CN115655505A - Quartz tuning fork temperature sensor with distortion model - Google Patents

Quartz tuning fork temperature sensor with distortion model Download PDF

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CN115655505A
CN115655505A CN202211702025.7A CN202211702025A CN115655505A CN 115655505 A CN115655505 A CN 115655505A CN 202211702025 A CN202211702025 A CN 202211702025A CN 115655505 A CN115655505 A CN 115655505A
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excitation electrode
quartz
base region
tuning fork
electrode
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CN115655505B (en
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李艳臣
霍东霄
初思搏
林金秋
周佳辉
林江
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Changzhou Qijunyuan Sensor Technology Co ltd
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Changzhou Qijunyuan Sensor Technology Co ltd
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Abstract

The invention relates to the technical field of quartz temperature sensors, in particular to a twisted mode quartz tuning fork temperature sensor which comprises a horizontal type shell and a twisted mode quartz tuning fork thermosensitive resonator arranged in the horizontal type shell, wherein the twisted mode quartz tuning fork thermosensitive resonator is a four-open-two-closed end twisted mode quartz tuning fork thermosensitive resonator with a T-shaped supporting and mounting structure and comprises a thermosensitive resonator main body and a quartz short column vertically connected with the gravity center position of the thermosensitive resonator main body, the thermosensitive resonator main body comprises a common base region and a plurality of quartz fork arms extending out of the common base region, excitation electrode groups are arranged on the peripheral surfaces of the quartz fork arms, and the excitation electrode groups are electrically connected with a first pin and a second pin on the horizontal type shell correspondingly. The invention provides a quartz tuning fork temperature sensor with a torsional mode, which solves the problem that the sensor cannot achieve both low working frequency, high resolution, acceleration resistance, strong mechanical vibration impact resistance, high accuracy and excellent long-term stability in the industry.

Description

Quartz tuning fork temperature sensor with distortion model
Technical Field
The invention relates to the technical field of quartz temperature sensors, in particular to a quartz tuning fork temperature sensor with a torsional mode.
Background
The resonant quartz temperature sensor is a novel digital sensor known for its excellent characteristics of high accuracy, high stability, ultra-high resolution, etc. At present, resonant quartz temperature sensors are roughly classified into two types:
1. a high-frequency resonant quartz temperature sensor using thickness shear mode, for example, chinese patent No. CN100554900C, CN100555840C, CN1162691C, one of the present inventors.
2. The resonant quartz tuning fork temperature sensor has two modes: flexural and torsional vibration mode quartz tuning fork temperature sensors, such as the one of the present inventors 'Chinese patent CN111238676B, CN201314848Y and Lin Jiang, fan Ja-ling, zhang bin-hua et al, low-cost high-performance quartz tuning-for-temperature Sensor [ C ] ICECM-ICSA'95 processing of International Conference on Electronic components, sensors and actuators,1995, 326-328, and He Jin, chen Zhao-yan, lin Jiang et al, A new Low-cost high-performance tuning-for-temperature Sensor [ J ] Sensor No. 2003, VOL.23.2, 134, 142, which are flexural vibration mode quartz temperature sensors, are bending mode quartz tuning sensors.
The advantages and disadvantages of these two major quartz temperature sensors are as follows:
1. the thickness shear vibration mode has the highest resolution, the best long-term stability and the best accuracy, but the working frequency is too high (10 to 28MHz), in order to ensure stable oscillation, an oscillation circuit of the thickness shear vibration mode needs to be close to a quartz sensitive element, and the distance between a quartz heat-sensitive resonator and a peripheral circuit cannot be more than 500mm. Although the quartz thermosensitive resonator has strong nuclear radiation resistant working capacity, a silicon semiconductor IC in the quartz temperature sensor assembly is a short plate in the aspects of nuclear radiation resistance and high temperature resistance. The simplest method is to place the quartz thermal resonator in the region of high nuclear radiation intensity and the peripheral circuit composed of silicon semiconductor IC in the low nuclear radiation, normal temperature region. Therefore, the integral nuclear radiation resistance and high-temperature resistance working capacity of the resonant quartz temperature sensor component is improved. It is clear that thickness shear mode quartz temperature sensors, in which the maximum distance of the quartz thermal resonator from the mating peripheral circuitry cannot be greater than 500mm, lack certain competitiveness.
2. The thickness shear mode has high working frequency, so that the cost is high, the power consumption is large, generally several mW to tens mW, the size is large, and the response speed is low. Obviously, the device is not suitable for some pocket instruments requiring low power consumption and aerospace, aviation and navigation devices such as satellites, unmanned planes, submarines and the like.
3. The higher the operating frequency, the more difficult it is generally to improve its Electromagnetic Compatibility (EMC); especially, when the signals of the multi-channel frequency sensor are transmitted near a large flow, the high-frequency pulling phenomenon is more serious.
4. Most quartz tuning fork temperature sensors work in a bending vibration mode or a twisting vibration mode, and the frequency is low, and is usually 32kHz to 250kHz. The distance between the quartz thermosensitive resonator and a peripheral circuit can be larger, usually can reach 3 to 10m, the power consumption is small, however, compared with a thickness shear vibration mode, the working frequency of the existing tuning fork type quartz temperature sensor is somewhat too low, particularly in a bending vibration mode; their Q-value (quality factor) is also not too high, and therefore their resolution, accuracy and long-term stability are not comparable to the thickness shear vibration mode. The external dimensions of the bending vibration mode quartz tuning fork temperature sensor and the twisting vibration mode quartz tuning fork temperature sensor are approximately the same, and are generally phi 2mm and phi 3 mm. The difference is that the resonant frequency of the former is 32 to 40KHz, the resonant frequency of the latter is 172 to 250KHz, but the first order temperature coefficient of the former (usually 40 to 80 × 10) -6 /° C) much higher than the latter (typically 30 to 46. Multidot.10) -6 /° c). In addition, the second order temperature coefficient of the frequency-temperature characteristic curve of the latter can be equal to zero, and the third order temperature coefficient can be close to zero, in other words, the frequency-temperature characteristic of the latter has good linearity, while the former has high sensitivity, and the two are all thousands of autumn.
In addition, it is worth emphasizing that the temperature sensor of the twisted vibration mode quartz tuning fork not only has higher temperature accuracy and good stability, but also does not need to utilize external circuit software and hardware to carry out linear compensation, thereby greatly reducing the volume and the weight of the temperature measurement system, improving the reliability and reducing the debugging and production cost. It is more attractive that the frequency-temperature characteristic of the torsional vibration mode is not affected by acceleration. It is clear that if the latter is integrated in an acceleration test system, the temperature measurement data it provides is used in temperature compensation of acceleration sensors, pressure sensors, etc., with a rather high degree of confidence. Therefore, the distorted vibration mode quartz tuning fork temperature sensor is very suitable for being used in devices such as spaceflight, aviation, nuclear submarines, military unmanned planes, missiles, torpedoes and the like.
Unfortunately, the current twisted vibrating mode quartz tuning fork temperature sensors still suffer from the following disadvantages:
1. each prong of the tuning fork thermal-sensitive resonator carries out torsional vibration around a central axis of the prong which is parallel but not collinear, so that a part of the vibration energy is inevitably transmitted to the base region and the base seat of the tuning fork thermal-sensitive resonator by using an anti-symmetric bending moment pair. According to the traditional twisted vibration mode quartz tuning fork temperature sensor, the size of a base region is increased, leaked twisted vibration energy is passively lost by means of damping of a medium in the base region and natural attenuation generated by internal friction, an active energy trap measure is not adopted, and the Q value (quality factor) is improved. Obviously, the Q value has larger lifting space.
2. In addition, the vibration energy transferred to the tuning fork base region and the base seat can also be transferred to other adjacent sensors or devices through the frame of the thermosensitive resonator, so that the work of the adjacent sensors or devices is interfered, and the stability of the torsional vibration mode quartz tuning fork sensor per se is deteriorated, and the time drift error is increased.
3. The induced bending deformation can obviously weaken the combination firmness of the quartz tuning fork thermosensitive resonator and the sensor frame. The method not only influences the stability of the resonant frequency of the quartz thermosensitive tuning fork, increases the equivalent series resistance, but also influences the bonding degree of the base region and the base seat of the quartz thermosensitive tuning fork, and seriously influences the continuity of temperature measurement. In other words, the technical specifications of the conventional twisted vibration mode quartz tuning fork temperature sensor are still to be improved.
4. The thickness of a quartz tuning fork thermosensitive resonator of a traditional torsional vibration mode quartz tuning fork temperature sensor is usually 0.05-0.15mm, the width of a fork arm is 0.1-0.3mm, and torsional vibration of the fork arm often causes the surface of the fork arm to present a 'warping shape', and in addition, a thermosensitive cut quartz crystal of the quartz tuning fork temperature sensor often comprises a cleavage plane of the crystal, so the mechanical strength of the torsional vibration mode quartz tuning fork sensor is usually very weak. It is clearly pale in comparison with the flexural vibration mode in its resistance to strong mechanical vibration shocks.
5. The traditional twisted vibration mode quartz tuning fork temperature sensor is of a vertical packaging structure with phi 2x 6mm or phi 3 x 8mm in appearance, and is often vertically installed on a temperature measured body for measuring temperature, so that a slender quartz tuning fork thermosensitive resonator inside the temperature measured body is also in a vertical state with the surface of the temperature measured body, and the installation mode has poor strong mechanical vibration impact resistance. Particularly, the length of the base region of the traditional quartz tuning fork thermal sensitive resonator is about 45% of the total length of the tuning fork, and the base region is frosted on snow. The method not only increases the response time, but also reduces the mechanical vibration and impact resistance, and severely limits the application range of aerospace, aviation and nuclear submarines. Therefore, the traditional quartz tuning fork thermosensitive resonator is not suitable for being used as a sensitive element for temperature compensation of acceleration sensors and pressure sensors of aerospace, aviation, unmanned aerial vehicles and submarines.
