CN115799994A

CN115799994A - Light emitting device

Info

Publication number: CN115799994A
Application number: CN202211677863.3A
Authority: CN
Inventors: 高飞; 张正杰; 纪云; 魏永强
Original assignee: Suzhou Liyu Semiconductor Co ltd
Current assignee: Suzhou Liyu Semiconductor Co ltd
Priority date: 2022-12-26
Filing date: 2022-12-26
Publication date: 2023-03-14

Abstract

The invention discloses a light-emitting device which comprises a semiconductor substrate, a first VCSEL light-emitting unit, a second VCSEL light-emitting unit, a first lens and a second lens. The semiconductor substrate is provided with a first surface and a second surface which are oppositely arranged; the first VCSEL light emitting unit is arranged on the first surface; the second VCSEL light emitting unit is arranged on the first surface and is electrically isolated from the first VCSEL light emitting unit; the first lens is formed on the second surface of the semiconductor substrate and is integrally formed with the semiconductor substrate, and the first lens is arranged corresponding to the first VCSEL light emitting unit; the second lens is formed on the second surface of the semiconductor substrate and is integrally formed with the semiconductor substrate, and the second lens is arranged corresponding to the second VCSEL light emitting unit; wherein the first lens projects a light beam of the first VCSEL light emitting unit with a different field of view than the second lens projects a light beam of the second VCSEL light emitting unit with a different field of view. The light-emitting device can realize different fields of view through different units on the same chip substrate, and meets the sensing requirements under different distance scenes.

Description

Light emitting device

Technical Field

The present invention relates to the field of semiconductor device technology, and more particularly, to a semiconductor light emitting device.

Background

The sensing device front face typically includes 1 infrared VCSEL transmitter, 1 infrared sensor (acquiring depth information), and multiple ambient light cameras (acquiring RBG information). The infrared emitter emits infrared rays, the infrared sensor receives the infrared rays after the infrared rays are reflected by a target object, and the distance/depth of field data is obtained by calculating and converting the difference between the emission signals and the receiving signals. The spot shape of the light of a VCSEL transmitter is circular and the lens is the most central element of VCSEL beam shaping. It is an optical element with extremely high diffraction efficiency, which is designed by computer aided design and semiconductor chip making process and has stepped or continuous relief structure etched on the substrate.

In recent years, the high-precision ultraviolet imprint lithography and ultraviolet bonding provide a technical basis for wafer-level processes, and the application of the wafer-level processes makes it possible to greatly reduce the cost of micro optical lenses, so that the conventional barrel camera module technology is gradually replaced. WLO first produces micro lenses at the wafer level using ultraviolet imprint lithography (UVimprint), followed by stacking the individual lenses using ultraviolet bonding (UV bonding). In the case of optical sensor production, the lens part and the sensor are finally integrated and modularized at the wafer level.

However, different application scenarios, such as different distances and environments, have different requirements on the light distribution of the field of view, so as to improve the field of view and reduce glare, etc., thereby improving sensing accuracy and application range. One approach is to use multiple separate VCSEL devices, but this adds to the cost of the system. Another is to sacrifice limited use scenarios where the accuracy and precision of detection may be affected in marginal condition scenarios. Meanwhile, in order to realize different fields of view, the traditional separated optical lens needs to be manufactured separately, and finally, the lens part and the sensor need to be integrated and modularized on a wafer level, so that the assembly cost, the precision alignment and the size of the device limit the application of the lens.

The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.

Disclosure of Invention

The invention aims to provide a light-emitting device which can realize different fields of view through different units on the same chip substrate and meet the sensing requirements under different distance fields.

To achieve the above object, an embodiment of the present invention provides a light emitting device including:

a semiconductor substrate having a first surface and a second surface oppositely arranged;

a first VCSEL light emitting unit disposed on the first surface;

a second VCSEL light emitting unit disposed on the first surface and electrically isolated from the first VCSEL light emitting unit;

the first lens is formed on the second surface of the semiconductor substrate and is integrally formed with the semiconductor substrate, and the first lens is arranged corresponding to the first VCSEL light emitting unit;

the second lens is formed on the second surface of the semiconductor substrate and is integrally formed with the semiconductor substrate, and the second lens is arranged corresponding to the second VCSEL light emitting unit;

wherein a field of view of the beam of the first VCSEL light emitting unit projected by the first lens is different from a field of view of the beam of the second VCSEL light emitting unit projected by the second lens.

