CN115824274B - Light detection circuit and photoelectric system - Google Patents
Light detection circuit and photoelectric system Download PDFInfo
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Abstract
The embodiment of the application discloses photo detection circuitry and photoelectric system, photo detection circuitry includes photoelectric conversion circuitry, front-end amplifier, clamping circuit and temperature drift compensating circuit, photoelectric conversion circuitry has voltage bias end and signal output part that is used for switching in bias voltage, front-end amplifier has and amplifies the input and amplify the output, amplify the input and signal output part is connected in first node, clamping circuit has clamping input and clamping output, clamping input is used for switching in clamping voltage, clamping output is connected in first node, temperature drift compensating circuit has compensation input and compensation output, compensation input is used for switching in temperature signal, compensation output is connected and is used for outputting compensation voltage with clamping input. The design can enable the bias voltage given to the two ends of the PN junction in the clamping circuit to be equal to the actual voltage drop of the PN junction, so that the PN junction in the clamping circuit works stably, and the overall stability of the light detection circuit and the photoelectric system is further enhanced.
Description
Technical Field
The application relates to the field of photoelectric technology, in particular to a light detection circuit and a photoelectric system.
Background
A signal amplifying circuit is designed in a photoelectric detection system such as a laser radar detection system or an infrared detection system, the dynamic range of the signal amplifying circuit in the conventional photoelectric detection system is insufficient, when the energy carried by light reflected by a target object is overlarge, the signal amplifying circuit is in a saturated state, when the signal amplifying circuit is in the saturated state, normal amplification cannot be carried out on a signal, the photoelectric detection system is in a dead zone state which cannot be detected, and the saturation recovery time (namely, the time for recovering from the saturated state to the linear amplification state) of the signal amplifying circuit is too long, so that the photoelectric detection system is in the dead zone state which cannot be continuously detected for a long time.
Disclosure of Invention
The embodiment of the application provides a photodetection circuit and a photoelectric system, which can enable bias voltage given to two ends of a PN junction in a clamping circuit to be equal to actual voltage drop of the PN junction, so that the PN junction in the clamping circuit works stably, and the overall stability of the photodetection circuit is further enhanced.
In a first aspect, embodiments of the present application provide a light detection circuit; the photoelectric conversion circuit is provided with a voltage bias end and a signal output end, the voltage bias end is used for being connected with bias voltage, the signal output end is connected with the amplifying input end and the signal output end, the amplifying input end is connected with the first node, the clamping circuit is provided with a clamping input end and a clamping output end, the clamping input end is used for being connected with clamping voltage, the clamping output end is connected with the first node, the temperature drift compensation circuit is provided with a compensation input end and a compensation output end, the compensation input end is used for being connected with a temperature signal, and the compensation output end is connected with the clamping output end and is used for outputting compensation voltage.
Based on the photodetection circuit of this application embodiment, temperature signal is inserted to temperature drift compensating circuit's compensation input, temperature drift compensating circuit converts this temperature signal into compensation voltage, this compensation voltage is output from temperature drift compensating circuit's compensation output and flows in through clamp circuit's clamp input, compensate clamp circuit, so can make each temperature signal that clamp circuit corresponds under each temperature, after temperature drift compensating circuit handles, all correspond there is a compensation voltage, this compensation voltage effect is after clamp circuit's clamp input, can make the offset voltage that gives PN junction both ends in the clamp circuit equal to PN junction's actual pressure drop, thereby make PN junction job stabilization in the clamp circuit, and then strengthen this photodetection circuit's overall stability.
In some embodiments, the temperature drift compensation circuit includes an operational amplifier, a first resistor, and a second resistor, wherein an inverting input terminal of the operational amplifier is connected to the reference voltage, a first terminal of the first resistor is connected to the compensation input terminal, a second terminal of the first resistor is connected to the second node with an in-phase input terminal of the operational amplifier, a first terminal of the second resistor is connected to the second node, and a second terminal of the second resistor is connected to an output terminal of the operational amplifier and to the compensation output terminal.
Based on the above embodiment, the compensation input end of the temperature drift compensation circuit is connected to the temperature signal, the amplification factor of the operational amplifier can be set by adjusting the resistance values of the first resistor and the second resistor, the output end of the operational amplifier can obtain the compensation voltage corresponding to the temperature signal, and after the compensation voltage is connected to the clamping input end of the clamping circuit, the bias voltage given to the two ends of the PN junction in the clamping circuit can be equal to the actual voltage drop of the PN junction, so that the clamping circuit is correspondingly provided with a compensation voltage after being processed by the temperature drift compensation circuit at different temperatures, and the compensation voltage enables the PN junction in the clamping circuit to work stably, thereby enhancing the overall stability of the light detection circuit.
In some embodiments, the temperature drift compensation circuit includes a controller having a compensation input terminal and a compensation output terminal, and the controller pre-stores a correspondence between a temperature signal and a compensation voltage.
