CN115604897A - Plasma jet device for insulating material surface modification - Google Patents
Plasma jet device for insulating material surface modification Download PDFInfo
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- CN115604897A CN115604897A CN202211408479.3A CN202211408479A CN115604897A CN 115604897 A CN115604897 A CN 115604897A CN 202211408479 A CN202211408479 A CN 202211408479A CN 115604897 A CN115604897 A CN 115604897A
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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Abstract
The invention relates to a plasma jet device for insulating material surface modification. The method comprises the following steps: the device comprises a plasma generating device, a plasma power supply, a gas mixing device and a three-dimensional moving platform. The gas mixing device mixes helium, argon and a reaction medium TEOS and leads the mixture into a medium pipe of the plasma generating device; the plasma power supply provides high-voltage excitation, and plasma jet is generated in the dielectric tube; the insulating material to be treated is controlled by the three-dimensional moving platform to move at a constant speed under the plasma jet flow, so that the whole surface of the material is uniformly treated. The invention overcomes the defects of the existing plasma material processing device, makes the chemical characteristics of helium and argon complementary, and improves the generation efficiency of active particles, thereby improving the processing effect of insulating materials.
Description
Technical Field
The invention belongs to the field of insulation preparation of power equipment, and relates to a plasma jet device for surface modification of an insulating material.
Background
With the continuous development of high-voltage direct-current transmission in China, the insulation performance of an insulation material in a direct-current electric field is widely concerned. The high molecular polymer material has good mechanical property and insulating property, and is often used as an insulating material for high-voltage equipment of an electric power system. For example, epoxy Resin (Epoxy Resin) is widely used in gas insulated transmission lines (GIL) and Gas Insulated Switches (GIS) by virtue of its excellent electrical properties, high temperature resistance, ease of preparation, and the like. However, the polymer material surface is easy to generate a phenomenon of charge accumulation under high voltage direct current, the voltage resistance of the polymer material surface is reduced, the probability of surface flashover is increased, and the operation safety of power system equipment is threatened. Researches show that the insulating property of the material can be effectively improved and the probability of flashover can be reduced by carrying out surface modification treatment on the polymer material. The atmospheric pressure plasma jet is applied to the surface modification of the material, has the advantages of simple and convenient operation, strong controllability, capability of treating complex surfaces, no environmental pollution and the like, and is a hotspot of current research.
Helium and argon are common working gases for atmospheric pressure plasma jets. The inert gas can be used as the working gas to obtain lower plasma excitation voltage, and is easier to control than air plasma. The plasma jet flow is used for surface modification, so that the flexibility is strong, different reaction media are introduced into the jet flow working gas, a large number of different types of active particles can be generated to react with the surface of a material, and the surface modification with different requirements is realized. E.g. by introducing appropriate amounts of H into the working gas 2 O, after the surface of the material is modified by the generated plasma jet, the hydrophilicity of the surface of the material can be improved; a reaction medium containing F, si or Ti is added into working gas, and after the surface of the material is modified by the generated plasma jet, a film can be deposited on the surface of the material, and F, si or Ti-containing groups are introduced, so that the surface charge accumulation phenomenon of the material is improved, and the insulation property is improved.
When plasma is used to surface treat a material, argon is generally used as a working gas. Compared with helium, the argon plasma has high chemical activity, larger action area when processing materials, low price and lower use cost. But at the same time, the argon plasma has the defects of poor discharge stability and uniformity, high breakdown voltage and the like. Helium is expensive, has small action area and low efficiency when used for modifying materials, but has better discharge uniformity and stability, low breakdown voltage and easier control. In summary, helium and argon have corresponding advantages and disadvantages as plasma working gases, and in order to achieve the best material surface modification effect, it is necessary to improve the current plasma jet device for insulating material surface modification.
Disclosure of Invention
The invention aims to overcome the defects of the existing plasma material processing device and provides a plasma jet device for insulating material surface modification. For this purpose, a plasma jet device for the surface modification of insulating materials is proposed.
In order to achieve the purpose, the technical scheme of the invention is as follows: a plasma-jet device for surface modification of insulating materials, comprising: the device comprises a plasma generating device, a plasma power supply, a gas mixing device and a three-dimensional moving platform; the plasma generating device is used for applying an electric field to the mixed gas, ionizing plasma and generating plasma jet containing high-concentration active particles; the plasma power supply is used for providing high-voltage excitation for the plasma generating device; the gas mixing device is used for mixing helium, argon and TEOS steam; the three-dimensional moving platform is used for fixing and moving the position of a material to be processed.
