CN115896715A - Binding mode of extrusion type metal plane target - Google Patents
Binding mode of extrusion type metal plane target Download PDFInfo
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- CN115896715A CN115896715A CN202310232404.2A CN202310232404A CN115896715A CN 115896715 A CN115896715 A CN 115896715A CN 202310232404 A CN202310232404 A CN 202310232404A CN 115896715 A CN115896715 A CN 115896715A
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Abstract
The invention discloses a binding mode of an extrusion type metal plane target, which relates to the field of target preparation and has the technical scheme key points that: placing the back plate and the target material in a binding heating table, heating at the heating rate of 2-5 ℃/min to 160-180 ℃, and keeping the temperature for 0.2-1.0h; the indium ingot is in a molten state; uniformly spreading on the surfaces of a back plate and a target, carrying out ultrasonic dispersion on the indium, reducing the temperature to 120-140 ℃ at the cooling rate of 1-2 ℃/min, keeping the temperature for 0.5-1.5h, reducing the temperature to 60-90 ℃ at the cooling rate of 1-5 ℃/min, keeping the temperature, and knurling or scribing the indium layer on the surfaces of the target and the back plate; and putting the target material and the back plate into a binding mold, longitudinally extruding by using roller type extrusion equipment, cooling to room temperature in air, and taking out the target material. The binding mode of the extrusion type metal plane target material ensures the relative position of the target material under the condition of ensuring the attaching rate, and improves the flatness of the target material.
Description
Technical Field
The invention relates to the field of metal targets, in particular to a binding mode of an extrusion type metal plane target.
Background
With the rapid development of integrated circuits such as new mixed films, microelectronic semiconductors and the like and chip components, especially photomagnetic discs, flat liquid crystal displays, photovoltaics, automobile glass, architectural glass, consumer electronics and the like, and the continuous progress of magnetron sputtering technology, the variety and market scale of sputtering targets are rapidly expanded. The target materials are generally classified into a rotary target and a planar target according to the shape thereof.
The key to determining the performance of the thin film is the physical and chemical properties of the target material itself and the quality of the overall part. The bonding quality of the target and the backing plate can directly influence the use of sputtering. Because the target can generate heat all the time in the sputtering process, continuous thermal stress accumulation is caused, and if the binding quality is unqualified, poor conduction, poor heat dissipation, local uneven heating and target cracking and even target missing can occur.
At present, the most popular binding mode of the metal plane target is that the back plate is made of copper material and indium material is used as brazing filler metal. The key point of binding is that the selected material has low thermal resistance so as to improve the sputtering power and prevent the target material from falling off or cracking due to poor heat dissipation; the bound gaps are as few as possible so as to avoid the phenomena of target cracking and uneven deposition; the brazing material must also have sufficient strength while maintaining sufficient flexibility to minimize residual stresses during the bonding process. Finally, the target material and the back plate can be easily separated by the brazing filler metal bound with the target material, so that the back plate can be used repeatedly.
At present, the binding difficulty is that the binding rate still needs to be kept above 95% in such a huge area. The target material binding method has the advantages that the obvious binding defect does not exist, meanwhile, the geometric dimension of the target material is required to be completely controlled within the production requirement range, particularly, the control difficulty is huge for the splicing gap and the bending degree of the back plate, and the target material is easy to crack in the binding process, so that the manufacturing cost of the target material is increased. When binding, reserving a 0.2-0.5 mm gap between the target material and the back plate, heating the back plate and the target material to about 150 ℃, coating indium on the surfaces of the back plate and the target material, attaching the target material and the back plate together, adjusting the relative position, pressing a weight on the surface of the target material, and connecting the target material and the back plate together after the indium is solidified. Due to certain difference of thermal expansion coefficients of the back plate, the solder and the target material, the shrinkage is inconsistent in the heating and cooling process, and the phenomena of back plate bending, solder layering or target missing are often caused; especially, when the size of the target material exceeds a certain range, the deformation after binding is difficult to control the generation of defects. At present, in order to deal with the phenomenon, a commonly adopted measure is to bend the back plate in advance, give a certain prestress to the back plate, and flatten the back plate during binding, so that the abnormity occurring during binding can be solved to a certain extent. However, as sputtering progresses, the target becomes thinner, and at this time, the shearing force in the backing plate acts to cause the product to warp.
Therefore, a binding method suitable for a large-size planar target needs to be developed, the relative position of the target, the flatness in the binding process and the use process are ensured under the condition of ensuring the bonding rate, and a mode capable of realizing large-scale production is necessary.
