CN115688489A - Simulation method and device of trench etching process, storage medium and terminal - Google Patents
Simulation method and device of trench etching process, storage medium and terminal Download PDFInfo
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- CN115688489A CN115688489A CN202211713628.7A CN202211713628A CN115688489A CN 115688489 A CN115688489 A CN 115688489A CN 202211713628 A CN202211713628 A CN 202211713628A CN 115688489 A CN115688489 A CN 115688489A
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Abstract
A simulation method and device, a storage medium and a terminal of a trench etching process are provided, the method comprises the following steps: respectively carrying out isotropic etching treatment on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations to obtain etching grooves; determining the forming time of the sigma-shaped groove morphology according to the profile morphology of each etched groove; determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on the cross-sectional dimensions of each etched trench and the width and depth of the initial etched trench; substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model to obtain the simulated groove etching simulation size of the simulated groove. The method can improve the prediction accuracy of the groove size, reduce the cost and reduce the time consumption.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method and a device for simulating a trench etching process, a storage medium and a terminal.
Background
In the field of semiconductor integrated circuit manufacturing technology, with the development of semiconductor technology, the feature size of various semiconductor devices is continuously reduced, and the requirements for the performance of the semiconductor devices are higher and higher. Stress channel transistors, widely studied in the integrated circuit industry, utilize damascene germanium-silicon (SiGe) technology, can be showing improvement channel's carrier mobility to improve the performance of device, and then the size of continuously shrinking the transistor realizes the integration level on a larger scale.
The compressive stress may improve a driving current of a P-channel Metal Oxide Semiconductor (PMOS) device. However, with the increasing integration of Complementary Metal Oxide Semiconductor (CMOS) technology and the decreasing critical dimension, the stress pull-up method adopted in the conventional CMOS process has not been able to meet the requirement of the device for the PMOS driving current, and particularly, after the CMOS technology enters the critical dimension of 28nm or less, in order to further increase the compressive stress of the PMOS region, the strained silicon technology (e.g., the sige epitaxy technology) may be adopted to achieve the requirement of the device for the PMOS driving current after the device is greatly shrunk, thereby meeting the response speed of the device.
And forming a germanium-silicon epitaxial layer in the drain-source region of the PMOS by a germanium-silicon epitaxial technology so as to improve the performance of the PMOS device. Specifically, the speed of a PMOS device can be improved by embedding germanium-silicon strain materials in a source and a drain, and as the lattice constants of germanium and silicon are different (the lattice constant of silicon is 5.431A, the lattice constant of germanium is 5.653A, and the mismatching rate of silicon and germanium is 4.09%), the SiGe strain materials can generate compressive stress on a transverse channel, the compressive stress can enable a valence band energy band to be split, a heavy hole leaves the valence band top, and a light hole occupies the valence band top, so that the effective conduction mass and the scattering probability of holes in the channel direction are reduced, and the purposes of enhancing the current carrying and improving the response mobility of the PMOS device are achieved.
To form the silicon germanium epitaxial layer, it is first necessary to form a Sigma (Sigma) trench structure in the drain-source region of the PMOS device and then form a SiGe epitaxial layer in the trench by epitaxial growth techniques. The sigma groove etching is a key process step influencing the PMOS driving current, and the performance and the stability of the PMOS device are determined by the key size of the sigma groove etching.
However, in the prior art, in order to achieve the required critical dimension, a large amount of manual experiments are usually required, and depending on the experience of an engineer, the process parameters of the trench etching are adjusted, so that the accuracy of predicting the trench dimension is low, the cost is too high, and the time is too long.
Disclosure of Invention
The invention aims to provide a simulation method and device, a storage medium and a terminal of a trench etching process, which can improve the prediction accuracy of the trench size, reduce the cost and reduce the time consumption.
To solve the above technical problem, an embodiment of the present invention provides a method for simulating a trench etching process, including: respectively carrying out isotropic etching treatment on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations to obtain etching grooves, wherein the cross sections of the plurality of initial etching grooves are rectangular and are obtained by adopting the same anisotropic etching treatment process; determining the forming time of the sigma-shaped groove morphology according to the profile morphology of each etched groove; determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on a cross-sectional dimension of each etched trench and a width and depth of the initial etched trench; substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model to obtain the simulated groove etching simulation size of the simulated groove; the cross section of the groove to be simulated is rectangular.
Optionally, the trench etching simulation dimension is selected from one or more of: the maximum width of the simulated trench, the maximum depth of the simulated trench, the bottom width of the simulated trench, and the distance between the position of the maximum width of the simulated trench and the top surface.
Optionally, the time length to be simulated is longer than the forming time length; the preset etching simulation model is expressed by the following formula:
wherein proximitity is used to represent the maximum width of the simulated trench, RCD is used to represent the maximum depth of the simulated trench, BCD is used to represent the bottom width of the simulated trench, SMD is used to represent the distance between the location of the maximum width of the simulated trench and the top surface, WS is used to represent the sigma width of the simulated trench; HR is used for representing the depth of the groove to be simulated, WP is used for representing the width of the groove to be simulated, a is used for representing a preset proportionality coefficient, b is used for representing a preset compensation parameter, and theta is used for representing a preset crystal orientation included angle; r is 100-1 For a first etch rate, R, in a crystal orientation 100 within the formation time 100-2 For a second etch rate, R, in the crystal orientation 100 after said formation period 111-1 For indicating a first etch rate, R, in crystal orientation 111 during said forming period 111-2 For representing a second etch rate in crystal orientation 111 after the formation duration.
