CN115602742A - 长波iii-v族红外探测器及其制备方法 - Google Patents
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Abstract
本发明公开了一种长波III‑V族红外探测器，所述红外探测器结构包括衬底、缓冲层、吸收层和帽层；其中，所述吸收层的材料为非故意掺杂的BInAsSbBi，所述非故意掺杂的BInAsSbBi的组分结构满足：BxIn1‑xAs1‑y‑zSbyBiz，其中，x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06。本发明提供的长波III‑V族红外探测器及其制备方法通过在衬底上以满足适当组分要求的BInAsSbBi材料作为吸收层制备长波III‑V族红外探测器，获得了较好的化学稳定性，保证了耐热性的同时，具有较高的吸收系数，能够保持与衬底较小的晶格失配，从而提升了探测器性能。
Description
技术领域
本发明属于半导体技术领域，特别涉及一种长波III-V族红外探测器及其制备方法。
背景技术
所有物体都会发射与其温度和表面特性相关的热辐射，室温物体的热辐射集中在长波红外(8-14微米)波段，长波红外的光电探测器具有重要的应用需求和应用价值。常见的长波III-V族红外探测器分为热敏型和光子型。热敏型长波III-V族红外探测器可常温工作，对波长不敏感，虽然可满足一些对性能要求不高的常规应用，但其探测灵敏度和成像分辨率不高，响应速度也较慢，难以满足对探测性能要求较高的应用场景。
光子型长波III-V族红外探测器利用光电转换原理对红外光进行探测，具有较高的探测灵敏度，也具有较高的响应速度，能够满足高性能探测的要求。探测器应用时一般需要制冷。用于制备光子型长波III-V族红外探测器的材料主要有II-VI族碲镉汞，通过调节材料组分可以与碲锌镉衬底晶格匹配，是目前长波III-V族红外探测器的主流。但是其键能较弱，材料生长温度较低，化学稳定性不足，后续器件工艺和使用时也不能承受高温。
发明内容
本发明要解决的技术问题是为了克服现有技术中II-VI族碲镉汞作为制备光子型长波III-V族红外探测器的材料键能较弱，材料生长温度较低，化学稳定性不足，后续器件工艺和使用时无法承受高温；以及III-V族材料的InAs/GaSb II类超晶格的长波III-V族红外探测器因为吸收系数较小导致量子效率较低的缺陷，提供一种长波III-V族红外探测器及其制备方法。
本发明是通过下述技术方案来解决上述技术问题：
本发明提供了一种长波III-V族红外探测器，所述红外探测器结构包括衬底、缓冲层、吸收层和帽层；其中，所述吸收层的材料为非故意掺杂的BInAsSbBi，所述非故意掺杂的BInAsSbBi的组分结构满足：
BxIn1-xAs1-y-zSbyBiz，其中，x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06。
较佳地，所述衬底、所述缓冲层、所述帽层的材料均为GaSb。
较佳地，所述衬底、所述缓冲层、所述帽层均为InAs材料。
较佳地，所述缓冲层采用P型掺杂，所述帽层采用N型高掺杂。
较佳地，所述缓冲层采用N型掺杂，所述帽层采用P型高掺杂。
较佳地，所述缓冲层掺杂的载流子浓度高于1×1018cm-3；
所述帽层掺杂的载流子浓度高于1×1018cm-3。
较佳地，所述缓冲层的厚度为0.5μm-1μm。
较佳地，所述帽层的厚度为0.2μm-0.6μm。
较佳地，所述吸收层的厚度为1μm-3μm。
本发明还提供了一种长波III-V族红外探测器的制备方法，其特征在于，包括步骤：
在衬底上生长缓冲层，所述缓冲层和所述衬底材料相同；
在所述缓冲层上生长吸收层；所述吸收层的材料为非故意掺杂的BInAsSbBi，所述吸收层的组分结构满足BxIn1-xAs1-y-zSbyBiz，其中x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06；
在所述吸收层上生长帽层；所述帽层和所述衬底的材料相同；所述帽层和所述缓冲层的掺杂类型相反；
基于所述完成材料生长的衬底制备所述长波III-V族红外探测器。
本发明的积极进步效果在于：本发明提供的长波III-V族红外探测器及其制备方法通过在衬底上以满足适当组分要求的BInAsSbBi材料作为吸收层制备长波III-V族红外探测器，获得了较好的化学稳定性，保证了耐热性的同时，具有较高的吸收系数，能够保持与衬底较小的晶格失配，从而提升了探测器性能。
附图说明
图1为本发明的实施例的长波III-V族红外探测器的结构示意图。
图2为本发明的实施例的长波III-V族红外探测器的制备方法的流程图。
具体实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。
参见图1所示，本发明提供了一种长波III-V族红外探测器100，包括衬底101、缓冲层102、吸收层103和帽层104；其中，吸收层103的材料为非故意掺杂的BInAsSbBi，组分结构满足：BxIn1-xAs1-y-zSbyBiz；
其中，x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06。
III-V族材料具有较好的化学稳定性，而经多次测试获得的该组份材料的吸收层103具有较高的吸收系数，可保持与衬底较小的晶格失配，实现获得较高的材料质量和探测效果。
作为较佳的实施方式，衬底101、缓冲层102、帽层104的材料均为GaSb。
作为较佳的实施方式，衬底101、缓冲层102、帽层104均为InAs材料。
作为较佳的实施方式，所述缓冲层采用P型掺杂，所述帽层采用N型高掺杂。
作为较佳的实施方式，所述缓冲层采用N型掺杂，所述帽层采用P型高掺杂。
作为较佳的实施方式，缓冲层102掺杂的载流子浓度高于1×1018cm-3；帽层104掺杂的载流子浓度高于1×1018cm-3。
作为较佳的实施方式，缓冲层102的厚度为0.5μm-1μm。