6. The traditional twisted vibration mode quartz tuning fork temperature sensor is limited by the length/width dimension ratio of the fork arms and the process precision, and the temperature sensitivity and the linearity of the temperature characteristic of the sensor need to be improved.
7. The excitation electrode of the traditional twisted vibration mode quartz tuning fork temperature sensor mostly adopts a chromium-silver or chromium-gold double-layer film material, and the mutual diffusion of the chromium-silver or chromium-gold double-layer film material is accelerated due to repeated circulation of the measured temperature in the temperature measuring process, and the thermal stress generated due to the mismatch of the thermal expansion coefficients of the chromium-silver or chromium-gold and the quartz material brings about not only temperature drift but also time drift and influences the long-term stability of the temperature measuring sensor.
In short, the existing torsional vibration mode quartz tuning fork temperature sensor has some unsatisfactory characteristics in terms of accuracy, linearity, stability, strong mechanical vibration/impact resistance and the like, and a highly stable resonant torsional vibration mode quartz temperature sensor which is high in response speed, excellent in accuracy, small in temperature drift, resistant to nuclear radiation and magnetic field, insensitive to acceleration and strong mechanical vibration/impact is urgently needed.
Disclosure of Invention
The invention provides a distortion mode quartz tuning fork temperature sensor, which aims to solve the technical problems that the distortion vibration mode quartz tuning fork temperature sensor in the prior art is weak in strong mechanical vibration resistance and impact resistance and the linearity of temperature sensitivity and frequency temperature characteristics needs to be improved.
The technical scheme of the invention is as follows:
a twisted mode quartz tuning fork temperature sensor, comprising:
the quartz tuning fork heat-sensitive resonator comprises a horizontal shell, wherein a torsional mode quartz tuning fork heat-sensitive resonator is arranged in the horizontal shell, and a first pin and a second pin which extend out of the horizontal shell are further arranged at the bottom of the horizontal shell;
the system comprises a torsional mode quartz tuning fork thermosensitive resonator, a piezoelectric ceramic material and a piezoelectric ceramic material, wherein the torsional mode quartz tuning fork thermosensitive resonator comprises a thermosensitive resonator main body and a quartz short column vertically connected with the gravity center position of the thermosensitive resonator main body; the heat-sensitive resonator body comprises a common base region and a plurality of quartz forked arms which extend out of the common base region and are perpendicular to the quartz short columns, excitation electrode groups are arranged on the peripheral surfaces of the quartz forked arms, first surface electrodes and second surface electrodes are arranged on the quartz short columns, and the excitation electrode groups are electrically connected with the first pins and the second pins on the horizontal shell correspondingly through the first surface electrodes and the second surface electrodes.
Further, the air conditioner is provided with a fan,
the horizontal shell comprises a pipe cap and a pipe seat, wherein the pipe cap and the pipe seat are both made of kovar alloy materials of which the inner surfaces and the outer surfaces are sputtered with tungsten copper layers, a first glass powder insulator and a second glass powder insulator are arranged on the pipe seat in a sealing mode, the first pipe pin penetrates through the first glass powder insulator in an airtight mode to form an integral structure, the second pipe pin penetrates through the second glass powder insulator in an airtight mode to form an integral structure, the first pipe pin and the second pipe pin are made of kovar alloy materials plated with nickel, and the pipe cap and the pipe seat are welded into a whole through energy storage welding or laser welding in a nitrogen atmosphere or a helium atmosphere to form an airtight packaging structure;
the horizontal shell is filled with heat conducting gas, the heat conducting gas is helium or nitrogen, and the content of the heat conducting gas is 0.5-1.3kPa by pressure;
the surfaces of the pipe cap, the pipe seat, the first pin and the second pin are also electroplated with an absorption stress layer, and the surface of the absorption stress layer is electroplated with a nickel metal layer; the absorbing stress layer is a copper layer or a silver layer, the thickness of the absorbing stress layer is 15 to 30 micrometers, and the thickness of the nickel metal layer is 0.8 to 10 micrometers.
Further, the air conditioner is provided with a fan,
a through hole matched with the quartz short column is formed in the gravity center position of the common base region of the thermosensitive resonator main body, and a solid solution made of graphene carbon fiber-mullite ceramic powder-low-temperature glass powder is arranged between the inner wall of the through hole and the quartz short column;
the cross section of the quartz short column is rectangular, the long side direction of the rectangle is consistent with the mechanical axis direction of the quartz crystal, the short side direction of the rectangle is consistent with the optical axis direction of the quartz crystal, and the normal direction of the cross section is consistent with the electric axis direction of the quartz crystal;
the through hole is a rectangular through hole, the thermal sensitive resonator body is consistent with the mechanical axis direction of the quartz crystal along the long side direction of the rectangular through hole, is consistent with the optical axis direction of the quartz crystal along the short side direction of the rectangular through hole, and is consistent with the electric axis direction of the quartz crystal along the depth direction of the rectangular through hole;
the first surface electrode and the second surface electrode are respectively formed on two side faces with the largest surface area of the quartz short column, one ends of the first surface electrode and the second surface electrode are respectively and electrically connected with the corresponding excitation electrode groups, the other ends of the first surface electrode and the second surface electrode are respectively and correspondingly connected and fixed with the first pin and the second pin by a welding method or a high-temperature conductive adhesive coating method, and the distance d between the lower surface of the quartz short column and the inner bottom surface of the tube seat is larger than or equal to 0.5mm.
Further, the air conditioner is provided with a fan,
the thermosensitive resonator body comprises eight first sub-fork arms and four second sub-fork arms, wherein the eight first sub-fork arms are respectively a first fork arm, a second fork arm, a third fork arm, a fourth fork arm, a fifth fork arm, a sixth fork arm, a seventh fork arm and an eighth fork arm, the four second sub-fork arms are respectively a first cross arm, a second cross arm, a third cross arm and a fourth cross arm, and the four second sub-fork arms are respectively a first cross arm, a second cross arm, a third cross arm and a fourth cross arm,
the first fork arm and the third fork arm extend out from the common base to one side along the optical axis direction of the quartz crystal, and the fifth fork arm and the seventh fork arm extend out from the common base to the other side along the optical axis direction of the quartz crystal;
the first fork arm and the second fork arm are connected into a whole through a first cross arm to form a V-21274, the first combined fork arm is formed, the third fork arm and the fourth fork arm are connected into a whole through a second cross arm to form a V-21274, the second combined fork arm is formed, and the first combined fork arm and the second combined fork arm are arranged in axial symmetry relative to the transverse center line of the common base region; the fifth fork arm and the sixth fork arm are connected into a whole through a third cross arm to form a third combined fork arm, and are arranged in axial symmetry with the first combined fork arm about the longitudinal center line of the common base region;
the first combined fork arm, the second combined fork arm, the third combined fork arm and the fourth combined fork arm are all fork arms with one fixed end and the other free vibration form;
the torsional mode vibration of the first combined yoke and the torsional mode vibration of the fourth combined yoke are in phase; the torsional mode vibration of the second combined yoke and the torsional mode vibration of the third combined yoke are in the same phase; the torsional mode vibration of the first combined yoke and the torsional mode vibration of the second combined yoke are out of phase; the torsional mode vibration of the third combined yoke is out of phase with the torsional mode vibration of the fourth combined yoke.
Further, the air conditioner is provided with a fan,
two grooves which are sunken towards the inside of the public base region are respectively formed on the edges of two sides of the public base region in the mechanical axis direction and are respectively a first groove, a second groove, a third groove and a fourth groove, the first groove and the third groove, the second groove and the fourth groove are respectively arranged in axial symmetry about the transverse central line of the public base region, and the first groove and the second groove, the third groove and the fourth groove are respectively arranged in axial symmetry about the longitudinal central line of the public base region.
Further, the air conditioner is provided with a fan,
the width direction of the rectangular through hole of the public base region is consistent with the length direction of the public base region, the length direction of the rectangular through hole of the public base region is consistent with the width direction of the public base region, and the vertical distance L1 between the symmetrical center line of the rectangular through hole of the public base region in the width direction and the symmetrical center line of the public base region in the length direction, namely the longitudinal center line, is not more than 0.7L, wherein L is half of the length of the public base region; the vertical distance L2 between the longitudinal positioning center lines of the first groove and the third groove and between the longitudinal positioning center lines of the second groove and the fourth groove and the longitudinal center line, which is the symmetric center line in the length direction of the public base region, is less than or equal to 0.6L, wherein L is half of the length of the public base region.
Further, the air conditioner is provided with a fan,
the first groove, the second groove, the third groove and the fourth groove are all of non-permeable structures, namely a residual wafer is further formed in each groove, the residual wafers are parallel to the upper surface and the lower surface of the public base region, the depth of each residual wafer from the upper surface and the depth of each residual wafer from the lower surface of the public base region are respectively 0.25 to 0.33D, the thickness of each residual wafer is 0.34 to 0.5D, and D is the thickness of the public base region.
