through this extreme efficiency, tandem solar cell structures have been proposed that can break through the SQ limit, resulting in higher efficiencies.
The perovskite copper indium gallium selenide laminated battery comprises a copper indium gallium selenide bottom battery and a perovskite top battery, wherein the top battery and the bottom battery are connected through a tunneling composite layer; the tunneling composite layer of the existing perovskite copper indium gallium selenide laminated battery generally comprises an n-type layer, a high-resistance layer, an n + -type layer and a p-type layer; the existing tunneling composite layer has the following problems: 1. the n + type layer is directly contacted with the p-type layer, and an inverted junction may be formed between the n + type layer and the p-type layer, so that the performance of the battery is reduced; 2. the p-type layer is directly contacted and connected with the perovskite roof battery, so that leakage current exists, and the performance of the battery is influenced.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a perovskite copper indium gallium selenide laminated battery tunneling composite layer and a preparation method thereof, and solve the problems that the existing perovskite copper indium gallium selenide laminated battery tunneling composite layer may form a reverse junction and has leakage current to influence the battery performance.
The technical scheme adopted by the invention for solving the technical problems is to provide a perovskite copper indium gallium selenide laminated cell tunneling composite layer, which comprises a tunneling composite layer body, wherein the tunneling composite layer body is arranged between a CIGS cell and a perovskite cell of the perovskite copper indium gallium selenide laminated cell and is used for connecting the CIGS cell and the perovskite cell; the tunneling composite layer body comprises an n-type layer, a first high-resistance layer, an n + type layer, a low-resistance layer, a p-type layer and an interface passivation layer which are sequentially arranged, the n-type layer is connected with the CIGS battery to form a PN junction, the first high-resistance layer forms a passivation interface between the n-type layer and the n + type layer, the n + type layer forms a PN junction in gradient distribution, and the p-type layer is connected with the perovskite battery through the interface passivation layer to form a hole transmission layer of the perovskite battery.
Further, the n-type layer is a CdS layer, the first high-resistance layer is an i-ZnO layer, the n + type layer is an AZO layer or a BZO layer, and the low-resistance layer is an ITO layer; the p-type layer is a NiOx layer.
Further, a second high-resistance layer is arranged between the n + type layer and the low-resistance layer, and a passivation interface is formed between the n + type layer and the low-resistance layer; the second high-resistance layer is SnO 2 And (3) a layer.
Further, the interfacial passivation layer forms a passivated interface between the p-type layer and the perovskite cell; the interface passivation layer is a SAM layer.
Further, the connection surface of the n + type layer and the low resistance layer is subjected to surface treatment, and the surface treatment comprises etching and ultraviolet ozone treatment.
Further, the CIGS cell comprises a substrate layer, a back electrode layer and a photoelectric conversion layer which are arranged in sequence; the photoelectric conversion layer is connected with the n-type layer to form a PN junction; the perovskite battery comprises a perovskite layer, an electron transmission layer and a transparent conducting layer which are sequentially arranged; the p-type layer is connected with the perovskite layer through an interface passivation layer to form a hole transport layer of the perovskite battery.
The invention adopts another technical scheme to solve the technical problems and provides a preparation method of a perovskite copper indium gallium selenide laminated cell tunneling composite layer, which comprises the following steps: s1: sequentially depositing an n-type layer, a first high-resistance layer and an n + type layer on the CIGS cell; the n-type layer is a CdS layer, the first high-resistance layer is an i-ZnO layer, and the n + -type layer is an AZO layer or a BZO layer; s2: carrying out surface treatment on the n + type layer; s3: depositing a low-resistance layer, a p-type layer and an interface passivation layer on the n + type layer in sequence; the low-resistance layer is an ITO layer; the p-type layer is a NiOx layer; the interface passivation layer is a SAM layer.
Further, the step S1 includes: s11: depositing a CdS layer on the CIGS cell as an n-type layer in a chemical water area mode or an atomic layer deposition mode; s12: depositing an i-ZnO layer on the n-type layer by a magnetron sputtering mode or a metal organic chemical vapor deposition mode to serve as a first high-resistance layer; s13: and depositing an AZO layer or a BZO layer on the first high-resistance layer in a magnetron sputtering mode or a metal organic chemical vapor deposition mode to serve as an n + type layer.
Further, the step S2 includes: and etching the surface of the n + type layer by adopting hydrochloric acid: and adopting ultraviolet ozone to carry out surface smoothing treatment on the surface of the n + type layer after etching.
