CN115691649A

CN115691649A - NAND particle processing method and device and storage product

Info

Publication number: CN115691649A
Application number: CN202211360455.5A
Authority: CN
Inventors: 关天晗; 何姣阳; 杨锐
Original assignee: Jiangsu Xinsheng Intelligent Technology Co ltd
Current assignee: Jiangsu Xinsheng Intelligent Technology Co ltd
Priority date: 2022-11-02
Filing date: 2022-11-02
Publication date: 2023-02-03

Abstract

The embodiment of the application provides a NAND particle processing method, a NAND particle processing device and a storage product, and belongs to the technical field of storage, wherein the method comprises the following steps: screening a plurality of NAND particles meeting a first temperature specification from the plurality of Lots according to Die coverage characteristics; and performing a performance test of a second temperature specification on each NAND particle, and determining target NAND particles meeting the second temperature specification from a plurality of NAND particles according to the test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification. Therefore, the NAND particles meeting the second temperature specification are obtained by screening the NAND particles meeting the first temperature specification, and the development period and the production cost of the NAND particles meeting the second temperature specification are effectively reduced.

Description

NAND particle processing method and device and storage product

Technical Field

The present application relates to the field of storage technologies, and in particular, to a method and an apparatus for processing NAND particles, and a storage product.

Background

The most commonly used at present are standard-temperature NAND particles, as opposed to wide-temperature NAND particles, where standard-temperature NAND particles refer to NAND particles used in a temperature range of 0 to 70 ℃, and the temperature range of wide-temperature NAND particles is wider than the standard temperature, for example, the temperature range of the wide-temperature particles of the industrial scale is as follows: -40 to 85 ℃. The wide-temperature NAND particles are more widely used and are more and more accepted by the market. But the price of the wide-temperature NAND particles with the same generation number is more expensive than that of the standard-temperature NAND particles, so that the exploration of the wide-temperature application of the standard-temperature NAND particles is valuable. In addition, the original manufacturer generally leaves a certain margin on the specification of the NAND particles, so the wide-temperature particles can further explore the ultra-wide temperature application, for example, the wide-temperature specification of the manufacturer of the industrial-scale particles is-40-85 ℃, and the ultra-wide temperature application of-50-100 ℃ can be further explored. In summary, it is needed to provide an application scheme of the NAND particles with the specification exceeding the temperature, find the application limit of the NAND particles, and find greater product value.

Disclosure of Invention

In order to solve the above technical problem, embodiments of the present application provide a method and an apparatus for processing NAND particles, and a storage product.

In a first aspect, an embodiment of the present application provides a method for processing NAND particles, where the method includes:

screening a plurality of NAND particles meeting a first temperature specification from a plurality of Lots according to Die coverage characteristics;

and performing a performance test of a second temperature specification on each NAND particle, and determining target NAND particles meeting the second temperature specification from a plurality of NAND particles according to the test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification.

In a second aspect, an embodiment of the present application provides a method for applying a NAND particle, where the method includes:

and setting target NAND particles on the initial storage product to obtain a target storage product meeting a second temperature specification, wherein the target NAND particles are obtained according to the NAND particle processing method provided by the first aspect.

In a third aspect, an embodiment of the present application provides an apparatus for processing NAND particles, the apparatus including:

the screening module is used for screening a plurality of NAND particles meeting a first temperature specification from a plurality of Lots according to Die coverage characteristics;

and the determining module is used for performing a performance test of a second temperature specification on each NAND particle, and determining a target NAND particle meeting the second temperature specification from a plurality of NAND particles according to a test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification.

In a fourth aspect, an embodiment of the present application provides a device for applying NAND particles, the device including:

and the setting module is used for setting target NAND particles on the initial storage product to obtain a target storage product meeting the second temperature specification, wherein the target NAND particles are determined according to the NAND particle processing method provided by the first aspect.

In a fifth aspect, an embodiment of the present application provides a storage product, which includes a target NAND particle determined according to the NAND particle processing method provided in the first aspect.

