CN115632642B - IGBT turn-off voltage spike suppression circuit and related equipment - Google Patents
IGBT turn-off voltage spike suppression circuit and related equipment Download PDFInfo
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- CN115632642B CN115632642B CN202211646619.0A CN202211646619A CN115632642B CN 115632642 B CN115632642 B CN 115632642B CN 202211646619 A CN202211646619 A CN 202211646619A CN 115632642 B CN115632642 B CN 115632642B
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- 230000002829 reductive effect Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
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- 238000010586 diagram Methods 0.000 description 8
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application discloses IGBT turn-off voltage spike suppression circuit and relevant equipment can be used to IGBT turn-off voltage spike suppression technical field, and this circuit includes: the device comprises a signal processing module, a resistance module, an Insulated Gate Bipolar Transistor (IGBT) and a voltage comparison module; the signal processing module, the resistance module, the insulated gate bipolar transistor IGBT and the voltage comparison module are connected in series. The circuit can provide different impedances aiming at different stages in the turn-off process of the insulated gate bipolar transistor IGBT and control the current falling speed of the collector of the insulated gate bipolar transistor IGBT, so that the turn-off speed of the insulated gate bipolar transistor IGBT is controlled, the effect of inhibiting the voltage spike in the turn-off process of the insulated gate bipolar transistor IGBT is achieved, the possibility that the IGBT is broken down by overvoltage due to the turn-off spike of the IGBT is reduced, and the reliability of the IGBT is improved.
Description
Technical Field
The application relates to the technical field of IGBT turn-off voltage spike suppression, in particular to an IGBT turn-off voltage spike suppression circuit and related equipment.
Background
With the continuous improvement of the industrial automation degree, frequency converters are widely used, and IGBTs (Insulated Gate Bipolar transistors) are also receiving more and more attention as core devices of the frequency converters.
In the turn-off process of the IGBT, stray inductance in a loop cannot be avoided, due to the existence of the stray inductance, induced voltage exists in the turn-off process of the IGBT, the induced voltage and bus voltage are mutually superposed to form a voltage peak and act between a collector and an emitter of the IGBT, and when the voltage peak exceeds a safe working area of a device, the application process of the device has failure risk due to overhigh electrical stress.
At present, a Transient Voltage Super (TVS) active clamping mode is often adopted to suppress the IGBT turn-off Voltage spike. However, the TVS has large loss and is difficult to select, and when the clamp voltage is not designed properly, the problems of misoperation, loss of clamping function, etc. may occur, and the IGBT turn-off voltage spike may not be effectively suppressed.
Therefore, how to provide a circuit capable of effectively suppressing the turn-off voltage spike of the IGBT and improve the reliability of the IGBT is a technical problem to be solved urgently at present.
Disclosure of Invention
Based on the problem, the application provides an IGBT turn-off voltage spike suppression circuit and relevant equipment, can effectively suppress IGBT turn-off voltage spike, improves IGBT's reliability.
The embodiment of the application discloses the following technical scheme:
in a first aspect, the present application provides an IGBT turn-off voltage spike suppression circuit, the circuit comprising: the device comprises a signal processing module, a resistance module, an Insulated Gate Bipolar Transistor (IGBT) and a voltage comparison module;
the signal processing module, the resistance module, the insulated gate bipolar transistor IGBT and the voltage comparison module are connected in series;
the signal processing module is used for controlling the resistance module to be connected to the impedance of the IGBT turn-off voltage spike suppression circuit based on the obtained turn-off signal; the turn-off signals comprise a first turn-off signal, a second turn-off signal and a third turn-off signal;
the voltage comparison module is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal.
Optionally, the resistance module includes: a first resistance unit and a second resistance unit;
the first end of the first resistance unit and the first end of the second resistance unit are connected with the signal processing module, and the second end of the first resistance unit and the second end of the second resistance unit are connected with the grid electrode of the Insulated Gate Bipolar Transistor (IGBT);
the first resistance unit is used for responding to the control of the signal processing module to switch in the IGBT turn-off voltage spike suppression circuit when the signal processing module receives the first turn-off signal or the third turn-off signal;
the second resistance unit is used for responding to the control of the signal processing module to access the IGBT turn-off voltage spike suppression circuit when the signal processing module receives the second turn-off signal or the third turn-off signal.
Optionally, the first resistance unit includes: a first resistor and a first switch;
the first end of the first switch is connected with the first end of the signal processing module, the second end of the first switch is connected with the first end of the first resistor, and the second end of the first resistor is connected with the grid electrode of the Insulated Gate Bipolar Transistor (IGBT).
