CN117997325A - Control circuit and electronic device of gallium nitride device - Google Patents
Control circuit and electronic device of gallium nitride device Download PDFInfo
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- CN117997325A CN117997325A CN202410399007.9A CN202410399007A CN117997325A CN 117997325 A CN117997325 A CN 117997325A CN 202410399007 A CN202410399007 A CN 202410399007A CN 117997325 A CN117997325 A CN 117997325A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 183
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 183
- 238000001514 detection method Methods 0.000 claims abstract description 69
- 230000007306 turnover Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims 1
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- 239000004065 semiconductor Substances 0.000 description 5
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- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
The embodiment of the invention discloses a control circuit of a gallium nitride device and an electronic device. The control circuit of the gallium nitride device comprises a current detection module, a voltage detection module and a control module; the current detection module is connected between the first pole of the gallium nitride device and the control module; the current detection module is used for collecting the voltage value of the first pole of the gallium nitride device so as to determine the on-current value of the gallium nitride device; the voltage detection module is connected between the second pole of the gallium nitride device and the control module; the voltage detection module is used for collecting a voltage value of a second pole of the gallium nitride device so as to determine a target voltage value between the first pole and the second pole of the gallium nitride device; the output end of the control module is used for being connected with the control end of the gallium nitride device, and the control module is used for controlling the conduction state of the gallium nitride device according to the conduction current value and the target voltage value. The technical scheme provided by the embodiment avoids that the system current exceeds the saturation current of the gallium nitride device, and improves the reliability of the gallium nitride device.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a control circuit and an electronic device of a gallium nitride device.
Background
With the development of semiconductor technology, the demand for semiconductor devices is increasing. When the existing semiconductor devices such as gallium nitride devices and the like work, the reliability of the gallium nitride devices can be affected due to current saturation caused by the fact that the system current exceeds the saturation current of the gallium nitride devices or the fact that the temperature rise is too high.
Disclosure of Invention
The embodiment of the invention provides a control circuit and an electronic device of a gallium nitride device, which are used for solving the problems that the system current exceeds the saturation current of the gallium nitride device or the current saturation occurs due to the overhigh temperature rise when the existing semiconductor devices such as the gallium nitride device and the like work, and the reliability of the gallium nitride device is affected.
In order to realize the technical problems, the invention adopts the following technical scheme:
the embodiment of the invention provides a control circuit of a gallium nitride device, which comprises the following components:
The device comprises a current detection module, a voltage detection module and a control module;
the current detection module is connected between the first pole of the gallium nitride device and the control module; the current detection module is used for collecting the voltage value of the first pole of the gallium nitride device so as to determine the on-current value of the gallium nitride device;
the voltage detection module is connected between the second pole of the gallium nitride device and the control module; the voltage detection module is used for collecting a voltage value of a second pole of the gallium nitride device so as to determine a target voltage value between the first pole and the second pole of the gallium nitride device;
the output end of the control module is used for connecting with the control end of the gallium nitride device, and the control module is used for generating a first control signal according to the on current value and the target voltage value; the first control signal is used for controlling the conduction state of the gallium nitride device.
Optionally, the voltage detection module includes:
the device comprises a direct current power supply unit, a first voltage division network, a unidirectional conduction unit and a first comparison unit;
The first end of the direct current power supply unit is connected with the first end of the first voltage division network, the second end of the direct current power supply unit is connected with the second end of the first voltage division network, the third end of the first voltage division network is connected with the first end of the unidirectional conduction unit, and the second end of the unidirectional conduction unit is connected with the second pole of the gallium nitride device and the first input end of the first comparison unit;
the first end of the current detection module is connected with the first electrode of the gallium nitride device and the second input end of the first comparison unit, and the second end of the current detection module is connected with the second end of the direct current power supply unit and the grounding end.