Further, the air conditioner is provided with a fan,
the excitation electrode group comprises a first excitation electrode group and a second excitation electrode group, wherein,
the first excitation electrode group comprises a first excitation electrode, a second excitation electrode, a fifth excitation electrode, a sixth excitation electrode, a ninth excitation electrode, a tenth excitation electrode, a thirteenth excitation electrode and a fourteenth excitation electrode which are sequentially arranged on the upper surfaces of the fourth prong, the third prong, the first prong and the second prong, and a third excitation electrode, a fourth excitation electrode, a seventh excitation electrode, an eighth excitation electrode, an eleventh excitation electrode, a twelfth excitation electrode, a fifteenth excitation electrode and a sixteenth excitation electrode which are arranged on the lower surface;
the second excitation electrode group comprises a first second excitation electrode, a second excitation electrode, a fifth second excitation electrode, a sixth second excitation electrode, a ninth second excitation electrode, a tenth second excitation electrode, a thirteenth second excitation electrode and a fourteenth second excitation electrode which are sequentially arranged on the upper surfaces of the eighth prong, the seventh prong, the fifth prong and the sixth prong, and a third second excitation electrode, a fourth second excitation electrode, a seventh second excitation electrode, an eighth second excitation electrode, an eleventh second excitation electrode, a twelfth second excitation electrode, a fifteenth second excitation electrode and a sixteenth second excitation electrode which are arranged on the lower surface;
the first excitation electrode II, the first excitation electrode V, the first excitation electrode Ten, the first excitation electrode thirteen, the first excitation electrode III, the first excitation electrode eighth, the first excitation electrode eleventh and the first excitation electrode sixteen are in the same phase and are connected with the first connecting terminal; the first excitation electrode I, the first excitation electrode VI, the first excitation electrode nine, the first excitation electrode fourteen, the first excitation electrode IV, the first excitation electrode seven, the first excitation electrode twelve and the first excitation electrode fifteen are in the same phase, and are connected with the second connecting terminal;
the second excitation electrode II, the second excitation electrode V, the second excitation electrode Ten, the second excitation electrode thirteen, the second excitation electrode III, the second excitation electrode eighth, the second excitation electrode eleventh and the second excitation electrode sixteen are in the same phase and are connected with the second connecting terminal; the first second excitation electrode, the sixth second excitation electrode, the ninth second excitation electrode, the fourteenth second excitation electrode, the fourth second excitation electrode, the seventh second excitation electrode, the twelfth second excitation electrode and the fifteen second excitation electrode are in the same phase and are connected with the first connecting terminal.
Further, the air conditioner is provided with a fan,
each excitation electrode of the excitation electrode group, the first surface electrode on the quartz short column and the second surface electrode are all four-layer gold film electrodes manufactured by a sputtering process, wherein,
the first layer is a strong adhesion layer, is positioned on the surface of a corresponding quartz crystal, is composed of a chromium-nickel alloy film, and has the thickness of 5 to 15nm;
the second layer is a stress absorption layer, is positioned on the strong-adhesion layer, is made of soft metal silver or copper, and has the thickness of 100 to 300nm;
the third layer is a diffusion stopping layer, is positioned on the stress absorption layer, is made of tantalum or hafnium metal, and has the thickness of 10 to 50nm;
the fourth layer is a conductive and lead bonding layer, is positioned on the diffusion barrier layer, is composed of an alloy film of silver-gold-rare earth element samarium, and is 150 to 800nm in thickness, wherein the content (relative atomic mass ratio) of gold is 0.5%, the content (relative atomic mass ratio) of rare earth element samarium is 0.3%, and the balance is silver metal.
Further, the air conditioner is characterized in that,
the torsional mode quartz tuning fork thermosensitive resonator is characterized in that the quartz short column is cut by xzwt (19-35)/(70-90), the thermosensitive resonator body is cut by xzwt (19-35)/(70-90), and the thermal resonator body is matched with the cut of the quartz short column, and the torsional mode quartz tuning fork thermosensitive resonator is prepared by an optical cold processing technology, a wet chemical etching technology and a dry physical etching technology.
After the technical scheme is adopted, compared with the prior art, the quartz tuning fork temperature sensor with the twisted mode has the following beneficial effects:
1. the invention provides a distortion mode quartz tuning fork temperature sensor of a four-open-two-closed-end distortion mode quartz tuning fork thermosensitive resonator, which adopts an xzwt (19-35)/(70-90) cut and T-shaped support mounting structure, and not only maintains the characteristic of insensitivity to acceleration, but also greatly reduces the gravity center of the quartz tuning fork temperature sensor, obviously reduces the area of a base region of the quartz tuning fork, reduces the volume and the weight of the device, improves the strong mechanical vibration and impact resistance, improves the temperature measurement sensitivity, improves the linearity and improves the long-term stability; compared with the traditional twisted vibration mode quartz tuning fork temperature sensor, the structure of the four-open-two-closed end and the T-shaped support mounting structure are novel, the excitation electrode is unique in material and structure, the acoustic impedance and the thermal expansion coefficient of the support body and the quartz wafer are matched, and the sensor is innovative, improves the temperature sensitivity and the linearity, increases the suppression degree of a parasitic vibration mode, strengthens the energy trap effect of a thermosensitive resonator, is quite suitable for the fields of spaceflight, aviation and navigation, and is particularly suitable for being used by equipment such as satellites, unmanned aerial vehicles, submarines and the like.
2. The center of gravity of the distorted quartz tuning fork thermosensitive resonator of the integrated T-shaped support mounting structure is low, so that the distorted quartz tuning fork thermosensitive resonator has strong mechanical vibration resistance and impact resistance and is not influenced by acceleration in frequency-temperature characteristics.
3. The combined yoke arm of each of the four groups of combined yoke arms of the thermosensitive resonator main body consists of two first sub-yoke arms and one second sub-yoke arm, and the total length of the yoke arms can be at least equal to more than 2 times of the length of the yoke arms of the conventional quartz tuning fork thermosensitive resonator under common process conditions, so that a product with the same frequency as that of the conventional torsional mode quartz tuning fork thermosensitive resonator can be prepared under the same process conditions, and the volume of the product can be reduced by at least more than one time. Therefore, the invention not only enhances the mechanical vibration and impact resistance, but also reduces the cost and improves the response speed.
4. The horizontal metal airtight packaging shell comprises a kovar tube cap, a kovar tube seat and a first pin and a second pin, wherein the inner surface and the outer surface of the kovar tube cap are sputtered with tungsten copper layers, the inner surface and the outer surface of the kovar tube seat are sputtered with tungsten copper layers, the first pin and the second pin are made of kovar materials plated with nickel, a layer of copper or silver stress absorbing layer is plated on the surfaces of the tube cap, the tube seat, the first pin and the second pin, and then a nickel metal protective layer is electroplated. The scheme can improve and promote the high temperature bearing capacity, corrosion resistance and other characteristics of the tube cap, the tube seat and each pin of the horizontal metal packaging structure.
5. The solid solution of graphene carbon fiber-mullite ceramic powder-low-temperature glass powder is arranged between the periphery of the rectangular through hole at the gravity center position of the common base region and the quartz short column, and two inward rectangular grooves are respectively arranged in the width direction of the common base region, so that the vibration energy leaked by the tuning fork can be greatly attenuated, and the tuning fork has a strong energy trapping effect.
6. The excitation electrodes, the first surface electrode and the second surface electrode are four layers of gold film electrodes manufactured by a sputtering process, and respectively comprise a strong adhesion layer, a stress absorption layer, a diffusion prevention layer and a conductive and lead bonding layer, the four layers of gold film electrodes have strong adhesion with quartz crystals, can resist high temperature and corrosion, can improve the time drift and temperature drift of the sensor, and the frequency drift of the four layers of gold film electrodes can be less than 0.3 to 10 -6 。
Drawings
FIG. 1 is a schematic view of the internal structure of a twisted mode quartz tuning fork temperature sensor of the present invention after being cut;
FIG. 2 is a schematic front structural view of a thermosensitive resonator body of the torsional mode quartz tuning fork thermosensitive resonator of the present invention;
FIG. 3 is a schematic diagram of a-a section and a b-b section in FIG. 2 and a schematic diagram of the connection principle of each excitation electrode;
FIG. 4 is an orientation schematic diagram of a thermosensitive resonator body of xzwt (19-35)/(70-90) quartz crystal cut type.
Wherein the content of the first and second substances,
a horizontal shell 10, a pipe cap 11 and a pipe seat 12;
the method comprises the following steps that (1) a torsional mode quartz tuning fork thermosensitive resonator 20, a thermosensitive resonator body 21, a quartz short column 22 and a solid solution 23;
a first pin 31, a second pin 32, a first glass frit insulator 33, a second glass frit insulator 34;
a common base region 40, a first recess 41, a second recess 42, a third recess 43, a fourth recess 44, a through hole 45;
first prong 51, second prong 52, third prong 53, fourth prong 54, fifth prong 55, sixth prong 56, seventh prong 57, eighth prong 58;
a first crossbar 61, a second crossbar 62, a third crossbar 63, a fourth crossbar 64;
a first surface electrode 71, a second surface electrode 72;
the driving device comprises a first excitation electrode A1, a second excitation electrode A2, a third excitation electrode A3, a fourth excitation electrode A4, a fifth excitation electrode A5, a sixth excitation electrode A6, a seventh excitation electrode A7 and an eighth excitation electrode A8; a first excitation electrode nine A9, a first excitation electrode ten a10, a first excitation electrode eleven a11, a first excitation electrode twelve a12, a first excitation electrode thirteen a13, a first excitation electrode fourteen a14, a first excitation electrode fifteen a15, a first excitation electrode sixteen a16;
the first excitation electrode B1, the second excitation electrode B2, the second excitation electrode III B3, the second excitation electrode IV B4, the second excitation electrode V B5, the second excitation electrode VI B6, the second excitation electrode VII B7 and the second excitation electrode VIII B8; a second excitation electrode nine B9, a second excitation electrode ten B10, a second excitation electrode eleven B11, a second excitation electrode twelve B12, a second excitation electrode thirteen B13, a second excitation electrode fourteen B14, a second excitation electrode fifteen B15, and a second excitation electrode sixteen B16.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a reverse description, these orientation words do not indicate and imply that the device or element being referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be considered as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The invention aims to provide a twisted mode quartz tuning fork temperature sensor of a four-open-end-two-closed-end twisted mode quartz tuning fork thermosensitive resonator adopting a T-shaped support mounting structure, which solves the defects of the conventional twisted mode quartz tuning fork temperature sensor pointed out in the background art. The device not only maintains the characteristic of insensitivity to acceleration, greatly reduces the gravity center of the tuning fork temperature sensor, obviously reduces the base area of the quartz tuning fork, reduces the volume and the weight of the device, improves the strong mechanical vibration and impact resistance, but also improves the temperature measurement sensitivity, improves the linearity and improves the long-term stability; particularly, compared with the traditional twisted vibration mode quartz tuning fork temperature sensor, the four-open-two-closed-end structure of the sensor is novel in T-shaped support mounting structure, the excitation electrode is unique in material and structure, and the support body is matched with the quartz wafer in acoustic impedance and thermal expansion coefficient, so that the sensor is quite innovative. In addition, the temperature sensitivity and the linearity are improved, the degree of inhibition on a parasitic vibration mode is increased, and the energy trap effect is enhanced. Obviously, if the temperature measuring device is integrated in an acceleration testing system, the temperature measuring data provided by the temperature measuring device is used for temperature compensation of an acceleration sensor, a pressure sensor and the like, the reliability is high, the nuclear radiation resistance is high, and the magnetic field resistant working capacity is good. The following is a detailed description of specific embodiments.