Optionally, determining a first etch rate in one or more crystal orientations within the formation duration based on the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench comprises: selecting at least two etching grooves within the forming duration, and determining the etching duration and the depth of each selected etching groove; a first etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-1 For a first etch rate in crystal orientation 100 that is within the formation time period, ahr is determined from a difference in selected etch trench depths, and at is determined from a difference in selected etch trench etch time periods.
Optionally, determining a first etching rate in one or more crystal directions within the forming duration according to the cross-sectional dimension of each etching trench and the width and depth of the initial etching trench, further comprising: determining the maximum width of each selected etching groove; a first etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-1 For a first etch rate in crystal orientation 111 during said forming period, Δ HR is determined from the difference in the depths of the selected etch trenches and Δ WP is determined from the difference in the maximum widths of the selected etch trenches.
Optionally, determining a second etch rate in one or more crystal orientations after the forming duration based on the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench comprises: selecting at least two sigma grooves with preset duration after the forming duration, and determining the etching duration and depth of each selected sigma groove; a second etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-2 For representing a second etch rate in crystal orientation 100 after said formation duration, ahr is determined from a difference in depths of selected sigma trenches and at is determined from a difference in etch durations of selected sigma trenches.
Optionally, determining a second etching rate in one or more crystal directions after the forming duration according to the cross-sectional dimension of each etching trench and the width and depth of the initial etching trench, further comprising: determining the maximum width of each selected sigma groove; the second etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-2 For indicating a second etch rate in the crystal orientation 111 after said forming duration, Δ HR is determined from the difference in the depths of the selected sigma trenches and Δ WP is determined from the difference in the maximum widths of the selected sigma trenches.
Optionally, the selected number of sigma trenches after the forming duration is two.
Optionally, determining the forming duration of the sigma-channel profile according to the profile of each etched channel includes: selecting a plurality of etching grooves, and determining the etching duration, depth and maximum width of each selected etching groove; a first etch rate of each etched trench in crystal direction 110 is determined using the following equation:
wherein R is 110-1 For indicating a first etch rate in crystal orientation 110 during said forming period, Δ HR is determined by a difference in depth of a selected etched trench, Δ T is determined by an etch of a selected sigma trenchThe difference value of the time length is determined, wherein a is used for representing a preset proportionality coefficient, and b is used for representing a preset compensation parameter; the moment of the inflection point where the first etch rate in the crystal direction 110 is gradually decreased to be gentle is used as the formation duration of the sigma-channel profile.
Optionally, determining the forming duration of the sigma-channel profile according to the profile of each etched channel includes: and adopting a preset time length corresponding to the etching groove with the sigma-shaped groove appearance appearing for the first time as the forming time length of the sigma-shaped groove appearance.
Optionally, the simulation method of the trench etching process further includes: carrying out isotropic etching treatment on a second sample with the size of the to-be-simulated groove by adopting the to-be-simulated duration so as to obtain a verification groove; comparing the simulated groove etching size of the simulated groove with the section size of the verification groove; and calibrating the preset etching simulation model according to the comparison result.
Optionally, calibrating the preset etching simulation model includes: calibrating the proportional coefficient and the compensation parameter in the etching simulation model; wherein the scaling factor and the compensation parameter are used to determine a sigma width WS of the simulated trench.
To solve the above technical problem, an embodiment of the present invention provides a simulation apparatus for a trench etching process, including: the etching processing module is used for respectively carrying out isotropic etching processing on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations so as to obtain the etching grooves, wherein the cross sections of the plurality of initial etching grooves are rectangular and are obtained by adopting the same anisotropic etching processing technology; the forming duration determining module is used for determining the forming duration of the sigma-type groove appearance according to the profile appearance of each etching groove; an etch rate determination module for determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on a cross-sectional dimension of each etch trench and a width and depth of the initial etch trench; the simulation size determining module is used for substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model so as to obtain the groove etching simulation size of the simulated groove; the cross section of the groove to be simulated is rectangular.
To solve the above technical problem, an embodiment of the present invention provides a storage medium having a computer program stored thereon, where the computer program is executed by a processor to perform the steps of the simulation method of the trench etching process.
In order to solve the above technical problem, an embodiment of the present invention provides a terminal, which includes a memory and a processor, where the memory stores a computer program capable of running on the processor, and the processor executes the steps of the simulation method of the trench etching process when running the computer program.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, a plurality of preset durations are adopted, isotropic etching processing is respectively carried out on a plurality of first samples with initial etching grooves, the forming duration of sigma groove morphology is determined, further, according to actual data of the sectional dimension of the etching grooves and the width and the depth of the initial etching grooves, first etching rates in one or more crystal directions within the forming duration and second etching rates in one or more crystal directions after the forming duration are determined, then, data to be simulated can be input into a preset etching simulation model to obtain the groove etching simulation dimension of the simulated grooves.
