CN115901827A - Sample structure applied to FIB processing and analysis and preparation method thereof - Google Patents

Abstract

The invention discloses a sample structure applied to FIB processing and analysis and a preparation method thereof, belonging to the technical field of FIB processing and analysis and comprising a first metal layer, a second metal layer and a sample, wherein the back surface of the sample is adhered to the surface of the first metal layer, and the second metal layer is partially covered on the front surface of the sample so that the front surface of the sample is used for exposing an FIB analysis processing area to the outside; fixing the back of the sample on the surface of the first metal layer; grinding the front surface of the sample to reach a proper thickness; the front surface of the sample is partially covered with a second metal layer for FIB analysis processing. The invention adopts the first metal layer and the second metal layer to fix the sample in the middle and expose the area to be analyzed or processed of the sample outside, thereby flatly fixing the deformed and coiled film sample on the base and meeting the requirements of FIB processing or analysis.

Description

Sample structure applied to FIB processing and analysis and preparation method thereof

Technical Field

The invention relates to the technical field of FIB processing and analysis, in particular to a sample structure applied to FIB processing and analysis and a preparation method thereof.

Background

In FIB (Focused Ion beam), an Ion beam generated by an Ion source is accelerated by an Ion gun, and then Focused to act on the surface of a sample. The functions of the utility model comprise: (1) Generating secondary electron signals to obtain an electronic image, which has a function similar to that of SEM; (2) Stripping surface atoms by using a strong current ion beam to finish micro-scale and nano-scale surface morphology processing; (3) The metal, oxide layer, or deposited metal layer can be selectively stripped by physical sputtering in combination with chemical gas reaction.

The FIB can provide wafer lines or related mask modifications of part of samples and engineering wafers before mass production of final products, and the verification results of the samples are used to shorten the development time and cycle and accelerate the time of marketing of the final products.

However, since FIB processes and analyzes a sample by using an electron beam and an ion beam, if the sample has poor insulation or thermal conductivity, it is often prone to failure due to accumulation of electrons or excessive temperature during the analysis process. Therefore, the FIB sample must be prepared with good electrical and thermal conductivity. In addition, it is a challenge to FIB processing or analysis to analyze the thin film of organic or special material with extremely high flexibility, such as thin TFT-OLED structure, so as to make the thin film sample rolled by deformation flat and fixed on the base.

At present, the panels used by most smart phones are mainly classified into TFT LCD and AMOLED. AMOLED is a short term for Active-matrix Organic Light-emitting Diode, i.e. Active matrix Organic Light-emitting Diode, and AM Active matrix refers to the pixel addressing technique behind OLED. Since each pixel of the AMOLED can emit light by itself, the AMOLED can be independently controlled, and purer black and higher contrast can be realized. In addition, when the picture is displayed, the power consumption can be reduced by closing the pixels which are not needed. Because the number of layers in the screen module is less, the light transmittance is better, and the realization of higher brightness and wider visual angle is facilitated. Also, the AMOLED does not need a TFT backlight source, and is relatively thin.

OLEDs have a large number of analytical and inspection requirements in development or manufacturing quality. Among them, structural image observation by an electron microscope is an indispensable important analysis item. However, during the sample preparation process, when the OLED film layer is removed from the product, the film sample itself is severely coiled, which is not conducive to FIB processing analysis.

In view of the above, the present inventors have made extensive studies to meet this need.

Disclosure of Invention

In order to overcome the problem that a film sample which is deformed and coiled is flatly fixed on a base so as to meet the requirements of FIB processing or analysis in the prior art, the invention provides a sample structure applied to the FIB processing and analysis, which comprises a first metal layer, a second metal layer and a sample, wherein the back surface of the sample is adhered to the surface of the first metal layer, and the second metal layer is partially covered on the front surface of the sample so that the front surface of the sample used for FIB analysis processing is exposed outside. Here, the sample front side is the side to be analyzed or processed, while the first metal layer is fixedly arranged on the base or is part of the base surface.

