CN113937617B - Multi-wavelength laser - Google Patents

Multi-wavelength laser Download PDF

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Publication number
CN113937617B
CN113937617B CN202111183090.9A CN202111183090A CN113937617B CN 113937617 B CN113937617 B CN 113937617B CN 202111183090 A CN202111183090 A CN 202111183090A CN 113937617 B CN113937617 B CN 113937617B
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wavelength
array
ports
phase
wavelength laser
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CN113937617A (en
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陈亦凡
严亭
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Suzhou Yirui Optoelectronics Technology Co ltd
Yirui Optoelectronic Technology Anhui Co ltd
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Suzhou Yirui Optoelectronics Technology Co ltd
Yirui Optoelectronic Technology Anhui Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
    • G02B6/2938—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device for multiplexing or demultiplexing, i.e. combining or separating wavelengths, e.g. 1xN, NxM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
    • Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The embodiment of the invention discloses a multi-wavelength laser. The multi-wavelength laser comprises an array waveguide grating, a semiconductor optical amplifier array, a phase region array and a reflecting unit; the array waveguide grating comprises n multi-wavelength ports and 2m single-wavelength ports; the reflection unit is used for reflecting the output light of the multi-wavelength port back to the array waveguide grating; the semiconductor optical amplifier array comprises m semiconductor optical amplifiers, and the input end and the output end of each semiconductor optical amplifier are respectively coupled with two single-wavelength ports with spectrum passband coincident; the phase region array comprises m phase regions for modulating the optical phase in each optical loop to an integer multiple of 2 pi; wherein n and m are integers greater than 1. The embodiment of the invention provides a multi-wavelength laser which is easy to realize, can be controlled independently for each wavelength channel, and the wavelength of each channel can be determined by design and is output after wavelength division multiplexing; the requirements of the fields of optical communication, optical sensing and the like on the multi-wavelength light source are met.

Description

Multi-wavelength laser
Technical Field
The embodiment of the invention relates to a laser technology, in particular to a multi-wavelength laser.
Background
With the increasing bandwidth demands of various applications, wavelength Division Multiplexing (WDM) technology is commonly used in various optical communication, optical interconnection, optical sensing, and other systems. Conventional WDM systems require a separate high performance semiconductor laser for each wavelength, making the system complex and costly. The system can be greatly simplified and the cost can be reduced by replacing tens of semiconductor lasers in the system with a multi-wavelength light source, and the system is an attractive solution.
The current multi-wavelength laser scheme mainly comprises: (1) mode-locked fiber-based lasers; (2) A quantum dot and quantum wire multi-wavelength laser based on III-V semiconductor; (3) A multi-wavelength laser based on Arrayed Waveguide Grating (AWG) filtering.
The mode-locked fiber multi-wavelength laser generally uses a Semiconductor Optical Amplifier (SOA) or an erbium-doped fiber amplifier (EDFA) as a gain medium, and selects wavelengths by using a fiber grating or a fabry-perot filter. Due to the adoption of a plurality of discrete components, the device is huge in size and high in cost, and is not suitable for optical communication application sensitive to cost; group III-V semiconductor quantum dot-based or quantum multi-wavelength lasers typically suffer from non-uniformity in power and deviation from design values for multiple wavelengths, which cannot be tuned independently, and low optical power for each wavelength, resulting in a gap in overall performance and application requirements.
The existing multi-wavelength laser based on AWG filtering comprises too many discrete elements, and has a complex structure and a large volume; moreover, the large size of the AWG device, particularly the large number of channels DWDM-AWG, results in a high overall cost of the device and a lower process yield with higher integration. Therefore, there is a need for a multi-wavelength laser solution that can be made compact, low cost, and simultaneously tuned independently for each wavelength, and that can meet the needs of many applications in the system.
Disclosure of Invention
The embodiment of the invention provides a multi-wavelength laser which is easy to realize, can be controlled independently for each wavelength channel, and the wavelength of each channel can be determined by design and is output after wavelength division multiplexing; the multi-wavelength laser device solves the requirements of the fields of optical communication, optical sensing and the like on a multi-wavelength light source.