Further, before the step S3, the method further includes: depositing SnO on the n + type layer by means of atomic layer deposition 2 The layer is used as a second high-resistance layer; the step S3 includes: depositing an ITO layer as a low-resistance layer in a magnetron sputtering mode; and depositing a NiOx layer on the low-resistance layer in a magnetron sputtering mode to serve as a p-type layer, and depositing a SAM layer on the p-type layer in a slit coating mode to serve as an interface passivation layer.
Compared with the prior art, the invention has the following beneficial effects: the invention provides a perovskite copper indium gallium selenide laminated cell tunneling composite layer and a preparation method thereof.A low-resistance layer is arranged between an n + type layer and a p type layer to prevent the n + type layer and the p type layer from forming an inverse junction; arranging an interface passivation layer on the p-type layer to form a passivation interface; carrying out surface treatment on the surface of the n + -type layer to remove surface pollutants and improve the surface smoothness; a high resistance layer is added between the n + type layer and the low resistance layer to form a passivation interface so as to prevent leakage current; the open-circuit voltage Voc and the fill factor FF of the laminated battery are integrally improved, the integral performance of the laminated battery is improved, and the conversion efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite copper indium gallium selenide laminated battery and a tunneling composite layer in an embodiment of the invention;
fig. 2 is a flowchart of a method for preparing a tunneling composite layer of a perovskite copper indium gallium selenide laminated battery in an embodiment of the invention.
In the figure:
1. a tunneling composite layer body; 2. a base layer; 3. a back electrode layer; 4. a photoelectric conversion layer; 5. a perovskite layer; 6. an electron transport layer; 7. a transparent conductive layer; 100. an n-type layer; 101. a first high resistance layer; 102. an n + type layer; 103. a second high resistance layer; 104. a low resistance layer; 105. a p-type layer; 106. an interface passivation layer.
Detailed Description
The invention is further described below with reference to the figures and examples.
Fig. 1 is a schematic structural view of a tunneling composite layer of a perovskite copper indium gallium selenide laminated battery in an embodiment of the invention.
Referring to fig. 1, the tunneling composite layer of the perovskite copper indium gallium selenide laminated cell according to the embodiment of the invention includes a tunneling composite layer body 1, and the tunneling composite layer body is disposed between a CIGS cell and a perovskite cell of the perovskite copper indium gallium selenide laminated cell for connecting the CIGS cell and the perovskite cell; the tunneling composite layer body 1 comprises an n-type layer 100, a first high-resistance layer 101, an n + -type layer 102, a low-resistance layer 104, a p-type layer 105 and an interface passivation layer 106 which are sequentially arranged, wherein the n-type layer 100 is connected with the CIGS battery to form a PN junction, and the first high-resistance layer 101 forms a passivation interface between the n-type layer 100 and the n + -type layer 102 to prevent leakage current; the n + type layer 102 forms a PN junction in gradient distribution, the low-resistance layer 104 prevents the n + type layer 102 and the p-type layer 105 from forming an inverted junction, and the open-circuit voltage Voc and the fill factor FF of the laminated cell are improved; the p-type layer 105 is connected with the perovskite cell through an interface passivation layer 106 to form a hole transport layer of the perovskite cell; an interfacial passivation layer 106 forms a passivated interface between the p-type layer 105 and the perovskite cell. The interface passivation layer 106 raises the open circuit voltage Voc of the stack.
Specifically, the n-type layer 100 is a CdS (cadmium sulfide) layer, the first high-resistance layer 101 is an i-ZnO (intrinsic zinc oxide) layer, the n + -type layer 102 is an AZO (aluminum-doped zinc oxide) layer or a BZO (gradually-doped boron zinc oxide) layer, and the low-resistance layer 104 is an ITO (indium tin oxide) layer; the p-type layer 105 is a NiOx (nickel oxide) layer; the interface passivation layer 106 is a SAM (self-assembled single molecule) layer.
Preferably, a second high-resistance layer 103 is further arranged between the n + -type layer 102 and the low-resistance layer 104, and the second high-resistance layer 103 is arranged between the n + -type layer 102 and the low-resistance layer 104 to form a passivation interface so as to prevent leakage current; the second high-resistance layer is SnO 2 (tin oxide) layer. The second high resistance layer 103 forms a passivation interface to prevent leakage current and improve the open circuit voltage Voc and the fill factor FF of the stacked cell.
Preferably, the junction surface of the n + -type layer 102 and the low resistance layer 104 is subjected to surface treatment including etching and ultraviolet ozone treatment. And surface treatment is carried out, surface pollutants are removed, surface smoothness is improved, and the open-circuit voltage Voc and the fill factor FF of the laminated cell are improved.
