CN115831911B - Bonding pad structure and electronic device - Google Patents
Bonding pad structure and electronic device Download PDFInfo
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- CN115831911B CN115831911B CN202211625257.7A CN202211625257A CN115831911B CN 115831911 B CN115831911 B CN 115831911B CN 202211625257 A CN202211625257 A CN 202211625257A CN 115831911 B CN115831911 B CN 115831911B
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- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 239000010936 titanium Substances 0.000 claims description 32
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 13
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- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
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- 239000000377 silicon dioxide Substances 0.000 description 7
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- 238000007254 oxidation reaction Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
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- 229910052796 boron Inorganic materials 0.000 description 3
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- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
The embodiment of the application provides a bonding pad structure and an electronic device. The bonding pad structure comprises a substrate, a first insulating film layer, a BPSG insulating film, a barrier layer, a metal electrode and a wire bonding, wherein the first insulating film layer is arranged on one side of the substrate; the BPSG insulating film is arranged on one side of the first insulating film layer, which is far away from the substrate, and a groove structure is formed on the BPSG insulating film and penetrates through the BPSG insulating film; a part of the barrier layer is arranged on one side of the BPSG insulating film far away from the substrate, and the other part of the barrier layer is arranged in the groove structure and is attached to the first insulating film layer; the metal electrode is arranged on one side of the barrier layer away from the substrate, and the wire bonding is arranged on one side of the metal electrode away from the substrate. According to the pad structure provided by the embodiment of the application, the plurality of groove structures are formed on the BPSG insulating film, so that the contact area between the BPSG insulating film and the barrier layer can be reduced, the risk of stripping the metal electrode from the first insulating film layer is reduced, and the reliability of the pad structure is improved.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a pad structure and an electronic device.
Background
In the related art, a semiconductor package process often involves a Wire Bonding (Wire Bonding) operation of connecting electrodes on a Die (Die) with terminals on a Frame or Substrate (Substrate).
In general, the PAD includes a layer structure in which a plurality of layers are stacked, including a BPSG insulating film (Boro-Phospho-Silicate-Glass) on which a Metal electrode (Metal), also called wire bond PAD (wire bond PAD), is disposed, the Metal electrode being connected to an external circuit through wire bonding. In addition to forming the metal electrode, the metal electrode may also be used as a conductive wire, and in order to improve the resistance of the conductive wire EM (Electro migration ), a metal barrier layer (barrier metal) is usually disposed at the lower portion of the metal electrode, and this metal barrier layer generally adopts a structure in which a titanium layer (Ti) and a titanium nitride layer (TiN) are stacked.
Since the process of the BPSG insulating film is CVD (Chemical Vapor Deposition) film formation, oxygen molecules (O2) in the BPSG insulating film are relatively active, and are liable to react with titanium (Ti) of the titanium layer to form titanium oxide (TiO 2), and the adhesion between the titanium oxide and the BPSG insulating film is low. When a wire bond process (wire bond) and wafer-level electrical property test are performed, the metal electrode is pushed and pulled by external force, so that the metal electrode is easily peeled off from the BPSG insulating film layer due to the excessively low adhesion between the titanium layer and the BPSG insulating film, and the reliability of a bonding pad structure is reduced and even fails after long-term use.
Disclosure of Invention
The application provides a bonding pad structure and an electronic device, which are used for reducing the risk of stripping a metal electrode from a BPSG insulating film and improving the reliability of the bonding pad structure.
In order to solve the technical problems, the application adopts the following technical scheme:
an embodiment of a first aspect of the present application provides a pad structure, where the pad structure includes a substrate, a first insulating film layer, a BPSG insulating film, a barrier layer, a metal electrode, and a wire, where the first insulating film layer is disposed on one side of the substrate; the BPSG insulating film is arranged on one side of the first insulating film layer, which is far away from the substrate, and a groove structure is formed on the BPSG insulating film and penetrates through the BPSG insulating film; a part of the barrier layer is arranged on one side of the BPSG insulating film far away from the substrate, and the other part of the barrier layer is arranged in the groove structure and is attached to the first insulating film layer; the metal electrode is arranged on one side of the barrier layer away from the substrate, and the wire bonding is arranged on one side of the metal electrode away from the substrate.
