CN106938937A - 处理陶瓷纤维的方法 - Google Patents
处理陶瓷纤维的方法 Download PDFInfo
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- CN106938937A CN106938937A CN201611052691.5A CN201611052691A CN106938937A CN 106938937 A CN106938937 A CN 106938937A CN 201611052691 A CN201611052691 A CN 201611052691A CN 106938937 A CN106938937 A CN 106938937A
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- ceramic fibre
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- fibre
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本申请提供了用于处理陶瓷纤维用于制造陶瓷基质复合物(CMC)的方法及设备。一种方法可包括提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列。该方法还可包括以下中的至少一个:经由化学气相沉积(CVD)过程将涂层沉积在至少一个框架的陶瓷纤维上;以及以包括陶瓷基质前体成分的浆料浸渍陶瓷纤维来形成至少一个CMC预浸料坯。在一些实施例中,平面阵列的陶瓷纤维可包括涂层,并且该方法可包括以包括陶瓷基质前体成分的浆料浸渍涂覆的陶瓷纤维来形成至少一个CMC预浸料坯。
Description
技术领域
本公开大体上涉及用于处理陶瓷纤维的方法及设备。更具体而言,本公开涉及用于处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法及设备。
背景技术
陶瓷基质复合物(CMC)大体上包括嵌入在陶瓷基质材料中的陶瓷纤维增强材料。增强材料可为随机地分散在基质材料中的间断的短纤维,或定向在基质材料内的连续纤维或纤维束。增强材料在基质裂开的情况中用作CMC的承载组分。继而,陶瓷基质保护增强材料,保持其纤维的定向,并且用于将负载消散至增强材料。由于它们的高温能力,故硅基CMC如碳化硅(SiC)作为基质和/或增强材料在高温应用中已经变得特别令人感兴趣,如,用于在燃气涡轮(包括飞行器的燃气涡轮发动机和陆基燃气涡轮发动机)的构件中使用。SiC纤维还用作增强材料用于多种其它陶瓷基质材料(包括TiC、Si3N4和Al2O3)。
连续纤维增强的陶瓷复合物(CFCC)是特定类型的CMC,其提供轻质、高强度和高刚度用于多种高温承载应用,如,在护罩、燃烧器衬套、导叶(喷嘴)、叶片(轮叶)和燃气涡轮的其它高温构件中。由General Electric公司在名称HiPerComp®下开发的CFCC材料的著名实例包含SiC和元素硅或硅合金的基质中的连续SiC纤维。
各种技术可用于制造CMC,包括化学气相渗透(CVI)、湿鼓卷绕、层合、层叠、热解和熔渗(MI)。这些制造技术结合工具或模具使用以通过包括各种处理阶段处的热和化学过程的应用的过程来产生近净形制品。特别用于SiC/Si-SiC(纤维/基质)CFCC材料的此类过程的实例在美国专利No. 5,015,540, 5,330,854, 5,336,350, 5,628,938, 6,024,898, 6,258,737, 6,403,158和6,503,441和美国专利申请公开No. 2004/0067316中公开。
制造CMC的一个过程伴有使用CMC预浸料坯,其典型地为片状结构,包括浸渍有包含基质材料的前体和一种或更多种有机粘结剂的浆料的增强纤维。预浸料坯必须经历处理(例如,烧制)来将前体转化成期望的陶瓷基质材料。用于CFCC材料的预浸料坯经常包括二维纤维阵列,其包括浸渍有基质前体来产生大体上二维薄层的单层排列的丝束(独立丝的束)。所得的预浸料坯的多个板层接着堆叠并且压实以形成层叠预形件,过程称为"层合"。预浸料坯典型地但不一定布置成以便相邻预浸料坯的丝束定向成横向于(例如,垂直于)彼此,提供预形件的叠层平面中的较大强度(对应于最终CMC制品的主要(承载)方向)。作为实例,图1呈现了包括多个薄层12的CMC制品10的表面区域,各个薄层12为独立的预浸料坯带或片的结果。也如图1中所示,各个薄层12包含陶瓷增强物,其由陶瓷基质前体的转化(例如,在烧制之后)形成的陶瓷基质14中埋入(encase)的单向排列的纤维17构成。
如图2中所示,用于制作预浸料坯CMC预形件的一个过程包括卷绕技术来将纤维20(独立的丝或丝束)形成为单向预浸料坯带,其接着用于复合预形件的层合。如图2中所呈现,一些卷绕技术涉及涂覆纤维20。纤维20出于若干目的涂覆,如,在复合处理期间保护它们,修改纤维基质界面强度,和促进或防止纤维和基质的机械和/或化学粘结。开发了一定数量的不同技术用于将涂层施加于陶瓷纤维,如,蘸浆、溶胶凝胶、溅射和化学气相沉积(CVD)。在这些技术中,CVD可认作是在产生一致厚度和受控成分的不可渗透涂层方面最成功的。在典型的CVD过程中,纤维和反应物加热至升高的温度,其中涂层前体分解并且沉积为涂层。
