CN115694175A - Three-level BOOST device and control method thereof - Google Patents
Three-level BOOST device and control method thereof Download PDFInfo
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Abstract
The application discloses three-level BOOST device and control method thereof relates to power electronics and new energy power generation technical field, and the main circuit of the device includes: the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the first inductor, the second inductor, the first switch tube, the second switch tube, the third switch tube, the first diode and the second diode. The device is conducted by controlling the first switching tube and the third switching tube, the first capacitor and the second capacitor are precharged respectively by using the voltage between the anode and the cathode of the input end of the main circuit, meanwhile, after the first capacitor and the second capacitor are precharged, the first switching tube and the third switching tube are disconnected and the second switching tube is connected, and the third capacitor and the fourth capacitor are precharged respectively by using the voltages of the first capacitor and the second capacitor. The scheme of this application can realize crisscross ripples of sending out, can also reduce inductance ripple electric current simultaneously, reduces inductance value and equipment volume.
Description
Technical Field
The application belongs to the technical field of power electronics and new energy power generation, and particularly relates to a three-level BOOST device and a control method thereof.
Background
In a 1500V photovoltaic system application scene, considering the problem of IGBT voltage resistance, a three-level BOOST topology is needed to be used in a direct-current boosting part, and a main scheme is a double-BOOST three-level circuit and a flying capacitor three-level BOOST. In the technical route of the double-BOOST three-level circuit, if staggered wave sending is adopted, the common-mode current of the system is very large, in practical application, a synchronous wave sending control scheme is generally adopted, the inductance value is high, and even if a coupled inductor design is adopted, the defects of large inductor volume, high cost and the like under the same ripple current design still exist, so that the design and the set are inconvenient. Therefore, research at present mainly focuses on how to optimize the flying capacitor three-level BOOST circuit, but the dual-BOOST three-level circuit and the flying capacitor three-level circuit are designed based on the design idea that the output-side direct-current capacitors are directly connected in series, and the optimization of staggered wave sending and inductance value cannot be realized at the same time.
Disclosure of Invention
Therefore, the application provides a three-level BOOST device and a control method thereof, and aims to solve the problems that the existing three-level BOOST circuit cannot realize staggered wave sending and inductance value optimization at the same time, and the inductor has large volume and high equipment cost.
In order to achieve the purpose, the following technical scheme is adopted in the application:
in a first aspect, the present application provides a three-level BOOST device, a main circuit of the three-level BOOST device comprising: the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the first inductor, the second inductor, the first switch tube, the second switch tube, the third switch tube, the first diode and the second diode;
the first end of the first inductor is connected with the positive electrode of a power supply, and the second end of the first inductor is connected with a first node; a first end of the first capacitor is connected with a first node, and a second end of the first capacitor is connected with a third node; the first end of the first switch tube is connected with a first node, and the second end of the first switch tube is connected with a second node;
a first end of the second capacitor is connected with a second node, and a second end of the second capacitor is connected with a fourth node; a first end of the third capacitor is connected with a second node, and a second end of the third capacitor is connected with an output anode of the BOOST device; the first end of the second switching tube is connected with a second node, and the second end of the second switching tube is connected with a third node;
the first end of the third switching tube is connected with a third node, and the second end of the third switching tube is connected with a fourth node; a first end of the fourth capacitor is connected with a third node, and a second end of the fourth capacitor is connected with the output cathode of the BOOST device;
the anode of the first diode is connected with a first node, and the cathode of the first diode is connected with the output anode of the BOOST device; the anode of the second diode is connected with the output cathode of the BOOST device, and the cathode of the second diode is connected with a fourth node;
and the first end of the second inductor is connected with a fourth node, and the second end of the second inductor is connected with the negative electrode of the power supply.
Further, the first switch tube, the second switch tube and the third switch tube are all IGBTs.
Further, the conduction state of the second switching tube and the conduction state of the first switching tube and the third switching tube are mutually staggered.
Further, the duty ratio of the first switching tube and the third switching tube is the same.