Optionally, the first voltage dividing network includes: a first resistor and a second resistor;
The first end of the first resistor is connected with the first end of the direct current power supply unit, and the second end of the first resistor is connected with the first end of the second resistor and the first end of the unidirectional conduction unit;
the second end of the second resistor is connected with the grounding end;
the first comparison unit is used for comparing a difference value between a first voltage value at two ends of the second resistor and a second voltage value output by a first pole of the gallium nitride device with a preset threshold value when the gallium nitride device is conducted, and outputting a comparison result;
The control module is used for generating a first control signal according to the comparison result.
Optionally, the control module further includes: the driving unit is connected with the first comparison unit; the first comparing unit is specifically configured to: when the difference value between the first voltage value and the second voltage value is larger than a preset threshold value, a first comparison signal is generated;
The driving unit is used for generating a turn-off control signal according to the first comparison signal; the first control signal comprises a turn-off control signal, and the turn-off control signal is used for controlling the gallium nitride device to be turned off so as to protect the gallium nitride device from exiting from a current saturation state.
Optionally, the current detection module includes a third resistor;
The unidirectional conduction unit comprises a diode;
the first end of the third resistor is connected with the first electrode of the gallium nitride device, and the second end of the third resistor is grounded;
the anode of the diode is connected with the third end of the voltage division network, and the cathode of the diode is connected with the second diode of the gallium nitride device.
Optionally, the control circuit of the gallium nitride device further includes:
The temperature detection module is connected with the control module and is used for detecting temperature values of the gallium nitride device and the control module;
the control module is used for generating a second control signal according to the temperature value; the second control signal is used for controlling the turn-off of the gallium nitride device.
Optionally, the temperature detection module includes:
The temperature sensing unit, the second resistor network, the reference unit and the second comparison unit;
The first end of the temperature sensing unit is connected with the first power input end and the first end of the reference unit, the second end of the temperature sensing unit is connected with the first end of the second resistor network and the inverting input end of the second comparison unit, the second end of the second resistor network is connected with the second end of the reference unit and the second power input end, the output end of the reference unit is connected with the non-inverting input end of the second comparison unit, and the output end of the second comparison unit is connected with the control module;
The temperature sensing unit is used for increasing the current of the temperature sensing unit when the temperature value is higher than a preset temperature threshold value, the voltage value of the first node is higher than the voltage value output by the output end of the reference unit, and the output end of the second comparison unit outputs a turnover level signal;
the control module is connected with the output end of the second comparison unit and is used for generating a second control signal according to the turnover level signal.
Optionally, the temperature detection module further includes:
The first end of the reset unit is connected with the second end of the second resistance network, the second end of the reset unit is connected with the third end of the second resistance network, and the control end of the reset unit is connected with the output end of the second comparison unit;
The reset unit is used for conducting according to the inversion level signal output by the output end of the second comparison unit so as to adjust the voltage value of the first node.
Optionally, the reference unit includes: the first constant current source and the first switch tube are connected, the first end of the first constant current source is connected with the first power input end, the second end of the first constant current source is connected with the first pole of the first switch tube and the non-inverting input end of the second comparison unit is connected with the second node; the control end of the first switching tube is connected with the second pole of the first switching tube and the second power input end; the first constant current source is used for outputting a constant current signal so as to maintain the reference voltage of the non-inverting input end of the second comparison unit constant;
The second resistor network includes: the first end of the fourth resistor is connected with the first node, the second end of the fourth resistor is connected with the first end of the fifth resistor and the third end of the second resistor network, and the second end of the fifth resistor is connected with the second power input end;
the temperature sensing unit includes: the positive temperature coefficient current source is connected between the first power input end and the first node.
According to another aspect of the present invention, there is provided an electronic apparatus including: the control circuit of the gallium nitride device and the gallium nitride device provided in the first aspect, wherein the output end of the control circuit of the gallium nitride device is connected with the control end of the gallium nitride device.