The embodiment of the invention provides a multi-wavelength laser, which comprises an array waveguide grating, a semiconductor optical amplifier array, a phase area array and a reflecting unit, wherein the array waveguide grating is arranged on the semiconductor optical amplifier array;
the array waveguide grating comprises n multi-wavelength ports and 2m single-wavelength ports, and when light with multiple wavelengths is input from the multi-wavelength ports, each single-wavelength port outputs light with one wavelength; when light is input from two multi-wavelength ports, the array waveguide grating comprises m paired single-wavelength ports with spectrum pass bands coincident;
the reflection surface of the reflection unit is positioned at one side of one multi-wavelength port, and the reflection unit is used for reflecting the output light of the multi-wavelength port back to the arrayed waveguide grating;
the semiconductor optical amplifier array comprises m semiconductor optical amplifiers, and the input end and the output end of each semiconductor optical amplifier are respectively coupled with two single wavelength ports with spectrum passband coincident;
the phase region array comprises m phase regions, wherein the phase regions are positioned on an optical path between the two single-wavelength ports with the spectrum passband coincident and are used for modulating the optical phase in each optical loop into integer multiples of 2 pi;
wherein n and m are integers greater than 1.
Optionally, the optical fiber optical filter further comprises a comb filter, wherein an input end of the comb filter is coupled with the multi-wavelength port, the comb filter comprises a plurality of transmission channels, the transmission channels are matched with a spectrum passband of the single-wavelength port, and the bandwidth of the transmission channels is smaller than that of the spectrum passband.
Optionally, the comb filter includes a phase shift structure for adjusting a center wavelength of the transmission channel.
Optionally, the comb filter comprises a micro-ring resonator, a sampled Bragg reflector or an optical etalon.
Optionally, the arrayed waveguide grating, the reflection unit and the comb filter are integrated on the same chip, or
The comb filter and the semiconductor optical amplifier array are integrated on the same chip.
Optionally, coupling end surfaces of at least two of the arrayed waveguide grating, the comb filter, the phase region array and the semiconductor optical amplifier array are provided with an antireflection film.
Optionally, a lens is disposed between coupling end surfaces of at least two of the arrayed waveguide grating, the comb filter, the phase region array and the semiconductor optical amplifier array.
Alternatively, the phase region array and the arrayed waveguide grating are integrated on the same chip, or
The array of phase regions and the array of semiconductor optical amplifiers are integrated on the same chip.
Optionally, the reflecting unit includes a Sagnac mirror or a reflection enhancing film disposed on an end face of the multi-wavelength port.
Optionally, the multi-wavelength laser further comprises an isolator arranged at the output end of the multi-wavelength laser.
Optionally, a mirror is further included for coupling light of the semiconductor optical amplifier into an optical loop.
Optionally, the arrayed waveguide grating is implemented by a silicon nitride waveguide, a silicon dioxide waveguide, or a silicon waveguide.
The multi-wavelength laser provided by the embodiment of the invention comprises an array waveguide grating, a semiconductor optical amplifier array, a phase region array and a reflecting unit; the array waveguide grating comprises n multi-wavelength ports and 2m single-wavelength ports, and when light with multiple wavelengths is input from the multi-wavelength ports, each single-wavelength port outputs light with one wavelength; when light is input from two multi-wavelength ports, the array waveguide grating comprises m pairs of single-wavelength ports with spectrum passbands coincident; the reflection surface of the reflection unit is positioned at one side of one multi-wavelength port, and the reflection unit is used for reflecting the output light of the multi-wavelength port back to the array waveguide grating; the semiconductor optical amplifier array comprises m semiconductor optical amplifiers, and the input end and the output end of each semiconductor optical amplifier are respectively coupled with two single-wavelength ports with spectrum passband coincident; the phase region array comprises m phase regions, wherein the phase regions are positioned on an optical path between two single-wavelength ports with overlapped spectrum pass bands and are used for modulating the optical phase of each optical loop into an integer multiple of 2 pi; wherein n and m are integers greater than 1. The optical loop of the resonant cavity is formed by the reflecting unit, the multi-wavelength port of the array waveguide grating, the single-wavelength port with the overlapped paired spectrum pass bands, the corresponding phase region and the semiconductor optical amplifier, and the photoelectric conversion and optical gain functions are realized by the semiconductor optical amplifier array; adjusting the optical phase on each wavelength loop through the phase region to enable the loop optical phase to meet the resonance condition (namely, integral multiple of 2 pi); the reflecting surface of the reflecting unit is used as one end surface of the resonant cavity, so that the wide-spectrum light reflecting function is realized; the wavelength division multiplexing and demultiplexing functions are realized through the arrayed waveguide grating, light with multiple wavelengths is output from the multi-wavelength port of the reflection unit, and the requirements of the fields of optical communication, optical sensing and the like on the multi-wavelength light source are met.