In one or more embodiments of the present invention, the first VCSEL light emitting unit and the second VCSEL light emitting unit are electrically isolated from each other by a channel formed on the first surface of the semiconductor substrate.

An embodiment of the present invention provides a light emitting device including:

at least two groups of light source groups formed on the first surface of the semiconductor substrate, wherein the at least two groups of light source groups are electrically isolated from each other, and each group of light source groups comprises at least one VCSEL light emitting unit;

at least two groups of lens groups formed on the second surface of the semiconductor substrate, each group of lens groups being arranged corresponding to one group of light sources, each group of lens groups comprising at least one lens unit, each lens unit being arranged corresponding to one or more VCSEL light emitting units to project light beams emitted by the VCSEL light emitting units;

wherein at least one lens unit is present in one group of the lens groups, and projects a light beam of the corresponding VCSEL light emitting unit with a different field of view from a light beam of the corresponding VCSEL light emitting unit projected by at least one lens unit in the other group of the lens groups, and the lens groups are integrally formed with the semiconductor substrate.

In one or more embodiments of the present invention, at least two sets of the light source sets are electrically isolated from each other by a channel formed on the first surface of the semiconductor substrate.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and arrangement patterns of the VCSEL light emitting units in at least two of the light source groups are different.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and arrangement patterns of the VCSEL light emitting units in at least two of the light source groups are the same.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and at least two of the light source groups, wherein the VCSEL light emitting units in one of the light source groups are disposed around the VCSEL light emitting units in another of the light source groups.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and the VCSEL light emitting units in at least two of the light source groups occupy different areas.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and the VCSEL light emitting units of at least two of the light source groups occupy the same area.

Each light source group comprises a plurality of VCSEL light emitting units, and the arrangement pattern of the VCSEL light emitting units is an irregular pattern.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and an arrangement pattern of the plurality of VCSEL light emitting units is a regular pattern.

In one or more embodiments of the present invention, each of the light source groups includes at least one VCSEL light emitting unit, and the VCSEL light emitting units in at least two of the light source groups have different emission intensities.

In one or more embodiments of the present invention, each of the light source groups includes at least one VCSEL light-emitting unit, and the VCSEL light-emitting units in at least two of the light source groups have the same luminous intensity.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and the emission intensities of the VCSEL light emitting units are the same.

In one or more embodiments of the present invention, each of the light source groups includes a plurality of VCSEL light emitting units, and the VCSEL light emitting units have different emission intensities.

In one or more embodiments of the present invention, each group of the lens groups includes a plurality of lens units, each lens unit is disposed corresponding to one or more VCSEL light emitting units, and the light beams projected by the lens units from the corresponding VCSEL light emitting units have the same field of view.

In one or more embodiments of the present invention, each group of the lens groups includes a plurality of lens units, each lens unit is disposed corresponding to one or more VCSEL light-emitting units, and the fields of view of the light beams projected by the lens units of the corresponding VCSEL light-emitting units are different.

In one or more embodiments of the present invention, the lens unit is formed by etching the second surface of the semiconductor substrate.

In one or more embodiments of the present invention, the VCSEL light emitting unit includes a first DBR layer, a light emitting layer, an oxidation limiting layer, and a second DBR layer sequentially formed on a first surface of the semiconductor substrate, a first electrode electrically connected to the first DBR layer, and a second electrode electrically connected to the second DBR layer, wherein a light emitting hole is formed in the oxidation limiting layer, and a light beam emitted from the light emitting layer is emitted from a direction of the semiconductor substrate.

In one or more embodiments of the present invention, the first DBR layer surface is formed with an ohmic contact layer.

In one or more embodiments of the present invention, a first support is formed on the first DBR layer, a conductive layer electrically connected to the ohmic contact layer is formed on a surface of the first support, and the first electrode is formed on the conductive layer.

In one or more embodiments of the present invention, the first support is formed of the light-emitting layer, the oxide confinement layer, and the second DBR layer.

In one or more embodiments of the present invention, an insulating layer is formed between the conductive layer and the first support.

