CN115733465A - Surface acoustic wave filter manufacturing method and processing device, and duplexer processing method - Google Patents
Surface acoustic wave filter manufacturing method and processing device, and duplexer processing method Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a method for manufacturing a surface acoustic wave filter with a temperature compensation structure, which comprises the following steps: providing a piezoelectric substrate, and forming a first electrode film on the piezoelectric substrate; manufacturing of SiO with temperature compensation structure 2 A film in which a patterned structure is formed on a surface of the first electrode film; and carrying out planarization treatment on the patterned structure, wherein the planarization treatment comprises setting a first planarization friction force value, a second planarization friction force value and a third planarization friction force value, grinding the patterned structure, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, and carrying out two-step polishing to generate the surface acoustic wave filter with the temperature compensation structure. According to the method provided by the invention, the surface of the whole filter tends to be flattened in the processing process of the temperature compensation type surface acoustic wave filter, so that the performance of the whole device is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method and a processing device of a surface acoustic wave filter with a temperature compensation structure and a processing method of a duplexer.
Background
For the processing of the surface acoustic wave filter, generally, a piezoelectric substrate is manufactured, an electrode film is deposited on the piezoelectric substrate, and then a temperature compensation structure is deposited on the electrode film, however, in the deposition process, for example, a vapor deposition process is used in the manufacturing of the temperature compensation structure, so that the temperature compensation structure is deposited on the electrode film, and under the influence of the height fluctuation of the electrode film, the surface of the temperature compensation structure is always in an uneven state, thereby resulting in the uneven surface of the device of the whole filter and causing the deterioration of the frequency characteristic of the device. In addition, in other processing processes, irregular protrusions are generated on the surface of the filter due to different pressures applied at different stages, so that the performance of the whole filter device is affected, and the whole device has a tendency to deteriorate, so that the surface planarization of the device is an urgent problem to be solved at the present stage.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a manufacturing method and processing equipment of a surface acoustic wave filter with a temperature compensation structure, which are used for solving the problem that the performance of the whole filter is influenced because irregular bulges are generated on the surface of the filter due to excessive or non-complete grinding and other operations in the chemical grinding process, and the frequency characteristic of the whole device is improved.
The purpose of the invention is mainly realized by the following technical scheme:
the invention provides a method for manufacturing a surface acoustic wave filter with a temperature compensation structure, which is characterized by comprising the following steps: step S1, providing a piezoelectric substrate, and forming a first electrode film on the piezoelectric substrate; s2, manufacturing a temperature compensation structure by adopting a vapor deposition method, wherein the temperature compensation structure is SiO 2 A film at the temperature compensation structure away from theForming a patterned structure on the surface of the first electrode film; and S3, carrying out planarization treatment on the patterned structure by adopting a chemical mechanical polishing method, wherein the planarization treatment comprises setting a planarization friction value, polishing the patterned structure by adopting a preset polishing module, simultaneously monitoring a second friction force between the polishing module and the patterned structure in real time, stopping polishing by the polishing module when the second friction force is equal to the planarization friction value, and generating the surface acoustic wave filter with the temperature compensation structure after the planarization treatment is finished.
In some embodiments, step S3 comprises: s3-1, setting a constant load pressure for the grinding module to grind the patterned structure, and simultaneously acquiring an initial friction force between the grinding module and the patterned structure; s3-2, when the grinding module contacts the patterned structure with the constant load pressure, acquiring working parameter information of the grinding module acting on the patterned structure, wherein the working parameter information at least comprises a second friction force between the grinding module and the patterned structure; step S3-3, setting the flattening friction value, wherein the flattening friction value is a first flattening friction value, and the first flattening friction value is the product of the duty ratio of the first electrode film and the initial friction force; and S3-4, grinding the patterned structure by adopting a grinding module, simultaneously monitoring a second friction force between the grinding module and the patterned structure in real time, identifying a termination signal generated as a polishing planarization terminal point when the second friction force is monitored to be equal to the first planarization friction force value, stopping grinding by the grinding module according to the termination signal, and finishing the planarization treatment.
In some embodiments, the polishing module comprises a first polishing unit comprising a grooved polishing cloth, the polishing cloth being one of polyvinylidene fluoride, nylon, polyacetal.
In some embodiments, the trench includes a plurality of trench cells arranged in parallel, and the depth of the trench cells is 10% to 50% of the thickness of the patterned structure.
In some embodiments, the grinding module further comprises a second grinding unit that is a polishing fluid comprising abrasive particles, an acid-base modifier, a stabilizer, and a solvent.
In some embodiments, the abrasive particles are core-shell structures of a first abrasive material coated with a second abrasive material, the first abrasive material having a hardness less than the second abrasive material.
In some embodiments, after step S2, further comprising: s4-3-1, setting a constant load pressure for the grinding module to grind the patterned structure, and simultaneously acquiring an initial friction force between the grinding module and the patterned structure; s4-3-2, setting a second planarization friction value, wherein the second planarization friction value is 1.1-2 times of the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising silicon dioxide grinding fluid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal which is a planarization end point of the first-step polishing when the friction force is monitored to be equal to the second planarization friction value, and finishing the first-step polishing; and S4-3-3, setting a third planarization friction value, wherein the third planarization friction value is the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising cerium dioxide grinding liquid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal of a planarization end point of the second-step polishing when the friction force is monitored to be equal to the third planarization friction value, and finishing the second-step polishing.
In some embodiments, the polishing module includes an edge polishing module and a central polishing module, which are concentrically disposed, the edge polishing module includes an edge friction force detection unit, the central polishing module includes a central friction force detection unit, and the patterned structure is planarized by a chemical mechanical polishing method, and then the method includes: step S5-1, setting the same constant load pressure for the edge grinding module and the central area grinding module, and starting grinding the surface acoustic wave filter by the edge grinding module and the central area grinding module at the same angular speed; s5-2, detecting the central friction force at the top of the surface acoustic wave filter through the central area detection unit, identifying and generating a first termination signal of a planarization end point of central area polishing if the central friction force is detected to exceed the threshold value of the planarization friction force, and stopping the central area grinding module according to the first termination signal; s5-3, detecting the edge friction force at the top of the surface acoustic wave filter through the edge region detection unit, if the edge friction force is detected to exceed the threshold value of the planarization friction force, identifying and generating a second termination signal of a planarization end point of edge region polishing, and stopping the edge region grinding module according to the second termination signal; and S5-4, generating a flat surface acoustic wave filter after the central area grinding module and the edge area grinding module are stopped.