Drawings
FIG. 1 is a schematic diagram of an arrayed waveguide grating;
FIG. 2 is a schematic diagram of a light source I 1 Schematic of the transmission spectra of the ports to the respective output ports;
FIG. 3 is a schematic diagram of a light source I 2 Schematic of the transmission spectra of the ports to the respective output ports;
fig. 4 is a schematic structural diagram of a multi-wavelength laser according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another multi-wavelength laser according to an embodiment of the present invention;
fig. 6 is a schematic spectrum diagram of a comb filter according to an embodiment of the present invention;
fig. 7 to fig. 9 are schematic structural diagrams of still another multi-wavelength laser according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a structure of another multi-wavelength laser according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a structure of another multi-wavelength laser according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of a structure of another multi-wavelength laser according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure of another multi-wavelength laser according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of another multi-wavelength laser according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It should be noted that, the terms "upper", "lower", "left", "right", and the like in the embodiments of the present invention are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In addition, in the context, it will also be understood that when an element is referred to as being formed "on" or "under" another element, it can be directly formed "on" or "under" the other element or be indirectly formed "on" or "under" the other element through intervening elements. The terms "first," "second," and the like, are used for descriptive purposes only and not for any order, quantity, or importance, but rather are used to distinguish between different components. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Fig. 1 is a schematic diagram of an arrayed waveguide grating. The AWG is illustratively designed as a 2-in N-out (N is an integer greater than 2) structure with ports defined as I respectively 1 、I 2 、O 1 、O 2 、O 3 、O 4 、O 5 、O 6 … … (there may be more ports on the right, not shown for simplicity). According to the AWG working principle, the AWG can be designed as: light source I 1 O when port is input 1 ～O 6 Optical signals (abbreviated as different wavelengths) of different spectral channels, denoted as lambda 1 ～λ 6 The method comprises the steps of carrying out a first treatment on the surface of the When light is emitted from I 2 Optical wavelength lambda when port is input 1 ～λ 6 Respectively output at adjacent output ports. Since the optical path is reversible, the inputs and outputs can be reversed here. FIG. 2 is a schematic diagram of a light source I 1 FIG. 3 is a schematic diagram of the transmission spectra of light from I to each output port 2 Schematic of the transmission spectra of the ports to the respective output ports. Visible I 1 -O 1 (representing the sequence from I 1 To O 1 Or from O 1 To I 1 Similar to the following) and I 2 -O 2 Is coincident; similarly, I 1 -O 3 And I 2 -O 4 Is the transmission spectrum passband coincidence of I 1 -O 5 And I 2 -O 6 The transmission spectrum pass bands of (a) coincide, more outputsThe outlet ports may be analogized in turn.
Thus, O is 1 And O 2 I constructed by connecting light paths 1 -O 1 -O 2 -I 2 Is of transmission wavelength lambda 1 The method comprises the steps of carrying out a first treatment on the surface of the O is added with 3 And O 4 I constructed by connecting light paths 1 -O 3 -O 4 -I 2 Is of transmission wavelength lambda 3 The method comprises the steps of carrying out a first treatment on the surface of the O is added with 5 And O 6 I constructed by connecting light paths 1 -O 5 -O 6 -I 2 Is of transmission wavelength lambda 5 The method comprises the steps of carrying out a first treatment on the surface of the More channels can be analogized in turn. Lambda in the figure 1 And lambda (lambda) 1 'refers to the same wavelength and the symbol' "is intended to correspond to the input port of the AWG.