The control circuit of the gallium nitride device provided by the embodiment of the invention detects the voltage value of the first pole of the gallium nitride device by arranging the current detection module and transmits the voltage value of the first pole of the gallium nitride device to the control module. And detecting a voltage value of a second pole of the gallium nitride device through a voltage detection module. And determining, by the control module, a current value of the gallium nitride device according to the resistance value of the current detection module and the voltage value of the first pole of the gallium nitride device, and calculating a voltage value between the second pole and the first pole of the gallium nitride device according to the current value of the gallium nitride device and the voltage value of the second pole of the gallium nitride device. The control module may control a conduction state of the gallium nitride device according to a voltage value between the first pole and the second pole of the gallium nitride device. By the arrangement, the detection effect of the on-voltage of the gallium nitride device is improved, and the problem that the system current exceeds the saturation current of the gallium nitride device or the current saturation occurs because of overhigh temperature rise, so that the reliability of the gallium nitride device is affected is solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the drawings needed in the description of the embodiments of the present invention, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the contents of the embodiments of the present invention and these drawings without inventive effort for those skilled in the art.
Fig. 1 is a schematic structural diagram of a control circuit of a gallium nitride device according to an embodiment of the present invention;
Fig. 2 is a schematic structural diagram of a control circuit of another gallium nitride device according to an embodiment of the invention;
Fig. 3 is a schematic structural diagram of a control circuit of a gallium nitride device according to another embodiment of the present invention;
Fig. 4 is a schematic structural diagram of a temperature detection module of a control circuit of a gallium nitride device according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Based on the above technical problems, the present embodiment proposes the following solutions:
Fig. 1 is a schematic structural diagram of a control circuit of a gallium nitride device according to an embodiment of the present invention. Referring to fig. 1, a control circuit of a gallium nitride device according to an embodiment of the present invention includes: a current detection module 1, a voltage detection module 2 and a control module 3; the current detection module 1 is connected between the first pole of the gallium nitride device Q1 and the control module 3; the current detection module 1 is used for collecting a voltage value of a first pole of the gallium nitride device Q1 so as to determine a conduction current value of the gallium nitride device Q1; the voltage detection module 2 is connected between the second pole of the gallium nitride device Q1 and the control module 3; the voltage detection module 2 is used for collecting a voltage value of a second pole of the gallium nitride device Q1 so as to determine a target voltage value between the first pole and the second pole of the gallium nitride device Q1; the output end of the control module 3 is used for being connected with the control end of the gallium nitride device Q1, and the control module 3 is used for generating a first control signal according to the on current value and the target voltage value; the first control signal is used to control the on state of the gallium nitride device Q1.
Specifically, the first pole may be a source of the gallium nitride device Q1, and the second pole may be a drain of the gallium nitride device Q1. The target voltage value may be a source-drain voltage value when the gallium nitride device Q1 is turned on.
The current detection module 1 is configured to detect a voltage value of the first pole of the gallium nitride device Q1, and transmit the voltage value of the first pole of the gallium nitride device Q1 to the control module 3. The control module 3 determines the current value of the gallium nitride device Q1 based on the resistance value of the current detection module 1 and the voltage value of the first pole of the gallium nitride device Q1.
The voltage detection module 2 is connected to the current detection module 1. The voltage detection module 2 is used for detecting the voltage value of the second pole of the gallium nitride device Q1. The specific working process is as follows: the control module 3 may calculate a voltage value between the second pole and the first pole of the gallium nitride device Q1, for example, a source-drain voltage of the gallium nitride device Q1, according to the current value of the gallium nitride device Q1 and the voltage value of the second pole of the gallium nitride device Q1. The control module 3 may compare the voltage value between the first pole and the second pole of the gallium nitride device Q1 with a preset threshold value, and generate a control signal according to the comparison result. The first control signal is used to control the on state of the gallium nitride device Q1.
