CN115655984A - Semiconductor equipment and detection method for surface particles of component - Google Patents

Semiconductor equipment and detection method for surface particles of component Download PDF

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Publication number
CN115655984A
CN115655984A CN202211276342.7A CN202211276342A CN115655984A CN 115655984 A CN115655984 A CN 115655984A CN 202211276342 A CN202211276342 A CN 202211276342A CN 115655984 A CN115655984 A CN 115655984A
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China
Prior art keywords
filter membrane
particles
parts
semiconductor device
detecting particles
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Pending
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CN202211276342.7A
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Chinese (zh)
Inventor
邹冰杰
贺贤汉
侯晓晨
管方方
张正伟
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Shanghai Fullerde Intelligent Technology Development Co ltd
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Shanghai Fullerde Intelligent Technology Development Co ltd
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Priority to CN202211276342.7A priority Critical patent/CN115655984A/en
Publication of CN115655984A publication Critical patent/CN115655984A/en
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Abstract

The invention relates to a method for detecting particles on the surfaces of semiconductor equipment and parts, which comprises the following steps: placing parts of equipment on a fixed platform, washing the parts or one surface of the parts for 5-10 minutes by using IPA solution, collecting the washed liquid, and repeating the steps for multiple times; step two, absorbing 3-6ml of the flushed liquid by drip irrigation, and uniformly dripping the liquid on a filter membrane for suction filtration, wherein the filter membrane is made of hydrophilic PTFE polytetrafluoroethylene; step three, after the suction filtration is finished, the filter membrane is placed in a dust-free oven for drying; and step four, after the filter membrane is dried, testing the morphology and the components of the particles by adopting a scanning electron microscope and an X-ray energy spectrometer. The present invention performs detection by washing the parts with IPA and filtering them with a filter membrane, collecting the particles, and the like. The process is simple and convenient, and the particles on the filter membrane can be directly tested through the treatment of washing, filtering and drying. Digestion of the particles in the solution is not required.

Description

Semiconductor equipment and detection method for surface particles of component
Technical Field
The invention relates to the technical field of particle detection, in particular to a method for detecting particles on the surfaces of semiconductor equipment and components.
Background
With the development of the semiconductor integrated circuit industry, the line width is increasingly becoming finer and finer, and higher and more difficult requirements are put forward on the production process and technology in order to ensure the yield of products. The particles therein contaminate the product, so that the product loses its proper function and becomes a waste product. Therefore, effective particle contamination control is critical to yield improvement. During the production process, there are three main sources of particulate contamination: production environment, delivery, and production equipment. The main components, the shapes and the sizes of the particles of different pollution sources are different. At present, a liquid particle counter is mainly adopted for detecting particle sizes of particles in particle detection, components of the particles are mainly digested by acid and are tested by an ICPMS (intensive care system), and a visual, simple and convenient detection method for determining specific components, shapes and sizes of the particles is still sought.
Disclosure of Invention
In view of the problems in the prior art, the present invention provides a method for detecting particles on the surface of a semiconductor device and a component, which solves at least one of the above technical problems.
The technical scheme of the invention is as follows: a method for detecting particles on the surface of semiconductor equipment and components is characterized by comprising the following steps:
placing parts of equipment on a fixed platform, washing the parts or one surface of the parts for 5-10 minutes by using IPA solution, collecting the washed liquid, and repeating the steps for multiple times;
absorbing 36ml of the flushed liquid by drip irrigation, and uniformly dripping the liquid on a filter membrane for suction filtration, wherein the filter membrane is made of hydrophilic PTFE polytetrafluoroethylene;
step three, after the suction filtration is finished, placing the filter membrane into a dust-free oven for drying;
and step four, after the filter membrane is dried, testing the morphology and the components of the particles by adopting a scanning electron microscope and an X-ray energy spectrometer.
The parts are washed with IPA and filtered by a filter membrane, and particles are collected and detected. The process is simple and convenient, and the particles on the filter membrane can be directly tested through the treatment of washing, filtering and drying. The digestion treatment of particles in the solution is not needed; the success rate of one-time test is high, and certain repeatability is achieved; the composition, size and morphology of the individual particles present on the filter membrane can be tested in turn, facilitating the equipment or component manufacturer to find a source of contamination for the particles.
More preferably, the filter membrane is a circular filter membrane, the diameter of the filter membrane is 50mm, and the aperture of the filter pores on the filter membrane is between 0.2 and 0.68 μm. Other pore sizes may be selected for filtration as desired.
Further preferably, the filter membrane is a square filter membrane, and the side length of the filter membrane is 50mm.
More preferably, the aperture of the filtration pores on the filter membrane is 0.45 μm.
More preferably, the temperature in the dust-free oven is set to be 40-50 ℃ and the drying time is 10-20 minutes.
Further preferably, a vibration table is added to the bottom of the dust-free oven. Thereby increasing the upward and downward shaking and rotation of the filter membrane in the drying process to ensure the uniformity of drying.
Further preferably, the working distance of the scanning electron microscope is 6-11mm, and the voltage is 5-10kv.
Drawings
FIG. 1 is a graph showing the results of analysis according to an embodiment of the present invention;
FIG. 2 is a graph showing the results of an analysis according to an embodiment of the present invention;
FIG. 3 is a graph showing the results of an analysis according to an embodiment of the present invention;
FIG. 4 is a graph showing the results of analysis according to an embodiment of the present invention.
Detailed Description
The present invention will be further described with reference to the following examples.
Step one, IPA washing:
placing the parts of the equipment on a fixed platform, washing the parts or one surface of the parts for 5-10 minutes by using IPA solution, collecting the washed liquid, and repeating the steps for multiple times;
step two, filtering:
absorbing 3-6ml of the flushed liquid by drip irrigation, and uniformly dripping the liquid on a filter membrane for suction filtration, wherein the filter membrane is made of hydrophilic PTFE polytetrafluoroethylene (hydrophile), the diameter is 50mm, and the pore diameter is 0.45 mu m (other materials and pore diameters can be selected according to requirements);
step three, drying:
after the filtration, the filter membrane is placed in a dust-free oven for drying, the temperature is set to be 40-50 ℃, and the drying time is 10-20 minutes;
step four, testing:
and after the filter membrane is dried, testing the morphology and components of the particles by adopting a scanning electron microscope and an X-ray energy spectrometer. Wherein the working distance of the scanning electron microscope is 6-11mm, and the voltage is 5-10kv.
Example results the composition, size and surface topography of the part particles were detected and analyzed according to scanning electron microscopy and X-ray spectroscopy, as shown in fig. 1-4. In the examples, the particle size varies from 2 to 7 μm. In an energy spectrum, elements C, 0 and F are derived from a polytetrafluoroethylene filter membrane, and elements A1, mo, W and the like are derived from the surface of equipment or a part.
Although the present invention has been described in detail with reference to the above embodiments, it should be understood that the invention is not limited to the embodiments, and that various equivalent changes and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and the equivalents thereof are intended to be included in the scope of the claims.

