CN115810646A - Silicon-based wide-spectrum detector array and preparation method thereof - Google Patents
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Abstract
The invention discloses a silicon-based wide-spectrum detector array and a preparation method thereof, wherein the silicon-based wide-spectrum detector array is composed of a plurality of detector unit arrays, each detector unit comprises an SOI (silicon on insulator) substrate, a silicon dioxide window layer, a long-wave absorption layer, an n electrode and a p electrode, the SOI substrate comprises a bottom Si material layer, a silicon dioxide filling layer and top silicon, and the top silicon comprises an n-type heavily doped region, an n-type middle doped region and an intrinsic region. The invention adopts partial doping and shallow doping of the surface of the active region of the light receiving surface and reserves partial intrinsic region, thereby having no dead zone effect of short wave detection in the intrinsic non-injection region, effectively improving the response of the spectrum detector to optical signals with shorter wavelength and realizing the broad spectrum detection of 300nm-2000 nm.
Description
Technical Field
The invention relates to a detector array and a preparation method thereof, in particular to a silicon-based wide-spectrum detector array and a preparation method thereof, belonging to the technical field of photoelectrons.
Background
The wide-spectrum multicolor imaging and detection has wide application prospects in the aspects of high-quality portrait photography, agriculture, military affairs, environmental monitoring, geological exploration, ocean remote sensing, atmospheric remote sensing, biomedicine and the like, and becomes a research hotspot in the field of recent photoelectrons. Generally, one semiconductor material can only detect the response of light in a specific wavelength range, and in order to realize the detection of a wide spectrum, different semiconductor materials must be integrated to expand the light response range. Modern photodetectors commonly use direct bandgap group III-V semiconductor materials such as InGaAs, inSb, inAs, and the like. High-efficiency broad spectrum detection can be realized through heteroepitaxial integration of III-V materials with different band gap widths. And the array of the wide-spectrum detector is integrated with a read-out circuit of the silicon microelectronic detector, so that wide-spectrum imaging can be realized, and the application range of the wide-spectrum detector is greatly enlarged. Unfortunately, although the direct bandgap III-V materials have good probing efficiency, they are relatively expensive, have poor thermal and mechanical properties, and most importantly, are not compatible with silicon microelectronic chip implementation processes, which greatly limits the applications.
Since the forbidden band width of silicon is 1.12eV, optical signals with a wavelength of more than 1100nm cannot be effectively absorbed. In addition, although silicon can absorb short wavelength optical signals (< 400 nm), its penetration depth in silicon is very limited, and thus, silicon detectors are generally only effective for detecting optical signals from 400nm to 1100 nm. The germanium material which is the IV group element has higher response in the near infrared wave band, and the germanium detector can effectively detect optical signals of 800nm-1700 nm. By adopting the germanium-tin alloy detector, the optical signal of 800nm-2000nm can be effectively detected. And the germanium-tin alloy can realize epitaxial growth on the silicon, can be completely compatible with the existing silicon CMOS process, and can effectively reduce the cost. Therefore, through reasonable integration of silicon, germanium and germanium-tin alloy, the optical detection capability of different wave bands of the material is fully utilized, the response wavelength of the silicon-based detector can be widened to 400nm-2000nm, and wide spectrum detection is realized.
Therefore, if the dead zone effect caused by surface doping can be reduced, the corresponding wavelength range of the silicon-based detector can be further widened. However, in the conventional longitudinal PIN structure, the most surface of the active region of the detector is provided with a heavily doped layer or a medium doped layer, and for optical signals with shorter wavelength or even ultraviolet band (< 400 nm), the material absorbs photo-generated carriers generated by the optical signals and gathers in the surface doped region, so that the photo-generated carriers are difficult to extract, and the spectral response of the detector on short wave is lost.
