CN115843205A - Preparation method of perovskite film layer and perovskite solar cell - Google Patents
Preparation method of perovskite film layer and perovskite solar cell Download PDFInfo
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Abstract
The application belongs to the technical field of perovskite solar cells and provides a preparation method of a perovskite film layer and a perovskite solar cell, wherein the preparation method of the perovskite film layer comprises the following steps: applying a perovskite precursor solution on the surface of the transmission layer film to form a first coating; providing an organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and annealing to obtain a perovskite film layer modified by guanidine salt; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate. The method realizes gradient controllable guanidine salt modification, and the modified functional groups on the surface of the perovskite are the most; compared with the method for preparing the passivation layer independently, the method can avoid the generation of an additional interface; the gradient doped perovskite layer is beneficial to adjusting the work function distribution of the perovskite layer and is beneficial to charge transmission.
Description
Technical Field
The application belongs to the technical field of perovskite solar cells, and particularly relates to a preparation method of a perovskite film layer and a perovskite solar cell.
Background
At present, perovskite solar cells have the characteristics of high conversion efficiency, easiness in preparation, low cost and the like, so that the perovskite solar cells have the potential of becoming a new generation of photovoltaics. The perovskite solar cell can be mainly divided into the following from the top down: metal electrodes, transport layer materials (transporting electrons or holes), perovskite light absorbing layers, transport layer materials (transporting holes or electrons), bottom transparent electrodes. When the hole transport layer material is on the upper layer, the solar cell is called a formal perovskite solar cell, and on the contrary, the electron transport layer material is in a trans-form when the electron transport layer material is on the upper layer. In the batteries with the two structures, the preparation of the perovskite light absorption layer comprises the formation of a perovskite thin film by a wet method and a dry method. The perovskite crystal is ABX 3 The A site is usually organic cation, B is metal cation, mainly lead and cesium, and the X site is I,And a halogen anion such as Br.
However, the open circuit voltage of perovskite solar cells is limited by non-radiative recombination of carriers at the perovskite/charge transport layer interface, and therefore, finding a solution to overcome carrier recombination is an effective way to improve the performance of perovskite solar cells.
Optimizing the interface by an interface passivation strategy or using an additive is an effective way to solve the recombination of interface carriers, but both strategies often have certain technical disadvantages. For example, interfacial passivation often requires a separate passivation step before or after the perovskite layer is fabricated, and although a passivation layer is formed between the perovskite layer and the charge transport layer, the passivation layer is thin and has high requirements for uniformity, so that passivation film formation techniques are a technical difficulty, and the passivation layer introduces new interfaces to the device to some extent. Additive engineering is generally directed to perovskite layers, which while optimizing the interface, will also cause performance changes for non-interfacial perovskites, thereby adversely affecting battery performance.
Disclosure of Invention
Aiming at the defects in the prior art, the perovskite film layer preparation method and the perovskite solar cell are provided.
The invention provides a preparation method of a perovskite film layer, which comprises the following steps:
applying a perovskite precursor solution on the surface of the transmission layer film to form a first coating;
providing an organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and annealing to obtain a perovskite film layer modified by guanidine salt; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate.
Preferably, the concentration of the guanidine salt in the organic salt solution containing the guanidine salt is less than 20mg/L, wherein the solvent is isopropanol or chlorobenzene.
Preferably, the organic salt solution containing a guanidinium salt further comprises a perovskite organic active ingredient.
Preferably, the perovskite precursor solution is a lead-containing precursor solution and/or a cesium-containing precursor solution.
Preferably, the transport layer film is an electron transport layer film or a hole transport layer film.
Preferably, the thickness of the perovskite film modified by the guanidine salt is 400 to 500nm.
Preferably, the temperature of the annealing treatment is 100 to 200 ℃.
The invention provides a perovskite solar cell, wherein a perovskite absorption layer is a perovskite film layer obtained by the preparation method.
The guanidine salt is an organic compound with good solubility and rich NH 2 The group is a good modification method for improving the interface performance between the perovskite layer and the charge transport layer. It can form a strong interaction with the substrate and form a passivation layer at the perovskite interface.