The first embodiment is as follows:
as shown in 1~3, the present embodiment provides a twisted mode quartz tuning fork temperature sensor, which comprises a horizontal type housing 10 and a twisted mode quartz tuning fork thermal resonator 20 disposed inside the horizontal type housing 10, wherein the horizontal type housing 10 is a horizontal type metal hermetically sealed housing, and the bottom of the horizontal type housing 10 is further provided with a first pin 31 and a second pin 32 protruding from the inside thereof; the distortion mode quartz tuning fork thermal resonator 20 is a four-open-two-closed-end distortion mode quartz tuning fork thermal resonator (FTTQFR) with a T-shaped supporting and mounting structure, and comprises a thermal resonator body 21 and a quartz short column 22 vertically connected with the main surface of a wafer of the thermal resonator body 21, wherein the connection position of the quartz short column 22 and the thermal resonator body 21 is positioned at the gravity center position of the thermal resonator body 21. Further, the thermal sensitive resonator main body 21 includes a common base region 40 and a plurality of quartz forked arms extending from the common base region 40, and the extending direction of the plurality of quartz forked arms, that is, the formed plane is also perpendicular to the central line of the quartz short column 22, so that the thermal sensitive resonator main body 21 and the quartz short column 22 form a "T" shaped integrated structure. Furthermore, excitation electrode groups are respectively arranged on the peripheral surfaces of the plurality of quartz fork arms, a first surface electrode 71 and a second surface electrode 72 are arranged on the quartz short column 22, and the excitation electrode groups are respectively and correspondingly and electrically connected with the first pin 31 and the second pin 32 on the horizontal shell 10 through the first surface electrode 71 and the second surface electrode 72, so that the temperature can be measured by matching with an external circuit.
Obviously, compared with the vertical structure in the prior art, the torsional mode quartz tuning fork thermal resonator 20 provided by the present embodiment has a very low center of gravity, so that it has strong mechanical vibration resistance and impact resistance, and the frequency-temperature characteristic is not affected by the acceleration.
The horizontal casing 10 of the present embodiment includes a pipe cap 11 and a pipe seat 12, wherein a first glass frit insulator 33 and a second glass frit insulator 34 are hermetically disposed on the pipe seat 12, a first pin 31 passes through the first glass frit insulator 33 in an airtight manner and is formed as an integral structure, and a second pin 32 passes through the second glass frit insulator 34 in an airtight manner and is also formed as an integral structure. Preferably, the cap 11 and the socket 12 are both made of kovar with tungsten copper layers sputtered on the inner and outer surfaces, and the first pin 31 and the second pin 32 are both made of kovar with nickel plating. The cap 11 and the base 12 are welded together by energy storage welding or laser welding in a nitrogen atmosphere or a helium atmosphere, and the whole is formed into an airtight package structure.
Preferably, in this embodiment, a conventional resonant temperature sensor is not provided with a vacuum (1.0 pa to 0.1kpa) inside, but a horizontal housing 10 is filled with a heat conducting gas with good heat conduction, the heat conducting gas is helium or nitrogen, and the content of the heat conducting gas is expressed as pressure and ranges from 0.5 to 1.3kpa, so as to improve the response speed, reduce the pressure difference between the inside and the outside of the horizontal housing 10, reduce the gas leakage rate, and prolong the service life of the temperature sensor. Of course, in other embodiments, a vacuum may be used inside the housing, and the present invention should also fall into the scope of the present invention.
In order to enable the FTTQFR to be suitable for satellite, unmanned aerial vehicle and other equipment to perform 1000 TEMPERATURE cycles under the frequent thermal shock condition of-200 to +200 ℃ (for example, U.S. military standard MIL-STD-883g METHOD 1010.8 June 2004 1 METHOD 1010.8 temparature circulation), the welding strength can still meet the requirement of stable operation, and the horizontal metal airtight packaging shell of the embodiment is completely different from the tube cap and the tube seat of the conventional twisted-mode quartz tuning fork TEMPERATURE sensor in material and structure. The tube cap, the tube seat and the pin of the conventional twisted-mode quartz tuning fork temperature sensor are all made of Kovar alloy, and are mostly in vertical metal packaging structures with phi 2x 6mm or phi 3 x 8 mm; the cap 11 and the socket 12 of the horizontal metal package structure of the present embodiment are made of kovar material with a tungsten-copper layer sputtered on the surface, and the thickness of the kovar material is 0.8 to 8 μm, and the first pin 31 and the second pin 32 are made of kovar material with nickel plating, and the thickness of the kovar material is 0.8 to 8 μm. The kovar alloy is a corrosion-resistant alloy taking iron as a main component, has strong bonding force with a glass powder insulator, and has matched thermal expansion coefficients, so that good air tightness can be obtained; however, kovar is mainly composed of iron, and the corrosion resistance of kovar cannot completely meet the requirements of aviation and aerospace systems.
As a further scheme, in order to ensure that the sensor works reliably at-200 to +200 ℃ within a wide temperature range, in the embodiment, an absorption stress layer is firstly electroplated on the surfaces of the pipe cap 11, the pipe seat 12, the first pin 31 and the second pin 32 which are made of kovar, the absorption stress layer is a copper layer, the thickness of the copper layer is 15 to 30 μm, and then a nickel metal layer is electroplated on the surface of the copper layer, and the thickness of the nickel metal layer is 0.8 to 10 μm. This is because nickel in the kovar nickel plating layer reacts with tin, silicon, and the like in the solder to form an intermetallic compound, and it is known that the intermetallic compound has not only poor electrical conductivity but also poor mechanical strength, and seriously deteriorates reliability. Therefore, in the present embodiment, the high temperature resistance, the corrosion resistance, the nuclear radiation resistance, and the like of the cap 11, the socket 12, the first pin 31, and the second pin 32 of the horizontal metal package structure are all greatly improved.
Preferably, in the present embodiment, a through hole 45 is provided at the center of gravity of the common base region 40 of the thermal resonator body 21, the through hole 45 being a rectangular through hole, the thermal resonator body 21 being aligned with the mechanical axis (Y ' axis) of the quartz crystal along the long side direction of the rectangular through hole, aligned with the optical axis (Z ' axis) of the quartz crystal along the short side direction of the rectangular through hole, and aligned with the electrical axis (X ' axis) of the quartz crystal along the depth direction of the rectangular through hole; the cross section of the quartz stub 22 is rectangular, the long side direction of the rectangle coincides with the mechanical axis (Y ' axis) direction of the quartz crystal, the short side direction of the rectangle coincides with the optical axis (Z ' axis) direction of the quartz crystal, and the normal direction of the cross section coincides with the electrical axis (X ' axis) direction of the quartz crystal.
This embodiment is longA graphene carbon fiber-mullite ceramic powder-low temperature glass powder solid solution 23 is arranged between the inner wall of the square through hole 45 and the quartz short column 22, because the thermal expansion coefficient of the graphene carbon fiber-mullite ceramic powder-low temperature glass powder solid solution 23 is 3.2x10 -6 ~4.5x10 -6 The acoustic impedance of the solid solution filler is matched with that of the FTTQFR quartz crystal, and the mullite ceramic powder particles, the graphene carbon short fibers and the low-temperature glass powder fused structure of the solid solution 23 have larger damping and attenuation on the vibration in a torsion mode, a bending mode and a shear mode, obviously, the vibration energy leaked by the tuning fork can be greatly attenuated, and the solid solution 23 has stronger energy trap effect, has larger adhesive force on the FTTQFR quartz crystal, and has a thermal expansion coefficient matched with that of the FTTQFR quartz crystal, so that the mechanical strength of the quartz solution is obviously improved. In short, the FTTQFR with the combined T-shaped three-dimensional structure provided by the embodiment can greatly improve the mechanical vibration resistance, impact resistance and acceleration interference resistance, and is convenient for installation and use of temperature measurement systems such as satellites, unmanned aerial vehicles and submarines.