Furthermore, the periods of the driving signals corresponding to the first switching tube and the third switching tube are the same.
The circuit further comprises a first current limiting element and a second current limiting element, wherein the first current limiting element is arranged on a circuit between the first capacitor and the first diode or between the first capacitor and the second switching tube; the second current limiting element is arranged on a circuit between the second capacitor and the second diode or between the second capacitor and the second switching tube.
Further, the first current limiting element and the second current limiting element are one or more of an inductor and a resistor.
In a second aspect, the present application provides a control method for a three-level BOOST device, where the control method is applied to the three-level BOOST device provided in the first aspect, and the control method includes:
s1: when the positive electrode and the negative electrode of the main circuit input end of the three-level BOOST device are electrified, controlling the first switching tube and the third switching tube to be simultaneously conducted, disconnecting the second switching tube, and pre-charging the first capacitor and the second capacitor respectively by using the voltage between the positive electrode and the negative electrode of the main circuit input end;
s2: adjusting the duty ratio of the first switching tube and the third switching tube to keep voltage balance between the first capacitor and the second capacitor;
s3: after the first capacitor and the second capacitor are precharged, controlling the first switching tube and the third switching tube to be disconnected, conducting the second switching tube, and precharging the third capacitor by using the voltage of the first capacitor and precharging the fourth capacitor by using the voltage of the second capacitor;
s4: and adjusting the duty ratio of the second switching tube to keep voltage balance between the first capacitor and the third capacitor and between the second capacitor and the fourth capacitor.
This application adopts above technical scheme, possesses following beneficial effect at least:
through the three-level BOOST device provided by the application, the main circuit of the three-level BOOST device comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first inductor, a first switch tube, a second switch tube, a third switch tube, a first diode and a second diode. The first end of the first inductor is connected with the positive electrode of a power supply, and the second end of the first inductor is connected with a first node; a first end of the first capacitor is connected with a first node, and a second end of the first capacitor is connected with a third node; the first end of the first switch tube is connected with a first node, and the second end of the first switch tube is connected with a second node;
a first end of the second capacitor is connected with a second node, and a second end of the second capacitor is connected with a fourth node; a first end of the third capacitor is connected with a second node, and a second end of the third capacitor is connected with an output anode of the BOOST device; the first end of the second switching tube is connected with a second node, and the second end of the second switching tube is connected with a third node;
the first end of the third switching tube is connected with a third node, and the second end of the third switching tube is connected with a fourth node; a first end of the fourth capacitor is connected with a third node, and a second end of the fourth capacitor is connected with the output cathode of the BOOST device;
the anode of the first diode is connected with a first node, and the cathode of the first diode is connected with the output anode of the BOOST device; the anode of the second diode is connected with the output cathode of the BOOST device, and the cathode of the second diode is connected with the fourth node; and the first end of the second inductor is connected with the fourth node, and the second end of the second inductor is connected with the negative electrode of the power supply. In the above main circuit structure, the device controls the first switch tube and the third switch tube to be conducted, the second switch tube is disconnected, the first capacitor and the second capacitor are precharged by using the voltage between the anode and the cathode of the input end of the main circuit, and simultaneously after the precharging of the first capacitor and the second capacitor is finished, the first switch tube and the third switch tube are disconnected and the second switch tube is connected, and the third capacitor and the fourth capacitor are precharged by using the voltages of the first capacitor and the second capacitor. This application scheme selects the mode that does not directly establish ties electric capacity at the high-pressure side to design three-level BOOST circuit structure, can realize crisscross ripples of sending out, can also reduce inductance ripple electric current simultaneously, reduces inductance value and equipment volume.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating a three-level BOOST device circuit configuration in accordance with an exemplary embodiment;
FIG. 2 is a schematic diagram illustrating the direction of a second capacitive precharge current in accordance with an exemplary embodiment;
FIG. 3 is a schematic diagram illustrating the direction of a first capacitive precharge current in accordance with one exemplary embodiment;
FIG. 4 is a schematic diagram illustrating the direction of a third capacitor precharge current in accordance with an exemplary embodiment;
FIG. 5 is a schematic diagram illustrating a direction of a fourth capacitor precharge current in accordance with an exemplary embodiment;
fig. 6 is a flowchart illustrating a method of controlling a three-level BOOST device according to an exemplary embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail below. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic diagram of a circuit configuration of a three-level BOOST device according to an exemplary embodiment, in which Udc is shown pv The terminal is the main circuit input terminal of the three-level BOOST device, the anode and the cathode of which are connected with the power supplyPositive and negative poles correspond to each other, udc bus The terminal is the output terminal of the main circuit of the three-level BOOST device, and the anode and the cathode of the terminal are connected with a load. As shown in fig. 1, the main circuit of the three-level BOOST device includes: the circuit comprises a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first inductor Lm1, a second inductor Lm2, a first switch tube S1, a second switch tube S2, a third switch tube S3, a first diode D1 and a second diode D2.