In one or more embodiments of the present invention, the material of the insulating layer includes: SIN, siON _x ，SiO _x Or a polymer.

In one or more embodiments of the present invention, the second electrodes of the VCSEL light emitting units in the same group of light sources are partially or completely connected.

In one or more embodiments of the present invention, the semiconductor substrate includes a conductive GaAs substrate, and the first electrode is formed on a second surface of the conductive GaAs substrate.

In one or more embodiments of the present invention, the VCSEL light emitting units in the same group of the light sources share the same second electrode.

In one or more embodiments of the present invention, a plurality of or all of the VCSEL light emitting units in a plurality of groups of the light source groups share the same second electrode.

In one or more embodiments of the present invention, an anti-reflection film layer is formed on the second surface of the semiconductor substrate.

In one or more embodiments of the present invention, the light emitting device includes:

the light source groups are electrically isolated, and each light source group comprises at least one VCSEL light-emitting unit;

three and more lens groups, each lens group corresponding to one light source group, each lens group including at least one lens unit, each lens unit corresponding to one or more VCSEL light emitting units arranged to project light beams emitted by the VCSEL light emitting units;

wherein, at least one lens unit is arranged in any group of the lens groups, the field of view of the light beam of the corresponding VCSEL light-emitting unit projected by the lens unit is different from the field of view of the light beam of the corresponding VCSEL light-emitting unit projected by at least one lens unit in other groups of the lens groups, and the lens groups are integrally formed with the semiconductor substrate.

Compared with the prior art, the light-emitting device provided by the embodiment of the invention realizes different view fields through different units on the same chip substrate, and meets the sensing requirements under different distance scenes.

The light-emitting device of the embodiment of the invention realizes the electrical isolation among different units through the deep channels on the semiconductor substrate, and can realize different optical field distributions in different channels.

According to the light-emitting device provided by the embodiment of the invention, the formation of the lens units with different viewing fields can be completed on the semiconductor substrate in the same step, and the integration is higher.

According to the light-emitting device, the lens unit and the VCSEL light-emitting unit are aligned through the photoetching alignment process, and the alignment precision is high.

Drawings

Fig. 1 is a schematic sectional structure of a light-emitting device of embodiment 1 of the present invention;

fig. 2 is a schematic sectional structure of a light-emitting device of embodiment 2 of the invention;

fig. 3 is a schematic front-surface structure of a light-emitting device of embodiment 3 of the invention;

fig. 4 is a schematic sectional structure of a light-emitting device of embodiment 3 of the invention;

fig. 5 is a schematic view of the back surface structure of a light-emitting device of embodiment 3 of the invention;

fig. 6 is a schematic front-surface structure view of a light-emitting device of embodiment 5 of the present invention.

Detailed Description

The following detailed description of the present invention is provided in conjunction with the accompanying drawings, but it should be understood that the scope of the present invention is not limited to the specific embodiments.

Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations such as "comprises" or "comprising", etc., will be understood to imply the inclusion of a stated element or component but not the exclusion of any other element or component.

A VCSEL (vertical cavity surface emitting laser) is an abbreviation of a vertical cavity surface emitting laser. The structure of the laser diode is that an upper Distributed Bragg Reflector (DBR) and a lower Distributed Bragg Reflector (DBR) with extremely high reflectivity are formed through epitaxial growth, and an active region and a vertical resonant cavity are arranged between the upper DBR and the lower DBR. Wherein the DBR is a multilayer film system composed of two kinds of semiconductor epitaxial thin films having different refractive indices. Such a system, by the theory of stimulated emission, can present a weak light after passing an injection current to it, this weak light exciting a strong light (optical amplification of the stimulated emission), which emerges from the surface, known as a vertical cavity surface emitting laser.

VCSELs have many advantages over LEDs (light emitting diodes) and EELs (edge emitting lasers). For example, the laser has the advantages of small active volume, low threshold voltage, small temperature drift coefficient of wavelength relative to temperature change, high quality of emitted circular light spots, high reliability, simple packaging, capability of forming a two-dimensional laser array and the like, and is widely applied.