Optionally, the second resistance unit includes: a second resistor and a second switch;
the first end of the second switch is connected with the second end of the signal processing module, the second end of the second switch is connected with the first end of the second resistor, and the second end of the second resistor is connected with the grid electrode of the insulated gate bipolar transistor IGBT.
Optionally, the impedance provided by the first resistance unit is smaller than the impedance provided by the second resistance unit.
Optionally, the voltage comparison module includes: the protection circuit comprises a voltage comparator, a voltage source and a protection unit;
the first input end of the voltage comparator is connected with the first end of the voltage source, the second end of the voltage source is grounded, the second input end of the voltage comparator is connected with the first end of the protection unit, and the second end of the protection unit is connected with the collector electrode of the insulated gate bipolar transistor IGBT;
the protection unit is used for protecting the voltage comparator;
the voltage source is used for providing a preset reference voltage;
the voltage comparator is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with the preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal.
Optionally, the protection unit includes: a current source and a diode;
the positive pole of the diode is connected with the first input end of the voltage comparator, the negative pole of the diode is connected with the collector electrode of the insulated gate bipolar transistor IGBT, and the current source is connected with the positive pole of the diode.
In a second aspect, the present application provides a frequency converter comprising the IGBT turn-off voltage spike suppression circuit according to any one of the first aspect.
Compared with the prior art, the method has the following beneficial effects:
the application provides IGBT turn-off voltage spike suppression circuit, this circuit includes: the device comprises a signal processing module, a resistance module, an Insulated Gate Bipolar Transistor (IGBT) and a voltage comparison module; the signal processing module, the resistance module, the insulated gate bipolar transistor IGBT and the voltage comparison module are connected in series; the signal processing module is used for controlling the resistance module to be connected to the impedance of the IGBT turn-off voltage spike suppression circuit based on the obtained turn-off signal; the turn-off signals comprise a first turn-off signal, a second turn-off signal and a third turn-off signal; the voltage comparison module is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal. Therefore, different impedances can be provided for different stages in the turn-off process of the insulated gate bipolar transistor IGBT, and the current falling speed of the collector of the insulated gate bipolar transistor IGBT is controlled, so that the turn-off speed of the insulated gate bipolar transistor IGBT is controlled, the effect of inhibiting the voltage spike in the turn-off process of the insulated gate bipolar transistor IGBT is achieved, the possibility that the IGBT is broken down by overvoltage due to the turn-off spike of the IGBT is reduced, and the reliability of the IGBT is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic diagram of an IGBT turn-off voltage spike suppression circuit provided in an embodiment of the present application;
fig. 2 is a schematic diagram of another IGBT turn-off voltage spike suppression circuit provided in the embodiment of the present application;
fig. 3 is a schematic diagram of another IGBT turn-off voltage spike suppression circuit provided in the embodiment of the present application;
fig. 4 is a schematic diagram of a further IGBT turn-off voltage spike suppression circuit provided in the embodiment of the present application.
Detailed Description
The embodiment of the application provides an IGBT turn-off voltage spike suppression circuit and related equipment, which can effectively suppress IGBT turn-off voltage spikes and improve the reliability of IGBT.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
Of course, the above-described terms are to be construed merely for convenience of understanding and are not to be construed in any limiting sense.
As described above, a Transient Voltage Suppressor (TVS) active clamp is often used to suppress the IGBT turn-off Voltage spike. However, the TVS has large loss and is difficult to select, and when the clamp voltage is not designed properly, the problems of misoperation, loss of clamping function, etc. may occur, and the IGBT turn-off voltage spike may not be effectively suppressed.
In view of this, the present application provides an IGBT turn-off voltage spike suppression circuit, including: the device comprises a signal processing module, a resistance module, an Insulated Gate Bipolar Transistor (IGBT) and a voltage comparison module; the signal processing module is used for controlling the resistance module to be connected to the impedance of the IGBT turn-off voltage spike suppression circuit based on the obtained turn-off signal; the turn-off signals comprise a first turn-off signal, a second turn-off signal and a third turn-off signal; the voltage comparison module is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal. Therefore, different impedances can be provided for different stages in the turn-off process of the insulated gate bipolar transistor IGBT, and the falling speed of the collector current of the insulated gate bipolar transistor IGBT is controlled, so that the effects of controlling the turn-off speed of the insulated gate bipolar transistor IGBT and inhibiting the voltage spike in the turn-off process of the insulated gate bipolar transistor IGBT are achieved.
