CN115631947A - Capacitor manufacturing method and capacitor - Google Patents

Abstract

The invention relates to a capacitor preparation method and a capacitor, and relates to the field of capacitors, wherein the method comprises the following steps: respectively depositing conductive electrodes on the upper surface and the lower surface of the insulating substrate; obtaining a second conductive electrode on the upper surface of the insulating substrate and a third conductive electrode on the lower surface of the insulating substrate; respectively depositing a first insulating medium layer and a second insulating medium layer on the upper surface and the lower surface of the insulating substrate subjected to the second conductive electrode and the third conductive electrode; respectively obtaining a first conductive electrode on the first insulating medium and a fourth conductive electrode on the second insulating medium layer; covering a first thin film layer on the first conductive electrode, and covering a second thin film layer on the fourth conductive electrode to obtain a capacitor with a preliminary structure; the first terminal electrode and the second terminal electrode are respectively covered at both ends of the capacitor of the preliminary structure. The invention reduces the difficulty of capacitor preparation.

Description

Capacitor manufacturing method and capacitor

Technical Field

The invention relates to the technical field of capacitors, in particular to a capacitor manufacturing method and a capacitor.

Background

Dielectric materials such as ceramics, etc., which are commonly used in conventional ceramic dielectric capacitors, are brittle materials that are easily damaged by mechanical stress, and the thinner the ceramic layer, the weaker it is. In addition, with the development of technology, high-density mounting of electronic components is also advancing, and therefore, the size requirement for capacitors is also shrinking, resulting in an increase in the difficulty of capacitor manufacturing work.

Disclosure of Invention

The invention aims to provide a capacitor manufacturing method and a capacitor, and the manufacturing difficulty is reduced.

In order to achieve the purpose, the invention provides the following scheme:

a method of making a capacitor, comprising:

grinding the insulating substrate to a set thickness and polishing to obtain a processed insulating substrate;

respectively depositing conductive electrodes on the upper surface and the lower surface of the insulating substrate;

etching the conductive electrode deposited on the upper surface of the insulating substrate and the conductive electrode deposited on the lower surface of the insulating substrate to respectively obtain a second conductive electrode on the upper surface of the insulating substrate and a third conductive electrode on the lower surface of the insulating substrate;

depositing a first insulating medium layer and a second insulating medium layer on the upper surface and the lower surface of the insulating substrate subjected to the etching of the second conductive electrode and the third conductive electrode respectively;

etching the conductive electrode deposited on the first insulating medium layer and the conductive electrode deposited on the second insulating medium layer to respectively obtain a first conductive electrode on the first insulating medium layer and a fourth conductive electrode on the second insulating medium layer;

covering a first thin film layer on the first conductive electrode, and covering a second thin film layer on the fourth conductive electrode to obtain a capacitor with a preliminary structure;

covering a first terminal electrode at one end of the capacitor of the preliminary structure and covering a second terminal electrode at the other end of the capacitor of the preliminary structure; the first end electrode is respectively connected with the first conductive electrode and the fourth conductive electrode, the second end electrode is respectively connected with the second conductive electrode and the third conductive electrode, or the first end electrode is respectively connected with the first conductive electrode and the third conductive electrode, and the second end electrode is respectively connected with the second conductive electrode and the fourth conductive electrode.

Optionally, when the first terminal electrode is connected to the first conductive electrode and the fourth conductive electrode, and the second terminal electrode is connected to the second conductive electrode and the third conductive electrode, the distances between the first terminal electrode and the second conductive electrode and between the first terminal electrode and the fourth conductive electrode are both 60 μm, and the distances between the second terminal electrode and the first conductive electrode and between the second terminal electrode and the fourth conductive electrode are both 60 μm.

Optionally, the material of the insulating substrate is photosensitive glass, strontium titanate, aluminum nitride or silicon carbide.

Optionally, the material of the first thin film layer and the second thin film layer is polyimide.

Optionally, the first insulating dielectric layer and the second insulating dielectric layer are made of silicon oxide, silicon nitride, aluminum nitride, or aluminum oxide.

Optionally, the set thickness is 250 μm.

Optionally, the thickness of the first insulating dielectric layer and the second insulating dielectric layer is 100nm.