Since its inception, VCSELs have become the light source for many applications. Serving optical communication, optical interconnection, laser printing, optical storage, etc. Since the introduction of VCSELs into apple cell phones, the strong functions of face recognition are realized, new applications of VCSELs for sensing are started. This demonstrates the potential of VCSEL light sources, which is a concern in the industry. The VCSEL chip substrate is not only applied to face recognition, but also widely applied to intelligent driving, machine vision, gesture recognition, robot navigation, collision avoidance of unmanned aerial vehicles, fatigue driving prevention and the like.

As background art shows, in different application scenarios, different requirements are imposed on field light distribution of a semiconductor device, but in the prior art, a mode of assembling a plurality of separated VCSEL devices increases system cost, and different lenses need to be manufactured separately for different fields and then integrated, which results in high assembly cost and poor alignment accuracy.

In order to solve the above technical problems, the present invention provides a light emitting device, in which an electrically isolated light source group is grown on one side of a semiconductor substrate, the light source group is composed of VCSEL light emitting units, and lens units with different focal lengths are etched on the other side of the semiconductor substrate to correspond to the VCSEL light emitting units so as to project different viewing fields.

An embodiment of the present invention provides a light emitting device, including:

The light emitting device of the present invention will be described in detail with reference to some specific examples.

Example 1:

as shown in fig. 1, an embodiment of the present invention provides a light emitting device including a semiconductor substrate 10, a first VCSEL light emitting unit 20, a second VCSEL light emitting unit 30, a first lens 40, and a second lens 50.

The semiconductor substrate 10 has a first surface 10a and a second surface 10b disposed oppositely; the first VCSEL light emitting unit 20 is disposed on the first surface 10 a; the second VCSEL light emitting unit 30 is also disposed on the first surface 10a and electrically isolated from the first VCSEL light emitting unit 20 by a deep trench 11, wherein the deep trench 11 is located between the first VCSEL light emitting unit 20 and the second VCSEL light emitting unit 30 and partially extends from the first surface 10a to the second surface 10b of the semiconductor substrate 10.

Illustratively, the semiconductor substrate is preferably a GaAs substrate. Each of the first VCSEL light-emitting unit 20 and the second VCSEL light-emitting unit 30 may include a first DBR layer 21, a light-emitting layer 22, an oxidation limiting layer 23, and a second DBR layer 24 sequentially formed on a first surface of a GaAs substrate, a first electrode 25 electrically connected to the first DBR layer 21, and a second electrode 26 electrically connected to the second DBR layer 24. A light emitting hole 231 is formed in the oxidation limiting layer 23, and a light beam emitted from the light emitting layer 22 is emitted from the GaAs substrate direction. The light-emitting layer 22, the oxide confinement layer 23 and the second DBR layer 24 are etched to form a mesa structure, an ohmic contact layer 211 is formed on the surface of the first DBR layer 21 at the periphery of the mesa structure, and the first electrode 25 is electrically connected to the first DBR layer 21 through the ohmic contact layer 211.

In the present embodiment, the emission intensities of the first VCSEL light-emitting unit 20 and the second VCSEL light-emitting unit 30 are the same or different, and the emission intensities of the first VCSEL light-emitting unit 20 and the second VCSEL light-emitting unit 30 can be controlled by enlarging the diameter of the mesa structure formed by the light-emitting layer 22, the oxidation-limiting layer 23, and the second DBR layer 24.

In this embodiment, the first support 60 is formed on the first DBR layer 21. The first support 60 may be formed by etching the light-emitting layer 22, the oxide confinement layer 23, and the second DBR layer 24 on the semiconductor substrate 10. The first support 60 can be formed simultaneously when the first VCSEL light-emitting unit 20 and the second VCSEL light-emitting unit 30 are formed, thereby further simplifying the process and reducing the cost. The first support 60 is provided as a dummy light emitting cell which does not emit light by itself and serves only as an auxiliary support for the first electrode 25, so that the light emitting device can be more stable when flipped.

A conductive layer 61 electrically connected to the ohmic contact layer 211 is formed on the surface of the first support 60, and an insulating layer 62 is formed between the conductive layer 61 and the first support 60. The material of the insulating layer 62 may include SIN, sion x, siOx, or a polymer. The first electrode 25 is formed on the conductive layer 61.