连续纤维涂覆过程对于由卷绕技术处理的复合物而言是优选的。在连续涂覆过程中,如图2中所示,纤维20连续地穿过包含涂层前体24的CVD反应器22来形成涂覆的纤维26。也如图2中所示,连续纤维涂覆过程可涉及一次使单纤维丝束或丝20穿过CVD反应器22。涂覆可在低压下进行,并且纤维20可在低速下运送穿过反应器22,以确保涂覆的纤维26上的一致涂覆。此类CVD涂覆过程遭受在涂覆纤维丝束时的相当大量的断开的纤维和"松弛"纤维(即,"绒毛"),这降低过程的吞吐量或产量。尽管此类纤维涂覆过程可提供有效涂覆的纤维,但仍需要具有较高生产力的对CVD涂层纤维20的进一步改进。
如图2中所示,卷绕技术还可通过以基质前体27浸渍涂覆的纤维26来将涂覆的纤维26(丝或丝束)形成为单向预浸料坯带。如图2中所示,例如,用于浸渍涂覆的陶瓷纤维26的湿鼓卷绕过程可伴有将陶瓷纤维26拉过基质前体浆料混合物的浴27,该基质前体浆料混合物包括适合的基质前体材料、有机粘结剂和溶剂。所得的前体浸渍的纤维28接着围绕鼓29卷绕来形成平面的单向预浸料坯带。在接触鼓29之前,前体浸渍的纤维28典型地拉过孔口来控制获得的浆料的量。通过使鼓29(和/或浴27和孔口)转位,前体浸渍的纤维28以恒定间距(pitch)放置来产生连续的平面单向预浸料坯带。在以前体浸渍的纤维28卷绕之前,鼓29可以以释放片缠绕,以使所得的预浸料坯带可从鼓29更容易除去。当在鼓29上时,可通过允许溶剂蒸发来允许预浸料坯带空气干燥。作为备选,带可从鼓29切割,平放并且允许空气干燥。
由此类湿鼓卷绕过程产生的预浸料坯带可具有对应于鼓29上的纤维28的间距的表面粗糙度或波度。由于间距,故还可存在横跨带的纤维和基质的分布中的可变性。此外,由于纤维在卷绕过程期间处于张力下,故浸渍的纤维28可趋于下拉到鼓表面上,产生预浸料坯带,其具有在接触鼓29的带的表面处的成比例的更多纤维,以及在背对鼓29的带的表面处的成比例的更多基质前体。
此类湿鼓卷绕过程还可遭受在使用丝束时的相当大量的断开的纤维和松弛粘合的纤维20(即,"绒毛"),其可折断并且引起孔口的阻塞。结果,鼓卷绕操作可需要不断的操作者监督,以使此类阻塞可在它们发生时除去。
鼓卷绕过程的另一复杂可涉及需要在卷绕过程期间以浆料27完全浸渍(即,浸湿)纤维20,这需要纤维16花费足够量的时间浸没在浆料27中。可对于某些过程而言为大约五秒的该浸没时间可对纤维16可拉过浆料27浴的速度进行限制。结果,鼓卷绕100米的纤维20丝束所需的时间可相对冗长。
因此,用于涂覆和/或浸渍陶瓷纤维(以形成预浸料坯)用于以改进的产量或吞吐量产生CMC的备选方法和设备是合乎需要的。
发明内容
在一方面,本申请提供了一种用于处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法。该方法包括提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列。该方法还包括以下中的至少一个:经由化学气相沉积(CVD)过程将涂层沉积在至少一个框架的陶瓷纤维上;以及以包括陶瓷基质前体成分的浆料浸渍至少一个框架的陶瓷纤维来形成至少一个CMC预浸料坯。
在一些实施例中,该方法可包括经由化学气相沉积(CVD)过程将涂层沉积在至少一个框架的陶瓷纤维上。在一些此类实施例中,CVD过程可包括将至少一个框架定位在CVD反应器内,并且CVD过程可为批量CVD过程。在一些其它此类实施例中,涂层可包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
在一些实施例中,该方法可包括以包括陶瓷基质前体成分的浆料浸渍至少一个框架的陶瓷纤维来形成至少一个CMC预浸料坯。在一些此类实施例中,浸渍至少一个框架的陶瓷纤维可包括将基板联接于至少一个框架而至少部分地在其空腔内延伸,使得陶瓷纤维和陶瓷基质前体成分形成至少一个CMC预浸料坯带。在一些此类其它实施例中,浸渍陶瓷纤维可包括从至少一个框架的至少一部分除去陶瓷纤维,以及以浆料浸渍除去的陶瓷纤维。在一些其它此类实施例中,陶瓷纤维可包括涂层,其具有至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
在一些实施例中,该方法可包括以包括陶瓷基质前体成分的浆料浸渍至少一个框架的涂覆的陶瓷纤维来形成CMC预浸料坯。在一些实施例中,提供至少一个框架可包括将陶瓷纤维联接于至少一个框架。在一些实施例中,陶瓷纤维中的至少一条可包括陶瓷纤维丝束。在一些实施例中,陶瓷纤维中的至少一条可包括非成束的陶瓷丝。在一些实施例中,多条陶瓷纤维可包括延伸穿过空腔多次的至少一条连续陶瓷纤维的部分。在一些实施例中,陶瓷纤维中的至少一条可包括延伸穿过空腔一次的至少一条分立陶瓷纤维的一部分。在一些实施例中,陶瓷纤维可大致为SiC。
在另一方面,本公开提供了一种处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法。该方法包括提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列。该方法还包括以包括陶瓷基质前体成分的浆料浸渍至少一个框架的陶瓷纤维来形成至少一个CMC坯料。