A first end of the first inductor Lm1 is connected to a positive electrode of a power supply, and a second end of the first inductor Lm1 is connected to a first node; a first end of the first capacitor C1 is connected with a first node, and a second end of the first capacitor C1 is connected with a third node; the first end of the first switch tube S1 is connected with a first node, and the second end of the first switch tube S1 is connected with a second node.
A first end of the second capacitor C2 is connected to a second node, and a second end of the second capacitor C2 is connected to a fourth node; a first end of the third capacitor C3 is connected to a second node, and a second end of the third capacitor C3 is connected to an output anode of the BOOST device; the first end of the second switch tube S2 is connected with the second node, and the second end of the second switch tube S2 is connected with the third node.
A first end of the third switching tube S3 is connected with a third node, and a second end of the third switching tube S3 is connected with a fourth node; a first end of the fourth capacitor C4 is connected to a third node, and a second end of the fourth capacitor C4 is connected to an output cathode of the BOOST device.
The anode of the first diode D1 is connected with a first node, and the cathode of the first diode D1 is connected with the output anode of the BOOST device; the anode of the second diode D2 is connected to the output cathode of the BOOST device, and the cathode of the second diode D2 is connected to the fourth node.
A first end of the second inductor Lm2 is connected to a fourth node, and a second end of the second inductor Lm2 is connected to a negative electrode of the power supply.
Further, in one embodiment, the first switching tube S1, the second switching tube S2 and the third switching tube S3 are all IGBTs. An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power Semiconductor device composed of a Bipolar Junction Transistor (BJT) and an Insulated Gate Field Effect Transistor (MOS), and has the advantages of both high input impedance of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and low conduction voltage drop of a power Transistor (GTR), and also has the advantages of small size, low conduction and low cost. According to the scheme, the IGBT is utilized to conduct the circuit, so that the size of equipment can be reduced, and the cost of the equipment can be reduced. In addition, other switching devices may be used to control the on/off of the circuit, which is not limited herein and is within the scope of the present application depending on the specific application environment.
Further, in one embodiment, the first switching tube S1, the second switching tube S2 and the third switching tube S3 are all IGBT devices. Therefore, in order to realize staggered wave generation, the conducting state of the second switching tube S2 and the conducting states of the first switching tube S1 and the third switching tube S3 are staggered with each other in the present application. Meanwhile, the duty ratios of the first switching tube S1 and the third switching tube S3 are the same, and the periods of the driving signals corresponding to the first switching tube S1 and the third switching tube S3 are the same.
Specifically, under the above circuit structure design, as shown in fig. 2, according to the present application, after the positive electrode and the negative electrode of the input end of the main circuit are charged, the second capacitor C2 can be pre-charged by controlling the on-off of the first switching tube S1, so that the voltage between the positive electrode and the negative electrode of the input end of the main circuit is used as the voltage when starting the machine.
Specifically, as shown in fig. 3, in the present application, the voltage between the positive electrode and the negative electrode of the input end of the main circuit is used as the first capacitor C1 to perform pre-charging by controlling the on/off of the third switching tube S3.