Based on the above embodiment, the temperature drift compensation circuit obtains the temperature signal through the controller, the controller obtains the corresponding compensation voltage according to the received temperature signal, and after the compensation output end of the controller outputs and flows into the clamping input end of the clamping circuit, the bias voltage given to the two ends of the PN junction in the clamping circuit can be equal to the actual voltage drop of the PN junction, so that the clamping circuit is correspondingly provided with one compensation voltage after being processed by the controller at different temperatures, and the compensation voltage ensures that the PN junction in the clamping circuit works stably, thereby enhancing the overall stability of the light detection circuit.
In some of these embodiments, the clamp circuit includes a diode having a cathode connected to the clamp output and an anode connected to the clamp input.
Based on the above embodiment, the compensation voltage output by the compensation output end of the temperature drift compensation circuit acts on the anode of the diode, so that the bias voltage at two ends of the PN junction in the diode is equal to the actual voltage drop of the PN junction, so that the diode is correspondingly provided with a compensation voltage at different temperatures, the compensation voltage enables the PN junction in the diode to work stably, and the overall stability of the light detection circuit is further enhanced.
In some of these embodiments, the clamp circuit includes a transistor having a base and a collector connected to the clamp input and an emitter connected to the clamp output.
Based on the above embodiment, the compensation voltage output by the compensation output end of the temperature drift compensation circuit acts on the base of the triode, so that the bias voltage at two ends of the PN junction between the base and the emitter in the triode is equal to the actual voltage drop of the PN junction, so that the triode is correspondingly provided with one compensation voltage at different temperatures, the compensation voltage enables the PN junction between the base and the emitter in the triode to work stably, and the overall stability of the light detection circuit is further enhanced.
In some embodiments, the clamping circuit further includes a third resistor, a fourth resistor, and a first capacitor, the third resistor is connected in series between the clamping input terminal and the base of the triode, the fourth resistor is connected in series between the clamping input terminal and the collector of the triode, the first plate of the first capacitor is connected to the clamping input terminal, and the second plate of the first capacitor is grounded.
Based on the embodiment, the third resistor is designed to have a current limiting function on the current flowing into the base electrode of the triode, so that the triode is well protected; by designing the fourth resistor, the current flowing into the collector electrode of the triode can be limited, so that the triode is well protected; through the design of the first capacitor, the compensation voltage in the clamping circuit can be filtered, so that the stability of the compensation voltage in the clamping circuit is ensured.
In some embodiments, the clamp circuit includes a field effect transistor having a gate and a drain connected to the clamp input and a source connected to the clamp output.
Based on the above embodiment, the compensation voltage output by the compensation output end of the temperature drift compensation circuit acts on the grid electrode of the field effect transistor, so that the bias voltage at two ends of the PN junction between the grid electrode and the source electrode in the field effect transistor is equal to the actual voltage drop of the PN junction, so that the field effect transistor is correspondingly provided with one compensation voltage at different temperatures, the compensation voltage enables the PN junction between the grid electrode and the source electrode in the field effect transistor to work stably, and the overall stability of the light detection circuit is further enhanced.
In some embodiments, the photoelectric conversion circuit includes a photodiode, a fifth resistor, and a second capacitor, wherein a cathode of the photodiode is connected to the signal output terminal, a first end of the fifth resistor is connected to the voltage bias terminal, a second end of the fifth resistor and an anode of the photodiode are connected to the third node, a first plate of the second capacitor is connected to the third node, and a second plate of the second capacitor is grounded.
Based on the above embodiment, by connecting the anode of the photodiode to the voltage bias terminal, applying a reverse bias voltage to the photodiode through the voltage bias terminal so that the photodiode is reverse-broken down in the negative bias mode, at this time, the photodiode can not only convert the optical signal reflected by the target object into a photocurrent signal, but also amplify the photocurrent signal with a gain amplification factor of about 100; by designing a fifth resistor, the fifth resistor plays a role of current limiting to protect the photodiode; by designing the second capacitor, the second capacitor filters the electrical signal in the photoelectric conversion circuit.
In some embodiments, the front-end amplifier includes an amplifier and a sixth resistor, the amplifier is a transimpedance amplifier or a low noise amplifier, the non-inverting input of the amplifier is connected to the amplifying input, the inverting input of the amplifier is grounded, the first end of the sixth resistor is connected to the output of the amplifier, and the second end of the sixth resistor is grounded.
Based on the above embodiment, by designing the amplifier as a transimpedance amplifier, the transimpedance amplifier can amplify the current signal output via the signal output terminal of the photoelectric conversion circuit into a larger voltage signal for output, and at this time, the signal output from the transimpedance amplifier to the subsequent circuit of the photoelectric system is the voltage signal, and the transimpedance amplifier has a larger amplification factor, so that the current signal output from the photoelectric conversion circuit can be amplified into a larger voltage signal. Similarly, by designing the amplifier to be a low-noise amplifier, the electric signal output through the signal output end of the photoelectric conversion circuit can be converted into a larger electric signal, and the low-noise amplifier can amplify the effective signal in the electric signal by multiple without amplifying the noise part in the electric signal, so that the influence of the noise signal on the amplified electric signal can be effectively reduced. By designing the sixth resistor, the sixth resistor has a current limiting effect on the larger electric signal output from the output end of the amplifier, thereby ensuring the stability of the circuit structure of the front-end amplifier.