Therefore, a new solution is needed to solve this problem.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a binding mode of an extrusion type metal planar target, which can be suitable for a binding method of a large-size planar target and ensure the flatness of the relative position/binding process and the using process of the target under the condition of ensuring the fitting rate.
The technical purpose of the invention is realized by the following technical scheme: a binding mode of an extrusion type metal plane target comprises the following steps:
s1, ultrasonic indium coating on the surface of a backboard target: manufacturing a pair of binding molds according to the sizes of the target material and the back plate, placing the back plate and the target material on a binding heating table, heating to 160-180 ℃ at a heating rate of 2-5 ℃/min, and keeping the temperature for 0.2-1.0h; simultaneously melting the indium ingot into a liquid state; uniformly spreading liquid indium on the surfaces of a back plate and a target material, and ultrasonically dispersing the indium material by using an ultrasonic dispersion machine to flatten the indium material and remove redundant indium material;
s2, knurling/scribing the indium coating: reducing the temperature of the back plate and the target material coated with indium to 120-140 ℃ at the cooling rate of 1-2 ℃/min, preserving the heat for 0.5-1.5h, then reducing the temperature to 60-90 ℃ at the cooling rate of 1-5 ℃/min, preserving the heat, and knurling or scribing the indium layer on the surfaces of the target material and the back plate by adopting a knurling head or a numerical control lathe;
s3, extrusion binding: and (3) putting the target and the back plate into a binding mould, adopting roller type extrusion equipment to extrude along the longitudinal direction of the product, then cooling to room temperature in the air, and taking out the target.
The invention is further configured to: in the step S1, the selected die is made of stainless steel, the wall thickness is 10mm-20mm, and the inner wall of the die is coated with high-temperature-resistant rubber so as to prevent the back plate and the target material from being scratched in the binding process.
The invention is further configured to: in the step S1, sand blasting is carried out on the binding surface of the back plate and the target material, so that the surface roughness Rz of the product reaches 30-60 mu m.
The invention is further configured to: wherein the sand blasting medium is white corundum sand with the granularity of 30-80 meshes; when in sand blasting, the distance between the spray head and the surface of the product is 80mm-130mm, the spray head advances longitudinally according to the transverse reciprocating, and the spray pressure is 0.4MPa-0.6MPa.
The invention is further configured to: in the step S1, the positions, which do not need to be bound, of the back plate are protected by adopting high-temperature-resistant glue so as to prevent the indium material from polluting the surface.
The invention is further configured to: in the step S1, the ultrasonic frequency is 10KHz-38KHz, and the ultrasonic time is 15min-45min.
The invention is further configured to: during ultrasonic dispersion, 2-5 copper wires or aluminum wires of 0.15mm-0.3mm are laid on the surfaces of the back plate and the target according to the size of the ultrasonic tool head, and indium is continuously exceeded for 10min-20min, so that the indium material is leveled, redundant indium material is removed, and the copper wires or the aluminum wires are dismantled.
The invention is further configured to: in the step S2, knurling modes can be performed by adopting single-wheel extrusion type knurling, double-wheel extrusion type knurling, single-wheel cutting knurling, double-wheel cutting knurling, clamp pressing type knurling or three-wheel knurling, wherein the knurling interval is 0.1mm-0.3mm, and the knurling depth is 0.1mm-0.2mm.
The invention is further configured to: when in scribing, the numerical control lathe adopts a V-shaped cutter or a flat-head cutter to scribe the indium layer, wherein the line width is 0.1-0.5mm, the line distance is 0.1-0.3 mm, and the scribing depth is 0.1-0.2 mm; the cross section of the scribing line can be V-shaped or rectangular, and the scribing line can be in the form of straight lines or crossed lines.
The invention is further configured to: in the step S3, the outer diameter of a roller of the extrusion equipment is 150-300mm, and the height of the roller is consistent with the width of a product; the extrusion force is 0.5MPa-3MPa, the advancing speed of the roller is 30mm/min-100mm/min, and the extrusion head is lifted after 1-3 times of reciprocating.
