CN115882807B - Impedance matching circuit and impedance matching method of radio frequency switch tube - Google Patents
Impedance matching circuit and impedance matching method of radio frequency switch tube Download PDFInfo
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- CN115882807B CN115882807B CN202310223271.2A CN202310223271A CN115882807B CN 115882807 B CN115882807 B CN 115882807B CN 202310223271 A CN202310223271 A CN 202310223271A CN 115882807 B CN115882807 B CN 115882807B
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Abstract
The application belongs to the technical field of radio frequency, and discloses an impedance matching circuit and an impedance matching method of a radio frequency switch tube, wherein the primary network parameters of a first matching network and a second matching network are obtained in a simulation mode, an entity circuit is built according to the primary network parameters, the network parameters of the first matching network and the second matching network of the entity circuit can be close to the optimal, and then the transmission efficiency of the entity circuit can be optimal only by carrying out a small amount of fine adjustment work on the network parameters of the first matching network and the second matching network in the entity circuit, so that the optimal network parameters are determined; compared with a matching mode of manually adjusting network parameters directly through an entity circuit, the matching method has the advantages of higher working efficiency and higher matching precision, and is more beneficial to improving the transmission efficiency of the impedance matching circuit of the radio frequency switch tube.
Description
Technical Field
The application relates to the technical field of radio frequency, in particular to an impedance matching circuit and an impedance matching method of a radio frequency switch tube.
Background
The energy transmission inside the radio frequency module and between the modules in the radio frequency system is not separated from the impedance matching, and the impedance matching is to match the impedance between each module in the system so as to achieve the purpose of better and higher-efficiency operation of the system. Particularly in an active module, the transmission efficiency of the module can be better improved by searching for a suitable power gain match. Under the condition of impedance mismatch, a transmission line is provided with a shot wave and a mapping wave at the same time, when the wave in the transmission line cannot be always in a traveling wave state, then the system can generate an antinode due to the existence of the standing wave, and the voltage at the antinode is much higher than the traveling wave voltage for transmitting the same power, so that breakdown easily occurs, the radio frequency system is extremely unstable, and even the system is damaged.
At present, when impedance matching of a radio frequency switch tube is performed, an entity circuit is generally directly built, and parameters of elements such as capacitance, inductance and the like of an impedance matching network in the entity circuit are adjusted after a signal source is added into the entity circuit so as to find out optimal parameter values of the capacitance and the inductance of the impedance matching network; the matching process has higher dependence on experience of operators, low working efficiency and poorer accuracy.
Disclosure of Invention
The invention aims to provide an impedance matching circuit and an impedance matching method of a radio frequency switch tube, which are beneficial to improving the efficiency and the precision of impedance matching.
In a first aspect, the present application provides an impedance matching circuit of a radio frequency switching tube, including an input port, a first matching network, a radio frequency switching tube, a second matching network, and an output port;
the first matching network and the second matching network are PI type resistive networks; the first matching network is connected between the input port and the grid electrode of the radio frequency switch tube and is used for performing conjugate impedance matching with the impedance of the grid electrode of the radio frequency switch tube; the second matching network is connected between the drain electrode of the radio frequency switch tube and the output port and is used for performing conjugate impedance matching with the impedance of the drain electrode of the radio frequency switch tube.
The PI type impedance network is arranged at the grid electrode and the drain electrode of the radio frequency switch tube for impedance matching, and compared with other types of impedance networks (such as L type impedance networks), the PI type impedance network has higher design flexibility, and circuit elements with proper parameter values (such as inductance value of an inductor and capacitance value of a capacitor) are more easily selected from the market, so that conjugate matching is realized, the accuracy of impedance matching is improved, and the transmission efficiency of an impedance matching circuit of the radio frequency switch tube is improved.
Preferably, the first matching network comprises a first inductor connected between the input port and the grid electrode, two ends of the first inductor are respectively connected with one end of at least one first capacitor, and the other end of the first capacitor is grounded;
the second matching network comprises a second inductor connected between the drain electrode and the output port, two ends of the second inductor are respectively connected with one end of at least one second capacitor, and the other end of the second capacitor is grounded.
Preferably, a third capacitor is connected between the input port and the first inductor; a fourth capacitor is connected between the drain electrode and the second inductor.