The invention also provides a surface acoustic wave filter with a temperature compensation structure, which comprises a piezoelectric substrate, an electrode film and the temperature compensation structure and is characterized in that the top of the surface acoustic wave filter is polished by the processing method of the temperature compensation type surface acoustic wave filter.
The invention also provides a processing method of the duplexer, the duplexer comprises at least a first acoustic surface filter and a second acoustic surface filter which are composed of temperature compensation structures with different thicknesses, and the processing method is characterized in that the first acoustic surface filter and the second acoustic surface filter are respectively or simultaneously polished by utilizing the manufacturing method of the acoustic surface filter with the temperature compensation structures.
Wherein, the method for manufacturing the surface acoustic wave filter with the temperature compensation structure is used for polishing the first surface acoustic wave filter and the second surface acoustic wave filter simultaneously, and comprises the following steps: step S6, providing a piezoelectric substrate, and forming a first electrode with a first thickness on the piezoelectric substrateThe first electrode film and the second electrode film are provided with a second thickness, the first electrode film and the second electrode film respectively comprise an interdigital transducer and reflection gates positioned on two sides of the interdigital transducer, and the first thickness is smaller than the second thickness; s7, manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the first temperature compensation structure is SiO 2 A film, wherein the first temperature compensation structure forms a patterned structure on a surface far away from the first electrode film and the second electrode film; step S8, generating a normalized first planarization friction force according to the friction force characteristic acting on the top of the first surface acoustic wave filter, and carrying out planarization end point identification on the tops of the first surface acoustic wave filter and the second surface acoustic wave filter by utilizing the first planarization friction force to carry out a chemical mechanical polishing method; and S9, performing mask processing on the flattened surface of the first surface acoustic wave filter, and manufacturing a second temperature compensation structure by adopting a vapor deposition method, wherein the second temperature compensation structure forms a flat structure on the surface far away from the second electrode film.
Wherein, the polishing of the first surface acoustic wave filter and the second surface acoustic wave filter by the method for manufacturing a surface acoustic wave filter with a temperature compensation structure comprises: step S10, providing a piezoelectric substrate, and forming a first electrode film with a first thickness and a second electrode film with the first thickness on the piezoelectric substrate, wherein the first electrode film and the second electrode film respectively comprise an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, and the first thickness is smaller than the second thickness; step S11, carrying out mask treatment on the surface of the second electrode film, and manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the first temperature compensation structure is SiO 2 A film forming a first patterned structure on the first temperature compensation structure away from the first electrode film surface; step S12, generating a normalized first planarization friction force according to the friction force characteristic acting on the top of the first surface acoustic wave filter, and carrying out planarization end point identification on the top of the first surface acoustic wave filter by using the first planarization friction force to carry out a chemical mechanical polishing method; step S13, for the aboveThe surface of the first surface acoustic wave filter is subjected to mask processing, a second temperature compensation structure is manufactured by adopting a vapor deposition method, a second patterning structure is formed on the surface, far away from the second electrode film, of the second temperature compensation structure, and the thickness of the second temperature compensation structure is larger than that of the first temperature compensation structure; and a step S14 of generating a normalized second flattening frictional force from the frictional force characteristic acting on the top of the second surface acoustic wave filter, and performing a chemical mechanical polishing method using the second flattening frictional force to identify a flattening end point of the top of the second surface acoustic wave filter.
The present invention also provides a device for processing a surface acoustic wave filter having a temperature compensation structure, comprising: the electrode processing module is used for providing a piezoelectric substrate, and a first electrode film is formed on the piezoelectric substrate; the temperature compensation structure processing module is used for manufacturing a temperature compensation structure by adopting a chemical vapor deposition method, and the temperature compensation structure is SiO 2 A film, wherein the temperature compensation structure forms a patterned structure on the surface far away from the first electrode film; a grinding module for providing a constant load pressure; the flattening module is used for adopting a chemical mechanical polishing method to carry out flattening treatment on the patterned structure and setting a first flattening friction value, and the flattening module further comprises a monitoring module which monitors that the friction force between the polishing module and the patterned structure is equal to the first flattening friction value, the flattening treatment is finished, and the surface acoustic wave filter with the temperature compensation structure is generated.
Wherein the grinding module comprises: a plurality of sensors for detecting the friction force of the patterned structure, and acquiring the working parameter information of the grinding module for grinding the patterned structure at the constant load pressure through the sensors, wherein the working parameter information at least comprises a second friction force between the grinding module and the patterned structure when the grinding module is in contact with the patterned structure;
the flattening module is further configured to set the first flattening friction value, which is a product of the duty cycle of the electrode film and the second friction.
The beneficial effects obtained by the invention are as follows:
the manufacturing method of the surface acoustic wave filter with the temperature compensation structure can identify the grinding of the temperature compensation layer of the filter by utilizing the pressure control of the grinding device in the stage that the surface of the filter generates irregular bulges in the processing process of the temperature compensation type surface acoustic wave filter, particularly in the chemical grinding process, so that the surface of the whole filter tends to be flat, and the performance of the whole device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic diagram of a portion to be ground of a conventional surface wave filter having a temperature compensation structure;
fig. 2 is a flow chart of a method for manufacturing a surface acoustic wave filter having a temperature compensation structure according to an embodiment of the present invention;
FIG. 3 is a block diagram of a polishing module according to an embodiment of the present invention;
FIG. 4 is a view showing a practical application of a chemical mechanical polishing apparatus for manufacturing a surface acoustic wave filter having a temperature compensation structure;
fig. 5 is a flowchart of a method of manufacturing a saw filter having a temperature compensation structure using the grinding module of fig. 3;
FIG. 6 is a structural frame diagram of another grinding module in accordance with an embodiment of the present invention;
fig. 7 is a flowchart of a method of manufacturing a saw filter having a temperature compensation structure to which the polishing module of fig. 6 is applied;
fig. 8 is a flowchart of a method for processing a duplexer according to an embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a duplexer according to an embodiment of the present invention;
fig. 10 is a block diagram showing the structure of a processing apparatus for a temperature compensation type surface acoustic wave filter according to an embodiment of the present invention.