As shown in fig. 2, the thermal resonator body 21 of the present embodiment includes eight first sub-arms, which are a first prong 51, a second prong 52, a third prong 53, a fourth prong 54, a fifth prong 55, a sixth prong 56, a seventh prong 57, and an eighth prong 58, respectively, and four second sub-prongs, which are a first crossbar 61, a second crossbar 62, a third crossbar 63, and a fourth crossbar 64, respectively, wherein the first prong 51 and the third prong 53 protrude from the common base 40 to one side (left side in fig. 2) in the direction of the optical axis (Z ″ axis) of the quartz crystal, and the fifth prong 55 and the seventh prong 57 protrude from the common base 40 to the other side (right side in fig. 2) in the direction of the optical axis (Z ″ axis) of the quartz crystal. The first fork arm 51, the third fork arm 53, the fifth fork arm 55 and the seventh fork arm 57 extend out from the common base region 40 and are directly connected with the common base region 40, and the other fork arms are indirectly connected with the common base region 40, specifically, as shown in fig. 2, the first fork arm 51 and the second fork arm 52 at the upper left corner are connected into a whole through a first cross arm 61 to form a shape of Contraband to form a first combined fork arm; the third fork arm 53 and the fourth fork arm 54 at the lower left corner are connected into a whole through a second cross arm 62 to form a shape of Contraband to form a second combined fork arm, and the first combined fork arm and the second combined fork arm are arranged in axial symmetry about the transverse center line of the common base area 40; the fifth fork arm 55 and the sixth fork arm 56 at the upper right corner are connected into a whole through a third cross arm 63 to form a third combined fork arm, and the third combined fork arm and the first combined fork arm are arranged in axial symmetry about the longitudinal center line of the common base region 40; the seventh yoke 57 and the eighth yoke 58 at the lower right corner are connected together by a fourth crossbar 64 to form a fourth combined yoke, and are arranged axially symmetrically with the second combined yoke about the longitudinal center line of the common base region 40. That is, the left and right prongs are axisymmetric about a longitudinal centerline of the common base region 40, and the upper and lower prongs are axisymmetric about a transverse centerline of the common base region 40 (where the axisymmetric is limited to the structural shape and does not include the excitation electrode). This results in a four-start-two-dead-end (four-start, two dead ends connected to the common base region 40) configuration.
Unlike the structure of the conventional twisted mode tuning fork thermosensitive resonator, the first combined yoke, the second combined yoke, the third combined yoke and the fourth combined yoke of the present embodiment are all yokes with one end fixed and the other end in free vibration form. And the torsional mode vibration of the first combined yoke and the torsional mode vibration of the fourth combined yoke are in phase; the torsional mode vibration of the second combined yoke and the torsional mode vibration of the third combined yoke are in the same phase; that is, the torsional mode vibration of the first combined yoke and the torsional mode vibration of the second combined yoke are out of phase; the torsional mode vibration of the third combined yoke is out of phase with the torsional mode vibration of the fourth combined yoke. Obviously, the cooperation of the first combination yoke, the second combination yoke, the third combination yoke and the fourth combination yoke can significantly reduce the vibration energy leakage of the torsional mode vibration in the common base region 40, and promote the suppression of the parasitic vibration mode, thereby increasing the energy trapping effect. In other words, compared with the conventional twisted mode quartz tuning fork thermal resonator, the size of the common base region 40 can be obviously reduced, so that the response speed of the sensor is improved, the Q value is increased, and the resolution and the stability are improved.
Since the combined yoke of each of the four groups of combined yokes is composed of two first sub-yokes and one second sub-yoke, the total length of the yoke can be at least equal to more than 2 times of the length of the yoke of the conventional quartz tuning fork thermal-sensitive resonator under normal process conditions, so that the frequency of the FTTQFR of the embodiment can be much lower than that of the conventional quartz tuning fork thermal-sensitive resonator according to the working mechanism of the twisted-mode quartz tuning fork thermal-sensitive resonator. In other words, under the same process conditions, if a product with the same frequency as that of the conventional twisted-mode quartz tuning fork thermal resonator is to be prepared, the volume of the product can be reduced by more than one time. Therefore, the embodiment not only enhances the mechanical vibration and impact resistance, but also improves the temperature sensitivity and linearity, reduces the cost and improves the response speed.
With reference to fig. 2, in this embodiment, a rectangular through hole 45 is provided in a region near the center of gravity of the common base region 40, and in addition, two grooves recessed into the common base region 40 are formed on two side edges (upper and lower edges in fig. 2) in the mechanical axis (Y' axis) direction of the common base region 40, that is, a first groove 41, a second groove 42, a third groove 43, and a fourth groove 44, respectively, where the first groove 41 and the third groove 43 are collinear in the vertical direction, the second groove 42 and the fourth groove 44 are collinear in the vertical direction, the first groove 41, the third groove 43, the second groove 42, and the fourth groove 44 are axially symmetric with respect to the transverse center line of the common base region 40, and the first groove 41, the second groove 42, the third groove 43, and the fourth groove 44 are axially symmetric with respect to the longitudinal center line of the common base region 40, respectively. They can further attenuate the vibration energy leaked by the tuning fork and have rather strong energy trap effect.
Since the torsional mode vibration of the first combined yoke and the torsional mode vibration of the fourth combined yoke are in phase; the torsional mode vibration of the second combined yoke and the torsional mode vibration of the third combined yoke are in the same phase; the torsional mode vibration of the first combined yoke and the torsional mode vibration of the second combined yoke are out of phase; the torsional mode vibration of the third combined yoke is out of phase with the torsional mode vibration of the fourth combined yoke. Obviously, through the interaction between the combined fork arms, the leakage of the torsional mode vibration in the common base region 40 can be obviously reduced, the suppression of a parasitic vibration mode is improved, the energy trap effect is strengthened, the Q value is increased, and the resolution and the stability are improved. Preferably, signals of the two can be output to an external processing circuit for signal processing, so that not only the intensity of a distortion mode (main signal) is enhanced, but also signals of other modes (clutter spurious) are suppressed, obviously, technical indexes such as spectral purity and sensitivity are far better than those of a conventional distortion mode quartz tuning fork thermosensitive resonator, and interference of external mechanical vibration and impact on the working characteristics of the thermosensitive resonator can be reduced through processing such as filtering and screening of the signals.
With continued reference to fig. 2, the width direction of the rectangular through hole 45 of the common base region 40 coincides with (is parallel to) the length direction of the common base region 40, and the length direction of the rectangular through hole of the common base region 40 coincides with (is parallel to) the width direction of the common base region 40. Preferably, the vertical distance L1 between the symmetric center line of the rectangular through hole 45 of the common base region 40 in the width direction and the symmetric center line (i.e. the longitudinal center line) of the common base region 40 in the length direction is less than or equal to 0.7L, wherein L is half of the length of the common base region 40 of FTTQFR; the vertical distance L2 between the longitudinal positioning center lines of the first groove 41 and the third groove 43 and the longitudinal positioning center line of the second groove 42 and the fourth groove 44 and the symmetric center line (i.e. the longitudinal center line) in the length direction of the common base region 40 is less than or equal to 0.6L, wherein L is half of the length of the common base region 40 of the FTTQFR.
More preferably, the first groove 41, the second groove 42, the third groove 43, and the fourth groove 44 are all non-penetrating structures, that is, a residual wafer (not shown in the figure) is further formed in each groove, the residual wafer is parallel to the upper surface and the lower surface of the common base region 40, the depth from the residual wafer to the upper surface and the lower surface of the common base region 40 is 0.25 to 0.33d, the thickness of the residual wafer is 0.34 to 0.5D, and D is the thickness of the common base region 40 of the monolithic FTTQFR. The preferred scheme can inhibit the leakage of vibration energy, has excellent energy trapping effect and does not reduce the capability of the vibration energy to resist mechanical vibration, impact and acceleration interference.
As shown in fig. 2, the driver electrode groups of the FTTQFR in the present embodiment include a first driver electrode group disposed on upper and lower surfaces of the first and second combined yokes and a second driver electrode group disposed on upper and lower surfaces of the third and fourth combined yokes.
Specifically, as shown in fig. 3, the first excitation electrode group includes first excitation electrode one A1, first excitation electrode two A2, first excitation electrode five A5, first excitation electrode six A6, first excitation electrode nine A9, first excitation electrode ten a10, first excitation electrode thirteen a13, first excitation electrode fourteen a14, which are located on the upper surfaces (the upper surfaces in fig. 1, that is, the left side surfaces in fig. 3) of fourth yoke 54, third yoke 53, first yoke 52, and first excitation electrode three A3, first excitation electrode four A4, first excitation electrode seven A7, first excitation electrode eight A8, first excitation electrode eleventh a11, first excitation electrode twelve a12, first excitation electrode fifteen a15, and first excitation electrode sixteen a16, which are located on the lower surfaces (the lower surfaces in fig. 1, that is, the right side surfaces in fig. 3) in this order; a total of 16 excitation electrodes.
The second excitation electrode group includes a first excitation electrode B1, a second excitation electrode B2, a fifth excitation electrode B5, a second excitation electrode six B6, a second excitation electrode nine B9, a second excitation electrode ten B10, a second excitation electrode thirteen B13, a second excitation electrode fourteen B14, which are sequentially located on the upper surfaces (the upper surface in fig. 1, i.e., the left side surface in fig. 3) of the eighth prong 58, the seventh prong 57, the fifth prong 55, and the sixth prong 56, and a third excitation electrode B3, a fourth excitation electrode B4, a seventh excitation electrode seven B7, a second excitation electrode eight B8, a second excitation electrode eleventh B11, a second excitation electrode twelve B12, a fifteenth excitation electrode B15, a sixteenth excitation electrode B16, which are located on the lower surfaces (the lower surface in fig. 1, i.e., the right side surface in fig. 3) of the lower surface; a total of 16 excitation electrodes.
The first excitation electrode II A2, the first excitation electrode five A5, the first excitation electrode deca A10, the first excitation electrode thirteen A13, the first excitation electrode three A3, the first excitation electrode eight A8, the first excitation electrode eleven A11 and the first excitation electrode sixteen A16 are in the same phase and are connected with the first connecting terminal M; the first excitation electrode A1, the first excitation electrode six A6, the first excitation electrode nine A9, the first excitation electrode fourteen A14, the first excitation electrode four A4, the first excitation electrode seven A7, the first excitation electrode twelve A12 and the first excitation electrode fifteen A15 are in phase, and are connected with the second connection terminal N.
