CN115799957B - Method and system for locking wavelength and narrowing linewidth of high-power semiconductor stacked array laser - Google Patents
Method and system for locking wavelength and narrowing linewidth of high-power semiconductor stacked array laser Download PDFInfo
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Abstract
The invention belongs to the field of high-power semiconductor lasers, and particularly relates to a method and a system for locking the wavelength and narrowing the line width of a high-power semiconductor stacked laser, wherein the method comprises the high-power semiconductor stacked laser, a beam shaping system, a transmission grating array and a reflector system; the invention has the advantages that: the invention regulates and controls the spectrum characteristics of different bars in the semiconductor array based on the 45-degree assembled transmission type grating array, and can ensure that the semiconductor is accurately locked to obtain the required wavelength; the problem of wavelength drift under the high power condition is solved greatly, so that a complex temperature control system is avoided; the overall power of the semiconductor laser array is ensured, and the inhibition requirement on other levels of light of the grating is reduced; efficient stacking and power expansion can be achieved.
Description
Technical Field
The invention belongs to the field of high-power semiconductor lasers, and particularly relates to a method and a system for performing wavelength locking and line width narrowing on a high-power semiconductor stacked array laser by using a transmission grating.
Background
Semiconductor lasers are a low cost and efficient source of high power density and high brightness coherent light. With the rapid development of laser technology, semiconductor lasers are widely used in various fields due to their high electro-optical conversion efficiency (usually not less than 60%), lightweight and compact volume structure, and wide band coverage. The power and linewidth (2-4 nm) of current commercially standard semiconductor lasers substantially meet the needs of various industries. However, in the field of high-power pumping, particularly in the fields of spin-polarized optical pumping, high-energy pumping gas laser pumping (semiconductor pumping alkali metal gas laser, semiconductor pumping metastable state gas laser, etc.), there is a more severe demand for the spectral characteristics of high-power semiconductor lasers. Based on the above requirements, various external cavity methods based on a dispersion optical element are developed in the industry, namely, an external cavity of a semiconductor laser is constructed, and mode competition in the resonant external cavity of the semiconductor laser is influenced by using the mode selection characteristics of the dispersion optical element, so that the spectrum regulation and control of the high-power semiconductor laser are realized. The most dominant schemes of dispersive elements in the external cavity approach are reflective surface gratings and bulk bragg gratings (Volume Bragg Gratings, VBG).
For reflective surface gratings, a ritman or littrow external cavity structure based on a reflective surface grating is commonly used to achieve narrow spectral compression of a semiconductor laser. By selecting the diffracted light reflected by the grating, accurate narrowing of the semiconductor can be facilitated, and excellent spectral effects can be achieved. But this limits the progress to higher power to some extent due to the lower threshold of reflective surface grating damage and the loss of the littrow or littmann structure due to low external cavity efficiency (-60%). Meanwhile, the reflective surface grating is restricted to develop to a compact and simple high-power laser module under certain conditions on the factors such as high requirements of light beam collimation, bending of light paths in a Littrow or Littman structure and the like.
The VBG has the advantages of compact structure, convenience, temperature regulation and the like, so that the VBG becomes a mainstream spectrum narrowing mode of the current bar or stacked array semiconductor laser. However, since natural light absorption exists in the photo-thermal-refractive glass (PTR glass) commonly used in VBG, a significant temperature rise occurs with the increase of laser power, and thus the refractive index in the PTR glass material changes, so that the period of the grating in the VBG changes further, which causes the wavelength fed back by the VBG to drift from the initial value. This variation is particularly pronounced in high power semiconductor laser narrowing applications where the semiconductor laser exhibits wavelength drift (drift factor 8-10 pm/K) after narrowing. Therefore, in the semiconductor stacked array, separate temperature control is required for VBG corresponding to each bar to ensure that the overall spectrum is locked at the desired wavelength. Due to the presence of the temperature control system, the position of each bar in the stack needs to be designed and optimized, and cannot be placed tightly, which results in a reduced beam duty cycle and reduced laser brightness in the stack, which is disadvantageous for high power pumping.