The invention also discloses a capacitor, which is prepared by the capacitor preparation method and comprises the following steps: the capacitor comprises a first thin film layer, a first conductive electrode, a first insulating medium layer, a second conductive electrode, an insulating substrate, a third conductive electrode, a second insulating medium layer, a fourth conductive electrode and a second thin film layer which are sequentially stacked from top to bottom, and further comprises a first end electrode and a second end electrode;

when the first end electrode is connected with the first conductive electrode and the fourth conductive electrode respectively, and the second end electrode is connected with the second conductive electrode and the third conductive electrode respectively, the first conductive electrode, the first insulating medium layer and the second conductive electrode form a first capacitor, the third conductive electrode, the second insulating medium layer and the fourth conductive electrode form a second capacitor, and the first capacitor is connected with the second capacitor in parallel;

when the first end electrode is connected with the first conductive electrode and the third conductive electrode respectively, and the second end electrode is connected with the second conductive electrode and the fourth conductive electrode respectively, the second conductive electrode, the insulating substrate and the third conductive electrode form a third capacitor, the first conductive electrode, the first insulating medium layer and the second conductive electrode form a fourth capacitor, the third conductive electrode, the second insulating medium layer and the fourth conductive electrode form a fifth capacitor, and the third capacitor, the fourth capacitor and the fifth capacitor are connected in parallel.

According to the specific embodiment provided by the invention, the invention discloses the following technical effects:

according to the invention, the conductive electrodes and the insulating dielectric layers are respectively deposited on the two sides of the insulating substrate, so that the preparation process is simplified, the preparation difficulty of the capacitor is reduced, and the method is suitable for large-scale batch production of the capacitor.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

FIG. 1 is a first schematic flow chart of a method for manufacturing a capacitor according to the present invention;

FIG. 2 is a schematic flow chart of a capacitor manufacturing method according to the present invention;

FIG. 3 is a schematic diagram of a capacitor structure according to the first embodiment of the present invention;

FIG. 4 is a schematic diagram of a capacitor structure according to the present invention;

description of the symbols:

1-a first thin film layer, 2-a first conductive electrode, 3-a first insulating dielectric layer, 4-a second conductive electrode, 5-an insulating substrate, 6-a third conductive electrode, 7-a second insulating dielectric layer, 8-a fourth conductive electrode, 9-a second thin film layer, 10-a first terminal electrode, 11-a second terminal electrode.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention aims to provide a capacitor manufacturing method and a capacitor, and the manufacturing difficulty is reduced.

In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description thereof.

Example 1

FIG. 1 is a schematic flow chart of a method for manufacturing a capacitor according to the present invention; FIG. 2 is a second schematic flow chart of a method for manufacturing a capacitor according to the present invention; as shown in fig. 1-2, a method for manufacturing a capacitor includes:

step 101: and grinding the insulating substrate to a set thickness and polishing to obtain the processed insulating substrate.

Step 102: and respectively depositing conductive electrodes on the upper surface and the lower surface of the insulating substrate.

Step 103: and etching the conductive electrode deposited on the upper surface of the insulating substrate and the conductive electrode deposited on the lower surface of the insulating substrate to respectively obtain a second conductive electrode on the upper surface of the insulating substrate and a third conductive electrode on the lower surface of the insulating substrate.

Step 104: and respectively depositing a first insulating medium layer and a second insulating medium layer on the upper surface and the lower surface of the insulating substrate after the second conductive electrode and the third conductive electrode are etched.

Step 105: and etching the conductive electrode deposited on the first insulating medium layer and the conductive electrode deposited on the second insulating medium layer to respectively obtain a first conductive electrode on the first insulating medium layer and a fourth conductive electrode on the second insulating medium layer.

Step 106: and covering a first thin film layer on the first conductive electrode, and covering a second thin film layer on the fourth conductive electrode to obtain the capacitor with the preliminary structure.

Step 107: covering a first terminal electrode at one end of the capacitor of the preliminary structure and covering a second terminal electrode at the other end of the capacitor of the preliminary structure; the first end electrode is respectively connected with the first conductive electrode and the fourth conductive electrode, the second end electrode is respectively connected with the second conductive electrode and the third conductive electrode, or the first end electrode is respectively connected with the first conductive electrode and the third conductive electrode, and the second end electrode is respectively connected with the second conductive electrode and the fourth conductive electrode.

When the first terminal electrode is connected to the first conductive electrode and the fourth conductive electrode, and the second terminal electrode is connected to the second conductive electrode and the third conductive electrode, the distances between the first terminal electrode 10 and the second conductive electrode 4 and between the first terminal electrode 11 and the first conductive electrode 2 and between the second terminal electrode 11 and the fourth conductive electrode 8 are both 60 μm.