Disclosure of Invention
The invention aims to provide a silicon-based broad spectrum detector array and a preparation method thereof, which can improve the response of a spectrum detector to optical signals with shorter wavelength and realize the broad spectrum detection of 300nm-2000 nm.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a silicon-based broad spectrum detector array, comprising: the detector comprises a plurality of detector unit arrays, each detector unit comprises an SOI substrate, a silicon dioxide window layer, a long wave absorption layer, an n electrode and a p electrode, the SOI substrate comprises a bottom Si material layer, a silicon dioxide buried layer and top silicon, the silicon dioxide buried layer is manufactured on the upper side of the bottom Si material layer, the top silicon is manufactured on the upper side of the silicon dioxide buried layer, the bottom Si material layer partially covers the lower side face of the silicon dioxide buried layer, the top silicon comprises an n-type heavily doped region, an n-type middle doped region and an intrinsic region, the n-type heavily doped region completely replaces the top silicon within the depth range, the n-type middle doped region and the intrinsic region are arranged in a hollow region between the n-type heavily doped regions, the intrinsic region is located on the upper side of the n-type middle doped region, the shape of the silicon dioxide window layer is matched with the n-type heavily doped region and correspondingly manufactured on the upper side of the n-type heavily doped region, the outer edge of the lower side of the long wave absorption layer is grown in the silicon dioxide window layer and completely covers the upper side of the n-type middle doped region and the intrinsic region, the n electrode is manufactured on the top of the long wave absorption layer.
Furthermore, the n-type heavily doped regions are distributed on the outer side edges of the single detector units in a rectangular mode, the n-type middle doped regions are distributed in the hollow regions on the inner sides of the n-type heavily doped regions in a geometric mode, the lower sides of the n-type middle doped regions are located on the upper sides of the silicon dioxide buried layers, the n-type middle doped regions partially replace top silicon in the depth range, and all the inner portions of the hollow regions on the inner sides of the n-type heavily doped regions except the n-type middle doped regions are intrinsic regions.
Furthermore, a p-type doped region is arranged at the top of the long wave absorption layer, and a p electrode is manufactured on the p-type doped region.
Furthermore, the device also comprises an insulating medium layer which is arranged at the outer sides of the silicon dioxide window layer and the long wave absorption layer.
Further, the bottom Si material layer and the long wave absorption layer are staggered with each other.
Furthermore, the long wave absorption layer is made of pure germanium, germanium-tin alloy or germanium-silicon alloy.
A preparation method of a silicon-based wide-spectrum detector array is characterized by comprising the following steps:
s1, respectively manufacturing an n-type heavily doped region and an n-type middle doped region on top-layer silicon, wherein the regions which are not doped are intrinsic regions;
s2, depositing silicon dioxide on the surface of the top silicon layer to manufacture a silicon dioxide window layer, wherein windows are formed in the silicon dioxide window layer corresponding to the upper regions of the n-type middle doped region and the intrinsic region;
s3, selecting an epitaxial growth long-wave absorption layer on the top silicon exposed in the window of the silicon dioxide window layer;
s4, manufacturing a p-type doped region at the top of the long-wave absorption layer;
s5, depositing an insulating medium layer on the long wave absorption layer and the silicon dioxide window layer;
s6, manufacturing an n electrode shared by all detector units on the top silicon corresponding to the n-type heavily doped region, wherein the n electrode is electrically connected with the n-type heavily doped region;
s7, manufacturing an independent p electrode on the p-type doped region of each detector unit, wherein the p electrode is electrically connected with the p-type doped region;
s8, forming ohmic contact by annealing;
s9, thinning the bottom Si material layer, and removing the corresponding Si material layer below the long wave absorption layer to finish the preparation.
Further, in the step S1, the thickness of the top silicon is greater than 200nm, the thickness of the silicon dioxide buried layer is greater than 300nm, and the crystal orientation of the top silicon 110 is<001>In the direction, the conduction type of the top layer silicon is p type, the resistivity is 10 ohm/cm, the injection depth of the n type heavily doped region is 0-340 nm, and the doping concentration is more than 1 multiplied by 10 19 cm -3 The ion implantation depth of the n-type middle doped region is 200-340 nm, and the doping concentration is greater than 1 × 10 18 cm -3 The conditions for high-temperature annealing activation are>800 ℃/10min。
Further, in the step S2, silicon dioxide is deposited on the surface of the top silicon layer by using an ion-enhanced chemical vapor deposition system or a thermal oxidation method, and a window is opened on the silicon dioxide on the upper side of the n-type middle doped region and the intrinsic region by using a photoresist as a mask and an etching manner combining a dry method and a wet method.
Further, in the step S3, a long-wave absorption layer is epitaxially grown in the window of the silicon dioxide window layer by using an ultrahigh vacuum chemical vapor deposition system.
Further, in the step S8, the annealing temperature is 150 to 750 ℃.