The application has the beneficial effects that:
in this embodiment, in the film forming process of the pad structure, a first insulating film layer is first formed on the substrate, and the material of the first insulating film layer is mainly silicon dioxide formed by thermal oxidation. Next, a BPSG insulating film, which is silicon dioxide doped with boron and phosphorus, is formed on the first insulating film layer. Then, a trench structure is formed on the BPSG insulating film, wherein the bottom of the trench structure is a first insulating film layer, that is, the trench structure penetrates through the BPSG insulating film. Next, a barrier layer is formed on the BPSG insulating film, a part of the barrier layer covers a side of the BPSG insulating film remote from the substrate, and the other part of the barrier layer covers an inner wall of the trench structure, the barrier layer being a laminated structure of a Ti (titanium) layer and TiN (titanium nitride). And forming a metal electrode on one side of the barrier layer away from the substrate, and bonding wires on the metal electrode, wherein the metal electrode is connected with an external loop through bonding wires.
According to the pad structure in the embodiment of the application, a plurality of groove structures are formed on the BPSG insulating film, a part of the barrier layer covers one side of the BPSG insulating film far away from the substrate, and the other part of the barrier layer covers the inner wall of the groove structure. Thus, the TiO2 which is an easily-stripped film layer and is generated by the chemical reaction between Ti in the barrier layer and O2 in the BPSG insulating film is reduced, and the adhesion between the barrier layer and the insulating film is improved. The risk of delamination of the metal electrode from the first insulating film layer upon layer is reduced when performing wire bond and wafer level electrical property testing. Moreover, the groove structure enables the contact surface of the barrier layer and the metal electrode to form an uneven structure, so that the adhesive force between the barrier layer and the metal electrode can be enhanced, the risk of stripping the metal electrode from the first insulating film layer is reduced, and the reliability of the bonding pad structure is improved.
According to the pad structure in the embodiment of the application, the pad structure can be further provided with the following technical characteristics:
in some embodiments of the present application, the number of the groove structures is plural, and the dimensions of the plural groove structures in the horizontal direction are the same.
In some embodiments of the application, the number of groove structures is one, and the orthographic projection of the wire on the substrate is located within the orthographic projection of the groove structures on the substrate.
In some embodiments of the application, the number of the groove structures is a plurality, and the orthographic projection of the wire on the substrate is positioned in the orthographic projection of one of the groove structures on the substrate.
In some embodiments of the application, a portion of the metal electrode fills into the trench structure.
In some embodiments of the application, the pad structure further comprises a filler layer disposed within the trench structure, and the filler layer is located on a side of the barrier layer away from the sidewalls of the trench structure.
In some embodiments of the application, the material of the filler layer is tungsten.
In some embodiments of the application, the barrier layer comprises a titanium layer and a titanium nitride layer, the titanium nitride layer being disposed on a side of the titanium layer remote from the substrate.
In some embodiments of the application, the pad structure further comprises a second insulating film layer, the second insulating film layer is located on a side of the first insulating film layer away from the substrate, and the groove structure penetrates through the second insulating film layer.
Embodiments of the second aspect of the present application provide an electronic device comprising the pad structure of any of the embodiments of the first aspect.
According to the electronic device in the embodiment of the present application, since the electronic device has the pad structure in any embodiment of the first aspect, the electronic device also has the beneficial effects of any embodiment of the first aspect, which is not described herein again.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the application, and other embodiments may be obtained according to these drawings to those skilled in the art.
FIG. 1 is a schematic diagram of a related art bonding pad structure;
FIG. 2 is a schematic diagram of a pad structure according to a first embodiment of the present application;
FIG. 3 is a cross-sectional view of the trough structure of one embodiment of FIG. 2 taken in a horizontal direction;
FIG. 4 is a cross-sectional view of the trough structure of another embodiment in FIG. 2 taken along the horizontal direction;
FIG. 5 is a schematic diagram of a pad structure according to a second embodiment of the present application;
FIG. 6 is a cross-sectional view of the trough structure of one embodiment of FIG. 5 taken in a horizontal direction;
FIG. 7 is a cross-sectional view of the slot structure of another embodiment in FIG. 5 taken along the horizontal direction;
FIG. 8 is a schematic diagram of a pad structure according to a third embodiment of the present application;
FIG. 9 is a schematic diagram of a bonding pad structure according to a fourth embodiment of the present application;
FIG. 10 is a schematic diagram of a fifth embodiment of a bonding pad structure according to the present application;
fig. 11 is a schematic structural view of a pad structure according to a sixth embodiment of the present application.