For example, the preset threshold may be set to a threshold voltage at which the gallium nitride device Q1 enters current saturation. When the voltage value between the first pole and the second pole of the gallium nitride device Q1 is smaller than or equal to the preset threshold value, the control signal generated by the control module 3 can control the gallium nitride device Q1 to be turned on, so that the gallium nitride device Q1 which does not enter current saturation is normally turned on, and stable operation of the gallium nitride device Q1 is ensured. When the voltage value between the first pole and the second pole of the gallium nitride device Q1 is larger than a preset threshold value, the control signal generated by the control module 3 can control the gallium nitride device Q1 to be turned off, so that the gallium nitride device Q1 entering current saturation is turned off in time, and damage to the gallium nitride device Q1 is avoided.
The control circuit of the gallium nitride device Q1 provided in this embodiment detects the voltage value of the first pole of the gallium nitride device Q1 by setting the current detection module 1, and transmits the voltage value of the first pole of the gallium nitride device Q1 to the control module 3. And detects the voltage value of the second pole of the gallium nitride device Q1 by the voltage detection module 2. And determining, by the control module 3, a current value of the gallium nitride device Q1 according to the resistance value of the current detection module 1 and a voltage value of a first pole of the gallium nitride device Q1, and calculating a voltage value between the second pole and the first pole of the gallium nitride device Q1 according to the current value of the gallium nitride device Q1 and the voltage value of a second pole of the gallium nitride device Q1. The control module 3 may control the on state of the gallium nitride device Q1 according to the voltage value between the first and second poles of the gallium nitride device Q1. By the arrangement, the detection effect on the on voltage of the gallium nitride device Q1 is improved, and the problem that the system current exceeds the saturation current of the gallium nitride device Q1 or the current saturation occurs due to overhigh temperature rise and the reliability of the gallium nitride device Q1 is affected is solved.
Optionally, fig. 2 is a schematic structural diagram of a control circuit of another gallium nitride device according to an embodiment of the present invention. Fig. 3 is a schematic structural diagram of a control circuit of a gallium nitride device according to another embodiment of the present invention. On the basis of the above embodiment, in combination with fig. 2 and 3, the voltage detection module 2 may include: a direct current power supply unit 21, a first voltage dividing network 22 and a unidirectional conduction unit 23; the control module 3 comprises a first comparing unit 31; the first end of the direct current power supply unit 21 is connected with the first end of the first voltage division network 22, the second end of the direct current power supply unit 21 is connected with the second end of the first voltage division network 22, the third end of the first voltage division network 22 is connected with the first end of the unidirectional conduction unit 23, and the second end of the unidirectional conduction unit 23 is connected with the second pole of the gallium nitride device Q1 and the first input end of the first comparison unit 31; the first terminal of the current detection module 1 is connected to the first pole of the gallium nitride device Q1 and the second input terminal of the first comparison unit 31, and the second terminal of the current detection module 1 is connected to the second terminal of the dc power supply unit 21 and the ground terminal.
Specifically, the dc power supply unit 21 is configured to provide dc voltage. The first voltage dividing network 22 is used for dividing the direct current voltage output by the direct current power supply unit 21And performing partial pressure. The unidirectional conduction unit 23 is turned off reversely when the gallium nitride device Q1 is turned off, so that the reverse conduction of the voltage across the gallium nitride device Q1 to the dc power supply unit 21 can be prevented. The unidirectional conduction unit 23 is turned on in the forward direction when the gallium nitride device Q1 is turned on. The current detection module 1 may include a resistor. The first comparing unit 31 may include a comparator.
Optionally, with continued reference to fig. 2, based on the foregoing embodiments, the first voltage divider network 22 includes: a first resistor R1 and a second resistor R2; the first end of the first resistor R1 is connected with the first end of the direct current power supply unit 21, and the second end of the first resistor R1 is connected with the first end of the second resistor R2 and the first end of the unidirectional conduction unit 23; the second end of the second resistor R2 is connected with the grounding end; the first comparing unit 31 is configured to compare, when the gallium nitride device Q1 is turned on, a difference between the first voltage value at two ends of the second resistor R2 and the second voltage value output by the first pole of the gallium nitride device Q1 with a preset threshold value, and output a comparison result; the control module 3 is configured to generate a first control signal according to the comparison result.