在一些实施例中,浸渍至少一个框架的陶瓷纤维可包括将基板联接于至少一个框架而至少部分地在其空腔内延伸,使得陶瓷纤维和陶瓷基质前体成分形成至少一个CMC预浸料坯带。在一些实施例中,浸渍陶瓷纤维可包括从至少一个框架的至少一部分除去陶瓷纤维,以及以浆料浸渍除去的陶瓷纤维。在一些实施例中,陶瓷纤维可包括涂层,其具有至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。在一些此类实施例中,该方法还可包括经由化学气相沉积(CVD)过程将涂层沉积在至少一个框架的陶瓷纤维上。
技术方案1. 一种处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法,其包括:
提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列;以及
以下中的至少一个:
经由化学气相沉积(CVD)过程将涂层沉积在所述至少一个框架的所述陶瓷纤维上,以及
以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述陶瓷纤维来形成至少一个CMC预浸料坯。
技术方案2. 根据技术方案1所述的方法,其特征在于,所述方法包括经由化学气相沉积(CVD)过程将涂层沉积在所述至少一个框架的所述陶瓷纤维上。
技术方案3. 根据技术方案2所述的方法,其特征在于,所述CVD过程包括将所述至少一个框架定位在CVD反应器内,并且其中所述CVD过程为批量CVD过程。
技术方案4. 根据技术方案2所述的方法,其特征在于,所述涂层包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
技术方案5. 根据技术方案1所述的方法,其特征在于,所述方法包括以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述陶瓷纤维来形成至少一个CMC预浸料坯。
技术方案6. 根据技术方案5所述的方法,其特征在于,浸渍所述至少一个框架的所述陶瓷纤维包括将基板联接于所述至少一个框架而至少部分地在其所述空腔内延伸,使得所述陶瓷纤维和所述陶瓷基质前体成分形成至少一个CMC预浸料坯带。
技术方案7. 根据技术方案5所述的方法,其特征在于,浸渍所述陶瓷纤维包括从所述至少一个框架的至少一部分除去所述陶瓷纤维,以及以所述浆料浸渍所述除去的陶瓷纤维。
技术方案8. 根据技术方案5所述的方法,其特征在于,所述陶瓷纤维包括涂层,其包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
技术方案9. 根据技术方案2所述的方法,其特征在于,所述方法包括以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述涂覆的陶瓷纤维来形成CMC预浸料坯。
技术方案10. 根据技术方案1所述的方法,其特征在于,提供所述至少一个框架包括将所述陶瓷纤维联接于至少一个框架。
技术方案11. 根据技术方案1所述的方法,其特征在于,所述陶瓷纤维中的至少一条包括陶瓷纤维丝束。
技术方案12. 根据技术方案1所述的方法,其特征在于,所述陶瓷纤维中的至少一条包括非成束的陶瓷丝。
技术方案13. 根据技术方案1所述的方法,其特征在于,多条所述陶瓷纤维包括延伸穿过所述空腔多次的至少一条连续陶瓷纤维的部分。
技术方案14. 根据技术方案1所述的方法,其特征在于,所述陶瓷纤维中的至少一条包括延伸穿过所述空腔一次的至少一条分立陶瓷纤维的一部分。
技术方案15. 根据技术方案1所述的方法,其特征在于,所述陶瓷纤维大致为SiC。
技术方案16. 一种处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法,其包括:
提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列;以及
以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述陶瓷纤维来形成至少一个CMC预浸料坯。
技术方案17. 根据技术方案16所述的方法,其特征在于,浸渍所述至少一个框架的所述陶瓷纤维包括将基板联接于所述至少一个框架而至少部分地在其所述空腔内延伸,使得所述陶瓷纤维和所述陶瓷基质前体成分形成至少一个CMC预浸料坯带。
技术方案18. 根据技术方案16所述的方法,其特征在于,浸渍所述陶瓷纤维包括从所述至少一个框架的至少一部分除去所述陶瓷纤维,以及以所述浆料浸渍所述除去的陶瓷纤维。
技术方案19. 根据技术方案16所述的方法,其特征在于,所述陶瓷纤维包括涂层,其包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
技术方案20. 根据技术方案19所述的方法,其特征在于,所述方法还包括经由化学气相沉积(CVD)过程将所述涂层沉积在所述至少一个框架的所述陶瓷纤维上。
本公开的这些和其它的目的、特征和优点将从连同附图进行的本公开的各种方面的以下详细描述中变得显而易见。
附图说明
图1为陶瓷基质复合物(CMC)制品的一部分的截面视图;
图2示出了陶瓷纤维涂覆和陶瓷纤维浸渍过程;
图3为根据本公开的用于处理陶瓷纤维的设备的透视图;
图4为图3的设备的俯视图;
图5为图3的设备的截面视图;
图6为示出根据本公开的用于处理陶瓷纤维用于制造CMC制品的方法的流程图;
图7为在涂覆和浸渍过程之后的图3的设备的俯视图;以及
图8为图7的设备的截面视图。