According to the NAND particle processing method, the NAND particle processing device and the storage product, a plurality of NAND particles meeting a first temperature specification are screened from a plurality of Lots according to Die coverage characteristics; and performing a performance test of a second temperature specification on each NAND particle, and determining target NAND particles meeting the second temperature specification from a plurality of NAND particles according to the test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification. Therefore, the NAND particles meeting the second temperature specification are obtained by screening the NAND particles meeting the first temperature specification, and the research and development period and the production cost of the NAND particles meeting the second temperature specification are effectively reduced.

Drawings

In order to more clearly explain the technical solutions of the present application, the drawings needed to be used in the embodiments are briefly introduced below, and it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope of protection of the present application. Like components are numbered similarly in the various figures.

FIG. 1 is a schematic flow chart of a NAND particle processing method provided by an embodiment of the present application;

FIG. 2 is a flow chart of an application method of the NAND particles provided by the embodiment of the application;

fig. 3 is a schematic structural diagram illustrating a processing apparatus for NAND particles provided in an embodiment of the present application;

fig. 4 shows a schematic structural diagram of an application apparatus of NAND particles provided in the embodiments of the present application.

Icon: 300-a device for handling NAND particles; 301-a screening module; 302-a determination module; 400-application device of NAND particles; 401-setup module.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.

The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.

Hereinafter, the terms "including", "having", and their derivatives, which may be used in various embodiments of the present application, are intended to indicate only specific features, numbers, steps, operations, elements, components, or combinations of the foregoing, and should not be construed as first excluding the existence of, or adding to, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.

Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of the present application belong. The terms (such as terms defined in a commonly used dictionary) will be construed to have the same meaning as the contextual meaning in the related art and will not be construed to have an idealized or overly formal meaning unless expressly so defined in various embodiments of the present application.

At present, the production processes of wide-temperature NAND particles and standard-temperature NAND particles in the same generation and time in the original factory are basically the same, and the difference is that the wide-temperature NAND particles have special Trim parameters and are subjected to more strict test screening. The wide-temperature NAND particles of the original factory are particles with wide-temperature application capability screened out through Trim parameter adjustment and stricter tests on the basis of the production process of standard-temperature NAND particles of the same generation. Therefore, essentially, the temperature-marked NAND particles also have certain wide-temperature application potential. For example, industrial-grade NAND particles (use temperature range: -40-85 ℃), have the following effects: (1) The development period of the wide-temperature NAND particles of the same generation is longer than that of the standard-temperature NAND particles and needs about 6 months, (2) the price of the wide-temperature NAND particles is obviously higher than that of the standard-temperature NAND particles by about 15%, and the market share and profit margin are influenced by the long development period and the high price. In summary, it is needed to provide an application scheme of the NAND particles with the specification exceeding the temperature, find the application limit of the NAND particles, and find greater product value.

Example 1

The embodiment of the application provides a processing method of NAND particles. The method can screen the NAND particles meeting the second temperature specification from the NAND particles meeting the first temperature specification, and effectively reduces the research and development period and production cost of the NAND particles meeting the second temperature specification.

Referring to FIG. 1, the method of processing NAND particles includes steps S101-S102, which are described below.

Step S101, screening a plurality of NAND particles meeting a first temperature specification from a plurality of Lots according to Die coverage characteristics.

In this embodiment, the NAND particles are 3D NAND, and the pattern thereof may include: SLC, (p) MLC, TLC, QLC, PLC. SLC (Single-Level Cell) means that 1Cell stores 1bit data. MLC (Multi-Level Cell) means 1Cell stores 2-bit data. TLC (Trinary-Level Cell) means that 1Cell stores 3-bit data. QLC indicates that 1Cell stores 4bit data. PLC means 1Cell stores 5bit data. pMLC (Pseudo-Multi-Level Cell) represents a mode in which TLC is used as MLC.

In this embodiment, the first temperature specification may be a standard temperature specification or a wide temperature specification, the standard temperature specification may be a 0-70 ℃ temperature specification, and the wide temperature specification may be classified as a-40-85 ℃ temperature specification. Taking the example of a 3D 128-layer TLC NAND standard temperature particle, it can be erased and written in SLC, pMLC and TLC modes. Accordingly, the data reliability in SLC mode is higher than pMLC, and the data reliability in pMLC mode is higher than TLC. For NAND standard temperature (0-70 ℃) particles of the 3D 128-layer TLC mode, the potential of wide temperature (-40-85 ℃) in different modes is also different. In general, the wide temperature potential is greatest in SLC mode, second order in pMLC mode, and worst for TLC.

In general, 25 wafers are packaged into one Lot. Wafer denotes Wafer. 3D NAND is most commonly a 300mm wafer, and typically about 1000 Dies are available for a 300mm wafer. Where Die represents the minimum unit that can independently execute commands and report status. For example, the NAND particles are selected from a plurality of Lot, die of the selected NAND particles covers the Wafer areas more uniformly, and further, the NAND particles can be selected with emphasis on covering Wafer weak areas.

Step S102, performing a performance test of a second temperature specification on each NAND particle, and determining a target NAND particle meeting the second temperature specification from a plurality of NAND particles according to a test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification.

In this embodiment, the second temperature specification may be a wide temperature specification or a super wide temperature specification, the wide temperature specification may be a temperature specification of-40 to 85 ℃, and the super wide temperature specification may be a temperature specification of-50 to 100 ℃.

If the first temperature specification is a standard temperature specification, the second temperature specification is a wide temperature specification or an ultra-wide temperature specification. If the first temperature specification is a wide temperature specification, the second temperature specification is an ultra-wide temperature specification. The first temperature range of the first temperature specification is a proper subset of the second temperature range of the second temperature specification, so that the target NAND particles obtained through screening can have good over-temperature application capability.

In one embodiment, step S102 includes:

performing stability test on each NAND particle in the second temperature range to obtain a stability evaluation result of each NAND particle;

determining target NAND particles, from among the plurality of NAND particles, for which a stability evaluation result belongs to a preset stability range.

In this embodiment, the stability test may include a high-Temperature write and low-Temperature read, a low-Temperature write and high-Temperature read (Cross Temperature) test and/or a Program-Erase (Program-Erase) wear test, so as to obtain a stability evaluation result of each NAND particle, and determine whether each NAND can meet the performance requirement of the second Temperature specification according to the stability evaluation result.

In one embodiment, the performing the stability test on each NAND particle in the second temperature range to obtain the stability evaluation result of each NAND particle includes:

performing high-temperature writing and low-temperature reading and low-temperature writing and high-temperature reading tests on the NAND particles in the second temperature range to obtain the erasing and reading failure proportion and the page-out dislocation counts of the NAND particles, and determining the erasing and reading failure proportion and the page-out dislocation counts of the NAND particles as the stability evaluation result;

the determining of the target NAND particles having the stability evaluation result belonging to the preset stability range from the plurality of NAND particles includes:

and determining target NAND particles with an erasing and reading failure ratio smaller than or equal to a preset failure threshold value and/or a difference of page out dislocation counts smaller than or equal to a set difference threshold value from a plurality of NAND particles.

For example, if the NAND particles are multiple NAND standard temperature particles, high-temperature writing and low-temperature reading at-40 ℃ and 85 ℃ and low-temperature writing and high-temperature reading tests can be performed on all Die of the NAND standard temperature particles, and whether erasing and reading failure occurs, whether a Fail Bit Count (FBC) is stable, whether Block screening is required, and the like are determined according to test results.

Exemplarily, a preset failure threshold value can be preset according to specific needs, if the erasing and writing failure rate is smaller than the preset failure threshold value, the NAND judgment can be used for the second temperature specification, and the wide temperature analysis can be continued; and if the erasing and writing read failure rate is larger than or equal to a preset failure threshold value, judging that the NAND particles cannot be applied to the wide temperature specification.

Furthermore, high-temperature writing and low-temperature reading at-40 ℃ and 85 ℃ and low-temperature writing and high-temperature reading tests are carried out for multiple times under the same conditions, and whether the dislocation counts of the pages (pages) of the NAND particles are stable or not is judged, namely whether the difference value of the dislocation counts of the pages (pages) of the NAND particles is larger than the set difference threshold value or not is judged. Where a page is made up of multiple cells, the page is the smallest addressable unit that performs a read operation.

And if the difference value of the dislocation counts of a plurality of pages (pages) of each NAND particle is larger than the set difference threshold value, judging that the NAND particles cannot be applied to the wide temperature specification.

In an embodiment, the method further comprises:

performing high-temperature writing and low-temperature reading and low-temperature writing and high-temperature reading tests on the blocks of the target NAND particles in the second temperature range to obtain the dislocation count of the blocks of the target NAND particles;

and determining bad blocks with dislocation counts larger than a preset dislocation count threshold value from all blocks of the target NAND particles according to the master control error correction capability and the preset Block sieving coefficient.

It should be noted that Block represents a Block, and is composed of a plurality of pages, and is the smallest addressable unit of an erase operation.

Exemplarily, the dislocation count distribution of each NAND particle is obtained through multiple high-temperature writing and low-temperature reading tests at-40/85 ℃, and whether a Block with larger dislocation count needs to be screened out or not is judged according to the master control error correction capability. And marking the Block with the dislocation count larger than the preset dislocation count threshold as a Bad (Bad) Block through the set Block coefficient.

It should be noted that, each Die generally has several thousand blocks, and it takes too long to perform all the erasure tests. Therefore, a representative Block can be selected from each Die for the erasure test.

In one embodiment, the performing the high-temperature writing and low-temperature writing and high-temperature reading test on each NAND particle in the second temperature range includes:

dividing the plurality of NAND particles into a plurality of NAND particle groups, and allocating corresponding target temperatures to the NAND particle groups, wherein each target temperature comprises an end point temperature of the second temperature range;

respectively allocating a plurality of Block groups of each NAND particle group to corresponding erasing and writing rounds, wherein the plurality of Block groups of each NAND particle are obtained by dividing according to the plurality of blocks of each NAND particle, and the plurality of blocks of each NAND particle are obtained by screening from each Die of each NAND particle group according to preset Block distribution characteristics;

and performing an erasing and writing wear test of corresponding erasing and writing rounds on each Block of each NAND particle at the target temperature of each NAND particle, and performing a high-temperature writing low-temperature reading test and a low-temperature writing high-temperature reading test on each Block of each NAND particle which is subjected to the erasing and writing wear test.

For example, if the plurality of NAND particles are N NAND temperature-indicating particles, first, the N NAND temperature-indicating particles are equally divided into M groups, and each group of NAND particles is respectively allocated to different environmental temperatures within a wide temperature range for an erasure wear test, where the environmental temperatures for the erasure test must include-40 ℃ and 85 ℃, and other temperature points may be matched as needed. Secondly, selecting representative blocks for all Die of the NAND standard temperature particles under different environmental temperatures, wherein the representative blocks can be blocks with higher quality determined according to experience, dividing the selected blocks into S groups, and respectively allocating each group of blocks to different erasing and writing rounds (PE cycles). And finally, observing test results such as whether the selected blocks have erasing, writing and reading failures under different environmental temperatures and different erasing and writing rounds. Specifically, blocks under different environmental temperatures and different erasing and writing rounds are subjected to-40/85 ℃ high-temperature writing and low-temperature reading under the same conditions for multiple times, and a low-temperature writing and high-temperature reading test is carried out to judge whether the page-out dislocation counts of the blocks are stable, namely whether the difference values of the page-out dislocation counts of the blocks are larger than a preset difference threshold value is judged. If the difference value of the page-out dislocation counts of a Block is larger than a preset difference threshold value, the NAND temperature marking particle where the Block is located cannot be suitable for the wide temperature specification. And if the difference values of the page-out dislocation counts of all blocks of a certain NAND temperature marking particle are less than or equal to a preset difference threshold, judging that the NAND temperature marking particle is suitable for the wide temperature specification.

In an embodiment, the method further comprises:

under the second temperature range, respectively performing data storage test and read interference test on each Block of each NAND particle which completes the erasing and writing wear test to obtain a data storage test result and a read interference test result of each Block of each NAND particle;

and determining the maximum erasing and writing round of each NAND particle in the second temperature range according to the data storage test result and the read interference test result of each Block of each NAND particle.

Exemplarily, a Data Retention (Data Retention) test is performed on each Block of each NAND temperature calibration particle which completes the erasure test by distinguishing Open Block from Close Block. The data keeping specification can be adjusted according to the original factory specification or according to actual needs. The data retention test was performed as follows in table 1 below:

TABLE 1

Where "-40 ℃ Program HTDR-40 ℃ Best Read" indicates that the Block is written at-40 ℃ and the data is stored for a period of time at a temperature and Read at-40 ℃ using the theoretically Best Read voltage.

"-40 ℃ Program HTDR 85 ℃ Best Read" indicates that the Block is written at-40 ℃ and the data is stored for a period of time at a temperature of-85 ℃ and Read using the theoretically Best Read voltage.

"85 ℃ Program HTDR-40 ℃ Best Read" means that Block is written at 85 ℃ and data is stored for a period of time at a temperature and Read at-40 ℃ using the theoretically Best Read voltage.

"85 ℃ Program HTDR 85 ℃ Best Read" indicates that Block is written at 85 ℃ and data is stored for a period of time at a temperature and Read at 85 ℃ using the theoretically Best Read voltage.

And (3) integrating the test results, and determining the maximum erasing and writing frequency of the NAND temperature marking particles under the wide temperature condition on the premise of meeting the data retention specification of the main control error correction capability and the requirement when the Best Read voltage (Best Read) is used.

And distinguishing a Block Read disturbance (Read disturbance) and a Single Page Read disturbance (Single Page Read disturbance) for each Block of each NAND temperature calibration particle which finishes the erasing and writing wear test. The read disturb specification can be referenced to the original factory specification or adjusted according to actual needs. The read disturb test was performed as follows in table 2:

TABLE 2

"-40 ℃ Program Read Disturb-40 ℃ Best Read" means write to Block at-40 ℃ Read Disturb the data for a certain time at a certain temperature and Read at-40 ℃ using the theoretically Best Read voltage.

"-40 ℃ Program Read Disturb 85 ℃ Best Read" indicates that Block is written at-40 ℃ and data is Read at 85 ℃ with the theoretically Best Read voltage for a Read Disturb period at a certain temperature.

"85 ℃ Program Read Disturb-40 ℃ Best Read" means that the Block is written at 85 ℃ and the data is Read with Read Disturb for a period of time at a temperature of-40 ℃ using the theoretically Best Read voltage.

"85 ℃ Program Read Disturb 85 ℃ Best Read" means that Block is written at 85 ℃ and data is Read at 85 ℃ with Read Disturb for a period of time at a temperature that is theoretically optimal for reading.

And (3) combining all test results, and under the premise of meeting the main control error correction capability and the required Read interference specification when using Best Read, the maximum erasing and writing frequency of the NAND temperature marking particles can be reached under the wide temperature condition.

Combining the two maximum erasing and writing rounds obtained in the previous step, under the premise of meeting the data retention specification of the main control error correction capability and the requirement, the maximum erasing and writing round which the NAND standard temperature particles can reach under the wide temperature condition, and under the premise of meeting the read interference specification of the main control error correction capability and the requirement, the smaller value of the maximum erasing and writing round which the NAND standard temperature particles can reach under the wide temperature condition is determined to be used as the maximum erasing and writing round of the NAND standard temperature particles under the wide temperature condition.

Therefore, the maximum erasing and writing times of the NAND standard-temperature particles can be obtained preliminarily by integrating all the test results on the premise of meeting wide-temperature environment conditions, data storage specifications, reading interference specifications and the like.

In an embodiment, the method further comprises:

and under the second temperature range, acquiring a simulation test scene of the target NAND, and performing a performance test of the second temperature specification on the target NAND according to the simulation test scene to obtain an over-temperature specification performance result of the target NAND particles.

In this embodiment, a real scene is used for simulating wide temperature, simulation test scenes such as Block in an erasing and writing specification range, random superposition temperature variation, data retention test, read interference test and the like are tested, and the wide temperature performance of the NAND standard temperature particles is tested, so as to finally obtain whether the NAND standard temperature particles support the use in the wide temperature environment, and the maximum erasing and writing frequency which can be reached by the NAND standard temperature particles is met on the premise of meeting various specifications.

According to the processing method of the NAND particles, a plurality of NAND particles meeting a first temperature specification are screened from a plurality of Lots according to Die coverage characteristics; and performing a performance test of a second temperature specification on each NAND particle, and determining target NAND particles meeting the second temperature specification from a plurality of NAND particles according to the test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification. Therefore, the NAND particles meeting the second temperature specification are obtained by screening the NAND particles meeting the first temperature specification, and the development period and the production cost of the NAND particles meeting the second temperature specification are effectively reduced.

Example 2

The embodiment of the application provides an application method of NAND particles.

Referring to fig. 2, the method of applying the nand particles includes step S201, and the steps are explained below.

Step S201, setting target NAND particles on the initial storage product to obtain a target storage product meeting the second temperature specification, where the target NAND particles are determined according to the NAND particle processing method provided in embodiment 1.

In this embodiment, the target NAND particle is determined according to the NAND particle processing method provided in embodiment 1, and for details, reference may be made to the relevant description of embodiment 1, and details are not repeated here to avoid repetition. The initial storage product may be a Solid State Disk (SSD). The target NAND particles are arranged on the target storage product and meet the second temperature specification, so that the target storage product also meets the second temperature specification, and the production period and the cost for producing the storage product meeting the second temperature specification can be reduced.

In an embodiment, the method further comprises:

determining Die located in a quality weak area in the target NAND particles as a first type Die meeting a first temperature specification;

and determining the Die positioned in the quality robust area in the NAND particles as a second class Die of a second temperature specification.

Illustratively, if Die of the Wafer upper part quality weak area of the target NAND particle is used as the Die of the first type meeting the first temperature specification, the Die of the quality weak area may be Edge Die, and the Die of the first type is not used as the wide temperature particle and can be used as the standard temperature particle. Die located in the quality robust region may be Die other than edge Die. The second class of Die can be used as a wide temperature particle.

In one embodiment, the method further comprises:

and screening the target NAND particles according to the Block screening coefficient to obtain a weak Block, and determining the weak Block as a bad Block or setting the mode of the weak Block as a high-reliability mode.

And screening Weak (Weak) blocks for target NAND particles in the production stage according to the pre-obtained Block screening coefficients. Or, according to a part of fixed weak blocks found in experiments, blocks at corresponding positions in the target NAND grain are directly marked as bad blocks, or, according to the part of fixed weak blocks, blocks at corresponding positions in the target NAND grain are used in a mode with higher reliability (such as SLC).

In one embodiment, the method further comprises:

and under the second temperature range, acquiring a simulation test scene of the target storage product, and performing a performance test of the second temperature specification on the target storage product according to the simulation test scene to obtain an over-temperature specification performance result of the target storage product.

In this embodiment, a real use scenario of the over-temperature specification of the target storage product is simulated for testing, if the over-temperature specification performance result of the target storage product is better, the target storage product is used as a product with qualified quality, and if the over-temperature specification performance result of the target storage product is poorer, the target storage product is used as a product with unqualified quality, so as to ensure the quality of the target storage product.

In addition, the embodiment of the application provides an application method of the NAND particles, the target NAND particles are arranged on the initial storage product, and the target storage product meeting the second temperature specification is obtained, and the target NAND particles are determined according to the processing method of the NAND particles provided in embodiment 1. Therefore, the target storage product is an over-temperature specification product, the quality and the reliability of the over-temperature specification storage product can be guaranteed, and the production period and the cost of the over-temperature specification product are reduced.

Example 3

In addition, the embodiment of the application provides a device for processing NAND particles.