Reference numerals: 101-a part to be ground of a surface wave filter with a temperature compensation structure;
102-a surface wave filter having a temperature compensation structure;
3-grinding module, 31-first grinding unit, 32-second grinding unit;
41-clamp, 42-bearing film, 43-base plate, 44-polishing pad, 45-vessel for pouring polishing solution;
5-grinding module, 51-edge grinding module, 52-central area grinding module;
81-electrode machining module, 82-temperature compensation structure machining module, 83-grinding module, 84-flat
Change module
Detailed Description
So that the manner in which the above recited objects, features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
In the process of processing the surface acoustic wave filter, especially the surface acoustic wave filter with the temperature compensation structure, the problem of uneven top of the surface acoustic wave filter is caused when an electrode film and the temperature compensation structure are deposited, although in some prior art, a chemical mechanical polishing method is adopted to polish the top end of the filter, as shown in fig. 1, 101 is the surface acoustic wave filter with the temperature compensation structure, and a dotted line part 101 is a part to be polished of the surface acoustic wave filter 102 with the temperature compensation structure, and generally, the polishing is controlled according to experience, so that the problems of excessive polishing or insufficient polishing may exist, and therefore, the problem of planarization of the surface acoustic wave filter with the temperature compensation structure cannot be solved, and the high performance of the surface acoustic wave filter is not facilitated. According to the manufacturing method of the surface acoustic wave filter with the temperature compensation structure, irregular bulges are generated on the surface of the filter due to excessive or non-complete grinding operation in the processing process of the temperature compensation type surface acoustic wave filter, particularly in the chemical grinding process, the grinding of the temperature compensation layer of the filter can be intelligently identified by utilizing the pressure control of the grinding device, so that the surface of the whole filter tends to be flat, and the frequency characteristic of the whole device is improved.
Example one
One embodiment of the present invention provides a method of fabricating a surface acoustic wave filter having a temperature compensation structure. As shown in fig. 2, a flow chart of a method for manufacturing a surface acoustic wave filter with a temperature compensation structure is disclosed, which includes:
step S1, a piezoelectric substrate is provided, and a first electrode film is formed on the piezoelectric substrate. The first electrode film may include an interdigital transducer and reflective gratings on both sides of the interdigital transducer.
The concrete implementation is as follows: firstly, a piezoelectric substrate of the filter is manufactured, wherein the piezoelectric substrate can be single-crystal lithium niobate, single-crystal lithium tantalate or a substrate with a piezoelectric film on the surface, after the piezoelectric substrate is manufactured, an electrode film covering the piezoelectric substrate can be manufactured, and according to the design requirements of the filter, the electrode film is provided with the interdigital transducer and patterns and structures of reflection gratings positioned on two sides of the interdigital transducer, such as a high-low staggered electrode arrangement structure.
S2, manufacturing a temperature compensation structure by adopting a vapor deposition method, wherein the temperature compensation structure is SiO 2 And forming a patterned structure on the surface of the temperature compensation structure far away from the first electrode film.
The concrete implementation is as follows: the vapor deposition method may be chemical vapor deposition or physical vapor deposition. Chemical vapor deposition utilizes various vapor compounds or elements containing thin film elements such as Si, siC, siGe, siGeC, ge alloys, geAs, inAs, inP, NDC (Nitrogen)A doped Si1icon carbon, nitrogen doped silicon carbide) or the like, and the temperature compensation structure is deposited uniformly by chemical reaction on the surface of the formed electrode film. Physical vapor deposition using SiO-containing 2 The target material is subjected to physical vapor deposition on the surface of the electrode film, and is uniformly deposited into a temperature compensation structure. The temperature compensation structure after vapor deposition has an arrangement structure similar to that of the electrode film under the influence of the electrode arrangement structure of the electrode film.
And S3, carrying out planarization treatment on the patterned structure by adopting a chemical mechanical polishing method, wherein the planarization friction value is set, polishing the patterned structure by adopting a preset polishing module, simultaneously monitoring the friction force between the polishing module and the patterned structure in real time, stopping polishing by using the polishing module when the friction force is equal to the planarization friction value, and generating the surface acoustic wave filter with the temperature compensation structure after the planarization treatment is finished.
The concrete implementation is as follows: a surface acoustic wave filter having a temperature compensation structure has been formed for step S2, but the temperature compensation structure produces rugged protrusions which appear as rugged patterned structures in the morphology of the device. In order to achieve planarization of the whole device, the patterned structure needs to be polished, and when polishing is performed by chemical mechanical polishing, polishing is generally performed by using a polishing module to provide a constant load pressure, and the polishing module can be implemented as a polishing device dedicated to precision devices such as semiconductors, for example, as a combination structure of a polishing head and a polishing pad, and the implementation manner of the polishing module is not limited in this embodiment. The flattening friction value may be set empirically.
For more precise and intelligent control of the cmp process, a planarization friction value may be precisely set according to parameter information of the formed first electrode film in combination with the unevenness of the patterned structure. In order to accurately obtain a planarization friction value, which is a friction value for planarizing the entire device, when the polishing module is in contact with the patterned structure under the load pressure, obtaining working parameter information of the polishing module acting on the patterned structure, where the working parameter information includes at least a friction force between the polishing module and the patterned structure, and for clarity, the working parameter information is named as a second friction force, where the working parameter information includes a pressure detection device preset in the polishing module, such as a pressure sensor, for capturing the friction force between the polishing module and the patterned structure in real time, when the polishing module is in contact with the patterned structure under the load pressure, the polishing module starts to polish, the unevenness on the patterned structure is not polished yet, the friction force between the polishing module and the patterned structure is the maximum, and the obtained initial friction force is the polishing module and the patterned structure, and then, when the polishing module is in contact with the patterned structure under the constant load pressure, the second friction force is generated between the polishing module and the patterned structure, and the second friction force is used as a reference factor for setting the planarization friction value.
Another reference factor in setting the planarization friction value is the duty cycle of the first electrode film, which has an effect on the degree of abrading the patterned structure. A larger duty cycle first electrode film can withstand a lower degree of polishing, while a smaller duty cycle first electrode film can withstand a higher degree of polishing.
The planarization friction value is set to be the product of the duty ratio of the first electrode film and the initial friction in the present embodiment. The planarization friction value is used as the minimum value of the friction force between the polishing module and the patterned structure when the subsequent polishing module polishes the patterned structure, and the polishing is stopped when the second friction force between the polishing module and the patterned structure reaches the value.
