CN115684980A - Bidirectional power supply health intelligent diagnosis circuit and method - Google Patents
Bidirectional power supply health intelligent diagnosis circuit and method Download PDFInfo
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- CN115684980A CN115684980A CN202211025169.3A CN202211025169A CN115684980A CN 115684980 A CN115684980 A CN 115684980A CN 202211025169 A CN202211025169 A CN 202211025169A CN 115684980 A CN115684980 A CN 115684980A
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Abstract
The invention provides a bidirectional power health intelligent diagnosis circuit which comprises a gate-level driving chip and a gate-level driving resistor R Gext IGBT, differential amplification circuit, peak detection circuit, reset circuit, gate-level drive chip, gate-level drive resistor R Gext The IGBT are connected in sequence, the peak detection circuit is respectively connected with a differential amplification circuit and a reset circuit, and the differential amplifier drives a gate-level driving resistor R Gext Is sampled and fed back to the peak detection circuit, which samples the maximum value thereof. The invention also provides a bidirectional power supply health intelligent diagnosis method, which detects the gate-level driving resistor R Gext The junction temperature of the IGBT can be accurately judged by the voltages at the two ends, the cost is low, the circuit is simple, and accurate over-temperature protection of the IGBT is realized. The intelligent diagnosis of the bidirectional power supply is effectively realized.
Description
Technical Field
The invention relates to the technical field of diagnostic circuits, in particular to a bidirectional power supply health intelligent diagnostic circuit and a method thereof.
Background
In the switching power supply, an IGBT (Insulated Gate Bipolar Transistor) is widely used. Each IGBT has its applicable operating temperature range, and once the specified temperature range is exceeded, the IGBT will be damaged. According to the applicable working range of the IGBT, over-temperature protection is usually applied to the IGBT, so that the IGBT is prevented from being damaged, and the benign operation of the switching power supply is ensured. In general, an over-temperature protection method for an IGBT detects the temperature of an IGBT heat sink, not the temperature of an IGBT body, and estimates the temperature of the IGBT from the temperature of the heat sink to protect the IGBT.
Although the IGBT over-temperature protection mode is simple and low in cost, the accuracy is poor. A better method is to detect the shell temperature of the IGBT to protect the IGBT. But there is still a large gap between the case temperature and the junction temperature of the IGBT. Therefore, the junction temperature of the IGBT is detected to perform accurate protection, which is a technical problem to be solved in the industry.
Disclosure of Invention
Therefore, a bidirectional power supply health intelligent diagnosis circuit and a method thereof are needed to solve the problem of inaccurate temperature detection.
A bidirectional power supply health intelligent diagnosis circuit comprises a gate-level drive chip and a gate-level drive resistor R Gext The IGBT, the differential amplification circuit, the peak detection circuit and the reset circuit, the gate-level driving chip and the gate-level driving resistor R Gext The IGBT are connected in sequence, the peak detection circuit is respectively connected with a differential amplification circuit and a reset circuit, and the differential amplifier drives a gate-level driving resistor R Gext Is sampled and fed back to the peak detection circuit, which samples the maximum value thereof.
In one embodiment, the positive terminal of the gate-level driving chip passes through a gate-level driving resistor R Gext The negative end of the gate drive chip is connected with the emitter of the IGBT.
In one embodiment, the input end of the differential amplifier in the differential amplifying circuit is connected in parallel with the gate-level driving resistor R Gext And the output end is connected with the peak value detection circuit.
In one embodiment, the peak detection circuit includes a first diode D1, a second diode D2, a storage capacitor C1, a first comparator OPA1, and a second comparator OPA2. The anode of the first diode D1 is connected with the negative input end of the first comparator OPA1 and the negative input end of the second comparator OPA2, and the cathode of the first diode D1 is connected with the output end of the first comparator OPA1 and the anode of the second diode D2; the positive input end of the first comparator OPA1 is connected with the output end of the differential amplifier; the cathode of the second diode D2 is connected to the memory capacitor C1 and the positive input terminal of the second comparator OPA2.
In one embodiment, the reset circuit has 3 ports, and the 3 ports of the reset circuit are respectively connected with the positive terminal and the negative terminal of the gate driver chip and the positive terminal of the capacitor C1.
In one embodiment, the reset circuit includes a first resistor R1, a second resistor R2, and a P-type MOS transistor Q1. The grid electrode of the P-type MOS tube Q1 is connected with one end of a first resistor R1, and the other end of the first resistor R1 is connected with the negative end of a gate-level driving chip; the drain of the P-type MOS transistor Q1 is connected with one end of a second resistor R2, and the other end of the second resistor R2 is connected with a memory capacitor C1; the source electrode of the P-type MOS tube Q1 is connected with the positive end of the gate-level driving chip.
