CN115776041A - High-power silicon-based III-V family external cavity laser based on tapered waveguide gain - Google Patents
High-power silicon-based III-V family external cavity laser based on tapered waveguide gain Download PDFInfo
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Abstract
The invention discloses a high-power silicon-based III-V end-face coupled external cavity laser based on tapered waveguide gain. The conical waveguide gain obviously improves the heat radiation performance and the saturation power by increasing the area of the waveguide, correspondingly improves the upper limit of the input current, can realize output in watt level, and is several times higher than the maximum power of the traditional narrow ridge waveguide gain. The end face structure of the nonlinear spot size converter on the external cavity chip and the tapered end face structure of the gain chip have high mode matching degree, and the transverse mode size is gradually reduced through the nonlinear gradual change structure until the end face structure is completely matched with the external cavity straight waveguide. The invention relates to an on-chip laser, which has the advantages of high integration level, high feasibility and contribution to large-scale production, can simultaneously realize performance indexes such as high power, narrow line width, wide tuning and the like, and can be applied to the fields of wavelength division multiplexing systems, laser radar systems and the like.
Description
Technical Field
The invention relates to the field of silicon-based optoelectronics and integrated optoelectronics, in particular to a high-power silicon-based III-V group external cavity laser based on tapered waveguide gain.
Background
Lasers with high power, narrow linewidth and wide tuning range have important applications in the fields of coherent optical communication, laser radar, microwave photonics and the like. Although the current commercial solid-state laser, fiber laser and semiconductor bulk external cavity laser can meet the requirements on performance, the current commercial solid-state laser, fiber laser and semiconductor bulk external cavity laser cannot be comparable to a semiconductor chip integrated laser in the aspects of size, volume, power consumption and the like.
Common group III-V bulk lasers include distributed feedback lasers (DFBs), vertical Cavity Surface Emitting Lasers (VCSELs), distributed bragg grating lasers (DBRs), and the like. These lasers have the advantages of small size and low power consumption. However, due to the limitations of the cavity length and the limited free spectral range of the grating, the laser has a large linewidth (at least in the order of hundreds of kHz), and a small tuning range (generally less than 70 nm).
In order to compress the line width of the III-V group semiconductor laser, increase the tuning range and control the volume and cost of the laser, the III-V group gain and the silicon-based chip can be integrated in a heterogeneous mode to realize the external cavity laser. Based on the advantages of low loss and high integration density of the silicon-based waveguide platform, the external cavity chip has a filter with narrow pass band, wide tuning and large free spectral range, and provides low loss and large delay function, so that the performances such as line width, tuning range and the like are greatly improved. However, the external cavity laser introduces coupling loss and external cavity loss, so that the laser output power is low.
The traditional III-V group single transverse mode semiconductor laser adopts narrow ridge waveguide with ridge width of about 2-3 microns. The ridge width is beneficial to outputting single transverse mode light spots and can be efficiently coupled with a conventional silicon-based external cavity chip. However, the narrow ridge waveguide has low saturation power and poor heat dissipation, so that the allowable input current is low, and high-power (watt level) output cannot be realized. The multi-transverse-mode wide waveguide III-V group semiconductor laser obviously increases the heat dissipation area and saturation power of the waveguide, can improve the injection current to a greater extent and obviously improves the output power, but is not beneficial to forming a single transverse-mode laser by heterogeneous integration with a silicon-based chip due to the existence of the multi-transverse-mode wide waveguide III-V group semiconductor laser.
Disclosure of Invention
Aiming at the problem of low power in the current silicon-based external cavity laser, the invention provides a high-power silicon-based III-V group external cavity laser based on tapered waveguide gain. The tapered waveguide gain chip in the laser has the advantages of high saturation power and good heat dissipation characteristic, and provides high output power. The tapered waveguide gain chip outputs a flat single transverse mode optical field by virtue of a section of single transverse mode waveguide, a tapered change structure and an external cavity single transverse mode feedback characteristic. The nonlinear mode spot coupler gradually compresses the flat single mode optical field to a single mode optical field matched to the external cavity waveguide. The invention provides a high-power, narrow-linewidth and wide-tuning on-chip laser which can be applied to a large-scale photoelectric chip system.