Preferably, the first metal layer is selected from one of a conductive tape, a metal film layer and a metal plating layer;

the second metal layer is selected from one of a conductive adhesive tape, a metal film layer and a metal coating.

Preferably, the first metal layer and/or the second metal layer is a single element, an alloy or a composite layer.

Preferably, when the first metal layer is a metal plating layer, it is plated on a substrate.

Preferably, when the first metal layer is a metal plating layer, it is In or Sn — Bi alloy, and the melting point is less than 200 ℃.

Preferably, when the second metal layer is a metal film layer, the second metal layer and the sample are bonded by hot pressing;

or sputtering on the first metal layer and the surface of the sample.

Preferably, the sample is a low thermal conductivity material, a high resistance material, an organic material, or a flexible material.

Preferably, the low thermal conductive material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

The invention also provides a preparation method of the sample structure, which comprises the following steps:

fixing the back of a sample on the surface of a first metal layer;

grinding the front surface of the sample to reach a proper thickness;

and step three, partially covering a second metal layer on the front surface of the sample for FIB analysis processing.

The invention also provides a preparation method of the sample structure, which comprises the following steps:

step one, adhering the front surface of a sample to an adhesive tape, and adhering the adhesive tape to the surface of a first metal layer, wherein the first metal layer is plated on a substrate when being a metal plating layer;

heating the first metal layer to melt the surface of the first metal layer and combine the first metal layer with the sample;

tearing off the adhesive tape, and grinding the front side of the sample to reach a proper thickness;

and step four, partially covering a second metal layer on the front surface of the sample for FIB analysis processing.

Has the advantages that:

the technical scheme of the invention has the following beneficial effects: the first metal layer and the second metal layer are adopted to fix the sample in the middle, and the area to be analyzed or processed of the sample is exposed outside, so that the deformed and coiled film sample is flatly fixed on the base, and the requirements of FIB processing or analysis are met.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic diagram of a preferred sample structure according to the present invention;

FIG. 2 is a first schematic diagram of a preferred sample preparation structure by the adhesion method of the present invention;

FIG. 3 is a second schematic diagram of a preferred sample structure prepared by the adhesion method of the present invention;

FIG. 4 is a third schematic diagram of a preferred sample structure prepared by the adhesion method of the present invention;

FIG. 5 is a first schematic diagram of a sample structure prepared by the preferred fusion method of the present invention;

FIG. 6 is a second schematic diagram of a sample structure prepared by the fusion method of the present invention;

FIG. 7 is a third schematic diagram of a sample structure prepared by the preferred fusion method of the present invention;

FIG. 8 is a fourth schematic diagram of a sample structure prepared by the preferred fusion method of the present invention;

FIG. 9 is a fifth schematic diagram of a sample structure prepared by the preferred fusion method of the present invention;

FIG. 10 is a sixth schematic diagram of the structure of a sample prepared by the fusion method of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

As shown in fig. 1, the sample structure applied to FIB processing and analysis includes a first metal layer 1, a second metal layer 2 and a sample 3, wherein the back surface of the sample 3 is attached to the surface of the first metal layer 1, and the second metal layer 2 partially covers the front surface of the sample 3 so that the front surface of the sample 3 is exposed to the outside for FIB analysis processing. Here, the front side of the sample 3 is the side to be analyzed or processed, while the first metal layer 1 is fixedly arranged on the base or the first metal layer 1 is a part of the base surface.

As a preferred embodiment, the first metal layer 1 is selected from one of a conductive tape, a metal film layer and 5 metal plating layer;

the second metal layer 2 is selected from one of a conductive adhesive tape, a metal film layer and a metal plating layer.

In a preferred embodiment, the first metal layer 1 and/or the second metal layer 2 is a single element, an alloy or a composite layer.

In a preferred embodiment, when the first metal layer 1 is a metal plating layer, the plating layer 0 is provided on a substrate.

As a preferred embodiment, when the first metal layer 1 is a metal plating layer, it is In or Sn — Bi alloy, and the melting point is lower than 200 ℃.

