CN114123995A - Novel concurrent dual-waveband radio frequency power amplifier - Google Patents

Novel concurrent dual-waveband radio frequency power amplifier Download PDF

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CN114123995A
CN114123995A CN202111457584.1A CN202111457584A CN114123995A CN 114123995 A CN114123995 A CN 114123995A CN 202111457584 A CN202111457584 A CN 202111457584A CN 114123995 A CN114123995 A CN 114123995A
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microstrip line
band
concurrent dual
network
power amplifier
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高明明
徐高阳
南敬昌
张雪曼
李敏
许文源
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Liaoning Technical University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Microelectronics & Electronic Packaging (AREA)
  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a novel concurrent dual-band radio frequency power amplifier, which comprises two sections of first microstrip lines for welding ports, a DC blocking capacitor loaded at the other end of the first microstrip lines, a T-shaped microstrip line network loaded at the other end of the DC blocking capacitor, a second microstrip line loaded at the other end of the T-shaped microstrip line network, a transistor positioned in the middle and a stabilizing network, wherein the other end of the second microstrip line is connected with an L-shaped microstrip line network, the transistor is connected with a concurrent dual-band biasing circuit, the concurrent dual-band biasing circuit is connected with a bypass capacitor in parallel, and the transistor is connected with the stabilizing network; the stabilizing network is connected with the concurrent dual-band bias circuit in parallel, the T-shaped microstrip line network is connected with the blocking capacitor in parallel, and the bypass capacitor is connected between the power supply and the second microstrip line in parallel. The structure of the invention has simple solving, large solving space and less microstrip lines, which is beneficial to miniaturization, and the concurrent dual-band power amplifier can realize the power amplification of two frequency bands of 2.4G and 2.8G.

Description

Novel concurrent dual-waveband radio frequency power amplifier
Technical Field
The invention belongs to the technical field of radio frequency communication, and particularly relates to a novel concurrent dual-band radio frequency power amplifier.
Background
Radio frequency power amplifiers (RF PAs) are an important component of various wireless transmitters. In the front stage circuit of the transmitter, the radio frequency signal power generated by the modulation oscillation circuit is very small, and the radio frequency signal can be fed to an antenna to be radiated after sufficient radio frequency power is obtained through a series of amplifying-buffering stage, intermediate amplifying stage and final power amplifying stage. In order to obtain a sufficiently large radio frequency output power, a radio frequency power amplifier must be employed. Communication rate and bandwidth are gradually increased, but frequency bands used by large operators are discontinuous, and dual-band operation is carried out. Various communication systems need to be continuously updated to adapt to multi-standard communication protocols. Multimode communication also requires different frequency bands of communication. The performance of the power amplifier directly influences the performance of the whole communication system, and efficient concurrent dual-band is necessary for energy conservation and green sustainable development. For the communication requirements of multi-mode and multi-band, the concurrent multi-band is more advantageous. And the concurrent multi-band is also the basis for realizing the reconfigurable power amplifier and the multi-mode multi-band power amplifier.
The concurrent dual-band matching circuit is a key link of design. The matching circuit directly affects the output power and power added efficiency of the power amplifier. Minimum noise figure is required for low noise amplifier matching, conjugate matching is required for small signal amplifier matching circuit design, and optimal matching of matching circuits is required for large signal amplifiers. The size of the power amplifier is mainly formed by microstrip lines of a matching circuit, and the design of the matching circuit is very important.
The current matching circuit structure capable of realizing concurrent dual bands is as follows: 1. three microstrip lines are connected in series to achieve concurrent dual-band, but the solution is complex and the realization is complex. The structure of the T-type microstrip line network and the Pi-type microstrip line network is complex to solve, sometimes needs a double-T structure to realize and does not have a solution.
Disclosure of Invention
Based on the defects of the prior art, the technical problem to be solved by the invention is to provide a novel concurrent dual-band radio frequency power amplifier, which is simple in structural solution, large in solution space, small in number of microstrip lines and beneficial to miniaturization, and can realize power amplification of two frequency bands of 2.4G and 2.8G.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a novel concurrent dual-band radio frequency power amplifier, which comprises two sections of first microstrip lines for welding ports, a DC blocking capacitor loaded at the other end of the first microstrip lines, a T-shaped microstrip line network loaded at the other end of the DC blocking capacitor, a second microstrip line loaded at the other end of the T-shaped microstrip line network, a transistor positioned in the middle and a stabilizing network, wherein the other end of the second microstrip line is connected with an L-shaped microstrip line network, the transistor is connected with a concurrent dual-band biasing circuit, the concurrent dual-band biasing circuit is connected with a bypass capacitor in parallel, and the transistor is connected with the stabilizing network; the stabilizing network is connected in parallel with the concurrent dual-band bias circuit, the stabilizing network is connected in series with the L-shaped microstrip line network, the T-shaped microstrip line network is connected in parallel with the DC blocking capacitor, and the bypass capacitor is connected in parallel between the power supply and the second microstrip line.