Compared with the prior art, the preparation of the perovskite film layer provided by the application is a novel method suitable for guanidine salt passivation, is suitable for preparing a perovskite layer by a two-step method, and comprises the following steps: firstly, forming a coating of the first step by adopting a perovskite precursor solution; and the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate, and is dissolved in an anti-solvent or a second-step solution to prepare the perovskite layer. The doping of the existing additive is the uniform doping of a perovskite layer, but the invention realizes the gradient controllable guanidine salt modification, and the modification functional groups on the surface of perovskite are the most; compared with the method for preparing the passivation layer independently, the method can avoid the generation of an additional interface; the gradient doped perovskite layer is beneficial to adjusting the work function distribution of the perovskite layer and is beneficial to charge transmission.
Drawings
FIG. 1 is a schematic flow chart illustrating the preparation of some embodiments of the present invention;
FIG. 2 is an SEM of the perovskite film layer of example 1;
fig. 3 is an SEM of the perovskite film layer of comparative example 1.
Detailed Description
The technical solutions in the embodiments of the present application are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The application provides a preparation method of a perovskite film layer, which comprises the following steps:
applying a perovskite precursor solution on the surface of the transmission layer film to form a first coating;
providing an organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and annealing to obtain a perovskite film layer modified by the guanidine salt; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate.
The perovskite layer with controllable interface passivation gradient prepared by the method is beneficial to charge transmission and improvement of battery performance.
Referring to fig. 1, fig. 1 is a schematic diagram of a two-step process according to some embodiments of the present invention. In the embodiment of the invention, the lead-containing precursor solution can be spin-coated on the first charge transport layer film and heated by the hot stage to form PbI 2 Film (first coating); and then, spin-coating the second-step solution containing guanidine salt on the first coating, and finishing two-step film forming steps through annealing to obtain the perovskite film.
At present, the transparent electrode materials commonly used for solar cells are Indium Tin Oxide (ITO) and fluorine-doped SnO 2 (FTO). In the embodiment of the invention, indium tin oxide glass is mainly used as a transparent electrode substrate to prepare the perovskite solar cell. The ITO conductive glass is mainly formed by plating a layer of transparent Indium Tin Oxide (ITO) film on glass by a magnetron sputtering method, and soda-lime glass is mainly used as a substrate. The thickness of the ITO film layer is different, and the conductivity and the light transmittance of the ITO glass are also different. The embodiment of the invention adopts the conventional transparent electrode material, such as 1-2mm of glass thickness and 100-200nm of film thickness. In the embodiment of the invention, the commercially available ITO conductive glass is preferably usedThe glass is respectively cleaned by ethanol, isopropanol (IPA) and acetone, and dried by a nitrogen gun.
In some embodiments of the present invention, the electron transport layer film is first laminated on the surface of the transparent substrate. Preparing an electron transport precursor solution: dissolving the electron transport layer material in water or alcohol solvent, and fully stirring to obtain the electron transport precursor solution. The electron transport precursor solution can be a precursor solution of a metal oxide electron transport material, including tin dioxide (SnO) 2 ) ZnO (zinc oxide), titanium dioxide (TiO) 2 ) Nano dispersion solution of the material of the electron transport layer, or sol solution for preparing the electron transport layer, etc.
Taking a tin dioxide film charge transport layer as an example, the method specifically comprises the following steps: mixing tin dioxide (SnO) 2 ) Diluting the stock solution with water (ultrapure water for laboratory), and fully stirring to obtain SnO 2 And (3) precursor solution. The SnO 2 In the precursor solution, the volume ratio of tin dioxide to water can be 1 2 The precursor solution is uniformly spread on the surface of the ITO conductive glass, and the parameters of the spin coater are preferably set as follows: rotation rate 4000rpm/s and time 30s; then placing the alloy on a hot bench at 100 to 150 ℃ for annealing to obtain SnO 2 The thickness of the film can be 30-50nm. SnO formed as described above 2 And (3) treating the film in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
In other embodiments of the present invention, a hole transport layer film is first combined on a transparent substrate. Illustratively, niO disposed on the surface of the substrate x A thin film (thickness 20 nm) obtained by conventional magnetron sputtering; the NiO is formed x The film is treated with oxygen plasma. The hole transport layer material can be spirol-OMeTAD, cuO x And the thickness ranges from 10nm to 100nm.