The first lens 40 is formed by etching the second surface 10b of the semiconductor substrate 10, and the first lens 40 is disposed corresponding to the first VCSEL light emitting unit 20. The second lens 50 is also formed by etching the second surface 10b of the semiconductor substrate 10, and the second lens 50 is disposed corresponding to the second VCSEL light emitting unit 30. Specifically, the first lens 40 is disposed to cover at least the light emitting hole 231 of the first VCSEL light emitting unit 20 in the thickness direction of the semiconductor substrate 10, or the first lens 40 is disposed to completely cover the first VCSEL light emitting unit 20 in the thickness direction of the semiconductor substrate 10. The second lens 50 is disposed to cover at least the light emitting hole of the second VCSEL light emitting unit 30 in the thickness direction of the semiconductor substrate 10, or the second lens 50 is disposed to completely cover the second VCSEL light emitting unit 30 in the thickness direction of the semiconductor substrate 10. Wherein the first lens 40 projects a light beam of the first VCSEL light emitting unit 20 with a different field of view from the second lens 50 projects a light beam of the second VCSEL light emitting unit 30 with a different field of view. Through the difference of lens for when first VCSEL luminescence unit 20 lights up, the distribution that the light distribution field of vision that the laser came out was different when second VCSEL luminescence unit 30 lights up with the distribution that the light distribution field of vision that the laser came out, realizes surveying under different distances and the environment, perhaps improves sensing effect in the sensing of different light distributions under same environment.

Illustratively, the focal lengths of the first lens 40 and the second lens 50 are different. Specifically, the first lens 40 and the second lens 50 may have different sizes, different shapes, different distributions, or different heights.

Example 2:

as shown in fig. 2, an embodiment of the present invention provides a light emitting device, which is different from example 1 in that, in this example, a semiconductor substrate is a conductive substrate, and a first electrode 25 is formed on a second surface 10b of the semiconductor substrate 10. In this structure, the first support 60 and the ohmic contact layer 211 need not be formed on the first DBR layer 21. And at this time, the first electrode of the first VCSEL light emitting unit 20 and the first electrode of the second VCSEL light emitting unit 30 may share the same first electrode.

Example 3:

as shown in fig. 3 to 5, an embodiment of the invention provides a light emitting device, which includes a semiconductor substrate 100, two sets of light source sets 200a and 200b, and two sets of

lens sets

300a and 300b.

The semiconductor substrate 100 has a first surface 100a and a second surface 100b disposed oppositely. The two light source sets 200a, 200b are formed on the first surface 100a of the semiconductor substrate 100, the two light source sets 200a, 200b are electrically isolated from each other by the deep trench 110, and the deep trench 110 is located between the two light source sets 200a, 200b and partially extends from the first surface 100a to the second surface 100b of the semiconductor substrate 100. Each light source group 200 includes a plurality of VCSEL light emitting units 210.

For example, the arrangement pattern of the VCSEL light emitting units in one of the light source groups 200a may be the same as or different from the arrangement pattern of the VCSEL light emitting units in the other light source group 200 b. The arrangement pattern of the VCSEL light emitting units in each

light source group

200a or 200b may be a regular pattern or an irregular pattern.

For example, the light emitting intensity of the VCSEL light emitting units in one of the light source groups 200a may be the same as or different from the light emitting intensity of the VCSEL light emitting units in the other light source group 200 b. The emission intensities of the VCSEL emission units in each

light source group

200a or 200b may be the same, or may be partially or completely different.

For example, the VCSEL light emitting units in one of the light source groups 200a may be disposed around the VCSEL light emitting units in the other light source group 200 b. The area occupied by the VCSEL light emitting units in one of the light source groups 200a and the area occupied by the VCSEL light emitting units in the other light source group 200b may be the same or different.

Illustratively, as can be seen with reference to fig. 5, the semiconductor substrate is preferably a GaAs substrate. The VCSEL light emitting unit 210 may include a first DBR layer 211, a light emitting layer 212, an oxidation limiting layer 213, and a second DBR layer 214 sequentially formed on the first surface 100a of the GaAs substrate, a first electrode 215 electrically connected to the first DBR layer 211, and a second electrode 216 electrically connected to the second DBR layer 214. A light emitting hole 2131 is formed in the oxidation limiting layer 213, and a light beam emitted from the light emitting layer 212 is emitted from the GaAs substrate. The light emitting layer 212, the oxide confinement layer 213 and the second DBR layer 214 are etched to form a mesa structure, an ohmic contact layer 2111 is formed on the surface of the first DBR layer 211 at the periphery of the mesa structure, and the first electrode 215 is electrically connected to the first DBR layer 211 through the ohmic contact layer 2111.