Specifically, the duty ratio of the first electrode film is a value less than 1, the initial friction force is a friction force measured when the polishing module is just in contact with the patterned structure, the friction force before the polishing module and the patterned structure is maximum at the beginning of polishing, and the product of the duty ratio of the first electrode film and the initial friction force is less than the second friction force. When the second friction between the grinding module and the patterned structure is monitored to be reduced to the first flattening friction value, namely the friction value set according to the product of the duty ratio of the first electrode film and the initial friction force, the surface of the patterned structure is considered to be sufficiently flattened, and the grinding is stopped at this moment.
In the case where the flatness of the patterned structure is the same, that is, the second friction force is the same, when the duty ratio of the first electrode film is large, for example, 0.9, the first planarization friction force value obtained is large, that is, when the friction force between the polishing module and the patterned structure is still large, the polishing is stopped. When the duty ratio of the first electrode film is small, for example, 0.6, the first planarization friction value is obtained to be smaller, and the patterned structure is polished to a higher degree, that is, the surface of the patterned structure is more flat, and the polishing is stopped when the friction between the polishing module and the patterned structure is smaller.
Therefore, the whole patterned structure formed by the electrode film and the temperature compensation structure is used as the reference of planarization, so that the accurate planarization friction force can be obtained, and the intelligent control of the chemical grinding process can be realized. In other embodiments, the operating parameter information may further include multidimensional data such as a current polishing temperature and humidity of the polishing module, so as to assist in monitoring the current polishing environment.
Since the friction force generated by the rubbing module acting on different parts of the patterned structure is not constant, which is affected by the formed rugged patterned structure, and the friction force between the rubbing module and the patterned structure is changing during the rubbing process as described above, it is necessary to monitor the friction force between the rubbing module and the patterned structure in real time, recognize a termination signal generated as a planarization endpoint of the polishing when it is monitored that the friction force between the rubbing module and the patterned structure is equal to the first planarization friction value, i.e., neither over-rubbing nor under-rubbing, and stop the polishing according to the termination signal to generate a planarized saw filter, i.e., the planarization process is terminated.
According to the manufacturing method of the surface acoustic wave filter, the grinding degree can be accurately controlled, the planarization end point can be automatically identified, the situations of over grinding and insufficient grinding are avoided, and the grinding quality of the patterning structure with fine size is improved.
Further, the design of the grinding module plays an important role in further improving the grinding quality. As shown in fig. 3, an implementation manner of the polishing module 3 may include a first polishing unit 31, where the first polishing unit 31 includes a polishing cloth with grooves, and the polishing cloth is one of polyvinylidene fluoride, nylon, and polyacetal, and may be selected according to polishing efficiency. The grooves of the first polishing unit 31 may include a plurality of groove units arranged in parallel, and the depth of the groove units is 10% to 50% of the thickness of the patterned structure to be polished, so that the polishing efficiency can be improved, the service life of the first polishing unit can be effectively prolonged, and the cost can be saved. Further, first grinding unit is bilayer structure, has the upper strata grinding unit that contacts with temperature compensation structure and keeps away from the lower floor grinding unit of temperature compensation structure, and the hardness of lower floor grinding unit is less than upper grinding unit, can increase the compressibility of first grinding unit, guarantees the even contact of first grinding unit and surface acoustic wave device, is favorable to surface acoustic wave device surface grinding's uniformity, improves surface acoustic wave device and grinds surperficial flat type and homogeneity.
Further, the grinding module 3 further includes a second grinding unit 32, and the second grinding unit 32 is a grinding fluid including grinding particles, an acid-base regulator, a stabilizer, and a solvent. The grinding particles are of a core-shell structure in which a first grinding material coats a second grinding material, and the hardness of the first grinding material is smaller than that of the second grinding material.
Illustratively, as shown in fig. 4, it is a view of a practical application scenario of a chemical mechanical polishing apparatus, wherein the chemical mechanical polishing apparatus comprises a work fixture 41, a carrier film 42, a base plate 43, a polishing pad 44 and a vessel 45 for pouring polishing liquid, when in use, a wafer (not shown) is placed on the base plate 43, and a surface to be ground of the wafer and the carrier of the work fixture 41 are connected to each otherThe carrier film 42 is in contact with the polishing pad 44 on the lower surface, the wafer is clamped by the lower pressure provided by the working fixture, and the grinding pressure is adjusted, during the grinding process, the wafer is ground under the transverse rotation below the base plate by pouring the grinding liquid through the vessel 45 for pouring the polishing liquid, illustratively, silicon dioxide grinding liquid can be adopted, and the grinding particles in the silicon dioxide grinding liquid can be porous SiO coated with cerium dioxide 2 The abrasive material is coated by the cerium dioxide with lower hardness outside the silicon dioxide with higher hardness, so that flexible grinding can be realized. Ceria on SiO 2 The abrasive forms a softening layer outside, has strong complexing effect and can improve the polishing efficiency, and SiO 2 The support of the abrasive core can solve the problem of poor dispersibility due to easy agglomeration of cerium dioxide, and the porous abrasive can adsorb grinding fluid, thereby improving the SiO content 2 The polishing speed and the surface quality of the surface of the brittle film are good, the surface precision is good, and the damage is less. The abrasive particles in other types of slurries can also be ceria coated alumina, ceria coated titania, ceria coated zirconia particles, wherein the abrasive particles are 0.2% to 5% by weight and have a particle size of 30 to 80nm. The pH regulator for regulating the removal efficiency of the silica membrane may be a solvent of pH4-6, amino acid or amino acid derivative. The stabilizer can be non-Newtonian fluid, the electrostatic repulsion between abrasive particles is reduced by adding the stabilizer, and the grinding process can be well controlled to ensure the grinding stability. In other embodiments, the abrasive particles may also be coated with SiO in a microsphere system of polymers such as PS/PMMA 2 . The solvent can be ethanol, diethyl ether, etc. The manufacturing method of the surface acoustic wave filter adopting the grinding module can improve the grinding efficiency, effectively prolong the service life of the grinding module, well control the grinding process to ensure the grinding stability and improve the surface quality of the ground patterned structure.