Disclosure of Invention
The invention provides a method and a system for locking wavelength and narrowing linewidth of a high-power semiconductor stacked array laser, which solve the problems of complex structure and low efficiency of an external cavity of a reflective grating based on an external cavity narrowing scheme of a 45-degree assembled transmission type grating array. The wavelength of the external cavity semiconductor is directly related to the grating angle, and the accurate locking of the wavelength can be realized by fixing the grating angle. The substrate material of the transmission grating can be low-absorption materials such as high-purity fused silica glass, the light absorption of the transmission grating is far lower than that of PTR glass, the wavelength drift caused by temperature rise under the high power condition can be far smaller than VBG, and the power and wavelength stability of the semiconductor stacked array laser can be improved on the premise of not influencing the compactness of the system.
The technical scheme adopted by the invention is that the method for locking the wavelength and narrowing the line width of the high-power semiconductor stacked array laser comprises the following steps:
s1, selecting a high-power semiconductor stacked array laser with an output spectrum covering the wavelength according to the required wavelength;
s2, determining transmission grating parameters: parameters of the transmission grating, such as the number of lines and diffraction angle of the transmission grating, are designed according to the required wavelength; the design basis is the formula sin theta a ±sinθ b =nλ, where θ a For incident angle, theta b Is the diffraction angle of-1 level, N is the number of grating lines per millimeter, and lambda is the wavelength of-1 level diffracted light; when theta is as a ＝θ b When the number of the transmission grating lines is=45°, the transmission grating lines pass through the formulaDesigned for the desired wavelength;
s3, using an optical shaping system to enable the high-power semiconductor stacked array laser to output laser beams for collimation so as to ensure the effect of transmitting the narrow semiconductor linewidth of the grating voltage;
s4 n transmission gratings are in one-to-one correspondence with n semiconductor bars in the high-power semiconductor stacked array laser, and form a transmission grating array, wherein the arrangement direction of the transmission grating array is consistent with the distribution direction of the semiconductor bars, and n is more than or equal to 2;
s5, forming a laser resonant outer cavity by each transmission grating and a rear cleavage surface of the corresponding semiconductor bar;
s6, when the collimated light beam passes through the transmission grating, transmission, reflection and diffraction can occur, and 0-level non-diffraction light transmission, 1-level diffraction light transmission, 0-level non-diffraction light reflection and 1-level diffraction light reflection are generated; when the transmission grating is assembled at an angle of 45 degrees with the direction of incident light, reflected-1-order diffraction light generated at the transmission grating returns to the semiconductor bar along an original path, at the moment, the spectrum linewidth of the semiconductor bar is narrowed and the center wavelength is locked at the wavelength of the reflected-1-order diffraction light under the mode competition effect of a laser resonance outer cavity formed by the transmission grating and a rear cleavage surface of the semiconductor bar; the propagation direction of the reflected 0 th-order non-diffracted light is vertically downward; the propagation direction of the transmission-1 st diffraction light is vertically upward; the non-diffracted light of the transmission 0 level continues to propagate along the original path;
s7, utilizing a pair of reflecting mirror systems which are respectively placed at 135 degrees and 45 degrees with the horizontal direction to realize the utilization of light in two parts, namely vertical upward and vertical downward, wherein one surface of reflecting mirror is placed right above the transmission grating array and is placed at 135 degrees with the horizontal direction, and n beams of vertically upward transmitted-1 st-order diffraction light are reflected to be horizontal light output; the other surface reflecting mirror is arranged under the transmission grating array and is arranged at an angle of 45 degrees with the horizontal direction, and reflects n beams of reflected 0-level non-diffracted light which vertically propagates downwards into horizontal light output;
s8, the angle of each transmission grating is independently adjusted, so that the central wavelength of each corresponding semiconductor bar spectrum is tuned to the required wavelength, and the integral wavelength locking and line width narrowing of the semiconductor stacked laser are realized.