Claims (7)

1. A method for detecting particles on the surfaces of semiconductor equipment and components is characterized by comprising the following steps:
placing parts of equipment on a fixed platform, washing the parts or one surface of the parts for 5-10 minutes by using IPA solution, collecting the washed liquid, and repeating the steps for multiple times;
absorbing 3-6ml of the flushed liquid by drip irrigation, and uniformly dripping the flushed liquid on a filter membrane for suction filtration, wherein the filter membrane is made of hydrophilic PTFE polytetrafluoroethylene;
step three, after the suction filtration is finished, placing the filter membrane into a dust-free oven for drying;
and step four, after the filter membrane is dried, testing the morphology and the components of the particles by adopting a scanning electron microscope and an X-ray energy spectrometer.
2. The method of claim 1, wherein the step of detecting particles on the surface of the semiconductor device or component comprises the steps of: the filter membrane is a circular filter membrane, the diameter of the filter membrane is 50mm, and the aperture of the filter pores on the filter membrane is between 0.2 and 0.68 mu m.
3. The method of claim 1, wherein the step of detecting particles on the surface of the semiconductor device or component comprises: the filter membrane is a square filter membrane, and the side length of the filter membrane is 50mm.
4. The method of claim 2, wherein the step of detecting particles on the surface of the semiconductor device or component comprises the steps of: the aperture of the filter hole on the filter membrane is 0.45 μm.
5. The method of claim 1, wherein the step of detecting particles on the surface of the semiconductor device or component comprises: the temperature in the dust-free oven is set to be 40-50 ℃, and the drying time is 10-20 minutes.
6. The method of claim 5, wherein the step of detecting particles on the surface of the semiconductor device or component comprises: a vibration table is additionally arranged at the bottom of the dust-free oven.
7. The method of claim 1, wherein the step of detecting particles on the surface of the semiconductor device or component comprises: the working distance of the scanning electron microscope is 6-11mm, and the voltage is 5-10kv.
CN202211276342.7A 2022-10-18 2022-10-18 Semiconductor equipment and detection method for surface particles of component Pending CN115655984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211276342.7A CN115655984A (en) 2022-10-18 2022-10-18 Semiconductor equipment and detection method for surface particles of component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211276342.7A CN115655984A (en) 2022-10-18 2022-10-18 Semiconductor equipment and detection method for surface particles of component

Publications (1)

Publication Number Publication Date
CN115655984A true CN115655984A (en) 2023-01-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211276342.7A Pending CN115655984A (en) 2022-10-18 2022-10-18 Semiconductor equipment and detection method for surface particles of component

Country Status (1)

Country Link
CN (1) CN115655984A (en)

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