CN115677358A - 用于涂覆陶瓷纤维的系统和方法 - Google Patents
用于涂覆陶瓷纤维的系统和方法 Download PDFInfo
- Publication number
- CN115677358A CN115677358A CN202210841343.5A CN202210841343A CN115677358A CN 115677358 A CN115677358 A CN 115677358A CN 202210841343 A CN202210841343 A CN 202210841343A CN 115677358 A CN115677358 A CN 115677358A
- Authority
- CN
- China
- Prior art keywords
- frame
- ceramic fibers
- ceramic
- coating material
- fibers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000835 fiber Substances 0.000 title claims abstract description 182
- 239000000919 ceramic Substances 0.000 title claims abstract description 137
- 238000000576 coating method Methods 0.000 title claims abstract description 102
- 239000011248 coating agent Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims description 61
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000011153 ceramic matrix composite Substances 0.000 claims abstract description 44
- 238000004891 communication Methods 0.000 claims abstract description 11
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 239000011800 void material Substances 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000013043 chemical agent Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 description 25
- 239000002243 precursor Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 238000004804 winding Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 239000002002 slurry Substances 0.000 description 9
- 230000002787 reinforcement Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000000626 liquid-phase infiltration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 229920006184 cellulose methylcellulose Polymers 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012710 chemistry, manufacturing and control Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011226 reinforced ceramic Substances 0.000 description 1
- 239000012783 reinforcing fiber Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 210000001170 unmyelinated nerve fiber Anatomy 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62844—Coating fibres
- C04B35/62857—Coating fibres with non-oxide ceramics
- C04B35/6286—Carbides
- C04B35/62863—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62844—Coating fibres
- C04B35/62857—Coating fibres with non-oxide ceramics
- C04B35/62865—Nitrides
- C04B35/62868—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62844—Coating fibres
- C04B35/62857—Coating fibres with non-oxide ceramics
- C04B35/62865—Nitrides
- C04B35/62871—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62844—Coating fibres
- C04B35/62857—Coating fibres with non-oxide ceramics
- C04B35/62873—Carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62884—Coating the powders or the macroscopic reinforcing agents by gas phase techniques