In a second aspect, an embodiment of the present application provides an optoelectronic system, where the optoelectronic system includes a controller, an optical signal transmitting circuit and an optical signal receiving circuit, where the optical signal transmitting circuit is electrically connected to the controller, and the optical signal receiving circuit includes an analog-to-digital converter, an amplifying circuit and the above optical detection circuit, and the amplifying output ends of the controller, the analog-to-digital converter, the amplifying circuit and the front-end amplifier are sequentially connected.
Based on the photoelectric system in the embodiment of the application, the photoelectric system with the photoelectric detection circuit is provided, and the compensation voltage acts on the back of the clamping input end of the clamping circuit, so that the bias voltage given to the two ends of the PN junction in the clamping circuit is equal to the actual voltage drop of the PN junction, the PN junction in the clamping circuit works stably, and the overall stability of the photoelectric system is further enhanced.
Based on the photodetection circuit and the photoelectric system of the embodiment of the application, the compensation input end of the temperature drift compensation circuit is connected with a temperature signal, the temperature drift compensation circuit converts the temperature signal into a compensation voltage, the compensation voltage is output from the compensation output end of the temperature drift compensation circuit and is input through the clamping input end of the clamping circuit, so that the clamping circuit can be compensated at all temperatures, after being processed by the temperature drift compensation circuit, a compensation voltage is corresponding to the clamping circuit, and after the compensation voltage acts on the clamping input end of the clamping circuit, the bias voltage given to the two ends of the PN junction in the clamping circuit is equal to the actual voltage drop of the PN junction, thereby enabling the PN junction in the clamping circuit to work stably and further enhancing the overall stability of the photodetection circuit.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a light detection circuit according to an embodiment of the present application;
FIG. 2 is a schematic circuit diagram of a light detection circuit in one embodiment of the present application;
FIG. 3 is a schematic diagram of a temperature drift compensation circuit according to another embodiment of the present disclosure;
FIG. 4 is a schematic circuit diagram of a photo-detection circuit according to another embodiment of the present application;
fig. 5 is a schematic diagram of a frame of an optoelectronic assembly in one embodiment of the present application.
Reference numerals: 1. a light detection circuit; 10. a photoelectric conversion circuit; 101. a voltage bias terminal; 102. a signal output terminal; 20. a front-end amplifier; 201. amplifying the input end; 202. an amplifying output; 30. a clamp circuit; 301. a clamp input; 302. a clamp output; 40. a temperature drift compensation circuit; 401. a compensation input; 402. a compensation output; c1, a first capacitor; c2, a second capacitor; r1, a first resistor; r2, a second resistor; r3, a third resistor; r4, a fourth resistor; r5, a fifth resistor; r6, a sixth resistor; z1, a photodiode; z2, triode; q1, a field effect transistor; u11, an amplifier; u12, an operational amplifier; b1, a first node; b2, a second node; b3, a third node; HV, bias voltage; v_bais, clamping voltage; t, a temperature signal; v+, reference voltage; 2. a controller; 21. a transmitting control end; 22. receiving a control end; 3. an analog-to-digital converter; 4. an amplifying circuit; 5. a driving chip; 6. a light emitter; 7. reverse bias power supply regulation circuitry.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
Referring to fig. 1-2, a first aspect of the present application proposes a photo-detection circuit 1, wherein the photo-detection circuit 1 includes a photoelectric conversion circuit 10, a front-end amplifier 20, a clamping circuit 30, and a temperature drift compensation circuit 40.
As shown in fig. 1, the photoelectric conversion circuit 10 is configured to receive light reflected by a target object and convert an optical signal of the light into an electrical signal, and the photoelectric conversion circuit 10 includes a voltage bias terminal 101 and a signal output terminal 102, where the voltage bias terminal 101 is configured to be connected to a bias voltage HV. The electrical signal may be a voltage signal or a current signal, and the signal output terminal 102 may be understood as a port for outputting an electrical signal in the photoelectric conversion circuit 10, and a specific circuit structure of the photoelectric conversion circuit 10 will be described below.
It should be noted that, when the light energy carried by the light reflected by the target object is relatively large, the light can form a relatively large electrical signal after being processed by the photoelectric conversion circuit 10; similarly, when the light reflected by the target object has smaller light energy, the light can form smaller electric signals after being processed by the photoelectric conversion circuit 10. That is, the light energy carried by the light reflected by the target object is positively correlated with the electric signal processed by the photoelectric conversion circuit 10, and the positive correlation may be a linear relationship or a nonlinear relationship. The photoelectric conversion circuit 10 may have a certain electric signal amplifying function.
The front-end amplifier 20 is configured to amplify the electrical signal output from the signal output terminal 102, and the front-end amplifier 20 has an amplifying input terminal 201 and an amplifying output terminal 202, where the amplifying input terminal 201 and the signal output terminal 102 are connected to the first node b1. The amplification input 201 may be understood as a port in the front-end amplifier 20 for receiving the electrical signal output from the signal output 102, and the amplification output 202 may be understood as a port in the front-end amplifier 20 for outputting a larger electrical signal. The specific circuit configuration of the front-end amplifier 20 will be described below. In addition, the amplifying input terminal 201 may be further connected to a subsequent signal processing circuit to implement a detection function of the optoelectronic system.