The third capacitor and the fourth capacitor can effectively filter the direct current component in the signal, and the influence of the direct current component on the transmission efficiency of the impedance matching circuit of the radio frequency switch tube caused by the participation of impedance matching is avoided.
Preferably, the impedance matching circuit of the radio frequency switch tube further comprises a resistance-capacitance series absorption circuit, one end of the resistance-capacitance series absorption circuit is connected between the first matching network and the grid, and the other end of the resistance-capacitance series absorption circuit is connected with the drain.
The resistance-capacitance series absorption circuit can absorb peak voltage in a circuit signal so as to protect the radio frequency switching tube, and is also a stability circuit of the radio frequency switching tube, so that the stability of the radio frequency switching tube in energy transmission can be ensured.
Preferably, the impedance matching circuit of the radio frequency switch tube further comprises a 15V direct current power supply, a filter circuit and a bias voltage circuit, wherein the 15V direct current power supply is connected with the grid electrode through the bias voltage circuit, and the 15V direct current power supply is connected with the drain electrode through the filter circuit.
Preferably, the filtering circuit includes at least one fifth capacitor and one power filtering choke, one end of each fifth capacitor and one end of each power filtering choke are connected with the 15V dc power supply, the other end of each fifth capacitor is grounded, and the other end of each power filtering choke is connected with the drain electrode.
In a second aspect, the present application provides an impedance matching method, based on the impedance matching circuit of the radio frequency switching tube described above;
the impedance matching method comprises the following steps:
A1. acquiring the grid impedance and the drain impedance of the radio frequency switch tube;
A2. based on the grid impedance and the drain impedance, preliminary network parameters of a first matching network for realizing conjugate impedance matching with the grid of the radio frequency switch tube and preliminary network parameters of a second matching network for realizing conjugate impedance matching with the drain of the radio frequency switch tube are obtained through simulation;
A3. building an entity circuit of an impedance matching circuit of the radio frequency switching tube according to the preliminary network parameters of the first matching network and the second matching network;
A4. and fine tuning network parameters of the first matching network and the second matching network of the entity circuit to determine final network parameters of the first matching network and the second matching network.
The method comprises the steps of firstly obtaining preliminary network parameters of a first matching network and a second matching network in a simulation mode, building an entity circuit according to the preliminary network parameters, enabling the network parameters of the first matching network and the second matching network of the entity circuit to be close to the optimal, and enabling the transmission efficiency of the entity circuit to be optimal only by carrying out a small amount of fine adjustment work on the network parameters of the first matching network and the second matching network in the entity circuit, so that the optimal network parameters (namely final network parameters) are determined; compared with a matching mode of manually adjusting network parameters directly through an entity circuit, the matching method has the advantages of higher working efficiency and higher matching precision, and is more beneficial to improving the transmission efficiency of the impedance matching circuit of the radio frequency switch tube.
Preferably, step A1 comprises: and obtaining the grid electrode impedance and the drain electrode impedance of the radio frequency switch tube through simulation.
Preferably, step A2 comprises:
A201. calculating the conjugate impedance of the grid and the conjugate impedance of the drain according to the grid impedance and the drain impedance;
A202. building a simulation circuit of an impedance matching circuit of the radio frequency switching tube in simulation software according to the conjugate impedance of the grid electrode and the conjugate impedance of the drain electrode;
A203. and determining the network parameters which optimize the transmission efficiency and the transmission power of the simulation circuit by adjusting the network parameters of the first matching network and the second matching network of the simulation circuit as the preliminary network parameters of the first matching network and the second matching network.
Preferably, step A4 comprises:
adjusting the capacitance value of each first capacitor and/or the inductance value of each first inductor of the first matching network to enable the actual conjugate impedance value of the first matching network to be equal to the conjugate impedance of the grid;
and adjusting the capacitance value of each second capacitor and/or the inductance value of the second inductor of the second matching network to enable the actual conjugate impedance value of the second matching network to be equal to the conjugate impedance of the drain electrode.