具体实施方式
当介绍本发明的各种实施例的元件时,冠词“一”、“一个”、“该”和“所述”意图表示存在元件中的一个或更多个。用语“包括”、“包含”和“具有”意图是包含的,并且表示可存在除了列出的元件之外的附加元件。参数的任何实例并未排除公开实施例的其它参数。本文中关于任何特定实施例描述、示出或另外公开的构件、方面、特征、构造、布置、使用等可类似地应用于本文中公开的任何其它实施例。
图3-8示出了根据本公开的示例性陶瓷纤维处理设备32。设备32可便于或提供陶瓷纤维的处理用于制造陶瓷基质复合物(CMC)制品。例如,设备32可便于经由批量过程涂覆陶瓷纤维,和/或经由批量过程由涂覆的陶瓷纤维形成预浸料坯带(例如,渗透物)。作为备选,多个设备32可联接在一起,或者各个设备32可形成较大结构的部分或节段,该较大结构便于经由连续过程涂覆陶瓷纤维,和/或经由连续过程形成包括涂覆的陶瓷纤维的预浸料坯带。
如图3-5中所示,处理设备32可包括形成空腔50的框架40,以及延伸横跨空腔50的多条陶瓷纤维30。多条陶瓷纤维30中的各条可延伸横跨空腔50,并且定位在空腔50内(完全或部分地)或在空腔50附近。以该方式,空腔50可使陶瓷纤维30暴露。陶瓷纤维30可为独立的陶瓷丝或线、陶瓷纤维丝束的至少一部分,或独立丝或丝束的组合。将认识到的是,如本文中使用的"陶瓷纤维丝束"或简单地"丝束"是指多条独立陶瓷丝或松弛线的束。丝束的丝可随机地掺和或布置成图案,并且/或者可为连续的或非连续的。例如,丝束可包括断开的丝或丝节段。作为另一个实例,丝束的丝可大致平行,扭转或另外布置。丝束可大致以与单条或独立的丝相同的方式作用。还将认识到的是,如本文中使用的"独立的陶瓷丝"或简单地"独立的丝"是指单一或非成束的长形陶瓷部件。
陶瓷纤维30可均大致沿第一方向延伸横跨空腔50,如,从框架的第一部分42到第二部分44。以该方式,陶瓷纤维30可为单向的(例如,用于形成单向CMC预浸料坯带和/或单向CMC制品,如本领域中已知的)。陶瓷纤维30可在它们延伸横跨空腔50时包括相对较小的方向变化,但陶瓷纤维30可为单向的,使得它们大致沿第一方向延伸并且不彼此交叉。类似地,陶瓷纤维30可包括较小的方向变化,但陶瓷纤维30可为单向的,使得它们总体上大致沿第一方向且/或大致平行于彼此延伸。如果陶瓷纤维30包括至少一条丝束,则至少一条丝束总体上可为单向的(沿第一方向延伸),并且/或者构成丝束的陶瓷丝可为单向的。在一些其它实施例中,陶瓷纤维30的丝束的陶瓷丝可沿不同于第一方向的方向延伸(即,为非单向的,如,扭转或织造的丝),但丝束总体上可大致沿第一方向延伸,使得横跨空腔50的陶瓷纤维30是单向的。
如图3-5中所示,延伸横跨框架40的空腔50的单向陶瓷纤维30可形成平面阵列。例如,单向陶瓷纤维30可大致沿横跨空腔50的平面布置或定位。以该方式,处理设备32可包括延伸横跨框架40的空腔50的大致单向陶瓷纤维30的大致平面阵列。陶瓷纤维30的平面布置可包括相对较小的变化或异常,但陶瓷纤维30可总体上沿平面布置。例如,如下文进一步阐释的,陶瓷纤维30中的至少一条可包括多条独立的陶瓷丝,如,丝束(如图1中所示)。在一些此类实施例中,尽管独立的陶瓷丝可为平面外的(至少相对于彼此),但陶瓷纤维30总体上可大致布置在平面上,使得横跨空腔50的陶瓷纤维30总体上形成大致平面阵列(并且陶瓷纤维30可为单向的)。
如图3-5中所示,形成平面阵列的单向陶瓷纤维30可总体上与彼此间隔。陶瓷纤维30的间距可特别构造成使最大量的纤维30(例如,构成丝束的丝)的外表面暴露,以确保在其上形成涂层,如下文进一步阐释的。作为另一个实例,陶瓷纤维30的间距可特别考虑陶瓷纤维30的材料构造用于由其形成预浸料坯(如下文进一步阐释的),和/或最终由陶瓷纤维30形成的CMC的期望性能或应用,如下文进一步阐释的。本文中公开的框架40可在陶瓷纤维30的相对低的张力下提供有效且一致的陶瓷纤维30布置,这便于浸渍期间的最大涂层覆盖和/或纤维布置。然而,注意的是,陶瓷纤维30可包括布置中的一些较小变化(例如,丝断裂),这导致纤维30中的一些的不均匀间距和/或邻接或相交。然而,总体上,陶瓷纤维30可与彼此间隔。在一些实施例中,单向陶瓷纤维30(不论是丝束还是单条丝)总体上可遍及平面阵列大致均匀间隔,或者间距可变化。如果陶瓷纤维部分30为丝束,则框架30可构造成使得构成各条丝束的陶瓷丝与彼此间隔。在此类实施例中,相邻的丝束的间距(即,相似丝束的相邻陶瓷丝之间的间距)可间隔与丝束的独立丝的间距大约相同的距离。在一些实施例中,陶瓷纤维30可定位并且与彼此间隔,使得其丝的密度和布置遍及平面阵列的宽度和/或长度和/或厚度大致一致。
延伸横跨框架40的空腔50的单向陶瓷纤维30中的至少一条可为陶瓷纤维的一部分,该陶瓷纤维还包括定位在空腔50外的一个或更多个部分。作为备选,陶瓷纤维30中的至少一条可不是较长的陶瓷纤维的一部分,并且此类陶瓷纤维30可潜在地横跨空腔50被完全容纳。延伸横跨空腔50的单向陶瓷纤维30可由单独且不同的陶瓷纤维(丝束或丝)、一条或更多条连续纤维(丝束或丝)的部分,或单独且不同的陶瓷纤维和一条或更多条连续陶瓷纤维的部分的组合形成。例如,横跨或穿过空腔50经过的陶瓷纤维30中的至少一些可为连续陶瓷纤维的部分。以该方式,延伸横跨空腔50的陶瓷纤维30可为延伸横跨空腔50多次的至少一条连续陶瓷纤维的部分。延伸横跨空腔50的此类连续陶瓷纤维的各个程或部分可为平面阵列34的单向陶瓷纤维30中的一个。在一些此类实施例中,延伸横跨空腔50(并且形成平面阵列34的单向陶瓷纤维30)的连续陶瓷纤维的程或部分中的两个或更多个可为其毗邻部分。作为另一个实例,横跨空腔50并且形成平面阵列34的陶瓷纤维30中的至少一条可为独特或不同的陶瓷纤维的至少一部分。延伸横跨空腔50并且形成平面阵列34的单向陶瓷纤维30由此可包括横跨空腔50延伸或经过一次的至少一条分立的陶瓷纤维。以该方式,横跨空腔50延伸或经过并且形成平面阵列34的陶瓷纤维30中的两条可为两条单独且不同的陶瓷纤维的至少部分。
