CN115739165B - W18o49-w2n异质结构纳米片/n掺杂c的制备及其光催化应用 - Google Patents
W18o49-w2n异质结构纳米片/n掺杂c的制备及其光催化应用 Download PDFInfo
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Abstract
本发明涉及W18O49‑W2N异质结构纳米片/N掺杂C的制备及其光催化应用，具体的说是将WO3纳米片，三(羟甲基)氨基甲烷，盐酸多巴胺，与三聚氰胺研磨热反应，得到W18O49‑W2N异质结构纳米片/N掺杂C；该W18O49‑W2N异质结构纳米片/N掺杂C在光催化反应中的应用。
Description
技术领域
本发明涉及W18O49-W2N异质结构纳米片/N掺杂C的制备及其光催化应用，属于材料的制备和应用领域。
背景技术
有机染料是人类社会不可或缺的生活用品，但其产生的染料废水困扰着人们的生活。催化降解有机污染物被认为是解决水污染问题的重要途径。光催化技术可以利用低密度的太阳能将有机污染物有效转变为无污染的物质。虽然光催化技术已经开展了多年，但氧化钨体系光催化效率较低。改变光生电子效率，提高氧化钨基材料光催化活性成为人们研究的热点。
构建异质结构、形成缺陷结构、制备复合材料等手段可以调节半导体的带隙，提供更多的活性位点，进而提高光催化效率。例如：Inagaki等将(NH4)10W12O41·5H2O和PVA混合，在Ar气氛下高温焙烧1h得到碳包覆的W18O49，将其光催化降解DMSO，发现产生的OH·能够高效催化该反应(Applied Catalysis B:Environmental,2008,78,202-209)。Cao等将WCl6分散到乙醇中，160℃水热24h，合成了花状WO3/W18O49结构，将其光催化浓度为10mg/L的甲基橙溶液，发现WO3/W18O49比W18O49具有更高的光催化活性(Journal of Alloys and Compounds,2017,690,239-248)。Cheng等将WCl6分散到乙醇中，加入g-C3N4，在200℃水热12h得到了g-C3N4-W18O49异质结构，在光催化CO2反应中，比W18O49具有更高的活性(Inorganic ChemistryCommunications,2021,132,108814)。Xi等将WCl6与乙醇混合，然后在180℃水热24h，得到了W18O49纳米线，将其应用于光催化异丙醇脱水成丙烯，具有较高的活性(Journal ofMaterials Chemistry A,2013,1,6125-6129)。结果表明构建异质结构可以有效改变催化剂的电子结构，提高光催化活性。
光催化降解染料废水可以提高人类的生活环境，构建W18O49-W2N异质结构纳米片/N掺杂C光催化剂，实现污水的净化具有重要的实践意义。
发明内容：
本发明旨在提供W18O49-W2N异质结构纳米片/N掺杂C的制备及其光催化应用。
基于上述目的，本发明所涉及的技术方案如下：
(1)W18O49-W2N异质结构纳米片/N掺杂C的制备：将12mg-42mg的m-WO3纳米片(JCPDS#43-1035)，90-145mg三(羟甲基)氨基甲烷，32-55mg盐酸多巴胺，分散到60mL乙醇和60mL水中，干燥后，取40-60mg，与80-170mg三聚氰胺研磨混合，在惰性氛围中700-800℃加热0.5-2h，得到N掺杂C包覆封装的W18O49-W2N异质结构纳米片，即W18O49-W2N异质结构纳米片/N掺杂C。上述的制备方法，所述W18O49-W2N异质结构纳米片/N掺杂C中W18O49晶相归属于标准卡片JCPDS#05-0392，W2N晶相归属于标准卡片JCPDS#25-1257。
(2)一种上述的制备方法制备得到的W18O49-W2N异质结构纳米片/N掺杂C在光催化反应中的应用；在甲基橙浓度为0.1-1mg/L时光催化反应3-7h，脱除率为100％。
本发明具有如下优点：
1)开发了W18O49-W2N异质结构纳米片/N掺杂C的新合成路径。
2)W18O49-W2N异质结构纳米片/N掺杂C在光催化甲基橙溶液中具有较好的性能。
附图说明：