The second excitation electrode II B2, the second excitation electrode fifth B5, the second excitation electrode decaB 10, the second excitation electrode thirteen B13, the second excitation electrode third B3, the second excitation electrode eighth B8, the second excitation electrode eleventh B11 and the second excitation electrode sixteen B16 are in the same phase and are connected with a second connecting terminal N; the first second excitation electrode B1, the sixth second excitation electrode B6, the ninth second excitation electrode B9, the fourteenth second excitation electrode B14, the fourth second excitation electrode B4, the seventh second excitation electrode B7, the twelfth second excitation electrode B12 and the fifteenth second excitation electrode B15 are in phase and connected to the first connection terminal M.
The first excitation electrode group and the second excitation electrode group of the present embodiment are four-layer gold film electrodes suitable for FTTQFR manufactured by a sputtering process. Unlike the conventional twisted-mode quartz tuning fork temperature sensor, the present embodiment does not adopt a conventional double-layer thin film electrode structure made of chromium metal (substrate layer) -silver metal (conductive and wire bonding layer) or chromium metal (substrate layer) -gold material metal (conductive and wire bonding layer), but a four-layer gold thin film electrode manufactured by a sputtering process: the first layer is a strong adhesion layer, is positioned on the surface of the quartz crystal, is composed of a chromium-nickel alloy film, and has the thickness of 5 to 15nm; the second layer is a stress absorption layer, is positioned on the strong-adhesion layer, is made of soft metal silver or copper, and has the thickness of 100 to 300nm; the third layer is a diffusion stopping layer, is positioned on the stress absorption layer, is made of tantalum or hafnium metal, and has the thickness of 10 to 50nm; the fourth layer is a conductive and lead bonding layer, is positioned on the diffusion barrier layer, and is composed of an alloy film of silver-gold-rare earth element samarium, wherein the alloy film takes silver metal as a main body, the thickness of the alloy film is 150 to 800nm, the content (relative atomic mass ratio) of gold is 0.5%, the content (relative atomic mass ratio) of rare earth element samarium is 0.3%, and the rest is silver metal. Wherein the third diffusion barrier layer functions to prevent diffusion of metal ions in the fourth conductive and wire bonding layer to the underlying electrode layer.
The four-layer gold film electrode is mainly characterized in that the four-layer gold film electrode has strong adhesion force with quartz crystals, can resist high temperature and corrosion, can improve the time drift and temperature drift of a sensor, and the frequency drift of the four-layer gold film electrode can be less than 0.3 x10 -6 The properties of each layer of metal film are as follows:
1. the strong-adhesion layer (substrate layer) -chromium-nickel alloy film layer is a first metal film layer adhered to the quartz wafer; the coefficient of thermal expansion of the chromium-nickel alloy is 10.8 x10 -6 The adhesion force of the chromium metal to the quartz wafer and the compactness of the film layer are better than those of the traditional chromium metal layer (the thermal expansion coefficient of the chromium metal is 7 x 10) -6 V. C, and the coefficient of thermal expansion of the cut quartz crystal is 13.7 x10 -6 /° c) and has a strong affinity for the subsequent tantalum or hafnium metal film layer. Therefore, the firmness of the attachment of the excitation electrode and the quartz wafer can be remarkably improved, and the severe environment resistant working capability is improved.
2. The stress absorbing layer, a silver or copper film, is a second metal film attached to the quartz wafer, a stress buffering and absorbing layer made of soft metal silver or copper. The temperature drift and the time drift of the traditional twisted-mode quartz tuning fork temperature sensor are large, and the requirements on a stress relief process are strict. Since the stress absorbing layer will buffer and absorb various stresses, it is not necessary to excessively count various stresses caused by the material and thickness of the thin film, the orientation of the substrate at the sputtering rate of the thin film, and the like, by considering the preparation of the optimal stress absorbing layer thickness and the factory heat treatment process. Obviously, the method can be used once and for all.
3. Diffusion barrier layer-tantalum or hafnium metal layer, which is a third metal film attached to the quartz wafer; the metal layer has high melting point and strong affinity with the silver or copper film layer and the silver-gold-rare earth element samarium alloy film layer, and has the function of preventing the mutual diffusion of atoms and ions generated in the first chromium-nickel alloy layer, the second silver or copper film layer and the fourth silver-gold-rare earth element samarium alloy film layer in the temperature measuring process of a wide temperature range or in a high temperature range for a long time. Because the temperature change or long-term high temperature of the chromium metal (substrate layer) -silver metal (conductive and lead bonding layer) or chromium metal (substrate layer) -gold material metal (conductive and lead bonding layer) of the conventional twisted-mode quartz tuning fork temperature sensor during temperature measurement causes the mutual movement of atoms and ions of the chromium-silver or chromium-gold metals, namely the thermal diffusion of atoms and ions, the stress of the metal film layers of the two parts is changed, and the metal film on the surface layer is oxidized and vulcanized to be precipitated as oxides and sulfides, so that the changes of mass loading and stress loading are formed on the surface of the metal film layers, and the frequency drift, namely the temperature drift and the time drift, is caused. The tantalum or hafnium metal film of the present solution can suppress or even eliminate such temperature drift and time drift of conventional twisted mode quartz tuning fork temperature sensors.
4. The conductive and lead bonding layer-the silver-gold-rare earth element samarium alloy film layer taking silver metal as a main body has good conductivity, the relative resistivity of the conductive and lead bonding layer is 3.5 to 4.2 mu omega cm, and the conductive and lead bonding layer is resistant to higher temperature, corrosion and high in adhesive force and temperature cycle resistance.
As shown in fig. 1, in the present embodiment, the first surface electrode 71 and the second surface electrode 72 are respectively formed by sputtering on the left side surface and the right side surface, which are the two side surfaces with the largest surface area of the quartz stub 22, one ends of the first surface electrode 71 and the second surface electrode 72 are electrically connected to the first connection terminal M and the second connection terminal N of the first excitation electrode group and the second excitation electrode group corresponding to FTTQFR by spot welding, laser welding or soldering, respectively, the first connection terminal M and the second connection terminal N are two concentrated electrical connection points disposed on the thermal resonator body 21, and the other ends of the first surface electrode 71 and the second surface electrode 72 are connected to and fixed to the first pin 31 and the second pin 32 by welding or high temperature conductive adhesive coating, respectively. And finally, welding the pipe cap 11 and the pipe seat 12 of the horizontal metal airtight packaging shell into a whole by using an energy storage welding or laser welding technology in a nitrogen atmosphere or a helium atmosphere to realize airtight sealing.
Preferably, in this embodiment, the distance d between the lower surface of the quartz short column 22 and the inner bottom surface of the stem 12 is greater than or equal to 0.5mm, and the cross-sectional areas of the first pin 31 and the second pin 32 are much smaller than the cross-sectional area of the quartz short column 22, so that when the interference signals such as mechanical vibration and impact from the external environment are transmitted to the quartz short column 22 through the pins on the stem 12, the intensity thereof is greatly attenuated, and when the interference signals are transmitted to the thermal resonator body 21 through the quartz short column 22 and the solid solution 23, the mechanical vibration and impact energy are further absorbed and damped, so that the interference signals of vibration and impact transmitted to the thermal resonator body 21 are almost negligible, and thus the interference of external mechanical vibration and impact can be prevented.
Unlike the conventional quartz sensor, the electrodes disposed on the left and right sides of the quartz stub 22 in this embodiment are four metal thin film electrodes, specifically, the first surface electrode 71 and the second surface electrode 72 are multilayer metal thin film electrodes made of an alloy with strong adhesion to the quartz crystal, a high melting point metal, a soft metal, and a metal material with good conductivity, and include four metal films: the first layer is a strong adhesion layer, is positioned on the surface of the quartz crystal, is composed of a chromium-nickel alloy film, and has the thickness of 5 to 15nm; the second layer is a stress absorption layer, is positioned on the chromium-nickel alloy film layer, is composed of soft metal silver or copper, and has the thickness of 100 to 300nm; the third layer is a diffusion stopping layer, is positioned on the stress absorption layer and is made of tantalum or hafnium metal, and the thickness of the diffusion stopping layer is 10 to 50nm; the fourth layer is a conductive and lead bonding layer, is positioned on the diffusion barrier layer, and is an alloy film layer of silver-gold-rare earth element samarium, the thickness of the alloy film layer is 150 to 800nm, the content (relative atomic mass ratio) of gold is 0.5%, the content (relative atomic mass ratio) of rare earth element samarium is 0.3%, and the rest is silver metal. Wherein the third diffusion barrier layer functions to prevent diffusion of metal within the conductive and wire bond layer to the underlying electrode layer.
Preferably, the quartz short column 22 of the present embodiment is a quartz double-turning-angle thermosensitive cutting type — xzwt (19-35)/(70-90) cutting type, and the thermosensitive resonator body 21 of the present embodiment is also an xzwt (19-35)/(70-90) cutting type and is matched with the cutting type of the quartz short column 22. Preferably, the thermal resonator body 21 and the quartz stub 22 of the present embodiment both use a quartz crystal material of xzwt 29/70 degree cut type.
The quartz double-turning-angle thermosensitive cutting type xzwt (19-35)/(70-90) proposed and used by the invention is described as follows:
the quartz crystal is a single crystal belonging to a trigonal system and has anisotropy. The elastic constant (including the elastic compliance constant S55) changes with the crystal orientation and the direction of the quartz crystal, namely changes in a form of 'tensor' in geometry and algebra. Each component of its elastic constant-temperature characteristic tensor is different. It is clear that quartz resonators with different quartz crystal cuts have widely different frequency-temperature characteristics, and that their frequency-temperature characteristics also vary with the azimuth angle of the quartz resonator in the crystal cut. The first-order temperature coefficient of the xzwt (19-35)/(70-90) cut type torsional mode quartz tuning fork thermosensitive resonator is higher, and is usually 30 x10 -6 /℃~22*10 -6 However, the second order temperature coefficient is very small, and is approximately equal to zero, i.e. the linearity is very good. In addition, the parasitic vibration mode is less, and the requirement on process errors is not strict, so that the finished product rate can be improved, and the consistency of products can be improved. It is well suited for use with the FTTQFR of the integrated T-shaped support mounting structure of the present invention.
For the convenience of understanding of the same students or other professionals, according to the cut symbol writing form specified by the IRE standard, the dual-pivot-angle thermosensitive Dan Yingxin cut xzwt (19-35)/(70-90) of the invention is described as follows:
the cut symbols specified by the International Radio engineering Institute of Radio Engineers (IRE) standard include a set of letters (X, Y, Z, t, l, w) and an angle. The original directions of the thickness and the length of the quartz wafer are represented by the sequential arrangement sequence of any two letters in X, Y, Z; the position of the axis of rotation is indicated by the letters t (thickness), l (length), w (width). When the angle is positive, counterclockwise rotation is indicated; when the angle is negative, clockwise rotation is indicated.
A cutting orientation schematic diagram of a thermosensitive quartz wafer with a double-turning-angle xztwt (19-35)/(70-90) cutting type can be seen in FIG. 4. A first letter x of the method represents the thickness direction of the original position of a quartz wafer, a second letter z represents the length direction of the original position of the quartz wafer, and a third letter w, a fourth letter t and an angle (19-35 degrees)/(70-90 degrees) represent that the quartz wafer firstly winds around the width w and then winds around the thickness t and respectively rotates by (19-35 degrees) and (70-90 degrees) along the counterclockwise direction.
The FTTQFR provided by the invention adopts a quartz crystal with double turning angles of thermal cut-xzwt (19-35)/(70-90), works in a fundamental frequency torsional vibration mode, and is prepared by mechanical and optical cold processing, wet chemical etching, dry physical etching, such as ion beam etching and other technologies. The excitation electrode is the four-layer special alloy film, the technical problems of low working frequency, high resolution, strong mechanical vibration impact resistance, high accuracy and excellent long-term stability in the industry are solved, the excitation electrode is particularly suitable for long-term working in an acceleration environment, and the excitation electrode can be calibrated in 3 years or even 5 years.
It can be known from the above, the distortion mode quartz tuning fork temperature sensor provided by the embodiment has a low gravity center, a large area of the supporting area, strong mechanical vibration and impact resistance, and frequency-temperature characteristics not affected by acceleration, and solves the difficult problems of low working frequency, high resolution, acceleration resistance, strong mechanical vibration impact resistance, high accuracy and excellent long-term stability in the industry.
Example two:
the difference between the present embodiment and the first embodiment is; the thermal resonator body 21 and the quartz stub 22 of the present embodiment are made of a quartz crystal material of xzwt35 °/90 ° -cut type. The characteristics of the twisted mode quartz tuning fork temperature sensor provided by the embodiment also achieve the aim of the invention.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (10)

1. A twisted mode quartz tuning fork temperature sensor, comprising:
the quartz tuning fork heat-sensitive resonator comprises a horizontal shell (10), wherein a torsional mode quartz tuning fork heat-sensitive resonator (20) is arranged in the horizontal shell (10), and a first pin (31) and a second pin (32) which extend out of the horizontal shell (10) are further arranged at the bottom of the horizontal shell;
the quartz tuning fork thermal resonator comprises a distortion mode quartz tuning fork thermal resonator (20), wherein the distortion mode quartz tuning fork thermal resonator (20) comprises a thermal resonator main body (21) and a quartz short column (22) vertically connected with the gravity center position of the thermal resonator main body (21); the heat-sensitive resonator body (21) comprises a common base region (40) and a plurality of quartz forked arms which extend out of the common base region (40) and are perpendicular to the quartz short column (22), excitation electrode groups are arranged on the peripheral surfaces of the quartz forked arms, a first surface electrode (71) and a second surface electrode (72) are arranged on the quartz short column (22), and the excitation electrode groups are respectively and correspondingly electrically connected with a first pin (31) and a second pin (32) on the horizontal shell (10) through the first surface electrode (71) and the second surface electrode (72).
2. The twisted mode quartz tuning fork temperature sensor according to claim 1, wherein the horizontal casing (10) comprises a tube cap (11) and a tube seat (12), the tube cap (11) and the tube seat (12) are both made of kovar alloy materials with tungsten copper layers sputtered on the inner and outer surfaces, a first glass powder insulator (33) and a second glass powder insulator (34) are hermetically arranged on the tube seat (12), the first pin (31) penetrates through the first glass powder insulator (33) in an airtight manner to form an integral structure, the second pin (32) penetrates through the second glass powder insulator (34) in an airtight manner to form an integral structure, the first pin (31) and the second pin (32) are both made of kovar alloy materials with nickel plating, and the tube cap (11) and the tube seat (12) are welded into a whole through energy storage welding or helium welding in a nitrogen atmosphere or a helium atmosphere to form an airtight packaging structure;
the horizontal shell (10) is filled with heat-conducting gas, the heat-conducting gas is helium or nitrogen, and the content of the heat-conducting gas is expressed by pressure to be 0.5-1.3kPa;
the surfaces of the tube cap (11), the tube seat (12), the first pin (31) and the second pin (32) are further electroplated with an absorption stress layer, and the surface of the absorption stress layer is further electroplated with a nickel metal layer; the absorbing stress layer is a copper layer or a silver layer, the thickness of the absorbing stress layer is 15 to 30 micrometers, and the thickness of the nickel metal layer is 0.8 to 10 micrometers.
3. The twisted mode quartz tuning fork temperature sensor according to claim 2, wherein a through hole (45) matched with the quartz stub (22) is arranged at the center of gravity of the common base region (40) of the thermal resonator body (21), and a solid solution (23) made of graphene carbon fiber-mullite ceramic powder-low-temperature glass powder is arranged between the inner wall of the through hole (45) and the quartz stub (22);
the cross section of the quartz short column (22) is rectangular, the long side direction of the rectangle is consistent with the mechanical axis direction of the quartz crystal, the short side direction of the rectangle is consistent with the optical axis direction of the quartz crystal, and the normal direction of the cross section is consistent with the electric axis direction of the quartz crystal;
the through hole (45) is a rectangular through hole, the thermosensitive resonator body (21) is consistent with the mechanical axis direction of the quartz crystal along the long side direction of the rectangular through hole, is consistent with the optical axis direction of the quartz crystal along the short side direction of the rectangular through hole, and is consistent with the electric axis direction of the quartz crystal along the depth direction of the rectangular through hole;
the quartz short column structure is characterized in that the first surface electrode (71) and the second surface electrode (72) are respectively formed on two side faces with the largest surface area of the quartz short column (22), one ends of the first surface electrode (71) and the second surface electrode (72) are respectively and electrically connected with corresponding excitation electrode groups, the other ends of the first surface electrode (71) and the second surface electrode (72) are respectively and correspondingly connected and fixed with the first pin (31) and the second pin (32) by using a welding method or a high-temperature conductive adhesive coating method, and the distance d between the lower surface of the quartz short column (22) and the inner bottom surface of the tube seat (12) meets the condition that d is more than or equal to 0.5mm.
4. The twisted mode quartz tuning fork temperature sensor of claim 3, wherein the thermally sensitive resonator body (21) comprises a total of eight first sub-prongs, namely a first prong (51), a second prong (52), a third prong (53), a fourth prong (54), a fifth prong (55), a sixth prong (56), a seventh prong (57), and an eighth prong (58), and four second sub-prongs, namely a first crossbar (61), a second crossbar (62), a third crossbar (63), and a fourth crossbar (64),
the first fork arm (51) and the third fork arm (53) extend out from the common base region (40) to one side along the optical axis direction of the quartz crystal, and the fifth fork arm (55) and the seventh fork arm (57) extend out from the common base region (40) to the other side along the optical axis direction of the quartz crystal;
the first fork arm (51) and the second fork arm (52) are connected into a whole through a first cross arm (61) to form 21274, the first combined fork arm is formed, the third fork arm (53) and the fourth fork arm (54) are connected into a whole through a second cross arm (62) to form 21274, the second combined fork arm is formed, the first combined fork arm and the second combined fork arm are arranged in an axial symmetry mode about the transverse center line of the common base region (40), the fifth fork arm (55) and the sixth fork arm (56) are connected into a whole through a third cross arm (63), the third combined fork arm is formed and is arranged in an axial symmetry mode with the first combined fork arm about the longitudinal center line of the common base region (40), and the seventh fork arm (57) and the eighth fork arm (58) are connected into a whole through a fourth cross arm (64), the fourth combined fork arm is formed and is arranged in an axial symmetry mode with the second combined fork arm about the longitudinal center line of the common base region (40);
the first combined fork arm, the second combined fork arm, the third combined fork arm and the fourth combined fork arm are all fork arms with one fixed end and the other free vibration form;
the torsional mode vibration of the first combined yoke and the torsional mode vibration of the fourth combined yoke are in phase; the torsional mode vibration of the second combination yoke and the torsional mode vibration of the third combination yoke are in phase; the torsional mode vibration of the first combined yoke and the torsional mode vibration of the second combined yoke are out of phase; the torsional mode vibration of the third combined yoke is out of phase with the torsional mode vibration of the fourth combined yoke.
5. The twisted mode quartz tuning fork temperature sensor according to claim 4, wherein two grooves are formed on two side edges of the common base region (40) in the mechanical axis direction, the grooves are respectively a first groove (41), a second groove (42), a third groove (43) and a fourth groove (44), the first groove (41), the third groove (43), the second groove (42) and the fourth groove (44) are respectively arranged in axial symmetry with respect to the transverse center line of the common base region (40), and the first groove (41), the second groove (42), the third groove (43) and the fourth groove (44) are respectively arranged in axial symmetry with respect to the longitudinal center line of the common base region (40).