Optionally, the transistor is CGH40010F in model number, and can amplify a radio frequency signal in a frequency range of 0-6G; the blocking capacitor can block direct current signals and direct current alternating current signals.
Optionally, the concurrent dual-band bias circuit can be connected to a direct-current power supply, provide bias voltages for a drain and a gate, and simultaneously can realize an open circuit for radio-frequency signals of two frequency bands; the bypass capacitor can filter power supply ripples and prevent the transistor from self-oscillation to protect the transistor.
Further, the L-shaped microstrip network is used to implement impedance matching of the first frequency band.
Preferably, the second microstrip line and the T-shaped microstrip line network are used for realizing impedance matching of the second frequency band, and do not affect the impedance of the second frequency band; the second microstrip line is used for realizing the matching of admittance, and the T-shaped microstrip line network is used for realizing the offset of admittance.
Furthermore, the first microstrip line adopts Rogers5880, the relative dielectric constant is 3.66, the thickness is 0.580mm, and the tangent loss angle is 0.0009; the size of the concurrent dual band power amplifier is 90mm 50 mm.
From above, the output matching network includes a T-shaped microstrip network, a section of series microstrip line and an L-shaped microstrip network. The T-shaped microstrip line network is connected in parallel, and the L-shaped microstrip line network is connected with a section of series microstrip line in series.
The integral element of the invention comprises a blocking capacitor of an input port and an output port; the microstrip line is connected between the blocking capacitor and the input port, and the microstrip line is connected between the blocking capacitor and the output port; the middle core is a transistor model CGH40010F manufactured by CRee corporation. The input port of the transistor is connected with the dual-band grid biasing circuit and simultaneously connected with a stabilizing network connected in parallel with the RC. And a bypass capacitor is connected between the concurrent dual-band bias circuit and the direct-current power supply. The left end of the RC parallel stable network is connected with a section of L-shaped microstrip line network in series, the left end of the L-shaped microstrip line network is connected with a section of microstrip line, and the microstrip line is connected with a T-shaped microstrip line network. The right end of the transistor is connected with a drain electrode dual-band bias circuit and is connected with an L-shaped microstrip line network in series. The right end of the L-shaped microstrip line network is connected with a section of microstrip line, and the microstrip line is connected with a T-shaped microstrip line network. The invention can simultaneously realize the power amplification of any two wave bands, and has compact structure and convenient solution.
The novel concurrent dual-band frequency setting power amplifier provided by the invention at least has the following beneficial effects:
1. the novel concurrent dual-band radio frequency power amplifier adopts an L-shaped microstrip line network, a T-shaped microstrip line network and a section of microstrip line to be connected in series to realize the amplification of the set frequency signal power of two bands.
2. The invention realizes the power amplification of two frequency bands of 2.4G and 2.8G, and the actual measurement result shows that the power additional efficiency reaches 57.2 percent and 56.5 percent respectively when the output power reaches 10W in the two frequency bands of 2.4G and 2.8G. The whole circuit has simple structure and small volume.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following detailed description is given in conjunction with the preferred embodiments, together with the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below.
FIG. 1 is a diagram of a concurrent dual band matching circuit;
FIG. 2 is a concurrent dual band bias circuit diagram;
FIG. 3 is a diagram of an actual concurrent dual band output matching circuit;
FIG. 4 is a diagram of an actual concurrent dual band input matching circuit;
FIG. 5 is a diagram of the overall circuit topology;
FIG. 6 is a graph of 2.4G output power versus power added efficiency;
FIG. 7 is a graph of 2.8G output power versus power added efficiency;
fig. 8 is a schematic structural diagram of a novel concurrent dual-band rf power amplifier according to the present invention.
Detailed Description
Other aspects, features and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which form a part of this specification, and which illustrate, by way of example, the principles of the invention. In the referenced drawings, the same or similar components in different drawings are denoted by the same reference numerals.