The invention also provides a high-power semiconductor stacked array laser system based on the method, which has the functions of wavelength locking and line width narrowing, and comprises a high-power semiconductor stacked array laser 1, wherein the high-power semiconductor stacked array laser 1 is used as a gain element to provide gain for a laser resonant outer cavity; the beam shaping system 2 is used for collimating the laser output by the high-power semiconductor stacked laser 1; the transmission grating array 3 is used as an output coupling mirror for constructing a laser resonant outer cavity and is also used as a mode selection element in the cavity, so that line width narrowing and center wavelength locking of a semiconductor stacked array spectrum are realized; a mirror system 4 for horizontally outputting all of the transmitted-1 st order diffracted light and the reflected 0 th order undiffracted light generated at the transmission grating array;
the high-power semiconductor stacked array laser 1 consists of n semiconductor bars distributed in one dimension, wherein n is more than or equal to 2, each bar outputs laser to enter a corresponding beam shaping system and transmission gratings respectively, the n transmission gratings are distributed in one dimension, and meanwhile, a transmission-1 diffraction light path and a reflection 0 non-diffraction light path of the n transmission gratings are all on the same straight line; two 45 DEG reflectors are respectively arranged right above and right below the transmission grating array.
Preferably, n bars in the high-power semiconductor stacked laser 1 of the present invention are arranged in a vertical stacking or horizontal stacking manner, and the pitches between the bars are equal.
Preferably, the reflectivity of the transmission grating coating with the required wavelength should be designed for different polarization states (such as TM polarization or non-polarization) of the semiconductor laser, so that the transmission grating reflection-1 st order diffraction efficiency and 0 th order non-diffraction light transmittance can still ensure that the external cavity semiconductor system has enough external cavity efficiency (> 70%) while realizing line width narrowing even if facing different application scenes (such as a semiconductor laser array or a semiconductor polarization beam-combining optical fiber coupling module).
Preferably, the beam shaping system 5 is a combination of a fast axis collimating lens (FAC) and a slow axis collimating lens (SAC), and the laser emitted by each bar is collimated and output after being shaped by the fast axis collimating lens and the slow axis collimating lens.
Preferably, the substrate material of the transmission grating in the transmission grating array 3 uses a high purity fused silica substrate, which has much lower light absorption properties than PTR glass, so that the wavelength shift phenomenon is much lower than VBG at high power.
Furthermore, the system is also used for a semiconductor optical fiber coupling module (a polarization beam combining module and a step beam combining module), and only one transmission grating is needed to be added in front of the optical fiber coupling lens according to the principle.
Compared with the prior art, the invention has the advantages that:
1. the invention regulates and controls the spectral characteristics of different bars in a semiconductor array based on 45-degree assembled transmission grating array: the transmission type plane grating is used for replacing a reflection type plane grating in a traditional Littrow structure external cavity semiconductor stacked array system, reflection-1-level diffraction light is directly used as feedback light to realize regulation and control of a semiconductor bar spectrum, and transmission 0-level non-diffraction light is used as output light. This configuration allows the optical path to be unbiased and the overall external cavity system to be more compact than a littmann or littrow external cavity configuration using a reflective grating. Meanwhile, the angle of incidence of the transmission grating and the angle of diffraction of the reflection-1 order are both 45 degrees, and other order lights can be fully utilized through 45 degrees and 135 degrees of assembled total reflection mirrors, so that the overall power of the semiconductor laser array is ensured, and the inhibition requirement on other order lights of the grating is reduced.
2. The transmission type grating adopts a high-purity fused quartz substrate or other low-heat absorbing materials, the temperature change is low under high-power incidence, the grating line number change is in ppm level, compared with VBG, the wavelength drift problem under the high-power condition is greatly solved, and therefore a complex temperature control system is avoided.
3. The strip-shaped transmission gratings are in one-to-one correspondence with each bar, are matched with a standard stacked array packaging process, do not influence the duty ratio of light beams, and can realize efficient stacking and power expansion.
Drawings
FIG. 1 is a schematic diagram illustrating the assembly of a high-power narrow-linewidth semiconductor bar array based on a transmission grating according to the present invention;
FIG. 2 is a schematic and schematic diagram of the connection of a single 45 fabricated transmission grating to the fast axis alignment, slow axis alignment system, single semiconductor bar of FIG. 1;
FIG. 3 is a diagram of the operation of the top reflection system of FIG. 1 with a 45 ° assembled transmission grating array to produce a transmission-1 order diffracted beam of light and output horizontally;
FIG. 4 is an operational diagram of the bottom reflection system of FIG. 1 with a 45 ° assembled transmission grating array producing a transflective 0 th order non-diffracted beam of light and output horizontally.
Detailed Description
The invention is further described below with reference to the drawings and specific examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, in this embodiment, a high-power semiconductor stacked laser including 10 semiconductor bars is illustrated as an example, where the high-power semiconductor stacked laser 1 includes 10 semiconductor bars 11 vertically stacked in a vertical direction, and the semiconductor bars 11 of the high-power semiconductor stacked laser 1 all form a laser external cavity with a transmission grating 3 through a beam shaping system 2 including a fast axis collimating lens 21 and a slow axis collimating microlens 22.
Wherein fig. 2 is a schematic illustration of the connection of a single 45 deg. fabricated transmission grating to a single beam shaping system, a single semiconductor bar of fig. 1. As can be seen from fig. 2, the laser beam directly emitted from the semiconductor bar 11 is shaped by the fast axis collimating lens 21 and the slow axis collimating lens 22, and then the beam is transmitted in a near-collimation state; when the collimated light beam passes through the transmission grating 31, diffraction, reflection and transmission occur, and transmission 0 th order non-diffracted light a, transmission-1 st order diffracted light B, reflection 0 th order non-diffracted light C and reflection-1 st order diffracted light D are generated. The number of lines of the transmission grating has passed the formulaDesigned for the desired wavelength, the reflected-1 st order diffracted light D generated at the transmission grating 31 will be returned back into the semiconductor bar 11 along the original path when the transmission grating is assembled at an angle of 45 ° to the direction of the incident light. At this time, the transmission grating 31 and the rear cleavage surface of the semiconductor bar 11 form an external cavity of the laser, the spectral linewidth of the semiconductor bar 11 is narrowed under the mode competition effect, and the center wavelength is locked at the wavelength D of the reflected-1 st diffraction light; the propagation direction of the reflected 0-order non-diffracted light C is vertically downward; the propagation direction of the transmission-1 st-order diffraction light B is vertically upward; the transmitted 0 th order undiffracted light a continues to propagate along the original path.
The single 45 ° assembled transmission grating 31 in fig. 2 thus constitutes, with the fast axis collimation 21, the slow axis collimation system 22, the single semiconductor bar 11 alone, a separate semiconductor resonant external cavity that allows the reflected-1 st order diffracted light D wavelength to meet the resonance self-reproduction conditions. While the reflected-1 st order diffracted light D continuously re-injected into the semiconductor bar gives the light of this wavelength a mode-competing advantage, so that finally the independent semiconductor resonant external cavity output wavelength is the same as the reflected-1 st order diffracted light D wavelength, the output linewidth depending on the grating resolution of the transmission grating 31. The output power is determined by the transmittance of the 0 th order undiffracted light A.
When 10 independent external cavity semiconductor laser systems as shown in fig. 2 are stacked according to fig. 1, 10 transmission gratings form a one-dimensional transmission grating array and are arranged along the vertical direction, 10-1 diffraction beams emitted at this time vertically propagate along the same straight line, and 10 0 non-diffraction beams reflected at this time vertically propagate along the same straight line downwards, as shown in fig. 3 and 4, respectively.
The mirror system 4 comprises two mirrors, located vertically directly above and directly below the transmission grating array,
wherein a top mirror located vertically directly above the transmission grating array is mounted at 135 deg. to the horizontal, the process of reflecting the vertically upward propagating diffracted light beam of transmission-1 order is shown in fig. 3. And all the transmission-1 st-order diffraction light generated by the transmission grating array is combined in the upward propagation process. When reaching the top reflector, beam combination is completed, and the beams are totally reflected by the top reflector and horizontally output; the bottom reflector positioned right below the transmission grating array is assembled at 45 degrees with the horizontal direction, the process of reflecting the vertical downward-propagating reflection 0 non-order diffraction light beam is shown in fig. 4, and the beam combination is realized in the downward-propagating process of all the reflection 0 non-order diffraction light generated by the transmission grating array. The beam combination is completed when reaching the bottom reflector, and the beam combination is totally reflected by the bottom reflector and horizontally output.
From the above description, it can be seen that the spectral properties of the external cavity corresponding to each bar are determined by the corresponding transmission grating, and each external cavity has the same and reasonable energy feedback ratio (-10%, the value can be changed by adjusting the diffraction efficiency of the transmission grating-1 order), and high external cavity efficiency (-70%, the value can be changed by adjusting the transmittance of the transmission grating for transmitting 0 order non-diffracted light), meanwhile, high purity quartz is adopted as the substrate material of the transmission grating to reduce wavelength-temperature drift, so that a complex temperature control system is avoided, and the system is more compact.
The narrow linewidth high power semiconductor array system based on wavelength locking of the transmission grating is described in detail. The principles and embodiments of the present invention have been described herein with reference to specific examples, but are only preferred embodiments of the invention and are not intended to limit the invention thereto, as such modifications and variations will occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A method for locking wavelength and narrowing linewidth of a high-power semiconductor stacked array laser is characterized by comprising the following steps:
s1, selecting a high-power semiconductor stacked array laser with an output spectrum covering the wavelength according to the required wavelength;
s2, determining transmission grating parameters: parameters of the transmission grating, such as the number of lines and diffraction angle of the transmission grating, are designed according to the required wavelength; the design basis is the formula sin theta a ±sinθ b =nλ, where θ a For incident angle, theta b Is the diffraction angle of-1 level, N is the number of grating lines per millimeter, and lambda is the wavelength of-1 level diffracted light; when theta is as a ＝θ b When=45°, the transmission grating line number is designed for the desired wavelength by the formula n=2λ;
s3, using an optical shaping system to enable the high-power semiconductor stacked array laser to output laser beams for collimation so as to ensure the effect of transmitting the narrow semiconductor linewidth of the grating voltage;
s4 n transmission gratings are in one-to-one correspondence with n semiconductor bars in the high-power semiconductor stacked array laser, and form a transmission grating array, wherein the arrangement direction of the transmission grating array is consistent with the distribution direction of the semiconductor bars, and n is more than or equal to 2;
s5, forming a laser resonant outer cavity by each transmission grating and a rear cleavage surface of the corresponding semiconductor bar;
s6, when the collimated light beam passes through the transmission grating, transmission, reflection and diffraction can occur, and 0-level non-diffraction light transmission, 1-level diffraction light transmission, 0-level non-diffraction light reflection and 1-level diffraction light reflection are generated; when the transmission grating is assembled at an angle of 45 degrees with the direction of incident light, reflected-1-order diffraction light generated at the transmission grating returns to the semiconductor bar along an original path, at the moment, the spectrum linewidth of the semiconductor bar is narrowed and the center wavelength is locked at the wavelength of the reflected-1-order diffraction light under the mode competition effect of a laser resonance outer cavity formed by the transmission grating and a rear cleavage surface of the semiconductor bar; the propagation direction of the reflected 0 th-order non-diffracted light is vertically downward; the propagation direction of the transmission-1 st diffraction light is vertically upward; the non-diffracted light of the transmission 0 level continues to propagate along the original path;
s7, utilizing a pair of reflecting mirror systems which are respectively placed at 135 degrees and 45 degrees with the horizontal direction to realize the utilization of light in two parts, namely vertical upward and vertical downward, wherein one surface of reflecting mirror is placed right above the transmission grating array and is placed at 135 degrees with the horizontal direction, and n beams of vertically upward transmitted-1 st-order diffraction light are reflected to be horizontal light output; the other surface reflecting mirror is arranged under the transmission grating array and is arranged at an angle of 45 degrees with the horizontal direction, and reflects n beams of reflected 0-level non-diffracted light which vertically propagates downwards into horizontal light output;
s8, the angle of each transmission grating is independently adjusted, so that the central wavelength of each corresponding semiconductor bar spectrum is tuned to the required wavelength, and the integral wavelength locking and line width narrowing of the semiconductor stacked laser are realized.
2. A high power semiconductor stacked laser system based on the method of claim 1, characterized in that: the high-power semiconductor stacked array laser has the functions of wavelength locking and line width narrowing, and comprises a high-power semiconductor stacked array laser (1), wherein the high-power semiconductor stacked array laser (1) is used as a gain element to provide gain for a laser resonant outer cavity; the beam shaping system (2) is used for collimating the laser output by the high-power semiconductor stacked laser 1; the transmission grating array (3) is used as an output coupling mirror for constructing a laser resonant outer cavity and is also used as a mode selection element in the cavity, so that line width narrowing and center wavelength locking of a semiconductor stacked array spectrum are realized; a mirror system (4) for horizontally outputting all of the transmitted-1 st order diffracted light and the reflected 0 th order undiffracted light generated at the transmission grating array;
the high-power semiconductor stacked array laser (1) is formed by n semiconductor bars distributed in one dimension, n is more than or equal to 2, each bar outputs laser to enter a corresponding beam shaping system and transmission gratings respectively, the n transmission gratings are distributed in one dimension, and meanwhile, a transmission-1 diffraction light path and a reflection 0 non-diffraction light of the n transmission gratings are all on the same straight line; two 45 DEG reflectors are respectively arranged right above and right below the transmission grating array.
3. A high power semiconductor stacked laser system based on claim 2, wherein: n bars in the high-power semiconductor stacked array laser (1) are arranged in a vertical stacking or horizontal stacking mode, and the distances among the bars are equal.
4. A high power semiconductor stacked laser system based on claim 2, wherein: the reflectivity of the transmission grating coating with the required wavelength is designed according to different polarization states of the semiconductor laser, so that the transmission grating reflection-1 st diffraction efficiency and the 0 th non-diffraction light transmittance can still ensure that the external cavity semiconductor system has the external cavity efficiency of more than 70 percent while realizing line width narrowing even facing different application scenes.
5. A high power semiconductor stacked laser system based on claim 2, wherein: the beam shaping system (2) is a combination of a fast axis collimating lens and a slow axis collimating lens, and the laser emitted by each bar is collimated and output after being subjected to beam shaping through the fast axis collimating lens and the slow axis collimating lens.
6. A high power semiconductor stacked laser system based on claim 2, wherein: the substrate material of the transmission grating in the transmission grating array (3) uses a high-purity fused quartz substrate.
7. A high power semiconductor stacked laser system based on any of claims 2 to 6, characterized in that: the high-power semiconductor stacked array laser system is also used for a semiconductor optical fiber coupling module, and only one transmission grating is needed to be added in front of an optical fiber coupling mirror.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102016658A (en) * | 2008-05-05 | 2011-04-13 | 纳诺科普有限公司 | Light manipulation arrangement |
| CN102916341A (en) * | 2012-10-31 | 2013-02-06 | 中国科学院长春光学精密机械与物理研究所 | Method for combining beams of single-tube semiconductor laser devices |
| CN205828877U (en) * | 2016-06-12 | 2016-12-21 | 上海高意激光技术有限公司 | A kind of conjunction restraints semicondcutor laser unit |
| CN110459958A (en) * | 2019-09-16 | 2019-11-15 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and line width compression device and method |
| CN111799655A (en) * | 2020-06-08 | 2020-10-20 | 深圳活力激光技术有限公司 | High power semiconductor laser |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102016658A (en) * | 2008-05-05 | 2011-04-13 | 纳诺科普有限公司 | Light manipulation arrangement |
| CN102916341A (en) * | 2012-10-31 | 2013-02-06 | 中国科学院长春光学精密机械与物理研究所 | Method for combining beams of single-tube semiconductor laser devices |
| CN205828877U (en) * | 2016-06-12 | 2016-12-21 | 上海高意激光技术有限公司 | A kind of conjunction restraints semicondcutor laser unit |
| CN110459958A (en) * | 2019-09-16 | 2019-11-15 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and line width compression device and method |
| CN111799655A (en) * | 2020-06-08 | 2020-10-20 | 深圳活力激光技术有限公司 | High power semiconductor laser |
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