The reference numerals are as follows:
a 100 substrate; 210 a first insulating film layer; 220 a second insulating film layer; 300BPSG insulating film; 400 groove structure; 410 a fill layer; 500 barrier layers; 510 titanium layers; 520 titanium nitride layer; 600 metal electrodes; 700 wire bonding.
Detailed Description
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described, and it is apparent that the drawings in the following description are only some embodiments of the present application and other embodiments may be obtained according to the drawings for those skilled in the art.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. Based on the embodiments of the present application, all other embodiments obtained by the person skilled in the art based on the present application are included in the scope of protection of the present application.
In the related art, a semiconductor package process often involves a Wire Bonding (Wire Bonding) operation of connecting electrodes on a Die (Die) with terminals on a Frame or Substrate (Substrate).
As shown in fig. 1, in general, the PAD includes a layer structure in which a plurality of layers are stacked, including a BPSG insulating film 300, and a Metal electrode 600 (Metal), also called a wire bond PAD (wire bond PAD), is disposed on the BPSG insulating film 300, and the Metal electrode 600 is connected to an external circuit by wire bonding. At the same time of forming the metal electrode 600, the metal electrode 600 may also be used as a conductive line, and in order to improve the resistance of the conductive line EM (Electro migration ), the bottom of the metal electrode 600 is typically a metal barrier layer (barrier metal), which generally adopts a stacked structure of a titanium layer 510 (Ti) and a titanium nitride layer 520 (TiN).
Because oxygen molecules (O2) in the BPSG insulating film 300 are relatively active, titanium (Ti) of the titanium layer 510 is easy to react to generate titanium dioxide (TiO 2), and the adhesion between the titanium dioxide and the BPSG insulating film 300 is low, when a wire bond process (wire bond) and a wafer-level electrical property test are performed, the metal electrode 600 is pushed and pulled by an external force, and the adhesion between the titanium layer 510 and the BPSG insulating film 300 is too low, so that the metal electrode 600 is easily peeled from the BPSG insulating film 300, and the reliability of the pad structure is reduced or even fails after long-term use.
In view of this, as shown in fig. 2 to 9, an embodiment of the first aspect of the present application proposes a pad structure including a substrate 100, a first insulating film layer 210, a BPSG insulating film 300, a barrier layer 500, a metal electrode 600, and a wire 700, the first insulating film layer 210 being disposed on one side of the substrate 100; the BPSG insulating film 300 is disposed on a side of the first insulating film layer 210 away from the substrate 100, and a groove structure 400 is formed on the BPSG insulating film 300, the groove structure 400 penetrating the BPSG insulating film 300; a part of the barrier layer 500 is disposed on a side of the BPSG insulating film 300 remote from the substrate 100, and another part of the barrier layer 500 is disposed in the trench structure 400 and is bonded to the first insulating film layer 210; the metal electrode 600 is disposed on a side of the barrier layer 500 away from the substrate 100, and the wire 700 is disposed on a side of the metal electrode 600 away from the substrate 100.
In this embodiment, in the film forming process of the pad structure, the first insulating film layer 210 may be formed on the substrate 100 first, and the material of the first insulating film layer 210 is mainly silicon dioxide formed by thermal oxidation. Next, a BPSG insulating film 300, which is silicon dioxide doped with boron and phosphorus, is formed on the first insulating film layer 210. Next, a trench structure 400 is formed on the BPSG insulating film 300, and the bottom of the trench structure 400 is the first insulating film layer 210, that is, the trench structure 400 penetrates the BPSG insulating film 300. Next, a barrier layer 500 is formed on the BPSG insulating film 300, a part of the barrier layer 500 covers a side of the BPSG insulating film 300 remote from the substrate 100, another part of the barrier layer 500 covers an inner wall of the trench structure 400, and the barrier layer 500 is a laminated structure of a Ti (titanium) layer and TiN (titanium nitride). Next, a metal electrode 600 is formed on a side of the barrier layer 500 away from the substrate 100, and a wire 700 is bonded on the metal electrode 600, and the metal electrode 600 is connected to an external circuit through the wire 700.