Specifically, as shown in fig. 4 and 5, according to the scheme of the present application, by controlling on/off of the second switching tube S2, the voltage of the first capacitor C1 is used as the third capacitor C3 for pre-charging, and the voltage of the second capacitor C2 is used as the fourth capacitor C4 for pre-charging. In fig. 2 to 5, the dotted line with an arrow indicates the current direction.
Further, in an embodiment, in the scheme of the present application, voltage equalization between the second capacitor C2 and the first capacitor C1 may be achieved by adjusting duty ratios of the first switching tube S1 and the third switching tube S3; the voltage balance of the first capacitor C1, the third capacitor C3, the second capacitor C2 and the fourth capacitor C4 can be realized by adjusting the duty ratio of the second switching tube S2. The duty ratios and the driving periods of the first switch tube S1, the second switch tube S2 and the third switch tube S3 can be set according to the capacities of the first capacitor C1, the second capacitor C2, the third capacitor C3 and the fourth capacitor C4, and only the voltage balance among the four capacitors needs to be satisfied, so that the limitation is not required, and the duty ratios and the driving periods are within the protection range of the application depending on the specific application environment.
Further, in one embodiment, the three-level BOOST device provided by the present disclosure for achieving smooth charging of the third capacitor C3 further includes a first current limiting element and a second current limiting element. The first current limiting element is arranged on a circuit between the first capacitor C1 and the first diode D1 or between the first capacitor C1 and the second switch tube S2; the second current limiting element is arranged on a circuit between the second capacitor C2 and the second diode D2 or between the second capacitor C2 and the second switching tube S2. The first current limiting element and the second current limiting element are one or more of an inductor and a resistor, and other current limiting components may also be used, which are not limited herein and are within the protection scope of the present application depending on the specific application environment.
Referring to fig. 6, the present application further provides a control method of a three-level BOOST device, where the control method is applied to the three-level BOOST device provided in the present application, and the control method includes:
s1: when the positive electrode and the negative electrode of the main circuit input end of the three-level BOOST device are electrified, controlling the first switching tube S1 and the third switching tube S3 to be simultaneously conducted, disconnecting the second switching tube S2, and pre-charging the first capacitor C1 and the second capacitor C2 respectively by using the voltage between the positive electrode and the negative electrode of the main circuit input end;
s2: adjusting the duty ratio of the first switching tube S1 and the third switching tube S3 to keep voltage balance between the first capacitor C1 and the second capacitor C2;
s3: after the first capacitor C1 and the second capacitor C2 are precharged, controlling the first switching tube S1 and the third switching tube S3 to be disconnected, conducting the second switching tube S2, and precharging the third capacitor C3 by using the voltage of the first capacitor C1 and precharging the fourth capacitor C4 by using the voltage of the second capacitor C2;
s4: and adjusting the duty ratio of the second switching tube S2 to keep the voltage balance between the first capacitor C1 and the third capacitor C3 and between the second capacitor C2 and the fourth capacitor C4.
According to the scheme, the three-level BOOST circuit structure is designed in a mode that the capacitor is not directly connected in series on the high-voltage side, and meanwhile, the conduction states and the duty ratios of the first switching tube S1, the second switching tube S2 and the third switching tube S3 are controlled and adjusted respectively. The staggered wave generation can be realized, the ripple current of the inductor can be reduced, and the inductance value and the equipment volume are reduced.
It is understood that the same or similar parts in the above embodiments may be mutually referred to, and the same or similar contents in other embodiments may be referred to for the contents which are not described in detail in some embodiments.
It should be noted that, in the description of the present application, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In addition, in the description of the present application, the meaning of "plurality" means at least two unless otherwise specified.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present; when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present, and further, as used herein, connected may include wirelessly connected; the term "and/or" is used to include any and all combinations of one or more of the associated listed items.