Example two
An embodiment of the present invention provides a method for manufacturing a surface acoustic wave filter having a temperature compensation structure, which is different from the first embodiment in that a two-step polishing method is used to polish and polish a patterned structure of the temperature compensation structure.
As shown in fig. 5, the method of manufacturing the surface acoustic wave filter having the temperature compensation structure may include:
and S4-1, providing a piezoelectric substrate, and forming a first electrode film on the piezoelectric substrate, wherein the first electrode film comprises an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer.
S4-2, manufacturing a temperature compensation structure by adopting a vapor deposition method, wherein the temperature compensation structure is SiO 2 And the temperature compensation structure forms a patterned structure on the surface far away from the first electrode film.
The specific implementation of step S4-1 and step S4-2 is substantially the same as that of step S1 and step S2 in the first embodiment, and details are not repeated here.
The manufacturing method of the surface acoustic wave filter further comprises the step of carrying out planarization treatment on the patterned structure by adopting a chemical mechanical polishing method, wherein the planarization treatment comprises two grinding and polishing steps, and specifically comprises the following steps:
step S4-3-1, setting a constant load pressure for a grinding module to grind the patterned structure, and simultaneously acquiring an initial friction force between the grinding module and the patterned structure;
step S4-3-2, setting a second planarization friction value, where the method of setting the second planarization friction value is the same as step S3 in the first embodiment, and similarly, when the polishing module contacts the patterned structure with the load pressure, obtaining an initial friction force between the polishing module and the patterned structure, and the difference from the first embodiment is that a second planarization friction value is obtained by using 1.1-2 times of a product of a duty ratio of the first electrode film and the initial friction force.
And further, grinding the patterned structure by using a grinding module comprising silicon dioxide grinding fluid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, when the friction force between the grinding module and the patterned structure obtained by grinding the patterned structure by using the silicon dioxide grinding fluid is monitored to be equal to the second flattening friction force value, considering that the flattening endpoint of the first grinding and polishing is reached, identifying and generating a flattening termination signal for the first polishing, and finishing the first grinding and polishing.
The first step of grinding and polishing process adopts silicon dioxide grinding liquid, the main component of the grinding liquid is silicon dioxide particles, the hardness of the silicon dioxide is high, and the silicon dioxide can be quickly ground, but in order to avoid excessive grinding, a second large flattening friction value is set in the first step of grinding and polishing, and when the friction force between the grinding module and the patterned structure is equal to the second flattening friction value, namely the surface of the patterned structure is not very flat, the first step of grinding and polishing is stopped.
Step S4-3-2, setting a third planarization friction value, where a method of setting the third planarization friction value is the same as that in step S3 in the first embodiment, and similarly, when the polishing module contacts the patterned structure with the load pressure, obtaining a third initial friction between the polishing module and the patterned structure, and then obtaining the third planarization friction value by taking a product of the duty ratio of the first electrode film and the initial friction.
And further, grinding the patterned structure by using the grinding module by using the cerium dioxide grinding fluid by using the grinding module, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, and when the friction force between the grinding module and the patterned structure obtained by grinding the patterned structure by using the cerium dioxide grinding fluid is monitored to be equal to the third planarization friction force value, considering that the planarization endpoint of the second-step grinding and polishing is reached, identifying and generating a planarization termination signal of the second-step polishing, and finishing the second-step grinding and polishing.
The ceria grinding fluid is adopted in the first grinding and polishing process, the main component of the grinding fluid is ceria particles, the ceria has low hardness, the grinding speed is low, the ceria can be ground more finely, excessive grinding can be avoided, meanwhile, the surface of the patterned structure which is not very flat after the first grinding and polishing is finished can be further ground finely, and the performance of the whole device is prevented from being influenced by the uneven deposition structure.
Moreover, the silica polishing solution and the ceria polishing solution in this embodiment only include silica particles and ceria particles, and corresponding acid-base modifier, stabilizer, and solvent, respectively, instead of using a core-shell structure in which the first abrasive material coats the second abrasive material, the cost of the polishing solution can be reduced.
According to the method disclosed by the embodiment, the polished morphology can be better controlled by adopting a two-step grinding method, the silicon dioxide grinding fluid with higher hardness is firstly adopted for rough polishing, and the cerium dioxide grinding fluid with lower hardness is adopted for fine polishing, so that the grinding efficiency is considered, the fine polishing of the surface acoustic wave device can be realized, the surface planarization degree is higher, and the device of the surface acoustic wave device with high performance can be realized.
EXAMPLE III
A specific embodiment of the present invention provides a method for manufacturing a surface acoustic wave filter having a temperature compensation structure, which is different from the first embodiment and the second embodiment in that a grinding module is further designed, and a process for monitoring a friction force between the grinding module and a patterned structure in real time is further designed.
As shown in fig. 6, for another implementation manner of the polishing module 5, the polishing module includes an edge polishing module 51 and a central polishing module 52, which are concentrically disposed, the edge polishing module includes an edge friction force detecting unit, and the central polishing module includes a central friction force detecting unit. Generally speaking, the pressure of the piezoelectric substrate is the largest in the central area and the pressure is the smallest in the edge area, and such pressure distribution is not favorable for the uniform removal of the temperature compensation structure. Since the pressure difference between the edge and the center of the patterned structure of the saw device may cause different friction forces when the edge or the center is polished, it is necessary to configure a polishing detection unit adapted to different areas to monitor the polishing process. If the edge region is polished by using a flattening friction force acting on the central region, the edge region is significantly thinned from the middle part of the bevel, so that the thinned edge of the polished device affects the devices near the edge, and the edge is crushed due to over-polishing.
Thus, two types of detection units are set, wherein the edge area polishing module 51 and the central area polishing module 52 can be implemented as sensors disposed at the edge and the center of the polishing head of the polishing module, such as pressure detectors, and can detect the forces at the edge and the center during the polishing process in real time, and after the steps S1 and S2 of the first embodiment or the steps S4-1 and S4-2 of the second embodiment are adopted, i.e., after the patterning structure is flattened by the chemical mechanical polishing method (i.e., the step S3 of the first embodiment or the steps S4-3-1 and S4-3-2 of the second embodiment), the polishing module of the present embodiment is used to perform a method for manufacturing a surface acoustic wave filter having a temperature compensation structure as shown in fig. 7, and further includes the following steps.