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M23/00—Treatment of fibres, threads, yarns, fabrics or fibrous goods made from such materials, characterised by the process
- D06M23/06—Processes in which the treating agent is dispersed in a gas, e.g. aerosols
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5216—Inorganic
- C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
- C04B2235/5244—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Textile Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的系统,包括具有多个框架构件的框架,多个框架构件布置成在其间形成空隙。框架构件中的至少一个包括中空本体和限定在中空本体中的至少一个穿孔。因此,陶瓷纤维能够固定在框架的相应端并延伸穿过空隙。框架还包括与穿孔流体连通的入口,以便允许涂层材料流入并通过中空本体,并在陶瓷纤维之一的至少一部分的位置处流出穿孔。这样,涂层材料被构造为使陶瓷纤维之一的部分与框架分离,使得该部分被均匀地涂覆有涂层材料。
Description
技术领域
本公开大体上涉及用于加工陶瓷纤维的系统和方法,并且更具体地涉及用在制造陶瓷基质复合材料(CMC)制品中的涂覆和/或加工陶瓷纤维的系统和方法。
背景技术
陶瓷基质复合材料(CMC)通常包括嵌入陶瓷基质材料中的陶瓷纤维增强材料。增强材料可以是随机分散在基质材料中的不连续短纤维或定向在基质材料内的连续纤维或纤维束。在基质破裂的情况下,增强材料充当CMC的承载成分。反过来,陶瓷基质保护增强材料,保持其纤维的取向,并用于分散对增强材料的负载。硅基CMC,例如作为基质和/或增强材料的碳化硅(SiC),由于它们的高温性能,而在高温应用中变得特别受关注,例如用于燃气涡轮的部件,包括飞行器燃气涡轮发动机和陆基燃气涡轮发动机。SiC纤维也被用作各种其他陶瓷基质材料的增强材料,包括TiC、Si3 N4和Al2O3。
连续纤维增强陶瓷复合材料(CFCC)是一种特殊类型的CMC,它为各种高温承载应用提供轻质、高强度和高刚度,例如在护罩、燃烧器衬里、轮叶(喷嘴)、叶片(动叶(bucket))和燃气涡轮的其他高温部件中。由通用电气公司开发的名为的CFCC材料的一个显著示例是在SiC和元素硅或硅合金的基质中包含连续的SiC纤维。
在CMC的制造中可以采用各种技术,包括化学气相渗透(CVI)、湿式滚筒缠绕、铺层、层压、热解和熔体渗透(MI)。这些制造技术已与工具或模具结合使用,以通过包括在各个加工阶段应用热和化学工艺的工艺来生产近净形制品。此类工艺的示例,特别是对于SiC/Si-SiC(纤维/基质)CFCC材料的示例,在美国专利号为5,015,540、5,330,854、5,336,350、5,628,938、6,024,898、6,258,737、6,403,158和6,503,441以及美国专利申请公开号为2004/0067316中公开。
制造CMC的一种工艺需要使用CMC预浸料,其通常是片状结构,包括用含有基质材料的前体和一种或多种有机粘合剂的浆料浸渍的增强纤维。预浸料必须经过加工(例如,烧制)以将前体转化为所需的陶瓷基质材料。用于CFCC材料的预浸料通常包括二维纤维阵列,该二维纤维阵列包括单层对齐的丝束(单独的长丝组成的束),浸渍有基质前体以形成通常的二维薄层。然后将所得预浸料的多层堆叠并压实(debulk)以形成层压预成型件,该过程称为“铺层”。预浸料通常但并非必须排列成使得相邻预浸料的丝束彼此横向(例如,垂直)定向,从而在预成型件的薄层平面(对应于最终CMC制品的主要(承载)方向)中提供更大的强度。作为一个示例,图1表示包括多个薄层12的CMC制品10的表面区域,每个薄层是单独的预浸料带或片材的结果。也如图1所示,每个薄层12包含由单向对齐的纤维17构成的陶瓷增强物,该纤维17被包裹在陶瓷基质14中,该陶瓷基质14通过陶瓷基质前体的转化(例如,在烧制之后)形成。
如图2所示,用于制造预浸料CMC预成型件的工艺包括缠绕技术以将纤维20(单独的长丝或丝束)形成单向预浸料带,然后将其用于复合预成型件的铺层。如图2所示,一些缠绕技术涉及对纤维20进行涂覆。纤维20被涂覆用于多种目的,例如在复合加工过程中保护它们、改变纤维-基质界面强度以及促进或防止纤维和基质的机械和/或化学结合。已经开发了许多不同的技术来将涂层应用于陶瓷纤维,例如浆料浸渍、溶胶-凝胶、溅射和化学气相沉积(CVD)。在这些技术中,CVD可以被认为是最成功地生产具有均匀厚度和受控成分的不渗透涂层。在典型的CVD工艺中,纤维和反应物被加热到高温,涂层前体在高温下分解并沉积为涂层。
对于通过缠绕技术加工的复合材料,连续纤维涂覆工艺是优选的。在连续涂覆工艺中,如图2所示,纤维20连续通过含有涂层前体24的CVD反应器22以形成涂层纤维26。也如图2所示,连续纤维涂覆工艺可涉及一次使单根纤维丝束或长丝通过CVD反应器22。涂覆可以在低压下进行,并且纤维20可以低速传送通过反应器22,以确保涂层纤维26上的均匀涂覆。这种CVD涂覆工艺在纤维丝束被涂覆时会遭受大量断裂纤维和“松散”的纤维(即“绒毛(fuzz)”),这会降低工艺的生产量或产量。尽管这种纤维涂覆工艺可以提供有效的涂层纤维26,但仍需要进一步改进CVD涂层纤维,以获得更高生产率。
如图2所示,缠绕技术还可以通过用基质前体浸渍涂层纤维26而将涂层纤维26(长丝或丝束)形成为单向预浸料带。例如,用于浸渍涂层陶瓷纤维26的湿式滚筒缠绕工艺可能需要拉动陶瓷纤维26通过包括合适的基质前体材料、有机粘合剂和溶剂的基质前体浆料混合物的浆料27,如图2所示。然后将所得的浸渍前体的纤维28缠绕在滚筒29周围以形成平面单向预浸料带。在接触滚筒29之前,浸渍前体的纤维28通常被拉动通过孔口以控制拾取的浆料的量。通过转位滚筒29(和/或浆料27和孔口),浸渍前体的纤维28以恒定节距铺设以产生连续的、平面的单向预浸料带。在缠绕浸渍前体的纤维28之前,可以用释放片材包裹滚筒29,从而可以更容易地将所得预浸料带从滚筒29上取下。当在滚筒29上时,可以允许预浸料带通过让溶剂蒸发来风干。或者,可以将带从滚筒29上切下,平放,然后允许风干。