In conclusion, the invention has the following beneficial effects:
(1) the target material and the back plate are bound in a normal-temperature or low-temperature mode, so that the problem of poor bonding rate caused by indium surface oxidation can be avoided;
(2) the binding is carried out in a normal-temperature or low-temperature mode, and the relative position is fixed by adopting the die, so that the relative position and binding gap between the target and the back plate do not need to be gradually adjusted during binding;
(3) because the indium materials on the surfaces of the back plate and the target material are independently coated and then slowly cooled and solidified, the internal stress of the back plate and the target material can be effectively released, and a certain impact force is given to the target material in the binding process, so that the internal stress of the back plate and the target material is favorably eliminated, and the back plate does not need to be subjected to pre-stress treatment;
(4) the binding is carried out in a normal temperature or low temperature mode, so that the phenomena of target missing, cracking, bending and the like caused by the difference of thermal expansion coefficients are eliminated;
(5) by utilizing the excellent plastic deformation of the indium material, the surface of the indium layer forms a 'furrow' in a mode of indium layer scribing or knurling, the target material and the back plate can be mutually engaged after being matched, and the raised indium material is deformed and displaced to be filled to a gap in an extruding mode to form an integral indium layer, so that the defect of the indium layer and the target material or the back plate formed due to capillary action can be eliminated, and the solder layer is thinner and the solder is saved.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic diagram of binding using a mold;
FIG. 3 is a C-Scan detection chart of example 1;
FIG. 4 is a C-Scan detection chart of comparative example 1.
Description of the preferred embodiment
The invention is described in detail below with reference to the figures and examples.
A binding mode of an extrusion type metal plane target material is shown as the attached figure 1, and mainly comprises the following three steps: s1, ultrasonically coating indium on the surface of a back plate target; s2, knurling/scribing the indium coating; and S3, extrusion binding.
Firstly, a pair of binding molds are manufactured according to the sizes of a target material and a back plate, the material of the selected mold is stainless steel, the wall thickness is 10mm-20mm, and the inner wall of the selected mold is coated with high-temperature-resistant rubber so as to prevent the back plate and the target material from being scratched in the binding process;
and carrying out sand blasting treatment on the binding surface of the back plate and the target material to ensure that the surface roughness Rz of the product reaches 30-60 mu m. The sand blasting medium is white corundum sand with the granularity of 30-80 meshes; the distance between the spray head and the surface of the product is 80-130mm during sand blasting, the spray head longitudinally advances according to transverse reciprocating, and the spray pressure is 0.4-0.6MPa.
The positions of the back plate which do not need to be bound are protected by adopting high-temperature-resistant glue so as to prevent the indium material from polluting the surface;
placing the back plate and the target material on a binding heating table, heating to 160-180 ℃ at a heating rate of 2-5 ℃/min, and preserving heat for 0.2-1.0h; simultaneously melting the indium ingot into a liquid state;
uniformly spreading liquid indium on the surfaces of a back plate and a target material, and performing ultrasonic dispersion on the indium material by using an ultrasonic dispersion machine, wherein the ultrasonic frequency is 10-38KHz, and the ultrasonic time is 15-45min;
according to the size of the ultrasonic tool head, 2-5 copper wires or aluminum wires with the thickness of 0.15-0.3mm are laid on the surfaces of the back plate and the target material, the indium is continuously exceeded for 10-20min, the indium material is leveled, redundant indium material is removed, and the copper wires or the aluminum wires are dismantled;
reducing the temperature to 120-140 ℃ at the cooling rate of 1-2 ℃/min, preserving the heat for 0.5-1.5h, then reducing the temperature to 60-90 ℃ at the cooling rate of 1-5 ℃/min, preserving the heat, and knurling or scribing the target and the indium layer on the surface of the back plate by adopting a knurling head or a numerical control lathe; the knurling can be performed in the modes of single-wheel extrusion type knurling (straight line and reticulate pattern), double-wheel extrusion type knurling (reticulate pattern), single-wheel cutting knurling (straight line), double-wheel cutting knurling (reticulate pattern), clamp-press type knurling (straight line and reticulate pattern), three-wheel knurling (straight line and reticulate pattern) and the like, the knurling interval is 0.1mm-0.3mm, and the knurling depth is 0.1mm-0.2mm; the numerical control lathe adopts a V-shaped cutter or a flat-head cutter to scribe the indium layer, wherein the line width is 0.1-0.5mm, the line distance is 0.1-0.3 mm, and the scribing depth is 0.1-0.2 mm; the section of the scribing line can be V-shaped or rectangular, and the scribing line can be in a straight line shape or a cross shape.