作为较佳的实施方式，帽层104的厚度为0.2μm-0.6μm。
作为较佳的实施方式，吸收层103的厚度为1μm-3μm。
参见图2所示，通过下述制备方法制备长波III-V族红外探测器100，包括步骤：
S1.在衬底上生长缓冲层，缓冲层和衬底材料相同；
S2.在缓冲层上生长吸收层；吸收层的材料为非故意掺杂的BInAsSbBi，吸收层的组分结构满足BxIn1-xAs1-y-zSbyBiz，其中x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06；
S3.在吸收层上生长帽层；帽层和衬底的材料相同；帽层和缓冲层的掺杂类型相反；
S4.基于完成材料生长的衬底制备长波III-V族红外探测器。
作为较佳的实施方式，本实施例提供了一种长波III-V族红外探测器200；衬底201为GaSb材料；缓冲层202和帽层204均为GaSb材料；吸收层203为B0.1In0.9As0.37Sb0.6Bi0.03材料。
较佳地，通过下述制备方法制备长波III-V族红外探测器200，包括步骤：
S1’.采用分子束外延在GaSb材料的衬底201之上生长GaSb材料的缓冲层202，缓冲层202的厚度0.5μm，缓冲层202采用P型高掺杂，缓冲层202掺杂的载流子浓度为2×1018cm-3。
S2’.生长非故意掺杂的B0.1In0.9As0.37Sb0.6Bi0.03材料的吸收层203，吸收层203的厚度为1.5μm；
S3’.生长GaSb材料的帽层204，帽层204的厚度0.3μm，帽层204采用N型高掺杂，帽层204掺杂载流子浓度为2×1018cm-3；
S4’.对于完成生长的GaSb基B0.1In0.9As0.37Sb0.6Bi0.03的材料，采用光刻、刻蚀、沉积等器件工艺方法制备长波III-V族红外探测器器件200。
上述器件工艺方法为本领域技术人员所知晓，故不再赘述。
作为较佳的实施方式，本实施例还提供了一种长波III-V族红外探测器300，其衬底301为GaSb材料；缓冲层302和帽层304均为GaSb材料；吸收层303为B0.12In0.88As0.3Sb0.65Bi0.05材料。
较佳地，通过下述制备方法制备长波III-V族红外探测器300，包括步骤：
S1”.采用分子束外延在InAs材料的衬底301之上生长InAs材料的缓冲层302，缓冲层302的厚度1μm，缓冲层302采用N型高掺杂，缓冲层302掺杂的载流子浓度为1×1018cm-3。
S2”.生长非故意掺杂的B0.12In0.88As0.3Sb0.65Bi0.05材料的吸收层303，吸收层303的厚度为2.5μm；
S3”.生长InAs材料的帽层304，帽层304的厚度0.5μm，帽层304采用P型高掺杂，帽层304掺杂载流子浓度为3×1018cm-3；
S4”.对于完成生长的InAs基B0.12In0.88As0.3Sb0.65Bi0.05材料，采用光刻、刻蚀、沉积等器件工艺方法制备长波III-V族红外探测器器件300。
本实施例中提供的长波III-V族红外探测器及其制备方法通过在衬底上以满足适当组分要求的BInAsSbBi材料作为吸收层制备长波III-V族红外探测器，获得了较好的化学稳定性，保证了耐热性的同时，具有较高的吸收系数，能够保持与衬底较小的晶格失配，从而提升了探测器性能。
虽然以上描述了本发明的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本发明的保护范围。
Claims (10)
1.一种长波III-V族红外探测器，其特征在于，所述红外探测器结构包括衬底、缓冲层、吸收层和帽层；其中，所述吸收层的材料为非故意掺杂的BInAsSbBi，所述非故意掺杂的BInAsSbBi的组分结构满足：
BxIn1-xAs1-y-zSbyBiz，其中，x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06。
2.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述衬底、所述缓冲层、所述帽层的材料均为GaSb。
3.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述衬底、所述缓冲层、所述帽层均为InAs材料。
4.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述缓冲层采用P型掺杂，所述帽层采用N型高掺杂。
5.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述缓冲层采用N型掺杂，所述帽层采用P型高掺杂。
6.如权利要求1所述的长波III-V族红外探测器，其特征在于，
所述缓冲层掺杂的载流子浓度高于1×1018cm-3；
所述帽层掺杂的载流子浓度高于1×1018cm-3。
7.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述缓冲层的厚度为0.5μm-1μm。
8.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述帽层的厚度为0.2μm-0.6μm。
9.如权利要求1所述的长波III-V族红外探测器，其特征在于，所述吸收层的厚度为1μm-3μm。
10.一种长波III-V族红外探测器的制备方法，其特征在于，包括步骤：
在衬底上生长缓冲层，所述缓冲层和所述衬底的材料相同；
在所述缓冲层上生长吸收层；所述吸收层的材料为非故意掺杂的BInAsSbBi，所述吸收层的组分结构满足BxIn1-xAs1-y-zSbyBiz，其中x≥0.1，0.4≤y≤0.7，0.01≤z≤0.06；
在所述吸收层上生长帽层；所述帽层和所述衬底的材料相同；所述帽层和所述缓冲层的掺杂类型相反；
基于所述完成材料生长的衬底制备所述长波III-V族红外探测器。
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