横跨框架40的空腔50的平面阵列34的单向陶瓷纤维30可为适合于制造CMC预浸料坯和最终CMC制品的任何陶瓷材料。例如,陶瓷纤维30可主要是碳(C)、碳化硅(SiC)、氧化铝(Al2O3)和/或多铝红柱石(Al2O3-SiO2)基纤维。除基本或主要材料(如例如,C、O、N、Ti、Zr、B)外,陶瓷纤维30可包含其它元素和/或杂质。在一些实施例中,设备32可对于涂覆氮化硅纤维(即,纯SiC纤维或主要SiC基的纤维)和/或以此类涂覆的碳化硅纤维形成预浸料坯而言特别有利。在此类实施例中,设备32可包括延伸横跨框架40的空腔50的单向碳化硅陶瓷纤维30的平面阵列34。
框架40可具有形成空间或空腔50并且支承横跨空腔50的单向陶瓷纤维30的平面阵列34的任何设计、构造或机构。空腔50可具有用于任何对应的尺寸或形状的平面阵列34的任何尺寸或形状。空腔50可为其中提供平面阵列34的无阻区域。在一些实施例中,框架40可构造成使得关于空腔(和由此还关于定位在其中的单向陶瓷纤维30的平面阵列34)的区域为敞开或无阻的。例如,框架40可构造成使得单向陶瓷纤维30的平面阵列34上方和/或下方的区域为无阻的,以允许陶瓷纤维30的不受阻碍涂覆。如图5中的截面视图中所示,单向纤维30的平面阵列34可定位在空腔50和/或框架40的厚度的中间部分中。在多个框架40沿厚度方向堆叠在彼此上时,平面阵列34在那里与彼此间隔,并且空腔50保持大致无阻。
框架40可经由任何机构支承或联接于横跨空腔50的单向陶瓷纤维30的平面阵列34。在一些实施例中,框架40可构造成联接于陶瓷纤维30的端部或端部部分,并且提供足够保持平面阵列34和陶瓷纤维30的单向方向的张力。在一些实施例中,框架40可包括张紧机构,其构造成调整陶瓷纤维30的张力。以该方式,在陶瓷纤维30联接于框架40之后,张紧机构可有效将张力施加于陶瓷纤维30来形成(和保持)陶瓷纤维30的单向平面阵列34构造。形成和/或保持平面阵列34和陶瓷纤维30的单向方向所需的张力可取决于例如特定纤维成分变化。
如上文提到的,框架40可具有用以形成空腔50的任何构造,并且可以以用以形成空腔50中的单向平面阵列34的任何方式与陶瓷纤维30联接。图3-5中示出了框架40的构造的一个实例。如图3和5中所示,框架30可包括上框架部分52和下框架部分54。上框架部分52和下框架部分54中的各个可包括第一纤维支承部件42和第二纤维支承部件44。如图3-5中所示,框架40的空腔50可在第一纤维支承部件42与第二纤维支承部件44之间延伸。也如图3-5中所示,框架40可包括在第一纤维支承部件42与第二纤维支承部件44之间延伸的第一间隔部件46和/或第二间隔部件48。框架40的空腔50还可在第一间隔部件46与第二间隔部件48之间延伸。第一纤维支承部件42和第二纤维支承部件44以及第一间隔部件46和第二间隔部件48可定向成关于彼此成直角,使得框架40(和潜在地,空腔50)为矩形或正方形形状。第一纤维支承部件42和第二纤维支承部件44可作用成刚性地附连和间隔第二纤维支承部件42,44。
陶瓷纤维30的端部部分可联接于第一纤维支承部件42和第二纤维支承部件44,使得单向平面阵列34在其间延伸横跨和/或穿过空腔50。例如,如图3和5中所示,陶瓷纤维30的端部部分可分别夹持或另外装固在框架50的上部分52的第一纤维支承部件42和第二纤维支承部件44与下部分54的第一纤维支承部件42和第二纤维支承部件44之间。以该方式,陶瓷纤维30的端部部分可分别定位在上部分52的第一纤维支承部件42和第二纤维支承部件44与下部分54的第一纤维支承部件42和第二纤维支承部件44之间,并且上部分52和下部分54可附连于彼此来将陶瓷纤维30装固于框架40。框架40的上部分52和下部分54可选择性地联接或附连于彼此,使得在处理单向纤维30的平面阵列34(如下文进一步阐释的)之后,上部分52和下部分54可选择性地分开,以从第一纤维支承部件42和第二纤维支承部件44之间释放陶瓷纤维30的端部部分。
在一些实施例中,图3-5中所示的框架40实例可由缠绕或卷绕技术形成。例如,一条或更多条陶瓷纤维可在一对重叠或堆叠的下部分54(或上部分52)的第一纤维支承部件42和第二纤维支承部件44之上缠绕或卷绕多次,以形成单向纤维30的两个平面阵列34。以该方式,一个平面阵列34可形成在成对的堆叠下部分54中的"顶部"下部分54的顶面附近,而另一个阵列34可形成在成对的堆叠下部分54中的"底部"下部分54的底面附近。对应的上部分52(或下部分54)可联接于堆叠的下部分54中的各个,以夹持或保持上部分52与下部分54之间的一条或更多条陶瓷纤维。由此可形成均包括单向纤维30的平面阵列34的两个堆叠的框架40。一旦包括夹持在其上部分52与下部分54之间的陶瓷纤维的堆叠框架40形成,则在框架40之间延伸的陶瓷纤维的任何部分可切割或修剪成使框架40分离。此类卷绕技术由此可形成一对框架40。
