CN115868032A - Solar module - Google Patents

Solar module Download PDF

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Publication number
CN115868032A
CN115868032A CN202280004985.8A CN202280004985A CN115868032A CN 115868032 A CN115868032 A CN 115868032A CN 202280004985 A CN202280004985 A CN 202280004985A CN 115868032 A CN115868032 A CN 115868032A
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CN
China
Prior art keywords
structured
line
layer
solar module
window
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Pending
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CN202280004985.8A
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Chinese (zh)
Inventor
克里斯蒂安·舒伯特
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Kaisheng Technology Group Co ltd
China Building Materials Glass New Materials Research Institute Group Co Ltd
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Kaisheng Technology Group Co ltd
China Building Materials Glass New Materials Research Institute Group Co Ltd
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Publication of CN115868032A publication Critical patent/CN115868032A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Embodiments of the present application relate to a solar module, comprising: a substrate and a plurality of solar cells formed on the substrate in series, wherein each of the plurality of solar cells comprises a back electrode layer, an absorber layer, a window and buffer layer, a laminate layer, a front glass panel, and structured lines P1, P2, and P3; the structured line P1 extends through the back electrode layer and is filled with the material of the absorber layer; the structured line P2 extends through the absorbing layer and is filled with the material of the window and the buffer layer; and a structured line P3 extends through the window and the buffer layer and the absorber layer; the method is characterized in that: the solar module further comprises opaque and reflective line structures disposed in the dead space formed by the structured lines P1, P2 and P3 and on the side of the window and buffer layer close to the front glass pane; the line-like structure extends through the structured line P2 from an edge of the structured line P1 remote from the structured line P2 to an edge of the structured line P3 close to the structured line P2 in a lateral direction, which is perpendicular to the direction in which the individual layers are stacked in the solar module.