6. The twisted mode quartz tuning fork temperature sensor according to claim 5, wherein the width direction of the rectangular through hole of the common base region (40) is consistent with the length direction of the common base region (40), the length direction of the rectangular through hole of the common base region (40) is consistent with the width direction of the common base region (40), and the vertical distance L1 between the symmetric center line of the rectangular through hole of the common base region (40) in the width direction and the symmetric center line of the common base region (40) in the length direction, namely the longitudinal center line, is less than or equal to 0.7L, wherein L is half of the length of the common base region (40); the vertical distance L2 between the longitudinal positioning center lines of the first groove (41) and the third groove (43) and the longitudinal positioning center lines of the second groove (42) and the fourth groove (44) and the longitudinal center line which is the symmetrical center line of the length direction of the public base region (40) is less than or equal to 0.6L, wherein L is half of the length of the public base region (40).
7. The twisted mode quartz tuning fork temperature sensor according to claim 6, wherein the first groove (41), the second groove (42), the third groove (43) and the fourth groove (44) are all non-transparent structures, that is, a residual wafer is further formed in each groove, the residual wafer is parallel to the upper surface and the lower surface of the common base region (40), the depth from the residual wafer to the upper surface and the lower surface of the common base region (40) is 0.25 to 0.33D, the thickness of the residual wafer is 0.34 to 0.5D, and D is the thickness of the common base region (40).
8. The twisted mode quartz tuning fork temperature sensor of claim 7, wherein the excitation electrode group comprises a first excitation electrode group and a second excitation electrode group, wherein,
the first excitation electrode group comprises a first excitation electrode (A1), a second excitation electrode (A2), a fifth excitation electrode (A5), a sixth excitation electrode (A6), a ninth excitation electrode (A9), a tenth excitation electrode (A10), a thirteenth excitation electrode (A13) and a fourteenth excitation electrode (A14) which are sequentially arranged on the upper surface of a fourth prong (54), a third prong (53), a first prong (51) and a second prong (52), and a third excitation electrode (A3), a fourth excitation electrode (A4), a seventh excitation electrode (A7), an eighth excitation electrode (A8), an eleventh excitation electrode (A11), a twelfth excitation electrode (A12), a fifteenth excitation electrode (A15) and a sixteenth excitation electrode (A16) which are arranged on the lower surface;
the second excitation electrode group comprises a first second excitation electrode (B1), a second excitation electrode (B2), a fifth second excitation electrode (B5), a sixth excitation electrode (B6), a ninth second excitation electrode (B9), a tenth second excitation electrode (B10), a thirteenth second excitation electrode (B13), a fourteenth second excitation electrode (B14) which are sequentially arranged on the upper surfaces of an eighth prong (58), a seventh prong (57), a fifth prong (55) and a sixth prong (56), and a third second excitation electrode (B3), a fourth second excitation electrode (B4), a seventh second excitation electrode (B7), an eighth second excitation electrode (B8), an eleventh second excitation electrode (B11), a twelfth second excitation electrode (B12), a fifteenth second excitation electrode (B15) and a sixteenth excitation electrode (B16) which are arranged on the lower surfaces;
the first excitation electrode II (A2), the first excitation electrode V (A5), the first excitation electrode ten (A10), the first excitation electrode thirteen (A13), the first excitation electrode III (A3), the first excitation electrode eight (A8), the first excitation electrode eleven (A11) and the first excitation electrode sixteen (A16) are in the same phase and are connected with a first connecting terminal (M); the first excitation electrode I (A1), the first excitation electrode six (A6), the first excitation electrode nine (A9), the first excitation electrode fourteen (A14), the first excitation electrode four (A4), the first excitation electrode seven (A7), the first excitation electrode twelve (A12) and the first excitation electrode fifteen (A15) are in the same phase, and are connected with a second connection terminal (N);
the second excitation electrode II (B2), the second excitation electrode V (B5), the second excitation electrode ten (B10), the second excitation electrode thirteen (B13), the second excitation electrode III (B3), the second excitation electrode eight (B8), the second excitation electrode eleven (B11) and the second excitation electrode sixteen (B16) are in the same phase and are connected with a second connecting terminal (N); the first second excitation electrode (B1), the sixth second excitation electrode (B6), the ninth second excitation electrode (B9), the fourteenth second excitation electrode (B14), the fourth second excitation electrode (B4), the seventh second excitation electrode (B7), the twelfth second excitation electrode (B12) and the fifteenth second excitation electrode (B15) are in the same phase and are connected with the first connecting terminal (M).
9. The twisted mode quartz tuning fork temperature sensor of claim 8, wherein each excitation electrode of the excitation electrode population, the first surface electrode (71) and the second surface electrode (72) on the quartz stub (22) are all four-layer gold film electrodes fabricated using a sputtering process, wherein,
the first layer is a strong adhesion layer, is positioned on the surface of a corresponding quartz crystal, is composed of a chromium-nickel alloy film, and has the thickness of 5 to 15nm;
the second layer is a stress absorption layer, is positioned on the strong-adhesion layer, is made of soft metal silver or copper, and has the thickness of 100 to 300nm;
the third layer is a diffusion stopping layer, is positioned on the stress absorption layer, is made of tantalum or hafnium metal, and has the thickness of 10 to 50nm;
the fourth layer is a conductive and lead bonding layer, is positioned on the diffusion barrier layer, is composed of an alloy film of silver-gold-rare earth element samarium, and is 150 to 800nm in thickness, wherein the content (relative atomic mass ratio) of gold is 0.5%, the content (relative atomic mass ratio) of rare earth element samarium is 0.3%, and the balance is silver metal.
10. The torsional mode quartz tuning fork temperature sensor according to claim 9, wherein the quartz short column (22) is cut by xzwt (19-35)/(70-90), the thermosensitive resonator body (21) is cut by xzwt (19-35)/(70-90), and is matched with the cut of the quartz short column (22), and the torsional mode quartz tuning fork thermosensitive resonator (20) is prepared by an optical cold processing technology, a wet chemical etching technology and a dry physical etching technology.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115855300A (en) * 2023-02-27 2023-03-28 常州奇军苑传感技术有限公司 Horizontal length extension mould quartz temperature sensor

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489510A1 (en) * 1980-08-29 1982-03-05 Asulab Sa QUARTZ THERMOMETER
US4574639A (en) * 1983-06-21 1986-03-11 Quartztronics, Inc. Pressure force measurement apparatus and method
CN201314848Y (en) * 2008-11-14 2009-09-23 哈尔滨龙成智能仪表公司 Resonance-type quartz-crystal temperature sensor
CN101551283A (en) * 2009-05-14 2009-10-07 上海交通大学 Surface transverse wave pressure and temperature sensor
CN106323511A (en) * 2016-08-05 2017-01-11 中国电子科技集团公司第四十九研究所 One-chip type quartz resonance pressure/temperature sensor and technological method therefor
CN109580030A (en) * 2019-01-10 2019-04-05 哈尔滨华凡传感技术有限公司 A kind of high-precision resonance type quartz crystal temperature sensor raised one's arm with more pieces of flechette-types
CN110902640A (en) * 2019-12-11 2020-03-24 合肥工业大学 High-sensitivity MEMS resonant temperature sensor chip
CN111238676A (en) * 2018-11-28 2020-06-05 哈尔滨天璇石英晶体传感技术有限公司 High-strength quick-response quartz temperature sensor adopting modified three-fork-arm tuning fork
CN114112184A (en) * 2021-11-21 2022-03-01 常州奇军苑电子科技有限公司 Surface bending mode double-coupling single-chip type high-sensitivity quartz tuning fork vacuum sensor
CN114421921A (en) * 2022-01-24 2022-04-29 常州奇军苑电子科技有限公司 Single-chip type surface bending mode double-coupling five-fork-arm quartz tuning fork vacuum sensitive resonator

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2489510A1 (en) * 1980-08-29 1982-03-05 Asulab Sa QUARTZ THERMOMETER
US4574639A (en) * 1983-06-21 1986-03-11 Quartztronics, Inc. Pressure force measurement apparatus and method
CN201314848Y (en) * 2008-11-14 2009-09-23 哈尔滨龙成智能仪表公司 Resonance-type quartz-crystal temperature sensor
CN101551283A (en) * 2009-05-14 2009-10-07 上海交通大学 Surface transverse wave pressure and temperature sensor
CN106323511A (en) * 2016-08-05 2017-01-11 中国电子科技集团公司第四十九研究所 One-chip type quartz resonance pressure/temperature sensor and technological method therefor
CN111238676A (en) * 2018-11-28 2020-06-05 哈尔滨天璇石英晶体传感技术有限公司 High-strength quick-response quartz temperature sensor adopting modified three-fork-arm tuning fork
CN109580030A (en) * 2019-01-10 2019-04-05 哈尔滨华凡传感技术有限公司 A kind of high-precision resonance type quartz crystal temperature sensor raised one's arm with more pieces of flechette-types
CN110902640A (en) * 2019-12-11 2020-03-24 合肥工业大学 High-sensitivity MEMS resonant temperature sensor chip
CN114112184A (en) * 2021-11-21 2022-03-01 常州奇军苑电子科技有限公司 Surface bending mode double-coupling single-chip type high-sensitivity quartz tuning fork vacuum sensor
CN114421921A (en) * 2022-01-24 2022-04-29 常州奇军苑电子科技有限公司 Single-chip type surface bending mode double-coupling five-fork-arm quartz tuning fork vacuum sensitive resonator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115855300A (en) * 2023-02-27 2023-03-28 常州奇军苑传感技术有限公司 Horizontal length extension mould quartz temperature sensor
CN115855300B (en) * 2023-02-27 2023-04-28 常州奇军苑传感技术有限公司 Quartz temperature sensor of horizontal length expansion die

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