CN115896727A - Vertical PVD (physical vapor deposition) double-sided deposition silicon wafer loading device - Google Patents
Vertical PVD (physical vapor deposition) double-sided deposition silicon wafer loading device Download PDFInfo
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- CN115896727A CN115896727A CN202211736060.0A CN202211736060A CN115896727A CN 115896727 A CN115896727 A CN 115896727A CN 202211736060 A CN202211736060 A CN 202211736060A CN 115896727 A CN115896727 A CN 115896727A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a vertical PVD double-sided deposition silicon wafer loading device; comprises a substrate frame and a carrier plate component; the support plate assembly comprises a tray and a mask plate, the tray is provided with a plurality of first coating areas, the reverse side wall of the tray in each first coating area is provided with an assembly groove, the tray in each first coating area is also provided with a first coating through hole, each first coating through hole extends to be communicated with the assembly groove, the mask plate is provided with a plurality of second coating areas, each mask plate is also provided with a second coating through hole, and the tray is detachably connected with the mask plate; the substrate frame is provided with a station, the substrate frame in the station is provided with a through groove, the substrate frame is also provided with a cover plate component, two cover plates of the cover plate component are respectively arranged at the front side and the back side of the substrate frame, the lower end of each cover plate is hinged with the substrate frame, the upper end of each cover plate is detachably connected with the substrate frame, and the cover plates are provided with cover holes. The loading device can realize the simultaneous film coating operation of the target on a plurality of substrates, and the film coating can be carried out on the target through two substrates in the same area.
Description
Technical Field
The invention relates to a vertical PVD double-sided deposition silicon wafer loading device.
Background
The PVD technology is a technology of physically vaporizing the surface of a material source (solid or liquid) into gaseous atoms or molecules or partially ionizing the gaseous atoms or molecules into ions under vacuum, and depositing a film with a specific function on the surface of a substrate by a low-pressure gas (or plasma) process, and the PVD technology is one of the main surface treatment technologies.
The large-area magnetron sputtering coating equipment has two main modes, namely a horizontal mode and a vertical mode. At present, magnetron sputtering for TOPCon is mainly horizontal equipment, which has the advantages that silicon wafers are convenient to feed, and a carrier plate can be used for masking by adopting a lower coating film. The horizontal silicon wafer loading device mainly has the following defects: (1) the silicon wafer is easy to fall off to cause target short circuit; (2) the occupied area is large; (3) double-sided deposition is not easily achieved. At present, a silicon wafer loading device used with a vertical magnetron sputtering device is lacked.
The utility model patent with application number of CN202122819467.7 discloses a knife grain vacuum coating loading frame, which comprises a knife grain mounting frame, wherein the knife grain mounting frame is of a tile-shaped structure and comprises a tile-shaped bottom plate, a tile-shaped top plate, a supporting rod and a knife grain rod; the tile-shaped top plate and the tile-shaped bottom plate are arranged in a vertically corresponding manner, the supporting rod is arranged between the tile-shaped top plate and the tile-shaped bottom plate and positioned at the inner side of the tile-shaped top plate and the tile-shaped bottom plate, the supporting rod and the tile-shaped bottom plate are fixedly installed, and the supporting rod and the tile-shaped top plate are detachably installed; the knife particle rod is arranged between the tile-shaped top plate and the tile-shaped bottom plate and positioned on the outer side, the knife particle rod is rotationally connected with the tile-shaped bottom plate, and the knife particle rod is rotationally connected with the tile-shaped top plate; and a toggle gear is fixedly arranged at the lower section of the knife particle rod. The above patent technology can not be applied to vertical PVD magnetron sputtering coating equipment, and can not overcome the technical problems existing in the prior art.
The invention with the application number of CN201810599996.0 belongs to the technical field of vacuum coating, and particularly relates to a physical vapor deposition PVD device which comprises a vacuum chamber, a workpiece frame, an ion source system, a sputtering power supply and a plurality of double-group twin magnetron targets, wherein the workpiece frame is arranged in the vacuum chamber, the workpiece frame is of a vertical rotary structure, and the ion source system adopts a vertical strip-shaped large-area ion source. Similarly, the above patent technology cannot be applied to vertical PVD magnetron sputtering coating equipment, and cannot overcome the technical problems in the prior art.