Further, in the step S9, a mechanical grinding process is adopted to thin the bottom Si material layer, and then the photoresist is used as a mask and a dry etching method is adopted to remove the corresponding Si material layer below the long-wave absorption layer, thereby completing the preparation.
Compared with the prior art, the invention has the following advantages and effects: the silicon-based broad spectrum detector array adopts partial doping and shallow doping of the surface of the illuminated surface active region and partial intrinsic region, so that no dead zone effect of short wave detection exists in the intrinsic non-injection region, the response of the spectrum detector to optical signals with shorter wavelength can be effectively improved, and the broad spectrum detection of 300nm-2000nm is realized.
Drawings
FIG. 1 is a schematic diagram of a silicon-based broad spectrum detector array of the present invention.
Fig. 2 is a top view of several forms of the top silicon of the present invention.
FIG. 3 is a flow chart of a method of fabricating a silicon-based broad spectrum detector array of the present invention.
Detailed Description
To elaborate on technical solutions adopted by the present invention to achieve predetermined technical objects, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, it is obvious that the described embodiments are only partial embodiments of the present invention, not all embodiments, and technical means or technical features in the embodiments of the present invention may be replaced without creative efforts, and the present invention will be described in detail below with reference to the drawings and in conjunction with the embodiments.
As shown in FIG. 1, the silicon-based wide-spectrum detector array of the invention is composed of a plurality of detector unit arrays, each detector unit comprises an SOI substrate 1, a silicon dioxide window layer 2, a long wave absorption layer 3, an n electrode 4 and a p electrode 5, the SOI substrate 1 comprises a bottom Si material layer 11, a silicon dioxide filling layer 12 and a top silicon layer 13, the silicon dioxide filling layer 12 is manufactured on the upper side of the bottom Si material layer 11, and the top silicon layer 13 is manufactured on the upper side of the silicon dioxide filling layer 12. The bottom Si material layer 11 partially covers the lower side surface of the silicon dioxide buried layer 12, the top silicon 13 comprises an n-type heavily doped region 14, an n-type middle doped region 15 and an intrinsic region 16, the n-type heavily doped region 14 completely replaces the top silicon 13 in the depth range and is used for isolating adjacent detectors, crosstalk caused by transition of photogenerated carriers between the adjacent detectors is prevented, and imaging definition is improved. The n-type middle doped region 15 and the intrinsic region 16 are arranged in a hollow region between the n-type heavily doped regions 14, the intrinsic region 16 is positioned on the upper side of the n-type middle doped region 15, the shape of the silicon dioxide window layer 2 is matched with that of the n-type heavily doped region 14 and is correspondingly manufactured on the upper side of the n-type heavily doped region 14, and in order to avoid the influence of the silicon dioxide window layer 2 on the n-type middle doped region, the width of the silicon dioxide window layer 2 is smaller than that of the n-type heavily doped region 14 so as to partially cover the n-type heavily doped region 14. The preparation method of the silicon dioxide window layer 2 can be realized by thermal oxidation of the top layer silicon 13, sputtering growth or chemical vapor deposition. The epitaxial window for forming the silicon dioxide window layer 2 can be formed by means of HF etching or dry etching. By adopting HF corrosion, the surface roughness and defects caused by dry etching can be avoided, thereby improving the quality of the subsequent epitaxial long-wave absorption layer 3. The shape of the exposed top layer silicon 13 in the etched silicon dioxide window layer 2 determines the location and area of the subsequent epitaxial long wavelength absorption layer 3. The shape of the silicon dioxide window layer 2 is preferably square or rectangular, and the detection area duty ratio of the detector array can be effectively improved.
The outer edge of the lower side of the long-wave absorption layer 3 grows in the silicon dioxide window layer 2 and completely covers the upper sides of the n-type middle doped region 15 and the intrinsic region 16, the n electrode 4 is manufactured on the n-type middle doped region 15 and forms good ohmic contact with the n-type heavily doped region 15, and the p electrode 5 is manufactured on the top of the long-wave absorption layer 3 and forms good ohmic contact with the p-type doped region 6.
Optical signals are incident from the direction of the silicon dioxide filling layer 12 and firstly pass through the top layer silicon 13, the optical signals which cannot be absorbed or cannot be completely absorbed by the top layer silicon 13 can enter the long wave absorption layer 3 to be absorbed, the optical signals which are incompletely absorbed at the moment can be reflected by the p electrode 5 at the top of the germanium detector and enter the detector again to be secondarily absorbed, and therefore the responsivity is improved. Generally, a silicon detector can only effectively detect optical signals of 400nm-1100nm, a germanium detector can effectively detect optical signals of 800nm-1700nm, and a germanium tin detector can increase the effective detection wavelength to 2000nm and above.