图1是W18O49-W2N异质结构纳米片/N掺杂C的XRD表征结果。
具体实施方式
下列实施例用来进一步说明本发明，但不因此而限制本发明。
实施例1
W18O49-W2N异质结构纳米片/N掺杂C的制备及其光催化应用：将12mg的m-WO3纳米片(JCPDS#43-1035)，90mg三(羟甲基)氨基甲烷，32mg盐酸多巴胺，分散到60mL乙醇和60mL水中，干燥后，取40mg，与80mg三聚氰胺研磨混合，在惰性氛围中700℃加热0.5h，得到N掺杂C包覆封装的W18O49-W2N异质结构纳米片，即W18O49-W2N异质结构纳米片/N掺杂C。上述的制备方法，所述W18O49-W2N异质结构纳米片/N掺杂C中W18O49晶相归属于标准卡片JCPDS#05-0392，W2N晶相归属于标准卡片JCPDS#25-1257。将制备得到的W18O49-W2N异质结构纳米片/N掺杂C在光催化反应中的应用；在甲基橙浓度为0.1mg/L时光催化反应3h，脱除率为100％。
实施例2
W18O49-W2N异质结构纳米片/N掺杂C的制备及其光催化应用：将42mg的m-WO3纳米片(JCPDS#43-1035)，145mg三(羟甲基)氨基甲烷，55mg盐酸多巴胺，分散到60mL乙醇和60mL水中，干燥后，取60mg，与170mg三聚氰胺研磨混合，在惰性氛围中800℃加热2h，得到N掺杂C包覆封装的W18O49-W2N异质结构纳米片，即W18O49-W2N异质结构纳米片/N掺杂C。上述的制备方法，所述W18O49-W2N异质结构纳米片/N掺杂C中W18O49晶相归属于标准卡片JCPDS#05-0392，W2N晶相归属于标准卡片JCPDS#25-1257。将制备得到的W18O49-W2N异质结构纳米片/N掺杂C在光催化反应中的应用；在甲基橙浓度为1mg/L时光催化反应7h，脱除率为100％。
实施例3
W18O49-W2N异质结构纳米片/N掺杂C的制备及其光催化应用：将12mg的m-WO3纳米片(JCPDS#43-1035)，145mg三(羟甲基)氨基甲烷，32mg盐酸多巴胺，分散到60mL乙醇和60mL水中，干燥后，取60mg，与170mg三聚氰胺研磨混合，在惰性氛围中750℃加热1h，得到N掺杂C包覆封装的W18O49-W2N异质结构纳米片，即W18O49-W2N异质结构纳米片/N掺杂C。上述的制备方法，所述W18O49-W2N异质结构纳米片/N掺杂C中W18O49晶相归属于标准卡片JCPDS#05-0392，W2N晶相归属于标准卡片JCPDS#25-1257。将制备得到的W18O49-W2N异质结构纳米片/N掺杂C在光催化反应中的应用；在甲基橙浓度为0.1mg/L时光催化反应7h，脱除率为100％。
Claims (5)
1.W18O49-W2N异质结构纳米片/N掺杂C的制备方法，其特征在于，包括以下步骤：
将m-WO3纳米片，三（羟甲基）氨基甲烷，盐酸多巴胺，分散到乙醇和水中，干燥后，与三聚氰胺研磨混合，在惰性氛围中加热700-800 oC，得到N掺杂C包覆封装的W18O49-W2N异质结构纳米片，即W18O49-W2N异质结构纳米片/N掺杂C。
2.如权利要求1所述的制备方法，其特征在于，所述m-WO3纳米片质量为12 mg-42 mg，m-WO3纳米片晶相归属于标准卡片JCPDS#43-1035。
3.如权利要求1所述的制备方法，其特征在于，90-145 mg 三（羟甲基）氨基甲烷，32-55mg盐酸多巴胺，分散到60 mL乙醇和60 mL水中，干燥后，取40-60 mg，与80-170 mg三聚氰胺研磨混合，在惰性氛围中700-800 oC加热0.5-2 h。
4.如权利要求1所述的制备方法，其特征在于，所述W18O49-W2N异质结构纳米片/N掺杂C中N掺杂C包覆封装的W18O49-W2N异质结构纳米片，W18O49晶相归属于标准卡片 JCPDS#05-0392，W2N晶相归属于标准卡片 JCPDS#25-1257。
5.一种由权利要求1-4任一项所述的制备方法制备得到的W18O49-W2N异质结构纳米片/N掺杂C在光催化反应中的应用，在甲基橙浓度为0.1-1 mg/L时光催化反应3-7 h，脱除率为100％。
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