It should be noted that the electrical signal output via the signal output terminal 102 may be a voltage signal, which may be converted into a larger voltage signal or a larger current signal after being processed by the front-end amplifier 20, and output from the amplifying output terminal 202; of course, the electric signal output via the signal output terminal 102 may be a current signal, which is processed by the front-end amplifier 20, and then converted into a larger voltage signal, or converted into a larger current signal, and output from the amplification output terminal 202.
As shown in fig. 1, the clamp circuit 30 is configured to reduce an electric signal flowing into the amplifying input terminal 201 of the front-end amplifier 20, the clamp circuit 30 has a clamp input terminal 301 and a clamp output terminal 302, the clamp input terminal 301 is configured to be connected to the clamp voltage v_bais, and the clamp output terminal 302 is connected to the first node b1. It should be noted that the clamp voltage v_bais may be implemented by connecting the clamp input terminal 301 to a power supply or an operational amplifier, and the clamp voltage v_bais may also be adjustable.
It can be understood that if the photoelectric conversion circuit 10 detects strong light and outputs an excessive electric signal to the front-end amplifier 20, that is, inputs excessive energy to the signal amplification circuit 20, the greater the energy input to the signal amplification circuit 20, the longer the signal amplification circuit 20 needs to release the energy, that is, the longer the signal amplification circuit 20 is in a saturated state, so in the embodiment of the present application, the voltage of the electric signal output by the photoelectric conversion circuit 10 to the signal amplification circuit 20 is clamped at a required lower voltage by setting the clamping circuit 30, so as to reduce the energy output by the photoelectric conversion circuit 10 to the signal amplification circuit 20, thereby shortening the time that the signal amplification circuit 20 is in a saturated state. The specific circuit configuration of the clamp circuit 30 will be described below.
It can be understood that the clamping circuit 30 has a clamping function through the internal PN, the PN junction has a turn-on threshold at normal temperature, and the turn-on threshold of the PN junction shifts along with the temperature change of the environment where the clamping circuit 30 is located, so that the turn-on threshold of the PN junction rises or falls due to the temperature change, thereby affecting the overall performance of the light detection circuit 1.
As shown in fig. 2-3, the temperature drift compensation circuit 40 may be used to solve the problem that the voltage drop of the PN junction in the clamp circuit 30 drifts due to temperature change, where the temperature drift compensation circuit 40 has a compensation input terminal 401 and a compensation output terminal 402, the compensation input terminal 401 is used to access the temperature signal T, and the compensation output terminal 402 is connected to the clamp input terminal 301 and is used to output the compensation voltage. The compensation input 401 may be understood as a receiving port of the temperature signal T currently in the temperature drift compensation circuit 40, and the compensation output 402 may be understood as an output port of the compensation voltage. For example, the turn-on threshold of the PN junction of the clamp circuit 30 is 0.7V at normal temperature, and the actual voltage drop of the PN junction of the clamp circuit 30 becomes 0.6V due to the increase of the operating environment temperature, for example, the increase of the operating environment temperature to 30 ℃, and if the bias voltage applied to both ends of the PN junction by the clamp circuit 30 is still 0.7V, the operation of the PN junction of the clamp circuit 30 is unstable, so that the overall performance of the light detection circuit 1 is affected. The offset voltage applied to both ends of the PN junction in the clamp circuit 30 is reduced to 0.6V by the temperature drift compensation circuit 40, that is, the offset voltage is reduced by 0.7V-0.6 v=0.1V when the offset voltage is finally applied to the PN junction, so that the offset voltage is equal to the actual voltage drop of the PN junction.
For another example, in a cold season or region, since the operating environment temperature is reduced, for example, the operating environment temperature is reduced to 15 degrees celsius, the actual turn-on threshold of the PN junction of the clamp circuit 30 becomes 0.8V, at this time, the turn-on threshold of the PN junction of the clamp circuit 30 is increased (compared with 0.7V at normal temperature), and the bias voltage applied to both ends of the PN junction is still 0.7V, so that the PN junction of the clamp circuit 30 cannot be turned on, and thus the clamp function of the clamp circuit 30 cannot be realized, and the overall performance of the light detection circuit 1 is affected. The offset voltage given to the two ends of the PN junction in the clamp circuit 30 is equal to the actual voltage drop of the PN junction through the temperature drift compensation circuit 40, that is, when the offset voltage is finally applied to the PN junction, the offset voltage at the two ends of the PN junction is increased by 0.8V-0.7v=0.1v, so that the voltage at the two ends of the PN junction is converted from the original 0.7v to 0.7v+0.1v=0.8v, the actual conduction threshold of the PN junction is reached, the PN junction can be normally conducted, and the offset voltage at the two ends of the PN junction is not too high or too low compared with the actual voltage drop of the PN junction, so that the stability of the light detection circuit 1 during operation can be ensured.