As shown in fig. 2, the n-type heavily doped region 14 is distributed in a rectangular shape at the outer edge of a single detector unit, and on the whole detector array, the n-type heavily doped region 14 is in a rectangular grid shape and is divided into square cells, and one detector unit is located in each cell. The n-type middle doped region 15 is distributed in the hollow region inside the n-type heavily doped region 14 in a geometric shape, and fig. 2 lists the geometric shapes of several n-type middle doped regions 15. The lower side of the n-type middle doped region 15 is positioned on the upper side of the silicon dioxide buried layer 12, and the n-type middle doped region 15 partially replaces the top layer silicon 13 in the depth range, so that the depth of the n-type middle doped region is reduced, and the influence of the n-type middle doped region on the extraction of photo-generated carriers is reduced. The inside of the hollow region inside the heavily n-doped region 14 except the middle n-doped region 15 is an intrinsic region 16.
The top of the long wave absorption layer 3 is provided with a p-type doped region 6, and a p electrode 5 is manufactured on the p-type doped region 6. The p-type doped region is activated by annealing after injecting boron and gallium ions in an ion injection manner, and the doping concentration of the p-type doped region is more than 5 multiplied by 10 18 /cm 3 。
The silicon-based wide-spectrum detector array further comprises an insulating medium layer 7, wherein the insulating medium layer 7 is arranged on the outer sides of the silicon dioxide window layer 2, the long-wave absorption layer 3 and the p-type doped region 6 and used for achieving electrical isolation of the silicon-based wide-spectrum detector array from the external environment. A via hole is left on the upper side of the p-type doped region 6 for the p-electrode 5 to pass through.
The bottom Si material layer 11 and the long-wave absorbing layer 3 are offset from each other. Since the bottom Si material layer 11 can also absorb a part of the optical signal, the bottom Si material layer 11 under the long-wave absorption layer 3 of the detector array is removed, and the influence of the silicon substrate on the optical response of the detector can be eliminated. The long wave absorption layer 3 is made of pure germanium, germanium-tin alloy or germanium-silicon alloy.
The n-type middle doped region 15 and the n-type heavily doped region 14 can be formed by ion implantation or impurity diffusion. Preferably, in this embodiment, the heavily n-doped region 14 and the middle n-doped region 15 are annealed and activated after implanting phosphorus or arsenic ions by ion implantation, wherein the doping concentration of the middle n-doped region is greater than 1 × 10 17 /cm 3 The doping concentration of the n-type heavily doped region is more than 5 multiplied by 10 because of the need of realizing excellent ohmic contact 18 /cm 3 。
As shown in fig. 3, a method for manufacturing a silicon-based broad spectrum detector array includes the following steps:
s1, an n-type heavily doped region 14 and an n-type middle doped region 15 are respectively manufactured on top layer silicon 13 by using photoresist as a mask and adopting an ion implantation mode, and an undoped region is an intrinsic region 16. The thickness of the top silicon 13 is greater than 200nm and the thickness of the silicon dioxide buried layer 12 is greater than 300nm. In this embodiment, the thickness of the silicon dioxide buried layer 12 is 2 μm, the thickness of the top silicon 13 is 340nm, and the crystal orientation of the top silicon 13 is<001>And the direction of the conductive type is p type, and the resistivity is 10 ohm/cm. The implantation depth of the n-type heavily doped region 14 is 0-340 nm, and the doping concentration is more than 1 × 10 19 cm -3 The ion implantation depth of the n-type middle doped region 15 is 200-340 nm, and the doping concentration is larger than 1 x 10 18 cm -3 The conditions for high-temperature annealing activation are>800 ℃/10min。
S2, depositing silicon dioxide on the surface of the top layer silicon 13 by adopting a plasma enhanced chemical vapor deposition system (PECVD) or a thermal oxidation method, and manufacturing a silicon dioxide window layer 2 on the silicon dioxide on a part of the n-type heavily doped region 14, the n-type middle doped region 15 and the intrinsic region 16 by adopting an etching mode of combining photoresist as a mask and a dry wet method for preparing the long-wave absorption layer 3. In the embodiment, the thickness of the silicon dioxide is 200nm, and the detector unit is square, so that the shape of the silicon dioxide corrosion window is square and occupies more than 75% of the area of a single detector.