Disclosure of Invention
The invention aims to solve the technical problem of providing a vertical PVD double-sided deposition silicon wafer loading device which is reasonable in structure and suitable for being used by vertical magnetron sputtering equipment.
In order to solve the technical problem, the invention provides a vertical PVD double-sided deposition silicon wafer loading device;
comprises a substrate frame and at least one group of carrier plate components;
the carrier plate assembly comprises a tray and a mask plate, the tray is provided with a plurality of first film coating areas, the back side wall of the tray in each first film coating area is provided with an assembly groove matched with the outline of the substrate, the tray in each first film coating area is also provided with a first film coating through hole matched with the film coating area of the substrate, one side of each first film coating through hole extends to the front side wall of the tray, the other side of each first film coating through hole extends to be communicated with the assembly groove, the mask plate is provided with a plurality of second film coating areas, the plurality of second film coating areas correspond to the plurality of first film coating areas of the tray one by one, the mask plate in each second film coating area is also provided with a second film coating through hole matched with the film coating area of the substrate, the second film coating through holes penetrate through the front side wall and the back side wall of the mask plate, the tray is detachably connected with the mask plate, and a space for placing two substrates is formed between the assembly groove of the tray and the mask plate;
the substrate frame is provided with at least one station, the substrate frame in the station is provided with a through groove for placing a corresponding support plate component, the substrate frame is further provided with at least one group of cover plate components, the at least one station and the at least one group of support plate components are in one-to-one correspondence, each cover plate component comprises two cover plates, the two cover plates are respectively arranged on the front side and the back side of the substrate frame corresponding to the station positions, the lower ends of the cover plates are hinged with the substrate frame, the upper ends of the cover plates are detachably connected with the substrate frame, the cover plates are provided with cover holes penetrating through the front side and the back side of the cover plates, and the cover holes completely cover all first coating through holes or all second coating through holes of the support plate components.
As the optimization of the vertical PVD double-sided deposition silicon wafer loading device, the cover plate assembly further comprises two fixing bolts, the two fixing bolts correspond to the two cover plates one by one, the fixing bolts penetrate through the upper ends of the corresponding cover plates and are matched with the substrate frame body, and the detachable connection between the upper ends of the cover plates and the substrate frame is realized.
As the preferable preference of the vertical PVD double-sided deposition silicon wafer loading device, the annular bulge extends from the front surface of the mask plate along the edge of the second coating through hole, and after the tray is matched with the mask plate, only a space for accommodating two substrates is formed between the front end surface of the annular bulge and the corresponding assembling groove of the tray.
As the preferable selection of the vertical PVD double-sided deposition silicon wafer loading device, a chamfer angle is arranged between the wall of the second coating through hole of the mask plate and the back end face of the mask plate.
As the preferable preference of the vertical PVD double-sided deposition silicon wafer loading device, the top of the substrate frame is provided with a plurality of guide rollers matched with the guide rails in the tubular furnace. The guide rollers are sequentially arranged at intervals along the length direction of the substrate frame.
As the preferable preference of the vertical PVD double-sided deposition silicon wafer loading device, the bottom of the substrate frame is provided with a drawing round steel matched with a driving mechanism in the tubular furnace.
After the structure is adopted, two substrates are placed in the space between the assembling groove of each tray and the mask plate, the trays and the mask plate are fixed through bolts, the support plate assembly is integrally placed in the corresponding station of the substrate frame, and the two cover plates of the cover plate assembly respectively abut against the trays and the mask plate of the support plate assembly.
The vertical PVD double-sided deposition silicon wafer loading device can realize the simultaneous coating operation of the target on a plurality of substrates, and the coating can be carried out on the two substrates in the same region.
Drawings
FIG. 1 is a rear view of a tray in an embodiment of the vertical PVD double-sided deposition silicon wafer loading apparatus.