And then, the perovskite precursor solution is spin-coated on the surface of the transmission layer film to form a first coating. The perovskite precursor solution is generally lead (Pb) -containing precursor solution and/or cesium (Cs) -containing precursor solution.
The perovskite precursor solution is prepared first and a coating is formed,the method specifically comprises the following steps: pbI 2 Dissolving in solvent such as DMF (N, N-dimethylformamide) and DMSO (dimethyl sulfoxide), heating and stirring to dissolve completely to obtain PbI 2 A precursor solution (which may be referred to as a first solution). Uniformly spreading the first solution on the surface of the annealed transmission layer film, and preferably setting the parameters of a spin coater as follows: the speed is 2200 to 2400rpm/s and the time is 30 to 50s; then heating the mixture in a hot bench at 70 to 80 ℃, and removing the solvent to obtain PbI 2 The film is the first coating.
In the embodiment of the invention, an organic salt solution containing guanidine salt is prepared, wherein the guanidine salt comprises guanidine iodide and guanidine methyl (C) 2 H 7 N 3 ) Guanidine hydrochloride, (CH) 5 N 3 HCl), N-Boc-guanidine (C) 6 H 13 N 3 O 2 ) Guanidine acetate (C) 3 H 7 N 3 O 2 ) Diphenylguanidine (C) 13 H 13 N 3 ) And guanidine sulfate (C) 2 H 10 N 6 ·H 2 SO 4 ) Further, one or more of methylguanidine, guanidine hydrochloride and N-Boc-guanidine may be used as a commercially available product. Preferably, the concentration of the guanidine salt in the organic salt solution containing the guanidine salt is less than 20mg/L, which is beneficial to crystallization. Wherein the guanidinium salt may be added to an anti-solvent such as chlorobenzene or a second-step solution containing a perovskite active ingredient.
Illustratively, FAI (formamidine iodide), MAI (methyl ammonium iodide) and the like are dissolved in a solvent such as isopropyl alcohol (IPA), stirred to be sufficiently dissolved, and a guanidine salt is added to the above solution to obtain an organic salt solution containing a guanidine salt, which is a second solution. And uniformly spreading the second solution on the surface of the formed first coating, wherein the parameters of the spin coater can be set as follows: the speed is 3000rpm/min, and the time is 30-40s; and then placing the film in a hot bench at 100 to 200 ℃ for annealing for 10 to 20min to obtain the perovskite film modified by the guanidine salt, wherein the thickness of the perovskite film is 400 to 500nm.
Accordingly, the invention provides a perovskite solar cell, wherein the perovskite absorption layer is the perovskite film layer obtained by the preparation method.
Some embodiments of the invention the step of preparing the perovskite solar cell comprises:
1. cleaning transparent electrode glass;
2. preparing a first charge transport layer;
3. a first step of perovskite layer;
4. in the process of preparing the perovskite film layer by the two-step method, guanidine salt is added into the solution of the second step to carry out perovskite film formation;
5. preparing a second charge transport layer;
6. and preparing a metal counter electrode.
In the embodiment of the invention, the charge transport layer and the metal counter electrode are prepared conventionally; such as gold electrodes (Au) prepared by thermal evaporation.
The performance of the prepared perovskite solar cell is detected, and the result shows that the performance of the cell prepared by the method is improved based on the perovskite layer formed by the two-step method, and the method is beneficial to application.
In order to better understand the technical content of the present invention, specific examples are provided below to further illustrate the preparation method of the perovskite film layer and the perovskite solar cell thereof. Wherein, the embodiment of the invention adopts the commercial raw materials.
Example 1
1.5cm by 1.5cm Indium Tin Oxide (ITO) glass was washed with ethanol, isopropanol (IPA) and acetone for 30 minutes, respectively, and dried with a nitrogen gun. The thickness of the glass is 2mm, and the thickness of the ITO film layer is 100nm.