When the first terminal electrode is connected to the first conductive electrode and the third conductive electrode, the second terminal electrode is connected to the second conductive electrode and the fourth conductive electrode, the distances between the first terminal electrode 10 and the first conductive electrode 2 and between the first terminal electrode 11 and the second conductive electrode 4 and between the second terminal electrode 11 and the fourth conductive electrode 8 are both 60 μm.

The insulating substrate 5 is made of photosensitive glass, strontium titanate, aluminum nitride or silicon carbide ceramic or single crystal material.

The first thin film layer 1 and the second thin film layer 9 are made of polyimide.

The first insulating medium layer 3 and the second insulating medium layer 7 are made of silicon oxide, silicon nitride, aluminum nitride or aluminum oxide.

The thickness of the insulating substrate 5 is 250 μm.

The thickness of the first insulating medium layer 3 and the second insulating medium layer 7 is 100nm.

The material of the first terminal electrode 10 and the second terminal electrode 11 is an alloy composed of one or more of conductive materials such as Ag, pd, cu, ni, au, al, cr, and the like.

The insulating dielectric layers (the first insulating dielectric Layer 3 and the second insulating dielectric Layer 7) can be prepared by Physical Vapor Deposition (PVD), atomic Layer Deposition (ALD), chemical Vapor Deposition (CVD), and the like.

Example 2

A method for manufacturing a capacitor includes the following steps.

S201: the insulating substrate 5 is selected from photosensitive glass and used as a substrate or support carrier of the capacitor, as shown in fig. 2.

S202: grinding and thinning the photosensitive glass to 250 mu m, polishing to reduce the surface roughness of the photosensitive glass, and then cleaning by using chemical liquid medicine.

S203: ti (titanium) metal is respectively deposited on two surfaces of the photosensitive glass to prepare the conductive electrodes.

S204: and respectively spin-coating a layer of photoresist on two surfaces of photosensitive glass with the conductive electrodes, then exposing and developing under a mask plate with an electrode array pattern, and exposing the conductive electrodes which are 60 micrometers away from the edges of the insulating substrate 5 at the same ends of the two surfaces of the photosensitive glass.

S205: and etching the conductive electrodes exposed from the two sides of the photosensitive glass to obtain a first conductive electrode group (a second conductive electrode 4 and a third conductive electrode 6) which are conductive in the same direction, and finally cleaning and drying the etched photosensitive glass.

S206: 100nm silicon oxide insulating dielectric layers (a first insulating dielectric layer 3 and a second insulating dielectric layer 7) were Chemically Vapor Deposited (CVD) on the surface of a photosensitive glass with a set of co-directional conducting electrodes.

S207: and respectively depositing Ti on the two sides of the photosensitive glass deposited with the insulating medium layers to prepare the conductive electrodes.

S208: respectively spin-coating a layer of photoresist on two surfaces of photosensitive glass with a conductive electrode, then exposing and developing under a mask plate with an electrode array pattern, exposing the conductive electrode 60 mu m away from the edge of the insulating substrate 5 at the same end of the two surfaces of the photosensitive glass 1, and enabling the exposed conductive electrode to be opposite to the first time.

S209: and etching the conductive electrodes exposed from the two surfaces of the photosensitive glass to obtain another second conductive electrode group (the first conductive electrode 2 and the fourth conductive electrode 8) which is conductive in the same direction, and finally cleaning and drying the etched dielectric insulating substrate 5.

S2010: PI (polyimide) films (a first film layer 1 and a second film layer 9) are respectively prepared on two sides of the photosensitive glass which is prepared by the conductive electrode and the dielectric layer.

S2011: and cutting the capacitor with the preliminary structure to obtain a single capacitor structure.

S2012: the shorter two ends of the capacitor are respectively covered with a right end electrode (a second end electrode 11) and a left end electrode (a first end electrode 10), wherein the first conductive electrode 2 group is connected with the right end electrode, and the second conductive electrode 4 group is connected with the left end electrode.