By utilizing the above properties of the AWG, embodiments of the present invention provide a multi-wavelength laser. Fig. 4 is a schematic structural diagram of a multi-wavelength laser according to an embodiment of the present invention, and referring to fig. 4, the multi-wavelength laser includes an arrayed waveguide grating AWG10, a semiconductor optical amplifier SOA array 20, a phase area array 30, and a reflection unit 40; the AWG10 includes n multi-wavelength ports and 2m single-wavelength ports, where n and m are integers greater than 1 (n=2, m=3 is illustrated in the present embodiment, and is not a limitation of the embodiment of the present invention). When light with multiple wavelengths is input from the multi-wavelength port, each single-wavelength port outputs light with one wavelength, namely, the wavelength division multiplexing function is realized; when light is input from two multi-wavelength ports, the arrayed waveguide grating comprises m pairs of single-wavelength ports with overlapped spectral passbands (refer to fig. 1); the reflecting surface of the reflecting unit 40 is located at one side of one multi-wavelength port, and the reflecting unit 40 is used for reflecting the output light of the multi-wavelength port back to the AWG10; the SOA array 20 comprises m SOAs 21, and an input end and an output end of each SOA21 are respectively coupled with two single-wavelength ports overlapped with a spectrum passband; the phase region array 30 comprises m phase regions 31, the phase regions 31 being located on the optical path between two single wavelength ports with coincident spectral passbands for phase modulating the light in each optical loop by an integer multiple of 2 pi.
Wherein the reflecting surface of the reflecting unit 40, which serves as one end surface of the resonant cavity, has a broad spectrum reflecting function, and its reflection spectrum is to cover each wavelength in all the single wavelength ports. The AWG10 and the multi-wavelength port corresponding to the reflection unit 40, the two single-wavelength ports corresponding to the spectrum passband overlap, the SOA21 and the phase region 31 together form a resonant cavity, the SOA21 realizes the functions of photoelectric conversion and optical gain, and the phase region 31 is used for adjusting the optical phase in the resonant cavity so that the optical phase of the loop meets the writing condition (namely, the integral multiple of 2 pi). In practical implementation, the phase region 31 can adjust the phase of light through a thermal control or electric control mechanism, and in practical implementation, the phase region can be selected according to practical situations. In one embodiment, for example, control of the individual wavelengths of the laser may be achieved by adjusting the drive currents of the individual SOAs 21 and the individual phase regions 31.
In particular implementations, the AWG10 is a passive device that can be integrated on a chip of a high performance, low cost, corresponding material, such as an AWG implemented with silicon nitride waveguides, silica waveguides, or silicon waveguides. SOA is an active device that forms optical gain and needs to be implemented in a high cost group III-V material system. According to the technical scheme provided by the embodiment of the invention, the two are respectively realized on the respective most suitable material systems, and the compact, high-performance and low-cost multi-wavelength laser can be realized in a hybrid integration mode, so that the method is the scheme which most meets the comprehensive requirements of application.
According to the technical scheme, an optical loop of a resonant cavity is formed through the reflecting unit, the multi-wavelength ports of the array waveguide grating, the single-wavelength ports with the overlapped paired spectrum passbands, the corresponding phase areas and the semiconductor optical amplifier, and the photoelectric conversion and optical gain functions are realized through the semiconductor optical amplifier array; adjusting the optical phase on each wavelength loop through the phase region to enable the loop optical phase to meet the resonance condition (namely, integral multiple of 2 pi); the reflecting surface of the reflecting unit is used as one end surface of the resonant cavity, so that the wide-spectrum light reflecting function is realized; the wavelength division multiplexing and demultiplexing functions are realized through the arrayed waveguide grating, light with multiple wavelengths is output from the multi-wavelength port of the reflection unit, and the requirements of the fields of optical communication, optical sensing and the like on the multi-wavelength light source are met.