Mixing tin dioxide (SnO) 2 ) Diluting the stock solution and ultrapure water according to the volume ratio of 1 2 Precursor solution; taking 50 mu L SnO 2 The precursor solution is uniformly spread on the surface of the ITO conductive glass, and the parameters of the spin coater are as follows: rotation rate 4000rpm/s and time 30s; then placing the mixture on a hot bench at 150 ℃ for annealing for 30min to obtain SnO 2 Thin film (30 nm). SnO prepared by the above method 2 And (3) treating the film in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
Weigh 0.6g PbI 2 Dissolving in 900 μ L DMF and 100 μ L DMSO mixed solution, heating at 70 deg.C and stirring to dissolve completely to obtain PbI 2 Precursor ofBulk solution (first solution). 50mg of FAI and 10mg of MAI were weighed and dissolved in 1mL of IPA solution, and stirred to be sufficiently dissolved, and 0.5mg of N-Boc-guanidine was weighed and added to the above solution to obtain an organic salt solution (second solution) containing a guanidine salt.
60 mu L of first solution is uniformly paved on the annealed SnO 2 On the surface of the film, the parameters of the spin coater are as follows: the speed is 2300rpm/s and the time is 30s; then placed in a 75 ℃ hot stage for 1min to form a first coating. Uniformly spreading 80 mu L of second solution on the surface of the formed first coating, wherein the parameters of a spin coater are as follows: the speed is 3000rpm/min, and the time is 30s; and then placing the perovskite thin film in a hot stage at 150 ℃ for annealing for 15min to obtain the perovskite thin film (450 nm) modified by the guanidinium.
260mg of lithium bistrifluoromethanesulfonylimide (Li-TFSI) was weighed and dissolved in 1mL of acetonitrile (CAN), and the solution was sufficiently stirred to obtain a Li-TFSI solution. Then 80mg of 2, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene (Spiro-MeOTAD) was weighed and dissolved in 1mL of chlorobenzene, and sufficiently stirred for dissolution; then, 30. Mu.L of 4-tert-butylpyridine (TBP) solution and 35. Mu.L of Li-TFSI solution were added thereto, and the mixture was sufficiently stirred to obtain a hole transport layer solution.
Uniformly spreading 50 mu L of hole transport layer solution on the surface of the perovskite thin film, and setting the parameters of a spin coater as follows: the speed was 3000rpm/min for 30s, giving a hole transport layer (50 nm).
Transferring the whole containing the hole transport layer into a thermal evaporation device, wherein the vacuum degree reaches 1 × 10 -5 Starting to evaporate an electrode (Au) under the condition of Pa, wherein the thickness of the Au is 100nm; and then placing the mixture in an oxygen glove box for overnight, and oxidizing to obtain the battery.
Comparative example 1
The second step without addition of guanidine salt was comparative example 1.
The morphology testing method comprises the following steps: and (3) carrying out microscopic morphology test on the perovskite thin film by using a Hitachi S-4800 high-resolution field emission Scanning Electron Microscope (SEM). Fig. 2 is a Scanning Electron Microscope (SEM) photograph of the perovskite film layer of example 1, and fig. 3 is a SEM photograph of comparative example 1. It can be seen that the perovskite grain size of the inventive examples is significantly larger than that of the comparative examples.
Testing photoelectric conversion performance: the PCE employed tests the current density-voltage (JV) curve of the cell. The test is completed in the system of the kethley 2400. And (3) testing conditions: the simulated light intensity is 100 mW cm -2 (AM 1.5G) scanning Rate of 0.1 V.s -1 (step size is 0.02V, time delay is 200 ms), the scanning interval is 1.2V to-0.2V, and the power output of the xenon lamp is calibrated by KG5 standard Si battery of NERL (National Renewable Energy Laboratory) standard 2. The results are as follows.
Example 2
1.5cm by 1.5cm Indium Tin Oxide (ITO) glass was washed with ethanol, isopropanol (IPA) and acetone for 30 minutes, respectively, and dried with a nitrogen gun. The thickness of the glass is 2mm, and the thickness of the ITO film layer is 100nm.
Mixing tin dioxide (SnO) 2 ) Diluting the stock solution and ultrapure water according to the volume ratio of 1 2 Precursor solution; taking 50 mu L SnO 2 The precursor solution is uniformly spread on the surface of the ITO conductive glass, and the parameters of the spin coater are as follows: the rotation rate is 4000rpm/s, and the time is 30s; then placing the mixture on a hot bench at 150 ℃ for annealing for 30min to obtain SnO 2 Thin film (30 nm). SnO prepared by the above 2 And (3) treating the film in an ultraviolet ozone cleaner for 30min for subsequent spin coating.
Weigh 0.6g PbI 2 Dissolving in 900 μ L DMF and 100 μ L DMSO mixed solution, heating at 70 deg.C and stirring to dissolve completely to obtain PbI 2 Precursor solution (first solution). 50mg of FAI and 10mg of MAI were weighed and dissolved in 1mL of IPA solution, and stirred to be sufficiently dissolved, and 0.4mg of N-Boc-guanidine and 0.4mg of methylguanidine were weighed and added to the above solution to obtain an organic salt solution (second solution) containing a guanidine salt.
60 mu L of first solution is uniformly paved on the annealed SnO 2 On the surface of the film, the parameters of the spin coater are as follows: the speed is 2300rpm/s and the time is 30s; then placed in a 75 ℃ hot stage for 1min to form a first coating. Spreading 80 μ L of the second solution uniformlyOn the surface of the formed first coating, the parameters of the spin coater are set as follows: the speed is 3000rpm/min, and the time is 30s; and then placing the perovskite thin film in a hot stage at 150 ℃ for annealing for 15min to obtain the perovskite thin film (450 nm) modified by the guanidinium.
260mg of lithium bistrifluoromethanesulfonylimide (Li-TFSI) was weighed and dissolved in 1mL of acetonitrile (CAN), and the solution was sufficiently stirred to obtain a Li-TFSI solution. Then 80mg of 2, 7-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9, 9-spirobifluorene (Spiro-MeOTAD) was weighed and dissolved in 1mL of chlorobenzene, and sufficiently stirred for dissolution; then, 30. Mu.L of 4-tert-butylpyridine (TBP) solution and 35. Mu.L of Li-TFSI solution were added thereto, and the mixture was sufficiently stirred to obtain a hole transport layer solution.
Uniformly spreading 50 mu L of hole transport layer solution on the surface of the perovskite thin film, and setting the parameters of a spin coater as follows: the speed was 3000rpm/min for 30s, giving a hole transport layer (50 nm).
Transferring the whole containing the hole transport layer into a thermal evaporation device, wherein the vacuum degree reaches 1 × 10 -5 Starting to evaporate an electrode (Au) under the condition of Pa, wherein the thickness of the Au is 100nm; and then placing the mixture in an oxygen glove box for overnight, and oxidizing to obtain the battery.
Comparative example 2
The second step without addition of guanidine salt is comparative example 2. Comparative example 2 is different from comparative example 1 in that the cell structures used in the two examples are different.
The test was carried out according to the method of example 1, and the results are as follows.
Example 3
Substrate: 1.5cm x 1.5cm FTO film (glass thickness 1mm, FTO film layer thickness 200 nm); the FTO glass was cleaned with ethanol, isopropyl alcohol (IPA) and acetone for 30 minutes, and dried with a nitrogen gun.
NiO arranged on the surface of the substrate x A film (thickness 20 nm) obtained by magnetron sputtering; the NiO is formed x The film was treated with oxygen plasma for 10min at 2kW.
Configuring mass fraction20% perovskite layer precursor solution (CsBr: 0.15mol/L, pbI) 2 :1mol/L, FAI:0.85 mol/L), and the solvent is DMF + DMSO (volume ratio 8: 2) Uniformly stirring to obtain a perovskite precursor solution, adding 3mg of guanidine hydrochloride into 6mL of chlorobenzene, and uniformly stirring to obtain a reverse solution (second solution) with a modification effect; and preparing a perovskite active layer on the surface of the substrate by taking 50 mu L of perovskite precursor solution and adopting a spin coating method, wherein the spin coating speed is 3500 rpm, and the time is 40s. When the spin coating time reaches 10s, quickly dripping 800 mu L of second solution on a spin coating sheet, and after the spin coating is finished, carrying out thermal annealing at 150 ℃ for 15min to obtain a perovskite thin film (400 nm);
and (3) evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite thin film to obtain the battery.