Furthermore, by adopting a preset etching simulation model containing a plurality of sizes, the complex sigma-channel morphology can be effectively predicted on the basis that the time length to be simulated is longer than the forming time length, namely the default sigma-channel morphology is formed, and the prediction accuracy of the channel size is further improved.
Further, at least two etching trenches within the formation time period are selected, the etching time period and the depth of each selected etching trench are determined, and the first etching rate in the crystal orientation 100 or the crystal orientation 111 is determined by using a formula, so that the first etching rate can be calculated by using the etching time period and the depth of at least two etching trenches by using the characteristic of the first etching rate in the crystal orientation 100 or the crystal orientation 111 (for example, the first etching rate is slowly decreased within the formation time period).
Further, selecting at least two sigma trenches after the forming duration, determining an etching duration and a depth of each selected sigma trench, and determining a second etching rate on the crystal orientation 100 or the crystal orientation 111 by using a formula, so that the second etching rate can be calculated by using the characteristics of the second etching rate on the crystal orientation 100 or the crystal orientation 111 (for example, the second etching rate is kept stable after the forming duration).
Further, only two sigma trenches may be selected to determine the second etching rate, and since the second etching rate remains stable after the formation period, the amount of calculation may be reduced and the prediction efficiency may be improved by reducing the number of selected sigma trenches.
Further, a plurality of etching grooves are selected, the etching duration, the etching depth and the maximum width of each selected etching groove are determined, a formula is adopted to determine the first etching rate of each etching groove on the crystal orientation 110, the moment of the inflection point of the first etching rate on the crystal orientation 110 from reduction to flattening is adopted as the formation duration of the sigma groove morphology, the formation duration of the sigma groove morphology can be determined through calculation, and the accuracy is higher.
Furthermore, the preset time corresponding to the etching groove with the sigma-shaped groove appearance appearing for the first time is used as the forming time of the sigma-shaped groove appearance, the forming time can be determined by observing the section of the first sample, and the determination efficiency is higher.
Further, carrying out isotropic etching treatment on a second sample with the size of the to-be-simulated groove by adopting the to-be-simulated duration to obtain a verification groove; comparing the simulated groove etching size of the simulated groove with the section size of the verification groove; and calibrating the preset etching simulation model according to the comparison result, so that the etching simulation model can be continuously optimized according to actual data, and the prediction accuracy of the size of the groove is further improved.
Drawings
FIG. 1 is a flow chart of a method for simulating a trench etch process in an embodiment of the present invention;
FIG. 2 is a schematic representation of a cross-sectional structure variation of a sigma trench formed by an isotropic etch process from the initial trench etch in accordance with an embodiment of the present invention;
FIG. 3 is a diagram illustrating simulated dimensions of respective trench etches for a sigma trench in an embodiment of the invention;
fig. 4 is a schematic structural diagram of an apparatus for simulating a trench etching process according to an embodiment of the present invention.
Detailed Description
In the prior art, in order to form a silicon germanium epitaxial layer, a sigma trench structure is firstly formed in a drain-source region of a PMOS device, and then a SiGe epitaxial layer is formed in the trench by an epitaxial growth technique. Sigma groove etching is a key process step influencing PMOS driving current, and the performance and stability of a PMOS device are determined by the key size of sigma groove etching. However, in the prior art, in order to achieve the required critical dimension, a large amount of manual experiments are usually required, and depending on the experience of an engineer, the process parameters of the trench etching are adjusted, so that the accuracy of predicting the trench dimension is low, the cost is too high, and the time is too long.
Specifically, the conventional sigma trench etching method generally performs an anisotropic etching process (e.g., dry etching) to form U-shaped trenches, and then performs an isotropic etching process (e.g., wet etching) to form sigma trenches. The critical dimension of the sigma trench etching determines the performance and stability of the PMOS device, and the control of the critical dimension of the sigma trench needs to depend on the experience of the engineer, for example, in order to change different critical dimensions, the etching depth and opening size of the dry etching, or the wet etching time or the etching rate on the three crystal planes of the silicon crystal <100>, <110>, <111>, which results in lower prediction accuracy, higher cost and longer time consumption for the trench dimension.
In the embodiment of the invention, a plurality of preset durations are adopted, isotropic etching processing is respectively carried out on a plurality of first samples with initial etching grooves, the forming duration of sigma groove morphology is determined, further, according to actual data of the sectional dimension of the etching grooves and the width and the depth of the initial etching grooves, first etching rates in one or more crystal directions within the forming duration and second etching rates in one or more crystal directions after the forming duration are determined, then, data to be simulated can be input into a preset etching simulation model to obtain the groove etching simulation dimension of the simulated grooves.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below.
Referring to fig. 1, fig. 1 is a flowchart of a simulation method of a trench etching process according to an embodiment of the present invention. The simulation method of the trench etching process may include steps S11 to S14:
step S11: respectively carrying out isotropic etching treatment on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations to obtain etching grooves, wherein the cross sections of the plurality of initial etching grooves are rectangular and are obtained by adopting the same anisotropic etching treatment process;
step S12: determining the forming time of the sigma-shaped groove morphology according to the profile morphology of each etched groove;
step S13: determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on the cross-sectional dimensions of each etched trench and the width and depth of the initial etched trench;
step S14: substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model to obtain the groove etching simulation size of the simulated groove, wherein the section of the groove to be simulated is rectangular.