Fig. 2 is a cross-sectional view of the left side view of fig. 1.
Fig. 3 is an enlarged view of a portion a of fig. 2.
FIG. 4 is a back view of a mask plate in an embodiment of the loading device for a vertical PVD double-sided deposition silicon wafer.
Fig. 5 is a cross-sectional view of the left side view of fig. 4.
Fig. 6 is an enlarged view of a portion B of fig. 5.
FIG. 7 is a front view of a substrate holder in an embodiment of the present vertical PVD double side deposition wafer loading apparatus.
Fig. 8 is a cross-sectional view of the left side view of fig. 7.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as broadly as the present invention is capable of modification in various respects, all without departing from the spirit and scope of the present invention.
The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Please refer to fig. 1 to 8.
The vertical PVD double-sided deposition silicon wafer loading device comprises a substrate frame 2 and two groups of carrier plate assemblies.
The carrier plate assembly comprises a tray 11 and a mask plate 12, wherein the tray 11 is provided with six first coating areas, the back side wall of the tray 11 in the first coating area is provided with an assembly groove 11a matched with the outline of a substrate, the tray 11 in the first coating area is also provided with a first coating through hole 11b matched with the coating area of the substrate, one side of the first coating through hole 11b extends to the front side wall of the tray 11, the other side of the first coating through hole 11b extends to be communicated with the assembly groove 11a, the mask plate 12 is provided with six second coating areas, the six second coating areas are in one-to-one correspondence with the six first coating areas of the tray 11, the mask plate 12 in the second coating area is also provided with a second coating through hole 12b matched with the coating area of the substrate, the cross sectional shapes and the areas of the first coating through hole 11b and the second coating through hole 12b are the same, the second coating through hole 12b penetrates through the front side wall and the back side wall of the mask plate 12, a bolt is arranged between the second coating through the first coating through hole 12b and the chamfer 12a chamfer angle of the tray 11, and the assembly groove 11a bolt is larger than the chamfer angle of the assembly groove 12, and the tray 11a bolt.
An annular bulge 12a extends on the front surface of the mask plate 12 along the edge of the second coating through hole 12b, and after the tray 11 is matched with the mask plate 12, only a space for accommodating two substrates is formed between the front end surface of the annular bulge 12a and the corresponding assembling groove 11a of the tray 11.
The substrate frame 2 is provided with two stations, the substrate frame 2 in the stations is provided with a through groove for placing a corresponding support plate component, the substrate frame 2 is further provided with two sets of cover plate 21 components, the two stations and the two sets of support plate components are in one-to-one correspondence, the cover plate 21 components comprise two cover plates 21, the two cover plates 21 are respectively positioned at the two sides of the front and back surfaces of the substrate frame 2 at the positions of the corresponding stations, the lower end of the cover plate 21 is hinged with the substrate frame 2, the upper end of the cover plate 21 is detachably connected with the substrate frame 2, the cover plate 21 is provided with a cover hole 21a penetrating through the front and back surfaces of the cover plate, the cover hole 21a completely covers all first coating through holes 11b or all second coating through holes 12b of the support plate component, and the area of the cover hole 21a is smaller than that of the tray 11.
The cover plate 21 subassembly still includes two fixing bolt 21b, two fixing bolt 21b and two cover plate 21 one-to-ones, fixing bolt 21b run through corresponding cover plate 21 upper end and with 2 body cooperations of substrate frame, realize the dismantled connection between cover plate 21 upper end and the substrate frame 2.
Five guide rollers 22 matched with the guide rail in the tubular furnace are arranged at the top of the substrate frame 2. Five guide rollers 22 are sequentially arranged at intervals along the length direction of the substrate frame 2, and the bottom of the substrate frame 2 is provided with polished round steel 23 matched with a driving mechanism in the tubular furnace.