A bidirectional power supply health intelligent diagnosis method is used for controlling the bidirectional power supply health intelligent diagnosis circuit to work, and comprises the following steps:
(1) When the gate-level driving chip sends a high level, the gate-level driving resistor R is amplified by the differential amplifier before the IGBT reaches the threshold voltage Gext The voltage signals at two ends are sampled by a peak value detection circuit to the maximum value, and the maximum value is recorded in a memory capacitor C1;
(2) The IGBT is completely opened, the value of the memory capacitor C1 is kept unchanged, the voltage value of the C1 is sampled by the control chip, and the junction temperature of the IGBT is judged according to the voltage value; if the junction temperature of the IGBT is detected to exceed a set value, the control chip performs power-off protection on the IGBT;
(3) And the gate-level driving chip sends a low level, and when the IGBT is turned off, the reset circuit operates to discharge the voltage at the two ends of the memory capacitor C1.
The invention detects the gate-level driving resistor R Gext The junction temperature of the IGBT can be accurately judged by the voltages at the two ends, the cost is low, the circuit is simple, and accurate over-temperature protection of the IGBT is realized. The intelligent diagnosis of the bidirectional power supply is effectively realized.
Drawings
Fig. 1 is a circuit diagram of the bidirectional power health intelligent diagnosis circuit of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will recognize without departing from the spirit and scope of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the second feature or the first and second features may be indirectly contacting each other through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Please refer to fig. 1, which is a schematic diagram illustrating a bi-directional power health intelligent diagnosis circuit according to an embodiment of the present invention, wherein the bi-directional power health intelligent diagnosis circuit includes a gate-level driving chip 10 and a gate-level driving resistor R Gext 20. An IGBT30, a differential amplifying circuit 40, a peak value detection circuit 50, a reset circuit 60, a gate-level driving chip 10, a gate-level driving resistor R Gext 20. The IGBTs 30 are connected in sequence, the peak detection circuit 50 is respectively connected with a differential amplification circuit 40 and a reset circuit 60, and the differential amplification circuit is used for driving a gate-level driving resistor R Gext The voltage of 20 is sampled and fed back to the peak detection circuit 50, and the peak detection circuit 50 samples the maximum value thereof.
Specifically, the positive terminal of the gate-level driving chip 10 passes through the gate-level driving resistor R Gext The gate electrode 20 of the IGBT30 is connected, and the negative end of the gate-level driving chip 10 is connected with the emitter electrode of the IGBT 30; the 3 ports of the reset circuit 60 are respectively connected with the positive and negative terminals of the gate driver chip 10 and the positive terminal of the capacitor C1. The input end of the differential amplifier in the differential amplifying circuit 40 is connected in parallel with the gate-level driving resistor R Gext 20, and an output terminal is connected to a peak detection circuit 50.
The peak detection circuit 50 includes a first diode D1, a second diode D2, a storage capacitor C1, a first comparator OPA1, and a second comparator OPA2. The anode of the first diode D1 is connected with the negative input end of the first comparator OPA1 and the negative input end of the second comparator OPA2, and the cathode of the first diode D1 is connected with the output end of the first comparator OPA1 and the anode of the second diode D2; the positive input end of the first comparator OPA1 is connected with the output end of the differential amplifier; the cathode of the second diode D2 is connected to the memory capacitor C1 and the positive input terminal of the second comparator OPA2.
The reset circuit 60 includes a first resistor R1, a second resistor R2, and a P-type MOS transistor Q1. The grid electrode of the P-type MOS tube Q1 is connected with one end of a first resistor R1, and the other end of the first resistor R1 is connected with the negative end of the gate-level driving chip 10; the drain of the P-type MOS tube Q1 is connected with one end of a second resistor R2, and the other end of the second resistor R2 is connected with a memory capacitor C1; the source of the P-type MOS transistor Q1 is connected to the positive terminal of the gate driver chip 10.
The invention also provides a bidirectional power supply health intelligent diagnosis method, which is used for controlling the bidirectional power supply health intelligent diagnosis circuit to work, and comprises the following steps:
step 1, when the gate-level driving chip 10 sends a high level, before the IGBT30 reaches the threshold voltage, the gate-level driving resistor R is amplified by the differential amplifier Gext 20, sampling the maximum value of the voltage signals at the two ends of the capacitor by a peak detection circuit 50, and recording the maximum value in a memory capacitor C1;
step 2, the IGBT30 is completely opened, the value of the memory capacitor C1 is kept unchanged, the voltage value of the C1 is sampled by the control chip, and the junction temperature of the IGBT30 is judged according to the voltage value; if the junction temperature of the IGBT30 is detected to exceed the set value, the control chip performs power-off protection on the IGBT 30;
specifically, by detecting the gate-level driving resistor R during the turn-on process of the IGBT30 Gext 20 to calculate the gate internal resistance R of the IGBT30 Gint Gate internal resistance R of IGBT30 Gint The IGBT is not influenced by the load current and has a good linear relation with the junction temperature of the IGBT 30; thus, the internal resistance R can be increased Gint Deducing the junction temperature of the IGBT30 according to the linear relation with the junction temperature of the IGBT 30;
internal resistance R of IGBT30 Gint The derivation formula of (c) is as follows:
wherein R is Gint Is the gate internal resistance, V, of the IGBT30 Gpos For the positive voltage, V, output from the gate driver chip 10 when the IGBT30 is turned on Gneg The negative voltage V output by the gate-level driving chip 10 when the IGBT30 is turned off RGext_peak For the peak voltage, R, of the sampled gate-level drive resistor Gext Is the gate level driving resistance value.