In order to make those skilled in the art better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
Referring to fig. 1, the schematic diagram of an IGBT turn-off voltage spike suppression circuit provided in an embodiment of the present application, the circuit includes: the device comprises a signal processing module, a resistance module, an insulated gate bipolar transistor IGBT and a voltage comparison module.
The signal processing module, the resistance module, the insulated gate bipolar transistor IGBT and the voltage comparison module are connected in series.
Illustratively, the first end of the resistance module and the second end of the voltage comparison module are connected to the signal processing module, the second end of the resistance module is connected to the gate of the insulated gate bipolar transistor IGBT, and the collector of the insulated gate bipolar transistor IGBT is connected to the first end of the voltage comparison module.
And the signal processing module is used for controlling the resistance module to be connected into the impedance of the IGBT turn-off voltage spike suppression circuit based on the acquired turn-off signal.
Illustratively, the turn-off signal may include a first turn-off signal, a second turn-off signal, and a third turn-off signal. The first turn-off signal may be a signal that a Pulse Width Modulation (PWM) signal input to the signal processing module by the processor changes from a high level to a low level, and is used to instruct to start to turn off the IGBT, and at this time, the impedance that the resistance module is connected to the IGBT turn-off voltage spike suppression circuit may be controlled to be a first impedance; the second turn-off signal can be triggered by a trigger signal input by the voltage comparison module, and at the moment, the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than a preset reference voltage, so that the impedance of the resistor module connected to the IGBT turn-off voltage spike suppression circuit can be controlled to be a second impedance; the third turn-off signal can be automatically triggered after a certain time passes after the second turn-off signal is triggered, at this time, the IGBT turn-off voltage spike can be considered to be ended, and the impedance of the resistance module connected to the IGBT turn-off voltage spike suppression circuit can be controlled to be third impedance.
And the voltage comparison module is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and inputting a trigger signal to the signal processing module if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage.
Illustratively, the trigger signal is used to trigger the second turn-off signal. After the first impedance is connected to the IGBT turn-off voltage spike suppression circuit, the voltage VCE between the emitter and the collector of the insulated gate bipolar transistor IGBT starts to rise. A reference voltage VCE _ REF may be preset in the voltage comparison module, and for example, VCE _ REF may be set as a bus voltage, or may be set according to actual requirements.
In the turn-off process of the IGBT, the grid electrode of the IGBT is reduced from positive voltage to 0 or negative voltage, at the moment, a conducting channel in a device slowly disappears, the current of the grid electrode is gradually reduced, the voltage VCE between an emitter electrode and a collector electrode is continuously increased and then reduced within a period of time to form a voltage spike, the size of the voltage spike is related to the reduction rate of the current, and the reduction rate of the current is mainly related to the turn-off speed. In order to avoid that the turn-off speed is too high due to the fact that the first impedance is small, and then the VCE is too large to cause the insulated gate bipolar transistor IGBT to be broken down by overvoltage, when the voltage comparison module detects that the VCE is larger than VCE _ REF, the voltage detection module inputs a trigger signal to the signal processing module, the trigger signal is used for triggering a second turn-off signal, the trigger second turn-off signal can control the resistance module to be connected to the impedance of the IGBT turn-off voltage spike suppression circuit to be second impedance, and the second impedance can be larger than the first impedance, so that the turn-off speed of the IGBT can be reduced.
As an example, a preset time length may be preconfigured in the signal processing module, timing is started when the signal processing module obtains the second turn-off signal or controls the resistance module to access the impedance of the IGBT turn-off voltage spike suppression circuit as the second impedance, and after the preset time length, the resistance module may be controlled to access the impedance of the IGBT turn-off voltage spike suppression circuit as the third impedance. Wherein the third impedance may be less than the second impedance, and the predetermined duration may be greater than or equal to the predicted duration of the voltage spike.
Therefore, the IGBT turn-off voltage spike suppression circuit can provide different impedances aiming at different stages in the turn-off process of the insulated gate bipolar transistor IGBT, and control the collector current falling speed of the insulated gate bipolar transistor IGBT, so that the turn-off speed of the insulated gate bipolar transistor IGBT is controlled, the voltage spike in the turn-off process of the insulated gate bipolar transistor IGBT is suppressed, the possibility that the IGBT is broken down by overvoltage due to the IGBT turn-off spike is reduced, and the reliability of the IGBT is improved.