通过这种湿式滚筒缠绕工艺生产的预浸料带可具有与滚筒29上的纤维28的节距相对应的表面粗糙度或波纹度。纤维和基质在带上的分布也可能因为节距而发生变化。此外,因为纤维在缠绕过程中处于张力下,浸渍的纤维28可能倾向于被拉到滚筒表面上,从而产生在接触滚筒29的带的表面处成比例地具有更多纤维并且在背对滚筒29的带的表面成处比例地具有更多的基质前体的预浸料带。
当使用丝束时,这种湿式滚筒缠绕工艺还可能遭受大量断裂纤维和松散粘附的纤维20(即,“绒毛”),这可能断裂并导致孔口堵塞。因此,滚筒缠绕操作可能需要操作员持续监督,以便在发生此类堵塞时将其清除。
滚筒缠绕工艺的另一个复杂性可能围绕在缠绕过程中用浆料27完全浸渍(即,润湿)纤维20的必要性,这需要纤维16花费足够的时间浸没在浆料27中。该浸没时间(对于某些工艺而言可能约为5秒)可能会限制纤维16拉拔通过浆料27浴的速度。因此,滚筒缠绕100米纤维20丝束所需的时间可能相对较长。
因此,在2017年10月5日提交并转让给通用电气公司的美国专利号为10,370,292、名称为“用于处理陶瓷纤维的设备和方法”中阐述了对纤维涂覆工艺的改进。特别地,'292专利描述了一种陶瓷纤维处理设备,例如图3中所示的设备32。此外,如图所示,设备32包括框架40,框架40具有延伸到第二部分44的第一部分42。此外,如图所示,框架40包括第一间隔构件46和/或第二间隔构件48,它们在第一部分42和第二部分44之间延伸以限定空隙50。因此,如图所示,单向陶瓷纤维30延伸穿过由框架40限定的空隙50以形成平面阵列34。例如,单向陶瓷纤维30可以基本上沿着穿过空隙50的平面布置或定位。陶瓷纤维40中的至少一根可以包括多根单独的陶瓷长丝,例如丝束。框架40还可以包括上框架部分52和下框架部分54。因此,可以通过化学气相沉积(CVD)工艺将至少一层涂层沉积在固定在框架40中的陶瓷纤维30上。例如,一个或多个框架40可以定位在CVD反应器内并在其中加工以在陶瓷纤维30上沉积涂层。
因此,本领域不断寻求新的和改进的系统和方法,用于涂覆和/或加工陶瓷纤维(以形成预浸料)以生产CMC。
发明内容
本公开的方面和优点将在以下描述中部分阐述,或者可以从描述中显而易见,或者可以通过本公开的实践而获知。
在一个方面,本公开涉及一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的系统。该系统包括具有多个框架构件的框架,多个框架构件布置成在其间形成空隙。多个框架构件中的至少一个包括中空本体和限定在中空本体中的至少一个穿孔。陶瓷纤维能够固定在框架的相应端并延伸穿过空隙。该系统还包括入口,该入口与穿孔流体连通以允许涂层材料流入并通过中空本体,并在陶瓷纤维之一的至少一部分的位置处流出穿孔。这样,涂层材料被构造为使陶瓷纤维之一的部分与框架分离,使得该部分被均匀地涂覆有涂层材料。
在另一个方面,本公开涉及一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的方法。该方法包括提供具有多个框架构件的框架,多个框架构件布置成在其间形成空隙。进一步,多个框架构件中的至少一个具有中空本体和限定在中空本体中的至少一个穿孔。该方法进一步包括将陶瓷纤维固定在框架的相应端,使得陶瓷纤维延伸穿过空隙。该方法还包括提供与限定在中空本体中的穿孔流体连通的入口。此外,该方法包括将涂层材料注入并通过入口,使得涂层材料流过中空本体并在陶瓷纤维之一的至少一部分的位置处流出穿孔。涂层材料使陶瓷纤维之一的部分与框架分离,使得该部分被均匀地涂覆有涂层材料。
本公开的这些和其他特征、方面和优点将通过参考以下描述和所附权利要求变得更好理解。并入本说明书中并构成本说明书一部分的附图示出了本公开的实施例,并且与描述一起用于解释本公开的原理。
附图说明
在参考附图的说明书中阐述了针对本领域普通技术人员的本公开的完整且使能的公开,包括其最佳模式,其中:
图1示出了陶瓷基质复合材料(CMC)制品的一部分的横截面视图;
图2示出了根据传统结构的陶瓷纤维涂覆和陶瓷纤维浸渍工艺;
图3示出了根据传统结构的用于涂覆陶瓷纤维的系统的立体图;
图4示出了根据本公开的用于涂覆陶瓷纤维的系统的一个实施例的立体图;
图5示出了图4的系统的顶视图;
图6示出了根据本公开的用于涂覆陶瓷纤维的系统的另一个实施例的立体图;
图7A示出了根据本公开的系统的一个实施例的示意图,特别示出了在涂覆工艺之前固定到其框架的陶瓷纤维;
图7B示出了根据本公开的系统的一个实施例的示意图,特别示出了在涂覆工艺之后固定到其框架的陶瓷纤维;
图8示出了根据本公开的系统的一个实施例的示意图,特别示出了在涂覆工艺之前的陶瓷纤维;
图9示出了图8的系统的示意图,特别示出了在涂覆工艺期间的陶瓷纤维;
图10示出了图8的系统的示意图,特别示出了在涂覆工艺之后的陶瓷纤维;和
图11示出了一个实施例的流程图,该流程图示出了根据本公开的用在制造CMC制品中的涂覆陶瓷纤维的方法。
具体实施方式
现在将详细参考本公开的实施例,其一个或多个示例在附图中示出。提供每个示例是为了解释本公开,而不是限制本公开。事实上,对于本领域的技术人员来说将显而易见的是,在不脱离本公开的范围的情况下,可以对本公开进行各种修改和变化。例如,作为一个实施例的一部分示出或描述的特征可以与另一个实施例一起使用以产生又一实施例。因此,本公开旨在涵盖落入所附权利要求及其等同物范围内的这些修改和变化。
当介绍本公开的各种实施例的元件时,冠词“一”、“一个’、“该”和“所述”旨在表示存在一个或多个元件。术语“包含”、“包括”和“具有”旨在具有包容性,并表示可能存在除所列元件之外的附加元件。参数的任何示例不排除所公开的实施例的其他参数。关于任何特定实施例在本文中描述、示出或以其他方式公开的部件、方面、特征、构造、布置、用途等可以类似地应用于本文公开的任何其他实施例。
通常,本公开涉及一种系统和方法,用于能够在固定在静态支撑框架上的陶瓷纤维丝束上实现界面涂层的均匀化学气相沉积。此外,在一个实施例中,框架可以包括各种框架构件,这些框架构件中形成有穿孔,用于直接在使用点处将化学试剂转移到纤维丝束。因此,纤维丝束可用于制造适用于高温应用的陶瓷基质复合材料,尤其是在燃气涡轮发动机中。