In the present embodiment, the emission intensity of the VCSEL emission unit 210 can be controlled by enlarging the diameter of the mesa structure formed by the emission layer 212, the oxide confinement layer 213, and the second DBR layer 214.

In this embodiment, the first support 600 is formed on the first DBR layer 211. The first support 600 may be formed by etching the light emitting layer 212, the oxide confinement layer 213, and the second DBR layer 214 on the semiconductor substrate 100. The first support 600 may be formed simultaneously with the formation of the VCSEL light emitting unit 210, which further simplifies the process and reduces the cost. The first support body 600 is provided as a dummy light emitting cell which does not emit light by itself and serves only as an auxiliary support for the first electrode 215, so that the light emitting device can be more stable when flipped.

A conductive layer 610 electrically connected to the ohmic contact layer 2111 is formed on the surface of the first support 600, and an insulating layer 620 is formed between the conductive layer 610 and the first support 600. The material of the insulating layer 620 may include SIN, siON _x ，SiO _x Or a polymer. The first electrode 215 is formed on the conductive layer 610.

In the present embodiment, the second electrodes 216 of the VCSEL light emitting units 210 in the same group of light source group 200a or light source group 200b are partially or completely connected.

As shown in fig. 4, two sets of

lens groups

300a, 300b are formed on the second surface 100b of the semiconductor substrate 100 and may both be formed by etching the second surface 100b of the semiconductor substrate 100, such that the

lens groups

300a, 300b are integrally formed with the semiconductor substrate 100. In order to improve the light extraction efficiency of the laser, an anti-reflection film layer is formed on the second surface 100b of the semiconductor substrate 100. Each group of

lens groups

300a or 300b is disposed corresponding to one group of

light source groups

200a or 200b, each group of

lens groups

300a or 300b includes a plurality of lens units 310, each lens unit 310 is disposed corresponding to one or more VCSEL light emitting units 210, i.e., each lens unit 310 is disposed to cover one or more VCSEL light emitting units 210 in a thickness direction of the semiconductor substrate 100 to project light beams emitted from the VCSEL light emitting units 210. At least one lens unit 310 is present in one group of lens groups 300a, which projects a light beam of the corresponding VCSEL light-emitting unit 210 with a different field of view than at least one lens unit 310 in the other group of lens groups 300b projects a light beam of the corresponding VCSEL light-emitting unit 210. Through the difference of lens group or lens unit for when a set of light source group is lighted, the distribution that the light distribution field of vision that the laser came out was different when another set of light source group was lighted and the distribution that the light distribution field of vision that the laser came out was different, realized the detection under different distances and the environment, perhaps the sensing of different light distributions under same environment promotes the sensing effect.

Illustratively, each group of

lens groups

300a, 300b includes a plurality of lens units 310, each lens unit 310 is disposed corresponding to one or more VCSEL light-emitting units 210, and the fields of view of the beams projected by the lens units 310 and corresponding to the VCSEL light-emitting units 210 may be the same or different. In particular, the lens units 310 in the two groups of

lens groups

300a and 300b may have different sizes, different shapes, different distributions, different heights, or different densities.

Similar to the distribution of the

light source groups

200a, 200b, the arrangement pattern of the lens units 310 in one group of the lens groups 300a and the arrangement pattern of the lens units 310 in the other group of the lens groups 300b may be the same or different, for example. The arrangement pattern of the lens units 310 in each group of

lens groups

300a or 300b may be a regular pattern or an irregular pattern.

Illustratively, the light emission intensity of the lens unit 310 in one lens group 300a and the light emission intensity of the lens unit 310 in the other lens group 300b may be the same or different. The light emission intensity of the lens units 310 in each group of

lens groups

300a or 300b may be the same, may be partially the same, or may be different entirely.

Illustratively, lens cells 310 in one of the lens groups 300a may be disposed around lens cells 310 in the other lens group 300b. The area occupied by the lens unit 310 in one lens group 300a and the area occupied by the lens unit 310 in the other lens group 300b may be the same or different.