The beneficial effects are that: according to the impedance matching circuit and the impedance matching method of the radio frequency switching tube, the primary network parameters of the first matching network and the second matching network are obtained in a simulation mode, and the entity circuit is built according to the primary network parameters, so that the network parameters of the first matching network and the second matching network of the entity circuit are close to the optimal, and then the transmission efficiency of the entity circuit can be optimal only by carrying out a small amount of fine adjustment work on the network parameters of the first matching network and the second matching network in the entity circuit, so that the optimal network parameters are determined; compared with a matching mode of manually adjusting network parameters directly through an entity circuit, the matching method has the advantages of higher working efficiency and higher matching precision, and is more beneficial to improving the transmission efficiency of the impedance matching circuit of the radio frequency switch tube.
Drawings
Fig. 1 is a flowchart of an impedance matching method according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of an impedance matching circuit of a radio frequency switch tube according to an embodiment of the present application.
Fig. 3 is a schematic structural diagram of a first matching network.
Fig. 4 is a schematic structural diagram of a second matching network.
Fig. 5 is a schematic diagram of a series resistance-capacitance absorption circuit.
Fig. 6 is a schematic diagram of a filter circuit.
Fig. 7 is a schematic diagram of a bias voltage circuit.
Description of the reference numerals: 1. an input port; 2. a first matching network; 201. a first inductance; 202. a first capacitor; 3. a radio frequency switching tube; 4. a second matching network; 401. a second inductor; 402. a second capacitor; 5. an output port; 6. a third capacitor; 7. a fourth capacitor; 8. a resistance-capacitance series absorption circuit; 801. a sixth capacitor; 802. a first resistor; 9. a 15V DC power supply; 10. a filter circuit; 1001. a fifth capacitor; 1002. a power supply filtering choke; 11. a bias voltage circuit; 1101. a second resistor; 1102. a third resistor; 1103. a fourth resistor; 12. and driving the resistor.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 2, fig. 2 is an impedance matching circuit of a radio frequency switching tube according to some embodiments of the present application, including an input port 1, a first matching network 2, a radio frequency switching tube 3, a second matching network 4, and an output port 5;
the first matching network 2 and the second matching network 4 are PI type resistive networks; the first matching network 2 is connected between the input port 1 and the grid electrode of the radio frequency switch tube 3 and is used for performing conjugate impedance matching with the impedance of the grid electrode of the radio frequency switch tube 3; the second matching network 4 is connected between the drain of the rf switch 3 and the output port 5 and is used for conjugate impedance matching with the impedance of the drain of the rf switch 3.
The PI type impedance network is arranged at the grid electrode and the drain electrode of the radio frequency switch tube 3 for impedance matching, and compared with other types of impedance networks (such as L type impedance networks), the PI type impedance network has higher design flexibility, and circuit elements with proper parameter values (such as inductance value of an inductor and capacitance value of a capacitor) are selected from the market more easily, so that conjugate matching is realized, the accuracy of impedance matching is improved, and the transmission efficiency of an impedance matching circuit of the radio frequency switch tube is improved.
Specifically, referring to fig. 3, the first matching network 2 includes a first inductor 201 connected between the input port 1 and the gate of the radio frequency switch tube 3, two ends of the first inductor 201 are respectively connected with one end of at least one first capacitor 202, and the other end of the first capacitor 202 is grounded;
referring to fig. 4, the second matching network 4 includes a second inductor 401 connected between the drain of the radio frequency switch tube 3 and the output port 5, two ends of the second inductor 401 are respectively connected with one end of at least one second capacitor 402, and the other end of the second capacitor 402 is grounded.
The number of the first capacitors 202 at the two ends of the first inductor 201 and the capacitance value of each first capacitor 202 can be set according to actual needs, so as to meet the requirement of performing conjugate impedance matching with the impedance of the grid electrode of the radio frequency switch tube 3; the number of the first capacitors 202 at two ends of the first inductor 201 may be the same or different, and the capacitance values of the first capacitors 202 may be the same or different, which is flexible. Similarly, the number of the second capacitors 402 at two ends of the second inductor 401 and the capacitance value of each second capacitor 402 can be set according to actual needs, so as to meet the requirement of performing conjugate impedance matching with the impedance of the drain electrode of the radio frequency switch tube 3; the number of the second capacitors 402 at two ends of the second inductor 401 may be the same or different, and the capacitance values of the second capacitors 402 may be the same or different, which is flexible.