因此,本公开包括许多现有技术中不存在的优点。例如,在某些情况下,纤维丝束的表面接触点可以抑制前体气体的不均匀气流到达内部长丝。更具体地,与离接触点更远的剩余纤维相比,在框架附近的沉积量,尤其是在与框架直接接触的纤维和内部纤维长丝上的沉积量要低得多或不存在。因此,本公开中描述的孔解决了这个问题以向所有纤维丝束提供均匀的涂层。此外,降低了外部纤维长丝粘附到支撑框架的风险,因为纤维长丝被包裹在涂层中的风险较小。因此,当纤维长丝从框架移除时,涂层损失较少,从而保持CMC的所需机械性能。
因此,本公开提供了直接引导到纤维丝束中的涂层材料的前体传输,从而确保均匀的涂层厚度和分布。此外,通过使气态涂层材料流动通过中空框架和其中的孔,框架转变为用于纤维丝束的流化床,其中不与框架接触。因此,本公开消除了纤维丝束的未涂覆接触区域,从而改善了材料的机械性能。
现在参考附图,图4-10示出了根据本公开的示例性陶瓷纤维加工系统100的多个实施例的各种视图。如本文将描述的,系统100可促进或提供用于制造陶瓷基质复合材料(CMC)制品的陶瓷纤维的加工。例如,在一个实施例中,系统100可以促进通过批处理工艺涂覆陶瓷纤维和/或通过批处理工艺从涂覆的陶瓷纤维形成预浸料带(例如,渗透)。或者,多个系统100可以联接在一起,或者每个系统100可以形成较大结构的一部分或一段,这有利于通过连续工艺涂覆陶瓷纤维和/或通过连续工艺形成包括涂层陶瓷纤维的预浸料带。
此外,如图所示,系统100可以包括框架102,框架102具有布置成在其间形成空隙106的多个框架构件104。例如,在一个实施例中,如图4-6所示,多个框架构件104包括在框架102的第一端处的第一框架构件105和在框架102的相对的第二端处的第二框架构件107。此外,在另一个实施例中,如特别在图6中所示,框架102可以包括在第一框架构件105和第二框架构件107之间延伸的一个或多个附加框架构件109。例如,在所示实施例中,框架102包括在第一框架构件105和第二框架构件107之间延伸的多个附加框架构件109。因此,如图4-6所示,系统100还包括多个陶瓷纤维108,多个陶瓷纤维108可以延伸穿过空隙106,可以定位在空隙106内(全部地或部分地),或者可以与空隙106相邻。以这种方式,空隙106可以暴露陶瓷纤维108。
在特定实施例中,陶瓷纤维108可以是单独的陶瓷长丝或线束、陶瓷纤维丝束或单独的长丝和丝束的组合。如本文所用,“陶瓷纤维丝束”或简称为“丝束”,通常是指由多根单独的陶瓷长丝或松散线束组成的束。此外,在某些实施例中,丝束的长丝可以随机地交织或排列成图案,和/或可以是连续的或不连续的。例如,丝束可以包括断裂的长丝或长丝段。作为另一个示例,丝束的长丝可以基本上平行、扭曲或以其他方式排列。此外,在一个实施例中,丝束可以以与单根或单独的长丝基本相同的方式起作用。还将理解,如本文所用,“单独的陶瓷长丝”或简称为“单独的长丝”是指单一的或非成束的细长陶瓷构件。
特别参考图4-6,陶瓷纤维108可以固定在框架102的相应端并且可以以单向方式延伸穿过空隙106(例如,用于形成单向CMC预浸料带和/或单向CMC制品,如本领域已知的)。此外,如图所示,陶瓷纤维108可以以任何合适的方式固定到框架102以促进加工。例如,在一个实施例中,陶瓷纤维108可以在框架102的相应端处包裹、缠绕、系结或夹住。
此外,在一个实施例中,陶瓷纤维108在它们延伸穿过空隙106时可以包括相对较小的方向变化,但是陶瓷纤维108可以是单向的,使得它们基本上在第一方向上延伸并且彼此不交叉。类似地,陶瓷纤维108可以包括较小的方向变化,但是陶瓷纤维108可以是单向的,使得它们作为一个整体基本上沿着第一方向延伸和/或基本上彼此平行。在示例性实施例中,陶瓷纤维108可以是陶瓷纤维丝束或未成束的陶瓷纤维长丝。如果陶瓷纤维108包括至少一根丝束,则至少一根丝束作为一个整体可以是单向的(沿第一方向延伸)和/或构成丝束的陶瓷长丝可以是单向的。在一些其他实施例中,陶瓷纤维108的丝束的陶瓷长丝可以在与第一方向不同的方向上延伸(即,是非单向的,例如扭曲或交织的长丝),但是作为一个整体,该丝束可以基本上在第一方向上延伸,使得穿过空隙106的陶瓷纤维108是单向的。
此外,在一个实施例中,框架102可以具有形成空间或空隙106并支撑穿过空隙106的单向陶瓷纤维108的平面阵列110的任何设计、构造或机构。此外,在一个实施例中,对于任何对应尺寸或形状的平面阵列110,空隙106可以是任何尺寸或形状。此外,在一个实施例中,空隙106可以是其中提供平面阵列110的无阻碍区域。在一些实施例中,框架102可以被构造为使得围绕空隙106的区域(以及由此也围绕定位在其中的单向陶瓷纤维108的平面阵列110)是开放的或不受阻碍的。例如,框架102可以构造成使得单向陶瓷纤维108的平面阵列110上方和/或下方的区域不受阻碍,以允许无阻碍地涂覆陶瓷纤维108。
特别参考图6,多个框架构件104中的至少一个可以包括中空本体112和限定在中空本体112中的至少一个穿孔114。在另一个示例性实施例中,框架102的每个框架构件104可以具有中空本体112。此外,在另一个实施例中,一个或多个中空本体112可以包括多个穿孔114。在这样的实施例中,通常如图4-6所示,穿孔114可以布置在中空本体112的一个平面侧上。在替代实施例中,穿孔114可以围绕中空本体112以不同的图案布置。例如,穿孔114可以布置成围绕框架构件104的圆周延伸,或者可以在框架构件104上成行或成列布置。此外,在一个实施例中,穿孔114可以以任何合适的图案布置,以允许加工陶瓷纤维108。
特别参考图4-6,系统100还可以包括入口116,该入口116定位在框架构件104中的至少一个上并且与穿孔114流体连通以允许涂层材料118(图7A-7B)流入并通过中空本体112,并在陶瓷纤维108之一的至少一部分的位置处流出穿孔114。在示例性实施例中,如图4-6所示,多个框架构件104和陶瓷纤维108可以在至少包括陶瓷纤维108、入口116和框架构件104的涂覆室120中被涂覆。在某些图中,涂覆室120可以为简单起见而省略并进一步示出系统100的内部部件。在进一步的实施例中,多个气体入口116可以定位在多个框架构件104上以促进与框架构件104的中空本体112中的多个穿孔114的流体连通。