Based on the photodetection circuit 1 in the embodiment of the present application, the photoelectric conversion circuit 10 is configured to convert a received optical signal into an electrical signal, and output the electrical signal to the signal amplification circuit 20 for amplification, and meanwhile, by connecting the clamping circuit 30 to the amplification input terminal 201 of the signal amplification circuit 20, the photoelectric conversion circuit 10 is prevented from inputting excessive energy to the signal amplification circuit 20, so that the signal amplification circuit 20 is in a saturated state for a long time, so that the detection time of the photodetection circuit 1 can be shortened, and it is particularly pointed out that the temperature drift compensation is performed on the actual clamping voltage of the clamping circuit 30 by the temperature drift compensation circuit 40, so that the clamping circuit 30 can have a compensation voltage corresponding to different environmental temperatures, and the bias voltage given to both ends of the PN junction in the clamping circuit 30 after the compensation voltage acts on the clamping input terminal 301 of the clamping circuit 30 is equal to the actual voltage drop of the PN junction, so that the operation of the PN junction in the clamping circuit 30 is stable, and the overall stability of the photodetection circuit 1 is further enhanced.
In particular, the specific circuit configuration of the temperature drift compensation circuit 40 may be, but is not limited to, the following several possible embodiments.
As shown in fig. 1-2, in one embodiment, the temperature drift compensation circuit 40 includes an operational amplifier U12, a first resistor R1, and a second resistor R2, wherein an inverting input terminal of the operational amplifier U12 is connected to the reference voltage v+, a first terminal of the first resistor R1 is connected to the compensation input terminal 401 of the temperature drift compensation circuit 40, a second terminal of the first resistor R1 and a non-inverting input terminal of the operational amplifier U12 are connected to the second node b2, a first terminal of the second resistor R2 is connected to the second node b2, and a second terminal of the second resistor R2 is connected to an output terminal of the operational amplifier U12 and to the compensation output terminal 402 of the temperature drift compensation circuit 40. In this design, the compensation input terminal 401 of the temperature drift compensation circuit 40 is connected to the temperature signal T, and the amplification factor of the operational amplifier U12 can be set by adjusting the resistance values of the first resistor R1 and the second resistor R2, so that the output terminal of the operational amplifier U12 can obtain the compensation voltage corresponding to the temperature signal T, and after the compensation voltage is connected to the clamping input terminal 301 of the clamping circuit 30, the clamping circuit 30 can have a compensation voltage corresponding to different temperatures, and the compensation voltage can make the bias voltage given to both ends of the PN junction in the clamping circuit 30 equal to the actual voltage drop of the PN junction, so that the PN junction in the clamping circuit 30 works stably, thereby enhancing the overall stability of the light detection circuit 1.
For example, in fig. 2, r1=500Ω, r2=130Ω, and a temperature sensor of the type TMP235A4DCKR is taken as an example, and the relation of the output voltage of the temperature sensor with the temperature change is: vt=500+10x, and v_bais=3250 mV when x=25 ℃, vt=750 mV.
From the above, the following relation can be obtained according to the principles of "virtual short" and "virtual broken":
v3=v+,. The relational expression (1)
(VT-v+)/r1= (v3—v_bais)/r2..
And (3) according to the relation (1) and the relation (2):
V_BAIS＝((R1+R2)/R1)*(V+)-(R2/R1)*VT......(3)
when "x=25 ℃, vt=500+10x=500+10x25=750 mV," v_bais=3250 mV "is brought into relation (3), v_bais and VT can be reversely deduced to satisfy relation (4):
v_bais=3455-0.26 VT
Wherein VT is the output voltage of the temperature sensor; x is the temperature (namely, the output voltage of the temperature sensor is increased by 10mV when the temperature is increased by 1 ℃); v3 is the voltage at the non-inverting input of the op-amp; v+ is a reference voltage; V-BAIS is the clamp voltage; r1 is the resistance value of the first resistor; r2 is the resistance of the second resistor.
As shown in fig. 3, in another embodiment, the temperature drift compensation circuit 40 includes a controller having a compensation input 401 and a compensation output 402 of the temperature drift compensation circuit 40, and the controller is pre-stored with a corresponding relationship between the temperature signal T and the compensation voltage, for example, the controller is integrated with a memory unit, and the memory unit is pre-stored with a corresponding relationship between the temperature signal T and the compensation voltage. In this design, after the controller receives the temperature signal T, the controller obtains a corresponding compensation voltage according to the received temperature signal T and a corresponding relation between the pre-stored temperature signal T and the compensation voltage, and outputs the compensation voltage to the clamp input terminal 301 of the clamp circuit 30 via the compensation output terminal 402 of the controller, so that the bias voltage given to two ends of the PN junction in the clamp circuit 30 is equal to the actual voltage drop of the PN junction, so that the clamp circuit 30 has a compensation voltage corresponding to the PN junction in the clamp circuit 30 at different temperatures, and the compensation voltage stabilizes the operation of the PN junction in the clamp circuit 30, thereby enhancing the overall stability of the light detection circuit 1. It will be appreciated that there is a one-to-one correspondence of the temperature signal T to the compensation voltage, e.g. the compensation voltage may decrease with increasing temperature signal T.