Example 4:

an embodiment of the present invention provides a light emitting device having a structure substantially identical to that of example 3, except that in this example, the semiconductor substrate is a conductive substrate, and the first electrode 215 is formed on the second surface 100b of the semiconductor substrate 100. In this structure, the first support 600 and the ohmic contact layer 2111 need not be formed on the first DBR layer 211. And at this time, all VCSEL light emitting units 210 in each group of light source groups 200 partially or totally share the same second electrode 210. Some or all of the VCSEL light emitting units 210 in the two

light source groups

200a, 200b share the same second electrode 210.

Example 5:

as shown in fig. 6, an embodiment of the invention provides a light emitting device including a semiconductor substrate 100, three sets of light source sets 200, and three sets of lens sets.

The semiconductor substrate 100 has a first surface and a second surface disposed oppositely. Three sets of light source banks 200 are formed on the first surface of the semiconductor substrate 100, and two of the three sets of light source banks 200 are electrically isolated from each other by the deep trench 110, and the deep trench 110 is located between the three sets of light source banks 200 and partially extends from the first surface to the second surface of the semiconductor substrate 100. Each group of light source groups 200 includes a plurality of VCSEL light emitting units 210.

The three groups of lens groups are formed on the second surface of the semiconductor substrate 100 and may each be formed by etching the second surface of the semiconductor substrate 100 such that the lens groups are integrally formed with the semiconductor substrate 100. In order to improve the light extraction efficiency of the laser, an anti-reflection film layer is formed on the second surface of the semiconductor substrate 100. Each group of lens groups is disposed corresponding to one group of light source groups 200, and each group of lens groups includes a plurality of lens units, each lens unit being disposed corresponding to one or more VCSEL light emitting units 210 to project light beams emitted from the VCSEL light emitting units 210. At least one lens unit is present in one group of lenses, which projects a light beam of the corresponding VCSEL light-emitting unit 210 with a different field of view from a light beam of the corresponding VCSEL light-emitting unit 210 projected by at least one lens unit in the other group of lenses. Through the difference of lens group or lens unit for when a set of light source group is lighted, the distribution that the light distribution field of vision that the laser came out was different when another set of light source group was lighted and the distribution that the light distribution field of vision that the laser came out was different, realized the detection under different distances and the environment, perhaps the sensing of different light distributions under same environment promotes the sensing effect.

It is understood that the distribution of the three groups of light source groups 200 and the arrangement of the plurality of VCSEL light emitting units in each group of light source groups 200 can refer to the case of only two groups of

light source groups

200a and 200b in embodiment 3, and will not be explained in detail here. Similarly, the distribution of the three groups of lenses and the arrangement of the plurality of lens units in each group of lenses can also refer to the case of only two groups of

lenses

200a and 200b in embodiment 3, which is not explained in detail here.

Compared with the prior art, the light-emitting device provided by the embodiment of the invention realizes different fields of view on the same chip substrate through different units, and meets the sensing requirements under different distance scenes.

The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application to enable one skilled in the art to make and use various exemplary embodiments of the invention and various alternatives and modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.

Claims

1. A light emitting device, comprising:

a first VCSEL light emitting unit disposed on the first surface;

wherein a field of view of the light beams of the first VCSEL light emitting unit projected by the first lens is different from a field of view of the light beams of the second VCSEL light emitting unit projected by the second lens.

2. The light emitting device of claim 1, wherein the first VCSEL light emitting unit is electrically isolated from the second VCSEL light emitting unit by a channel formed in the first surface of the semiconductor substrate.

3. A light emitting device, comprising:

at least two groups of lens groups formed on the second surface of the semiconductor substrate, each group of lens groups being arranged corresponding to one group of light source groups, each group of lens groups including at least one lens unit, each lens unit being arranged corresponding to one or more VCSEL light emitting units to project light beams emitted by the VCSEL light emitting units;

4. The light emitting device of claim 3, wherein at least two of the banks of light sources are electrically isolated from each other by a channel formed in the first surface of the semiconductor substrate.

5. A light emitting device according to claim 3, wherein each of the light source groups includes a plurality of VCSEL light emitting units, and arrangement patterns of the VCSEL light emitting units in at least two of the light source groups are different; or

Each group of the light source groups comprises a plurality of VCSEL light emitting units, and arrangement patterns of the VCSEL light emitting units in at least two groups of the light source groups are the same.