In the specific implementation of step S11, the actual etching process may be performed on a plurality of actual samples (e.g., semiconductor substrates) by using the same anisotropic etching process, and first, initial etching trenches with uniform dimensions are formed.
And then carrying out isotropic etching treatment on each first sample, and etching different first samples by adopting respective preset time length to obtain an etched groove in each first sample.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a variation of the cross-sectional structure of a sigma trench formed by an isotropic etching process from the initial trench etching.
First, the initial etched trenches may be etched by a dry etching process, and the etching direction may be downward etching, so that the cross-sectional shape of each initial etched trench is rectangular, and each obtained sample is recorded as a first sample (e.g., the first cross-sectional view in fig. 2).
Next, each first sample may be etched using a wet etching process, wherein the etching direction is a respective direction, and it is understood that each first sample has a respective etching rate in each crystal orientation direction (e.g., crystal orientation 100, crystal orientation 110, and crystal orientation 111), such that an intermediate process profile (e.g., the second cross-sectional view in fig. 2) is formed first, and a sigma trench profile (e.g., the third cross-sectional view in fig. 2) is formed last.
It should be noted that, in an actual wet etching process, as the etching area increases, the etching rates in the crystal directions 100 and 111 show similar etching trends, that is, the etching rate decreases before the sigma-type trench profile is formed, and the etching rate tends to be flat and stable after the sigma-type trench profile is formed, that is, the etching rate has the time of the inflection point from the decrease to the flat.
It will be appreciated that in an actual wet etching process, the etching rate in the crystal orientation 110 also decreases before the sigma-channel profile is formed, and the etching rate tends to be stable after the sigma-channel profile is formed, i.e. the etching rate has a moment of inflection point from decreasing to becoming flat.
With continued reference to fig. 1, in an implementation of step S12, a length of time for forming the sigma trench profile may be determined based on a profile of each etched trench.
Specifically, the first sample with the etched trench may be sliced, so that the profile of the etched trench may be observed and measured.
Since the initial etching trenches of the respective first samples are obtained by the same anisotropic etching process, the cross-sectional dimensions can be considered to be uniform.
In the process of carrying out isotropic etching treatment by adopting different preset durations, a sigma-shaped groove shape cannot be formed on a first sample with a shorter preset duration, and the etching rate is faster and lower; for a first sample with longer preset time, the sigma groove shape can be formed, and the etching rate is kept stable and stable.
In a specific implementation manner of the embodiment of the present invention, the step of determining the forming duration of the sigma-channel profile according to the profile of each etched channel may include: and adopting a preset time length corresponding to the etching groove with the sigma-shaped groove appearance appearing for the first time as the forming time length of the sigma-shaped groove appearance.
In the embodiment of the invention, the preset time corresponding to the etching groove with the sigma-shaped groove appearance appearing for the first time is used as the forming time of the sigma-shaped groove appearance, the forming time can be determined by observing the slices of the plurality of first samples, and the determining efficiency is higher.
In another specific implementation manner of the embodiment of the present invention, the step of determining the forming duration of the sigma-channel profile according to the profile of each etched channel may include: selecting a plurality of etching grooves, and determining the etching duration, depth and maximum width of each selected etching groove; a first etch rate of each etched trench in crystal orientation 110 is determined using the following equation:
wherein R is 110-1 For representing a first etch rate in crystal orientation 110 within said formation time period, ahr being determined from a difference in depths of selected etched trenches, at being determined from a difference in etch time periods of selected sigma trenches, a for representing a predetermined scaling factor, b for representing a predetermined compensation parameter; the moment of the inflection point at which the first etch rate in the crystal direction 110 decreases to become gentle is used as the formation duration of the sigma trench profile.
Specifically, a first etch rate R in the crystal orientation 110 is achieved during the formation time 110-1 And a first etching rate R in the crystal orientation 100 100-1 The following relationships exist between:
and determining R using the formula 100-1 And WS:
HR is used for representing the depth of the etched groove, Δ HR is determined according to the difference of the depths of the selected etched grooves, Δ T is determined according to the difference of the etching durations of the selected etched grooves, WS is used for representing the sigma width of the etched groove, Δ WS is determined according to the difference of the sigma widths of the selected etched grooves, a is used for representing the preset scaling factor, and b is used for representing the preset compensation parameter.
From the above, the first etching rate R of each etching trench in the crystal orientation 110 can be determined 110-1 And using a first etch rate R in said crystal orientation 110 110-1 Having the characteristic of the moment of inflection point from decreasing to flattening, determining the formation duration of the sigma trench profile.
In the embodiment of the invention, by selecting a plurality of etching grooves, determining the etching duration, depth and maximum width of each selected etching groove, determining the first etching rate of each etching groove in the crystal direction 110 by using a formula, and determining the forming duration of the sigma-shaped groove morphology by using the inflection point time at which the first etching rate in the crystal direction 110 decreases to become flat as the forming duration of the sigma-shaped groove morphology, the forming duration of the sigma-shaped groove morphology can be determined by calculation, and the accuracy is higher.
It should be noted that the first etching rate R of each etched trench in the crystal orientation 100 may also be determined first 100-1 And using a first etch rate R in said crystal orientation 100 100-1 Having a characteristic of an inflection point time from decreasing to becoming gentleDetermining the forming time of the sigma groove shape; alternatively, the first etching rate R of each etching trench in the crystal direction 111 can be determined first 111-1 And using a first etch rate R in said crystal orientation 111 111-1 The method has the characteristic of turning point time from reduction to flattening, and the forming duration of the sigma groove morphology is determined, which is not described in detail herein.
In a specific implementation of step S13, a dicing process may be performed on at least a portion of each etched trench to obtain a cross-sectional dimension thereof. And determining, in conjunction with the width and depth of the initial etch trench, a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration.
Further, the crystal orientation may be crystal orientation 100, and determining the first etch rate in one or more crystal orientations within the formation duration based on the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench may include: selecting at least two etching grooves within the forming duration, and determining the etching duration and the depth of each selected etching groove; a first etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-1 For a first etch rate in crystal orientation 100 that is within the formation time period, ahr is determined from a difference in the depths of selected etched trenches, and at is determined from a difference in the etch time periods of selected etched trenches.
Specifically, in selecting two etched trenches within the formation time period, Δ HR may be a difference in depths of the selected two etched trenches, and Δ T may be a difference in etching time periods of the selected two etched trenches.
Without limitation, where more than two etched trenches are selected within the formation time period, Δ HR may be an average of the difference in depth between the selected two etched trenches and Δ T may be an average of the difference in etch time period between the selected two etched trenches.
In a non-limiting embodiment, when selecting more than two etched trenches within the forming time, the time difference between every two etched trenches having the same etching time, that is, Δ T, may be selected to be consistent, and at this time, only the average value of the difference between the depths of the selected two etched trenches needs to be used as Δ HR.
In an embodiment of the present invention, at least two etching trenches within the forming time are selected, the etching time and the depth of each selected etching trench are determined, and the first etching rate in the crystal orientation 100 is determined by using a formula, so that the first etching rate can be calculated by using the etching time and the depth of at least two etching trenches by using the characteristic of the first etching rate in the crystal orientation 100 (for example, the first etching rate slowly decreases within the forming time).
Further, the crystal orientation may be crystal orientation 111, and the step of determining the first etching rate in one or more crystal orientations within the formation time period according to the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench may further include: determining the maximum width of each selected etching groove; a first etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-1 For indicating a first etch rate in crystal orientation 111 during said forming period, ahr is determined based on a difference in depths of selected etch trenches, and WP is determined based on a difference in maximum widths of selected etch trenches.
Specifically, when two etched trenches within the formation time period are selected, Δ HR may be a difference in depths of the two selected etched trenches, and Δ WP may be a difference in maximum widths of the two selected etched trenches.
Without limitation, when more than two etched trenches are selected within the formation duration, Δ HR may be an average of the difference in depth between two selected etched trenches and Δ WP may be an average of the difference in maximum width between two selected etched trenches.
In an embodiment of the present invention, at least two etching trenches within the forming duration are selected, the etching duration and depth of each selected etching trench are determined, and the first etching rate in the crystal orientation 111 is determined by using a formula, so that the first etching rate can be calculated by using the etching duration and depth of at least two etching trenches by using the characteristic of the first etching rate in the crystal orientation 111 (for example, the first etching rate slowly decreases within the forming duration).
Further, the crystal orientation may be crystal orientation 100, and the step of determining a second etching rate in one or more crystal orientations after the forming duration according to the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench may include: selecting at least two sigma grooves with preset duration after the forming duration, and determining the etching duration and depth of each selected sigma groove; the second etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-2 For indicating a second etch rate in the crystal orientation 100 after said formation time period, ahr is determined from a difference in the depths of the selected sigma trenches and at is determined from a difference in the etch time periods of the selected sigma trenches.
In particular, in selecting two sigma trenches after the formation duration, Δ HR may be a difference in depth of the selected two sigma trenches and Δ T may be a difference in etch duration of the selected two sigma trenches.
Without limitation, where more than two sigma trenches are selected after the formation duration, Δ HR may be an average of the difference in depth between two selected sigma trenches, and Δ T may be an average of the difference in etch duration between two selected sigma trenches.
In a non-limiting embodiment, when selecting more than two sigma trenches after the formation duration, the time difference between two sigma trenches having the same etching duration, that is, Δ T, may be selected to be consistent, and then only the average value of the depth difference between two selected sigma trenches is used as Δ HR.
In an embodiment of the present invention, at least two sigma trenches after the formation duration are selected, the etching duration and depth of each selected sigma trench are determined, and the second etching rate in the crystal orientation 100 is determined by using a formula, so that the second etching rate can be calculated by using the etching duration and depth of at least two sigma trenches by using the characteristics of the second etching rate in the crystal orientation 100 (for example, the second etching rate is kept stable after the formation duration).
Further, the selected number of sigma trenches after said forming duration is two.
In the embodiment of the present invention, only two sigma trenches may be selected to determine the second etching rate, and since the second etching rate in the crystal direction 100 remains stable after the formation time period, the amount of calculation may be reduced and the prediction efficiency may be improved by reducing the number of selected sigma trenches.
Further, the crystal orientation may be crystal orientation 111, and the step of determining the second etching rate in one or more crystal orientations after the forming time period according to the cross-sectional dimension of each etched trench and the width and depth of the initial etched trench may further include: determining the maximum width of each selected sigma groove; the second etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-2 For indicating a second etch rate in the crystal orientation 111 after said forming duration, Δ HR is determined from the difference in the depths of the selected sigma trenches and Δ WP is determined from the difference in the maximum widths of the selected sigma trenches.
In particular, when choosing two sigma trenches after said forming duration, Δ HR may be the difference of the depths of the chosen two sigma trenches and Δ WP may be the difference of the maximum widths of the chosen two sigma trenches.
Without limitation, when more than two sigma trenches are selected after the formation period, Δ HR may be an average of the difference in depth between two selected sigma trenches, and Δ WP may be an average of the difference in maximum width between two selected sigma trenches.
Further, the selected number of sigma trenches after said forming duration is two.
In the embodiment of the present invention, only two sigma trenches may be selected to determine the second etching rate, and since the second etching rate in the crystal direction 111 remains stable after the formation time period, the amount of operation may be reduced and the prediction efficiency may be improved by reducing the number of selected sigma trenches.
In the specific implementation of step S14, a preset etching simulation model may be used for simulation.
Specifically, the input data for simulation may include a length of time to be simulated, a size of the trench to be simulated (which may include, for example, a depth of the trench to be simulated, a width of the trench to be simulated), and the first etching rate and the second etching rate. After substituting into the preset etching simulation model, the obtained output data may be the trench etching simulation size of the simulated trench.
It should be noted that, in the implementation, in order to form a germanium-silicon epitaxial layer in the drain-source region of the PMOS device to improve the performance of the PMOS device, it is usually necessary to form a sigma trench structure, so that it is not necessary to study and simulate an intermediate structure before forming the sigma trench profile, and therefore it is more valuable to construct an etching simulation model after forming the sigma trench profile (i.e., the time period to be simulated is longer than the forming time period).
Referring to fig. 3, fig. 3 is a diagram illustrating simulated dimensions of various trench etches of a sigma trench in an embodiment of the invention.
In particular, the trench etch simulation dimensions may be selected from one or more of: the maximum width Proximaty of the simulated groove, the maximum depth RCD of the simulated groove, the bottom width BCD of the simulated groove, and the distance SMD between the position of the maximum width of the simulated groove and the top surface.
It is noted that the sigma width WS of the simulated trench is also shown in fig. 3 as half the difference between the maximum width Proximity of the simulated trench and the top width.
Further, the time length to be simulated is longer than the forming time length; the preset etching simulation model is expressed by the following formula:
wherein Proximity is used forRepresenting a maximum width of the simulated trench, RCD representing a maximum depth of the simulated trench, BCD representing a bottom width of the simulated trench, SMD representing a distance between a location of the maximum width of the simulated trench and a top surface, WS representing a sigma width of the simulated trench; HR is used for representing the depth of the groove to be simulated, WP is used for representing the width of the groove to be simulated, a is used for representing a preset proportionality coefficient, b is used for representing a preset compensation parameter, and theta is used for representing a preset crystal orientation included angle; r 100-1 For a first etch rate, R, in a crystal orientation 100 within the formation time 100-2 For a second etch rate, R, in crystal orientation 100 after the formation period 111-1 For indicating a first etch rate, R, in crystal orientation 111 during said forming period 111-2 For representing a second etch rate in crystal orientation 111 after the formation duration.
Specifically, the sigma width WS may be determined using a preset scaling factor a and a preset compensation parameter b, where the scaling factor a and the compensation parameter b may be preset values determined according to historical empirical data.
The SMD can be calculated by using the angle θ between WS and the predetermined crystal orientation. It is understood that the included crystal orientation angle θ may be a crystal orientation angle of the semiconductor substrate material, and the included angle is determined according to the crystal orientation of the semiconductor substrate material and is a fixed value.
For example, when the semiconductor substrate material is silicon, the angle between crystal orientation 110 and crystal orientation 111 can be used as the predetermined crystal orientation angle θ.
In the embodiment of the invention, by adopting the preset etching simulation model with a plurality of sizes, the complex sigma-channel topography can be effectively predicted on the basis that the time length to be simulated is longer than the forming time length, namely the default sigma-channel topography is formed, and the accuracy of predicting the channel size is further improved.
In the embodiment of the invention, isotropic etching processing is respectively carried out on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations, the forming duration of the sigma groove morphology is determined, further, according to actual data such as the section size of the etching grooves and the width and depth of the initial etching grooves, first etching rates in one or more crystal directions within the forming duration and second etching rates in one or more crystal directions after the forming duration are determined, and then data to be simulated can be input into a preset etching simulation model to obtain the groove etching simulation size of the simulated grooves.
Further, the simulation method of the trench etching process may further include: carrying out isotropic etching treatment on a second sample with the size of the to-be-simulated groove by adopting the to-be-simulated duration so as to obtain a verification groove; comparing the simulated groove etching size of the simulated groove with the section size of the verification groove; and calibrating the preset etching simulation model according to the comparison result.
In the embodiment of the invention, the time length to be simulated is adopted, and isotropic etching treatment is carried out on the second sample with the size of the groove to be simulated to obtain a verification groove; comparing the simulated groove etching size of the simulated groove with the section size of the verification groove; and calibrating the preset etching simulation model according to the comparison result, so that the etching simulation model can be continuously optimized according to actual data, and the prediction accuracy of the size of the groove is further improved.
Further, the step of calibrating the preset etching simulation model may include: calibrating the proportional coefficient and the compensation parameter in the etching simulation model; wherein the scaling factor and the compensation parameter are used to determine a sigma width WS of the simulated trench.
As described above, the sigma width WS may be determined by using a preset scaling factor a and a preset compensation parameter b, where the scaling factor a and the compensation parameter b may be preset values determined according to historical empirical data.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a simulation apparatus for a trench etching process according to an embodiment of the present invention. The simulation apparatus of the trench etching process may include:
the etching processing module 41 is configured to perform isotropic etching processing on a plurality of first samples having initial etching trenches by using a plurality of preset durations to obtain etching trenches, where the plurality of initial etching trenches have rectangular cross sections and are obtained by using the same anisotropic etching processing process;
a forming duration determination module 42, configured to determine a forming duration of the sigma trench profile according to the profile of each etched trench;
an etch rate determination module 43 for determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on the cross-sectional dimensions of each etched trench and the width and depth of the initial etched trench;
and a simulation size determining module 44, configured to substitute the time length to be simulated, the size of the trench to be simulated, the first etching rate, and the second etching rate into a preset etching simulation model to obtain a trench etching simulation size of the simulated trench, where a cross section of the trench to be simulated is rectangular.
In a specific implementation, the device may correspond to a chip having a data processing function in a terminal; or to a chip module including a chip having a data processing function in the terminal, or to the terminal.
For the principle, specific implementation and beneficial effects of the simulation apparatus for trench etching process, reference is made to the above description related to the simulation method for trench etching process, and details are not repeated here.
Embodiments of the present invention also provide a storage medium having a computer program stored thereon, where the computer program is executed by a processor to perform the steps of the above method. The readable storage medium may be a computer-readable storage medium, and may include, for example, a non-volatile (non-volatile) or non-transitory (non-transitory) memory, and may further include an optical disc, a mechanical hard disk, a solid state hard disk, and the like.
Specifically, in the embodiment of the present invention, the processor may be a Central Processing Unit (CPU), and the processor may also be other general-purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, and the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
It will also be appreciated that the memory in the embodiments of the subject application may be either volatile memory or nonvolatile memory, or may include both volatile and nonvolatile memory. The non-volatile memory may be a read-only memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an electrically Erasable EPROM (EEPROM), or a flash memory. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. By way of example, but not limitation, many forms of Random Access Memory (RAM) are available, such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), enhanced SDRAM (ESDRAM), synchlink DRAM (SLDRAM), and direct bus RAM (DR RAM).
The embodiment of the invention also provides a terminal, which comprises a memory and a processor, wherein the memory is stored with a computer program capable of running on the processor, and the processor executes the steps of the method when running the computer program. The terminal comprises but is not limited to a mobile phone, a computer, a tablet computer, a server, a cloud platform and other terminal devices.
It should be understood that the term "and/or" herein is only one kind of association relationship describing the association object, and means that there may be three kinds of relationships, for example, a and/or B, and may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" in this document indicates that the former and latter related objects are in an "or" relationship.
The "plurality" appearing in the embodiments of the present application means two or more.
The descriptions of the first, second, etc. appearing in the embodiments of the present application are only for the purpose of illustrating and differentiating the description objects, and do not represent any particular limitation to the number of devices in the embodiments of the present application, and cannot constitute any limitation to the embodiments of the present application.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.
Claims (15)
1. A simulation method of a trench etching process is characterized by comprising the following steps:
respectively carrying out isotropic etching treatment on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations to obtain etching grooves, wherein the cross sections of the plurality of initial etching grooves are rectangular and are obtained by adopting the same anisotropic etching treatment process;
determining the forming time of the sigma-shaped groove morphology according to the profile morphology of each etched groove;
determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on the cross-sectional dimensions of each etched trench and the width and depth of the initial etched trench;
substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model to obtain the simulated groove etching simulation size of the simulated groove;
the cross section of the groove to be simulated is rectangular.
2. The method of claim 1, wherein the trench etch simulation dimensions are selected from one or more of:
the maximum width of the simulated trench, the maximum depth of the simulated trench, the width of the bottom of the simulated trench, and the distance between the position of the maximum width of the simulated trench and the top surface.
3. The method of claim 1, wherein the simulation duration is longer than the forming duration;
the preset etching simulation model is expressed by the following formula:
wherein Proximity is used to represent the maximum width of the simulated trench, RCD is used to represent the maximum depth of the simulated trench, BCD is used to represent the bottom width of the simulated trench, SMD is used to represent the distance between the location of the maximum width of the simulated trench and the top surface, WS is used to represent the sigma width of the simulated trench;
HR is used for representing the depth of the groove to be simulated, WP is used for representing the width of the groove to be simulated, a is used for representing a preset proportionality coefficient, b is used for representing a preset compensation parameter, and theta is used for representing a preset crystal orientation included angle;
R 100-1 for a first etch rate, R, in a crystal orientation 100 within the formation time 100-2 For a second etch rate, R, in the crystal orientation 100 after said formation period 111-1 For indicating a first etch rate, R, in crystal orientation 111 within said formation time period 111-2 For representing a second etch rate in crystal orientation 111 after the formation duration.
4. The method of claim 1 wherein determining a first etch rate in one or more crystal directions within the formation duration based on a cross-sectional dimension of each etched trench and a width and depth of the initial etched trench comprises:
selecting at least two etching grooves within the forming duration, and determining the etching duration and depth of each selected etching groove;
a first etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-1 For a first etch rate in crystal orientation 100 that is within the formation time period, ahr is determined from a difference in the depths of selected etched trenches, and at is determined from a difference in the etch time periods of selected etched trenches.
5. The method of claim 4 wherein determining a first etch rate in one or more crystal orientations within the formation duration based on a cross-sectional dimension of each etched trench and a width and depth of the initial etched trench further comprises:
determining the maximum width of each selected etching groove;
the first etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-1 For a first etch rate in crystal orientation 111 during said forming period, Δ HR is determined from the difference in the depths of the selected etch trenches and Δ WP is determined from the difference in the maximum widths of the selected etch trenches.
6. The method of claim 1 wherein determining a second etch rate in one or more crystal orientations after the forming duration based on a cross-sectional dimension of each etched trench and a width and depth of the initial etched trench comprises:
selecting at least two sigma grooves with preset duration after the forming duration, and determining the etching duration and depth of each selected sigma groove;
the second etch rate in the crystal orientation 100 is determined using the following equation:
wherein R is 100-2 For representing a second etch rate in crystal orientation 100 after said formation duration, ahr is determined from a difference in depths of selected sigma trenches and at is determined from a difference in etch durations of selected sigma trenches.
7. The method for simulating a trench etch process of claim 6 wherein determining a second etch rate in one or more crystal orientations after said forming duration based on a cross-sectional dimension of each etched trench and a width and depth of said initial etched trench further comprises:
determining the maximum width of each selected sigma groove;
the second etch rate in the crystal direction 111 is determined using the following equation:
wherein R is 111-2 For indicating a second etch rate in the crystal orientation 111 after said forming duration, Δ HR is determined from the difference in the depths of the selected sigma trenches and Δ WP is determined from the difference in the maximum widths of the selected sigma trenches.
8. The method for simulating a trench etching process of claim 6 or 7 wherein the selected number of sigma trenches after the formation duration is two.
9. The method of claim 1, wherein determining a length of time that the sigma-channel profile is formed based on the profile of each etched channel comprises:
selecting a plurality of etching grooves, and determining the etching duration, depth and maximum width of each selected etching groove;
a first etch rate of each etched trench in crystal orientation 110 is determined using the following equation:
wherein R is 110-1 For representing a first etch rate in crystal orientation 110 within said formation time period, ahr being determined from a difference in depths of selected etched trenches, at being determined from a difference in etch time periods of selected sigma trenches, a for representing a predetermined scaling factor, b for representing a predetermined compensation parameter;
the moment of the inflection point where the first etch rate in the crystal direction 110 is gradually decreased to be gentle is used as the formation duration of the sigma-channel profile.
10. The method of claim 1, wherein determining a length of time that the sigma-channel profile is formed based on the profile of each etched channel comprises:
and adopting a preset duration corresponding to the etching groove with the sigma groove shape appearing for the first time as the forming duration of the sigma groove shape.
11. The method for simulating a trench etching process of claim 1, further comprising:
carrying out isotropic etching treatment on a second sample with the size of the to-be-simulated groove by adopting the to-be-simulated duration so as to obtain a verification groove;
comparing the simulated groove etching size of the simulated groove with the section size of the verification groove;
and calibrating the preset etching simulation model according to the comparison result.
12. The method of claim 11, wherein calibrating the predetermined etch simulation model comprises:
calibrating the proportional coefficient and the compensation parameter in the etching simulation model;
wherein the scaling factor and the compensation parameter are used to determine a sigma width WS of the simulated trench.
13. A simulation device for a trench etching process is characterized by comprising:
the etching processing module is used for respectively carrying out isotropic etching processing on a plurality of first samples with initial etching grooves by adopting a plurality of preset durations so as to obtain the etching grooves, wherein the cross sections of the plurality of initial etching grooves are rectangular and are obtained by adopting the same anisotropic etching processing technology;
the forming duration determining module is used for determining the forming duration of the sigma-shaped groove morphology according to the profile morphology of each etching groove;
an etch rate determination module for determining a first etch rate in one or more crystal orientations within the formation duration and a second etch rate in one or more crystal orientations after the formation duration based on a cross-sectional dimension of each etch trench and a width and depth of the initial etch trench;
the simulation size determining module is used for substituting the time length to be simulated, the size of the groove to be simulated, the first etching rate and the second etching rate into a preset etching simulation model so as to obtain the groove etching simulation size of the simulated groove;
the cross section of the groove to be simulated is rectangular.
14. A storage medium having stored thereon a computer program for performing the steps of the method for simulating a trench etching process according to any one of claims 1 to 12 when the computer program is executed by a processor.
15. A terminal comprising a memory and a processor, the memory having stored thereon a computer program operable on the processor, wherein the processor, when executing the computer program, performs the steps of the method of simulating a trench etch process according to any of claims 1 to 12.
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