In some preferred embodiments, see fig. 2, a third capacitance 6 is connected between the input port 1 and the first inductance 201; a fourth capacitor 7 is connected between the drain of the radio frequency switch tube 3 and the second inductor 401. The third capacitor 6 and the fourth capacitor 7 can effectively filter the direct current component in the circuit signal, and avoid the influence of the direct current component on the transmission efficiency of the impedance matching circuit of the radio frequency switch tube caused by the participation of impedance matching.
In some embodiments, see fig. 2, the impedance matching circuit of the rf switching tube further includes a series resistance-capacitance absorption circuit 8, one end of the series resistance-capacitance absorption circuit 8 is connected between the first matching network 2 and the gate of the rf switching tube 3, and the other end is connected with the drain of the rf switching tube 3. The peak voltage in the circuit signal can be absorbed through the resistance-capacitance series absorption circuit 8, so that the radio frequency switch tube 3 is prevented from being damaged by the excessive voltage, the radio frequency switch tube 3 is protected, and the resistance-capacitance series absorption circuit is also a stability circuit of the radio frequency switch tube, so that the stability of the radio frequency switch tube in energy transmission can be ensured.
Here, see fig. 5, the rc series snubber circuit 8 includes at least one sixth capacitor 801 and at least one first resistor 802, and all the sixth capacitors 801 and all the first resistors 802 in the rc series snubber circuit 8 are connected in series. The number and capacitance value of the sixth capacitor 801, the number and resistance value of the first resistor 802 may be set according to actual needs; in general, the withstand voltage performance of the resistive-capacitive series snubber circuit 8 can be improved by increasing the number of first resistors 802. For example, in fig. 5, the sixth capacitor 801 is provided with one and the first resistor 802 is provided with two, but is not limited thereto.
Preferably, as shown in fig. 2, the impedance matching circuit of the radio frequency switching tube further comprises a 15V direct current power supply 9, a filter circuit 10 and a bias voltage circuit 11, wherein the 15V direct current power supply 9 is connected with the grid electrode of the radio frequency switching tube 3 through the bias voltage circuit 11, and the 15V direct current power supply 9 is connected with the drain electrode of the radio frequency switching tube 3 through the filter circuit 10.
The filter circuit 10 is used for filtering an ac component of a power supply and smoothing a dc component of a current to reduce a ripple voltage, thereby meeting the requirements of each electronic device on the dc power supply.
Specifically, referring to fig. 6, the filter circuit 10 includes at least one fifth capacitor 1001 and one power filter choke 1002, one end of each fifth capacitor 1001 and one end of each power filter choke 1002 are connected to the 15V dc power supply 9, the other end of each fifth capacitor 1001 is grounded, and the other end of each power filter choke 1002 is connected to the drain of the radio frequency switching tube 3. The number and the capacitance value of the fifth capacitors 1001 may be set according to actual needs, and when the fifth capacitors 1001 are provided with a plurality of capacitors, the capacitance value of each fifth capacitor 1001 should include a pF-level capacitor and an nF-level capacitor to filter out high-frequency and low-frequency signals. For example, in fig. 6, the fifth capacitor 1001 is provided with four, but is not limited thereto.
The bias voltage circuit 11 is used for dividing the voltage provided by the 15V direct current power supply 9 so as to provide a proper working voltage for the grid electrode of the radio frequency switch tube 3. In some embodiments, referring to fig. 7, the bias voltage circuit 11 includes a second resistor 1101, a third resistor 1102, and a fourth resistor 1103, where the second resistor 1101 and the third resistor 1102 are connected in parallel between the 15V dc power supply 9 and a first end of the fourth resistor 1103, a second end of the fourth resistor 1103 is grounded, and a gate of the rf switch tube 3 is connected to the first end of the fourth resistor 1103; the resistance values of the second resistor 1101, the third resistor 1102, and the fourth resistor 1103 may be set according to actual needs.
In some embodiments, see fig. 2, the gate of the rf switch 3 is connected to one driving resistor 12 or a plurality of driving resistors 12, and when a plurality of driving resistors 12 are provided, these driving resistors 12 are connected in parallel. The first matching network 2, the resistive-capacitive series absorption circuit 8 and the bias voltage circuit 11 are all connected to one end of the driving resistor 12 far away from the gate of the radio frequency switching tube 3.