Transferring the whole containing the electron transport layer to a thermal evaporation device with a vacuum degree of 1 × 10 -5 Starting to evaporate a copper electrode (Cu) under the condition of Pa, wherein the thickness of the Cu electrode is 100nm; and obtaining the battery.
Comparative example 3
The second step without addition of guanidine salt is comparative example 3. The test was carried out according to the method of example 1, and the results are as follows.
From the above embodiments, the coating of the first step is formed by using the perovskite precursor solution; the perovskite layer is prepared by dissolving a specific guanidine salt in an anti-solvent or in a second step solution. The method has simple and convenient step and process, can realize controllable guanidine salt modification gradient, has the most modification functional groups on the surface of the perovskite, avoids generating additional interfaces, is beneficial to adjusting the work function distribution of the perovskite layer, is beneficial to charge transmission, and thus improves the performance of the perovskite solar cell.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. The preparation method of the perovskite film layer is characterized by comprising the following steps:
applying a perovskite precursor solution on the surface of the transmission layer film to form a first coating;
providing an organic salt solution containing guanidine salt, coating the organic salt solution on the surface of the formed first coating, and annealing to obtain a perovskite film layer modified by guanidine salt; the guanidine salt is selected from one or more of guanidine iodide, guanidine methyl, guanidine hydrochloride, N-Boc-guanidine, guanidine acetate, diphenyl guanidine and guanidine sulfate.
2. The method for preparing a perovskite film layer according to claim 1, wherein the concentration of the guanidine salt in the organic salt solution containing the guanidine salt is less than 20mg/L, wherein the solvent is isopropanol or chlorobenzene.
3. The method for preparing a perovskite film layer according to claim 1, wherein the organic salt solution containing a guanidine salt further contains a perovskite organic active ingredient.
4. The method for preparing a perovskite film layer as claimed in claim 1, wherein the perovskite precursor solution is a lead-containing precursor solution and/or a cesium-containing precursor solution.
5. The method for producing a perovskite film layer as claimed in claim 1, wherein the transport layer thin film is an electron transport layer thin film or a hole transport layer thin film.
6. The preparation method of the perovskite film layer as claimed in any one of claims 1 to 5, wherein the thickness of the perovskite film layer modified by the guanidine salt is 400 to 500nm.
7. The preparation method of the perovskite film layer as claimed in claim 6, wherein the temperature of the annealing treatment is 100 to 200 ℃.
8. A perovskite solar cell, wherein the perovskite absorption layer is a perovskite film layer obtained by the preparation method of any one of claims 1 to 7.
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| CN109065723A (en) * | 2018-07-13 | 2018-12-21 | 华中科技大学 | A method of solar battery open-circuit voltage is promoted based on additive |
| US20200157125A1 (en) * | 2018-11-21 | 2020-05-21 | Hee Solar, L.L.C. | Enhanced Perovskite Materials for Photovoltaic Devices |
| WO2020206873A1 (en) * | 2019-04-11 | 2020-10-15 | 浙江大学 | Film thickness-insensitive inverted-type thick-film two-dimensional hybrid perovskite solar cell and preparation method thereof |
| CN111599923A (en) * | 2020-05-15 | 2020-08-28 | 成都新柯力化工科技有限公司 | Method for improving efficiency of perovskite solar cell |
| CN111933801A (en) * | 2020-08-12 | 2020-11-13 | 南昌大学 | Reverse planar perovskite solar cell device with guanidine hexafluorophosphate interface modification layer and preparation method thereof |
| CN113241409A (en) * | 2021-04-19 | 2021-08-10 | 陕西师范大学 | Perovskite solar cell and preparation method |
| CN114267789A (en) * | 2021-11-29 | 2022-04-01 | 南昌大学 | Method for simultaneously improving open-circuit voltage and stability of full-textured perovskite/crystalline silicon laminated solar cell |
| CN114156414A (en) * | 2021-11-30 | 2022-03-08 | 合肥工业大学 | High-efficiency stable CsPbI3Preparation method of inorganic perovskite battery |
| CN115188893A (en) * | 2022-06-30 | 2022-10-14 | 泉州师范学院 | Perovskite solar cell and preparation method |
| CN115568263A (en) * | 2022-09-28 | 2023-01-03 | 南开大学 | Preparation method of perovskite active layer in solar cell |
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