The clamping circuit 30 performs voltage clamping by the principle of unidirectional conduction of the PN junction to reduce the voltage signal or energy input to the front-end amplifier 20, and the specific circuit configuration of the clamping circuit 30 may be, but is not limited to, the following several possible embodiments.
In a first embodiment, the clamping circuit 30 comprises a diode (not shown in the figure) with its cathode connected to the clamping output terminal 302 and its anode connected to the clamping input terminal 301. In this design, the compensation voltage outputted from the compensation output terminal 402 of the temperature drift compensation circuit 40 acts on the anode of the diode, so that the bias voltage at two ends of the PN junction of the diode is equal to the actual voltage drop of the PN junction, so that the diode has a compensation voltage at different temperatures, and the compensation voltage stabilizes the operation of the PN junction in the diode, thereby enhancing the overall stability of the light detection circuit 1.
As shown in fig. 2, in the second embodiment, the clamp circuit 30 includes a transistor Z2, and the transistor Z2 is taken as an NPN transistor for example, where a base and a collector of the transistor Z2 are connected to the clamp input terminal 301, and an emitter of the transistor Z2 is connected to the clamp output terminal 302. In this design, the compensation voltage outputted from the compensation output terminal 402 of the temperature drift compensation circuit 40 acts on the base of the triode Z2, so that the bias voltage at two ends of the PN junction between the base and the emitter of the triode Z2 is equal to the actual voltage drop of the PN junction, so that the triode Z2 has a compensation voltage at different temperatures, and the compensation voltage stabilizes the PN junction in the triode Z2, thereby enhancing the overall stability of the light detection circuit 1. Of course, the transistor Z2 may be a PNP transistor, in which case the base and emitter of the transistor Z2 are connected to the clamp input terminal 301, and the collector of the transistor Z2 is connected to the clamp output terminal 302.
It is understood that the transistor Z2 is further connected to a voltage for conducting the transistor Z2, which may be defined as a conducting voltage, the conducting voltage is input to the clamp input terminal 301 to act on the base electrode of the transistor Z2, and then the transistor Z2 is conducted, so as to avoid burning out the transistor Z2 by the conducting voltage and the corresponding current, and further design, the clamp circuit 30 further includes a third resistor R3, a fourth resistor R4, and a first capacitor C1, wherein the third resistor R3 is connected in series between the clamp input terminal 301 and the base electrode of the transistor Z2, the fourth resistor R4 is connected in series between the collector electrode of the transistor Z2, the first plate of the first capacitor C1 is connected to the clamp input terminal 301, and the second plate of the first capacitor C1 is grounded. In the design, the third resistor R3 is designed to have a current limiting function on the current flowing into the base electrode of the triode Z2, so that the triode Z2 is well protected; by designing the fourth resistor R4, the current flowing into the collector electrode of the triode Z2 can be limited, so that the triode Z2 is well protected; by designing the first capacitor C1, the on-voltage and the compensation voltage input into the clamp circuit 30 can be filtered, so as to ensure the stability of the clamp circuit 30 in operation.
For example, when the transistor Z2 is a Si tube, at normal temperature, the conduction threshold of the PN junction between the base of the transistor Z2 and the emitter of the transistor Z2 is 0.7V, but when the temperature of the environment where the transistor Z2 is located increases by a certain value, for example 30 ℃, the actual conduction threshold of the PN junction between the base of the transistor Z2 and the emitter of the transistor Z2, that is, the actual voltage drop, is 0.6V, and if the bias voltage applied to both ends of the PN junction between the base of the transistor Z2 and the emitter of the transistor Z2 is still 0.7V, the operation of the PN junction of the transistor Z2 is unstable, which affects the overall performance of the light detection circuit 1. The offset voltage is input to the triode Z2 through the temperature drift compensation circuit 40, so that the offset voltage of the two ends of the PN junction between the base electrode and the emitter electrode of the triode Z2 is reduced to 0.6V, and the offset voltage is equal to the actual voltage drop of the PN junction by 0.6V.
As shown in fig. 4, in the third embodiment, the clamp circuit 30 includes a fet Q1, and the fet Q1 is exemplified as a PMOS transistor, where the gate and the drain of the fet Q1 are connected to the clamp input terminal 301, and the source of the fet Q1 is connected to the clamp output terminal 302. In this design, the compensation voltage outputted by the compensation output end 402 of the temperature drift compensation circuit 40 acts on the gate of the field effect transistor Q1, so that the bias voltage at two ends of the PN junction between the gate and the source of the field effect transistor Q1 is equal to the actual voltage drop of the PN junction, so that the field effect transistor Q1 has a compensation voltage at different temperatures, and the compensation voltage makes the PN junction between the gate and the source of the field effect transistor Q1 work stably, thereby enhancing the overall stability of the light detection circuit 1.