6. A light emitting device in accordance with claim 3, wherein each of the light source groups comprises a plurality of VCSEL light emitting units, at least two of the light source groups, and wherein the VCSEL light emitting units in one of the light source groups are arranged to surround the VCSEL light emitting units in the other of the light source groups.

7. A light emitting device according to claim 3, wherein each of the light source groups includes a plurality of VCSEL light emitting units, and the VCSEL light emitting units in at least two of the light source groups have different areas; or

Each group of the light source groups comprises a plurality of VCSEL light emitting units, and the VCSEL light emitting units of at least two groups of the light source groups occupy the same area.

8. The light emitting device according to claim 3, wherein each of the light source groups includes a plurality of VCSEL light emitting units, and an arrangement pattern of the VCSEL light emitting units is an irregular pattern; or

Each light source group comprises a plurality of VCSEL light emitting units, and the arrangement pattern of the VCSEL light emitting units is a regular pattern.

9. A light emitting device as claimed in claim 3, wherein each of the light source groups comprises at least one VCSEL light emitting unit, and the VCSEL light emitting units in at least two of the light source groups have different light emission intensities; or

Each group of the light source groups comprises at least one VCSEL light emitting unit, and the light emitting intensities of the VCSEL light emitting units in at least two groups of the light source groups are the same.

10. The light emitting device according to claim 3, wherein each of the light source groups includes a plurality of VCSEL light emitting units, and the VCSEL light emitting units have the same emission intensity; or alternatively

Each set of the light source set comprises a plurality of VCSEL light emitting units, and the light emitting intensities of the VCSEL light emitting units are different.

11. A light emitting device according to claim 3, wherein each group of the lens groups includes a plurality of lens units, each lens unit is disposed corresponding to one or more VCSEL light emitting units, and the fields of view of the beams of light projected by the corresponding VCSEL light emitting units by the plurality of lens units are the same; or

Each group of lens groups comprises a plurality of lens units, each lens unit is arranged corresponding to one or more VCSEL light-emitting units, and the light beams of the corresponding VCSEL light-emitting units projected by the lens units have different fields of view.

12. The light-emitting device according to claim 3, wherein the lens unit is formed by etching the second surface of the semiconductor substrate.

13. A light-emitting device according to claim 3, wherein the VCSEL light-emitting unit includes a first DBR layer, a light-emitting layer, an oxide confinement layer, and a second DBR layer sequentially formed on the first surface of the semiconductor substrate, a first electrode electrically connected to the first DBR layer, and a second electrode electrically connected to the second DBR layer, wherein a light-emitting hole is formed in the oxide confinement layer, and a light beam emitted from the light-emitting layer is emitted from the direction of the semiconductor substrate.

14. A light-emitting device according to claim 13, wherein the first DBR layer surface is formed with an ohmic contact layer.

15. A light emitting device according to claim 14, wherein a first support is formed on the first DBR layer, a conductive layer electrically connected to the ohmic contact layer is formed on a surface of the first support, and the first electrode is formed on the conductive layer.

16. A light-emitting device according to claim 15, wherein the first support is formed of the light-emitting layer, an oxide confinement layer, and a second DBR layer.

17. The light-emitting device according to claim 15, wherein an insulating layer is formed between the conductive layer and the first support.

18. The light-emitting device according to claim 17, wherein a material of the insulating layer comprises: SIN, siON _x ，SiO _x Or a polymer.

19. The light emitting device of claim 13, wherein the second electrodes of the VCSEL light emitting units in the same group of light sources are partially or completely connected.

20. The light-emitting device according to claim 13, wherein the semiconductor substrate comprises a conductive GaAs substrate, and wherein the first electrode is formed on a second surface of the conductive GaAs substrate.

21. The light emitting device of claim 13, wherein the VCSEL light emitting units in the same group of the light sources share the same second electrode.

22. The light emitting device of claim 13, wherein a plurality or all of the VCSEL light emitting units in a plurality of groups of the light sources share the same second electrode.

23. The light-emitting device according to claim 3, wherein an antireflection film layer is formed on the second surface of the semiconductor substrate.