在特定实施例中,涂层材料118可以包括气态载体和化学试剂。因此,在这样的实施例中,气态载体被构造为使陶瓷纤维108之一的至少一部分或全部与框架102分离,从而产生如图7B和9所示的空间122,使得陶瓷纤维108的部分(或全部)均匀地涂覆有涂层材料118。更具体地,如图7A-9所示,示出了系统100的框架构件104之一的一个实施例的横截面视图,其中在涂覆工艺之前(图7和8)和期间(图7和9)陶瓷纤维108搁置在其上。例如,如图7和9所示,其中形成有多个穿孔114的框架构件104中的一个被示出,其中涂层材料118(由箭头表示)漂浮穿过其中。此外,如图7-9所示,陶瓷纤维108之一的一部分通过涂层材料118的流动(例如,由于气态载体施加的力)与框架构件104分离,从而为其提供更均匀的涂层。此外,如图10所示,在完成涂覆工艺之后,陶瓷纤维108回到抵靠框架构件104的搁置位置。
应当理解,适用于加工用于制造CMC预浸料和/或制品的陶瓷纤维的任何涂层材料118都可以用于涂覆陶瓷纤维108。例如,涂层材料118可以是对陶瓷纤维108的表面改性,其影响由陶瓷纤维108制成的所得CMC制品的纤维-基质界面。这可以通过抑制陶瓷纤维108与CMC制品的基质反应或结合的合适陶瓷材料的涂层材料118来实现。陶瓷涂层材料118可以允许陶瓷纤维108从基质中拉出和/或沿基质滑动,从而增加所得CMC制品的断裂韧性。然而,可以使用提供附加和/或不同功能和/或其他涂层类型(例如,非陶瓷)的涂层材料118。在某些实施例中,例如,涂层材料118可以是氮化硼、碳、碳化硅、氮化硅或其组合中的至少一种。在另一个示例性实施例中,氮化硼可以是硅掺杂的。此外,在特定实施例中,陶瓷纤维108可以是SiC纤维或C纤维。
现在参考图11,根据本公开的方面示出了用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的方法200的一个实施例的流程图。在特定实施例中,例如,方法200可用于涂覆本文所述的陶瓷纤维108。方法200在本文中被描述为使用例如图4-10所示的系统100来实施。然而,应当理解,所公开的方法200可以使用本领域中现在已知或以后开发的任何其他合适的系统来实施。此外,尽管为了说明和讨论的目的,图11描绘了以特定顺序执行的步骤,但本文描述的方法不限于任何顺序或布置。使用本文提供的公开内容的本领域技术人员将理解,可以以各种方式省略、重新布置、组合和/或调整方法的各个步骤。
如(202)所示,方法200包括提供具有多个框架构件的框架,多个框架构件布置成在其间形成空隙。此外,如所述的,多个框架构件中的至少一个具有中空本体和限定在中空本体中的至少一个穿孔。如(204)所示,方法200包括将陶瓷纤维固定在框架的相应端,使得陶瓷纤维延伸穿过空隙。如(206)所示,方法200包括提供与限定在中空本体中的穿孔流体连通的入口。如(208)所示,方法200包括将涂层材料注入并通过入口,使得涂层材料流过中空本体并在陶瓷纤维之一的至少一部分的位置处流出穿孔。因此,方法200可包括将系统100置于涂覆室中并通过多个框架构件104的中空本体112释放涂层材料118,从而促进陶瓷纤维108与框架构件104的分离并允许涂层材料118在陶瓷纤维108上的均匀分布。
在示例性实施例中,方法200可以包括在陶瓷纤维108上沉积多于一种涂层材料。例如,可以将多于一种类型的涂层材料施加到陶瓷纤维108以在所得CMC制品中提供特定和不同的特性。
本公开的各个方面和实施例由以下编号的条项限定:
条项1.一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的系统,所述系统包括:框架,所述框架包括多个框架构件,所述多个框架构件布置成在其间形成空隙,所述多个框架构件中的至少一个包括中空本体和限定在所述中空本体中的至少一个穿孔,其中,所述陶瓷纤维能够固定在所述框架的相应端以延伸穿过所述空隙;以及入口,所述入口与所述至少一个穿孔流体连通,以允许涂层材料流入并通过所述中空本体,并在所述陶瓷纤维之一的至少一部分的位置处流出所述至少一个穿孔,其中,所述涂层材料被构造为使所述陶瓷纤维之一的所述部分与所述框架分离,使得所述部分被均匀地涂覆有所述涂层材料。
条项2.根据前述条项中任一项所述的系统,其中,所述陶瓷纤维包括陶瓷纤维丝束或未成束的陶瓷纤维长丝中的至少一种。
条项3.根据前述条项中任一项所述的系统,其中,所述多个框架构件中的每一个包括中空本体。
条项4.根据前述条项中任一项所述的系统,其中,所述中空本体中的每一个包括多个穿孔。
条项5.根据前述条项中任一项所述的系统,其中,所述多个框架构件中的至少一个的所述多个穿孔围绕所述框架构件的圆周延伸或者在所述框架构件上成行或成列布置。
条项6.根据前述条项中任一项所述的系统,其中,所述多个框架构件进一步包括至少第一框架构件、第二框架构件和至少一个附加框架构件,所述至少一个附加框架构件延伸穿过所述第一框架构件和所述第二框架构件之间的所述空隙。
条项7.根据前述条项中任一项所述的系统,其中,所述涂层材料包括气态载体和化学试剂。
条项8.根据前述条项中任一项所述的系统,其中,所述涂层材料包括氮化硼、碳、碳化硅、氮化硅或其组合中的至少一种。
条项9.根据前述条项中任一项所述的系统,其中,所述氮化硼是硅掺杂的。
条项10.根据前述条项中任一项所述的系统,其中,所述多个框架构件和陶瓷纤维在涂覆室中被涂覆。
条项11.一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的方法,所述方法包括:提供具有多个框架构件的框架,所述多个框架构件布置成在其间形成空隙,所述多个框架构件中的至少一个具有中空本体和限定在所述中空本体中的至少一个穿孔;将所述陶瓷纤维固定在所述框架的相应端,使所述陶瓷纤维延伸穿过所述空隙;在所述框架中提供入口,所述入口与限定在所述中空本体中的所述至少一个穿孔流体连通;以及将涂层材料注入并通过所述入口,使得所述涂层材料流过所述中空本体并在所述陶瓷纤维之一的至少一部分的位置处流出所述至少一个穿孔,其中,所述涂层材料导致所述陶瓷纤维之一的所述部分与所述框架分离,使得所述部分被均匀地涂覆有所述涂层材料。
条项12.根据前述条项中任一项所述的方法,其中,所述陶瓷纤维包括陶瓷纤维丝束或未成束的陶瓷纤维长丝中的至少一种。
条项13.根据前述条项中任一项所述的方法,其中,所述多个框架构件中的每一个包括中空本体。