When the mask plate assembly is used, two substrates are placed in a space between the assembling groove 11a of each tray 11 and the mask plate 12, the trays 11 and the mask plates 12 are fixed through bolts, the support plate assembly is integrally placed in two stations of the substrate frame 2, and the two cover plates 21 of the cover plate 21 assembly are respectively abutted against the trays 11 and the mask plates 12 of the support plate assembly.
The above description is only one embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the principle of the present invention, and these should also be considered as falling within the protection scope of the present invention.
Claims (6)
1. A vertical PVD double-sided deposition silicon wafer loading device is characterized in that:
comprises a substrate frame and at least one group of carrier plate components;
the carrier plate assembly comprises a tray and a mask plate, the tray is provided with a plurality of first film coating areas, the back side wall of the tray in each first film coating area is provided with an assembly groove matched with the outline of the substrate, the tray in each first film coating area is also provided with a first film coating through hole matched with the film coating area of the substrate, one side of each first film coating through hole extends to the front side wall of the tray, the other side of each first film coating through hole extends to be communicated with the assembly groove, the mask plate is provided with a plurality of second film coating areas, the plurality of second film coating areas correspond to the plurality of first film coating areas of the tray one by one, the mask plate in each second film coating area is also provided with a second film coating through hole matched with the film coating area of the substrate, the second film coating through holes penetrate through the front side wall and the back side wall of the mask plate, the tray is detachably connected with the mask plate, and a space for placing two substrates is formed between the assembly groove of the tray and the mask plate;
the substrate frame is provided with at least one station, the substrate frame in the station is provided with a through groove for placing a corresponding support plate component, the substrate frame is further provided with at least one set of cover plate components, the at least one station and the at least one set of support plate components are in one-to-one correspondence, each cover plate component comprises two cover plates, the two cover plates are respectively positioned at the front side and the back side of the substrate frame corresponding to the station position, the lower ends of the cover plates are hinged to the substrate frame, the upper ends of the cover plates are detachably connected with the substrate frame, the cover plates are provided with cover holes penetrating through the front side and the back side of the cover plates, and the cover holes completely cover all first coating through holes or all second coating through holes of the support plate components.
2. The vertical PVD double sided deposition silicon wafer loading device of claim 1, wherein:
the cover plate assembly further comprises two fixing bolts, the two fixing bolts correspond to the two cover plates one to one, the fixing bolts penetrate through the upper ends of the corresponding cover plates and are matched with the substrate frame body, and detachable connection between the upper ends of the cover plates and the substrate frame is achieved.
3. The vertical PVD double sided deposition silicon wafer loading apparatus of claim 1, wherein:
the front surface of the mask plate extends along the edge of the second coating through hole to form an annular bulge, and after the tray is matched with the mask plate, a space for accommodating two substrates is only formed between the front end surface of the annular bulge and the corresponding assembling groove of the tray.
4. The vertical PVD double sided deposition silicon wafer loading device of claim 1, wherein:
and a chamfer angle is arranged between the wall of the second coating through hole of the mask plate and the back end face of the mask plate.
5. The vertical PVD double sided deposition silicon wafer loading device of claim 1, wherein:
the top of the substrate frame is provided with a plurality of guide rollers matched with the guide rails in the tube furnace, and the guide rollers are sequentially arranged at intervals along the length direction of the substrate frame.
6. The vertical PVD double sided deposition silicon wafer loading device of claim 1, wherein:
and the bottom of the substrate frame is provided with a polished round steel matched with a driving mechanism in the tubular furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736060.0A CN115896727A (en) | 2022-12-31 | 2022-12-31 | Vertical PVD (physical vapor deposition) double-sided deposition silicon wafer loading device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736060.0A CN115896727A (en) | 2022-12-31 | 2022-12-31 | Vertical PVD (physical vapor deposition) double-sided deposition silicon wafer loading device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115896727A true CN115896727A (en) | 2023-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211736060.0A Pending CN115896727A (en) | 2022-12-31 | 2022-12-31 | Vertical PVD (physical vapor deposition) double-sided deposition silicon wafer loading device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115896727A (en) |
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2022
- 2022-12-31 CN CN202211736060.0A patent/CN115896727A/en active Pending
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