As shown in fig. 1 to 8, the novel concurrent dual-band radio frequency power amplifier of the present invention includes two segments of a first microstrip line 7 for welding a port, a dc blocking capacitor 8 loaded on the other end of the first microstrip line 7, a T-shaped microstrip line network 1 loaded on the other end of the dc blocking capacitor 8, a second microstrip line 6 loaded on the other end of the T-shaped microstrip line network 1, a transistor 9 located in the middle, and a stabilizing network 4, wherein the other end of the second microstrip line 6 is connected to an L-shaped microstrip line network 3, and the L-shaped microstrip line network 3 is used for implementing impedance matching of a first frequency band. The transistor 9 is connected with the concurrent dual-band bias circuit 2, the concurrent dual-band bias circuit 2 is connected with the bypass capacitor 5 in parallel, and the transistor 9 is connected with the stabilizing network 4.
The stabilizing network 4 is connected with the concurrent dual-band bias circuit 2 in parallel, the stabilizing network 4 is connected with the L-shaped microstrip line network 3 in series, the T-shaped microstrip line network 1 is connected with the L-shaped microstrip line network 3 in parallel, the T-shaped microstrip line network 1 is connected with the DC blocking capacitor 8 in parallel, and the bypass capacitor 5 is connected between the power supply and the second microstrip line 6 in parallel.
The transistor 9 is in a CGH40010F model, and can amplify radio frequency signals in a frequency range of 0-6G; the blocking capacitor 8 can block direct current signals and direct current alternating current signals. The concurrent dual-band bias circuit 2 can be connected with a direct-current power supply, provides bias voltages of a drain electrode and a grid electrode, and can realize open circuit of radio-frequency signals of two frequency bands; the bypass capacitor 5 can filter power supply ripples and prevent the transistor from self-oscillation to protect the transistor.
The second microstrip line 6 and the T-shaped microstrip line network 1 realize impedance matching of a second frequency band, and do not influence the impedance of the second frequency band; the second microstrip line 6 realizes the matching of admittance, and the T-shaped microstrip line network 1 realizes the offset of admittance. The first microstrip line 7 adopts Rogers5880, the relative dielectric constant is 3.66, the thickness is 0.580mm, and the tangent loss angle is 0.0009; the size of the concurrent dual band power amplifier is 90mm 50 mm.
Referring to FIG. 1, the design of the matching circuit for the first frequency point
Referring to fig. 1, firstly, two frequency points f are measured by load traction1，f2(f1＞f2) Respectively, complex impedances of ZL1＝R1+jX1，ZL2＝R2+jX2。
See fig. 1 in matching circuitCharacteristic impedance of series microstrip line is fixed as Z 050 and transform the real part of the complex admittance to G0The first section of microstrip parallel branch realizes the imaginary part of the complex impedance of the first frequency point to be converted to zero, and the load Z is realized at the first frequency point0An impedance match of 50. Characteristic impedance of series microstrip line of the second section is fixed to Z 050 and transforming the real part of the complex admittance of the second frequency point to G0. The second section of microstrip parallel branch realizes that the imaginary part of the second frequency point is transformed to zero and is equivalent to an open circuit at the other frequency point, and finally, the load Z is realized050 impedance matching a series characteristic impedance of Z0The microstrip line connects the first frequency point f1Is converted to a resistance circle with a normalized impedance of 1, i.e.
Figure RE-RE-GDA0003484734910000071
The input impedance formula of the series microstrip line is as follows:
Figure RE-RE-GDA0003484734910000072
the complex equation (1.2) is collated into a real equation set (1.3):
Figure RE-RE-GDA0003484734910000073
a characteristic impedance of one segment Z0A series microstrip line of 50 will have a first frequency f1The real part of the complex impedance transformed into complex admittance is G00.02. Fast solution of two unknown variables θ using MATLAB1And BA. From FIG. 1, BAWhen known, at node A, the parallel microstrip stub cancels the first frequency f1The required susceptance value. According to a selected characteristic impedance of Z0The parallel microstrip branch stub can determine theta2As shown in the formula (1.4),
Figure RE-RE-GDA0003484734910000081
see fig. 1 for a second frequency point of the matching circuit design