As shown in fig. 3, the NAND particle processing apparatus 300 includes:

the screening module 301 is configured to screen a plurality of NAND particles meeting a first temperature specification from the plurality of lots according to Die coverage characteristics;

a determining module 302, configured to perform a performance test of a second temperature specification on each NAND particle, and determine, according to a test result, a target NAND particle that meets the second temperature specification from among a plurality of NAND particles, where a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification.

In an embodiment, the determining module 302 is further configured to perform a stability test on each NAND particle in the second temperature range to obtain a stability evaluation result of each NAND particle;

determining a target NAND particle having a stability evaluation result belonging to a preset stability range from among a plurality of the NAND particles.

In an embodiment, the determining module 302 is further configured to perform high-temperature write and low-temperature read and low-temperature write and high-temperature read tests on each NAND particle in the second temperature range to obtain an erasure-write-read failure ratio and a plurality of page-out dislocation counts of each NAND particle, and determine the erasure-write-read failure ratio and the plurality of page-out dislocation counts of each NAND particle as the stability evaluation result;

In one embodiment, the NAND particle processing apparatus 300 further includes:

the processing module is used for carrying out high-temperature writing and low-temperature reading and low-temperature writing and high-temperature reading tests on each Block of the target NAND particles in the second temperature range to obtain the dislocation count of each Block of the target NAND particles;

In an embodiment, the determining module 302 is further configured to divide the plurality of NAND particles into a plurality of NAND particle groups, and assign a corresponding target temperature to each NAND particle group, where each target temperature includes an end point temperature of the second temperature range;

allocating a plurality of Block groups of each NAND particle group to corresponding erasing and writing rounds respectively, wherein the plurality of Block groups of each NAND particle are obtained by dividing according to the plurality of blocks of each NAND particle, and the plurality of blocks of each NAND particle are obtained by screening from each Die of each NAND particle group according to preset Block distribution characteristics;

and performing an erasing and writing wear test of corresponding erasing and writing rounds on each Block of each NAND particle at the target temperature of each NAND particle, and performing a high-temperature writing and low-temperature reading test and a low-temperature writing and high-temperature reading test on each Block of each NAND particle subjected to the erasing and writing wear test respectively to obtain the erasing and reading failure proportion and a plurality of page dislocation counts of each NAND particle.

In an embodiment, the processing module is further configured to perform a data saving test and a read interference test on each Block of each NAND particle that has completed the erasure wear test, respectively, in the second temperature range, so as to obtain a data saving test result and a read interference test result of each Block of each NAND particle;

In an embodiment, the processing module is further configured to obtain a simulation test scenario of the target NAND in the second temperature range, and perform a performance test of the second temperature specification on the target NAND according to the simulation test scenario to obtain an over-temperature specification performance result of the target NAND particles.

The processing apparatus 300 for NAND particles provided in this embodiment can implement the processing method for NAND particles provided in embodiment 1, and is not described herein again to avoid repetition.

According to the processing device of the NAND particles, a plurality of NAND particles meeting a first temperature specification are screened from a plurality of Lots according to Die coverage characteristics; and performing a performance test of a second temperature specification on each NAND particle, and determining target NAND particles meeting the second temperature specification from a plurality of NAND particles according to the test result, wherein a first temperature range of the first temperature specification is a proper subset of a second temperature range of the second temperature specification. Therefore, the NAND particles meeting the second temperature specification are obtained by screening the NAND particles meeting the first temperature specification, and the development period and the production cost of the NAND particles meeting the second temperature specification are effectively reduced.

Example 4

In addition, the embodiment of the application provides an application device of the NAND particles.

As shown in fig. 4, the application apparatus 400 of NAND particles includes:

a setting module 401, configured to set a target NAND particle on the initial storage product, so as to obtain a target storage product meeting the second temperature specification, where the target NAND particle is determined according to the NAND particle processing method provided in embodiment 1.

In one embodiment, the NAND particle application apparatus 400 further comprises:

a first processing module, configured to determine Die located in a quality weak area in the target NAND grain as a first type Die meeting a first temperature specification;

In one embodiment, the application apparatus 400 of NAND particles further comprises:

and the second processing module is used for screening a weak Block from the target NAND particles according to the Block screening coefficient, and determining the weak Block as a bad Block or setting the mode of the weak Block as a high-reliability mode.

and the third processing module is used for acquiring a simulation test scene of the target storage product in the second temperature range, and performing the performance test of the second temperature specification on the target storage product according to the simulation test scene to obtain the over-temperature specification performance result of the target storage product.