In an embodiment of the present invention, the plasma generating apparatus includes: the high-voltage electrode is arranged on the upper part of the quartz glass tube; the gas mixing device comprises three channels and a gas mixing chamber, wherein one channel of the three channels is connected with a helium gas cylinder and is provided with a mass flow meter, the other channel is connected with an argon gas cylinder and is provided with a second mass flow meter, the other channel is connected with the argon gas cylinder and is provided with a third mass flow meter, a gas washing cylinder filled with a reaction medium TEOS is introduced, and the three channels are converged and connected with the gas mixing chamber; the plasma power supply is connected with the high-voltage electrode; the three-dimensional moving platform is arranged below the quartz tube orifice.
In an embodiment of the invention, a gas washing bottle of a third channel in the gas mixing device is placed in a water bath and is uniformly heated to 60-70 ℃ so as to increase the quantity of TEOS molecules carried out by carrier gas.
In an embodiment of the present invention, the volume ratio of the mixed gas is set to 70% of argon, 29.8% of helium and 0.02% of TEOS.
In an embodiment of the invention, the plasma generating device adopts a ring-ring electrode structure, the ground electrode is wrapped at the outer end of the quartz glass tube by using a copper foil adhesive tape, and the high-voltage electrode is wrapped above the ground electrode by using a copper foil adhesive tape.
In an embodiment of the invention, in the plasma generating device, the inner diameter of a quartz glass tube is 2-4 mm; the length of the ground electrode is 20 mm, and the distance between the ground electrode and the pipe orifice is 5-10 mm; the length of the high-voltage electrode is 20 mm, and the distance between the high-voltage electrode and the ground electrode is 10 mm.
In an embodiment of the present invention, the plasma power source is a high-frequency ac power source or a pulse power source; preferably, the nanosecond pulse power supply is used to improve the uniformity and efficiency of the surface treatment of the material.
In one embodiment of the invention, the three-dimensional moving platform fixes the material to be processed, adjusts the height of the material in the Z-axis direction, places the material at the position of a jet pipe orifice of 5-10 mm, and moves horizontally in the X-axis and the Y-axis under the control of a motor, so that the processing time of each position on the surface of the material is the same, and the uniformity of a surface coating film is ensured.
In an embodiment of the invention, a plurality of plasma generating devices jointly form a one-dimensional array structure, so that the jet flow processing area is increased, and the processing efficiency is improved.
Compared with the prior art, the invention has the following beneficial effects:
the technical scheme of the invention is that helium, argon and a reaction medium TEOS are mixed to be used as a working gas to generate plasma jet, TEOS molecules react in a plasma atmosphere, si-O-Si, si-OH and other Si-containing groups are deposited on the surface of polymer materials such as epoxy resin, and the like, so as to realize surface modification. The invention combines the advantages of helium and argon through a certain mixing ratio, improves the generation efficiency of active particles in plasma jet, and deposits a film containing Si groups on the surface of a material more quickly and uniformly, thereby efficiently reducing the accumulation of surface charges of the polymer material and improving the insulating property.
Compared with the pure helium gas used as the working gas, the plasma jet mixed with argon and helium increases the surface treatment area in the vertical direction, and reduces the use cost; compared with the method using pure argon as working gas, the plasma jet mixed with argon and helium reduces the temperature of the plasma gas, enhances the uniformity and stability of discharge, and prevents excessive etching or local burning when the surface of a material is treated to damage a deposited film.
Drawings
FIG. 1 is a schematic view of the overall structure of the apparatus of the present invention;
FIG. 2 is a schematic view of the structure of the gas mixing device of the apparatus of the present invention;
FIG. 3 is a schematic diagram of a plasma generator of the apparatus of the present invention;
FIG. 4 is a schematic diagram of the structure of the plasma jet array of the apparatus of the present invention.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
As shown in fig. 1 to 3, the present invention provides a plasma jet device for surface modification of an insulating material, comprising the following 4 parts: a gas mixing device 1 for mixing helium, argon and a reaction medium TEOS; a plasma generating device 2 for generating a plasma jet; a plasma power supply 3 for providing high voltage excitation; a three-dimensional moving platform 4 for fixing and moving the processing material.