According to the pad structure of the embodiment of the present application, a plurality of groove structures 400 are formed on the BPSG insulating film 300, and a part of the barrier layer 500 covers a side of the BPSG insulating film 300 away from the substrate 100, and another part of the barrier layer 500 covers an inner wall of the groove structures 400, the pad structure of the embodiment reduces a contact area between the BPSG insulating film 300 and the barrier layer 500 compared to the conventional pad structure. In this way, the easily-peeled film TiO2 generated by the chemical reaction between Ti in the barrier layer 500 and O2 in the BPSG insulating film 300 is reduced, and the adhesion between the barrier layer 500 and the BPSG insulating film 300 is improved. The risk of delamination of the metal electrode 600 from the first insulating film layer 210 is reduced when performing a wire bond (wire bond) and wafer level electrical property testing. In addition, the groove structure 400 forms the rugged structure on the contact surface of the barrier layer 500 and the metal electrode 600, so that the adhesion between the barrier layer 500 and the metal electrode 600 can be enhanced, the risk of peeling the metal electrode 600 from the first insulating film layer 210 can be reduced, and the reliability of the pad structure can be improved.
Referring to fig. 2 to 4, in some embodiments of the present application, the number of the groove structures 400 is plural, and the dimensions of the groove structures 400 along the horizontal direction are the same. In the present embodiment, the number of the trench structures 400 may be plural, and it is understood that when the plural trench structures 400 are formed on the BPSG insulating film 300, the contact area between the BPSG insulating film 300 and the barrier layer 500 can be further reduced. The dimensions of the plurality of trench structures 400 along the horizontal direction are the same, and the horizontal direction refers to the direction along the plane of the substrate 100, for example, referring to fig. 3, fig. 3 is a cross-sectional view of the trench structure 400 in one embodiment of the horizontal direction in fig. 2, the cross-section of the trench structure 400 may be circular, that is, the dimensions of the vertical cross-section of the trench structure 400 formed on the BPSG insulating film 300 may be the same, so that the regular trench structure 400 is formed, thereby reducing the risk of peeling the metal electrode 600 from the first insulating film layer 210, and improving the reliability of the pad structure. Referring to fig. 4, fig. 4 is a cross-sectional view of a trench structure 400 in another embodiment of fig. 2 along a horizontal direction, in which the trench structure 400 is arranged in a planar array where the BPSG insulating film 300 is located, that is, the trench structure 400 is arranged regularly in a plane where the BPSG insulating film 300 is located, for example, in fig. 2, along a longitudinal section of the pad structure, the trench structure 400 separates the BPSG insulating film 300 into a plurality of sub-BPSG insulating films 300 with the same pitch dimension, and the longitudinal sections of the plurality of sub-BPSG insulating films 300 are also the same along the horizontal direction, so that when the dimensions of the plurality of sub-BPSG insulating films 300 along the horizontal direction are the same, and the distances between the plurality of sub-BPSG insulating films 300 are also the same, a regular pattern is formed on a side of the BPSG insulating film 300 away from the substrate, and after the BPSG insulating film 300 and the metal electrode 600 are formed on the side of the BPSG insulating film 300, the contact portion between the BPSG insulating film 300 and the barrier layer 500 and the metal electrode 600 are both regular patterns, so that the BPSG insulating film 300 and the barrier layer 500 and the metal electrode 600 are connected to the metal electrode 600 more stably.
In a specific embodiment of the present application, the number of trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located within the orthographic projection of the trench structures 400 on the substrate 100. In the present embodiment, the number of the trench structures 400 may be only one, and it is understood that the contact area between the BPSG insulating film 300 and the barrier layer 500 can be reduced as long as the trench structures 400 are formed on the BPSG insulating film 300 and the trench structures 400 penetrate the BPSG insulating film 300. For example, referring to fig. 6, fig. 6 is a transverse cross-sectional view of the groove structure 400 in one embodiment of fig. 5 along the horizontal direction, and the cross-section of the groove structure 400 may be circular. Referring to fig. 7, fig. 7 is a cross-sectional view of a groove structure 400 in another embodiment along a horizontal direction, and the cross-section of the groove structure 400 may be square. In addition, the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the groove structure 400 on the substrate 100, that is, the orthographic projection of the contact surface of the wire 700 and the metal electrode 600 on the substrate 100 is also located in the orthographic projection of the groove structure 400 on the substrate 100, so that the stability of the pad structure can be increased.