如上文所论述,图3-5中所示的示范性框架50仅为一个潜在的框架构造。例如,框架40可包括可手动接合的夹具或类似的紧固机构,其构造成将陶瓷纤维30的端部部分选择性地联接于框架40(和将其拆卸),而非将陶瓷纤维30的端部部分捕获在上部分52与下部分54之间。作为另一个实例,陶瓷纤维30的端部部分可粘附或胶合于框架40。在另一个实例中,框架40可包括一个或更多个钩、销、通道、孔口或任何其它类似的支柱结构,其构造成允许陶瓷纤维中的一条或更多条绕着其延伸或延伸穿过其至交叉点(crisscross),或以蛇线方式延伸横跨空腔50,并且形成单向陶瓷纤维30的平面阵列34。在此类实施例中,陶瓷纤维可沿第一方向延伸横跨空腔50第一程至框架40的第一部分(以形成第一陶瓷纤维部分30),绕着或穿过框架40的第一端部处的支柱机构延伸,并且沿第二方向向后延伸横跨空腔50第二程至框架40的第二部分(以形成第二陶瓷纤维部分30),该第二程与第一程间隔,该第二方向与第一方向相反。框架40的第二部分也可包括支柱机构,以类似地允许陶瓷纤维30改变方向,并且沿第一方向向后延伸横跨空腔50(以形成第三陶瓷纤维部分30)。框架40的一个或更多个(多个)支柱机构可构造成使横跨空腔50的陶瓷纤维的相邻程间隔,并且将横跨空腔50的陶瓷纤维的程布置成单向纤维30的平面阵列34。然而,如上文提到的,框架40可具有任何构造或设计,其形成空腔50并且提供横跨空腔50的单向纤维30的平面阵列34。
如图6的流程图中所示,图3-5的设备32可便于或提供处理联接于框架40的陶瓷纤维30用于制造CMC制品的方法110。例如,设备32可便于在过程110中涂覆陶瓷纤维30。如图6中所示,陶瓷纤维处理方法100可包括提供102多个框架40,其均包括延伸横跨其空腔50的单向陶瓷纤维30的平面阵列34。在一些实施例中,提供102多个框架40可包括将陶瓷纤维30联接于多个框架40,使得平面阵列34形成在其空腔50中。在一些其它实施例中,提供102多个框架40可包括获得包含框架40的多个预制设备32,其中平面阵列34形成在其空腔50中。
如图6中所示,陶瓷纤维处理方法100还可包括经由化学气相沉积(CVD)过程将至少一个涂层沉积104在多个框架40中的各个的平面阵列34的陶瓷纤维30上。例如,一个或更多个框架40可定位在CVD反应器内,并且在其中处理成将涂层沉积在平面阵列34的陶瓷纤维30上。CVD反应器可为有效将涂层沉积在陶瓷纤维30上的任何CVD反应器。在一些实施例中,多个框架40可定位有CVD反应器并且处理成将涂层沉积在陶瓷纤维30上。沉积104可执行为批量过程,如,通过将至少一个框架40定位在CVD反应器中,执行沉积,并且接着从CVD反应器除去至少一个框架40。作为另一个实例,沉积104可执行为连续过程,如通过使至少一个框架40连续地穿过CVD反应器。在此类连续过程中,多个框架40可联接于彼此,或者可为例如较大结构的部分,该较大结构连续地穿过反应器。
图7和8示出了在涂层36经由CVD过程104沉积在陶瓷纤维30上之后的陶瓷纤维30。如图8中所示,涂层36可完全覆盖或上覆平面阵列34的陶瓷纤维30的外表面。在一些实施例中,涂层36可为沉积在陶瓷纤维30上的单层材料。在其它实施例中,涂层36可包括沉积在陶瓷纤维30上的相同或不同材料的多层。
经由CVD过程104沉积在定位成横跨空腔50的平面阵列34的陶瓷纤维30上的涂层36可为用于处理陶瓷纤维用于制造CMC预浸料坯和/或制品的任何涂层材料。例如,涂层36可为对陶瓷纤维30的表面修改,其影响由陶瓷纤维30制成的所得的CMC制品的纤维基质界面。这可由适合的陶瓷材料的涂层36实现,涂层36阻止陶瓷纤维30与CMC制品的基质反应或粘结。陶瓷涂层36可允许陶瓷纤维30从基质拉出和/或沿基质滑动,因此增大了CMC制品的断裂韧性。然而,可使用提供附加和/或不同的(多个)功能和/或其它涂层类型(例如,非陶瓷)的涂层36。在一些实施例中,CVD涂覆过程104可将涂层36沉积在定位成横跨空腔50的平面阵列34的陶瓷纤维30上,包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、氮化硅、碳化硅或它们的组合。在一些此类实施例中,陶瓷纤维30可为SiC纤维。
如图6中所绘,陶瓷纤维处理方法100还可包括以包括陶瓷基质前体成分的浆料38浸渍106一个或更多个框架40的平面阵列34的涂覆的36条单向陶瓷纤维30来形成一个或更多个CMC预浸料坯60。浆料38可引入至框架40,使得浆料38绕着平面阵列34的涂覆的36条陶瓷纤维30中的各条延伸。平面阵列34的涂覆的36条陶瓷纤维30由此可包封或完全容纳在浆料38内。以该方式,浆料38和框架40(即,CVD涂覆之后的设备32)的涂覆的36条单向陶瓷纤维30的平面阵列34可形成CMC预浸料坯带60。在备选实施例中,陶瓷纤维处理方法100可包括从空腔50和/或框架40的至少一部分除去涂覆的36条单向陶瓷纤维30的平面阵列34,并且以浆料38浸渍106至少部分地除去的涂覆的36条陶瓷纤维30。以该方式,预浸料坯带60可形成在框架的空腔50外和/或在其与框架40分离之后形成。