The gas mixing device 1 comprises three channels and a gas mixing chamber: one path is connected with a helium gas bottle 21 and provided with a mass flow meter 23, the other path is connected with an argon gas bottle 22 and provided with a mass flow meter 24, the other path is connected with the argon gas bottle 22 and provided with a mass flow meter 25, a gas washing bottle 26 filled with reaction medium TEOS is introduced, and the paths are converged and connected with a gas mixing chamber 27; the plasma generating apparatus includes: a gas inlet 31, a quartz glass tube 32, a high voltage electrode 33, and a ground electrode 34; the plasma power supply 3 is connected with a high-voltage electrode 33; the three-dimensional moving platform 4 is arranged below the opening 32 of the quartz glass tube by 5-10 mm.
And (3) placing the gas washing bottle 26 of the third channel in the gas mixing device 1 in a water bath kettle, and uniformly heating to 60-70 ℃ to increase the quantity of TEOS molecules carried out by carrier gas.
The volume ratio of the mixed gas is 70% of argon, 29.8% of helium and 0.02% of TEOS.
The plasma generating device 2 adopts a ring-ring electrode structure, the ground electrode 34 is wrapped at the tail end of the outer side of the quartz tube by a copper foil adhesive tape, and the high-voltage electrode 33 is wrapped above the ground electrode 34 by the copper foil adhesive tape.
In the plasma generating device 2, the inner diameter of the quartz glass tube 32 is 2 to 4mm; the length of the ground electrode 34 is 20 mm, and the distance between the ground electrode and the pipe orifice is 5-10 mm; the high voltage electrode 34 is 20 mm long and 10 mm distant from the ground electrode.
The plasma power supply 3 is a high-frequency alternating current power supply or a pulse power supply. Preferably, the nanosecond pulse power supply can be used to improve the uniformity and efficiency of the surface treatment of the material.
And fixing the material to be processed by the three-dimensional moving platform 4, adjusting the height of the material in the Z-axis direction, placing the material at the position of a jet flow nozzle with the diameter of 5-10 mm, and horizontally moving the material along the X axis and the Y axis under the control of a motor, so that the processing time of each position on the surface of the material is the same, and the uniformity of the surface coating is ensured.
The following are specific examples of the present invention:
in the first embodiment, the overall structure of the apparatus is shown in fig. 1, and the following description will be made with reference to fig. 2 and 3. Pressurizing a helium gas bottle 21, introducing helium gas into a gas pipe, and controlling the introduced helium gas to account for 29.8 percent of the total volume by using a mass flow meter 23; pressurizing an argon gas cylinder 22, introducing argon gas into a gas pipe, dividing the gas pipe into two paths, introducing one path of the gas pipe into a mass flow meter 24, controlling the mass flow of the gas pipe to be larger, and directly introducing the gas pipe into a gas mixing chamber 27 as a diluent gas; one path is introduced into a mass flow meter 25, the flow rate is controlled to be small, the mass flow meter is used as carrier gas and introduced into a gas washing bottle 26 which is heated in water bath at 60 ℃ and is filled with TEOS, and the two paths are combined to generate TEOS steam accounting for 0.2 percent of the total volume fraction and argon accounting for 70 percent of the total volume fraction. The three gases are fully mixed in the gas mixing chamber 27, and the generated uniform mixed gas is introduced into the quartz glass tube 32 through the gas inlet 31. And placing the epoxy resin sheet 5 made of the polymer material to be processed on the three-dimensional moving platform 4, controlling the vertical lifting of the three-dimensional moving platform 4, and placing the epoxy resin sheet 4 at a distance of 5-10 cm from the orifice of the quartz glass tube 32. The plasma power supply 3 applies a voltage to the high voltage electrode 33, and ionizes plasma between the high voltage electrode 33 and the ground electrode 34 and carries the plasma out by the air flow, thereby generating a plasma jet 35 and performing surface treatment on the epoxy resin sheet 5. The movement of the three-dimensional moving platform 4 in the horizontal X-axis and Y-axis directions is controlled by the motor, so that the epoxy resin sheet 5 moves in a snake-like shape back and forth under the plasma jet flow 35, the processing time of each position on the surface of the epoxy resin sheet 5 is the same, and uniform film deposition is realized.
In the second embodiment, the plasma generating devices 2 form a one-dimensional array structure, as shown in fig. 4. In order to enhance the surface treatment efficiency and ensure the treatment uniformity, the plasma generating devices 2 with the same ring-ring electrode structure are vertically fixed on a straight line, and then the three-dimensional moving platform 4 is matched to control the epoxy resin sheet 5 to move in a snake-shaped way under the jet flow array, so that the epoxy resin sheet 5 is more efficiently and uniformly treated.