Specifically, when the gallium nitride device Q1 is turned on, the second voltage value Vd outputted by the first electrode of the gallium nitride device Q1 is smaller than the dc voltageThe current flowing through the gallium nitride device Q1 is the on-current Id, and the voltage/>, across the second resistor R2 is monitored. The total current flowing through the first resistor R1 is/>. The current flowing through the second resistor R2 is/>The current flowing through unidirectional conduction cell 23 is I1,/>. This makes it possible to determine the threshold voltage Vf corresponding to the unidirectional conduction unit 23. So that the voltage across the second resistor R2 can be determined/>. The first voltage value is approximately equal to the voltage across the second resistor R2/>。
Fig. 2 illustrates a case where an input voltage Vin is applied between a first pole and a second pole of the gallium nitride device Q1, and Rdson represents an on-resistance of the gallium nitride device Q1, which is not limited in any way.
Optionally, with continued reference to fig. 2, the control module 3 further includes: a driving unit 32, the driving unit 32 being connected to the first comparing unit 31; the first comparing unit 31 specifically is configured to: when the difference value between the first voltage value and the second voltage value is larger than a preset threshold value, a first comparison signal is generated; the driving unit 32 is configured to generate a turn-off control signal according to the first comparison signal; the first control signal includes a turn-off control signal, which is used to control the gallium nitride device Q1 to turn off, so as to protect the gallium nitride device Q1 from exiting the current saturation state.
Specifically, the second voltage value Vs output from the first electrode of the gallium nitride device Q1 is determined from the product of the on-current Id of the gallium nitride device Q1 and the resistance value of the current detection module 1. When the voltage across the second resistor R2When the difference value between the first voltage value and the second voltage value Vs output by the first pole of the gallium nitride device Q1 is larger than a preset threshold value, a first comparison signal is generated. The driving unit 32 is configured to generate a turn-off control signal according to the first comparison signal, so as to control the gallium nitride device Q1 to turn off, so as to protect the gallium nitride device Q1 from exiting the current saturation state, thereby preventing the gallium nitride device Q1 from being damaged.
Optionally, with continued reference to fig. 2, based on the above embodiments, the current detection module 1 includes a third resistor R3; the unidirectional conduction unit 23 includes a diode D1; the first end of the third resistor R3 is connected with the first pole of the gallium nitride device Q1, and the second end of the third resistor R3 is grounded; the anode of the diode D1 is connected with the third end of the voltage division network, and the cathode of the diode D1 is connected with the second diode of the gallium nitride device Q1.
Optionally, with continued reference to fig. 3, based on the foregoing embodiment, the control circuit of the gallium nitride device may further include: the temperature detection module 4 is connected with the control module 3, and the temperature detection module 4 is used for detecting temperature values of the gallium nitride device Q1 and the control module 3; the control module 3 is used for generating a second control signal according to the temperature value; the second control signal is used to control the turn-off of the gallium nitride device Q1.
Specifically, the temperature detection module 4 may detect the temperature of the control module 3, the temperature of the gallium nitride device Q1, or the ambient temperature. When the gallium nitride device Q1 is saturated with current, the on-resistance of the gallium nitride device Q1 increases, and the temperature of the gallium nitride device Q1 increases. The control module 3 can control the turn-off of the gallium nitride device Q1 according to the temperature value, so as to avoid damage caused by overhigh temperature of the gallium nitride device Q1 or overvoltage caused by current saturation, thereby protecting the gallium nitride device Q1.