设备32可便于以批量过程形成预浸料坯带60(具有涂覆的陶瓷纤维30),如,通过以浆料38浸渍106涂覆的36条单向陶瓷纤维30的多个平面阵列34作为一批,或者平面阵列34可一次浸渍106一个。作为另一个实例,浸渍106可执行为连续过程,如,通过使多个框架40连续地穿过浆料38浴或另外连续地浸渍106一系列或多个框架40。在此类连续过程中,多个框架40可联接于彼此,或者可为例如较大结构的部分,该较大结构经由浆料38浸渍机构或(多个)过程连续地浸渍106。
一旦涂覆的36条单向陶瓷纤维30的平面阵列34以浆料38浸渍,则所得的预浸料坯60可允许干燥/设置和/或另外处理成更容易处置的形式。此后,预浸料坯60可从框架50除去(如果预浸料坯60形成在框架50中)。例如,预浸料坯60可经由之前用于将预涂覆和/或预浸渍的陶瓷纤维30联接于框架50的相同机构与框架50解除联接。在一些实施例中,预浸料坯60可包括从包括涂覆和浸渍的陶瓷纤维30的部分延伸的未涂覆和/或未浸渍的陶瓷纤维30的部分。在此类实施例中,未涂覆和/或未浸渍的陶瓷纤维30可修剪或另外从预浸料坯60的涂覆和浸渍的陶瓷纤维30部分除去。
浆料38可包括有效形成CMC预浸料坯60和最终的CMC制品的任何陶瓷基质前体成分。例如,CMC预浸料坯60可用于通过熔渗(MI)过程、化学气相渗透(CVI)过程或任何其它(多个)过程来制造CMC制品。浆料38可为特别适合于SiC陶瓷纤维30的成分。在一些实施例中,浆料38可包括基于氧化物的陶瓷基质前体成分。在一些实施例中,浆料38可包括SiC,TiC, TiB, TiB2, ZrC, HfC, TaC, NbC, ZrSiC, TiSiC, C, Y2O3, ZrO2, Si3N4, A12O3,ZrO2, SiO2, TiO2中的至少一种和它们的组合。例如,陶瓷纤维30可为SiC纤维,并且浆料可为SiC陶瓷基质前体成分来由预浸料坯60形成SiC-SiC CMC制品。
图7和8还示出了在以浆料38浸渍106之后的涂覆的陶瓷纤维30。如图8的截面视图中所示,固体基板56可联接于框架40,使得空腔50的一侧被大致密封。在一些实施例中,基板56的至少内表面邻近陶瓷纤维30,并且此类内表面可为大致平面的。基板56的至少内表面可由此大致平行于陶瓷纤维30的平面阵列34延伸。框架40可构造成使得在厚度方向上的基板56上方的空腔50的区域也被大致密封。厚度方向可大致正交于平面阵列34延伸。框架40和基板56由此可包围空腔50的一部分,以形成能够将浆料38保持在其中的井或容置部。浆料38由此可引入到空腔50中,并且由框架40和基板56容纳在其中。作为另一个实例,基板56可与框架40对准或定位在框架40上方并且邻近平面阵列34,使得基板提供平面阵列34利用浆料38的流延成型(tape casting),以形成预浸料坯。基板56可另外构造成提供平面阵列34利用浆料38的流延成型,以形成预浸料坯带。
在一个实例中,如图8中所示,平面阵列34可在基板56上方但在厚度方向上在框架40的顶面下方间隔。由框架40和基板56形成的井由此可包含平面阵列34。足够的浆料38可引入到空腔50中,使得浆料38在陶瓷纤维30下方,在陶瓷纤维30之间和在陶瓷纤维30上方延伸。然而,如上文阐释的,井可或可不由基板56形成。由设备30形成的预浸料坯带60的厚度可部分地由基板56与陶瓷纤维30之间的空间和在陶瓷纤维30的顶部之上延伸的浆料38的量来控制。在一些实施例中,例如,如图8中所示,设备30可构造成使得陶瓷纤维30的平面阵列34在基板56上方和在框架40的顶面下方沿厚度方向均匀间隔。在此类实施例中,浆料38可引入到空腔50中并且大致填充空腔50。框架40的顶面可用作刀割或筛选基准来以等量的基质前体使预浸料坯60形成在陶瓷纤维30的平面阵列34上方和下方。在其它实施例中,陶瓷纤维30的平面阵列34可不在框架40的顶面下方间隔,并且/或者框架40的顶面可不用做刀割或筛选基准。
尽管一个示范性框架30实施例在图7和图8中示出用于以陶瓷基质前体浆料38浸渍106框架40的涂覆的36条单向陶瓷纤维30的平面阵列34,但可使用任何布置或构造,其有效以浆料38浸渍106平面阵列34。例如,如上文所论述,框架40的至少一部分可在浸渍106之前从涂覆的36条单向陶瓷纤维30的平面阵列34除去。作为另一个实例,第二背板可用于密封空腔50的敞开侧,并且背板中的至少一个可包括用于将浆料38引入到密封的空腔50中的端口。
实例
执行了本文中公开的处理陶瓷纤维的设备和方法的实例。如下文所论述,一对石墨框架部分构造有单向SiC纤维的大致平面的阵列。大致单向SiC纤维的平面阵列利用CVD过程涂覆,并且涂覆的SiC纤维以含SiC的浆料浸渍来产生预浸料坯带。
在外部大小中,框架部分为大约10英寸长,大约1.25英寸宽,以及大约0.0625英寸厚。框架部分形成大约8英寸长,1英寸宽度和0.0625英寸厚的空腔。两个框架利用销以堆叠关系紧固到一起,即,上框架部分和下框架部分堆叠成形成单个框架构造。近似15m的SiC纤维丝束的单个长度围绕框架构造卷绕,使得丝束形成沿空腔纵向地定向的两个大致单向的平面阵列。SiC丝束为近似13微米直径的近似500条丝的束。丝束的两个自由端部使用碳胶在框架部分的间隔部件上紧固于框架构造。
具有两个大致单向的平面阵列的框架构造设置在高温低压CVD反应器中作为批量过程,并且三个涂层按顺序沉积在邻近且横跨空腔的丝束的纤维上:氮化硼、硅掺杂的氮化硼和氮化硅。框架构造随后设置在高温常压CVD反应器中,并且热解碳涂层沉积在纤维上。