And S5-1, setting the same constant load pressure for the edge region grinding module and the central region grinding module, and starting grinding the surface acoustic wave filter at the same angular speed by the edge region grinding module and the central region grinding module.
And S5-2, detecting the central friction force of the top of the surface acoustic wave filter through a central area detection unit, identifying and generating a first termination signal of a planarization end point of the polishing of the central area if the central friction force is detected to exceed the threshold value of the planarization friction force, and stopping the central area grinding module according to the first termination signal. Consider an abrading head comprising a central abrading head and an edge abrading head. When the central grinding force reaches the flattening friction force, the central grinding head stops, and the edge grinding head continues to work.
And S5-3, detecting the edge friction force at the top of the surface acoustic wave filter through an edge region detection unit, identifying and generating a second termination signal of a planarization end point of edge region polishing if the edge friction force is detected to exceed the threshold value of the planarization friction force, and stopping the edge region grinding module according to the second termination signal. The threshold value of the planarization friction force is set to satisfy the planarization friction force that the edge area is not excessively polished or insufficiently polished, because the planarization friction force generally acting on the central area is often smaller than that of the edge area, and the planarization friction force of the edge area is taken as the threshold value reference, which is more beneficial to precisely polishing the edge and the central area. When the central friction force and the edge friction force are detected to exceed the threshold value of the flattening friction force, the polished edge and the polished center are judged to be sufficient, and a termination signal is generated. Namely, when the edge friction force also reaches the flattening friction force, the edge grinding head stops working, and the polishing process is finished.
And S5-4, generating a flat surface acoustic wave filter after the central area grinding module and the edge area grinding module are stopped. Through the partition control of the grinding head, the central area is not subjected to transition polishing, and the polishing uniformity is ensured.
From this, reducible excessive grinding that has the surface acoustic wave device edge of temperature compensation structure in the course of lapping to reduce the middle part after the surface acoustic wave device that has the temperature compensation structure grinds and the grinding thickness difference at edge, through grinding head subregion control, make the central zone not by transition polishing, guarantee polishing homogeneity, effectively promote the grinding homogeneity of the surface acoustic wave device that has the temperature compensation structure, improve the grinding quality of the surface acoustic wave device that has the temperature compensation structure.
Example four
In an embodiment of the present invention, a temperature compensation type surface acoustic wave filter is provided, which includes a piezoelectric substrate, an electrode film, and a temperature compensation structure, and a top of the surface acoustic wave filter is polished by using the processing method of the temperature compensation type surface acoustic wave filter according to the first embodiment, the second embodiment, or the third embodiment.
EXAMPLE five
In a specific embodiment of the present invention, a method for processing a duplexer is provided, where the duplexer includes at least two first acoustic surface filters and second acoustic surface filters composed of temperature compensation structures with different thicknesses, and the first acoustic surface filter and the second acoustic surface filter can be polished separately or simultaneously by using a method for processing a temperature compensation type surface acoustic wave filter as in the first embodiment, the second embodiment, or the third embodiment, and the separate polishing can be directly implemented in combination with the first embodiment, the second embodiment, or the third embodiment. However, since the two surface filters have temperature compensation structures with different thicknesses, an implementation of polishing the first surface acoustic filter and the second surface acoustic filter simultaneously by using the processing method of the temperature compensation type surface acoustic filter according to the first embodiment, the second embodiment, or the third embodiment is shown in fig. 8, and includes:
step S6, providing a piezoelectric substrate, and forming a first electrode film with a first thickness and a second electrode film with a second thickness on the piezoelectric substrate, wherein the first electrode film and the second electrode film both comprise an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, and the first thickness is greater than the second thickness;
s7, manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the temperature compensation structure is SiO 2 A film, wherein the first temperature compensation structure forms a patterned structure on the surface far away from the first electrode film and the second electrode film;
the implementation manner of step S6 and step S7 is substantially the same as that of step S1 and step S2 or step S4-1 and step S4-2, and will not be described herein again.
And S8, generating a normalized first planarization friction force according to the friction force characteristics respectively acting on the top of the first surface acoustic wave filter and the top of the second surface acoustic wave filter, and carrying out planarization end point identification on the tops of the first surface acoustic wave filter and the second surface acoustic wave filter by using the first planarization friction force to carry out a chemical mechanical polishing method.
During the process of simultaneously grinding the first surface acoustic wave filter and the second surface acoustic wave filter with different thicknesses (heights), when the surfaces with different thicknesses are polished, friction coefficients between the surfaces of different patterned structures and the grinding module can change, and when the rotating speed of the grinding module does not change the pressure of the first surface acoustic wave filter and the second surface acoustic wave filter under polishing, the friction force between the tops of the two different surface acoustic wave filters and the grinding module can obviously change, so that the normalized first flattened friction force is selected, and the influence of the fluctuation of the tops of the different filters on the grinding module can be eliminated.
And S9, performing mask processing on the surface of the flattened first surface acoustic wave filter, and manufacturing a second temperature compensation structure by adopting a vapor deposition method, wherein the second temperature compensation structure forms a flat structure on the surface far away from the second electrode film.
The SiO of the first surface acoustic wave filter and the SiO of the second surface acoustic wave filter can be simultaneously formed by the same flattening friction force 2 The layers are ground to the same thickness, and since the electrode films of the two surface acoustic wave filters have different thicknesses, there is now one SiO of the surface acoustic wave filter 2 The layer is thin and SiO for the first surface acoustic wave filter and the second surface acoustic wave filter 2 Layer thickness requirements are different for SiO requiring thinner SAW filters 2 The area can be realized by adding a mask plate, and the SiO of the surface acoustic wave filter needing thicker surface acoustic wave filter 2 The area(s) is (are) continuously subjected to chemical vapor deposition, so that SiO with two thicknesses is obtained 2 A first surface acoustic wave filter and a second surface acoustic wave filter are laminated.
The polishing end point, namely the planarization end point, obtained by carrying out chemical mechanical polishing by utilizing the normalized planarization friction force can improve the accuracy of end point detection, so that the tops of the two surface acoustic wave filters with different thicknesses are simultaneously polished.
EXAMPLE six
In a specific embodiment of the present invention, a method for processing a duplexer, where the duplexer includes at least two first acoustic surface filters and second acoustic surface filters composed of temperature compensation structures with different thicknesses, and an implementation manner of polishing the first acoustic surface filter and the second acoustic surface filter by using a method for processing a temperature compensation type surface acoustic wave filter according to the first embodiment, the second embodiment, or the third embodiment is shown in fig. 9, where the method includes:
step S10, providing a piezoelectric substrate, and forming a first electrode film with a first thickness and a second electrode film with the first thickness on the piezoelectric substrate, wherein the first electrode film and the second electrode film respectively comprise an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, and the first thickness is smaller than the second thickness.
Step S11, performing mask treatment on the surface of the second electrode film, and manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the first temperature compensation structure is SiO 2 And the first temperature compensation structure forms a first patterning structure on the surface far away from the first electrode film.
The implementation manner of step S10 and step S11 is substantially the same as that of step S1 and step S2, and is not described herein again.
And S12, generating a normalized first planarization friction force according to the friction force characteristics acting on the top of the first surface acoustic wave filter, and performing planarization end point identification on the top of the first surface acoustic wave filter by using the first planarization friction force to perform a chemical mechanical polishing method.
During the process of simultaneously grinding the first surface acoustic wave filter and the second surface acoustic wave filter with different thicknesses (heights), when the surfaces with different thicknesses are polished, friction coefficients between the surfaces of different patterned structures and the grinding module can change, and when the rotating speed of the grinding module does not change the pressure of the first surface acoustic wave filter and the second surface acoustic wave filter under polishing, the friction force between the tops of the two different surface acoustic wave filters and the grinding module can obviously change, so that the normalized first flattened friction force is selected, and the influence of the fluctuation of the tops of the different filters on the grinding module can be eliminated.
And S13, carrying out mask processing on the surface of the first surface acoustic wave filter, and manufacturing a second temperature compensation structure by adopting a vapor deposition method, wherein the second temperature compensation structure forms a second patterning structure on the surface far away from the second electrode film, and the thickness of the second temperature compensation structure is larger than that of the first temperature compensation structure.
The first saw filter can thus be first subjected to a planarization process in the manner of the above-disclosed embodiment.
And a step S14 of generating a normalized second flattening friction force according to the friction force characteristics acting on the top of the second surface acoustic wave filter, and performing chemical mechanical polishing by using the second flattening friction force to identify a flattening end point of the top of the second surface acoustic wave filter.
Therefore, the first sound surface filter can be subjected to the flattening treatment, and then the second sound surface filter can be subjected to the flattening treatment. And respectively processing the first surface acoustic wave filter and the second surface acoustic wave filter of the duplexer.
EXAMPLE seven
An embodiment of the present invention provides a processing apparatus of a temperature compensation type surface acoustic wave filter, as shown in fig. 10, including:
and the electrode processing module 81 is used for providing a piezoelectric substrate, and a first electrode film is formed on the piezoelectric substrate and comprises an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer. The module can be used for manufacturing a piezoelectric substrate of a filter, the manufacturing mode can be realized by referring to the prior art, the key point is not taken in the application, after the piezoelectric substrate is manufactured, an electrode film covering the piezoelectric substrate can be manufactured, the electrode film can also be an IDT electrode, and the pattern and the structure of an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, such as a high-low staggered electrode arrangement structure, are configured according to the design requirement of the filter.
A temperature compensation structure processing module 82 for fabricating a temperature compensation structure of SiO by vapor deposition 2 And the temperature compensation structure forms a patterned structure on the surface far away from the first electrode film. The module may use a plurality of gas phase compounds or simple substances containing thin film elements, such as Si, siC, siGe, siGeC, ge alloy, geAs, inAs, inP, NDC (Nitrogen bonded Si1icon carbon, nitrogen-doped silicon carbide), and the like, which may form a temperature compensation structure, to perform a chemical reaction on the surface of the formed piezoelectric substrate to generate the temperature compensation structure, and the generation of the patterning structure may be designed as required, which is not a major concern in this embodiment.
A grinding module 83 for providing a constant load pressure. The grinding module may be implemented as a grinding device dedicated to precision devices such as semiconductors, for example, a combination structure of a grinding head and a polishing pad, and the implementation manner of the grinding module is not limited in this embodiment. Wherein, the grinding module 83 includes: and the working parameter information of the grinding module acting on the top of the surface acoustic wave filter is obtained through the sensors, and at least comprises a second friction force acting on the patterned structure. The grinding module also sets a constant load pressure to grind the patterned structure, and the sensor acquires an initial friction force between the grinding module and the patterned structure.
And a flattening module 84 for flattening the patterned structure by chemical mechanical polishing, setting a first flattening friction value, and ending the flattening process when the constant load pressure applied to the patterned structure is equal to the first flattening friction value, thereby generating the surface acoustic wave filter with the temperature compensation structure. In order to accurately obtain a first planarization friction value which is a friction value capable of planarizing the whole device, when the polishing module contacts the patterned structure, working parameter information of the polishing module acting on the patterned structure is obtained, the working parameter information at least comprises a second friction force acting on the patterned structure, the obtained mode can be captured in real time through a pressure detection device preset by the polishing module, and then the first planarization friction value is set. In other embodiments, the operating parameter information may further include multidimensional data such as a current polishing temperature and humidity of the polishing module to assist in monitoring the current polishing environment.
The planarization module 84 is also configured to set a first planarization friction value, the first planarization friction value being a product of the duty cycle of the first electrode film and the initial friction. Further, since the friction force generated by the grinding module acting on different parts of the patterned structure is not constant, which is influenced by the formed rugged patterned structure, the friction force acting on the patterned structure by the grinding module needs to be monitored in real time, when the planarization friction force acting on the patterned structure is equal to the first planarization friction value, that is, when the acting force of the grinding module on the patterned structure of the device as a whole is exactly the first planarization friction value which is calculated, that is, neither over grinding nor under grinding is performed, an end signal generated as a planarization end point of polishing is recognized, and the polishing is stopped according to the end signal to generate the flat surface acoustic wave filter, that is, the planarization process is ended.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A method for manufacturing a surface acoustic wave filter having a temperature compensation structure, comprising:
step S1, providing a piezoelectric substrate, and forming a first electrode film on the piezoelectric substrate;
s2, manufacturing a temperature compensation structure by adopting a vapor deposition method, wherein the temperature compensation structure is SiO 2 A film in which a patterned structure is formed on a surface of the temperature compensation structure away from the first electrode film;
s3, carrying out planarization treatment on the patterned structure by adopting a chemical mechanical polishing method, wherein the planarization friction value is set, polishing the patterned structure by adopting a preset polishing module, simultaneously monitoring a second friction force between the polishing module and the patterned structure in real time, stopping polishing by the polishing module when the second friction force is equal to the planarization friction value, and generating the surface acoustic wave filter with the temperature compensation structure after the planarization treatment is finished,
wherein, in step S3, the method includes:
step S4-3-1, setting a constant load pressure for the grinding module to grind the patterned structure, and simultaneously acquiring an initial friction force between the grinding module and the patterned structure;
s4-3-2, setting a second planarization friction value, wherein the second planarization friction value is 1.1-2 times of the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising silicon dioxide grinding fluid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal which is a planarization end point of the first-step polishing when the friction force is monitored to be equal to the second planarization friction value, and finishing the first-step polishing;
and S4-3-3, setting a third planarization friction value, wherein the third planarization friction value is the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising cerium dioxide grinding liquid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal of a planarization end point of the second-step polishing when the friction force is monitored to be equal to the third planarization friction value, and finishing the second-step polishing.