In fig. 3, the OTP is exemplarily shown as the temperature detection module 4, the cs detection is shown as the current detection module 1, the vds detection is shown as the voltage detection module 2, the control signal output by the control module is a PWM signal, D is shown as the drain of the gallium nitride device, and S is shown as the source of the gallium nitride device, which is not limited herein.
Optionally, fig. 4 is a schematic structural diagram of a temperature detection module of a control circuit of a gallium nitride device according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 4, the temperature detection module 4 may include: a temperature sensing unit 41, a second resistor network 42, a reference unit 43 and a second comparison unit 44; a first terminal of the temperature sensing unit 41 is connected to the first power input terminal VDD and a first terminal of the reference unit 43, a second terminal of the temperature sensing unit 41 is connected to the first node with a first terminal of the second resistor network 42 and an inverting input terminal of the second comparison unit 44A second end of the second resistor network 42 is connected with a second end of the reference unit 43 and a second power input end VSS, an output end of the reference unit 43 is connected with a non-inverting input end of the second comparison unit 44, and an output end of the second comparison unit 44 is connected with the control module 3; the temperature sensing unit 41 is configured to increase the current of the temperature sensing unit 41 when the temperature value is higher than a preset temperature threshold value, and the first node/>The voltage value of the second comparison unit 44 is higher than the voltage value output by the output terminal of the reference unit 43; the control module 3 is connected to the output end of the second comparing unit 44, and the control module 3 is configured to generate a second control signal according to the flip level signal.
Specifically, the reference unit 43 is used for generating a reference voltage. The reference signal is output to the non-inverting input of the second comparing unit 44. The inverting input of the second comparison unit 44 is connected to the temperature sensing unit 41 and the second resistor network 42. Under normal temperature conditions, the current of the temperature sensing unit 41 is small, the first nodeThe second comparing unit 44 outputs a first level signal, for example, a high level signal, such that the control module 3 controls the gallium nitride device Q1 to be turned on.
When the temperature rises and exceeds the preset temperature threshold, the current output by the temperature sensing unit 41 rises, the first nodeThe second comparing unit 44 outputs a second level signal, for example, a low level signal, so that the control module 3 controls the gallium nitride device Q1 to be turned off. The arrangement is such that the control module 3 can control the turn-off of the gallium nitride device Q1 according to the temperature value, so as to avoid damage caused by overhigh temperature of the gallium nitride device Q1 or overvoltage caused by current saturation, and further protect the gallium nitride device Q1.
Optionally, with continued reference to fig. 4 based on the foregoing embodiments, the temperature detection module 4 may further include: the first end of the reset unit 45 is connected with the second end of the second resistance network 42, the second end of the reset unit 45 is connected with the third end of the second resistance network 42, and the control end of the reset unit 45 is connected with the output end of the second comparison unit 44; the reset unit 45 is turned on according to the flip level signal outputted from the output terminal of the second comparing unit 44 to adjust the first nodeIs a voltage value of (a).
In particular, the reset unit 45 may include a switching tube. By setting the reset unit 45 such that the temperature value falls below the preset temperature threshold, the current output by the temperature sensing unit 41 falls such that the first node/>The second comparing unit 44 outputs the first level signal. The control terminal of the reset unit 45 receives the first level signal to turn on to short-circuit part of the resistors in the second resistor network 42, so that the first node/>The voltage of (2) is kept lower than the reference voltage, so that the control module 3 outputs a stable control signal to control the gallium nitride device Q1 to be turned on.
Note that, in fig. 4, the case where otp_out represents the output terminal of the second comparing unit 44 is exemplarily shown, and no limitation is made herein.