The technical solution of the invention is as follows:
a high-power silicon-based III-V family end-face coupled external cavity laser based on tapered waveguide gain comprises a reflection-type semiconductor optical amplifier and a silicon-based photonic external cavity chip, wherein a mode spot converter and other external cavity devices are integrated on the silicon-based photonic external cavity chip. The semiconductor optical amplifier adopts a structure of a rear end narrow waveguide and a front end tapered waveguide. The wide waveguide part increases the waveguide area, the upper limit of input current is obviously improved, the output power can be effectively improved, the narrow ridge waveguide part can limit the mode of light, and the light is output from the tapered waveguide part in a single transverse mode. Because the external cavity only feeds back a single transverse mode, the semiconductor optical amplifier can also integrally adopt a wide waveguide structure. The rear end of the semiconductor optical amplifier has high reflectivity which is more than or equal to 90%, and the front end of the semiconductor optical amplifier has high transmissivity which is less than or equal to 0.005%. The active region of the semiconductor optical amplifier adopts a chirp quantum well structure, and by overlapping a plurality of quantum well gain curves, a more gentle and wider spectrum is realized, so that the bandwidth of the semiconductor optical amplifier is improved, a gain basis is provided for realizing a wide tuning range, and the active region can also adopt a quantum wire structure or a quantum dot structure. The spot size converter is used for coupling the reflection type semiconductor optical amplifier and other external cavity devices. The end face structure of the spot size converter is matched with the tapered end face structure of the semiconductor optical amplifier in a high mode matching degree, and the spot size converter gradually reduces the transverse size of a light spot through a nonlinear gradual change structure until the spot size converter is completely matched with the external cavity waveguide. The nonlinear graded structure can realize higher mode field conversion efficiency with smaller size. To reduce the effect of parasitic reflections, the waveguides of the coupling end face may be tilted.
Further, the semiconductor optical amplifier and the silicon-based external cavity chip are integrated in an end-face coupling mode, the tapered front end of the tapered waveguide semiconductor optical amplifier outputs flat single-mode light spots (the transverse dimension is dozens of microns, such as 120 microns, and the longitudinal dimension is about 1-3 microns), while the output of the traditional narrow-ridge semiconductor optical amplifier outputs very small single-mode light spots (the transverse dimension is about 2-5 microns, and the longitudinal dimension is about 1-3 microns). Because big facula compares little facula and aligns more easily, consequently, in the horizontal direction, the coupling tolerance of tapered waveguide semiconductor optical amplifier promotes to show than traditional narrow ridge semiconductor optical amplifier, can reduce the alignment accuracy of coupling equipment, is showing and is promoting production efficiency.
The laser only needs the semiconductor optical amplifier to be coupled with the silicon-based external cavity chip once, so that the packaging cost is low and the chip reliability is high.
Further, the other external cavity devices include a first phase shifter, a second phase shifter, a first multimode interference coupler, a second multimode interference coupler, a first micro-ring filter, a second micro-ring filter, and a directional coupler. The front end of the semiconductor optical amplifier is coupled with the front end of the spot size converter, the rear end of the spot size converter is connected with the front end of the first phase shifter, the rear end of the first phase shifter is connected with the front end of the first multimode interference coupler, two channels at the rear end of the first multimode interference coupler are respectively connected with the front end of the first micro-ring filter and the front end of the second micro-ring filter, the rear ends of the first micro-ring filter and the second micro-ring filter are connected with the front end of the directional coupler, two channels at the rear end of the directional coupler are respectively connected with the front end of the second phase shifter and one channel at the front end of the second multimode interference coupler, the rear end of the second phase shifter is connected with the other channel at the front end of the second multimode interference coupler, and the rear end of the multimode interference coupler is the output end of the laser. Except the semiconductor optical amplifier, other components jointly form a silicon-based external cavity chip.
Preferably, the first phase shifter and the second phase shifter are thermo-optic phase shifters or electro-optic phase shifters.
Preferably, the first micro-ring filter and the second micro-ring filter are two micro-ring structures with slightly different radiuses, and other structures with filtering functions such as gratings can also be adopted.
Preferably, the first multimode interference coupler, the two micro-ring filters, the directional coupler and the waveguide connecting the first multimode interference coupler, the two micro-ring filters and the directional coupler together form a Sagnac annular reflector, and other structures with reflection functions such as bragg gratings can also be adopted.
Preferably, the splitting ratio of the directional coupler corresponds to the output and feedback ratios. The directional coupler can also be replaced by a 2 × 2 multimode interferometer with the same effect and other adiabatic directional couplers with a 2 × 2 channel coupling function.
Except the semiconductor optical amplifier, other components can be realized by materials with waveguide function, such as silicon nitride materials, silicon materials or silicon dioxide materials.
Compared with the prior art, the invention has the beneficial effects that:
1) The relation among the three indexes of the laser, namely high power, narrow line width and wide tuning, is decoupled, so that the external cavity laser can output high power while realizing the performance of narrow line width and wide tuning. The problems of low coupling efficiency of the wide waveguide and the silicon-based external cavity, multi-transverse-mode output and the like are solved, and the method can be applied to a large-scale photoelectric chip system.
2) The FDTD software is utilized to carry out simulation, and the length of the nonlinear spot size converter is about 30% shorter than that of the linear spot size converter under the condition of 1% mode loss, so that the size of the laser can be effectively reduced, and the system integration level is further improved.
3) The active region of the semiconductor optical amplifier adopts a chirped quantum well structure, and a plurality of quantum well gain curves are overlapped to realize a more gentle and wider spectrum, so that the restriction relation between power and bandwidth is solved, the bandwidth of the semiconductor optical amplifier is improved while high-power output is realized, and a gain basis is provided for realizing a wide tuning range.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a high power silicon-based III-V external cavity laser based on tapered waveguide gain.
In the figure: 101-semiconductor optical amplifier, 102-spot size converter, 103-1-first phase shifter, 103-2-second phase shifter, 104-1-first multimode interference coupler, 104-2-second multimode interference coupler, 105-1-first micro-ring filter, 105-2-second micro-ring filter, 106-directional coupler.
Detailed Description
To further clarify the objects, technical solutions and core advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and examples. The described embodiment is one embodiment of the present application and not all embodiments.
In the present application, when a specific component is described as being located between a first component and a second component, there may or may not be intervening components between the specific component and the first component or the second component; when it is described that a specific component is connected to other components, the specific component may be directly connected to the other components without having an intervening component or may be directly connected to the other components with having an intervening component.
According to the embodiment shown in fig. 1, the high-power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain comprises a semiconductor optical amplifier, a spot size converter, a first phase shifter, a second phase shifter, a first multimode interference coupler, a second multimode interference coupler, a first micro-ring filter, a second micro-ring filter and a directional coupler. The front end of the semiconductor optical amplifier is coupled with the front end of the spot size converter, the rear end of the spot size converter is connected with the front end of the first phase shifter, the rear end of the first phase shifter is connected with the front end of the first multimode interference coupler, two channels at the rear end of the first multimode interference coupler are respectively connected with the front end of the first micro-ring filter and the front end of the second micro-ring filter, the rear ends of the first micro-ring filter and the second micro-ring filter are connected with the front end of the directional coupler, two channels at the rear end of the directional coupler are respectively connected with the front end of the second phase shifter and one channel at the front end of the second multimode interference coupler, the rear end of the second phase shifter is connected with the other channel at the front end of the second multimode interference coupler, and the rear end of the multimode interference coupler is the output end of the laser. Except the semiconductor optical amplifier, other components jointly form a silicon-based external cavity chip.
In the embodiment shown in fig. 1, the semiconductor optical amplifier 101 has a structure of a rear end narrow waveguide and a front end tapered waveguide, and may also have a waveguide structure with high input current, such as a curved tapered waveguide, a wide waveguide, or a curved wide waveguide. The tapered wide waveguide part increases the waveguide area, improves the upper limit of input current, and further greatly improves the power, and the narrow ridge waveguide part can limit the mode of light, so that the light is output from the tapered waveguide part in a single transverse mode.
In the embodiment illustrated in fig. 1, the epitaxial structure of the semiconductor optical amplifier 101 is a III-V material, which is a direct bandgap semiconductor and has high light emitting efficiency. The epitaxial structure of the semiconductor optical amplifier 101 may also be made of II-VI materials.
In the embodiment illustrated in fig. 1, the active region of the semiconductor optical amplifier 101 adopts a chirped multiple quantum well structure, and a plurality of quantum well gain curves are overlapped to realize a smoother and wider spectrum, thereby improving the bandwidth of the semiconductor optical amplifier, providing a gain basis for realizing a wide tuning range, and the active region may also adopt a quantum wire structure or a quantum dot structure.
In the embodiment illustrated in fig. 1, the back end of the semiconductor optical amplifier 101 has a high reflectivity of 90% or more, and the front end has a high transmittance of 0.005% or less.
In the embodiment shown in fig. 1, the end face structure of the spot size converter 102 and the tapered end face structure of the semiconductor optical amplifier 101 have a high degree of mode matching, and the spot size converter gradually reduces the lateral size of the light spot by a non-linear gradual change structure until the spot size is completely matched with the external cavity waveguide. The FDTD software is utilized for simulation, so that under the condition of 1% mode loss, the length of the nonlinear spot size converter is about 30% shorter than that of the linear spot size converter, the size of a laser can be greatly reduced, and the system integration level is further improved.
In the embodiment shown in fig. 1, the first phase shifter 103-1 and the second phase shifter 103-2 are thermo-optic phase shifters, and may be electro-optic phase shifters.
In the embodiment shown in fig. 1, the micro-ring filters with slightly different radii form a filter system, and the transmission spectra of the two micro-rings form a vernier effect, so that a larger FSR is realized in the gain bandwidth, and therefore, single longitudinal mode laser can be realized. The FSRs of the two microrings are expressed as:
wherein R is 1 、R 2 Radius of the microring, n g λ is the wavelength, which is the group velocity. From the vernier effect, the extended FSR can be calculated by:
the transmission spectrum FSRs of the two micro-rings are slightly different, so that only aligned resonance peaks have low loss, and the FSR is expanded. The filter can also adopt other filters such as grating and the likeThe structure of the wave function.
In the embodiment shown in fig. 1, the first multimode interference coupler, the two micro-ring filters, and the waveguide connecting the first multimode interference coupler and the two micro-ring filters together form a Sagnac toroidal reflector, and other structures having a reflection function, such as bragg gratings, may also be used.
In the embodiment illustrated in fig. 1, the splitting ratio of the directional coupler 106 determines the ratio of the laser mirror output to the feedback. The directional coupler can also be replaced by a 2 × 2 multimode interferometer with the same effect and other adiabatic directional couplers with a 2 × 2 channel coupling function.
In the embodiment shown in fig. 1, except for the semiconductor optical amplifier 101, the rest of the components may be implemented by a material having a waveguide function, such as a silicon nitride material, a silicon material, or a silicon dioxide material.
In the embodiment illustrated in fig. 1, the semiconductor optical amplifier 101 is integrated with the silicon-based external cavity chip in an end-face coupling manner, the tapered front end of the tapered waveguide semiconductor optical amplifier outputs a flat single-mode optical spot (with a lateral dimension of about 120 microns), while the conventional narrow-ridge semiconductor optical amplifier outputs a very small single-mode optical spot (with a lateral dimension of about 5 microns). Because the large light spots are easier to align than the small light spots, the horizontal coupling tolerance of the tapered waveguide semiconductor optical amplifier is much larger than that of the traditional narrow-ridge semiconductor optical amplifier when the end face coupling is carried out, the production cost can be obviously reduced in specific implementation, and the production efficiency is improved.
In the embodiment shown in fig. 1, the laser only needs the semiconductor optical amplifier 101 to perform primary end-face coupling with the silicon-based external cavity chip, so that the packaging cost is low and the chip reliability is high.
In the embodiment illustrated in fig. 1, the semiconductor optical amplifier 101 is energized by electrical injection, and produces a laser output above a threshold current. Laser is coupled into a silicon-based external cavity chip through a spot coupler 102, then enters a first multimode interference coupler 104-1 through a first phase shifter 103-1, then enters a first micro-ring resonator 105-1 and a second micro-ring resonator 105-2 from two channels output by the first multimode interference coupler 104-1, then passes through output ends of the first micro-ring resonator 105-1 and the second micro-ring resonator 105-2, reaches a directional coupler 106, and is output to the second multimode interference coupler 104-2 from the other two ports of the directional coupler 106. The power coupling coefficient of the directional coupler determines the ratio of output to feedback. The semiconductor optical amplifier 101, the spot size coupler 102, the first multimode interference coupler 104-1, the first micro-ring resonator 105-1, the second micro-ring resonator 105-2 and the waveguide connecting the output ends of the first micro-ring resonator 105-1 and the second micro-ring resonator 105-2 together form a resonant cavity of the laser. The emergent light power is increased by the large current injection of the tapered waveguide semiconductor optical amplifier 101.
In the embodiment shown in fig. 1, the mode selection is realized by adjusting the phase shifter and the micro-ring filter to align the resonant wavelength of the fabry-perot cavity of the semiconductor optical amplifier with the resonant wavelength of the vernier effect of the micro-ring, and thus the laser output wavelength can be continuously adjustable.
In the embodiment shown in fig. 1, the phase shifter 103-2 located on one arm of the second multimode interference coupler 104-2 adjusts the phase to compensate the phase difference between the two arms of the second multimode interference coupler 104-2, so as to achieve coherent phase lengthening of the two-arm output and ensure maximization of the output power.
In the embodiment illustrated in fig. 1, the relationship among the three indexes of high power, narrow linewidth and wide tuning of the laser is decoupled, so that the external cavity laser has the performance of narrow linewidth and wide tuning while realizing high power output.
Example (b): the semiconductor optical amplifier adopts an InP-based chirped quantum well epitaxial structure, the bandwidth is about 100nm, and the central wavelength is about 1550nm. The waveguide rear end (straight waveguide portion) employed a length of 0.5mm and a width of 3 μm, the waveguide front end (tapered portion) employed a length of 1mm and a width linearly varying from 3 μm to 120 μm, and the semiconductor optical amplifier output power was about 1W. The spot size coupler is realized by adopting a silicon nitride waveguide material, the total length is 2mm, the width of the front end is 120 mu m, the width of the rear end is 1 mu m, and the nonlinear relation function of the width and the length of the silicon nitride waveguide is as follows: w (x) =0.00133 x (2000-x) 1.5 +1. The coupling loss of the semiconductor optical amplifier and the spot coupler is only 3dB through the end face coupling process.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (9)
1. A high-power silicon-based III-V family end-face coupling external cavity laser based on tapered waveguide gain comprises a tapered waveguide reflection type semiconductor optical amplifier and a silicon-based photonic external cavity chip, wherein a spot size converter and other external cavity devices are integrated on the silicon-based photonic external cavity chip, and the spot size converter is used for coupling the reflection type semiconductor optical amplifier and the other external cavity devices, and is characterized in that the rear end of the reflection type semiconductor optical amplifier is a narrow ridge waveguide to ensure the working state of a single transverse mode, and the end face has a reflectivity of more than 90%; the front end of the reflection-type semiconductor optical amplifier is a tapered waveguide or a wide waveguide, so that the saturation power and the heat dissipation efficiency are increased, high current is input, high power output is realized, and the end face reflectivity is less than or equal to 0.005%; the reflection-type semiconductor optical amplifier adopts III-V group materials or II-VI group materials, and the active region adopts a chirp quantum well structure, a quantum wire structure or a quantum dot structure; the spot size converter and the front end face of the reflection-type semiconductor optical amplifier have higher mode matching degree, the spot size converter gradually reduces the transverse size of a light spot through a nonlinear gradual change structure, and the other end of the spot size converter is matched with the rest external cavity devices, so that a flat single transverse mode light field with high output power is compressed to a single mode light field matched with the rest external cavity devices.
2. The high power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain of claim 1, wherein the mode spot converter further adopts a linear tapered waveguide, a multi-port waveguide, a trident waveguide, etc.
3. The tapered waveguide gain-based high power silicon-based III-V end-coupled external cavity laser according to claim 1 or 2, wherein the remaining external cavity devices comprise a first phase shifter (103-1), a second phase shifter (103-2), a first multi-mode interference coupler (104-1), a second multi-mode interference coupler (104-2), a first micro-ring filter (105-1), a second micro-ring filter (105-2) and a directional coupler (106);
the rear end of the spot size converter (102) is connected with the front end of the first phase shifter (103-1), the rear end of the first phase shifter (103-1) is connected with the front end of the first multimode interference coupler (104-1), two channels at the rear end of the first multimode interference coupler (104-1) are respectively connected with the front end of a first micro-ring filter (105-1) and the front end of a second micro-ring filter (105-2), the rear ends of the first micro-ring filter (105-1) and the second micro-ring filter (105-2) are respectively connected with the front end of the directional coupler (106), two channels at the rear end of the directional coupler (106) are respectively connected with one channel at the front end of the second phase shifter (103-2) and the front end of the second multimode interference coupler (104-2), and the rear end of the second phase shifter (103-2) is connected with the front end of the second multimode interference coupler (104-2), namely, the rear end of the second phase shifter (103-2) is the rear end of the second multimode interference coupler (104-2), namely the rear end of the second multimode interference coupler (104-2).
4. The high-power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain according to claim 3, wherein the first phase shifter (103-1) and the second phase shifter (103-2) adopt a thermo-optical phase shifter or an electro-optical phase shifter.
5. The high-power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain of claim 3, wherein the first micro-ring filter (105-1) and the second micro-ring filter (105-2) are two micro-ring structures with different radii, which constitute a vernier filter, and the filter can also adopt a grating structure or the like.
6. The high-power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain according to claim 3, wherein the first multimode interference coupler (104-1), the first micro-ring filter (105-1), the second micro-ring filter (105-2), the directional coupler (106) and the waveguide connected therebetween form a Sagnac ring reflector, and the reflector structure can also adopt Bragg grating and other structures.
7. The high-power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain according to claim 3, wherein the directional coupler (106) is a power output structure, and other forms of power output structures such as a Saganc ring, a Bragg grating, a 2 x 2 multimode interferometer and the like can also be adopted.
8. The high power silicon-based III-V end-coupled external cavity laser based on tapered waveguide gain according to any one of claims 1 to 7, wherein all components integrated on the silicon-based photonic external cavity chip are realized by optoelectronic waveguide materials such as silicon nitride material, silicon material or silicon dioxide material.
9. The high power silica-based III-V end-coupled external cavity laser based on tapered waveguide gain of any of claims 1-7, wherein the reflective semiconductor optical amplifier and the silica-based photonic external cavity chip are aligned and packaged together by end-coupling.
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