Any process or method descriptions in flow charts or otherwise described herein may be understood as: represents modules, segments or portions of code which include one or more executable instructions for implementing specific logical functions or steps of a process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the embodiments of the present application.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following technologies, which are well known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried out in the method of implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and the program, when executed, includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (8)
1. A three-level BOOST device, wherein a main circuit of the three-level BOOST device comprises: the circuit comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first inductor, a second inductor, a first switching tube, a second switching tube, a third switching tube, a first diode and a second diode;
the first end of the first inductor is connected with the positive electrode of a power supply, and the second end of the first inductor is connected with a first node; a first end of the first capacitor is connected with a first node, and a second end of the first capacitor is connected with a third node; the first end of the first switch tube is connected with a first node, and the second end of the first switch tube is connected with a second node;
a first end of the second capacitor is connected with a second node, and a second end of the second capacitor is connected with a fourth node; a first end of the third capacitor is connected with a second node, and a second end of the third capacitor is connected with an output anode of the BOOST device; the first end of the second switch tube is connected with a second node, and the second end of the second switch tube is connected with a third node;
the first end of the third switching tube is connected with a third node, and the second end of the third switching tube is connected with a fourth node; a first end of the fourth capacitor is connected with a third node, and a second end of the fourth capacitor is connected with the output cathode of the BOOST device;
the anode of the first diode is connected with a first node, and the cathode of the first diode is connected with the output anode of the BOOST device; the anode of the second diode is connected with the output cathode of the BOOST device, and the cathode of the second diode is connected with a fourth node;
and the first end of the second inductor is connected with a fourth node, and the second end of the second inductor is connected with the negative electrode of the power supply.
2. The three-level BOOST device according to claim 1, wherein said first switch tube, said second switch tube and said third switch tube are all IGBTs.
3. The device of claim 1, wherein the conducting states of the second switch and the first switch and the third switch are staggered.
4. The three-level BOOST device as claimed in claim 1, wherein the duty cycle of the first switch tube is the same as that of the third switch tube.
5. The device of claim 1, wherein the first switch and the third switch have the same period of the driving signal.
6. The device of claim 1, further comprising a first current limiting element and a second current limiting element, wherein the first current limiting element is disposed in a circuit between the first capacitor and the first diode or between the first capacitor and the second switch tube; the second current limiting element is arranged on a circuit between the second capacitor and the second diode or between the second capacitor and the second switching tube.
7. The three-level BOOST device according to claim 6, wherein said first current limiting element and said second current limiting element are both one or more of an inductor and a resistor.
8. A control method of a three-level BOOST device, characterized in that the control method is applied to a three-level BOOST device as claimed in any one of claims 1-7, the control method comprising:
s1: when the positive electrode and the negative electrode of the main circuit input end of the three-level BOOST device are electrified, controlling the first switching tube and the third switching tube to be simultaneously conducted, disconnecting the second switching tube, and pre-charging the first capacitor and the second capacitor respectively by using the voltage between the positive electrode and the negative electrode of the main circuit input end;
s2: adjusting the duty ratio of the first switching tube and the third switching tube to keep the voltage balance between the first capacitor and the second capacitor;
s3: after the first capacitor and the second capacitor are precharged, controlling the first switching tube and the third switching tube to be disconnected, conducting the second switching tube, and precharging the third capacitor by using the voltage of the first capacitor and precharging the fourth capacitor by using the voltage of the second capacitor;
s4: and adjusting the duty ratio of the second switching tube to keep voltage balance between the first capacitor and the third capacitor and between the second capacitor and the fourth capacitor.
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| CN202211388224.5A CN115694175A (en) | 2022-11-08 | 2022-11-08 | Three-level BOOST device and control method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116526875A (en) * | 2023-06-25 | 2023-08-01 | 广东省洛仑兹技术股份有限公司 | Method and device for generating driving signal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116526875A (en) * | 2023-06-25 | 2023-08-01 | 广东省洛仑兹技术股份有限公司 | Method and device for generating driving signal |
| CN116526875B (en) * | 2023-06-25 | 2024-04-12 | 广东省洛仑兹技术股份有限公司 | Method and device for generating driving signal |
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