Referring to fig. 2, which is a schematic diagram of another IGBT turn-off voltage spike suppression circuit provided in an embodiment of the present application, in the circuit, the resistance module may include a first resistance unit and a second resistance unit, and the voltage comparison module may include a voltage comparator, a voltage source, and a protection unit.
The first end of the first resistance unit and the first end of the second resistance unit are connected with the signal processing module, and the second end of the first resistance unit and the second end of the second resistance unit are connected with the grid electrode of the insulated gate bipolar transistor IGBT; the first input end of the voltage comparator is connected with the first end of a voltage source, the second end of the voltage source is grounded, the second input end of the voltage comparator is connected with the first end of the protection unit, and the second end of the protection unit is connected with the collector electrode of the insulated gate bipolar transistor IGBT.
Illustratively, the first resistance unit is used for switching in the IGBT turn-off voltage spike suppression circuit in response to the control of the signal processing module when the signal processing module receives the first turn-off signal or the third turn-off signal; and the second resistance unit is used for responding to the control of the signal processing module and switching in the IGBT turn-off voltage spike suppression circuit when the signal processing module receives the second turn-off signal or the third turn-off signal.
Specifically, the first resistance unit may include a first resistor R1 and a first switch Q1, a first end of the first switch is connected to a first end of the signal processing module, a second end of the first switch is connected to a first end of the first resistor, and a second end of the first resistor is connected to a gate of the insulated gate bipolar transistor IGBT. The second resistance unit may include a second resistor R2 and a second switch Q2, a first end of the second switch is connected to the second end of the signal processing module, a second end of the second switch is connected to the first end of the second resistor, and a second end of the second resistor is connected to the gate of the insulated gate bipolar transistor IGBT.
When the signal processing module acquires a first turn-off signal, controlling a first resistor to be connected into an IGBT turn-off voltage spike suppression circuit to provide first impedance; when the signal processing module acquires a second turn-off signal, controlling a second resistor to be connected into the IGBT turn-off voltage spike suppression circuit to provide second impedance, wherein the second impedance is larger than the first impedance; when the signal processing module acquires a third off signal, the first resistor and the second resistor are controlled to be simultaneously connected to the IGBT off-voltage spike suppression circuit, the first resistor and the second resistor are connected in parallel to provide third impedance, and the third impedance is smaller than the second impedance.
Optionally, the first switch may be a MOS transistor or a transistor, and the second switch may be a MOS transistor or a transistor. Therefore, the signal processing module can enable the first resistor to be connected to the IGBT turn-off voltage spike suppression circuit by pulling up the gate electrode control signal GQ1 of the first switch Q1; the gate control signal GQ2 of the second switch Q2 is pulled high, so that the second resistor is connected to the IGBT turn-off voltage spike suppression circuit; under the condition that the second resistor is connected with the IGBT turn-off voltage spike suppression circuit, the gate control signal GQ1 of the first switch Q1 is pulled high again, so that the first resistor and the second resistor are connected with the IGBT turn-off voltage spike suppression circuit at the same time.
Exemplarily, the protection unit is used for protecting the voltage comparator; a voltage source DC for providing a preset reference voltage; the voltage comparator U1 is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and inputting a trigger signal to the signal processing module if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage; the trigger signal is used for triggering the second turn-off signal.
Referring to fig. 3, which is a schematic diagram of another IGBT turn-off voltage spike suppression circuit provided in the embodiment of the present application, in the circuit, the protection unit may include: current source iS1 and diode D1.
The positive pole of the diode is connected with the first input end of the voltage comparator, the negative pole of the diode is connected with the collector electrode of the insulated gate bipolar transistor IGBT, and the current source is connected with the positive pole of the diode.
Specifically, since HV + and HV-are high voltage, it is assumed that the voltage difference between HV + and HV-is 1000V; and two insulated gate bipolar transistors IGBT are turned on in turn in the figure, namely Q3 and Q4 are turned on in turn. When the Q4 is conducted and the Q3 is cut off, the voltage of the VCE of the Q3 is 1000V, so that the diode D1 can play a role of blocking high voltage and protect the voltage comparator U1 from being broken down by high voltage; when Q4 is turned off and Q3 is turned on, the VCE voltage of Q3 is a saturation voltage drop VCE _ sat, and the input voltage VCE _ DE of the voltage comparator is the sum of the VCE voltages VCE _ sat of the diode voltage drops VF _ D1 and Q3, so that the VCE voltage of Q3 can be detected in the turn-off process of Q3.