Based on the technical scheme, the passband of the AWG is wider in general, the single longitudinal mode condition can not be met, and a comb filter is required to be added to further select a mode from the passband of the AWG. Fig. 5 is a schematic structural diagram of another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 5, the multi-wavelength laser may optionally further include a comb filter 50, an input end of the comb filter 50 is coupled to the multi-wavelength port, the comb filter 50 includes a plurality of transmission channels, the transmission channels are matched to a spectral passband of the single-wavelength port, and a bandwidth of the transmission channels is smaller than a bandwidth of the spectral passband.
It will be appreciated that the comb filter 50 and the reflection unit 40 are coupled to different multi-wavelength ports, such as the I of the AWG shown in FIG. 1 1 Port is coupled to the reflecting unit 40, I 2 The ports are coupled to a comb filter 50. Fig. 6 is a schematic spectrum diagram of a comb filter according to an embodiment of the present invention. Referring to fig. 6, in this embodiment, the reflection spectrum of the comb filter needs to be aligned with the transmission spectrum of the optical circuit, and in fig. 6, the solid line represents the transmission spectrum of the AWG circuit without the SOA and without the comb filter, and the dotted line represents the reflection spectrum of the comb filter. And the comb filter has the property of band-pass reflection and serves as the other reflecting end face of the laser resonant cavity. In practice, it may be necessary to adjust the reflection wavelength of the comb filter to align with the AWG passband, optionally the comb filter includes a phase shifting structure for adjusting the center wavelength of the transmission channel. For example, a thermal or electrical phase shifting structure may be involved to achieve adjustment of the signal wavelength in each channel of the comb filter to achieve matching with the AWG.
The multi-wavelength laser provided by the embodiments of the present invention is not limited to the type of comb filter, and in some embodiments, the comb filter may include a micro-ring resonator, a sampled Bragg reflector, or an optical etalon, for example.
Fig. 7 to fig. 9 are schematic structural diagrams of another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 7, in this embodiment, the comb filter 50 is implemented by a micro-ring resonator, the micro-ring resonator is integrated on the micro-ring filter chip 100, the SOA array 20 and the phase region array 30 are integrated on the SOA array chip 200, and the upper edge of the AWG chip 300 is coated with a high reflection film 301 to perform a wide-spectrum mirror function. Optionally, at least two coupling end surfaces of the arrayed waveguide grating, the comb filter, the phase region array and the semiconductor optical amplifier array are provided with an antireflection film. For example, in the present embodiment, the left and right sides of the AWG chip 300, the left side of the SOA array chip 200, and the right side of the micro-ring filter chip 100 are coated with the anti-reflection film 302 to reduce loop loss. The ring length of the micro-ring needs to be finely designed to match the reflection spectrum center wavelength interval and the AWG passband interval, the coupling coefficients of the circular arc waveguide and the straight waveguide in the micro-ring need to be designed according to the required reflectivity and passband width, the coupling coefficients of the coupler in the micro-ring filter chip 100 need to be finely designed to enable part of the optical signal to be output from one port of the coupler, and in addition, a thermal control or electric control phase shift structure can be designed for the micro-ring so as to adjust the reflection wavelength thereof to be aligned with the AWG passband. In other embodiments, the optical input/output ports of the individual chips may employ a mode-spot-transforming structure to maximize optical coupling efficiency with respect to each other.
Referring to fig. 8, in this embodiment, the comb filter 50 is implemented by a sampled grating distributed bragg reflector (Sampled Grating Distributed Bragg Reflector, abbreviated as SGDBR), and the other portions are the same as in fig. 7. Parameters such as grating period, grating coupling coefficient, sampling period, sampling number, sampling duty ratio and the like of the SGDBR are designed to realize the required reflection spectrum. Similarly, the thermally or electrically controlled refractive index adjustment structure may be designed to align its reflected wavelength with the AWG passband.
Referring to fig. 9, in this embodiment, the comb filter 50 is implemented by an optical Etalon (metalon), and the other portions are the same as those in fig. 7. The dielectric, thickness of the metalon is designed such that its free spectral range (Free Spectral Range, FSR for short) is the same as the passband spacing of the loop shown in FIG. 6, and the metalon film is designed to achieve the desired transmittance.