In a specific embodiment of the present application, the number of trench structures 400 is plural, and the orthographic projection of the wire 700 on the substrate 100 is located within the orthographic projection of one of the trench structures 400 on the substrate 100. In the present embodiment, the number of the groove structures 400 is plural, and similarly to the above-described embodiment, the cross section of the groove structure 400 in the present embodiment is a pattern formed by combining a circle and a circular ring, a pattern formed by combining a square and a square ring, or the like, which is not particularly limited in the present embodiment. By providing the plurality of groove structures 400, the contact area between the BPSG insulating film 300 and the barrier layer 500 can be further reduced, so that the easily-stripped film layer TiO2 generated by the chemical reaction between Ti in the barrier layer 500 and O2 in the BPSG insulating film 300 is reduced, and the adhesion between the barrier layer 500 and the BPSG insulating film 300 is improved. When the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of one of the groove structures 400 on the substrate 100, the orthographic projection of the contact surface of the wire 700 and the metal electrode 600 on the substrate 100 is also located in the orthographic projection of the groove structure 400 on the substrate 100, so that the connection reliability of the wire 700 and the metal electrode 600 can be ensured, and the stability of the pad structure can be increased.
In a specific embodiment of the present application, the pad structure further includes a filling layer 410, the filling layer 410 is disposed in the trench structure 400, and the filling layer 410 is located at a side of the barrier layer 500 away from the sidewall of the trench structure 400. In this embodiment, after the trench structure 400 is formed on the BPSG insulating film 300 and the barrier layer 500 is formed on the side of the trench structure 400 and the side of the BPSG insulating film 300 away from the substrate 100, the filling layer 410 is formed in the trench structure 400 to make the surface of the trench structure 400 flat, and then the metal electrode 600 is formed on the filling layer 410 and the side of the barrier layer 500 away from the substrate 100. In this embodiment, a part of the metal electrode 600 is adhered to the barrier layer 500, and another part of the metal electrode 600 is adhered to the filling layer 410, so that a person skilled in the art can select the material of the filling layer 410 to have a stronger adhesion with the metal electrode 600 according to the material used for the metal electrode 600. The material of the metal electrode 600 and the filling layer 410 is not particularly limited in this embodiment.
In one embodiment of the present application, the material of the fill layer 410 is tungsten. In this embodiment, tungsten is not corroded by air at normal temperature, and chemical properties are relatively stable, so when the material of the filling layer 410 is tungsten, a part of the metal electrode 600 is attached to the barrier layer 500, and another part of the metal electrode 600 is attached to tungsten, so that adhesion force between the metal electrode 600 and tungsten can be increased.
In some embodiments of the present application, barrier layer 500 includes titanium layer 510 and titanium nitride layer 520, titanium nitride layer 520 being disposed on a side of titanium layer 510 remote from substrate 100. In this embodiment, the barrier layer 500 further includes a titanium layer 510 and a titanium nitride layer 520, and titanium nitride has good conductivity, which is in contact with the metal electrode 600, and titanium has good corrosion resistance, and the EM (Electro migration) resistance of the wire can be improved by providing the barrier layer 500 as a laminated structure of the titanium layer 510 and the titanium nitride layer 520.
In some embodiments of the present application, the pad structure further includes a second insulating film layer 220, the second insulating film layer 220 is located on a side of the first insulating film layer 210 away from the substrate 100, and the trench structure 400 penetrates the second insulating film layer 220. In this embodiment, the material of the second insulating film 220 is the same as that of the first insulating film 210, for example, the material of the first insulating film 210 and the material of the second insulating film 220 may be silicon dioxide (SiO 2) formed by thermal oxidation. Referring to fig. 8, the number of the trench structures 400 may be plural, and referring to fig. 9, the number of the trench structures 400 may be one, in both embodiments, the trench structures 400 penetrate through the second insulating film layer 220 and the BPSG insulating film 300, and the bottom of the trench structures 400 extends to the first insulating film layer 210. When the first insulating film layer 210 and the second insulating film layer 220 are the same material, the production process can be simplified, and the production cost of the pad structure can be reduced.
As shown in fig. 10 and 11, in one particular embodiment of the application, a portion of the metal electrode 600 is located within the trench structure 400. In this embodiment, a portion of the metal electrode 600 extends into the trench structure 400. In a specific manufacturing process, after the groove structure 400 is formed on the BPSG insulating film 300, the barrier layer 500 is formed on the side of the groove structure 400 away from the substrate 100, and then the metal electrode 600 is formed in the groove structure 400 and on the side of the barrier layer 500 away from the substrate 100, so that a part of the metal electrode 600 is filled into the groove structure 400, that is, the contact surface between the metal electrode 600 and the barrier layer 500 is in a rugged structure, thereby increasing the structural stability of the pad structure and reducing the risk of peeling the metal electrode 600 from the barrier layer 500. In one embodiment of the present application, as shown in fig. 10, the pad structure includes only the first insulating film layer 210. In another embodiment of the present application, as shown in fig. 11, the pad structure includes a first insulating film layer 210 and a second insulating film layer 220, in both embodiments, the number of the trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the trench structures 400 on the substrate 100, so that the connection reliability of the wire 700 and the metal electrode 600 can be ensured, and the stability of the pad structure is increased.