Referring to fig. 1, the application provides an impedance matching method based on the impedance matching circuit of the radio frequency switching tube;
the impedance matching method comprises the following steps:
A1. acquiring the grid impedance and the drain impedance of the radio frequency switch tube 3;
A2. based on the grid impedance and the drain impedance, preliminary network parameters of a first matching network 2 for realizing conjugate impedance matching with the grid of the radio frequency switch tube 3 and preliminary network parameters of a second matching network 4 for realizing conjugate impedance matching with the drain of the radio frequency switch tube 3 are obtained through simulation;
A3. according to the preliminary network parameters of the first matching network 2 and the second matching network 4, building an entity circuit of an impedance matching circuit of the radio frequency switching tube;
A4. the network parameters of the first matching network 2 and the second matching network 4 of the physical circuit are trimmed to determine the final network parameters of the first matching network 2 and the second matching network 4.
The initial network parameters of the first matching network 2 and the second matching network 4 are obtained in a simulation mode, and an entity circuit is built according to the initial network parameters, so that the network parameters of the first matching network 2 and the second matching network 4 of the entity circuit are close to the optimal, and then the transmission efficiency of the entity circuit can be optimal only by carrying out a small amount of fine tuning work on the network parameters of the first matching network 2 and the second matching network 4 in the entity circuit, so that the optimal network parameters (namely the final network parameters) are determined; compared with a matching mode of manually adjusting network parameters directly through an entity circuit, the matching method has the advantages of higher working efficiency and higher matching precision, and is more beneficial to improving the transmission efficiency of the impedance matching circuit of the radio frequency switch tube.
In some embodiments, the gate impedance and the drain impedance of the rf switch tube 3 are measured by a measured method; thus step A1 comprises: the measured gate and drain impedances of the rf switch 3 are obtained. The gate impedance and the drain impedance obtained through actual measurement are high in reliability, and the matching precision is improved.
In other embodiments, the gate impedance and the drain impedance of the rf switch tube 3 are obtained by simulation; thus step A1 comprises: the gate impedance and the drain impedance of the radio frequency switching tube 3 are obtained through simulation. The process of obtaining the gate impedance and the drain impedance of the rf switch tube 3 through simulation is a prior art, and will not be described in detail herein. The grid impedance and the drain impedance of the radio frequency switch tube 3 are obtained in a simulation mode, the cost is low, and the accuracy of a simulation result is guaranteed to a certain extent.
Preferably, step A2 comprises:
A201. calculating the conjugate impedance of the grid electrode and the conjugate impedance of the drain electrode according to the grid electrode impedance and the drain electrode impedance;
A202. constructing a simulation circuit of an impedance matching circuit of the radio frequency switch tube in simulation software according to the conjugate impedance of the grid electrode and the conjugate impedance of the drain electrode;
A203. by adjusting the network parameters of the first matching network 2 and the second matching network 4 of the simulation circuit, the network parameters that optimize the transmission efficiency and the transmission power of the simulation circuit are determined as preliminary network parameters of the first matching network 2 and the second matching network 4.
For example, if the gate impedance is a1+j×b1, a1 and b1 are positive real numbers, j is an imaginary symbol, the conjugate impedance of the gate is a1-j×b1; if the drain impedance is a2+jb2, a2 and b2 are positive real numbers, the conjugate impedance of the drain is a 2-jb 2.
Wherein, but not limited to, a simulation circuit can be built in ADS simulation software.