Referring to FIG. 1, at node A, the impedance value at the second frequency point has been determined by ZL2＝R2+jX2Is changed into ZL2＝R4+jX4. Similarly, the first series characteristic impedance value is Z0Of a microstrip line, theta of a microstrip line3And BH(f2) Solved by equation (1.4). Referring to fig. 1, at the node H, a T-shaped microstrip line is connected in parallel to offset the second frequency point f2Required susceptance value YH(f2) While at the first frequency point is equivalent to an open circuit, namely YH(f1) 0. Referring to fig. 1, a detailed analysis will be made on a T-shaped microstrip line, where the electrical length of the first microstrip line is 90 degrees based on the first frequency point f1In the case of (1). The remaining two sections are connected with the branch stub of the microstrip in parallel, one section is an open-circuit stub, and at the first frequency point f1Is 90 degrees, and the other section is based on the cancellation of the second frequency f2Is determined by the required admittance. Referring to fig. 1, the characteristic impedance of the first segment of microstrip line is Z0And an electrical length of 90 DEG @ f1This is a predetermined condition, and the second segment is an open stub whose characteristic impedance Z is0Is a sum electrical length of 90 DEG @ f1This is also preset. Y can be obtained based on the impedance of the open stub being 0 and the impedance of the short stub being ∞H(f1) 0. Then, at the point H, the input susceptance value Y of the second frequency point is cancelled according to the requirementH(f2) The required load impedance Z can be obtained by the formula (1.5)c(f2)。
Figure RE-RE-GDA0003484734910000082
Referring to fig. 1, the first microstrip line has characteristic impedance of Z0And length of electricityDegree of 90 DEG @ f1A series microstrip line. Thus, the impedance value at point C can be obtained by the formula (1.5)
Figure RE-RE-GDA0003484734910000091
Referring to fig. 1, next, the admittance values of the open stub are found. When characteristic impedance Z0And electrical length of 90 degrees @ f1Then, the impedance value can be obtained by the formula (1.6)
Figure RE-RE-GDA0003484734910000092
Figure RE-RE-GDA0003484734910000093
Referring to fig. 1, the admittance value of the last branch stub can be determined, and the result is obtained by the formula (1.7).
Yc2(f2)＝Yc(f2)-Yc1(f2) (1.7)
Referring to FIG. 1, the characteristic impedance of the parallel branch stub is selected to be Z0The electrical length θ of the branch stub can be obtained by the formula (1.8)4@f2。
Figure RE-RE-GDA0003484734910000094
See FIG. 2 for design of bias circuit
Referring to fig. 2, the bias circuit realizes the blocking of the radio frequency signal and the direct current path. This requires that the impedance values at the two corresponding frequency points be infinite, which is the property of the microstrip stub with a load grounded and an electrical length of 90 degrees. Of course, the impedance value is an ideal state, and the radio frequency signal can be blocked only by making the impedance value reach about one kiloohm. See the bias circuit structure of the design of fig. 2. The concurrent dual-band bias circuit is in an open state at two frequency points, and the first frequency point f is realized firstly in the reference of fig. 21Is selected to have a characteristic impedance Z0 and an electrical length of 90 degrees @ f1A microstrip line connected in series with the load of the transmission line and having a characteristic impedance of Z0And electrical length of 90 degrees @ f1The load of the switch is connected with the open-circuit microstrip branch stub. An open circuit at the first frequency point is realized. Referring to fig. 2, next, a second frequency point f is realized by connecting microstrip branch stub lines in parallel2Is opened. Now the characteristic impedance and electrical length of the first two segments of microstrip lines have been determined. Then, when the characteristic impedance of the third segment of microstrip line is set to be Z0The electrical length θ can be obtained by the equations (1.9), (1.10), (1.11) and (1.12)6@f2。
Figure RE-RE-GDA0003484734910000101
Figure RE-RE-GDA0003484734910000102
YM2(f2)＝YM(f2)-YM1(f2) (1.11)
Figure RE-RE-GDA0003484734910000103
Referring to fig. 2, in designing the output matching circuit, the value of port term1 is set to 50 ohms and the value of port term2 is set to the conjugate value of the output impedance value. Referring to fig. 2, first, impedance matching of the first frequency band is realized, and the conductance value of the port term2 is converted by 0.02 through a section of series microstrip line. The parallel microstrip stub line then cancels the corresponding susceptance to 0. On the basis of the foregoing, the impedance matching of the second frequency band is realized, and the conductance value of the second frequency band of the current node is converted into 0.02 by connecting a microstrip line with a characteristic impedance of 50 ohms in series. Referring to fig. 2, the parallel microstrip stub cancels the susceptance value of the second frequency band of the present node to 0 while not affecting the previous frequency band whose impedance value has been matched to 50 ohms. Finally, see FIG. 2, calculate the respective by MATLABAnd finally obtaining the concurrent dual-band output matching circuit and the concurrent dual-band input matching circuit according to the parameters of the microstrip line. See fig. 3, see fig. 4. The concurrent dual-band matching circuits obtained in the figure are all composed of ideal microstrip lines. Finally, the microstrip line is converted into an actual microstrip line according to an actual plate. The results of the S-parameter simulation performed with reference to the matching circuit shown in fig. 3 are shown in fig. 5. In the target frequency band, S11Are all less than 10dB, S21The trend is 0dB, good concurrent dual-band characteristics are shown, and the feasibility of the method is verified. And carrying out simulation optimization in ADS. The bias circuit and the input and output matching networks are put into the whole circuit, and the obtained overall topological structure is shown in fig. 6.