Specifically, the CIGS cell includes a substrate layer 2, a back electrode layer 3, and a photoelectric conversion layer 4, which are sequentially disposed; the photoelectric conversion layer 4 is connected with the n-type layer 100 to form a PN junction; the perovskite battery comprises a perovskite layer 5, an electron transmission layer 6 and a transparent conducting layer 7 which are sequentially arranged; the p-type layer 105 is connected to the perovskite layer 5 through an interface passivation layer 106 to become the hole transport layer of the perovskite cell. The base layer 2 is a glass substrate, and the back electrode layer 3 is a Mo (molybdenum) layer; the photoelectric conversion layer 4 is a CIGS (copper indium gallium selenide) film layer; the electron transport layer 6 is a C60-SnO2 composite layer; the transparent conductive layer 7 is a TCO (transparent conductive oxide) film layer.
Referring to fig. 2, the method for preparing the tunneling composite layer of the perovskite copper indium gallium selenide laminated battery according to the embodiment of the invention includes the following steps:
s1: sequentially depositing an n-type layer 100, a first high-resistance layer 101 and an n + -type layer 102 on the CIGS cell; the n-type layer 100 is a CdS layer, the first high-resistance layer 101 is an i-ZnO layer, and the n + -type layer 102 is an AZO layer or a BZO layer;
s11: depositing a CdS layer on the CIGS cell by a chemical water area mode or an atomic layer deposition mode to be used as an n-type layer 100;
s12: depositing an i-ZnO layer on the n-type layer 100 as a first high-resistance layer 101 in a magnetron sputtering mode or a metal organic chemical vapor deposition mode;
s13: an AZO layer or a BZO layer is deposited as the n + -type layer 102 on the first high-resistance layer 101 by means of magnetron sputtering or by means of metal organic chemical vapor deposition.
S2: performing surface treatment on the n + -type layer 102; the method comprises the following steps of etching the surface of an n + type layer 102 by hydrochloric acid: and performing surface smoothing treatment on the surface of the etched n + -type layer 102 by adopting ultraviolet ozone. The hydrochloric acid etching can remove pollutants on the surface of the film layer, the ultraviolet ozone treatment can reduce the roughness of the interface, and the better tunneling composite layer body 1 can be formed.
S3: depositing a low-resistance layer 104, a p-type layer 105 and an interface passivation layer 106 on the n + type layer 102 in sequence; the low resistance layer 104 is an ITO layer; the p-type layer 105 is a NiOx layer; the interface passivation layer 106 is a SAM layer. The method specifically comprises the following steps: depositing an ITO layer as a low-resistance layer 104 in a magnetron sputtering mode; and depositing a NiOx layer on the low-resistance layer 104 in a magnetron sputtering mode to serve as a p-type layer 105, and depositing a SAM layer on the p-type layer 105 in a slit coating mode to serve as an interface passivation layer 106.
Preferably, step S3 is preceded by: deposition of SnO by atomic layer deposition on n + -type layer 102 2 The layer serves as a second high-resistance layer 103; the second high resistance layer 103 forms a passivated interface to prevent leakage current.
In summary, in the tunneling composite layer of the perovskite copper indium gallium selenide laminated cell and the preparation method thereof according to the embodiment of the invention, the low-resistance layer 104 is arranged between the n + type layer 102 and the p type layer 105 to prevent the n + type layer 102 and the p type layer 105 from forming an inverse junction; an interface passivation layer 106 is arranged on the p-type layer 105 to form a passivation interface, so that the open-circuit voltage Voc of the laminated cell is increased; performing surface treatment on the surface of the n + -type layer 102, removing surface pollutants, and improving the surface smoothness; a high-resistance layer 103 is additionally arranged between the n + type layer 102 and the low-resistance layer 104 to form a passivation interface, so that leakage current is prevented, the open-circuit voltage Voc and the fill factor FF of the laminated cell are integrally improved, the integral performance of the laminated cell is improved, and the conversion efficiency is improved.
Although the present invention has been described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. The tunneling composite layer is characterized by comprising a tunneling composite layer body, wherein the tunneling composite layer body is arranged between a CIGS battery and a perovskite battery of the perovskite CIGS laminated battery and used for connecting the CIGS battery and the perovskite battery; the tunneling composite layer body comprises an n-type layer, a first high-resistance layer, an n + type layer, a low-resistance layer, a p-type layer and an interface passivation layer which are sequentially arranged, the n-type layer is connected with the CIGS battery to form a PN junction, the first high-resistance layer forms a passivation interface between the n-type layer and the n + type layer, the n + type layer forms a PN junction in gradient distribution, and the p-type layer is connected with the perovskite battery through the interface passivation layer to form a hole transmission layer of the perovskite battery.