条项14.根据前述条项中任一项所述的方法,其中,所述中空本体中的每一个包括多个穿孔。
条项15.根据前述条项中任一项所述的方法,其中,所述多个框架构件中的至少一个的所述多个穿孔围绕所述框架构件的圆周延伸或者在所述框架构件上成行或成列布置。
条项16.根据前述条项中任一项所述的方法,其中,所述多个框架构件进一步包括至少第一框架构件、第二框架构件和至少一个附加框架构件,所述至少一个附加框架构件延伸穿过所述第一框架构件和所述第二框架构件之间的所述空隙。
条项17.根据前述条项中任一项所述的方法,其中,所述涂层材料包括气态载体和化学试剂。
条项18.根据前述条项中任一项所述的方法,其中,所述涂层材料包括氮化硼、碳、碳化硅、氮化硅或其组合中的至少一种。
条项19.根据前述条项中任一项所述的方法,其中,所述氮化硼是硅掺杂的。
条项20.根据前述条项中任一项所述的方法,其中,所述多个框架构件和陶瓷纤维在涂覆室中被涂覆。
该书面描述使用示例来公开本公开,包括最佳模式,并且还使本领域的任何技术人员能够实践本公开,包括制造和使用任何装置或系统以及执行任何结合的方法。本公开的可专利范围由权利要求书限定,并且可以包括本领域技术人员想到的其他示例。如果这些其他示例包括与权利要求书的字面语言没有区别的结构元件,或者如果它们包括与权利要求书的字面语言没有实质性差异的等效结构元件,则这些其他示例旨在落入权利要求书的范围内。
Claims (10)
1.一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的系统,其特征在于,所述系统包括:
框架,所述框架包括布置成在其间形成空隙的多个框架构件,所述多个框架构件中的至少一个框架构件包括中空本体和限定在所述中空本体中的至少一个穿孔,其中,所述陶瓷纤维能够固定在所述框架的相应端以延伸穿过所述空隙;
涂层材料;和
入口,所述入口与所述至少一个穿孔流体连通,以允许涂层材料流入并通过所述中空本体并在所述陶瓷纤维之一的至少一部分的位置处流出所述至少一个穿孔,
其中,所述至少一个穿孔被构造为使所述陶瓷纤维之一的所述部分与所述框架分离,使得所述部分被均匀地涂覆有所述涂层材料。
2.根据权利要求1所述的系统,其特征在于,其中,所述多个框架构件中的每一个框架构件包括中空本体。
3.根据权利要求2所述的系统,其特征在于,其中,所述中空本体中的每一个中空本体包括多个穿孔。
4.根据权利要求3所述的系统,其特征在于,其中,所述多个框架构件中的至少一个框架构件的所述多个穿孔围绕所述框架构件的圆周延伸或者在所述框架构件上成行或成列布置。
5.根据权利要求3所述的系统,其特征在于,其中,所述多个框架构件进一步包括至少第一框架构件、第二框架构件和至少一个附加框架构件,所述至少一个附加框架构件延伸穿过所述第一框架构件和所述第二框架构件之间的所述空隙。
6.根据权利要求1所述的系统,其特征在于,其中,所述涂层材料包括气态载体和化学试剂。
7.根据权利要求6所述的系统,其特征在于,其中,所述涂层材料包括氮化硼、碳、碳化硅、氮化硅或其组合中的至少一种。
8.根据权利要求7所述的系统,其特征在于,其中,所述氮化硼是硅掺杂的。
9.根据权利要求7所述的系统,其特征在于,其中,所述多个框架构件和陶瓷纤维在涂覆室中被涂覆。
10.一种用在制造陶瓷基质复合材料(CMC)制品中的涂覆陶瓷纤维的方法,其特征在于,所述方法包括:
将陶瓷纤维固定到框架,使得所述陶瓷纤维延伸穿过由所述框架的多个框架构件限定的空隙,其中,所述多个框架构件中的至少一个框架构件具有中空本体,所述中空本体中限定有与所述空隙流体连通的至少一个穿孔;和
将涂层材料注入并通过所述框架中的入口,所述入口与所述至少一个穿孔流体连通,使得所述涂层材料流过所述中空本体并在所述陶瓷纤维之一的至少一部分的位置处流出所述至少一个穿孔进入所述空隙中,
其中,所述涂层材料的流动导致所述陶瓷纤维之一的所述部分与所述框架分离,使得所述部分被均匀地涂覆有所述涂层材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/381,847 US20230028215A1 (en) | 2021-07-21 | 2021-07-21 | System and method for coating ceramic fiber |
US17/381,847 | 2021-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115677358A true CN115677358A (zh) | 2023-02-03 |
CN115677358B CN115677358B (zh) | 2024-04-05 |
Family
ID=82703033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210841343.5A Active CN115677358B (zh) | 2021-07-21 | 2022-07-18 | 用于涂覆陶瓷纤维的系统和方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230028215A1 (zh) |
EP (1) | EP4123050A1 (zh) |
JP (1) | JP7416470B2 (zh) |
CN (1) | CN115677358B (zh) |
CA (1) | CA3162330A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20240149491A1 (en) * | 2022-11-09 | 2024-05-09 | General Electric Company | Methods and apparatus for coating fibers |
US20240150899A1 (en) * | 2022-11-09 | 2024-05-09 | General Electric Company | Methods and apparatus for coating fibers |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1614086A (zh) * | 2003-11-07 | 2005-05-11 | 株式会社岛津制作所 | 表面波激发等离子体cvd系统 |