S3, after cleaning, placing the silicon substrate into an ultrahigh vacuum chemical vapor deposition system (UHV-CVD), and epitaxially growing a long-wave absorbing layer 3 on top of top silicon 13 in an epitaxial window of the silicon dioxide window layer 2, wherein the long-wave absorbing layer 3 is made of pure germanium, germanium-tin alloy or germanium-silicon alloy, and the thickness of the long-wave absorbing layer 3 is at least more than 200nm. In this embodiment, the long-wave absorption layer 3 is made of pure germanium. In order to improve the responsivity of the detector at 1100-1700nm, the thickness of the long-wave absorption layer is 800nm, and the responsivity of more than 0.6A/W can be obtained at the wavelength of 1550 nm.
And S4, manufacturing a p-type doped region 6 on the top of the long-wave absorption layer 3 by using photoresist as a mask and adopting an ion implantation mode. In this embodiment, the implanted ions in the p-type doped region 6 are boron, the implantation depth is 0-100 nm, and the doping concentration is greater than 1 × 10 19 cm -3 . The conditions for rapid annealing activation are>400 ℃/1min。
And S5, depositing an insulating medium layer 7 on the long wave absorption layer 3 and the silicon dioxide window layer 2 to realize the electrical isolation between the long wave absorption layer and the external environment. In this example, PECVD was used to deposit silicon dioxide 400nm.
S6, manufacturing an n electrode 4 shared by all detector units on the top silicon 13 corresponding to the n-type heavily doped region 14, and electrically connecting the n electrode with the n-type heavily doped region 14.
And S7, manufacturing a p electrode 5 independently arranged on each detector unit on the p-type doped region 7, and forming electrical connection with the p-type doped region 7.
And S8, annealing to form ohmic contact. The annealing temperature in this embodiment is 150-750 ℃, and ohmic contact between the n-electrode 4 and the n-type heavily doped region 14 and ohmic contact between the p-electrode 5 and the p-type doped region 7 are achieved.
S9, thinning the bottom Si material layer 11 by adopting a mechanical grinding process, and then removing the bottom Si material layer 11 corresponding to the lower part of the long-wave absorption layer 3 by adopting photoresist as a mask and a dry etching mode to finish the preparation. In this embodiment, the bottom Si material layer 11 is thinned to 150 μm, and then the corresponding bottom Si material layer 11 is completely removed by backside lithography and dry etching.
The invention provides a silicon-based wide-spectrum detector array and a preparation method thereof. Partial doping and shallow doping of the surface of the active region of the light receiving surface are adopted, and partial intrinsic regions are reserved. Therefore, in the intrinsic non-injection region, the dead zone effect of short-wave detection is avoided, and the response of the detector to optical signals with shorter wavelengths can be effectively improved, so that the wide-spectrum detection of 300nm-2000nm is realized. In addition, the silicon is used as the substrate, and the silicon can provide a good integration foundation and an optimization space for the array of a silicon-based wide spectrum detector in the future by utilizing the strong electric signal processing capability of the silicon in the field of microelectronics, and has wide application prospect in the fields of silicon-based wide spectrum optical processing and optical imaging.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
1. A silicon-based wide-spectrum detector array, comprising: the long-wave absorption type detector comprises a plurality of detector unit arrays, each detector unit comprises an SOI substrate, a silicon dioxide window layer, a long-wave absorption layer, an n electrode and a p electrode, the SOI substrate comprises a bottom Si material layer, a silicon dioxide filling layer and top silicon, the silicon dioxide filling layer is manufactured on the upper side of the bottom Si material layer, the top silicon is manufactured on the upper side of the silicon dioxide filling layer, the bottom Si material layer partially covers the lower side face of the silicon dioxide filling layer, the top silicon comprises an n-type heavily doped region, an n-type middle doped region and an intrinsic region, the n-type heavily doped region completely replaces the top silicon in the depth range, the n-type middle doped region and the intrinsic region are arranged in a hollow region between the n-type heavily doped regions, the intrinsic region is located on the upper side of the n-type middle doped region, the shape of the silicon dioxide window layer is matched with the n-type heavily doped region and correspondingly manufactured on the upper side of the n-type heavily doped region, the outer edge of the lower side of the long-wave absorption layer is grown in the silicon dioxide window layer and completely covers the upper side of the n-type middle doped region and the intrinsic region, the n-type heavily doped region, the n electrode is manufactured on the n-type middle doped region, the n electrode, and the p electrode is manufactured on the top of the long-wave absorption layer.