In the embodiments of fig. 7-9, the reflective element is implemented by providing a highly reflective film (anti-reflective film) on the end face of the AWG chip, and in another embodiment, alternatively, the reflective element may be implemented by a Sagnac mirror. Fig. 10 is a schematic structural diagram of still another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 10, in the present embodiment, the reflection unit is implemented by a Sagnac mirror a integrated on a micro-loop filter chip 100, and its reflectivity can be implemented by adjusting the coupling coefficient of a directional coupler in the Sagnac mirror a. In addition, the topology of the micro-ring filter waveguide circuit is different from that of fig. 7, and the same reflection spectrum as that of the micro-ring filter in fig. 7 can be achieved by designing the reflectivity of the Sagnac mirror b. Since the Sagnac mirror a performs the function of a reflecting unit, the input waveguide loop of the AWG chip is different from that of fig. 7, and does not need to be coated with a high-reflectivity end surface film. The other structure is the same as fig. 7.
The embodiment of the invention does not limit the integration mode of each device, and optionally, the array waveguide grating, the reflecting unit and the comb filter are integrated on the same chip, or the comb filter and the semiconductor optical amplifier array are integrated on the same chip.
Fig. 11 is a schematic structural diagram of another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 11, in this embodiment, the AWG chip is monolithically integrated with the micro-ring filter, the Sagnac mirror. Fig. 12 is a schematic structural diagram of another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 12, in this embodiment, the micro-ring filter and the SOA array chip are implemented on the same chip. By adjusting the waveguide loop topology of the AWG chip such that its input and output ends are on the same side of the chip (except for the one requiring high reflectivity), the multi-wavelength laser can be implemented with only two chips. For the waveguide and cladding materials of the micro-ring filter at this time, parameters such as the ring length, the bending radius, the coupling coefficient and the like of the micro-ring filter are adjusted by adopting a method similar to that in fig. 7 to obtain a required comb-shaped filtering spectrum.
In another embodiment, alternatively, the phase area array and the arrayed waveguide grating may be integrated on the same chip, or the phase area array and the semiconductor optical amplifier array may be integrated on the same chip, and the implementation may be designed according to practical situations.
In order to improve the coupling efficiency between the chips, a lens is optionally disposed between the coupling end surfaces of at least two of the arrayed waveguide grating, the comb filter, the phase region array and the semiconductor optical amplifier array. To reduce the echo effect, the multi-wavelength laser further comprises an isolator arranged at the output of the multi-wavelength laser.
Fig. 13 is a schematic structural diagram of still another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 13, in the present embodiment, a lens 60 is added between chips to improve the coupling efficiency between chips, and an isolator 70 is added to the output end of the laser to reduce the influence of the echo optical signal on the laser, based on the structure shown in fig. 7.
In the above embodiment, the SOA array chip 200 is provided with a U-shaped curved waveguide, and in another embodiment, a fiber loop may be constructed by coupling a mirror and a chip waveguide without providing a U-shaped curved waveguide. Fig. 14 is a schematic structural diagram of another multi-wavelength laser according to an embodiment of the present invention. Referring to fig. 14, the multi-wavelength laser optionally further comprises a mirror 80, the mirror 80 being used to couple light of the SOA21 into the optical loop.
It should be noted that there are many, even countless, variations in chip loop topology, output ports of AWG, values of reflectivity, highly reflective or highly transmissive film systems plated on the chip end faces, implementation of lenses, mirrors, implementation of comb filters, methods of optical coupling between chips, and that AWG chips can be provided with many more multiple wavelength ports and single wavelength ports, these different conditions can be countless combinations, just to list a few representative embodiments, and other combinations between structures are within the scope of protection.
The embodiment of the invention provides a multi-wavelength laser scheme which can achieve high performance, small size and low cost, and can practically meet the comprehensive requirements of system applications such as communication and the like.