Optionally, with continued reference to fig. 4, based on the above embodiments, the reference unit 43 includes: a first constant current source IP2 and a first switch tube Q2, wherein a first end of the first constant current source IP2 is connected with a first power input end VDD, a second end of the first constant current source IP2 is connected with a first pole of the first switch tube Q2 and a non-inverting input end of a second comparison unit 44 is connected with a second node; The control end of the first switching tube Q2 is connected with the second pole of the first switching tube Q2 and the second power input end VSS; the first constant current source IP2 is configured to output a constant current signal to maintain a constant reference voltage at the non-inverting input terminal of the second comparing unit 44; the second resistor network 42 includes: a fourth resistor R4 and a fifth resistor R5, the first end of the fourth resistor R4 and the first node/>The second end of the fourth resistor R4 is connected with the first end of the fifth resistor R5 and the third end of the second resistor network 42, and the second end of the fifth resistor R5 is connected with the second power input end VSS; the temperature sensing unit 41 includes: a positive temperature coefficient current source IP1, wherein the positive temperature coefficient current source IP1 is connected with the first power input end VDD and the first node/>Between them.
Specifically, the first power input terminal VDD may be at a first level, for example, a high level, and the second power input terminal VSS may be at a low level. The positive temperature coefficient current source IP1 increases with the temperature, the output current increases, the partial pressure of the fourth resistor R4 and the fifth resistor R5 increases with the current increase, and the first node is regulatedIs set in the above-described voltage range.
The embodiment provides an electronic device. The electronic device provided in this embodiment includes the control circuit of the gallium nitride device and the gallium nitride device provided in any of the embodiments, where an output end of the control circuit of the gallium nitride device is connected to a control end of the gallium nitride device. The electronic device provided in this embodiment has the beneficial effects of the control circuit of the gallium nitride device provided in any embodiment, and is not described herein.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A control circuit for a gallium nitride device, comprising:
The device comprises a current detection module, a voltage detection module and a control module;
The current detection module is connected between the first pole of the gallium nitride device and the control module; the current detection module is used for collecting a voltage value of a first pole of the gallium nitride device so as to determine a conduction current value of the gallium nitride device;
The voltage detection module is connected between a second pole of the gallium nitride device and the control module; the voltage detection module is used for collecting the voltage value of the second pole of the gallium nitride device so as to determine a target voltage value between the first pole and the second pole of the gallium nitride device;
The output end of the control module is used for being connected with the control end of the gallium nitride device, and the control module is used for generating a first control signal according to the on current value and the target voltage value; the first control signal is used for controlling the conduction state of the gallium nitride device;
The voltage detection module includes:
the device comprises a direct current power supply unit, a first voltage division network and a unidirectional conduction unit; the control module comprises a first comparison unit;
the first end of the direct current power supply unit is connected with the first end of the first voltage division network, the second end of the direct current power supply unit is connected with the second end of the first voltage division network, the third end of the first voltage division network is connected with the first end of the unidirectional conduction unit, and the second end of the unidirectional conduction unit is connected with the second pole of the gallium nitride device and the first input end of the first comparison unit;
the first end of the current detection module is connected with the first pole of the gallium nitride device and the second input end of the first comparison unit, and the second end of the current detection module is connected with the second end of the direct current power supply unit and the grounding end.
2. The circuit of claim 1, wherein the first voltage divider network comprises: a first resistor and a second resistor;
the first end of the first resistor is connected with the first end of the direct current power supply unit, and the second end of the first resistor is connected with the first end of the second resistor and the first end of the unidirectional conduction unit;
the second end of the second resistor is connected with the grounding end;
The first comparison unit is used for comparing a difference value between a first voltage value at two ends of the second resistor and a second voltage value output by the first electrode of the gallium nitride device with a preset threshold value when the gallium nitride device is conducted, and outputting a comparison result;
the control module is used for generating the first control signal according to the comparison result.
3. The circuit of claim 2, wherein the control module further comprises: the driving unit is connected with the first comparison unit;
The first comparing unit is specifically configured to: generating a first comparison signal when the difference value between the first voltage value and the second voltage value is larger than the preset threshold value;
the driving unit is used for generating a turn-off control signal according to the first comparison signal; the first control signal comprises the turn-off control signal, and the turn-off control signal is used for controlling the gallium nitride device to be turned off so as to protect the gallium nitride device from exiting a current saturation state.