Example 3

S301: the insulating substrate 5 is made of photosensitive glass and used as a substrate and a dielectric material of the capacitor;

s302: grinding and thinning the photosensitive glass to 250 mu m, polishing to reduce the surface roughness of the photosensitive glass, and then cleaning by using chemical liquid medicine;

s303: respectively depositing Ti metal on two surfaces of the photosensitive glass to prepare conductive electrodes;

s304: respectively spin-coating a layer of photoresist on two sides of photosensitive glass with conductive electrodes, then exposing and developing under a mask plate with electrode array patterns, and exposing the conductive electrodes which are 60 micrometers away from the edges of the insulating substrate 5 at the opposite ends of the two sides of the photosensitive glass;

s305: etching the conductive electrodes exposed from the opposite ends of the two surfaces of the photosensitive glass to obtain a first conductive electrode group (a second conductive electrode 4 and a third conductive electrode 6) conducting reversely, and finally cleaning and drying the etched photosensitive glass;

s306: depositing 100nm silicon oxide insulating medium layers (a first insulating medium layer 3 and a second insulating medium layer 7) on the surface of the photosensitive glass with the reverse conducting electrode group by means of CVD;

s307: respectively depositing Ti on two sides of the photosensitive glass deposited with the insulating medium layers to prepare conductive electrodes;

s308: respectively spin-coating a layer of photoresist on two surfaces of photosensitive glass with a conductive electrode, then exposing and developing under a mask plate with an electrode array pattern, exposing the conductive electrode 60 mu m away from the edge of the insulating substrate 5 at the opposite end of the two surfaces of the photosensitive glass, wherein the exposed conductive electrode is opposite to the first conductive electrode;

s309: etching the conductive electrodes exposed from the two surfaces of the photosensitive glass to obtain another second conductive electrode group (the first conductive electrode 2 and the fourth conductive electrode 8) conducting reversely, and finally cleaning and drying the etched dielectric insulating substrate 5;

s3010: respectively preparing PI (polyimide) films (a first film layer 1 and a second film layer 9) on two sides of photosensitive glass which is prepared by the conductive electrode and the dielectric layer;

s3011: cutting the capacitor with the primary structure to obtain a single capacitor structure;

s3012: the shorter two ends of the capacitor are respectively covered with a right end electrode 6 and a left end electrode 7.

Example 4

The capacitor of the present invention is prepared by the capacitor preparation method disclosed in embodiment 1, fig. 3 is a schematic view of a capacitor structure of the present invention, and as shown in fig. 3, a capacitor includes: the capacitor comprises a first thin film layer 1, a first conductive electrode 2, a first insulating medium layer 3, a second conductive electrode 4, an insulating substrate 5, a third conductive electrode 6, a second insulating medium layer 7, a fourth conductive electrode 8 and a second thin film layer 9 which are sequentially stacked from top to bottom, and further comprises a first end electrode 10 and a second end electrode 11.

The first terminal electrode 10 is connected to the first conductive electrode 2 and the fourth conductive electrode 8, respectively, and the second terminal electrode 11 is connected to the second conductive electrode 4 and the third conductive electrode 6, respectively. The second conductive electrode 4 and the third conductive electrode 6 are homodromous electrodes, the first conductive electrode 2, the first insulating medium layer 3 and the second conductive electrode 4 form a first capacitor, the third conductive electrode 6, the second insulating medium layer 7 and the fourth conductive electrode 8 form a second capacitor, and the first capacitor is connected with the second capacitor in parallel.

Example 5

The capacitor of the present invention is prepared by the capacitor preparation method disclosed in embodiment 1, fig. 4 is a schematic structural diagram of a capacitor of the present invention, and as shown in fig. 4, a capacitor includes: the capacitor comprises a first thin film layer 1, a first conductive electrode 2, a first insulating medium layer 3, a second conductive electrode 4, an insulating substrate 5, a third conductive electrode 6, a second insulating medium layer 7, a fourth conductive electrode 8 and a second thin film layer 9 which are sequentially stacked from top to bottom, and further comprises a first end electrode 10 and a second end electrode 11.

The first terminal electrode 10 is connected to the first conductive electrode 2 and the third conductive electrode 6, respectively, and the second terminal electrode 11 is connected to the second conductive electrode 4 and the fourth conductive electrode 8, respectively.

The second conductive electrode 4 and the third conductive electrode 6 are opposite electrodes, the second conductive electrode 4, the insulating substrate 5 and the third conductive electrode 6 form a third capacitor, the first conductive electrode 2, the first insulating medium layer 3 and the second conductive electrode 4 form a fourth capacitor, the third conductive electrode 6, the second insulating medium layer 7 and the fourth conductive electrode 8 form a fifth capacitor, and the third capacitor, the fourth capacitor and the fifth capacitor are connected in parallel.