Description

Solar module
Technical Field
The present disclosure relates to the field of solar energy technology, and in particular to solar modules.
Background
Generally, a thin film solar module is a monolithic circuit formed by connecting a plurality of individual solar cells in series. A plurality of individual solar cells are interconnected by a structured region formed by structured wires P1, P2 and P3 (as shown in fig. 1). Thin film solar modules typically include a back electrode layer, an absorber layer, a window and buffer layer, a laminate layer, and a front glass panel. The back electrode layer, the absorber layer and the window and buffer layer are separated by structured lines P1, P2 and P3, respectively. In the structured area formed by the structured wires P1, P2 and P3, no electrical energy will be generated. Thus, the structured area is often referred to as "dead zone", see fig. 1.
The reduction of dead zones by improving the structuring process is very important for improving the short-circuit current density and thus for gradually increasing the efficiency of the solar module. However, the reduction of the dead space is technically limited and cannot be designed without losses.
Furthermore, the structuring process will lead to structural and electrical defects in the solar module, which leads to additional losses. These losses increase with decreasing structured distance and structured line width (the sum of these line widths equals the width of the dead zone), which further limits the improvement of the solar module efficiency.
To date, attempts have been made to reduce electrical and structural defects by controlling the structuring process, which, however, is difficult to achieve due to the large number of interactions of the various layers in the structuring process and is limited by process technology. The illumination of the solar module leads to an increase of losses in the dead zone due to the shunt path in the structured line P1. The dielectric within the structured line P1 will help to enhance the P1 shunt path compared to the above-described techniques, but will not contribute to the photon yield and light management of the solar module.
Therefore, there is a need for a solar module that can increase photon yield while improving the split in the dead zone.
Disclosure of Invention
It is an object of the present application to provide a solar module which is capable of reflecting photons entering a dead zone onto a semiconductor stack, improving the shunting in the dead zone, and thereby increasing the efficiency of the solar module.
Embodiments of the present application provide a solar module, comprising: a substrate and a plurality of solar cells formed on the substrate in series, wherein each of the plurality of solar cells comprises a back electrode layer, an absorber layer, a window and buffer layer, a laminate layer, a front glass plate, and structured lines P1, P2, and P3; the structured line P1 extends through the back electrode layer and is filled with the material of the absorber layer; the structured line P2 extends through the absorbing layer and is filled with the material of the window and the buffer layer; a structured line P3 extends through the window and the buffer layer and the absorber layer; wherein the solar module further comprises opaque and reflective line structures arranged in the dead space formed by the structured lines P1, P2 and P3 and located at the side of the window and buffer layer close to the front glass pane; the line-like structure extends in a lateral direction from an edge of the structured line P1 remote from the structured line P2 to an edge of the structured line P3 close to the structured line P2, the lateral direction being perpendicular to the direction in which the individual layers are stacked in the solar module.
The solar modules provided in the present application, in particular thin film solar modules (CdTe, CIGS, etc.), can be stably used for monolithic interconnect substrates and superstrate structures. In particular, the present application relates to CIGS thin film solar modules. The solar module of the present application can increase the number of photons absorbed in the absorption layer by reflecting photons entering the dead zone to the absorption layer. Furthermore, the solar module of the present application can be made dark by making the dead zone, particularly the structureThe area in the wiring P1 is darkened to increase the shunt resistance, thereby increasing the short circuit current density. A voltage difference is present across the trenches of the structured line P1. The voltage difference causes a current to flow through the material of the absorption layer located in the trench, which may be influenced by various factors, such as the width of the trench of the structured line P1, the conductivity of the material of the absorption layer in the trench and the dependence of the material of the absorption layer on light. By darkening the dead zones (in particular the trenches), the solar module of the present application reduces the conductivity of the material of the absorber layer in the trenches of the structured line P1, thereby increasing the shunt resistance, i.e. reducing the shunt path. Per square centimeter (cm) 2 ) The shunt resistance of (2) can be increased by hundreds of ohms, and the efficiency of the solar module can be relatively improved by 0.5 to 2 percent. Therefore, the short circuit current density is relatively increased by about 0.5% to 2%.
The linear structure of the present application can increase the number of photons absorbed by the absorption layer of the solar module by reflecting photons entering the dead zone to the absorption layer. Furthermore, the linear structure can reduce the shunt paths in the structured area, thereby improving the efficiency of the solar module. The line structures of the present application are only required to be opaque and reflective, and not to be conductive, as compared to conventional meshes which are required to have good conductivity. Furthermore, a grid parallel to the structured lines that is conductive but hardly reflective does not contribute much to the improvement of efficiency.
Drawings
In order to more clearly describe embodiments of the present disclosure or technical solutions of the related art, drawings that need to be used in the embodiments and the related art will be briefly described below. It is to be understood that the drawings presented below are for purposes of illustrating only some embodiments of the present disclosure. The same reference numbers in the drawings identify the same or similar elements.
Fig. 1 shows a cross-sectional view of a solar module according to an embodiment of the present application.
Detailed Description
In order that the objects, aspects and advantages of the present application will become more apparent and more readily appreciated, reference is now made to the following detailed description taken in conjunction with the accompanying drawings and examples. It should be apparent that the described embodiments are only some, and not all embodiments of the application. All other embodiments obtained by a person skilled in the art on the basis of the embodiments of the disclosure fall within the scope of protection defined by the disclosure.
In general, solar modules manufactured by thin film PV technology may be referred to as thin film solar modules. Thin-film solar modules may include, for example, copper Indium Gallium Selenide (CIGS) Thin-film solar modules, cadmium telluride (CdTe) Thin-film solar modules, organic Photovoltaic (OPV) Thin-film solar modules, perovskite Thin-film solar modules, dye Sensitized Solar Cell (DSSC) modules, heterojunction with Intrinsic Thin film (HJT) solar cell modules, and the like. The specific structure and production method of the various thin-film solar modules are known in the solar field and will therefore not be described in detail.
Fig. 1 is a cross section of a thin film solar module 1 according to an embodiment of the present application. The thin-film solar module 1 comprises a front glass plate 11, a laminate layer 12, a window and buffer layer 13, an absorber layer 14, a back electrode layer 15 and opaque and reflective line structures 16.
The window and buffer layer 13, the absorber layer 14 and the back electrode layer 15 forming the stack of semiconductor layers are separated by structured lines P1, P2 and P3. The structured wires P1 extend through the back electrode layer 15 and are filled with the material of the absorption layer 14. The structured line P2 extends through the absorption layer 14 and is filled with the material of the window and buffer layer 13. The structured line P3 extends through the window and the buffer layer 13 and the absorption layer 14.
The front glass plate 11 is located on the front side of the solar module 1, i.e. the side from which the solar rays enter the solar module 1. The front glass plate 11 may be made of soda lime glass, silicate glass, special silicate glass (low-iron glass), borosilicate glass, aluminosilicate glass, or chemically strengthened glass (potassium glass). The front glass plate 11 may be transparent or translucent, and may be colored or colorless. The front glass plate 11 may be formed by a float glass process or a roll glass process. The surface of the front glass plate 11 may be flat or textured (acid etched, sandblasted or rolled).
A substrate (not shown) is located on the back side of the solar module 1 opposite to the front side of the solar module 1. The substrate may be made of a material such as glass, polymer, or metal.
The laminate layer 12 is a polymer laminate in the solar module 1, which is used for glass bonding in practical applications. The laminate layer 12 may be made of EVA, POE, EVA-POE-EVA, PDMS/silicon, PVB or TPU, etc. The laminate layer may be formed by foil or non-foil (hot melt) lamination.
The window and the buffer layer 13 are arranged on the absorption layer 14. The window and buffer layer 13 includes a buffer layer and a conductive window layer. The buffer layer is an n-type semiconductor layer, which may be a silicon-based thin film such as amorphous silicon, germanium, single crystalline silicon, and polycrystalline silicon, or a compound thin film such as copper indium gallium selenide, cadmium telluride, and gallium arsenide. The conductive window layer is located above the buffer layer. The conductive window layer is a transparent conductive oxide layer, which may be Indium Tin Oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), or the like.
The absorption layer 14 is disposed on the back electrode layer 15. The absorber layer 14 is a p-type semiconductor layer which may be a silicon-based thin film such as amorphous silicon, germanium, single crystalline silicon, and polycrystalline silicon, or a compound thin film such as copper indium gallium selenide, cadmium telluride, and gallium arsenide. A p-n junction is formed between the absorber layer 14 and the buffer layer.
The back electrode layer 15 is disposed on a substrate (not shown). The back electrode layer 15 may be a metal electrode or a transparent conductive thin film electrode. For example, the metal electrode may be a highly conductive metal such as copper, silver, iron, aluminum, tungsten, molybdenum, chromium, nickel, tantalum, vanadium, titanium, manganese, and the like. The transparent conductive thin film electrode may be AZO, ITO, or the like.
The opaque and reflective line structures 16 have a dim light and dark management mode (LDMP). Opaque and reflective line structures 16 are disposed in the dead space formed by structured lines P1, P2 and P3 and on the side of window and buffer layer 13 near front glass pane 11. The line-like structure 16 extends through the structured line P2 from the edge of the structured line P1 remote from the structured line P2 to the edge of the structured line P3 close to the structured line P2 in a lateral direction, which is perpendicular to the direction in which the individual layers are stacked in the solar module or in other words parallel to the surface of the individual layers.
In the embodiment of the present application, in the dead zone, the linear structure 16 is disposed on the side of the window and buffer layer 13 close to the front glass plate 11 and above the window and buffer layer 13. The line-like structures 16 are substantially opaque and highly reflective.
The line structure 16 reflects incident photons. As shown in fig. 1, photons passing through the front glass plate 11 from the light incident side of the solar module are reflected by the linear structures 16 back to the interface between the laminate layer 12 and the front glass plate 11, in particular to the interface between the front glass plate 11 and the air. Photons reflected back to the interface can be reflected back into and absorbed by the absorbing layer to generate additional electrical energy. That is, photons lost in the dead zone without the line-like structure 16 in the prior art are re-absorbed by backscattering/back reflecting these lost photons.
In the present application, diffuse reflection of photons is advantageous. If the front glass plate has a structured surface, the number of back-reflected photons that can be absorbed again by the absorbing layer will increase. Furthermore, due to the opacity of the linear structure 16, the linear structure 16 will cause darkening of the structured area, in particular the area constituted by the structured lines P1, P2 and the side of the structured line P3 close to the structured line P2. Thus, in this region of the dead zone, the light induced splitting path and loss mechanism are improved, thereby reducing light splitting and improving low light. This additional line structure is particularly effective for solar cell modules with structured regions with high cell count, high dead space and percentage of structured lines, and severe structural damage, and is technically achieved by applying a highly reflective material or combination of materials over the dead space.
In the present application, the geometric pattern of the line-like structures is designed to achieve an efficient backscattering/back reflection of photons and is arranged on the region extending from the side of the structured line P1 to the side of the structured line P3 close to the structured line P2 to reliably prevent the photovoltaic active area from being covered. As shown in fig. 1, line-like structure 16 extends in a lateral direction from the (outer) edge of structured line P1 remote from structured line P2 through structured line P2 to the (inner) edge of structured line P3 close to structured line P2. In the lateral direction, the width of the line-like structure 16 is equal to the distance from the edge of the structured line P1 remote from the structured line P2 to the edge of the structured line P3 close to the structured line P2. Furthermore, line structures 16 may have a slightly smaller width, which is the distance from a location in structured line P1 near the outer edge of structured line P1 to a location in the absorbent layer near the inner edge of structured line P3. In one embodiment of the present application, the width of the line structures 16 may be 50 μm to about 300 μm for mass production of full-scale solar modules.
In the present application, the surface of the line-like structure used for efficient backscattering/back reflection of photons may be a rough surface with a high proportion of diffuse backscattering/back reflection. The thread-like structures may have a specific structured surface of a three-dimensional structure which may be constructed of a plurality of pyramids, polyhedrons, grooves or trenches, or a combination thereof.
The line-like structure is made of a highly reflective material. The reflectivity of the high-reflection material is more than 90%. The highly reflective material may include metallic and non-metallic materials. For example, the metal material may be at least one selected from silver, aluminum, copper, an alloy, and the like. The non-metallic material may be selected from TiO 2 、Al 2 O 3 、ZrO 2 、Si 3 N 4 And the like. In addition, metallic or non-metallic materials may also be incorporated into the glass or polymer paste as reflective particles or pigments.
The linear structure has a high reflectivity (greater than 85%) over a wide wavelength range of the spectral sensitivity of the solar cell. The adjacent medium of the thread-like structure is the encapsulation film in the case of a bottom-lining structure or the front glass plate in the case of a top-lining structure. The refractive index of the materials used for the encapsulation film and the front glass plate were both 1.5.
In the present application, the thickness of the linear structure is not critical as long as the optical characteristics are satisfied. Although a larger thickness will affect the lamination process, the thickness of the thread-like structure has less impact on the performance of the thread-like structure compared to the width of the thread-like structure (50 to 300 μm).
Solar modules with a non-metallic reflective layer (line structure) differ from those produced by electrically conductive, core-acting grid technology. The current density of the solar module having the linear structure is relatively increased by 0.5% to 2% compared to the solar module without the linear structure.
In the present application, the thread-like structures may be manufactured by a common printing process such as ink jet, aerosol jet, screen printing or the like.
The above description is only intended as a preferred embodiment of the present application and is not intended to limit the scope of the present application. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application are all included in the protection scope of the present application.

Claims (6)

1. A solar module, comprising: a substrate and a plurality of solar cells formed on the substrate in series, wherein each of the plurality of solar cells comprises a back electrode layer, an absorber layer, a window and buffer layer, a laminate layer, a front glass plate, and structured lines P1, P2, and P3; the structured line P1 extends through the back electrode layer and is filled with the material of the absorber layer; the structured line P2 extends through the absorbing layer and is filled with the material of the window and the buffer layer; a structured line P3 extends through the window and the buffer layer and the absorber layer;
the method is characterized in that:
the solar module further comprises opaque and reflective line structures disposed in the dead zone formed by the structured lines P1, P2 and P3 and on a side of the window and buffer layer adjacent to the front glass panel; the line-like structure extends through the structured line P2 from an edge of the structured line P1 remote from the structured line P2 to an edge of the structured line P3 close to the structured line P2 in a lateral direction, which is perpendicular to the direction in which the individual layers are stacked in the solar module.
2. The solar module of claim 1, wherein the linear structures are made of a highly reflective material having a reflectivity of greater than 90%.
3. The solar module of claim 2, wherein the highly reflective material comprises a metallic or non-metallic material.
4. The solar module of claim 3, wherein the metallic material is at least one selected from silver, aluminum, copper, and alloys thereof, and the non-metallic material is selected from TiO 2 、Al 2 O 3 、ZrO 2 And Si 3 N 4 At least one of (a).
5. The solar module of claim 1, wherein the linear structures have a width of 50 μ ι η to 300 μ ι η.
6. The solar module of claim 1, wherein the line-like structures have a structured surface of a three-dimensional structure constructed of a plurality of pyramids, polyhedrons, grooves or channels, or a combination thereof.
CN202280004985.8A 2022-08-18 2022-08-18 Solar module Pending CN115868032A (en)

Applications Claiming Priority (1)

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PCT/CN2022/113285 WO2024036556A1 (en) 2022-08-18 2022-08-18 Solar module

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CN115868032A true CN115868032A (en) 2023-03-28

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KR101199100B1 (en) * 2004-12-30 2012-11-08 인텔렉츄얼 벤처스 투 엘엘씨 Cmos image sensor having asymmetric well structure of source follower
CN105206703B (en) * 2014-05-26 2018-04-27 北京恒基伟业投资发展有限公司 The production method and its electric deposition device of a kind of thin-film solar cells
CN106409927A (en) * 2015-07-27 2017-02-15 Tgo科技株式会社 Solar cell and manufacturing method thereof
CN106409960A (en) * 2015-07-27 2017-02-15 Tgo科技株式会社 Solar cell and manufacturing method thereof

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