Putting the target material and the back plate into a binding mold, wherein the target material and the back plate can be extruded along the longitudinal direction of a product by adopting roller type extrusion equipment as shown in the attached figure 2; the outer diameter of the roller of the extrusion equipment is 150-300mm, and the height of the roller is consistent with the width of a product; the extrusion force is 0.5-3MPa, the advancing speed of the roller is 30-100 mm/min, and the extrusion head is lifted after 1-3 times of reciprocating. And cooling the target material to room temperature in the air, taking out the target material, and detecting the bonding rate by using C-Scan.
The first embodiment is as follows:
manufacturing a pair of binding molds according to the sizes of the target material and the back plate, wherein the selected molds are made of stainless steel, the wall thickness is 15mm, and the inner wall of the selected molds is coated with high-temperature-resistant rubber;
and carrying out sand blasting treatment on the binding surfaces of the back plate and the target material to ensure that the surface roughness Rz of the product reaches 45 mu m. The sand blasting medium is white corundum sand with the granularity of 60 meshes; the distance between the spray head and the surface of the product is 90mm during sand blasting, the spray head advances longitudinally according to transverse reciprocating, and the spray pressure is 0.4MPa.
The positions of the back plate which do not need to be bound are protected by adopting high-temperature-resistant glue so as to prevent the indium material from polluting the surface;
placing the back plate and the target material on a binding heating table, heating to 170 ℃ at a heating rate of 2 ℃/min, and preserving heat for 40min; simultaneously melting the indium ingot into liquid;
uniformly spreading liquid indium on the surfaces of a back plate and a target material, and performing ultrasonic dispersion on the indium material by using an ultrasonic dispersion machine, wherein the ultrasonic frequency is 28KHz, and the ultrasonic time is 30min;
laying 3 copper wires with the thickness of 0.15mm on the surfaces of the back plate and the target, continuously exceeding indium for 15min to level the indium, removing redundant indium, and dismantling the copper wires;
cooling to 120 ℃ at the cooling rate of 1 ℃/min, preserving heat for 0.5, then cooling to 80 ℃ at the cooling rate of 2 ℃/min, preserving heat, and knurling the indium layer on the surface of the target and the back plate by using a knurling head; the knurling can be single-wheel extrusion knurling, the knurling is in a reticulate pattern, the knurling interval is 0.1mm, and the knurling depth is 0.15mm;
placing the target material and the back plate into a binding mold, and extruding the target material and the back plate along the longitudinal direction of the product by using an extruding device when a roller is adopted; the outer diameter of a roller of the extrusion equipment is 180mm, and the height of the roller is consistent with the width of a product; the extrusion force is 1.5MPa, the advancing speed of the roller is 50mm/min, and the extrusion head is lifted after 1 round trip. And cooling the target material to room temperature in the air, taking out the target material, removing redundant indium material, and carrying out C-Scan detection and bonding.
Example two:
manufacturing a pair of binding molds according to the sizes of the target material and the back plate, wherein the selected mold is made of stainless steel, the wall thickness is 30mm, and the inner wall of the mold is coated with high-temperature-resistant rubber;
and carrying out sand blasting treatment on the binding surfaces of the back plate and the target material to ensure that the surface roughness Rz of the product reaches 40 mu m. The sand blasting medium is white corundum sand with the granularity of 80 meshes; the distance between the spray head and the surface of the product is 100mm during sand blasting, the spray head advances longitudinally according to transverse reciprocating, and the spray pressure is 0.6MPa.
The positions of the back plate which do not need to be bound are protected by adopting high-temperature-resistant glue so as to prevent the indium material from polluting the surface;
placing the back plate and the target material on a binding heating table, heating to 165 ℃ at the heating rate of 1 ℃/min, preserving heat for 1h, and simultaneously melting the indium ingot into liquid;
uniformly spreading liquid indium on the surfaces of a back plate and a target material, and performing ultrasonic dispersion on the indium material by using an ultrasonic dispersion machine, wherein the ultrasonic frequency is 38KHz, and the ultrasonic time is 15min;
laying 3 copper wires with the thickness of 0.15mm on the surfaces of the back plate and the target material, continuously exceeding indium for 10min to level the indium material, removing redundant indium material, and dismantling the copper wires;
reducing the temperature to 120 ℃ at the cooling rate of 2 ℃/min, preserving heat for 1h, then reducing the temperature to 90 ℃ at the cooling rate of 2 ℃/min, preserving heat, and scribing the target and the indium layer on the surface of the back plate by adopting a numerical control lathe; the numerical control lathe adopts a V-shaped cutter to scribe the indium layer, wherein the line width is 0.3mm, the line distance is 0.2mm, and the scribing depth is 0.2mm; the cross section of the score line can be V-shaped, and the score line can be in the form of a cross.