And 3, sending a low level by the gate-level driving chip 10, and when the IGBT30 is turned off, operating the reset circuit 60 to discharge the voltage at the two ends of the memory capacitor C1.
The invention adopts a differential amplifier to drive a gate-level driving resistor R Gext 20 is sampled and fed back to the peak detection circuit 50, the peak detection circuit 50 samples the maximum value thereof and drives the resistor R by detecting the gate level Gext 20, the junction temperature of the IGBT30 is accurately judged, the cost is low, the circuit is simple, and accurate over-temperature protection of the IGBT30 is realized. The intelligent diagnosis of the bidirectional power supply is effectively realized.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. The intelligent diagnosis circuit for the health of the bidirectional power supply is characterized by comprising a gate-level driving chip and a gate-level driving resistor R Gext The IGBT, the differential amplification circuit, the peak detection circuit and the reset circuit, the gate-level driving chip and the gate-level driving resistor R Gext The IGBT are connected in sequence, the peak detection circuit is respectively connected with the differential amplification circuit and the reset circuit, and the differential amplifier drives the gate drive resistor R Gext Is sampled and fed back to the peak detection circuit, which samples the maximum value thereof.
2. The bi-directional power supply health intelligent diagnosis circuit according to claim 1, wherein the positive terminal of the gate-level driving chip is connected to the gate-level driving resistor R Gext The negative end of the gate drive chip is connected with the emitter of the IGBT.
3. The bi-directional power supply health intelligent diagnosis circuit according to claim 1, wherein the input terminal of the differential amplifier in the differential amplification circuit is connected in parallel with the gate-level driving resistor R Gext And the output end is connected with the peak value detection circuit.
4. The bi-directional power health intelligent diagnostic circuit of claim 3, wherein the peak detection circuit comprises a first diode D1, a second diode D2, a memory capacitor C1, a first comparator OPA1, a second comparator OPA2; the anode of the first diode D1 is connected with the negative input end of the first comparator OPA1 and the negative input end of the second comparator OPA2, and the cathode of the first diode D1 is connected with the output end of the first comparator OPA1 and the anode of the second diode D2; the positive input end of the first comparator OPA1 is connected with the output end of the differential amplifier; the cathode of the second diode D2 is connected to the memory capacitor C1 and the positive input terminal of the second comparator OPA2.
5. The bi-directional power supply health intelligent diagnosis circuit according to claim 4, wherein the reset circuit has 3 ports, and the 3 ports of the reset circuit are respectively connected with the positive terminal and the negative terminal of the gate driver chip and the positive terminal of the capacitor C1.
6. The bi-directional power health intelligent diagnosis circuit according to claim 5, wherein the reset circuit comprises a first resistor R1, a second resistor R2 and a P-type MOS transistor Q1; the grid electrode of the P-type MOS tube Q1 is connected with one end of a first resistor R1, and the other end of the first resistor R1 is connected with the negative end of a gate-level driving chip; the drain electrode of the P-type MOS tube Q1 is connected with one end of a second resistor R2, and the other end of the second resistor R2 is connected with the positive end of a memory capacitor C1; the source electrode of the P-type MOS tube Q1 is connected with the positive end of the gate-level driving chip.
7. A bi-directional power health intelligent diagnostic method for controlling the operation of the bi-directional power health intelligent diagnostic circuit of any one of claims 1 to 6, comprising the steps of:
when the gate-level driving chip sends a high level, the gate-level driving resistor R is amplified by the differential amplifier before the IGBT reaches the threshold voltage Gext The voltage signals at two ends are sampled by a peak value detection circuit to the maximum value, and the maximum value is recorded in a memory capacitor C1 of the peak value detection circuit;
the IGBT is completely opened, the value of the memory capacitor C1 is kept unchanged, the voltage value of the memory capacitor C1 is sampled by the control chip, and the junction temperature of the IGBT is judged according to the voltage value; if the junction temperature of the IGBT is detected to exceed a set value, the control chip performs power-off protection on the IGBT;
the gate-level driving chip sends a low level, and when the IGBT is turned off, the reset circuit operates to discharge the voltage at the two ends of the memory capacitor C1.
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| CN202211025169.3A CN115684980A (en) | 2022-08-25 | 2022-08-25 | Bidirectional power supply health intelligent diagnosis circuit and method |
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| CN202211025169.3A CN115684980A (en) | 2022-08-25 | 2022-08-25 | Bidirectional power supply health intelligent diagnosis circuit and method |
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| CN202211025169.3A Pending CN115684980A (en) | 2022-08-25 | 2022-08-25 | Bidirectional power supply health intelligent diagnosis circuit and method |
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