2. A silicon-based broad spectrum detector array according to claim 1, wherein: the n-type heavily doped regions are distributed on the outer side edges of the single detector units in a rectangular mode, the n-type middle doped regions are distributed in hollow regions on the inner sides of the n-type heavily doped regions in a geometric mode, the lower sides of the n-type middle doped regions are located on the upper sides of the silicon dioxide buried layers, the n-type middle doped regions partially replace top layer silicon in the depth range, and all the inner hollow regions of the inner sides of the n-type heavily doped regions except the n-type middle doped regions are intrinsic regions.
3. A silicon-based broad spectrum detector array according to claim 1, wherein: the top of the long wave absorption layer is provided with a p-type doped region, and the p electrode is manufactured on the p-type doped region.
4. A silicon-based broad spectrum detector array according to claim 1, wherein: the long-wave absorption layer is arranged on the outer side of the silicon dioxide window layer.
5. A silicon-based broad spectrum detector array according to claim 1, wherein: the bottom Si material layer and the long wave absorption layer are staggered.
6. A silicon-based broad spectrum detector array according to claim 1, wherein: the long wave absorption layer is made of pure germanium, germanium-tin alloy or germanium-silicon alloy.
7. A method for fabricating a silicon-based broad spectrum detector array as defined in any one of claims 1 to 6, comprising the steps of:
s1, manufacturing an n-type heavily doped region and an n-type middle doped region on top silicon respectively, wherein the regions which are not doped are intrinsic regions;
s2, depositing silicon dioxide on the surface of the top silicon layer to manufacture a silicon dioxide window layer, wherein windows are formed in the silicon dioxide window layer corresponding to the upper regions of the n-type middle doped region and the intrinsic region;
s3, selecting an epitaxial growth long-wave absorption layer on the top silicon exposed in the window of the silicon dioxide window layer;
s4, manufacturing a p-type doped region at the top of the long-wave absorption layer;
s5, depositing an insulating medium layer on the long wave absorption layer and the silicon dioxide window layer;
s6, manufacturing an n electrode shared by all detector units on the top silicon corresponding to the n-type heavily doped region, wherein the n electrode is electrically connected with the n-type heavily doped region;
s7, manufacturing an independent p electrode on the p-type doped region of each detector unit, wherein the p electrode is electrically connected with the p-type doped region;
s8, annealing to form ohmic contact;
s9, thinning the bottom Si material layer, and removing the corresponding Si material layer below the long wave absorption layer to finish the preparation.
8. The method of claim 7, wherein: in the step S1, the thickness of the top layer silicon is more than 200nm, the thickness of the silicon dioxide filling layer is more than 300nm, and the crystal orientation of the top layer silicon 110 is<001>In the direction, the conduction type of the top layer silicon is p type, the resistivity is 10 ohm/cm, the injection depth of the n type heavily doped region is 0-340 nm, and the doping concentration is more than 1 multiplied by 10 19 cm -3 The ion implantation depth of the n-type middle doped region is 200-340 nm, and the doping concentration is greater than 1 x 10 18 cm -3 The conditions for high-temperature annealing activation are>800 ℃/10min。
9. The method of claim 7, wherein: in the step S2, silicon dioxide is deposited on the surface of the top silicon layer by adopting an ion-enhanced chemical vapor deposition system or a thermal oxidation method, and windows are opened on the silicon dioxide on the upper sides of the n-type middle doped region and the intrinsic region in an etching mode of combining a photoresist as a mask and a dry wet method.
10. The method of claim 7, wherein: in the step S3, a long-wave absorption layer is epitaxially grown in the window of the silicon dioxide window layer by adopting an ultrahigh vacuum chemical vapor deposition system.
11. The method of claim 7, wherein: in the step S8, the annealing temperature is 150-750 ℃.
12. The method of claim 7, wherein: in the step S9, the bottom Si material layer is thinned by adopting a mechanical grinding process, and then the corresponding Si material layer below the long-wave absorption layer is removed by adopting a photoresist as a mask and a dry etching mode, so that the preparation is completed.
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