Putting the target material and the back plate into a binding mould, and extruding the target material and the back plate along the longitudinal direction of the product by using an extruding device when a roller is adopted; the outer diameter of a roller of the extrusion equipment is 180mm, and the height of the roller is consistent with the width of a product; the extrusion force is 3MPa, the advancing speed of the roller is 60mm/min, and the extrusion head is lifted after 2 times of reciprocating. And cooling the target material to room temperature in the air, taking out the target material, removing redundant indium material, and carrying out C-Scan detection and bonding.
Comparative example
Comparative example one:
heating the back plate and the target material on the binding platform to 170 ℃ at a heating rate of 2 ℃/min, and keeping the temperature for 30min; simultaneously melting indium ingots;
and carrying out sand blasting treatment on the binding surfaces of the back plate and the target material to ensure that the surface roughness Rz of the product reaches 45 mu m. The sand blasting medium is white corundum sand with the granularity of 60 meshes; the distance between the spray head and the surface of the product is 90mm during sand blasting, the spray head advances longitudinally according to transverse reciprocating, and the spray pressure is 0.4MPa.
The back plate which does not need to be bound is covered by high-temperature-resistant adhesive tape so as to prevent the indium material from being polluted;
uniformly coating molten indium on the binding surface of the back plate and the target, firstly, performing ultra-indium treatment for 20min at the frequency of 28KHz by using ultra-indium equipment, then paving copper wires of 0.2mm on the surfaces of the back plate and the target, paving the indium material for 30min after performing ultra-indium treatment, removing redundant indium material, and dismantling the copper wires;
combining the target binding surface with the back plate binding surface, adjusting the relative positions of the back plate and the target, and then sequentially placing a weight of 400kg/m on the surface of the target for pressing;
and cooling to room temperature at the cooling rate of 2 ℃/min, removing the pressed heavy object, cleaning redundant indium materials, and carrying out C-Scan detection bonding rate on the target material.
Comparative example two:
the operation mode is basically the same as that of the first comparative example, except that the indium material is changed into silver adhesive binding. Firstly, uniformly coating the silver colloid on the binding surface of the back plate and the target material, carrying out ultrasonic dispersion on the silver colloid by using ultrasonic equipment, then paving 0.2mm copper wires on the surfaces of the back plate and the target material, carrying out ultrasonic treatment for 30min again to flatten the silver colloid, removing the redundant silver colloid, and dismantling the copper wires;
combining the target binding surface with the back plate binding surface, adjusting the relative positions of the back plate and the target, and then sequentially placing a weight of 400kg/m on the surface of the target for pressing;
heating to 80 ℃ at the heating rate of 2 ℃/min, preserving heat for 2h, removing the pressing weight after the silver colloid is completely cured, cleaning the redundant silver colloid, and carrying out C-Scan detection on the target material to detect the bonding rate.
The examples and comparative examples were tested for performance as follows, with the results shown in table 1:
table 1: results of Performance testing
| Percentage of adhesion/%) | Bonding defect of more than 1mm | Flatness/mm | Thermal conductivity | |
| Example 1 | 98.6 | Is free of | 0.8 | Is good |
| Example 2 | 99.1 | Is free of | 0.4 | Is good |
| Comparative example 1 | 95.8 | 4 | 1.3 | Is good |
| Comparative example2 | 97.4 | 2 | 0.6 | Is poor |
C-Scan detection is carried out on the first embodiment and the first comparative example, the detection graphs are shown in figures 3 and 4, and figure 3 is a C-Scan detection graph of the first embodiment; FIG. 4 is a C-Scan detection chart of comparative example I, which is shown in FIG. 4 as being speckled, i.e., defective, and not meeting the production requirements; but not in figure 3.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (10)
1. A binding mode of an extrusion type metal plane target is characterized by comprising the following steps:
s1, ultrasonic indium coating on the surface of a backboard target: manufacturing a pair of binding molds according to the sizes of the target material and the back plate, placing the back plate and the target material on a binding heating table, heating to 160-180 ℃ at a heating rate of 2-5 ℃/min, and keeping the temperature for 0.2-1.0h; simultaneously melting the indium ingot into liquid; uniformly spreading liquid indium on the surfaces of a back plate and a target material, and ultrasonically dispersing the indium material by using an ultrasonic dispersion machine to flatten the indium material and remove redundant indium material;
s2, knurling/scribing the indium coating: reducing the temperature of the back plate and the target material coated with indium to 120-140 ℃ at the cooling rate of 1-2 ℃/min, preserving the heat for 0.5-1.5h, then reducing the temperature to 60-90 ℃ at the cooling rate of 1-5 ℃/min, preserving the heat, and knurling or scribing the indium layer on the surfaces of the target material and the back plate by adopting a knurling head or a numerical control lathe;
s3, extrusion binding: and (3) putting the target and the back plate into a binding mould, adopting roller type extrusion equipment to extrude along the longitudinal direction of the product, then cooling to room temperature in the air, and taking out the target.