In the first and second embodiments, the same effect can be achieved by replacing the plasma generation device 2 with other jet pipe structures such as a needle-ring electrode structure; the epoxy resin sheet 5 is replaced by other polymer materials, corresponding plasma surface modification can be carried out, si-containing groups are introduced to the surface of the epoxy resin sheet, and the insulating property is improved. The three-dimensional moving platform in the embodiment is suitable for processing materials with regular planes, such as the epoxy resin sheets 5, and for materials with irregular shapes, the corresponding processing platform needs to be designed to realize uniform processing.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (9)
1. A plasma-jet apparatus for surface modification of insulating materials, comprising: the device comprises a plasma generating device, a plasma power supply, a gas mixing device and a three-dimensional moving platform; the plasma generating device is used for applying an electric field to the mixed gas, ionizing plasma and generating plasma jet containing high-concentration active particles; the plasma power supply is used for providing high-voltage excitation for the plasma generating device; the gas mixing device is used for mixing helium, argon and TEOS steam; the three-dimensional moving platform is used for fixing and moving the position of a material to be processed.
2. The plasma jet apparatus for surface modification of insulating materials as claimed in claim 1, wherein the plasma generating means comprises: the high-voltage electrode is arranged on the upper part of the quartz glass tube; the gas mixing device comprises three channels and a gas mixing chamber, wherein one channel of the three channels is connected with a helium gas cylinder and provided with a mass flow meter, the other channel of the three channels is connected with an argon gas cylinder and provided with a second mass flow meter, the other channel of the three channels is connected with the argon gas cylinder and provided with a third mass flow meter, a gas washing cylinder filled with a reaction medium TEOS is introduced, and the three channels are converged and connected with the gas mixing chamber; the plasma power supply is connected with the high-voltage electrode; the three-dimensional moving platform is arranged below the quartz pipe orifice.
3. The plasma jet device for insulating material surface modification as claimed in claim 2, wherein a gas washing bottle of a third channel in the gas mixing device is placed in a water bath and heated uniformly to 60 to 70 ℃ to increase the amount of TEOS molecules carried out by a carrier gas.
4. A plasma jet device for insulating material surface modification according to claim 2, characterized in that the volume ratio of the mixed gas is set to argon 70%, helium 29.8%, TEOS0.02%.
5. The plasma jet device for surface modification of insulating materials as claimed in claim 2, wherein the plasma generating device is of a ring-ring electrode structure, the ground electrode is wrapped on the outer end of the quartz glass tube by using copper foil tape, and the high-voltage electrode is wrapped on the ground electrode by using copper foil tape.
6. The plasma jet device for insulating material surface modification according to claim 2 or 5, wherein the inside diameter of the quartz glass tube in the plasma generating device is 2 to 4mm; the length of the ground electrode is 20 mm, and the distance between the ground electrode and the pipe orifice is 5-10 mm; the length of the high-voltage electrode is 20 mm, and the distance between the high-voltage electrode and the ground electrode is 10 mm.
7. The plasma jet device for insulating material surface modification according to claim 2, characterized in that the plasma power supply is a high frequency alternating current power supply or a pulse power supply; preferably, the nanosecond pulse power supply is used to improve the uniformity and efficiency of the surface treatment of the material.
8. The plasma jet device for insulating material surface modification according to claim 2, wherein the three-dimensional moving platform fixes a material to be processed, adjusts the height in the Z-axis direction, places the material at a position of 5-10 mm from a jet nozzle, and moves horizontally in the X-axis and the Y-axis under the control of a motor, so that the processing time of the material surface is the same everywhere, and the uniformity of a surface coating film is ensured.
9. The plasma jet device for insulating material surface modification according to claim 1, wherein a plurality of plasma generating devices jointly form a one-dimensional array structure, so that the jet flow treatment area is increased, and the treatment efficiency is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211408479.3A CN115604897A (en) | 2022-11-10 | 2022-11-10 | Plasma jet device for insulating material surface modification |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211408479.3A CN115604897A (en) | 2022-11-10 | 2022-11-10 | Plasma jet device for insulating material surface modification |
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| CN115604897A true CN115604897A (en) | 2023-01-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117736626A (en) * | 2023-12-19 | 2024-03-22 | 扬州市鑫源电气股份有限公司 | Metal-enclosed insulated wire and production process thereof |
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2022
- 2022-11-10 CN CN202211408479.3A patent/CN115604897A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117736626A (en) * | 2023-12-19 | 2024-03-22 | 扬州市鑫源电气股份有限公司 | Metal-enclosed insulated wire and production process thereof |
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