The network parameters comprise the capacitance quantity of the corresponding matching network, the capacitance value of each capacitor and the inductance value of the inductor. In step a203, the network parameters of the second matching network 4 may be kept unchanged, and the network parameters of the first matching network 2 that make the transmission efficiency of the simulation circuit highest are determined by adjusting the network parameters of the first matching network 2, and the network parameters of the first matching network 2 are set as corresponding network parameters; then, keeping the network parameters of the first matching network 2 unchanged, determining the network parameters of the second matching network 4 which enable the transmission efficiency of the simulation circuit to be highest by adjusting the network parameters of the second matching network 4, and setting the network parameters of the second matching network 4 as corresponding network parameters; again keeping the network parameters of the second matching network 4 unchanged, determining the network parameters of the first matching network 2 which make the transmission efficiency of the simulation circuit highest by adjusting the network parameters of the first matching network 2, and setting the network parameters of the first matching network 2 as corresponding network parameters; then, keeping the network parameters of the first matching network 2 unchanged, determining the network parameters of the second matching network 4 with highest transmission efficiency of the simulation circuit by adjusting the network parameters of the second matching network 4, and setting the network parameters of the second matching network 4 as corresponding network parameters; and sequentially cycling (the network parameters of the first matching network 2 and the second matching network 4 are respectively adjusted once to one cycle) until the cycle number reaches a preset number threshold or the transmission efficiency of the simulation circuit is converged, and taking the network parameters finally set in the simulation circuit as the preliminary network parameters.
In step A3, according to the preliminary network parameters of the first matching network 2 and the second matching network 4, the network parameters of the first matching network 2 and the network parameters of the second matching network 4 in the entity circuit are set as corresponding preliminary network parameters.
In some preferred embodiments, step A4 comprises:
A401. adjusting the capacitance value of each first capacitor 202 and/or the inductance value of the first inductor 201 of the first matching network 2, so that the actual conjugate impedance value of the first matching network 2 is equal to the conjugate impedance of the grid electrode;
A402. the capacitance value of each second capacitor 402 of the second matching network 4 and/or the inductance value of the second inductor 401 are/is adjusted such that the actual conjugate impedance value of the second matching network 4 is equal to the conjugate impedance of the drain.
The impedance value of the first matching network 2 may be measured by the network analyzer while adjusting the capacitance value of each first capacitor 202 and/or the inductance value of the first inductor 201 of the first matching network 2 until the measured impedance value of the first matching network 2 is equal to the conjugate impedance of the gate (generally, when the measured deviation between the impedance value of the first matching network 2 and the conjugate impedance of the gate is within the tolerance range, the measured deviation is considered to be equal to the conjugate impedance of the gate).
Similarly, the impedance value of the second matching network 4 may be measured by the network analyzer while adjusting the capacitance value of each second capacitor 402 of the second matching network 4 and/or the inductance value of the first inductor 201 until the measured impedance value of the second matching network 4 is equal to the conjugate impedance of the drain (generally, when the measured deviation between the impedance value of the second matching network 4 and the conjugate impedance of the drain is within the tolerance range, the two are considered to be equal).
In theory, when the actual conjugate impedance value of the first matching network 2 is equal to the conjugate impedance of the gate and the actual conjugate impedance value of the second matching network 4 is equal to the conjugate impedance of the drain, the transmission efficiency and the transmission power of the physical circuit are optimal. Therefore, the network parameters of the first matching network 2 and the second matching network 4 of the entity circuit after trimming are completed can be used as final network parameters.
In practical applications, the gate impedance and the drain impedance of the rf switch tube 3 are obtained through actual measurement or simulation, so that the calculated conjugate impedances of the gate and the drain have certain errors, and the transmission efficiency and the transmission power of the physical circuit may not be optimal, so the step a402 may further include:
A403. the inductance value of the second inductor 401 of the second matching network 4 is fine-tuned to optimize the transmission efficiency and the transmission power of the physical circuit.
Whereby the network parameters of the first matching network 2 and the second matching network 4 after step a403 are taken as final network parameters.