框架构造的两个框架部分在纤维的涂覆之后分离。在框架部分的支承部件之上经过的两个纤维阵列的区域紧固于支承部件,并且纤维在纤维围绕框架部分的长度端部卷绕的点处在框架部分的上侧和下侧处切割。各个分离的独立框架部分设置在金属块上,该金属块用作基板,并且限定关于涂覆的纤维阵列的空间用于渗透。聚脂薄膜片设置在金属块与涂覆的纤维阵列之间。包含SiC的浆料使用具有用以分送浆料的开口的储存器设置到框架部分中。浆料从框架部分的一个长度端部引入至另一个长度端部。浆料浸渍联接于框架部分的涂覆的纤维阵列。允许浆料干燥并且由此形成预浸料坯带。带最终从框架部分除去。
将理解的是,以上描述旨在为示范性而非限制性的。许多变化和修改可由本领域技术人员在本文中作出,而不脱离如由以下权利要求及其等同物限定的本发明的总体精神和范围。例如,上述实施例(和/或其方面)可与彼此组合使用。此外,可作出许多改型来使特定情形或材料适于各种实施例的教导,而不脱离它们的范围。尽管本文中所述的材料的大小和类型旨在限定各种实施例的参数,但它们决不是限制性的,并且仅为示例性的。本领域技术人员在审阅以上描述时许多其它实施例将显而易见。因此,各种实施例的范围应当参照所附权利要求连同此类权利要求所赋予的等同方案的完整范围确定。在所附权利要求中,用语"包括(including)"和"其中(in which)"用作相应用语"包括(comprising)"和"其中(wherein)"的通俗英文等同物。此外,在以下权利要求中,用语"第一"、"第二"和"第三"等仅用作标记,并且不旨在对它们的对象施加数字要求。另外,用语"可操作地连接"在本文中用于表示由直接或间接联接的单独的不同构件和集成地形成的构件(即,整体的)引起的两种连接。此外,以下权利要求的限制并未以器件加功能的格式撰写,并且不旨在基于35U.S.C. § 112的第六段解释,除非并且直到此类权利要求限制明确地使用短语"用于…的器件"后接没有又一个结构的功能的声明。将理解的是,上文所述的所有此类目的或优点不一定可根据任何特定实施例实现。因此,例如,本领域技术人员将认识到,本文中所述的系统和技术可以以一种方式实施或执行,使得实现或优化如本文中教导的一个优点或优点的组,而不必要地实现如可在本文中教导或建议的其它目的或优点。
虽然已经结合仅有限数量的实施例来详细描述本发明,但应当容易理解,本发明不限于此类公开的实施例。相反,可修改本发明,以并入迄今未描述但与本发明的精神和范围相称的任何数量的变型、更改、替换或等同布置。另外,虽然已经描述了本发明的多种实施例,但将理解,本公开的方面可包括所描述的实施例中的仅一些。因此,本发明不视为由前述描述限制,而是仅由所附权利要求的范围限制。
该书面的描述使用实例以公开本发明(包括最佳模式),并且还使本领域技术人员能够实践本发明(包括制造和使用任何装置或系统并且执行任何并入的方法)。本发明的可专利范围由权利要求限定,并且可包括本领域技术人员想到的其它实例。如果这些其它实例具有不与权利要求的字面语言不同的结构元件,或者如果这些其它实例包括与权利要求的字面语言无显著差别的等同结构元件,则这些其它实例意图在权利要求的范围内。
Claims (10)
1. 一种处理陶瓷纤维用于制造陶瓷基质复合物(CMC)制品的方法,其包括:
提供至少一个框架,其包括延伸横跨其空腔的单向陶瓷纤维的平面阵列;以及
以下中的至少一个:
经由化学气相沉积(CVD)过程将涂层沉积在所述至少一个框架的所述陶瓷纤维上,以及
以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述陶瓷纤维来形成至少一个CMC预浸料坯。
2.根据权利要求1所述的方法,其特征在于,所述方法包括经由化学气相沉积(CVD)过程将涂层沉积在所述至少一个框架的所述陶瓷纤维上。
3.根据权利要求2所述的方法,其特征在于,所述CVD过程包括将所述至少一个框架定位在CVD反应器内,并且其中所述CVD过程为批量CVD过程。
4.根据权利要求2所述的方法,其特征在于,所述涂层包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
5.根据权利要求1所述的方法,其特征在于,所述方法包括以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述陶瓷纤维来形成至少一个CMC预浸料坯。
6.根据权利要求5所述的方法,其特征在于,浸渍所述至少一个框架的所述陶瓷纤维包括将基板联接于所述至少一个框架而至少部分地在其所述空腔内延伸,使得所述陶瓷纤维和所述陶瓷基质前体成分形成至少一个CMC预浸料坯带。
7.根据权利要求5所述的方法,其特征在于,浸渍所述陶瓷纤维包括从所述至少一个框架的至少一部分除去所述陶瓷纤维,以及以所述浆料浸渍所述除去的陶瓷纤维。
8.根据权利要求5所述的方法,其特征在于,所述陶瓷纤维包括涂层,其包括至少一层,包括氮化硼、硅掺杂的氮化硼、碳、碳化硅或氮化硅。
9.根据权利要求2所述的方法,其特征在于,所述方法包括以包括陶瓷基质前体成分的浆料浸渍所述至少一个框架的所述涂覆的陶瓷纤维来形成CMC预浸料坯。
10.根据权利要求1所述的方法,其特征在于,提供所述至少一个框架包括将所述陶瓷纤维联接于至少一个框架。
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