According to the above embodiments, the present application provides the following six specific examples:
as shown in fig. 2, in the first embodiment, the pad structure includes only the first insulating film layer 210, the number of the groove structures 400 is plural, and the material of the filling layer 410 is tungsten.
As shown in fig. 5, in the second embodiment, the pad structure includes only the first insulating film layer 210, the number of the trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the trench structures 400 on the substrate 100, and the material of the filling layer 410 is tungsten.
As shown in fig. 8, in the third embodiment, the pad structure includes a first insulating film layer 210 and a second insulating film layer 220, the number of the trench structures 400 is plural, and the material of the filling layer 410 is tungsten.
As shown in fig. 9, in the fourth embodiment, the pad structure includes the first insulating film layer 210 and the second insulating film layer 220, the number of the trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the trench structures 400 on the substrate 100, and the material of the filling layer 410 is tungsten.
As shown in fig. 10, in the fifth embodiment, the pad structure includes only the first insulating film layer 210, the number of the trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the trench structures 400 on the substrate 100, and the material of the filling layer 410 is the same as the material of the metal electrode 600.
As shown in fig. 11, in the sixth embodiment, the pad structure includes the first insulating film layer 210 and the second insulating film layer 220, the number of the trench structures 400 is one, and the orthographic projection of the wire 700 on the substrate 100 is located in the orthographic projection of the trench structures 400 on the substrate 100, and the material of the filling layer 410 is the same as the material of the metal electrode 600.
It will be appreciated by those skilled in the art that the above embodiments are merely illustrative, not all embodiments of the present application, and that other embodiments may be combined to form other embodiments according to the embodiments of the present application, and that other embodiments are within the scope of the present application.
Embodiments of the second aspect of the present application provide an electronic device comprising the pad structure of any of the embodiments of the first aspect.
According to the electronic device in the embodiment of the application, the electronic device comprises the bonding pad structure in any embodiment of the first aspect, so that the electronic device also has the beneficial effects of any embodiment of the first aspect. Specifically, in the film forming process of the pad structure, the first insulating film layer 210 may be formed on the substrate 100 first, and the material of the first insulating film layer 210 is mainly silicon dioxide formed by thermal oxidation. Next, a BPSG insulating film 300, which is silicon dioxide doped with boron and phosphorus, is formed on the first insulating film layer 210. Next, a trench structure 400 is formed on the BPSG insulating film 300, and the bottom of the trench structure 400 is the first insulating film layer 210, that is, the trench structure 400 penetrates the BPSG insulating film 300. Next, a barrier layer 500 is formed on the BPSG insulating film 300, a part of the barrier layer 500 covers a side of the BPSG insulating film 300 remote from the substrate 100, another part of the barrier layer 500 covers an inner wall of the trench structure 400, and the barrier layer 500 is a laminated structure of a Ti (titanium) layer and TiN (titanium nitride). Next, a metal electrode 600 is formed on a side of the barrier layer 500 away from the substrate 100, and a wire 700 is bonded on the metal electrode 600, and the metal electrode 600 is connected to an external circuit through the wire 700.
According to the electronic device of the embodiment of the present application, a plurality of trench structures 400 are formed on the BPSG insulating film 300, and a part of the barrier layer 500 covers a side of the BPSG insulating film 300 away from the substrate 100, and another part of the barrier layer 500 covers an inner wall of the trench structure 400, and the pad structure of the embodiment reduces a contact area between the BPSG insulating film 300 and the barrier layer 500 compared to a conventional pad structure. In this way, the easily-peeled film TiO2 generated by the chemical reaction between Ti in the barrier layer 500 and O2 in the BPSG insulating film 300 is reduced, and the adhesion between the barrier layer 500 and the BPSG insulating film 300 is improved. The risk of delamination of the metal electrode 600 from the first insulating film layer 210 is reduced when performing a wire bond (wire bond) and wafer level electrical property testing. Further, the groove structure 400 forms the contact surface of the barrier layer 500 and the metal electrode 600 into an uneven structure, which can enhance the adhesion force of the barrier layer 500 and the metal electrode 600, thereby reducing the risk of peeling the metal electrode 600 from the first insulating film layer 210, improving the reliability of the pad structure, and thus improving the structural reliability of the electronic device having the pad structure.