According to the invention, the conductive electrodes and the insulating dielectric layers are respectively deposited on the two sides of the insulating substrate, so that the preparation process is simplified, the preparation difficulty of the capacitor is reduced, and the method is suitable for large-scale batch production of the capacitor. Provides a new design idea and material selection direction for the preparation of the capacitor.

The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the description of the method part.

The principle and the implementation of the present invention are explained herein by applying specific examples, and the above description of the embodiments is only used to help understand the method, the apparatus and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (8)

1. A method of making a capacitor, comprising:

grinding the insulating substrate to a set thickness and polishing to obtain a processed insulating substrate;

respectively depositing conductive electrodes on the upper surface and the lower surface of the insulating substrate;

etching the conductive electrode deposited on the upper surface of the insulating substrate and the conductive electrode deposited on the lower surface of the insulating substrate to respectively obtain a second conductive electrode on the upper surface of the insulating substrate and a third conductive electrode on the lower surface of the insulating substrate;

depositing a first insulating medium layer and a second insulating medium layer on the upper surface and the lower surface of the insulating substrate subjected to the etching of the second conductive electrode and the third conductive electrode respectively;

etching the conductive electrode deposited on the first insulating medium layer and the conductive electrode deposited on the second insulating medium layer to respectively obtain a first conductive electrode on the first insulating medium layer and a fourth conductive electrode on the second insulating medium layer;

covering a first thin film layer on the first conductive electrode, and covering a second thin film layer on the fourth conductive electrode to obtain a capacitor with a preliminary structure;

covering a first terminal electrode at one end of the capacitor of the preliminary structure and covering a second terminal electrode at the other end of the capacitor of the preliminary structure; the first terminal electrode is connected with the first conductive electrode and the fourth conductive electrode, the second terminal electrode is connected with the second conductive electrode and the third conductive electrode, or the first terminal electrode is connected with the first conductive electrode and the third conductive electrode, and the second terminal electrode is connected with the second conductive electrode and the fourth conductive electrode.

2. The method for producing a capacitor as claimed in claim 1, wherein when the first terminal electrode is connected to the first conductive electrode and the fourth conductive electrode, respectively, and the second terminal electrode is connected to the second conductive electrode and the third conductive electrode, respectively, the first terminal electrode is 60 μm apart from the second conductive electrode and the third conductive electrode, and the second terminal electrode is 60 μm apart from the first conductive electrode and the fourth conductive electrode.

3. The method of claim 1, wherein the insulating substrate is made of photosensitive glass, strontium titanate, aluminum nitride, or silicon carbide.

4. The method of claim 1, wherein the material of the first thin film layer and the second thin film layer is polyimide.

5. The method for manufacturing a capacitor according to claim 1, wherein the material of the first insulating dielectric layer and the second insulating dielectric layer is silicon oxide, silicon nitride, aluminum nitride or aluminum oxide.

6. The method for producing a capacitor as claimed in claim 1, wherein the set thickness is 250 μm.

7. The method of claim 1, wherein the thickness of the first dielectric layer and the second dielectric layer is 100nm.

8. A capacitor produced by the capacitor production method according to claims 1 to 7, comprising: the capacitor comprises a first thin film layer, a first conductive electrode, a first insulating medium layer, a second conductive electrode, an insulating substrate, a third conductive electrode, a second insulating medium layer, a fourth conductive electrode and a second thin film layer which are sequentially stacked from top to bottom, and further comprises a first end electrode and a second end electrode;

when the first end electrode is connected with the first conductive electrode and the fourth conductive electrode respectively, and the second end electrode is connected with the second conductive electrode and the third conductive electrode respectively, the first conductive electrode, the first insulating medium layer and the second conductive electrode form a first capacitor, the third conductive electrode, the second insulating medium layer and the fourth conductive electrode form a second capacitor, and the first capacitor and the second capacitor are connected in parallel;

when the first end electrode is connected with the first conductive electrode and the third conductive electrode respectively, and the second end electrode is connected with the second conductive electrode and the fourth conductive electrode respectively, the second conductive electrode, the insulating substrate and the third conductive electrode form a third capacitor, the first conductive electrode, the first insulating medium layer and the second conductive electrode form a fourth capacitor, the third conductive electrode, the second insulating medium layer and the fourth conductive electrode form a fifth capacitor, and the third capacitor, the fourth capacitor and the fifth capacitor are connected in parallel.

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