It should be noted that, when the clamp circuit 30 includes the diode or the fet Q1, in order to avoid the diode or the fet Q1 from being damaged due to the excessive turn-on voltage or current of the diode or the fet Q1, a current limiting resistor may be connected in series between the anode of the diode and the clamp input terminal 301, and a filter capacitor may be connected in series between the ground and the clamp input terminal 301; alternatively, a current limiting resistor is connected in series between the gate of the field effect transistor Q1 and the clamp input terminal 301, another current limiting resistor is connected in series between the drain of the field effect transistor Q1 and the clamp input terminal 301, and a filter capacitor is connected in series between ground and the clamp input terminal 301. Of course, the fet Q1 may be an NMOS transistor, in which case the gate and source of the fet Q1 are connected to the clamp input terminal 301, and the drain of the fet Q1 is connected to the clamp output terminal 302.
As shown in fig. 2, considering that the photoelectric conversion circuit 10 is configured to convert an optical signal reflected by a target object into an electrical signal, in order to enable the photoelectric conversion circuit 10 to have a function of converting an optical signal, the photoelectric conversion circuit 10 further includes a photodiode Z1, a fifth resistor R5, and a second capacitor C2, wherein a cathode of the photodiode Z1 is connected to the signal output terminal 102, a first end of the fifth resistor R5 is connected to the voltage bias terminal 101, a second end of the fifth resistor R5 and an anode of the photodiode Z1 are connected to the third node b3, a first plate of the second capacitor C2 is connected to the third node b3, and a second plate of the second capacitor C2 is grounded. The photodiode Z1 may be an avalanche photodiode APD or another type of photodiode. In the design, when the photodiode Z1 is an avalanche photodiode APD, the anode of the photodiode Z1 is connected to the voltage bias terminal 101, and a reverse bias voltage is applied to the photodiode Z1 through the voltage bias terminal 101, so that the photodiode Z1 is reversely broken down in a negative bias mode, and at this time, the photodiode Z1 can not only convert an optical signal reflected by a target object into a photocurrent signal, but also amplify the photocurrent signal, and the gain amplification factor is about 100; by designing the fifth resistor R5, the fifth resistor R5 plays a role of current limiting to protect the photodiode Z1; by designing the second capacitor C2, the second capacitor C2 functions as a filter for the electric signal in the photoelectric conversion circuit 10.
As shown in fig. 2, considering that the front-end amplifier 20 can amplify the electric signal output by the signal output end 102 to form a larger electric signal, in order to make the front-end amplifier 20 have the amplifying function of the related electric signal, further design, the front-end amplifier 20 includes an amplifier U11 and a sixth resistor R6, where the amplifier U11 is a transimpedance amplifier or a low noise amplifier, the non-inverting input of the amplifier U11 is connected to the amplifying input 201, the inverting input of the amplifier U11 is grounded, the first end of the sixth resistor R6 is connected to the output of the amplifier U11, and the second end of the sixth resistor R6 is grounded. In this design, the transimpedance amplifier TIA is designed for the amplifier U11, and thus the transimpedance amplifier TIA can amplify the current signal output from the signal output terminal 102 into a larger voltage signal for output, and at this time, the signal output from the transimpedance amplifier TIA to the subsequent circuit of the photovoltaic system is the voltage signal, and the transimpedance amplifier TIA has a larger amplification factor, so that the current signal output from the photovoltaic conversion circuit 10 can be amplified into a larger voltage signal. Similarly, by designing the amplifier U11 as a low-noise amplifier, the electric signal output via the signal output terminal 102 can be converted into a larger electric signal, and the low-noise amplifier can amplify the effective signal of the electric signal without amplifying the noise portion of the electric signal, so that the influence of the noise signal on the amplified electric signal can be effectively reduced. By designing the sixth resistor R6, the sixth resistor R6 performs a current limiting function on the larger electrical signal output from the output terminal of the amplifier U11, thereby ensuring the stability of the circuit structure of the front-end amplifier 20.
Referring to fig. 5, a second aspect of the present application proposes an optoelectronic system, which includes a controller 2, an optical signal transmitting circuit and an optical signal receiving circuit, wherein the optical signal transmitting circuit is electrically connected to the controller 2, the optical signal receiving circuit includes an analog-to-digital converter 3, an amplifying circuit 4 and the above-mentioned optical detection circuit 1, and the controller 2, the analog-to-digital converter 3, the amplifying circuit 4 and the amplifying output end 202 are sequentially connected. The photoelectric system can be a laser photoelectric system or an infrared photoelectric system. In this design, the photoelectric system with the above-mentioned light detection circuit 1, the compensation voltage acts on the clamping input terminal 301 of the clamping circuit 30, so that the bias voltage given to the two ends of the PN junction in the clamping circuit 30 is equal to the actual voltage drop of the PN junction, thereby making the PN junction in the clamping circuit 30 work stably, and further enhancing the overall stability of the photoelectric system.