The proposed concurrent dual-band power amplifier was previously designed by ADS simulation software, confirming the feasibility of the improved concurrent dual-band. To further verify the correctness of the proposed scheme, a Rogers5880 substrate (H0.506 mm, e) was used based on the Cree CGH40010F transistor (r) (#)r2.2) physical process testing was performed on the designed concurrent dual band power amplifier. The direct current bias voltages of the drain electrode and the grid electrode are respectively as follows: VD is 28V and VG is-2.8V. The power amplifier was tested for small signals and the test results are shown in fig. 7. As can be seen from FIG. 7, S is at the 2.4G frequency point21Has a maximum small signal gain of 16dB and S at the frequency point of 2.8G21The small signal gain of (2) is 15 dB. The large signal test results are shown in fig. 8. At the frequency point of 2.4G, when the input power is 28dBm, the output power is 40.5 dBm, the power added efficiency is 57 percent, and the gain is 12 dB. At the frequency point of 2.8G, when the input power is 28dBm, the output power is 41dBm, the power added efficiency is 56 percent, and the gain is 11 dB.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions and scope of the present invention as defined in the appended claims.

Claims (6)

1. The novel concurrent dual-band radio frequency power amplifier is characterized by comprising two sections of first microstrip lines (7) for welding ports, a blocking capacitor (8) loaded at the other end of the first microstrip lines (7), a T-shaped microstrip line network (1) loaded at the other end of the blocking capacitor (8), a second microstrip line (6) loaded at the other end of the T-shaped microstrip line network (1), a transistor (9) located in the middle and a stabilizing network (4), wherein the other end of the second microstrip line (6) is connected with an L-shaped microstrip line network (3), the transistor (9) is connected with a concurrent dual-band biasing circuit (2), the concurrent dual-band biasing circuit (2) is connected with a bypass capacitor (5) in parallel, and the transistor (9) is connected with the stabilizing network (4);
the stabilizing network (4) is connected with the concurrent dual-band biasing circuit (2) in parallel, the stabilizing network (4) is connected with the L-shaped microstrip line network (3) in series, the T-shaped microstrip line network (1) is connected with the L-shaped microstrip line network (3) in parallel, the T-shaped microstrip line network (1) is connected with the DC blocking capacitor (8) in parallel, and the bypass capacitor (5) is connected between the power supply and the second microstrip line (6) in parallel.
2. The novel concurrent dual band radio frequency power amplifier of claim 1, characterized in that the transistor (9) is of the type CGH40010F, enabling radio frequency signal amplification in the frequency range 0-6G; the blocking capacitor (8) can block direct current signals and direct current alternating current signals.
3. The novel concurrent dual-band rf power amplifier of claim 1, wherein the concurrent dual-band bias circuit (2) is capable of connecting a dc power supply, providing drain and gate bias voltages, while also enabling open circuits for rf signals in both bands; the bypass capacitor (5) can filter power supply ripples and prevent the transistor from self-oscillation to protect the transistor.
4. Novel concurrent dual band radio frequency power amplifier according to claim 1, characterized in that the L-shaped microstrip network (3) is used to implement impedance matching of the first band.
5. The novel concurrent dual band radio frequency power amplifier according to claim 1, wherein the second microstrip line (6) and the T-shaped microstrip line network (1) are configured to implement impedance matching for the second frequency band without affecting the impedance of the second frequency band; the second microstrip line (6) is used for realizing admittance matching, and the T-shaped microstrip line network (1) is used for realizing admittance offset.
6. The novel concurrent dual-band radio frequency power amplifier according to claim 1, wherein the first microstrip line (7) employs Rogers5880, has a relative dielectric constant of 3.66, a thickness of 0.580mm, and a tangent loss angle of 0.0009; the size of the concurrent dual band power amplifier is 90mm 50 mm.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115694380A (en) * 2022-10-30 2023-02-03 北京航空航天大学 Double-frequency broadband power amplifier and matching branch design method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115694380A (en) * 2022-10-30 2023-02-03 北京航空航天大学 Double-frequency broadband power amplifier and matching branch design method thereof

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