CN202323014U (zh) * | 2012-03-02 | 2012-07-11 | 烟台鲁航炭材料科技有限公司 | 一种气相沉积炉 |
CN104204315A (zh) * | 2012-01-20 | 2014-12-10 | 自由形态纤维有限公司 | 高强度陶瓷纤维及其制造方法 |
US20160229758A1 (en) * | 2015-02-11 | 2016-08-11 | United Technologies Corporation | Continuous chemical vapor deposition/infiltration coater |
CN105924198A (zh) * | 2015-02-26 | 2016-09-07 | 通用电气公司 | 陶瓷基质复合物制品和用于形成其的方法 |
US20170144925A1 (en) * | 2015-11-25 | 2017-05-25 | General Electric Company | Apparatus and methods for processing ceramic fiber |
CN106938937A (zh) * | 2015-11-25 | 2017-07-11 | 通用电气公司 | 处理陶瓷纤维的方法 |
CN107078014A (zh) * | 2014-10-14 | 2017-08-18 | 应用材料公司 | 评估等离子体处理装备中内表面调节的系统与方法 |
CN207581935U (zh) * | 2017-12-05 | 2018-07-06 | 南京工业大学 | 一种面向中空纤维膜批量改性的旋转原子层沉积反应器 |
US20190210932A1 (en) * | 2018-01-10 | 2019-07-11 | General Electric Company | Apparatus and methods for gripping flexible materials |
CN112981371A (zh) * | 2021-02-03 | 2021-06-18 | 上海大学绍兴研究院 | 一种化学气相沉积模具 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5015540A (en) | 1987-06-01 | 1991-05-14 | General Electric Company | Fiber-containing composite |
US5330854A (en) | 1987-09-24 | 1994-07-19 | General Electric Company | Filament-containing composite |
US5336350A (en) | 1989-10-31 | 1994-08-09 | General Electric Company | Process for making composite containing fibrous material |
US5628938A (en) | 1994-11-18 | 1997-05-13 | General Electric Company | Method of making a ceramic composite by infiltration of a ceramic preform |
US6024898A (en) | 1996-12-30 | 2000-02-15 | General Electric Company | Article and method for making complex shaped preform and silicon carbide composite by melt infiltration |
US6403158B1 (en) | 1999-03-05 | 2002-06-11 | General Electric Company | Porous body infiltrating method |
US6503441B2 (en) | 2001-05-30 | 2003-01-07 | General Electric Company | Method for producing melt-infiltrated ceramic composites using formed supports |
US20040067316A1 (en) | 2002-10-04 | 2004-04-08 | Paul Gray | Method for processing silicon-carbide materials using organic film formers |
JP2006527351A (ja) * | 2003-06-13 | 2006-11-30 | シュンク・コーレンストッフテヒニーク・ゲーエムベーハー | 部材の支持具及び支持具の製造方法 |
US20070099527A1 (en) * | 2005-11-01 | 2007-05-03 | General Electric Company | Method and reactor to coat fiber tows and article |
US20110171399A1 (en) * | 2010-01-08 | 2011-07-14 | General Electric Company | Process and apparatus for continuous coating of fibrous materials |
US11820716B2 (en) * | 2018-10-18 | 2023-11-21 | Rolls Royce North American Technologies Inc. | Method of fabricating cooling features on a ceramic matrix composite (CMC) component |
-
2021
- 2021-07-21 US US17/381,847 patent/US20230028215A1/en active Pending
-
2022
- 2022-05-31 EP EP22176493.9A patent/EP4123050A1/en active Pending