2. The tunneling composite layer of the perovskite copper indium gallium selenide laminated cell as claimed in claim 1, wherein the n-type layer is a CdS layer, the first high-resistance layer is an i-ZnO layer, the n + -type layer is an AZO layer or a BZO layer, and the low-resistance layer is an ITO layer; the p-type layer is a NiOx layer.
3. The tunneling composite layer of the perovskite copper indium gallium selenide laminated cell as claimed in claim 1, wherein a second high-resistance layer is further arranged between the n + type layer and the low-resistance layer, and the second high-resistance layer is arranged between the n + type layer and the low-resistance layer to form a passivation interface; the second high-resistance layer is SnO 2 A layer.
4. The perovskite copper indium gallium selenide tandem cell tunneling composite layer of claim 1, wherein the interfacial passivation layer forms a passivation interface between the p-type layer and the perovskite cell; the interface passivation layer is a SAM layer.
5. The tunneling composite layer of the perovskite copper indium gallium selenide laminated battery as claimed in claim 1, wherein the connection surface of the n + type layer and the low-resistance layer is subjected to surface treatment, and the surface treatment comprises etching and ultraviolet ozone treatment.
6. The perovskite CIGS tandem cell tunneling composite layer of claim 1, wherein the CIGS cell comprises a substrate layer, a back electrode layer and a photoelectric conversion layer which are arranged in sequence; the photoelectric conversion layer is connected with the n-type layer to form a PN junction; the perovskite battery comprises a perovskite layer, an electron transmission layer and a transparent conducting layer which are sequentially arranged; the p-type layer is connected with the perovskite layer through an interface passivation layer to form a hole transport layer of the perovskite battery.
7. A preparation method of a perovskite CIGS laminated cell tunneling composite layer is used for preparing the perovskite CIGS laminated cell tunneling composite layer as claimed in any one of claims 1 to 6, and is characterized by comprising the following steps:
s1: sequentially depositing an n-type layer, a first high-resistance layer and an n + type layer on the CIGS cell; the n-type layer is a CdS layer, the first high-resistance layer is an i-ZnO layer, and the n + -type layer is an AZO layer or a BZO layer;
s2: carrying out surface treatment on the n + type layer;
s3: depositing a low-resistance layer, a p-type layer and an interface passivation layer on the n + type layer in sequence; the low-resistance layer is an ITO layer; the p-type layer is a NiOx layer; the interface passivation layer is a SAM layer.
8. The method for preparing the tunneling composite layer of the perovskite copper indium gallium selenide laminated battery according to claim 7, wherein the step S1 comprises the following steps:
s11: depositing a CdS layer on the CIGS cell as an n-type layer in a chemical water area mode or an atomic layer deposition mode;
s12: depositing an i-ZnO layer on the n-type layer in a magnetron sputtering mode or a metal organic chemical vapor deposition mode to serve as a first high-resistance layer;
s13: and depositing an AZO layer or a BZO layer on the first high-resistance layer in a magnetron sputtering mode or a metal organic chemical vapor deposition mode to serve as an n + type layer.
9. The method for preparing the tunneling composite layer of the perovskite copper indium gallium selenide laminated cell as claimed in claim 7, wherein the step S2 comprises the following steps: and etching the surface of the n + type layer by adopting hydrochloric acid: and adopting ultraviolet ozone to carry out surface smoothing treatment on the surface of the n + type layer after the etching is finished.
10. The method for preparing the tunneling composite layer of the perovskite copper indium gallium selenide laminated cell as claimed in claim 7, wherein before the step S3, the method further comprises: depositing SnO on the n + type layer by means of atomic layer deposition 2 The layer is used as a second high-resistance layer; the step S3 includes: depositing an ITO layer as a low-resistance layer in a magnetron sputtering mode; and depositing a NiOx layer on the low-resistance layer in a magnetron sputtering mode to serve as a p-type layer, and depositing a SAM layer on the p-type layer in a slit coating mode to serve as an interface passivation layer.
CN202211535447.XA 2022-12-02 2022-12-02 Perovskite copper indium gallium selenide laminated battery tunneling composite layer and preparation method thereof Pending CN115911141A (en)

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