As a preferred embodiment, when the second metal layer 2 is a metal film layer, it is bonded to the sample by hot pressing;

5 or sputtering on the surfaces of the first metal layer 1 and the sample 3.

As a preferred embodiment, the sample 3 is a low thermal conductive material, a high resistance material, an organic material, or a flexible material.

In a preferred embodiment, the low thermal conductive material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

0 as shown in fig. 2 to 4, the present embodiment further provides a method for preparing the sample structure, including the following steps:

fixing the back of a sample on the surface of a first metal layer;

grinding the front surface of the sample to reach a proper thickness;

and step three, partially covering a second metal layer on the front surface of the sample for FIB analysis processing.

As shown in fig. 5 to 10, the present embodiment further provides a method for preparing the sample structure, including the following steps:

step one, adhering the front surface of a sample 3 on an adhesive tape 4, and adhering the adhesive tape 4 to the surface of a first metal layer 1, wherein the first metal layer 1 is plated on a substrate 100 when being a metal plating layer; the metal coating is preferably an In coating, and the melting point of the In coating is 156.6 ℃;

step two, heating the first metal layer 1 to enable the surface of the first metal layer to be fused and then combined with the sample 3 to form a fusion bonding layer 5; the substrate 100 is preferably heated at 160 ℃ for 1min to melt the surface of the first metal layer 1 and bond the first metal layer with the sample 3;

tearing off the adhesive tape 4, and grinding the front side of the sample 3 to reach a proper thickness;

and step four, partially covering the front surface of the sample 3 with a second metal layer 2 for FIB analysis processing.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The sample structure applied to FIB processing and analysis is characterized by comprising a first metal layer, a second metal layer and a sample, wherein the back surface of the sample is adhered to the surface of the first metal layer, and the second metal layer partially covers the front surface of the sample so that an area, used for FIB analysis processing, of the front surface of the sample is exposed outside.

2. The sample structure applied to FIB (focused ion beam) processing and analysis according to claim 1, wherein said first metal layer is selected from one of a conductive adhesive tape, a metal film layer and a metal coating layer;

the second metal layer is selected from one of a conductive adhesive tape, a metal film layer and a metal coating.

3. The sample structure according to claim 1, wherein the first metal layer and/or the second metal layer is a single element, an alloy or a composite layer.

4. The sample structure of claim 2, wherein the first metal layer is plated on a substrate when the first metal layer is a metal plating layer.

5. The sample structure applied to FIB (focused ion beam) milling and analysis according to claim 2, wherein said first metal layer is In or Sn-Bi alloy when said first metal layer is a metal plating layer, and has a melting point lower than 200 ℃.

6. The sample structure according to claim 2, wherein the second metal layer is a metal film layer, and is bonded to the sample by thermocompression;

or sputtering on the first metal layer and the surface of the sample.

7. The sample structure applied to FIB (focused ion beam) processing and analysis according to claim 1, wherein said sample is a low thermal conductivity material, a high resistance material, an organic material or a flexible material.

8. The sample structure of claim 7, wherein the low thermal conductivity material is glass, the high resistance material is ceramic or semiconductor, the organic material is OLED, and the flexible material is fiber or plastic.

9. A method of preparing a sample structure according to any of claims 1 to 8, comprising the steps of:

fixing the back of a sample on the surface of a first metal layer;

grinding the front surface of the sample to reach a proper thickness;

and step three, partially covering a second metal layer on the front surface of the sample for FIB analysis processing.

10. A method of preparing a sample structure according to any one of claims 1 to 8, comprising the steps of:

adhering the front surface of a sample to an adhesive tape, and adhering the adhesive tape to the surface of the first metal layer;

heating the first metal layer to melt the surface of the first metal layer and combine the first metal layer with the sample;

tearing off the adhesive tape, and grinding the front side of the sample to reach a proper thickness;

and step four, partially covering a second metal layer on the front surface of the sample for FIB analysis processing.

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