2. The bonding method of the extruded metal planar target according to claim 1, wherein: in the step S1, the selected die is made of stainless steel, the wall thickness is 10mm-20mm, and the inner wall of the die is coated with high-temperature-resistant rubber so as to prevent the back plate and the target material from being scratched in the binding process.
3. The bonding method of the extrusion type metal plane target material according to claim 1, characterized in that: in the step S1, sand blasting is carried out on the binding surface of the back plate and the target material, so that the surface roughness Rz of the product reaches 30-60 mu m.
4. The bonding method of the extruded metal planar target according to claim 3, wherein: wherein the sand blasting medium is white corundum sand with the granularity of 30-80 meshes; when in sand blasting, the distance between the spray head and the surface of the product is 80mm-130mm, the spray head advances longitudinally according to the transverse reciprocating, and the spray pressure is 0.4MPa-0.6MPa.
5. The bonding method of the extruded metal planar target according to claim 1, wherein: in the step S1, the positions, which do not need to be bound, of the back plate are protected by adopting high-temperature-resistant glue so as to prevent the indium material from polluting the surface.
6. The bonding method of the extruded metal planar target according to claim 1, wherein: in the step S1, the ultrasonic frequency is 10KHz-38KHz, and the ultrasonic time is 15min-45min.
7. The method for binding an extruded metal planar target according to claim 6, wherein: during ultrasonic dispersion, 2-5 copper wires or aluminum wires with the thickness of 0.15-0.3mm are laid on the surfaces of the back plate and the target according to the size of the ultrasonic tool head, indium is continuously exceeded for 10-20min, the indium is leveled, redundant indium is removed, and the copper wires or the aluminum wires are detached.
8. The bonding method of the extruded metal planar target according to claim 1, wherein: in the step S2, knurling modes can be performed by adopting single-wheel extrusion type knurling, double-wheel extrusion type knurling, single-wheel cutting knurling, double-wheel cutting knurling, clamp pressing type knurling or three-wheel knurling, wherein the knurling interval is 0.1mm-0.3mm, and the knurling depth is 0.1mm-0.2mm.
9. The bonding method of the extruded metal planar target according to claim 8, wherein: when in scribing, the numerical control lathe adopts a V-shaped cutter or a flat-head cutter to scribe the indium layer, wherein the line width is 0.1-0.5mm, the line distance is 0.1-0.3 mm, and the scribing depth is 0.1-0.2 mm; the cross section of the score line can be V-shaped or rectangular, and the score line form can be a straight line or a cross.
10. The bonding method of the extruded metal planar target according to claim 1, wherein: in the step S3, the outer diameter of a roller of the extrusion equipment is 150-300mm, and the height of the roller is consistent with the width of a product; the extrusion force is 0.5MPa-3MPa, the advancing speed of the roller is 30mm/min-100mm/min, and the extrusion head is lifted after 1-3 times of reciprocating.
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| US7146703B2 (en) * | 2000-12-18 | 2006-12-12 | Tosoh Smd | Low temperature sputter target/backing plate method and assembly |
| US20110089030A1 (en) * | 2009-10-20 | 2011-04-21 | Miasole | CIG sputtering target and methods of making and using thereof |
| CN102181836A (en) * | 2011-04-14 | 2011-09-14 | 北京有色金属研究总院 | Method for connecting target with back plate |
| CN106032568A (en) * | 2015-03-19 | 2016-10-19 | 汉能新材料科技有限公司 | Sputtering target and binding method thereof |
| CN109136868A (en) * | 2018-09-13 | 2019-01-04 | 先导薄膜材料（广东）有限公司 | The binding method of ITO target or other ceramic targets |
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