4. The circuit of claim 1, wherein the circuit comprises a plurality of capacitors,
The current detection module comprises a third resistor;
The unidirectional conduction unit comprises a diode;
the first end of the third resistor is connected with the first pole of the gallium nitride device, and the second end of the third resistor is grounded;
And the anode of the diode is connected with the third end of the voltage division network, and the cathode of the diode is connected with the second diode of the gallium nitride device.
5. The circuit of claim 1, wherein the control circuit of the gallium nitride device further comprises:
the temperature detection module is connected with the control module and is used for detecting temperature values of the gallium nitride device and the control module;
the control module is used for generating a second control signal according to the temperature value; the second control signal is used for controlling the turn-off of the gallium nitride device.
6. The circuit of claim 5, wherein the temperature detection module comprises:
The temperature sensing unit, the second resistor network, the reference unit and the second comparison unit;
The first end of the temperature sensing unit is connected with the first power input end and the first end of the reference unit, the second end of the temperature sensing unit is connected with the first end of the second resistor network and the inverting input end of the second comparison unit to be connected with a first node, the second end of the second resistor network is connected with the second end of the reference unit and the second power input end, the output end of the reference unit is connected with the non-inverting input end of the second comparison unit, and the output end of the second comparison unit is connected with the control module;
the temperature sensing unit is used for increasing the current of the temperature sensing unit when the temperature value is higher than a preset temperature threshold value, the voltage value of the first node is higher than the voltage value output by the output end of the reference unit, and the output end of the second comparison unit outputs a turnover level signal;
The control module is connected with the output end of the second comparison unit and is used for generating the second control signal according to the turnover level signal.
7. The circuit of claim 6, wherein the temperature detection module further comprises:
The first end of the reset unit is connected with the second end of the second resistor network, the second end of the reset unit is connected with the third end of the second resistor network, and the control end of the reset unit is connected with the output end of the second comparison unit;
The reset unit is used for conducting according to the turnover level signal output by the output end of the second comparison unit so as to adjust the voltage value of the first node.
8. The circuit according to claim 6 or 7, wherein,
The reference unit includes: the first constant current source and the first switch tube are connected with the first power input end, and the second end of the first constant current source and the first pole of the first switch tube are connected with the non-inverting input end of the second comparison unit at the second node; the control end of the first switching tube is connected with the second pole of the first switching tube and the second power input end; the first constant current source is used for outputting a constant current signal so as to maintain the constant reference voltage of the non-inverting input end of the second comparison unit;
the second resistor network includes: a first end of the fourth resistor is connected with the first node, a second end of the fourth resistor is connected with the first end of the fifth resistor and a third end of the second resistor network, and a second end of the fifth resistor is connected with the second power input end;
The temperature sensing unit includes: and the positive temperature coefficient current source is connected between the first power input end and the first node.
9. An electronic device, comprising: a gallium nitride device control circuit and a gallium nitride device according to any one of claims 1 to 8, wherein an output terminal of the gallium nitride device control circuit is connected to a control terminal of the gallium nitride device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410399007.9A CN117997325A (en) | 2024-04-03 | 2024-04-03 | Control circuit and electronic device of gallium nitride device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410399007.9A CN117997325A (en) | 2024-04-03 | 2024-04-03 | Control circuit and electronic device of gallium nitride device |
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| Publication Number | Publication Date |
|---|---|
| CN117997325A true CN117997325A (en) | 2024-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410399007.9A Pending CN117997325A (en) | 2024-04-03 | 2024-04-03 | Control circuit and electronic device of gallium nitride device |
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| Country | Link |
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| CN (1) | CN117997325A (en) |
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- 2024-04-03 CN CN202410399007.9A patent/CN117997325A/en active Pending
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