2. A surface acoustic wave filter having a temperature compensation structure, comprising a piezoelectric substrate, an electrode film and a temperature compensation structure, wherein the top of said surface acoustic wave filter is polished by the processing method of the temperature compensation type surface acoustic wave filter according to claim 1.
3. A method for manufacturing a duplexer, said duplexer comprising at least two first and second acoustic surface filters composed of temperature compensation structures of different thicknesses, wherein said first and second acoustic surface filters are polished separately or simultaneously by the method for manufacturing a surface acoustic wave filter having a temperature compensation structure as claimed in claim 1.
4. The method for processing a duplexer as claimed in claim 3, wherein the step of polishing the first and second surface acoustic filters simultaneously by using the method for manufacturing a surface acoustic wave filter having a temperature compensation structure as claimed in claim 1 comprises:
step S6, providing a piezoelectric substrate, and forming a first electrode film with a first thickness and a second electrode film with a second thickness on the piezoelectric substrate, wherein the first electrode film and the second electrode film both comprise an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, and the first thickness is smaller than the second thickness;
s7, manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the first temperature compensation structure is SiO 2 A film, wherein the first temperature compensation structure forms a patterned structure on a surface far away from the first electrode film and the second electrode film;
step S8, generating a normalized first planarization friction force according to the friction force characteristic acting on the top of the first surface acoustic wave filter, and carrying out planarization end point identification on the tops of the first surface acoustic wave filter and the second surface acoustic wave filter by utilizing the first planarization friction force to carry out a chemical mechanical polishing method;
and S9, performing mask processing on the flattened surface of the first surface acoustic wave filter, and manufacturing a second temperature compensation structure by adopting a vapor deposition method, wherein the second temperature compensation structure forms a flat structure on the surface far away from the second electrode film.
5. The method of manufacturing a duplexer according to claim 3, wherein the first and second surface acoustic filters are polished by the method of manufacturing a surface acoustic wave filter having a temperature compensation structure according to claim 1, respectively, and the method includes:
step S10, providing a piezoelectric substrate, and forming a first electrode film with a first thickness and a second electrode film with the first thickness on the piezoelectric substrate, wherein the first electrode film and the second electrode film respectively comprise an interdigital transducer and reflection gratings positioned on two sides of the interdigital transducer, and the first thickness is smaller than the second thickness;
step S11, carrying out mask treatment on the surface of the second electrode film, and manufacturing a first temperature compensation structure by adopting a vapor deposition method, wherein the first temperature compensation structure is SiO 2 A film forming a first patterned structure on the first temperature compensation structure away from the first electrode film surface;
step S12, generating a normalized first planarization friction force according to the friction force characteristic acting on the top of the first surface acoustic wave filter, and carrying out planarization end point identification on the top of the first surface acoustic wave filter by using the first planarization friction force to carry out a chemical mechanical polishing method;
step S13, carrying out mask processing on the surface of the first surface acoustic wave filter, and manufacturing a second temperature compensation structure by adopting a vapor deposition method, wherein the second temperature compensation structure forms a second patterning structure on the surface far away from the second electrode film, and the thickness of the second temperature compensation structure is larger than that of the first temperature compensation structure;
and a step S14 of generating a normalized second flattening frictional force from the frictional force characteristic acting on the top of the second surface acoustic wave filter, and performing a chemical mechanical polishing method using the second flattening frictional force to identify a flattening end point of the top of the second surface acoustic wave filter.
6. A processing apparatus of a surface acoustic wave filter having a temperature compensation structure, comprising:
the electrode processing module is used for providing a piezoelectric substrate, and a first electrode film is formed on the piezoelectric substrate;
temperature compensation structure processing module for using vapor depositionManufacturing a temperature compensation structure by an integral method, wherein the temperature compensation structure is SiO 2 A film, wherein the temperature compensation structure forms a patterned structure on the surface far away from the first electrode film;
the grinding module is used for providing constant load pressure so as to grind the patterned structure and simultaneously acquiring the initial friction force of the grinding module and the patterned structure;
the planarization module is used for planarizing the patterned structure by adopting a chemical mechanical polishing method and setting a first planarization friction value, and the planarization module also comprises a monitoring module which is used for monitoring that when the friction force between the polishing module and the patterned structure is equal to the first planarization friction value, the planarization is finished; the polishing module is used for polishing the patterned structure, setting a second planarization friction value, wherein the second planarization friction value is 1.1-2 times of the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising silicon dioxide grinding fluid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal of a planarization end point of the first-step polishing when the friction force is monitored to be equal to the second planarization friction value, and finishing the first-step polishing; setting a third planarization friction value, wherein the third planarization friction value is the product of the duty ratio of the first electrode film and the initial friction force, grinding the patterned structure by adopting a grinding module comprising cerium dioxide grinding liquid, simultaneously monitoring the friction force between the grinding module and the patterned structure in real time, identifying and generating a termination signal of a planarization end point of the second-step polishing when the friction force is monitored to be equal to the third planarization friction value, and finishing the second-step polishing.
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| JPH1187286A (en) * | 1997-09-05 | 1999-03-30 | Lsi Logic Corp | Two-staged mechanical and chemical polishing method and system for semiconductor wafer |
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