The application apparatus 400 of NAND particles provided in this embodiment can implement the application method of NAND particles provided in embodiment 2, and is not described herein again to avoid repetition.

The processing apparatus for NAND particles provided in this embodiment sets the target NAND particles on the initial storage product, and obtains the target storage product meeting the second temperature specification, where the target NAND particles are determined according to the processing method for NAND particles provided in embodiment 1. Therefore, the target storage product is an over-temperature specification product, the quality and the reliability of the over-temperature specification storage product can be guaranteed, and the production period and the cost of the over-temperature specification product are reduced.

Example 5

In addition, embodiments of the present application provide a storage product including target NAND particles determined according to the NAND particle processing method provided in embodiment 1.

In this embodiment, the storage product may be a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising a component of' 8230; \8230;" does not exclude the presence of additional like elements in the process, method, article, or terminal that comprises the element.

Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present application.

While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A method of processing NAND particles, the method comprising:

screening a plurality of NAND particles meeting a first temperature specification from the plurality of Lots according to Die coverage characteristics;

2. The method of claim 1, wherein performing a performance test of a second temperature specification on each NAND die and determining a target NAND die from the plurality of NAND dies that meets the second temperature specification based on the test results comprises:

3. The method of claim 2, wherein the stability testing of each NAND particle at the second temperature range to obtain the stability evaluation result of each NAND particle comprises:

performing high-temperature writing and low-temperature reading and low-temperature writing and high-temperature reading tests on the NAND particles in the second temperature range to obtain an erasing and reading failure proportion and a plurality of page-out dislocation counts of the NAND particles, and determining the erasing and reading failure proportion and the page-out dislocation counts of the NAND particles as the stability evaluation result;

the determining of a target NAND particle having a stability evaluation result belonging to a preset stability range from among a plurality of the NAND particles, includes:

determining target NAND particles from the plurality of NAND particles with an erase-read failure ratio less than or equal to a preset failure threshold value and/or a difference in page-out error counts less than or equal to a set difference threshold value.

4. The method of claim 1, further comprising:

performing high-temperature writing and low-temperature writing and high-temperature reading tests on each Block of the target NAND particles in the second temperature range to obtain the dislocation count of each Block of the target NAND particles;

5. The method according to claim 3, wherein performing the high-temperature-writing low-temperature-reading and low-temperature-writing high-temperature-reading tests on the NAND particles in the second temperature range comprises:

dividing the plurality of NAND particles into a plurality of NAND particle groups, and allocating corresponding target temperatures to the NAND particle groups, wherein each target temperature comprises an endpoint temperature of the second temperature range;

6. The method of claim 5, further comprising:

7. The method according to any one of claims 1-6, further comprising:

8. A method of applying NAND particles, the method comprising:

setting target NAND particles on the initial storage product, resulting in a target storage product meeting the second temperature specification, the target NAND particles being determined according to the method for processing NAND particles as claimed in any one of claims 1 to 7.

9. The method of claim 8, further comprising:

10. The method of claim 9, further comprising:

and screening a weak Block from the target NAND particles according to the Block screening coefficient, and determining the weak Block as a bad Block or setting the mode of the weak Block as a high reliability mode.

11. The method of claim 10, further comprising:

and acquiring a simulation test scene of the target storage product in the second temperature range, and performing performance test of the second temperature specification on the target storage product according to the simulation test scene to obtain an over-temperature specification performance result of the target storage product.

12. An apparatus for processing NAND particles, comprising:

13. A device for applying NAND particles, the device comprising:

a setting module, configured to set a target NAND particle on an initial storage product to obtain a target storage product meeting a second temperature specification, where the target NAND particle is determined according to the NAND particle processing method of any one of claims 1 to 7.

14. A storage product comprising target NAND particles determined by the method of processing NAND particles of any one of claims 1-7.