- 2022-06-09 CA CA3162330A patent/CA3162330A1/en active Pending
- 2022-07-18 CN CN202210841343.5A patent/CN115677358B/zh active Active
- 2022-07-20 JP JP2022115648A patent/JP7416470B2/ja active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1614086A (zh) * | 2003-11-07 | 2005-05-11 | 株式会社岛津制作所 | 表面波激发等离子体cvd系统 |
CN104204315A (zh) * | 2012-01-20 | 2014-12-10 | 自由形态纤维有限公司 | 高强度陶瓷纤维及其制造方法 |
CN202323014U (zh) * | 2012-03-02 | 2012-07-11 | 烟台鲁航炭材料科技有限公司 | 一种气相沉积炉 |
CN107078014A (zh) * | 2014-10-14 | 2017-08-18 | 应用材料公司 | 评估等离子体处理装备中内表面调节的系统与方法 |
US20160229758A1 (en) * | 2015-02-11 | 2016-08-11 | United Technologies Corporation | Continuous chemical vapor deposition/infiltration coater |
CN105924198A (zh) * | 2015-02-26 | 2016-09-07 | 通用电气公司 | 陶瓷基质复合物制品和用于形成其的方法 |
US20170144925A1 (en) * | 2015-11-25 | 2017-05-25 | General Electric Company | Apparatus and methods for processing ceramic fiber |
CN106938937A (zh) * | 2015-11-25 | 2017-07-11 | 通用电气公司 | 处理陶瓷纤维的方法 |
CN106957178A (zh) * | 2015-11-25 | 2017-07-18 | 通用电气公司 | 用于处理陶瓷纤维的设备及方法 |
CN207581935U (zh) * | 2017-12-05 | 2018-07-06 | 南京工业大学 | 一种面向中空纤维膜批量改性的旋转原子层沉积反应器 |
US20190210932A1 (en) * | 2018-01-10 | 2019-07-11 | General Electric Company | Apparatus and methods for gripping flexible materials |
CN112981371A (zh) * | 2021-02-03 | 2021-06-18 | 上海大学绍兴研究院 | 一种化学气相沉积模具 |
Also Published As
Publication number | Publication date |
---|---|
CN115677358B (zh) | 2024-04-05 |
CA3162330A1 (en) | 2023-01-21 |
EP4123050A1 (en) | 2023-01-25 |
US20230028215A1 (en) | 2023-01-26 |
JP2023016748A (ja) | 2023-02-02 |
JP7416470B2 (ja) | 2024-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106938937B (zh) | 处理陶瓷纤维的方法 | |
CN115677358B (zh) | 用于涂覆陶瓷纤维的系统和方法 | |
US10370292B2 (en) | Apparatus and methods for processing ceramic fiber | |
EP3061736B1 (en) | Ceramic matrix composite articles | |
EP1676822B1 (en) | SiC/SiC composites incorporating uncoated fibers to improve interlaminar strength | |
US20170348876A1 (en) | Thin ply high temperature composites | |
US20070099527A1 (en) | Method and reactor to coat fiber tows and article | |
EP1640352B1 (en) | Low cost manufacturing process for high performance ceramic matrix composites | |
US11236022B2 (en) | Filament winding apparatus and method for ceramic matrix composites | |
KR102153918B1 (ko) | 화학기상증착을 이용한 SiC 나노와이어 균일 성장에 의한 고밀도의 탄화규소 복합체 제조 방법 및 이의 의해 제조된 탄화규소 복합체 | |
CN113748096A (zh) | 制造cmc部件的方法 | |
US20240286964A1 (en) | Ceramic matrix composite component and method of forming | |
EP4119319B1 (en) | Method of fabric processing for improved cmc infiltration | |
EP4286127A1 (en) | A fibrous preform comprising a plurality of hourglass-shaped voids |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |