CN115640770A - S-band low noise amplifier design method for network matching through Smith chart - Google Patents
S-band low noise amplifier design method for network matching through Smith chart Download PDFInfo
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Abstract
The invention discloses a method for designing an S-band low-noise amplifier for network matching through a Smith chart. The function of ADS software is fully utilized, and a large amount of calculation and design work which is manually finished in the past is replaced, so that the working efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of integrated circuit design, designs a low noise amplifier, and particularly relates to a method for designing an S-band low noise amplifier for network matching through a Smith chart.
Background
The application field of the wire communication in the modern times is quite wide, the wire communication occupies a very important position in the life of people, and wireless devices such as mobile phones, wireless televisions and the like are widely popularized in the life of people. The convenience and diversity of functions brought by wireless communication have made human beings highly interested in it, and have also promoted its development. On the other hand, wireless communication brings convenience, so that it has been developed rapidly and has taken an important position in human society.
The low noise amplifier is an important component of the front end of the radio frequency receiver, the main function of the low noise amplifier is to amplify a weak signal received by an antenna, and noise interference is reduced as much as possible so as to improve the receiving sensitivity of the system. With the rapid development of wireless communication technology and radar technology, people put forward higher requirements on system sensitivity. Therefore, the development of a microwave radio frequency amplifier with high gain, wide frequency band and low noise has become one of the core technologies of modern microwave circuit design.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a method for designing an S-band low-noise amplifier for network matching through a Smith chart. The function of ADS software is fully utilized, and a large amount of calculation and design work which is manually finished in the past is replaced, so that the working efficiency is improved.
The invention is realized by the following technical scheme:
a design method of an S-band low noise amplifier for network matching through a Smith chart comprises the following steps:
step one, selecting a transistor
Selecting transistor ATF54143, determining transistor DC operating point as V dd ＝5V，V ds ＝3V，I ds ＝20mA；
Step two, designing direct current bias
Respectively connecting a grid electrode, a drain electrode and a source electrode of the ATF54143 with a grid electrode, a drain electrode and a source electrode of a model DA _ FETBias model provided with a direct-current bias circuit, and connecting a drain electrode power supply voltage of the DA _ FETBias model with a direct-current power supply voltage to finally form the bias circuit; determining a static operating point V according to the step one dd ＝5V，V ds ＝3V，I ds Setting a DA _ FETBias model to generate a bias sub-circuit, wherein the model is =20 mA; the sub-circuit replaces a DA _ FETBias model to be reconnected, P1 is connected with the grid electrode of the ATF54143, P2 is connected with the drain electrode, P4 is connected with a direct current power supply, and the source electrode is grounded;
step three, stability analysis
A negative feedback method is introduced in the circuit, and stability analysis is carried out on the amplifier in ADS by using a stability decision coefficient Stab _ face(s) or Stab _ meas(s);
the stable conditions of the amplifier are:
wherein Δ = S 11 S 22 -S 12 S 21 ,K>1 is a stable state, and the absolute stability is achieved if the three formulas are met; k is a stability factor; s 11 Is the input end reflection coefficient; s 22 Is the output end reflection coefficient; s 12 The transmission coefficient from the output end to the input end when the input ends are matched; s 21 And the transmission coefficient from the input end to the output end is matched when the output end is matched.
Further, the specific process of stability analysis is as follows: step one, adding small inductors as negative feedback to two source electrodes of the ATF54143, and adjusting the value of the negative feedback to obtain a value of L of 0.45nH, and finally obtaining: at 2.45GHz, the stability factor S is increased to 1.010, K >; secondly, the transistor grid choking circuit adopts a series inductor of an ATC0806WL6R8 and a bypass capacitor of an ATC600S6R8 to be grounded, the drain choking circuit adopts a series inductor of an ATC0805WL220 and a bypass capacitor of an ATC600S270 to be grounded, and the direct current blocking capacitors at two ends are grounded through the ATC600S270, so that the direct current bias is finally achieved and radio frequency choking signals are passed through; and thirdly, converting the two small inductors of the transistor into a short-circuit microstrip line to obtain a circuit schematic diagram.
The formula for calculating the microstrip line is
Where l is the length of the microstrip line (unit inch); l is the inductance value (in nH); z 0 The characteristic impedance of the microstrip line on the PCB is selected, an R04003 radio frequency board is selected to provide relevant parameter information of the PCB, and the Z is calculated according to the relevant parameter information of the PCB and the width W =0.5mm of the microstrip line 0 =80Ohm. And calculating according to a formula to obtain l =0.036inch =0.92mm.
Step four, matching network design
The smith chart comprehensive tool in the ADS simulation software toolkit is used for realizing automatic matching network design, noise coefficient and input matching and maximum gain output matching are carried out, an input sub-circuit and an output sub-circuit are added into a schematic diagram through the input matching and the output matching, and coupling capacitors of an input end and an output end are respectively placed at the input end and the output end;
the specific process is as follows:
inserting two controls of Nscircle and Gacircle into the schematic diagram obtained in the step three, and performing simulation to obtain an equal gain circle and a noise coefficient circle; in order to achieve the minimum noise figure, a matching network is designed by using a matching tool DA _ SmithHartMatch in ADS software, and in order to match the conjugate impedance of the optimal source reflection coefficient to the input impedance, the load impedance is set to be Γ opt * 23.35+ j 14.8Ohm with the source impedance set to 50Ohm; and after the relevant parameters are set, microstrip line matching is carried out to obtain an input matching sub-circuit.
Output matching only considers gain, by adding Zin controls and changing to S 22 The impedance of the output end is simulated and confirmedThe constant load impedance ZL is 50Ohm, the source impedance Zg is 59.923+ j 39.072, a matching network is designed by utilizing a matching tool DA _ SmithCHartMatch in ADS software, and microstrip line matching is carried out, so that the microstrip line input matching circle output matching sub-circuit is obtained.
Step five, overall optimization design
Debugging and optimizing the microstrip line of the circuit obtained in the step four through Tuning, and finally obtaining a line schematic diagram of the low-noise amplifier;
step six, simulation verification
And (4) simulating the line schematic diagram obtained in the fifth step, and verifying that the low noise amplifier has the gain of 16.471dB, the minimum noise coefficient of 0.446dB and all the input and output reflection coefficients of less than-15 dB and the input and output standing-wave ratios of about 1.3dB, and the stability coefficient K is more than 1, and is unconditionally stable when the low noise amplifier is at 2.45 GHz.
Compared with the prior art, the invention has the following beneficial effects:
the circuit is analyzed from the aspects of bias circuit, noise optimization, gain, input and output impedance matching and the like, is simulated by ADS simulation software, and on the basis, the stability of the circuit is analyzed and simulated and optimized with a Smith chart. A center frequency is designed to be 2.45GHz, a gain is 16.471dB, a minimum noise coefficient is 0.446dB and is constructed into a structure of 0.6dB, input and output reflection coefficients are all smaller than-15 dB, input and output standing-wave ratios are all about 1.3dB, a stability coefficient K is larger than 1, and unconditional stability is achieved.
Drawings
FIG. 1 is a schematic block diagram of the overall system of the present invention;
FIG. 2 is a simulation diagram of the parameters associated with the transistor of the present invention;
FIG. 3 is a schematic diagram of the bias circuit of the present invention;
FIG. 4 is a schematic diagram of the present invention incorporating a choke inductor and a DC blocking capacitor;
FIG. 5 is a schematic diagram of the present invention after the ideal device is changed into an actual device;
FIG. 6 is a graph of stability factor and maximum gain for the present invention;
FIG. 7 is a schematic diagram of the invention after the small inductor is replaced by a microstrip line;
FIG. 8 is a schematic diagram of the present invention with two controls, nscircle and Gacircle added;
FIG. 9 is an equal gain circle and noise coefficient circle image obtained by simulation after adding Nscircle and Gacircle;
fig. 10 is a microstrip line input matching circle image of the present invention;
fig. 11 is a microstrip line output matching circular image of the present invention;
FIG. 12 is a final schematic circuit diagram of the low noise amplifier of the present invention;
FIG. 13 is an input-output standing wave ratio image of a final simulation of the present invention;
FIG. 14 is a final simulated minimum noise figure image of the present invention;
FIG. 15 is a final simulated stability factor image of the present invention;
FIG. 16 is a gain image of the final simulation of the present invention;
FIG. 17 is a gain curve image of a final simulation of the present invention;
FIG. 18 is a schematic representation of the study of a two-port network using S-parameters.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The design method of the S-band low-noise amplifier for network matching through the Smith chart comprises the following steps:
step one, selecting a transistor
In the embodiment, a transistor ATF54143 is selected, a simulation graph of parameters of the transistor ATF54143 is shown in FIG. 2, and according to simulation results, the direct-current working point of the transistor is determined to be V dd ＝5V，V ds ＝3V，I ds ＝20mA；
Step two, designing direct current bias
Connecting a grid electrode, a drain electrode and a source electrode of the ATF54143 with a grid electrode, a drain electrode and a source electrode of a model DA _ FETBias model provided with a direct-current bias circuit respectively, and connecting a drain electrode power supply voltage of the DA _ FETBias model with a direct-current power supply voltage to finally form the bias circuit; determining a static operating point V according to step one dd ＝5V，V ds ＝3V，I ds Setting a DA _ FETBias model to generate a bias sub-circuit, wherein the model is =20 mA; the sub-circuit replaces a DA _ FETBias model to be reconnected, P1 is connected with the grid electrode of the ATF54143, P2 is connected with the drain electrode, P4 is connected with a direct current power supply, and the source electrode is grounded, so that a bias circuit schematic diagram shown in FIG. 3 is obtained;
step three, stability analysis
In this embodiment, the S parameter is used to study a two-port network, and for a linear network, a linear relationship exists between a normalized incident wave and a normalized reflected wave, as shown in fig. 18, a linear relationship equation can be written as:
in the formula (I), the compound is shown in the specification,
scattering matrix, abbreviated as [ S ], for two-port networks]The significance of each parameter of the matrix is as follows:
At microwave frequencies, port matching is easier to achieve and safer to test under port matching than open and short circuits of ports.
In this embodiment, the stable conditions of the amplifier are:
wherein Δ = S 11 S 22 -S 12 S 21 ,K>1 is a stable state, and the absolute stability is achieved if the three formulas are met; k is a stability factor; s 11 Is the input end reflection coefficient; s. the 22 Is the output end reflection coefficient; s 12 The transmission coefficient from the output end to the input end when the input ends are matched; s. the 21 And the transmission coefficient from the input end to the output end is matched when the output end is matched.
For the bias circuit shown in fig. 3, not only a static operating point needs to be set, but also a radio frequency choke circuit is added between a direct current path and an alternating current path of the amplifier (a DC _ Feed choke inductor is added between the direct current bias circuit and a radio frequency device, and a DC _ Block blocking capacitor is added between the direct current circuit and a Term port), so as to prevent a high-frequency signal from entering a direct current power supply network to ensure normal transmission of the high-frequency signal, and obtain a schematic diagram of adding the choke inductor and the blocking capacitor shown in fig. 4;
then adding small inductors into two source electrodes of the ATF54143 in the obtained circuit as negative feedback, and analyzing the stability of the amplifier by using a stability judgment coefficient Stab _ face(s) or Stab _ meas(s) in ADS, wherein the specific process is as follows: step one, adding small inductors as negative feedback to two source electrodes of the ATF54143, and adjusting the value of the negative feedback to obtain a value of L of 0.45nH, and finally obtaining: at 2.45GHz, the stability factor S is increased to 1.010, K >; secondly, grounding a transistor grid choke circuit by adopting a series inductor of ATC0806WL6R8 and a bypass capacitor of ATC600S6R8, grounding a drain choke circuit by adopting a series inductor of ATC0805WL220 and a bypass capacitor of ATC600S270, grounding DC blocking capacitors at two ends by adopting ATC600S270, obtaining a schematic diagram after an ideal component is changed into an actual component as shown in figure 5, and finally achieving the purpose of enabling DC bias to pass through a choke radio frequency signal at the same time, wherein as shown in a stability coefficient and maximum gain curve diagram of figure 6, after the ideal component is changed into the actual component, both the stability coefficient and the maximum gain meet design requirements; and thirdly, converting the two small inductors of the transistor into a short-circuit microstrip line to obtain a schematic diagram of the small inductor which is converted into the microstrip line as shown in fig. 7.
Wherein the formula for calculating the microstrip line is
Where l is the length of the microstrip line (unit inch); l is the inductance value (in nH); z 0 The characteristic impedance of the microstrip line on the PCB is selected, an R04003 radio frequency board is selected to provide relevant parameter information of the PCB, and the Z is calculated according to the relevant parameter information of the PCB and the width W =0.5mm of the microstrip line 0 =80Ohm. And calculating according to a formula to obtain l =0.036inch =0.92mm.
Step four, matching network design
Realizing automatic matching network design by utilizing a smith chart comprehensive tool in an ADS simulation software toolkit, carrying out noise coefficient and input matching and maximum gain output matching, adding an input sub-circuit and an output sub-circuit into a schematic diagram through the input matching and the output matching, and respectively placing coupling capacitors of an input end and an output end into the input end and the output end;
the specific process is as follows:
inserting two controls of Nscircle and Gacircle into the schematic diagram obtained in the step three to obtain a schematic diagram of the two controls of Nscircle and Gacircle which is added as shown in FIG. 8, and performing simulation to obtain an equal gain circle and a noise coefficient circle as shown in FIG. 9;
in fig. 8, m4 is the input impedance of the lna at maximum gain, where a gain of 16.372dB is obtained; m5 is the input impedance of the LNA with the minimum noise figure, which is 0.450dB. In order to achieve a minimum noise figure, an optimum source reflection coefficient gamma is added to the input of the transistor opt And an input matching network is added to convert the gamma opt * (23.35 + j 14.8 Ohm) to the input impedance (50 Ohm);
the matching network is designed by using a matching tool DA _ SmithHartMatch in ADS software, and in order to match the conjugate impedance of the optimal source reflection coefficient to the input impedance, the load impedance is set to Γ opt * 23.35+ j 14.8ohm, with the source impedance set to 50Ohm; after the relevant parameters are set, microstrip line matching is carried out to obtain a microstrip line input matching circular image shown in fig. 10, and then an input matching sub-circuit is obtained.
Output matching only considers gain, by adding Zin controls and changing to S 22 And (3) simulating the impedance of an output end, determining that the load impedance ZL is 50Ohm, and the source impedance Zg is 59.923+ j 39.072, designing a matching network by using a matching tool DA _ SmithChartMatch in ADS software, and matching microstrip lines to obtain a microstrip line output matching circular image shown in figure 11, thereby obtaining an output matching sub-circuit.
Step five, integral optimization design
Debugging and optimizing the microstrip line of the circuit obtained in the fourth step through Tuning, and finally obtaining a line schematic diagram of the low noise amplifier, as shown in fig. 12, the sources S1 and S2 of the transistor ATF54143 are connected with the resistors TL1 and TL2 respectively and then grounded; the bypass capacitor SNP1 is connected with the terminal load Term1 in series, then is connected with the resistor TL4 in parallel, then is connected with the resistor TL3 in series and then is connected with the grid electrode of the ATF 54143; the inductor R3 is connected with the bypass capacitor SNP2 in parallel, then connected with the series inductor SNP4 in series and then connected with the grid electrode of the ATF 54143; the inductors R3, R2 and R1 are connected in series, then connected in parallel with the bypass capacitor SNP5, then connected in series with the series inductor SNP3 and then connected to the drain electrode of the ATF 54143; the bypass capacitor SNP6 is connected in series with the terminal load Term2, then connected in parallel with the resistor TL5 and then connected in series with the resistor TL6 to the drain of the ATF 54143.
Step six, simulation verification
And (4) simulating the line schematic diagram obtained in the fifth step, wherein simulation results are shown in FIGS. 13-17, and verify that the low noise amplifier has the gain of 16.471dB, the minimum noise coefficient of 0.446dB and is less than-15 dB, the input-output standing-wave ratios are all about 1.3dB, the stability coefficient K is more than 1 and unconditionally stable.
Claims (6)
1. A design method of an S-band low noise amplifier for network matching through a Smith chart is characterized by comprising the following steps:
step one, selecting a transistor
Selecting transistor ATF54143, determining transistor DC operating point as V dd ＝5V，V ds ＝3V，I ds ＝20mA；
Step two, designing direct current bias
Connecting a grid electrode, a drain electrode and a source electrode of the ATF54143 with a grid electrode, a drain electrode and a source electrode of a model DA _ FETBias model provided with a direct-current bias circuit respectively, and connecting a drain electrode power supply voltage of the DA _ FETBias model with a direct-current power supply voltage to finally form the bias circuit; determining a static operating point V according to the step one dd ＝5V，V ds ＝3V，I ds Setting a DA _ FETBias model to generate a bias sub-circuit, wherein the model is =20 mA; the sub-circuit replaces a DA _ FETBias model to be reconnected, P1 is connected with the grid electrode of the ATF54143, P2 is connected with the drain electrode, P4 is connected with a direct current power supply, and the source electrode is grounded;
step three, stability analysis
A negative feedback method is introduced in the circuit, and stability analysis is carried out on the amplifier in ADS by using a stability decision coefficient Stab _ face(s) or Stab _ meas(s);
step four, matching network design
Realizing automatic matching network design by utilizing a smith chart comprehensive tool in an ADS simulation software toolkit, carrying out noise coefficient and input matching and maximum gain output matching, adding an input sub-circuit and an output sub-circuit into a schematic diagram through the input matching and the output matching, and respectively placing coupling capacitors of an input end and an output end into the input end and the output end;
step five, overall optimization design
Debugging and optimizing the microstrip line of the circuit obtained in the fourth step through Tuning, and finally obtaining a line schematic diagram of the low-noise amplifier;
step six, simulation verification
And (4) simulating the line schematic diagram obtained in the step five, and verifying that the gain of the low noise amplifier is 16.471dB, the minimum noise coefficient is 0.446dB and is less than-15 dB, the input-output reflection coefficients are all less than-15 dB, the input-output standing-wave ratios are all about 1.3dB, the stability coefficient K is more than 1, and the unconditional stability is realized.
2. The design method of the S-band low noise amplifier for network matching by the Smith chart according to claim 1, wherein: in the stability analysis of the third step, the stability conditions of the amplifier are as follows:
wherein Δ = S 11 S 22 -S 12 S 21 ,K>1 is in a stable state, and the absolute stability is achieved if the three formulas are met; k is a stability factor; s. the 11 Is the input end reflection coefficient; s. the 22 Is the output end reflection coefficient; s 12 The transmission coefficient from the output end to the input end when the input ends are matched; s. the 21 And the transmission coefficient from the input end to the output end when the output ends are matched.
3. The design method of the S-band low noise amplifier for network matching by the Smith chart according to any one of the claims 1 or 2, wherein: the third step of stability analysis comprises the following specific processes: step one, adding small inductors as negative feedback to two source electrodes of the ATF54143, and adjusting the value of the negative feedback to obtain a value of L of 0.45nH, and finally obtaining: at 2.45GHz, the stability factor S is increased to 1.010, K >; secondly, grounding a transistor grid electrode choke circuit by adopting a series inductor of ATC0806WL6R8 and a bypass capacitor of ATC600S6R8, grounding a drain electrode choke circuit by adopting a series inductor of ATC0805WL220 and a bypass capacitor of ATC600S270, and grounding DC blocking capacitors at two ends by adopting ATC600S270, so that the purpose of enabling the DC bias to pass through a choke radio frequency signal at the same time is finally achieved; and thirdly, converting the two small inductors of the transistor into a short-circuit microstrip line to obtain a circuit schematic diagram.
4. The design method of the S-band low noise amplifier for network matching by the Smith chart according to claim 3, wherein: the formula for calculating the microstrip line is
Wherein l is the length of the microstrip line; l is an inductance value; z is a linear or branched member 0 Namely the characteristic impedance of the microstrip line on the PCB, an R04003 radio frequency board is selected to provide relevant parameter information of the PCB, and Z is calculated according to the relevant parameter information of the PCB and the width W =0.5mm of the microstrip line 0 =80Ohm. And calculating according to a formula to obtain l =0.036inch =0.92mm.
5. The method for designing an S-band low noise amplifier for network matching by a Smith chart according to claim 1, wherein: in the design of the matching network, inserting two controls, namely Nscircle and Gacircle, into the schematic diagram obtained in the step three, and simulating to obtain an equal gain circle and a noise coefficient circle; in order to achieve the minimum noise coefficient, a matching network is designed by using a matching tool DA _ SmithPhartMatch in ADS software, and in order to reflect the optimal source reflection systemSeveral conjugate impedances are matched to the input impedance, so the load impedance is set to Γ opt * 23.35+ j 14.8ohm, with the source impedance set to 50Ohm; and after the relevant parameters are set, microstrip line matching is carried out to obtain an input matching sub-circuit.
6. The method for designing an S-band low noise amplifier for network matching by a Smith chart according to claim 1, wherein: in the design of the matching network in the step four, only gain is considered in output matching, and by adding Zin controls and changing the control into S 22 And (3) simulating the impedance of an output end, determining that the load impedance ZL is 50Ohm, the source impedance Zg is 59.923+ j 39.072, designing a matching network by using a matching tool DA _ SmithChart match in ADS software, matching microstrip lines, and outputting a matching sub-circuit.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882807A (en) * | 2023-03-09 | 2023-03-31 | 季华实验室 | Impedance matching circuit and impedance matching method of radio frequency switch tube |
| CN116187098A (en) * | 2023-04-23 | 2023-05-30 | 安徽福晴精密体检装备有限公司 | Method and system for quantitatively calculating parameters of magnetic resonance coil circuit element |
| CN116317988A (en) * | 2023-05-24 | 2023-06-23 | 广东工业大学 | Reconfigurable broadband low-noise amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07240649A (en) * | 1994-02-28 | 1995-09-12 | Toshiba Corp | Agc circuit |
| EP2515373A1 (en) * | 2011-04-20 | 2012-10-24 | Centre National D'etudes Spatiales | Compact, lightweight frequency duplexer |
| CN106788278A (en) * | 2016-12-01 | 2017-05-31 | 西北工业大学 | KU Band LNAs |
| CN211656096U (en) * | 2020-04-08 | 2020-10-09 | 重庆航天火箭电子技术有限公司 | S-band high-gain high-integration low-noise amplification module |
-
2022
- 2022-10-19 CN CN202211278432.XA patent/CN115640770A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07240649A (en) * | 1994-02-28 | 1995-09-12 | Toshiba Corp | Agc circuit |
| EP2515373A1 (en) * | 2011-04-20 | 2012-10-24 | Centre National D'etudes Spatiales | Compact, lightweight frequency duplexer |
| CN106788278A (en) * | 2016-12-01 | 2017-05-31 | 西北工业大学 | KU Band LNAs |
| CN211656096U (en) * | 2020-04-08 | 2020-10-09 | 重庆航天火箭电子技术有限公司 | S-band high-gain high-integration low-noise amplification module |
Non-Patent Citations (3)
| Title |
|---|
| ASH_GUARDIAN: "基于ADS的低噪声放大电路设计", pages 1 - 33, Retrieved from the Internet <URL:https://blog.csdn.net/ASH_GUARDIAN/article/details/117434013> * |
| 冬冬甜甜枪: "01、低噪声放大电路设计——ATF-54143", pages 1 - 12, Retrieved from the Internet <URL:https://blog.csdn.net/weixin_42340855/article/details/125562485> * |
| 闫梦婕: "S波段两级平衡式低噪声放大器的研究", 中国优秀硕士学位论文全文数据库, no. 2, pages 135 - 809 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115882807A (en) * | 2023-03-09 | 2023-03-31 | 季华实验室 | Impedance matching circuit and impedance matching method of radio frequency switch tube |
| CN116187098A (en) * | 2023-04-23 | 2023-05-30 | 安徽福晴精密体检装备有限公司 | Method and system for quantitatively calculating parameters of magnetic resonance coil circuit element |
| CN116187098B (en) * | 2023-04-23 | 2023-07-28 | 安徽福晴精密体检装备有限公司 | Method and system for quantitatively calculating parameters of magnetic resonance coil circuit element |
| CN116317988A (en) * | 2023-05-24 | 2023-06-23 | 广东工业大学 | Reconfigurable broadband low-noise amplifier |
| CN116317988B (en) * | 2023-05-24 | 2023-08-01 | 广东工业大学 | Reconfigurable broadband low-noise amplifier |
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