Referring to fig. 4, this figure is a schematic diagram of a further IGBT turn-off voltage spike suppression circuit provided in the embodiment of the present application, in this circuit, the protection unit may include: and (4) protecting the resistor.
Specifically, the protection resistor may include a first protection resistor R3 and a second protection resistor R4, where R3 is connected in series with R4 and then connected in parallel with Q3. The principle of its protective action can be referred to in particular the principle of the protective action of the diode described above.
The application also provides a frequency converter, which comprises the IGBT turn-off voltage spike suppression circuit.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiment of the frequency converter, since it is basically similar to the method embodiment, the description is simple, and for relevant points, refer to the partial description of the method embodiment. The above described embodiment of the frequency converter is only an exemplary one, wherein the units illustrated as separate components may or may not be physically separate, and the components indicated as units may or may not be physical units, that is, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
The above description is only one specific embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (6)
1. An IGBT turn-off voltage spike suppression circuit, the circuit comprising: the device comprises a signal processing module, a resistance module, an Insulated Gate Bipolar Transistor (IGBT) and a voltage comparison module;
the signal processing module, the resistance module, the insulated gate bipolar transistor IGBT and the voltage comparison module are connected in series;
the signal processing module is used for controlling the resistance module to be connected to the impedance of the IGBT turn-off voltage spike suppression circuit based on the obtained turn-off signal; the turn-off signals comprise a first turn-off signal, a second turn-off signal and a third turn-off signal; when the second turn-off signal is acquired, the signal processing module starts timing, and when the timing duration is equal to a preset duration, the third turn-off signal is triggered; the preset time length is greater than or equal to the voltage spike duration in the turn-off process of the insulated gate bipolar transistor IGBT;
the voltage comparison module is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with a preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is larger than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal;
the resistance module includes: a first resistance unit and a second resistance unit; the first end of the first resistance unit and the first end of the second resistance unit are connected with the signal processing module, and the second end of the first resistance unit and the second end of the second resistance unit are connected with the grid electrode of the Insulated Gate Bipolar Transistor (IGBT);
the first resistance unit is used for responding to the control of the signal processing module to switch in the IGBT turn-off voltage spike suppression circuit when the signal processing module receives the first turn-off signal or the third turn-off signal;
the second resistance unit is used for responding to the control of the signal processing module to switch in the IGBT turn-off voltage spike suppression circuit when the signal processing module receives the second turn-off signal or the third turn-off signal;
the impedance provided by the first resistance unit is smaller than the impedance provided by the second resistance unit.
2. The circuit of claim 1, wherein the first resistance unit comprises: a first resistor and a first switch;
the first end of the first switch is connected with the first end of the signal processing module, the second end of the first switch is connected with the first end of the first resistor, and the second end of the first resistor is connected with the grid electrode of the insulated gate bipolar transistor IGBT.
3. The circuit of claim 1, wherein the second resistance unit comprises: a second resistor and a second switch;
the first end of the second switch is connected with the second end of the signal processing module, the second end of the second switch is connected with the first end of the second resistor, and the second end of the second resistor is connected with the grid electrode of the insulated gate bipolar transistor IGBT.
4. The circuit of claim 1, wherein the voltage comparison module comprises: the protection circuit comprises a voltage comparator, a voltage source and a protection unit;
the first input end of the voltage comparator is connected with the first end of the voltage source, the second end of the voltage source is grounded, the second input end of the voltage comparator is connected with the first end of the protection unit, and the second end of the protection unit is connected with the collector electrode of the insulated gate bipolar transistor IGBT;
the protection unit is used for protecting the voltage comparator;
the voltage source is used for providing a preset reference voltage;
the voltage comparator is used for comparing the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT with the preset reference voltage, and if the voltage between the emitter and the collector of the insulated gate bipolar transistor IGBT is greater than the preset reference voltage, a trigger signal is input to the signal processing module; the trigger signal is used for triggering the second turn-off signal.
5. The circuit of claim 4, wherein the protection unit comprises: a current source and a diode;
the positive pole of the diode is connected with the first input end of the voltage comparator, the negative pole of the diode is connected with the collector electrode of the insulated gate bipolar transistor IGBT, and the current source is connected with the positive pole of the diode.
6. A frequency converter, characterized in that it comprises the IGBT turn-off voltage spike suppression circuit of any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN115632642A (en) | 2023-01-20 |
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