The high performance is reflected in that the scheme adopts an SOA array, so that on one hand, each wavelength of the laser has enough high optical gain, namely enough high optical power; on the other hand, each wavelength can be independently tuned, so that each wavelength meets the standard specification and the power of each wavelength is uniform. In addition, the most suitable material system of the passive optical device is also beneficial to realizing high performance such as low loss, high multi-wavelength uniformity and the like.
The multi-wavelength laser is small in size, and the multi-wavelength laser can be realized by using at least two chips. Compared with the optical fiber laser, the volume of the optical fiber laser is greatly reduced, and compared with the monolithic integrated multi-wavelength laser, the optical fiber laser has no more advantages.
The cost is low, the scheme can respectively select the passive devices with larger size and the SOA arrays with smaller size into different material systems, and the passive devices such as AWG and the like are arranged on SiO 2 Or SiN material system can greatly reduce the total cost of the device. This is critical for cost-sensitive optical communication, optical interconnect applications.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (12)

1. The multi-wavelength laser is characterized by comprising an array waveguide grating, a semiconductor optical amplifier array, a phase area array and a reflecting unit;
the array waveguide grating comprises n multi-wavelength ports and 2m single-wavelength ports, and when light with multiple wavelengths is input from the multi-wavelength ports, each single-wavelength port outputs light with one wavelength; when light is input from two multi-wavelength ports, the array waveguide grating comprises m paired single-wavelength ports with spectrum pass bands coincident;
the reflection surface of the reflection unit is positioned at one side of one multi-wavelength port, and the reflection unit is used for reflecting the output light of the multi-wavelength port back to the arrayed waveguide grating;
the semiconductor optical amplifier array comprises m semiconductor optical amplifiers, and the input end and the output end of each semiconductor optical amplifier are respectively coupled with two single wavelength ports with spectrum passband coincident;
the phase region array comprises m phase regions, wherein the phase regions are positioned on an optical path between the two single-wavelength ports with the spectrum passband coincident and are used for modulating the optical phase in each optical loop into integer multiples of 2 pi;
wherein n and m are integers greater than 1.
2. The multi-wavelength laser of claim 1, further comprising a comb filter having an input coupled to the multi-wavelength port, the comb filter comprising a plurality of transmission channels, the transmission channels matching a spectral passband of the single wavelength port, and a bandwidth of the transmission channels being less than a bandwidth of the spectral passband.
3. The multi-wavelength laser of claim 2, wherein the comb filter includes a phase shifting structure for adjusting a center wavelength of the transmission channel.
4. The multi-wavelength laser of claim 2, wherein the comb filter comprises a micro-ring resonator, a sampled bragg reflector, or an optical etalon.
5. The multi-wavelength laser of claim 2, wherein the arrayed waveguide grating, the reflection unit and the comb filter are integrated on the same chip, or
The comb filter and the semiconductor optical amplifier array are integrated on the same chip.
6. The multi-wavelength laser of claim 2, wherein coupling end faces of at least two of the arrayed waveguide grating, the comb filter, the phase-section array, and the semiconductor optical amplifier array are provided with an antireflection film.
7. The multi-wavelength laser of claim 2, wherein a lens is disposed between coupling end faces of at least two of the arrayed waveguide grating, the comb filter, the phase-section array, and the semiconductor optical amplifier array.
8. The multi-wavelength laser of claim 1, wherein the array of phase regions and the arrayed waveguide grating are integrated on the same chip, or
The array of phase regions and the array of semiconductor optical amplifiers are integrated on the same chip.
9. The multi-wavelength laser of claim 1, wherein the reflecting unit comprises a Sagnac mirror or a reflection enhancing film disposed at an end face of the multi-wavelength port.
10. The multi-wavelength laser of claim 1, further comprising an output and an isolator disposed at the output of the multi-wavelength laser.
11. The multi-wavelength laser of claim 1, further comprising a mirror for coupling light of the semiconductor optical amplifier into an optical loop.
12. The multi-wavelength laser of claim 1, wherein the arrayed waveguide grating is implemented by a silicon nitride waveguide, a silicon dioxide waveguide, or a silicon waveguide.
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