Specifically, as shown in fig. 5, the controller 2 includes a transmission control terminal 21 and a reception control terminal 22, and the optical signal transmission circuit includes a driving chip 5 and an optical transmitter 6. The light emitter 6 may be, for example, a gallium nitride laser emitter or an infrared emitter, where the controller 2 controls the driving chip 5 to work through the emission control end 21, the driving chip controls the light emitter 6 to emit corresponding laser or infrared light, and the laser or infrared light is received by the photoelectric conversion circuit 10 after being reflected by the target object, amplified by the front-end amplifier 20 and output to the amplifying circuit 4, and the analog-to-digital converter 4 is used for converting an analog signal output by the amplifying circuit 4 into a digital signal and sending the digital signal to the receiving control end 22 of the controller 2, so as to implement a light detection function; further, the controller 2 is connected to the photoelectric conversion circuit 10 via a reverse bias power supply adjusting circuit 7 to adjust the bias voltage HV input to the photoelectric conversion circuit 10.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present application, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, this is for convenience of description and simplification of the description, but does not indicate or imply that the apparatus or element to be referred must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely used for illustration and are not to be construed as limitations of the present patent, and that the specific meaning of the terms described above may be understood by those of ordinary skill in the art according to the specific circumstances.
The foregoing description of the preferred embodiments of the present application is not intended to be limiting, but is intended to cover any and all modifications, equivalents, and alternatives falling within the spirit and principles of the present application.
Claims (8)
1. A light detection circuit, the light detection circuit comprising:
the photoelectric conversion circuit is provided with a voltage bias end for accessing bias voltage and a signal output end;
the front-end amplifier is provided with an amplifying input end and an amplifying output end, and the amplifying input end and the signal output end are connected to a first node;
the clamping circuit is provided with a clamping input end and a clamping output end, wherein the clamping input end is used for accessing clamping voltage, and the clamping output end is connected to the first node; the clamping circuit has a clamping function through internal PN (PN) fixation;
the temperature drift compensation circuit is provided with a compensation input end and a compensation output end, wherein the compensation input end is used for accessing a temperature signal, the compensation output end is connected with the clamping input end and is used for outputting a compensation voltage, and the compensation voltage enables the bias voltage given to the two ends of the PN junction in the clamping circuit to be equal to the actual voltage drop of the PN junction; the method comprises the following steps: the temperature drift compensation circuit comprises an operational amplifier, a first resistor and a second resistor; the inverting input end of the operational amplifier is connected with a reference voltage; the first end of the first resistor is connected to the compensation input end, and the second end of the first resistor and the non-inverting input end of the operational amplifier are connected to a second node; the first end of the second resistor is connected with the second node, and the second end of the second resistor is connected to the output end of the operational amplifier and the compensation output end; the temperature drift compensation circuit satisfies the following conditions: v_bais= ((r1+r2)/R1) ×v+) - (R2/R1) ×vt; wherein VT is the output voltage of the temperature sensor; v+ is a reference voltage; V-BAIS is the clamp voltage; r1 is the resistance value of the first resistor; r2 is the resistance value of the second resistor.
2. The light detection circuit of claim 1, wherein the clamp circuit comprises:
and the cathode of the diode is connected to the clamping output end, and the anode of the diode is connected to the clamping input end.
3. The light detection circuit of claim 1, wherein the clamp circuit comprises:
and the base electrode and the collector electrode of the triode are connected to the clamping input end, and the emitting electrode of the triode is connected to the clamping output end.
4. The light detection circuit of claim 3, wherein the clamp circuit further comprises:
the third resistor is connected in series between the clamping input end and the base electrode of the triode;
the fourth resistor is connected in series between the clamping input end and the collector electrode of the triode;
and the first polar plate of the first capacitor is connected to the clamping input end, and the second polar plate of the first capacitor is grounded.
5. The light detection circuit of claim 1, wherein the clamp circuit comprises:
the grid electrode and the drain electrode of the field effect tube are connected to the clamping input end, and the source electrode of the field effect tube is connected to the clamping output end.
6. The light detection circuit of claim 1, wherein the photoelectric conversion circuit comprises:
a photodiode, a cathode of which is connected to the signal output terminal;
a fifth resistor, a first end of which is connected to the voltage bias end, and a second end of which and an anode of the photodiode are connected to a third node;
and the first polar plate of the second capacitor is connected to the third node, and the second polar plate of the second capacitor is grounded.
7. The light detection circuit of any one of claims 1-6, wherein the front-end amplifier comprises:
the amplifier is a transimpedance amplifier or a low-noise amplifier, the non-inverting input end of the amplifier is connected to the amplifying input end, and the inverting input end of the amplifier is grounded;
and the first end of the sixth resistor is connected to the output end of the amplifier, and the second end of the sixth resistor is grounded.
8. An optoelectronic system, comprising:
a controller;
the optical signal transmitting circuit is electrically connected with the controller;
an optical signal receiving circuit comprising an analog-to-digital converter, an amplifying circuit and an optical detection circuit according to any one of claims 1 to 7, wherein the controller, the analog-to-digital converter, the amplifying circuit and the amplifying output end of the front-end amplifier are sequentially connected.
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| CN202111456113.9A CN115824274B (en) | 2021-12-01 | 2021-12-01 | Light detection circuit and photoelectric system |
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