In fact, a large number of comparative experiments show that adjusting the inductance value of the inductor can more effectively improve the transmission efficiency of the physical circuit than adjusting the capacitance value of the capacitor, and after step a402, adjusting only the inductance value of the second inductor 401 is beneficial to making the transmission efficiency and the transmission power of the physical circuit better than adjusting only the inductance value of the first inductor 201; the adjustment of the inductance value of the second inductor 401 is a key factor for improving the output power and the efficiency, the second inductor 401 corresponding to the optimal power point is locked according to the simulation result, and the output power is improved by locally adjusting the inductance value of the second inductor 401 in practice, so that only the inductance value of the second inductor 401 is finely adjusted after the step A402, on one hand, the fine adjustment process can be simplified, and on the other hand, the final transmission efficiency and the higher transmission power of the circuit can be ensured.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The foregoing is merely exemplary embodiments of the present application and is not intended to limit the scope of the present application, and various modifications and variations may be suggested to one skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (2)
1. The impedance matching method is characterized by comprising an impedance matching circuit based on a radio frequency switch tube, wherein the impedance matching circuit of the radio frequency switch tube comprises an input port (1), a first matching network (2), a radio frequency switch tube (3), a second matching network (4) and an output port (5);
the first matching network (2) and the second matching network (4) are PI type resistive networks; the first matching network (2) is connected between the input port (1) and the grid electrode of the radio frequency switch tube (3) and is used for performing conjugate impedance matching with the impedance of the grid electrode of the radio frequency switch tube (3); the second matching network (4) is connected between the drain electrode of the radio frequency switch tube (3) and the output port (5) and is used for performing conjugate impedance matching with the impedance of the drain electrode of the radio frequency switch tube (3);
the device further comprises a resistance-capacitance series absorption circuit (8), wherein one end of the resistance-capacitance series absorption circuit (8) is connected between the first matching network (2) and the grid electrode, and the other end of the resistance-capacitance series absorption circuit is connected with the drain electrode; the resistance-capacitance series absorption circuit (8) comprises at least one sixth capacitor (801) and at least one first resistor (802), and all the sixth capacitors (801) and all the first resistors (802) in the resistance-capacitance series absorption circuit (8) are connected in series;
the first matching network (2) comprises a first inductor (201) connected between the input port (1) and the grid electrode, two ends of the first inductor (201) are respectively connected with one end of at least one first capacitor (202), and the other end of the first capacitor (202) is grounded;
the second matching network (4) comprises a second inductor (401) connected between the drain electrode and the output port (5), two ends of the second inductor (401) are respectively connected with one end of at least one second capacitor (402), and the other end of the second capacitor (402) is grounded;
the impedance matching method comprises the following steps:
A1. acquiring the grid impedance and the drain impedance of the radio frequency switch tube (3);
A2. based on the grid impedance and the drain impedance, preliminary network parameters of a first matching network (2) which is matched with the grid of the radio frequency switch tube (3) to realize conjugate impedance matching and preliminary network parameters of a second matching network (4) which is matched with the drain of the radio frequency switch tube (3) to realize conjugate impedance matching are obtained through simulation;
A3. according to the preliminary network parameters of the first matching network (2) and the second matching network (4), building a physical circuit of an impedance matching circuit of the radio frequency switching tube;
A4. trimming network parameters of the first matching network (2) and the second matching network (4) of the entity circuit to determine final network parameters of the first matching network (2) and the second matching network (4);
the step A2 comprises the following steps:
A201. calculating the conjugate impedance of the grid and the conjugate impedance of the drain according to the grid impedance and the drain impedance; if the grid impedance is a1+j×b1, a1 and b1 are positive real numbers, j is an imaginary symbol, the conjugate impedance of the grid is a1-j×b1; if the drain impedance is a2+jb2, a2 and b2 are positive real numbers, the conjugate impedance of the drain is a 2-jb 2;
A202. building a simulation circuit of an impedance matching circuit of the radio frequency switching tube in simulation software according to the conjugate impedance of the grid electrode and the conjugate impedance of the drain electrode;
A203. determining, by adjusting network parameters of the first matching network (2) and the second matching network (4) of the simulation circuit, the network parameters that optimize the transmission efficiency and the transmission power of the simulation circuit as the preliminary network parameters of the first matching network (2) and the second matching network (4);
step A4 includes:
-adjusting the capacitance value of each first capacitor (202) and/or the inductance value of a first inductor (201) of the first matching network (2) such that the actual output impedance value of the first matching network (2) is equal to the conjugate impedance of the gate;
-adjusting the capacitance value of each second capacitance (402) and/or the inductance value of a second inductance (401) of the second matching network (4) such that the actual input impedance value of the second matching network (4) is equal to the conjugate impedance of the drain;
only the inductance value of the second inductance (401) of the second matching network (4) is fine-tuned to optimize the transmission efficiency and transmission power of the physical circuit.
2. The impedance matching method according to claim 1, wherein step A1 comprises: and obtaining the grid impedance and the drain impedance of the radio frequency switch tube (3) through simulation.
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