While the application has been described with reference to several particular embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from its scope. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (5)
1. A pad structure, the pad structure comprising:
a substrate;
a first insulating film layer provided on one side of the substrate;
a BPSG insulating film, wherein the BPSG insulating film is arranged on one side, far away from the substrate, of the first insulating film layer, a groove structure is formed on the BPSG insulating film, the groove structure penetrates through the BPSG insulating film, the cross section of the groove structure is a pattern formed by combining a circle and a circular ring, or the cross section of the groove structure is a pattern formed by combining a square and a square ring;
a barrier layer, a part of which is arranged on one side of the BPSG insulating film far away from the substrate, and the other part of which is arranged in the groove structure and is attached to the first insulating film layer;
a metal electrode disposed on a side of the barrier layer remote from the substrate;
the wire bonding is arranged on one side, far away from the substrate, of the metal electrode, and the orthographic projection of the wire bonding on the substrate is positioned in the orthographic projection of one of the groove structures on the substrate;
the pad structure further comprises a filling layer, wherein the filling layer is arranged in the groove structure, and the filling layer is positioned on one side of the barrier layer away from the side wall of the groove structure;
the bonding pad structure further comprises a second insulating film layer, the second insulating film layer is located on one side, far away from the substrate, of the first insulating film layer, the groove structure penetrates through the second insulating film layer, one side of the second insulating film layer is attached to the first insulating film layer, and the other side of the second insulating film layer is attached to the BPSG insulating film.
2. The pad structure of claim 1, wherein the number of groove structures is a plurality, and wherein the orthographic projection of the wire bond on the substrate is located within the orthographic projection of one of the groove structures on the substrate.
3. The pad structure of claim 1, wherein a portion of the metal electrode is located within the trench structure.
4. A pad structure according to any one of claims 1 to 3, wherein the barrier layer comprises a titanium layer and a titanium nitride layer, the titanium nitride layer being provided on a side of the titanium layer remote from the substrate.
5. An electronic device comprising a pad structure according to any one of claims 1 to 4.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211625257.7A CN115831911B (en) | 2022-12-16 | 2022-12-16 | Bonding pad structure and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211625257.7A CN115831911B (en) | 2022-12-16 | 2022-12-16 | Bonding pad structure and electronic device |
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| CN115831911A CN115831911A (en) | 2023-03-21 |
| CN115831911B true CN115831911B (en) | 2023-10-27 |
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|---|---|---|---|---|
| US5661081A (en) * | 1994-09-30 | 1997-08-26 | United Microelectronics Corporation | Method of bonding an aluminum wire to an intergrated circuit bond pad |
| JP2000100816A (en) * | 1998-09-18 | 2000-04-07 | Seiko Epson Corp | Semiconductor device |
| TW403933B (en) * | 1998-05-13 | 2000-09-01 | Seiko Epson Corp | Semiconductor device and producing method therefor |
| US6417568B1 (en) * | 1999-03-12 | 2002-07-09 | Nec Corporation | Semiconductor device |
| CN103943682A (en) * | 2013-01-21 | 2014-07-23 | 三星显示有限公司 | Thin-film transistor and display device having the same |
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2022
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661081A (en) * | 1994-09-30 | 1997-08-26 | United Microelectronics Corporation | Method of bonding an aluminum wire to an intergrated circuit bond pad |
| TW403933B (en) * | 1998-05-13 | 2000-09-01 | Seiko Epson Corp | Semiconductor device and producing method therefor |
| JP2000100816A (en) * | 1998-09-18 | 2000-04-07 | Seiko Epson Corp | Semiconductor device |
| US6417568B1 (en) * | 1999-03-12 | 2002-07-09 | Nec Corporation | Semiconductor device |
| CN103943682A (en) * | 2013-01-21 | 2014-07-23 | 三星显示有限公司 | Thin-film transistor and display device having the same |
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| Publication number | Publication date |
|---|---|
| CN115831911A (en) | 2023-03-21 |
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